CN1099367A - Process of producing silicon carbide refractory products - Google Patents

Process of producing silicon carbide refractory products Download PDF

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Publication number
CN1099367A
CN1099367A CN 94110569 CN94110569A CN1099367A CN 1099367 A CN1099367 A CN 1099367A CN 94110569 CN94110569 CN 94110569 CN 94110569 A CN94110569 A CN 94110569A CN 1099367 A CN1099367 A CN 1099367A
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CN
China
Prior art keywords
silicon carbide
material mud
base substrate
vacuum
producing silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN 94110569
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Chinese (zh)
Inventor
赵润孝
栾鹤年
王彩霞
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ZICHUAN INDUSTRIAL CERAMIC FACTORY ZIBO CITY
Original Assignee
ZICHUAN INDUSTRIAL CERAMIC FACTORY ZIBO CITY
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Publication date
Application filed by ZICHUAN INDUSTRIAL CERAMIC FACTORY ZIBO CITY filed Critical ZICHUAN INDUSTRIAL CERAMIC FACTORY ZIBO CITY
Priority to CN 94110569 priority Critical patent/CN1099367A/en
Publication of CN1099367A publication Critical patent/CN1099367A/en
Pending legal-status Critical Current

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Abstract

Using silicon carbide powder as aggregate, clay as binder, by preparation of raw materials, compounding, stirring of slurry. Press shaping of blank, drying of blank, and roasting, the product is produced. Its feature is: a procedure of vacuum mixing of mud is added after stirring of slurry. The product produced by said technology is reduced its porosity by 3-5 fold, the oxidation resistance property is largely increased. It service life is increased by 50 percent.

Description

Process of producing silicon carbide refractory products
The present invention relates to the refractory product production technique.
With silicon carbide is the refractory product of base-material, and as good heat conduction, high temperature resistant and obstruct flame material is used in various technology kilns widely.This silicon carbide articles is to be that aggregate, clay or dextrin are made wedding agent with the carborundum powder, is stirred pressure forming base, body drying and operation such as burn till and make by feedstock production, batching, material mud.In above-mentioned technology, because the imperfection (generally adopting mechanical stirring) of pug agitating procedure itself, use this material mud through the pressure forming base, base substrate internal moisture and solid particulate distributions are inhomogeneous, and contain the air of base substrate volume 5%, this body drying, the product that is fired into, the density unevenness at its inner each position is even, void content is higher, be generally 18% of small product size, had a strong impact on the anti-oxidation performance and the work-ing life of goods, use is promptly accused corrupted about 100 times in 1100 ℃ industry kiln.
The purpose of this invention is to provide a kind of process of producing silicon carbide refractory products, by the product that this technology makes, its void content is reduced to about the 6-8% of small product size, has improved anti-oxidation performance greatly, thereby has increased the service life.
Process of producing silicon carbide refractory products of the present invention, with the carborundum powder is aggregate, clay is wedding agent, through feedstock production, operations such as batching, the stirring of material mud, base substrate pressure forming, body drying, base substrate burn till are made, the major technology characteristics are, between above-mentioned material mud agitating procedure and base substrate pressure forming operation, add the vacuum pugging operation one, being about to the material mud that agitating procedure comes out sends in the vacuum deairing machine, left alone without helply under vacuum tightness 9.4-9.8 MPa stay 3-10 minute, remove to carry out the pressure forming base again through vacuum treated above-mentioned material mud.
Vacuum tightness in the described vacuum deairing machine is preferably the 9.6-9.8 MPa, and mud is left alone without help stays time 4-6 minute for material.
For refractory temperature and the thermal shock resistance that improves these goods, add mullite or trichroite powder in the prescription, its dried composition of raw materials is (weight %): carborundum powder 50-95, clay 2-25, mullite or trichroite powder 0-30, the moisture content of adding are the heavy 10-20% of siccative.
For guaranteeing the anti-oxidation performance of product, the carbonized granularity of using in the batching is the 10-200 order, clay size 60-80 order, and mullite or trichroite granularity are the 120-200 order.
Technology of the present invention, because material mud has carried out vacuum-treat, volume of air can be reduced to 0.5-1% in the material mud, plasticity-, uniformity coefficient and density all increase, the void content that correspondingly burns till the back goods has reduced 3-5 doubly, is the 6-8% of product volume, thereby has improved its anti-oxidation performance greatly, can use about 150 times under 1100 ℃, the life-span has improved 50%.

Claims (2)

1, process of producing silicon carbide refractory products, with the carborundum powder is aggregate, clay is a wedding agent, through feedstock production, batching, the stirring of material mud, base substrate pressure forming, operations such as body drying, base substrate burn till make, and it is characterized in that, add the vacuum pugging operation between above-mentioned material mud agitating procedure and base substrate pressure forming operation, the material mud that agitating procedure comes out is sent in the vacuum deairing machine, left alone without helply under vacuum tightness 9.4--9.8 MPa stayed 3--10 minute.
According to the described technology of claim 1, it is characterized in that 2, the vacuum tightness in the described vacuum deairing machine is the 9.6-9.8 MPa, the left alone without help time 4-6 clock that stays of material mud.
CN 94110569 1994-05-03 1994-05-03 Process of producing silicon carbide refractory products Pending CN1099367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 94110569 CN1099367A (en) 1994-05-03 1994-05-03 Process of producing silicon carbide refractory products

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 94110569 CN1099367A (en) 1994-05-03 1994-05-03 Process of producing silicon carbide refractory products

Publications (1)

Publication Number Publication Date
CN1099367A true CN1099367A (en) 1995-03-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN 94110569 Pending CN1099367A (en) 1994-05-03 1994-05-03 Process of producing silicon carbide refractory products

Country Status (1)

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CN (1) CN1099367A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1059883C (en) * 1995-04-20 2000-12-27 郑州华宇耐火材料集团公司 Semi-graphilized silicon carbonitride and producing method thereof
CN101255057B (en) * 2008-03-25 2010-08-11 西安交通大学 Silicon nitride porous ceramic composition and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1059883C (en) * 1995-04-20 2000-12-27 郑州华宇耐火材料集团公司 Semi-graphilized silicon carbonitride and producing method thereof
CN101255057B (en) * 2008-03-25 2010-08-11 西安交通大学 Silicon nitride porous ceramic composition and preparation method thereof

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