CN109921641A - A kind of control circuit and its control method of adaptive difference current mould - Google Patents

A kind of control circuit and its control method of adaptive difference current mould Download PDF

Info

Publication number
CN109921641A
CN109921641A CN201910217323.9A CN201910217323A CN109921641A CN 109921641 A CN109921641 A CN 109921641A CN 201910217323 A CN201910217323 A CN 201910217323A CN 109921641 A CN109921641 A CN 109921641A
Authority
CN
China
Prior art keywords
enhanced
tube
side power
pmos tube
nmos tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201910217323.9A
Other languages
Chinese (zh)
Other versions
CN109921641B (en
Inventor
胡正海
黄九洲
夏炎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing Xin Li Microtronics AS
Original Assignee
Nanjing Xin Li Microtronics AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing Xin Li Microtronics AS filed Critical Nanjing Xin Li Microtronics AS
Priority to CN201910217323.9A priority Critical patent/CN109921641B/en
Publication of CN109921641A publication Critical patent/CN109921641A/en
Application granted granted Critical
Publication of CN109921641B publication Critical patent/CN109921641B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Amplifiers (AREA)

Abstract

The control circuit and its control method of a kind of adaptive difference current mould disclosed by the invention, it include: high side power PMOS tube, low side power NMOS tube, feedback resistance R1, R2, adaptive error amplifier, sample the current sampling circuit of high side power PMOS tube and low side power NMOS tube electric current, for comparing the hysteresis comparator circuit of the signal of current sampling circuit and error amplifier output, the pwm control circuit for generating PWM output signal provides the power tube Driver circuit of driving signal to high side power PMOS tube and low side power NMOS tube.Transient response speed can be improved in the present invention, while simplified architecture reduces power consumption, saves oscillator and slope compensation circuit compared to traditional PWM peak value Current limited Control method, output voltage ripple can be greatly lowered, and improve system stability.

Description

A kind of control circuit and its control method of adaptive difference current mould
Technical field
The invention belongs to the control circuit of the technical field of integrated circuit more particularly to a kind of adaptive difference current mould and Its control method.
Background technique
LED (light emitting diode) backlight has better colour gamut and lower power consumption than cold light lamp backlight, while also having more Fast response speed, booster type DC-DC converter are just widely used in LED backlight display system, low input are promoted to High output voltage, to drive multiple concatenated LED.In LED application, boost converter needs to deal with a large amount of momentary loads and becomes Change to guarantee picture quality, therefore the booster type DC-DC converter for being applied to similar applications needs outstanding transient response, simultaneously Also power consumption is reduced, is improved efficiency.
Common PWM Peak Current Mode control circuit can be realized the output of degree of precision, but be greater than 50% in duty ratio In the case where exist and be difficult to the error of the peak point current and average current corrected, will cause the unstable of circuit, while LED is applied Occasion is also required to the transient response ability of higher speed.
Summary of the invention
Goal of the invention: cause that circuit is unstable, wink to solve the error of above-mentioned prior art peak point current and average current The slow problem of state response speed, the present invention provide the control circuit and its control method of a kind of adaptive difference current mould.
Technical solution: the present invention provides a kind of control circuit of adaptive difference current mould, including the first inductance, capacitor, First~3rd resistor, high side power PMOS tube, low side power NMOS tube, adaptive error amplifier, current sampling circuit, late Stagnant comparator, pwm control logic circuit, power tube Driver circuit;The current sampling circuit includes the first current sample electricity Road and the second current sampling circuit, current sample electricity during first current sampling circuit is the conducting of high side power PMOS tube Road, current sampling circuit during second current sampling circuit is low side power NMOS transistor conduction, first current sample Circuit includes the first operational amplifier;Second current sampling circuit includes second operational amplifier;
The capacitor latter end ground connection in parallel with 3rd resistor, other end is the output end of circuit;The one of first resistor End connect respectively with the drain electrode of the output end of circuit, high side power PMOS tube, other end respectively with one end of second resistance, oneself Adapt to the inverting input terminal connection of error amplifier;The other end of second resistance is grounded, the adaptive error amplifier Output end connects the inverting input terminal of hysteresis comparator, and the non-inverting input terminal of the hysteresis comparator connects the first operational amplifier Output end and second operational amplifier output end;The inverting input terminal of first operational amplifier connects low side power The drain electrode of NMOS tube, non-inverting input terminal connect the drain electrode of high side power PMOS tube;The homophase input of the second operational amplifier The drain electrode of end connection low side power NMOS tube, inverting input terminal connect the source electrode of low side power NMOS tube;The low side power The source electrode of NMOS tube is grounded, and drain electrode is connect with one end of the source electrode of high side power PMOS tube, the first inductance respectively;The sluggishness ratio Output end compared with device is connect with the input terminal of pwm control logic circuit;The output end and power tube of pwm control logic circuit The input terminal of Driver circuit connects, the output end of power tube Driver circuit be separately connected low side power NMOS tube grid and The grid of low side power NMOS tube.
