CN109950136A - A method of the cleaning improving nitrogen-doped carbon compound heap poststack generates washmarking - Google Patents
A method of the cleaning improving nitrogen-doped carbon compound heap poststack generates washmarking Download PDFInfo
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- CN109950136A CN109950136A CN201910231200.0A CN201910231200A CN109950136A CN 109950136 A CN109950136 A CN 109950136A CN 201910231200 A CN201910231200 A CN 201910231200A CN 109950136 A CN109950136 A CN 109950136A
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Abstract
The present invention provides a kind of method that the cleaning for improving nitrogen-doped carbon compound heap poststack generates washmarking, it include: to provide using the second nitrogen-doped carbon compound layer as the semiconductor structure of upper surface layer, the surface of the second nitrogen-doped carbon compound has hydrophobic silico-carbo-hydrogen-nitrogen compound；It is rinsed with surface of the water to the second nitrogen-doped carbon compound, to remove surface contaminants；Surface is rinsed with isopropyl acetone, merges isopropyl acetone with the water phase of surface residual；Surface is blowed and sprayed using nitrogen, the water for having been dissolved in isopropyl acetone is taken away into surface.The present invention increases the flushing of isopropyl acetone after spraying-rinsing step, since isopropanol has splendid intersolubility that can merge completely with water with water, and since isopropanol has good volatility, can be aided with that nitrogen blows and sprays can be readily by the moisture content for having been dissolved in isopropanol since characteristic of its volatilization takes away surface carbide (NDC) of N doping, and then the protuberance problem that subsequent covering film is amplified caused by residual washmarking is avoided, to improve product yield.
Description
Technical field
The present invention relates to a kind of semiconductor making methods, improve the clear of nitrogen-doped carbon compound heap poststack more particularly to a kind of
The clean method for generating washmarking.
Background technique
In the last copper conductor processing procedure of semiconductor wafer, due to tetramethylsilane (4MS, Tetramethylsilane)
The carbide that will form N doping is reacted with amine (NH3), and in this, as the protective layer of subsequent etching (sacrificial layer) and can be prevented
Aqueous vapor and oxygen touch copper and oxidized, but the surface after reacting because containing unreacted completely due to generate silico-carbo-hydrogen-nitrogen change
Object is closed, this meeting is understood and be made because of hydrophobic characteristic so that surface becomes hydrophobic property, and after the step of subsequent water spray cleans
At (wafer mark) the phenomenon that washmarking, washmarking subsequent stack layer is stacked on go after will generate protuberance (bump), and it is tight
The bulge of weight just easilys lead to structural damage (pattern fail) in the processing procedure of chemical mechanical grinding.
To solve the above-mentioned problems, need to propose that a kind of cleaning of new improvement nitrogen-doped carbon compound heap poststack generates washmarking
Method.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of improvement nitrogen-doped carbon compound heaps
The method that the cleaning of poststack generates washmarking, for solving in the prior art since the N doping carbide surface on metal layer contains
Silico-carbo-hydrogen-the nitrogen compound generated is not reacted completely, so that surface has hydrophobicity and causes after being subsequently formed stack layer
Protuberance can be generated, so as to cause destructurized problem.
In order to achieve the above objects and other related objects, the present invention provide it is a kind of improve nitrogen-doped carbon compound heap poststack it is clear
The clean method for generating washmarking, at least includes the following steps: Step 1: providing using the second nitrogen-doped carbon compound layer as upper surface layer
Semiconductor structure, the surface of the second nitrogen-doped carbon compound has hydrophobic silico-carbo-hydrogen-nitrogen compound；Step 2:
It is rinsed with surface of the water to the second nitrogen-doped carbon compound, to remove the surface contaminants；Step 3: being rushed with isopropyl acetone
The surface is washed, isopropyl acetone and the water phase of the surface residual are merged；Step 4: the surface is blowed and sprayed using nitrogen, it will
The water for having been dissolved in isopropyl acetone takes away the surface.
Preferably, the semiconductor structure in the step 1 further include: metal layer, the first nitrogen on the metal layer are mixed
Miscellaneous carbide lamella, the TEOS layer in the first nitrogen-doped carbon compound layer, the low dielectric layer on the TEOS layer with
And the second nitrogen-doped carbon compound layer described in the step one on the low dielectric layer.
