CN1099368A - Process of making silicon carbide refractory board - Google Patents
Process of making silicon carbide refractory board Download PDFInfo
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- CN1099368A CN1099368A CN 94110570 CN94110570A CN1099368A CN 1099368 A CN1099368 A CN 1099368A CN 94110570 CN94110570 CN 94110570 CN 94110570 A CN94110570 A CN 94110570A CN 1099368 A CN1099368 A CN 1099368A
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Abstract
The main technical feature of this invention is: the shaping of blank is by casting. Silicon carbide fire-proof board with thickness of only 1cm. may be produced without deformation. The surface porosity of product is reduced, its oxidation resistance property is increased. Its service life is raised by 30-50 percent. The press shaping machine is saved.
Description
The present invention relates to the refractory materials production technique.
Silicon carbide is the goods of base-material, is used widely industrial, and for example it can be used as a kind of thermo electric material, abrasive substance etc., but the application quantity maximum is to use in Industrial Stoves as refractory materials, as roller kiln, and the silicon carbide sheet material that uses in the tunnel furnace.These fire resisting plates are aggregate with the carborundum powder, add clay or dextrin etc. as wedding agent, by feedstock production, batching, pug mix, the pressure forming of base substrate, body drying, base substrate operation such as burn till and make.With the sheet material that above-mentioned technology makes, its thickness can not be less than 5 centimetres, otherwise base substrate easily deforms in dry, sintering procedure, in addition, with the base substrate of pressure forming, surface porosity factor is higher, at high temperature use, its anti-aging capability is undesirable, and 1100 ℃ are used down, and its life-span is generally about 100 times, the price of pressure forming machine is higher, unit production capacity in man-hour is limited, if purchase many, certainly will cause facility investment very big.
The objective of the invention is, a kind of process of making silicon carbide refractory board is provided, this technology can make thickness only 1 centimetre sheet material and do not deform, the plate surface porosity reduces, improves its anti-aging capability, has prolonged work-ing life.
Process of making silicon carbide refractory board of the present invention, with the carborundum powder is aggregate, make wedding agent with clay, by feedstock production, batching, pug mixes, blank forming, body drying, operations such as base substrate burns till are made, and the major technology characteristics are, described blank forming operation is cast molding, be about to pug after calendering and pour in the mould, after the sclerosis base substrate is taken out, for adapting to the needs of cast molding, the flowability of its pug will suit, obviously to adjust original proportioning raw materials, and attach, in order to improve its thermal shock resistance as electrolytical water glass and soda ash, allocate mullite or trichroite powder into, its dried composition of raw materials is (weight %), carborundum powder 50-90, clay 2-25, water glass 0.1-0.5, soda ash 0.1-0.4, mullite or trichroite powder 0-30 are the 30-38% of dried raw material gross weight with addition of the water of going into.
The best proportioning of above-mentioned prescription is (weight %), carborundum powder 80-90, and clay-15, water glass 0.2-0.4, soda ash 0.2-0.3, violet come stone or trichroite 5-20, and the water of allocating into is the 32-35% of dried raw material gross weight.
For guaranteeing the antioxidant property of product, the granularity of carborundum powder is preferably the 10-200 order in the prescription, and the granularity of clay is the 60-80 order, and the granularity of mullite or trichroite powder is the 120-200 order.
Process of making silicon carbide refractory board of the present invention, because base substrate adopts casting forming, its internal stress is little, is 1 centimetre sheet material only so can produce thickness, and does not deform, in the casting forming process, the aggregate of particulate is deposited on billet surface, the porosity of product surface is reduced, thereby improved antioxidant property, can use under 1100 ℃ 150 times, the life-span is improved 30-50%.Use casting molding process in addition, saved pressure forming machine, saved facility investment.
Details are as follows for specific embodiments of the invention:
At first be the feedstock production burden process, doing proportioning raw materials is (weight %): granularity 10-200 purpose carborundum powder 80, clay 15, water glass 0.3, soda ash silicon 0.25.Mullite or trichroite powder 3, the water of allocating into is 35% of siccative gross weight, send the operation of mixing with confected materials, slip is inserted in the ball mill grind earlier, requires mud granularity behind the mill to be that 10000-hole sieve is residual and is not more than (weight %) 0.5.The slip that mill is good is put into and was mixed the old 1-2 of stock tank days then, carries out cast molding, and mould is a gypsum mold, at first that mould is dry down at 60 ℃, use front mold moisture should be less than (weight %) 2, and the back is coated with lubricant and casts on mould inner surface, after base substrate sclerosis in 3-5 hour, from mould, take out base substrate, the base substrate of forming descended dry 48 hours at 60 ℃, inserted then and burnt till in the down-draft kiln, and firing temperature is 1400-1480 ℃, the burning time is 60-96 hour, promptly gets the finished product.