Further, the adaptive error amplifier includes: the first~the eight enhanced PMOS tube, the 4th resistance, One~the 6th enhanced NMOS tube, third operational amplifier, DC power supply;
The grid of the first enhanced PMOS tube and drain electrode are shorted, and connect the grid of the second enhanced PMOS tube, institute State the drain electrode of drain electrode the first enhanced NMOS tube of connection of the first enhanced PMOS tube;The source electrode of first enhanced NMOS tube connects The drain electrode of two enhanced NMOS tubes, the source electrode ground connection of the second enhanced NMOS tube, the grid of the first enhanced NMOS tube connect The output end of third operational amplifier is connect, the inverting input terminal of the third operational amplifier is separately connected the second enhanced NMOS The drain electrode of the enhanced PMOS tube of the grid of pipe, third and the drain electrode of the enhanced NMOS tube of third;The third operational amplifier Non-inverting input terminal connects the grid of the enhanced NMOS tube of third and the grid of the 4th enhanced NMOS tube;Described 4th is enhanced The grid of the enhanced NMOS tube of grid and third of NMOS tube is all connected with bias voltage;The grid of the enhanced PMOS tube of third For the non-inverting input terminal of the adaptive error amplifier;The enhanced PMOS tube source electrode of the third connect the 4th resistance one end and The drain electrode of second enhanced PMOS tube;The other end of 4th resistance connects the source electrode and the 5th of the 4th enhanced PMOS tube The drain electrode of enhanced NMOS tube;The grid and the 4th of drain electrode the 5th enhanced NMOS tube of connection of the 4th enhanced PMOS tube The drain electrode of enhanced NMOS tube;The grid of the 5th enhanced NMOS tube connects the grid of the 6th enhanced NMOS tube, described The drain electrode of 6th enhanced NMOS tube be adaptive error amplifier out, and connect the 8th enhanced PMOS tube drain electrode and The grid of 7th enhanced PMOS tube;The source electrode of the 7th enhanced PMOS tube connect the 6th enhanced PMOS tube drain electrode and The grid of 8th enhanced PMOS tube;The grid of the 6th enhanced PMOS tube connects the grid of the 5th enhanced PMOS tube, The drain electrode of the 5th enhanced PMOS tube and grid are shorted, and are connect with the cathode of DC source;The first enhanced PMOS The source electrode of pipe, the source electrode of the second enhanced PMOS tube, the source electrode of the 5th enhanced PMOS tube, the 6th enhanced PMOS tube source Pole, the 8th enhanced PMOS tube source electrode connect with supply voltage VDD;The source electrode of the enhanced NMOS tube of third, the 4th The source electrode of enhanced NMOS tube, the source electrode of the 5th enhanced NMOS tube, DC source anode, the 7th enhanced PMOS tube leakage Pole, the 6th enhanced PMOS tube source electrode ground connection.
Further, first current sampling circuit further includes the 9th enhanced PMOS tube, the 5th resistance;Described 9th The inverting input terminal of drain electrode connection, the drain electrode and the first operational amplifier of the source electrode and low side power NMOS tube of enhanced PMOS tube It is connected with one end of the 5th resistance, grid is connect with the grid of high side power PMOS tube, the other end of the 5th resistance and The non-inverting input terminal of one operational amplifier connects.