Preferably, the method for the semiconductor structure is formed the following steps are included: (1) forms the metal layer；(2) in institute
It states and forms the first nitrogen-doped carbon compound layer on metal layer；(3) described in being formed in the first nitrogen-doped carbon compound layer
TEOS layers；(4) deposition forms low dielectric layer on the TEOS layer；(5) second nitrogen is formed on the low dielectric layer to mix
Miscellaneous carbide lamella.
Preferably, the method for forming the low dielectric layer is chemical vapour deposition technique.
Preferably, the material of the low dielectric layer is BDII.
Preferably, the method for the first, second nitrogen-doped carbon compound layer is formed are as follows: tetramethylsilane and ammonia are provided, made
It obtains the two reaction completely and forms the first, second nitrogen-doped carbon compound layer.
Preferably, silico-carbo described in step 1-hydrogen-nitrogen compound forming method are as follows: tetramethylsilane and ammonia are provided,
So that the two occurs incomplete reaction and forms the silico-carbo-hydrogen-nitrogen compound.
Preferably, the first nitrogen-doped carbon compound layer with a thickness of 250 angstroms.
Preferably, described TEOS layers with a thickness of 150 angstroms.
Preferably, the low dielectric layer with a thickness of 1570 angstroms.
Preferably, the second nitrogen-doped carbon compound layer with a thickness of 100 angstroms.
Preferably, finally it is decomposed to form silicon dioxide layer for described TEOS layers.
As described above, the method that the cleaning of improvement nitrogen-doped carbon compound heap poststack of the invention generates washmarking, has following
The utility model has the advantages that increasing the flushing of isopropyl acetone after spraying-rinsing step, since isopropanol and water have splendid intersolubility can be with water
Fusion completely, and since isopropanol has good volatility, can be aided with nitrogen and blow and spray will can readily have been dissolved in isopropanol
Moisture content surface carbide (NDC) of N doping is taken away by characteristic of its volatilization, and then avoid subsequent covering caused by residual washmarking
The protuberance problem that lid film is amplified., to improve product yield.
Detailed description of the invention
The cleaning that Fig. 1 is shown as improvement nitrogen-doped carbon compound heap poststack of the invention generates semiconductor junction in the method for washmarking
Structure schematic diagram；
The cleaning that Fig. 2 is shown as improvement nitrogen-doped carbon compound heap poststack of the invention generates the method flow diagram of washmarking.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Fig. 1 is please referred to Fig. 2.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in schema then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
The method stream of washmarking is generated with reference to Fig. 2, Fig. 2 cleaning for being shown as improvement nitrogen-doped carbon compound heap poststack of the invention
Cheng Tu.
The present invention provides a kind of method that the cleaning for improving nitrogen-doped carbon compound heap poststack generates washmarking, specifically includes following
Step:
Step 1: providing using the second nitrogen-doped carbon compound layer as the semiconductor structure of upper surface layer, the nitrogen-doped carbon
The surface of compound has hydrophobic silico-carbo-hydrogen-nitrogen compound；Improvement nitrogen-doped carbon of the invention is shown as with reference to Fig. 1, Fig. 1
The cleaning of compound heap poststack generates semiconductor structure schematic diagram in the method for washmarking.As shown in Figure 1, wherein second N doping
Carbide lamella (NDC) is the top layer of the semiconductor structure.With reference to Fig. 1, further, the semiconductor structure also wraps the present embodiment
Include: metal layer (Mx-1), is located at first nitrogen at the first nitrogen-doped carbon compound layer (NDC) being located on the metal layer (Mx-1)
It adulterates the TEOS layer on carbide lamella (NDC), the low dielectric layer (BDII) on the TEOS layer and is located at low Jie
Second nitrogen-doped carbon compound layer (NDC) described in step one in electric layer (BDII).
The first nitrogen-doped carbon compound layer (NDC) is to be generated by tetramethylsilane and ammonia reaction, second N doping
Carbide lamella (NDC) also to be generated by being reacted by tetramethylsilane and ammonia is occurred completely by tetramethylsilane and ammonia
It reacts and generates.
