CN109933118A - 通过采样和保持电路提高参考电位的电源纹波抑制比电路及其控制方法 - Google Patents
通过采样和保持电路提高参考电位的电源纹波抑制比电路及其控制方法 Download PDFInfo
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CN201910301009.9A CN109933118A (zh) | 2019-04-15 | 2019-04-15 | 通过采样和保持电路提高参考电位的电源纹波抑制比电路及其控制方法 |
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CN201910301009.9A CN109933118A (zh) | 2019-04-15 | 2019-04-15 | 通过采样和保持电路提高参考电位的电源纹波抑制比电路及其控制方法 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20120286890A1 (en) * | 2011-05-13 | 2012-11-15 | Seiko Epson Corporation | Temperature-compensated oscillator and electronic device |
CN108153366A (zh) * | 2018-02-27 | 2018-06-12 | 上海灿瑞科技股份有限公司 | 一种过压保护电路 |
CN210038591U (zh) * | 2019-04-15 | 2020-02-07 | 南京能芯半导体有限公司 | 通过采样和保持电路提高参考电位的电源纹波抑制比电路 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120286890A1 (en) * | 2011-05-13 | 2012-11-15 | Seiko Epson Corporation | Temperature-compensated oscillator and electronic device |
CN108153366A (zh) * | 2018-02-27 | 2018-06-12 | 上海灿瑞科技股份有限公司 | 一种过压保护电路 |
CN210038591U (zh) * | 2019-04-15 | 2020-02-07 | 南京能芯半导体有限公司 | 通过采样和保持电路提高参考电位的电源纹波抑制比电路 |
Non-Patent Citations (1)
Title |
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洪志良: "高速A/D变换器及其基本单元电路" * |
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Effective date of registration: 20210506 Address after: 210008 room B401 and room b402, 4th floor, Tower B, Tengfei building, R & D Park, Jiangbei new district, Nanjing City, Jiangsu Province (Nanjing area of free trade zone) Applicant after: NANJING RONGXIN MICROELECTRONIC Co.,Ltd. Address before: Room 950, Takeoff Building, 88 Jiangzhao Road, Yanchuangyuan, Jiangbei New District, Nanjing City, Jiangsu Province, 210000 Applicant before: NANJING NENGXIN SEMICONDUCTOR Co.,Ltd. |
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Effective date of registration: 20220117 Address after: 213022 building 8-5, Huashan Road, Xinbei District, Changzhou City, Jiangsu Province Applicant after: JIANGSU APPLIED POWER MICROELECTRONICS Co.,Ltd. Address before: 210008 room B401 and room b402, 4th floor, Tower B, Tengfei building, R & D Park, Jiangbei new district, Nanjing City, Jiangsu Province (Nanjing area of free trade zone) Applicant before: NANJING RONGXIN MICROELECTRONIC Co.,Ltd. |
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Address after: Building 4 (8th and 9th floor), No. 5 Chuangzhi Road, Tianning District, Changzhou City, Jiangsu Province, 213000 Applicant after: Jiangsu Yingneng Microelectronics Co.,Ltd. Address before: 213022 building 8-5, Huashan Road, Xinbei District, Changzhou City, Jiangsu Province Applicant before: JIANGSU APPLIED POWER MICROELECTRONICS Co.,Ltd. |
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Application publication date: 20190625 |