Further, second current sampling circuit further includes the seven, the eight enhanced NMOS tubes;Described 7th is enhanced The drain electrode of the source electrode connection low side power NMOS tube of NMOS tube;The non-inverting input terminal of drain electrode connection second operational amplifier, it is described The grid of 7th enhanced NMOS tube and the grid of the 8th enhanced NMOS tube are all connected with the grid of low side power NMOS tube;It is described The inverting input terminal of the drain electrode connection second operational amplifier of 8th enhanced NMOS tube;Source electrode connects low side power NMOS tube Source electrode.
A kind of control method of adaptive difference current mould:
When the first inductive current rises, low side power NMOS transistor conduction, the shutdown of high side power PMOS tube, the first inductance Electric current flows to ground terminal by low side power NMOS tube, and the variation that second operational amplifier rises the electric current of the first inductance is converted At voltage signal VSENSE2, as VSENSE2=VC+Vhys, the electric current of the first inductance reaches maximum value;Power tube at this time The electric signal control high side power PMOS tube conducting of Driver circuit output, the shutdown of low side power NMOS tube;VC is adaptive misses Poor amplifier output voltage;Vhys is the hysteresis voltage that hysteresis comparator itself generates;
When high side power PMOS tube is connected, and low side power NMOS tube turns off, the first inductance L passes through high side power PMOS tube To capacitor charging, the electric current of the first inductance is gradually reduced at this time, the change that the first operational amplifier declines the electric current of the first inductance Change is converted into voltage signal VSENSE1, and as VSENSE1=VC-Vhys, the electric current of the first inductance reaches minimum value;Function at this time The electric signal control high side power PMOS tube shutdown of rate pipe Driver circuit output, low side power NMOS transistor conduction.
The utility model has the advantages that reducing domain face this invention simplifies oscillator in the prior art and slope compensation part Long-pending and current drain, and output voltage precision can be improved, reduce output voltage ripple, while further improving transient response speed Degree, dynamic regulation inductive current difference, improves system stability under different load conditions.
Detailed description of the invention
Fig. 1 is the Peak Current Mode pwm control circuit schematic diagram of the prior art;
Fig. 2 is circuit theory of the invention;
Fig. 3 is adaptive error amplifier circuit diagram of the invention;
Current sampling circuit during Fig. 4 is high side power PMOS tube conducting of the invention;
Current sampling circuit during Fig. 5 is low side power NMOS transistor conduction of the invention.
Specific embodiment
The attached drawing for constituting a part of the invention is used to provide further understanding of the present invention, schematic reality of the invention It applies example and its explanation is used to explain the present invention, do not constitute improper limitations of the present invention.
As shown in Figure 1, common PWM Peak Current Mode control circuit includes two negative feedback resistors, power tube PMOS, function Rate NMOS tube, error amplifier, current sampling circuit, oscillator, Ramp generation circuit, PWM comparator, Driver module.On It states shown circuit structure and obtains feedback voltage V by two negative feedback resistorsFB, error amplification signal is obtained by error amplifier VC samples the Islope Signal averaging that inductance peak point current and oscillator generate by current sampling circuit and obtains VRamp, then by PWM comparator is compared VC and VRamp, and obtained signal and oscillator clock signal co- controlling Driver module generates The signal of driving power pipe grid.
The control circuit of the adaptive difference current mould of the present embodiment is improved in foregoing circuit, specifically such as Fig. 2 institute Show, comprising: the first inductance L, capacitor C0, first~3rd resistor (R1, R2, R3), high side power PMOS tube, low side power NMOS Pipe, adaptive error amplifier, current sampling circuit, hysteresis comparator, pwm control logic circuit, power tube Driver circuit; The current sampling circuit includes the first current sampling circuit and the second current sampling circuit, and first current sampling circuit is Current sampling circuit during high side power PMOS tube is connected, second current sampling circuit are the low side power NMOS transistor conduction phase Between current sampling circuit, first current sampling circuit include the first operational amplifier OPA1;The second current sample electricity Road includes second operational amplifier OPA2.