The forming method of the embodiment of the present invention semiconductor structure the following steps are included:
(1) metal layer (Mx-1) is formed, the formation of the metal layer (Mx-1) includes photoetching, etching and filling gold
Belong to material and be made, the material of metal layer described in the present embodiment is copper；
(2) the first nitrogen-doped carbon compound layer (NDC) is formed on the metal layer (Mx-1), the present embodiment is preferred
Ground, the method for forming the first nitrogen-doped carbon compound layer (NDC) is to provide tetramethylsilane and ammonia, so that the two is reacted completely
Form the first nitrogen-doped carbon compound layer (NDC)；
(3) formed on the first nitrogen-doped carbon compound layer (NDC) it is TEOS layers described, wherein described TEOS layers be dielectric
Matter layer, is finally decomposed to form silicon dioxide layer；
(4) deposition forms low dielectric layer on the TEOS layer, and the forming method of the low dielectric layer in the step is excellent
It is selected as being formed using chemical vapour deposition technique, the material of the low dielectric layer in the present embodiment is BDII.The BDII is low K
It is worth the dielectric material of (dielectric constant)；
(5) the second nitrogen-doped carbon compound layer (NDC) is formed on the low dielectric layer, is carbonized with first N doping
Nitride layer (NDC) equally, forms the method for the second nitrogen-doped carbon compound layer (NDC) to provide tetramethylsilane and ammonia, so that
The two is reacted completely forms the first nitrogen-doped carbon compound layer (NDC).
The present embodiment preferably, the first nitrogen-doped carbon compound layer (NDC) with a thickness of 250 angstroms.Preferably simultaneously, institute
State TEOS layers with a thickness of 150 angstroms.
The surface of azepine carbide described in step 1 has silico-carbo-hydrogen-nitrogen compound, the silico-carbo-hydrogen-nitrogen compound
Formation be that incomplete reaction occurs by tetramethylsilane and ammonia to form the silico-carbo-hydrogen-nitrogen compound.And institute in step 1
The surface for stating azepine carbide has hydrophobic silico-carbo-hydrogen-nitrogen compound, so that the surface of the azepine carbide has
Hydrophobicity, so that surface can be made washmarking occur because of hydrophobic characteristic after later use water is to surface water spray cleaning
Phenomenon, and subsequent process requirement forms stepped construction on the hydrophobic surface, washmarking will lead to appearance protuberance phenomenon, serious
Bulge easilys lead to structural damage in CMP step.Therefore, it is necessary to carry out following steps of the invention
To improve the above problem.
Step 2: it is rinsed (scrubber clean) with surface of the water to the second nitrogen-doped carbon compound (NDC),
To remove the surface contaminants.
Step 3: rinsing the surface with isopropyl acetone, merge isopropyl acetone and the water phase of the surface residual；Isopropanol
(iso-Propyl alcohol, (CH3) 2CHOH)) can effectively reduce surface tension combine " volatility " and " dissolution
Degree " is a solvent miscible with water.Since isopropanol has splendid intersolubility that can merge completely with water with water, so that hydrophobicity
The moisture on surface dissolve each other with isopropyl acetone.
Step 4: blowing and spraying using nitrogen to the surface, the water for having been dissolved in isopropyl acetone is taken away into the surface.In the step
It is aided with nitrogen and blows and sprays the moisture content that can easily remove the surface NDC, further improves subsequent protuberance (bump) problem.
The present invention also provides another embodiments: referring to Fig. 2, the improvement nitrogen-doped carbon compound that Fig. 2 is shown as of the invention stacks
Cleaning afterwards generates the method flow diagram of washmarking.The present invention provides a kind of cleaning generation water for improving nitrogen-doped carbon compound heap poststack
The method of trace, specifically includes the following steps:
Step 1: providing using the second nitrogen-doped carbon compound layer as the semiconductor structure of upper surface layer, the nitrogen-doped carbon
The surface of compound has hydrophobic silico-carbo-hydrogen-nitrogen compound；Improvement nitrogen-doped carbon of the invention is shown as with reference to Fig. 1, Fig. 1
The cleaning of compound heap poststack generates semiconductor structure schematic diagram in the method for washmarking.As shown in Figure 1, wherein second N doping
Carbide lamella (NDC) is the top layer of the semiconductor structure.With reference to Fig. 1, further, the semiconductor structure also wraps the present embodiment
Include: metal layer (Mx-1), is located at first nitrogen at the first nitrogen-doped carbon compound layer (NDC) being located on the metal layer (Mx-1)
It adulterates the TEOS layer on carbide lamella (NDC), the low dielectric layer (BDII) on the TEOS layer and is located at low Jie
Second nitrogen-doped carbon compound layer (NDC) described in step one in electric layer (BDII).The first nitrogen-doped carbon compound layer (NDC)
To be generated by tetramethylsilane and ammonia reaction, the second nitrogen-doped carbon compound layer (NDC) is also for by by tetramethylsilane and ammonia
Reaction generates, and is all that reaction completely is occurred by tetramethylsilane and ammonia and is generated.