Claims (8)
1, process of making silicon carbide refractory board is an aggregate with the carborundum powder, and clay is a wedding agent, by feedstock production, batching, pug mix, blank forming, body drying, base substrate operation such as burn till and make, and it is characterized in that:
A: described molding procedure is cast molding, is about to pug after calendering and inserts in the mould, after the sclerosis base substrate is taken out,
B: raw material adds as electrolytical water glass and soda ash, and mullite or trichroite powder,
C: doing proportioning raw materials is (weight %): carborundum powder 50-95, and clay 2-25, water glass 0.1-0.5, soda ash 0.1-0.4, mullite or trichroite powder 0-30, the water of allocating into is the 30-38% of dried raw material gross weight.
According to the described manufacturing process of claim 1, it is characterized in that 2, doing proportioning raw materials is (weight %): carborundum powder 80-90, clay 5-15, water glass 0.2-0.4, soda ash 0.2-0.3, mullite or trichroite 5-20, the water of allocating into are the 32-35% of dried raw material gross weight.
According to wanting profit to require 1 or 2 described manufacturing process, it is characterized in that 3, described carborundum powder granularity is the 10-200 order, clay size is the 60-80 order, and the granularity of mullite or trichroite powder is the 120-200 order.
According to claim 1 or 2 described manufacturing process, it is characterized in that 4, described mud granularity is that 10000-hole sieve residual (weight %) is less than 0.5.
According to the described manufacturing process of claim 3, it is characterized in that 5, described mud granularity is that 10000-hole sieve residual (weight %) is less than 0.5.
According to claim 1 or 2 or 5 described manufacturing process, it is characterized in that 6, described cast molding mould is a gypsum mold, its moisture (weight %) is less than 2.
According to the described manufacturing process of claim 3, it is characterized in that 7, described cast molding mould is a gypsum mold, its moisture (weight %) is less than 2.
According to the described manufacturing process of claim 4, it is characterized in that 8, described cast molding mould is a gypsum mold, its moisture (weight %) is less than 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 94110570 CN1099368A (en) | 1994-05-03 | 1994-05-03 | Process of making silicon carbide refractory board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN 94110570 CN1099368A (en) | 1994-05-03 | 1994-05-03 | Process of making silicon carbide refractory board |
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CN1099368A true CN1099368A (en) | 1995-03-01 |
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CN 94110570 Pending CN1099368A (en) | 1994-05-03 | 1994-05-03 | Process of making silicon carbide refractory board |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101966724A (en) * | 2010-09-03 | 2011-02-09 | 山东理工大学 | Preparation method of extrusion molding silicon carbide deck |
CN102153347A (en) * | 2011-01-21 | 2011-08-17 | 武汉理工大学 | Method for quickly synthesizing Ti3SiC2 submicron powder |
CN102775163A (en) * | 2012-07-25 | 2012-11-14 | 江苏省陶瓷研究所有限公司 | Silicon carbide-cordierite composite ceramic kiln furniture and preparation method thereof |
CN101374784B (en) * | 2005-11-21 | 2013-07-17 | 西门子公司 | Moulding mixture for the production of a refractory lining |
CN103360098A (en) * | 2012-04-05 | 2013-10-23 | 深圳光启创新技术有限公司 | Metamaterial substrate and preparation method thereof |
-
1994
- 1994-05-03 CN CN 94110570 patent/CN1099368A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101374784B (en) * | 2005-11-21 | 2013-07-17 | 西门子公司 | Moulding mixture for the production of a refractory lining |
CN101966724A (en) * | 2010-09-03 | 2011-02-09 | 山东理工大学 | Preparation method of extrusion molding silicon carbide deck |
CN101966724B (en) * | 2010-09-03 | 2012-09-05 | 山东理工大学 | Preparation method of extrusion molding silicon carbide deck |
CN102153347A (en) * | 2011-01-21 | 2011-08-17 | 武汉理工大学 | Method for quickly synthesizing Ti3SiC2 submicron powder |
CN102153347B (en) * | 2011-01-21 | 2013-03-20 | 武汉理工大学 | Method for quickly synthesizing Ti3SiC2 submicron powder |
CN103360098A (en) * | 2012-04-05 | 2013-10-23 | 深圳光启创新技术有限公司 | Metamaterial substrate and preparation method thereof |
CN103360098B (en) * | 2012-04-05 | 2016-03-09 | 深圳光启高等理工研究院 | A kind of metamaterial substrate and preparation method thereof |
CN102775163A (en) * | 2012-07-25 | 2012-11-14 | 江苏省陶瓷研究所有限公司 | Silicon carbide-cordierite composite ceramic kiln furniture and preparation method thereof |
CN102775163B (en) * | 2012-07-25 | 2013-12-18 | 江苏省陶瓷研究所有限公司 | Silicon carbide-cordierite composite ceramic kiln furniture and preparation method thereof |
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