The capacitor C0 latter end ground connection in parallel with R3, other end is the output end of circuit;One end of first resistor R1 Connect respectively with the drain electrode of the output end of circuit, high side power PMOS tube, other end respectively with one end of second resistance R2, from Adapt to the inverting input terminal connection of error amplifier;The other end of second resistance R2 is grounded, the adaptive error amplifier Output end connection hysteresis comparator inverting input terminal, the non-inverting input terminal of the hysteresis comparator connects the first operation amplifier The output end of device OPA1 and the output end of second operational amplifier OPA2;The inverting input terminal of the first operational amplifier OPA1 The drain electrode of low side power NMOS tube is connected, non-inverting input terminal connects the drain electrode of high side power PMOS tube;Second operation amplifier The drain electrode of the non-inverting input terminal connection low side power NMOS tube of device OPA, inverting input terminal connect the source electrode of low side power NMOS tube; The source electrode of the low side power NMOS tube is grounded, and drain electrode connects with one end of the source electrode of high side power PMOS tube, the first inductance L respectively It connects;The output end of the hysteresis comparator is connect with the input terminal of pwm control logic circuit;The output of pwm control logic circuit End is connect with the input terminal of power tube Driver circuit, and the output end of power tube Driver circuit is separately connected low side power NMOS The grid of pipe and the grid of low side power NMOS tube.
Feedback resistance R1, R2 sampling and outputting voltage passes through adaptively with from using the reference voltage Vref inside amplifier Error amplifier obtains the VC signal adaptively adjusted with load variation, passes through the high side power PMOS in current sampling module Current sampling circuit carries out complete cycle to inductive current during current sampling circuit and low side power NMOS transistor conduction during pipe is connected Phase samples and is converted to voltage signal VSENSE1/VSENSE2, and VC signal and VSENSE1/VSENSE2 signal are sent into sluggish ratio VPWM signal is obtained compared with device, obtains driving high side power using pwm control logic circuit and power tube Driver circuit The signal of PMOS tube and low side power NMOS tube grid, to control inductive current difference to realize the stabilization of system.Compared to normal The PWM Peak Current Mode control method of rule, adaptive difference current mould eliminate oscillator and due to system instability And the slope compensation circuit introduced, it saves chip area while reducing power consumption, further, adaptive difference current mould will The difference of inductive current is set as definite value, and as load changes automatic adjusument inductive current difference, due to inductive current difference Fixed rather than inductive current has to reach maximum value in PWM Peak Current Mode, the response speed of adaptive difference current mould is more Fast and output voltage ripple is also smaller.
As shown in figure 3, it includes: that the adaptive error amplifier of the present embodiment, which includes: the adaptive error amplifier, One~the eight enhanced PMOS tube (MP1~MP8), the 4th resistance R4, the first~the six enhanced NMOS tube (MN1~MN6), Three operational amplifier OPA3, DC power supply Ib1.
The grid of the first enhanced PMOS tube MP1 and drain electrode are shorted, and connect the grid of the second enhanced PMOS tube MP2 Pole, the drain electrode of the first enhanced NMOS tube MN1 of drain electrode connection of the first enhanced PMOS tube MP1;First enhanced NMOS The source electrode of pipe MN1 connects the drain electrode of the second enhanced NMOS tube MN2, and the source electrode of the second enhanced NMOS tube MN2 is grounded, and described first The output end of the grid connection third operational amplifier OPA3 of enhanced NMOS tube MN1, the third operational amplifier OPA3's Inverting input terminal is separately connected the grid of the second enhanced NMOS tube MN2, the drain electrode of the enhanced PMOS tube MP3 of third and third and increases The drain electrode of strong type NMOS tube MN3;The non-inverting input terminal of the third operational amplifier OPA3 connects the enhanced NMOS tube MN3 of third Grid and the 4th enhanced NMOS tube MN4 grid;The grid and third of the 4th enhanced NMOS tube MN4 is enhanced The grid of NMOS tube MN3 is all connected with bias voltage;The grid of the enhanced PMOS tube MP3 of