The forming method of the embodiment of the present invention semiconductor structure the following steps are included:
(1) metal layer (Mx-1) is formed, the formation of the metal layer (Mx-1) includes photoetching, etching and filling gold
Belong to material and be made, the material of metal layer described in the present embodiment is copper；
(2) the first nitrogen-doped carbon compound layer (NDC) is formed on the metal layer (Mx-1), the present embodiment is preferred
Ground, the method for forming the first nitrogen-doped carbon compound layer (NDC) is to provide tetramethylsilane and ammonia, so that the two is reacted completely
Form the first nitrogen-doped carbon compound layer (NDC)；
(3) formed on the first nitrogen-doped carbon compound layer (NDC) it is TEOS layers described, wherein described TEOS layers be dielectric
Matter layer, is finally decomposed to form silicon dioxide layer；
(4) deposition forms low dielectric layer on the TEOS layer, and the forming method of the low dielectric layer in the step is excellent
It is selected as being formed using chemical vapour deposition technique, the material of the low dielectric layer in the present embodiment is BDII.The BDII is low K
It is worth the dielectric material of (dielectric constant)；
(5) the second nitrogen-doped carbon compound layer (NDC) is formed on the low dielectric layer, is carbonized with first N doping
Nitride layer (NDC) equally, forms the method for the second nitrogen-doped carbon compound layer (NDC) to provide tetramethylsilane and ammonia, so that
The two is reacted completely forms the first nitrogen-doped carbon compound layer (NDC).
The present embodiment preferably, the first nitrogen-doped carbon compound layer (NDC) with a thickness of 250 angstroms.Preferably simultaneously, institute
State TEOS layers with a thickness of 150 angstroms.Further, low dielectric layer described in the present embodiment with a thickness of 1570 angstroms, described
Two nitrogen-doped carbon compound layers with a thickness of 100 angstroms.
The surface of azepine carbide described in step 1 has silico-carbo-hydrogen-nitrogen compound, the silico-carbo-hydrogen-nitrogen compound
Formation be that incomplete reaction occurs by tetramethylsilane and ammonia to form the silico-carbo-hydrogen-nitrogen compound.And institute in step 1
The surface for stating azepine carbide has hydrophobic silico-carbo-hydrogen-nitrogen compound, so that the surface of the azepine carbide has
Hydrophobicity, so that surface can be made washmarking occur because of hydrophobic characteristic after later use water is to surface water spray cleaning
Phenomenon, and subsequent process requirement forms stepped construction on the hydrophobic surface, washmarking will lead to appearance protuberance phenomenon, serious
Bulge easilys lead to structural damage in CMP step.Therefore, it is necessary to carry out following steps of the invention
To improve the above problem.
Step 2: being rinsed (scrubber using surface of the water to the second nitrogen-doped carbon compound (NDC)
Clean), to remove the surface contaminants.
Step 3: rinsing the surface with isopropyl acetone, merge isopropyl acetone and the water phase of the surface residual；Isopropanol
(iso-Propyl alcohol, (CH3) 2CHOH)) can effectively reduce surface tension combine " volatility " and " dissolution
Degree " is a solvent miscible with water.Since isopropanol has splendid intersolubility that can merge completely with water with water, so that hydrophobicity
The moisture on surface dissolve each other with isopropyl acetone.