third is adaptive error amplification The non-inverting input terminal of device;The source electrode of the enhanced PMOS tube MP3 of third connects one end of the 4th resistance R4 and second enhanced The drain electrode of PMOS tube MP2;The other end of the 4th resistance R4 connects the source electrode of the 4th enhanced PMOS tube MP4 and the 5th and increases The drain electrode of strong type NMOS tube MN5;The grid of the 5th enhanced NMOS tube MN5 of drain electrode connection of the 4th enhanced PMOS tube MP4 The drain electrode of pole and the 4th enhanced NMOS tube MN4;The grid of the 5th enhanced NMOS tube MN5 connects the 6th enhanced NMOS The grid of pipe MN6, the drain electrode of the 6th enhanced NMOS tube MN6 is adaptive error amplifier out, and connects the 8th The drain electrode of enhanced PMOS tube MP8 and the grid of the 7th enhanced PMOS tube MP7;The source of the 7th enhanced PMOS tube MP7 Pole connects drain electrode and the grid of the 8th enhanced PMOS tube MP8 of the 6th enhanced PMOS tube MP6;The 6th enhanced PMOS The grid of pipe MP6 connects the grid of the 5th enhanced PMOS tube MP5, the drain electrode of the 5th enhanced PMOS tube MP5 and grid It is shorted, and is connect with the cathode of DC source;The source electrode of the first enhanced PMOS tube MP1, the second enhanced PMOS tube MP2 Source electrode, the source electrode of the 5th enhanced PMOS tube MP5, the 6th enhanced PMOS tube MP6 source electrode, the 8th enhanced PMOS tube MP8 Source electrode connect with supply voltage VDD;The source electrode of the enhanced NMOS tube MN3 of third, the 4th enhanced NMOS tube MN4 Source electrode, the source electrode of the 5th enhanced NMOS tube MN5, the anode of DC source, the drain electrode of the 7th enhanced PMOS tube MP7, the 6th increase The source electrode of strong type PMOS tube MP6 is grounded.
When load current increases, VFB voltage is reduced, and is equivalent to the raising of Vref voltage, is flowed into the enhanced NMOS tube of third The electric current of MN3 reduces, and the inverting input terminal voltage of third operational amplifier OPA3 reduces, and will make third operational amplifier OPA3's Output increases, and the electric current of the enhanced PMOS tube MP2 of the first enhanced PMOS tube MP1 and second of current mirror is increased, due to third The grid of the enhanced enhanced NMOS tube MN4 of NMOS tube MN3 and the 4th connect Vbias voltage (bias voltage) and be in Saturation region, then flow into the enhanced enhanced NMOS tube MN4 of NMOS tube MN3 and the 4th of third electric current may be considered it is identical, When VFB voltage reduces, the electric current for flowing into the 4th enhanced NMOS tube MN4 increases, the 5th enhanced NMOS tube MN5 grid Voltage increases, therefore increased electric current △ I is all enhanced to the 5th from the 4th resistance R4 on the second enhanced PMOS tube MP2 It is flowed out on the path of NMOS tube MN5, so producing potential difference between A point and B point, VA-VB=△ I*R4 is equal to adaptive One is introduced in error amplifier can be with the sluggishness of self-adapting load electric current.The output of the adaptive error amplifier is finally led to Cross the 6th enhanced NMOS tube MN6 and obtain voltage VC, obtained in hysteresis comparator later with sample rate current circuit by electricity The voltage signal changed into that circulates compares, and controls the switch of power tube to reach output and stablize.
The 5th enhanced PMOS tube MP5, the 6th enhanced PMOS tube MP6, the 7th enhanced PMOS tube MP7, the 8th Enhanced PMOS tube MP8 forms peak value current-limiting circuit;When load current rises, VFB voltage declines, the 6th enhanced PMOS tube The gate input voltage of MN6 increases, and VC voltage is caused to decline, then the source voltage of the 7th enhanced PMOS tube MP7 reduces, i.e., and the The grid potential of eight enhanced PMOS tube MP8 reduces, and the enhanced PMOS tube MP8 of the 8th at this time forms VC voltage high negative Feedback carries out the control of peak point current by limiting the potential minimum of VC.
As shown in figure 4, first current sampling circuit further includes the 9th enhanced PMOS tube MP9, the 5th resistance R5;Institute The source electrode for stating the 9th enhanced PMOS tube MP9 connect with the drain electrode of low side power NMOS tube, drains and the first operational amplifier The inverting input terminal of OPA1 is connected with one end of the 5th resistance R5, and grid is connect with the grid of high side power PMOS tube, and described The other end of five resistance R5 is connect with the non-inverting input terminal of the first operational amplifier OPA1.