Step 4: blowing and spraying using nitrogen to the surface, the water for having been dissolved in isopropyl acetone is taken away into the surface.In the step
It is aided with nitrogen and blows and sprays the moisture content that can easily remove the surface NDC, further improves subsequent protuberance (bump) problem.To sum up institute
It states, the method that the cleaning of improvement nitrogen-doped carbon compound heap poststack of the invention generates washmarking increases different after spraying-rinsing step
The flushing of acetone, since isopropanol has splendid intersolubility that can merge completely with water with water, and since isopropanol has well
Volatility can be aided with nitrogen and blow and spray and the moisture content for having been dissolved in isopropanol readily can be taken away N doping by the characteristic of its volatilization
The surface carbide (NDC), and then avoid the protuberance problem that subsequent covering film is amplified caused by residual washmarking.To improve production
Product yield.So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (12)
1. a kind of method that the cleaning for improving nitrogen-doped carbon compound heap poststack generates washmarking, which is characterized in that include at least following
Step:
Step 1: providing using the second nitrogen-doped carbon compound layer as the semiconductor structure of upper surface layer, second nitrogen-doped carbon
The surface of compound has hydrophobic silico-carbo-hydrogen-nitrogen compound；
Step 2: being rinsed with surface of the water to the second nitrogen-doped carbon compound, to remove the surface contaminants；
Step 3: rinsing the surface with isopropyl acetone, merge isopropyl acetone and the water phase of the surface residual；
Step 4: blowing and spraying using nitrogen to the surface, the water for having been dissolved in isopropyl acetone is taken away into the surface.
2. the method that the cleaning according to claim 1 for improving nitrogen-doped carbon compound heap poststack generates washmarking, feature exist
In the semiconductor structure in the step 1 further include: metal layer, the first nitrogen-doped carbon compound layer on the metal layer,
TEOS layer in the first nitrogen-doped carbon compound layer, the low dielectric layer on the TEOS layer and be located at it is described low
Second nitrogen-doped carbon compound layer described in step one on dielectric layer.
3. the method that the cleaning according to claim 2 for improving nitrogen-doped carbon compound heap poststack generates washmarking, feature exist
In: the method for the semiconductor structure is formed the following steps are included: (1) forms the metal layer；(2) shape on the metal layer
At the first nitrogen-doped carbon compound layer；(3) it is formed in the first nitrogen-doped carbon compound layer TEOS layers described；(4) in institute
It states deposition on TEOS layer and forms low dielectric layer；(5) the second nitrogen-doped carbon compound layer is formed on the low dielectric layer.
4. the method that the cleaning according to claim 3 for improving nitrogen-doped carbon compound heap poststack generates washmarking, feature exist
In: the method for forming the low dielectric layer is chemical vapour deposition technique.
5. the method that the cleaning according to claim 4 for improving nitrogen-doped carbon compound heap poststack generates washmarking, feature exist
In: the material of the low dielectric layer is BDII.
6. the method that the cleaning according to claim 5 for improving nitrogen-doped carbon compound heap poststack generates washmarking, feature exist
In: the method for forming the first, second nitrogen-doped carbon compound layer are as follows: tetramethylsilane and ammonia are provided, so that the two is completely anti-
The first, second nitrogen-doped carbon compound layer should be formed.
7. the method that the cleaning according to claim 6 for improving nitrogen-doped carbon compound heap poststack generates washmarking, feature exist
In: silico-carbo described in step 1-hydrogen-nitrogen compound formation is that incomplete reaction occurs by tetramethylsilane and ammonia to form institute
State silico-carbo-hydrogen-nitrogen compound.
8. the method that the cleaning according to claim 7 for improving nitrogen-doped carbon compound heap poststack generates washmarking, feature exist
In: the first nitrogen-doped carbon compound layer with a thickness of 250 angstroms.
9. the method that the cleaning according to claim 8 for improving nitrogen-doped carbon compound heap poststack generates washmarking, feature exist
In: described TEOS layers with a thickness of 150 angstroms.
10. the method that the cleaning according to claim 9 for improving nitrogen-doped carbon compound heap poststack generates washmarking, feature exist
In: the low dielectric layer with a thickness of 1570 angstroms.
11. the method that the cleaning according to claim 10 for improving nitrogen-doped carbon compound heap poststack generates washmarking, feature
Be: the second nitrogen-doped carbon compound layer with a thickness of 100 angstroms.
12. the method that the cleaning according to claim 11 for improving nitrogen-doped carbon compound heap poststack generates washmarking, feature
Be: described TEOS layers is finally decomposed to form silicon dioxide layer.
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