As shown in figure 5, second current sampling circuit further include the 7th enhanced NMOS tube MN7, it is the 8th enhanced NMOS tube MN8;The drain electrode of the source electrode connection low side power NMOS tube of the 7th enhanced NMOS tube MN7;Drain electrode connection second The non-inverting input terminal of operational amplifier OPA2, the grid and the 8th enhanced NMOS tube MN8 of the 7th enhanced NMOS tube MN7 Grid be all connected with the grid of low side power NMOS tube;The drain electrode of the 8th enhanced NMOS tube MN8 connects the second operation and puts The inverting input terminal of big device OPA2;The source electrode of source electrode connection low side power NMOS tube.
A kind of control method of adaptive difference current mould: when the first inductance L electric current rises, low side power NMOS tube is led Logical, high side power PMOS tube shutdown, the electric current of the first inductance L flows to ground terminal by low side power NMOS tube, and the second operation is put The variation that the electric current of first inductance L rises is converted into voltage signal VSENSE2 by big device OPA2;VSENSE2=K2*IL*ROUT21; K2 is proportionality coefficient, ILFor the electric current of the first inductance, ROUT21For in second operational amplifier (OPA2) afterbody it is equivalent defeated Impedance out;As VSENSE2=VC+Vhys, the electric current of the first inductance L reaches maximum value;Power at this time The electric signal control high side power PMOS tube conducting of pipe Driver circuit output, the shutdown of low side power NMOS tube;VC is adaptive Output voltage error amplifier;Vhys is the hysteresis voltage that hysteresis comparator itself generates;
When high side power PMOS tube is connected, and low side power NMOS tube turns off, the first inductance L passes through high side power PMOS tube To capacitor charging, the electric current of the first inductance L is gradually reduced at this time, and the first operational amplifier OPA1 will be under the electric current of the first inductance L The variation of drop is converted into voltage signal VSENSE1, VSENSE1=K1*IL*ROUT1, ROUT1For in the first operational amplifier (OPA1) The equivalent output impedance of afterbody;As VSENSE1=VC-Vhys, the electric current of the first inductance L reaches minimum value;Function at this time The electric signal control high side power PMOS tube shutdown of rate pipe Driver circuit output, low side power NMOS transistor conduction.

Claims (5)

1. a kind of control circuit of adaptive difference current mould, which is characterized in that including the first inductance, capacitor, first~third Resistance, high side power PMOS tube, low side power NMOS tube, adaptive error amplifier, current sampling circuit, hysteresis comparator, Pwm control logic circuit, power tube Driver circuit;The current sampling circuit includes the first current sampling circuit and the second electricity Stream sample circuit, current sampling circuit during first current sampling circuit is the conducting of high side power PMOS tube, described second Current sampling circuit during current sampling circuit is low side power NMOS transistor conduction, first current sampling circuit include first Operational amplifier;Second current sampling circuit includes second operational amplifier;
The capacitor latter end ground connection in parallel with 3rd resistor, other end is the output end of circuit;One end of first resistor point Do not connect with the drain electrode of the output end of circuit, high side power PMOS tube, other end respectively with one end of second resistance, adaptive The inverting input terminal of error amplifier connects;The other end of second resistance is grounded, the output of the adaptive error amplifier The inverting input terminal of end connection hysteresis comparator, the non-inverting input terminal of the hysteresis comparator connect the defeated of the first operational amplifier The output end of outlet and second operational amplifier;The inverting input terminal of first operational amplifier connects low side power NMOS tube Drain electrode, non-inverting input terminal connect high side power PMOS tube drain electrode;The non-inverting input terminal of the second operational amplifier connects The drain electrode of low side power NMOS tube, inverting input terminal connect the source electrode of low side power NMOS tube;The low side power NMOS tube Source electrode ground connection, drain electrode are connect with one end of the source electrode of high side power PMOS tube, the first inductance respectively;The hysteresis comparator it is defeated Outlet is connect with the input terminal of pwm control logic circuit;The output end of pwm control logic circuit and power tube Driver circuit Input terminal connection, the output end of power tube Driver circuit are separately connected the grid and low side power NMOS of low side power NMOS tube The grid of pipe.
2. a kind of control circuit of adaptive difference current mould according to claim 1, which is characterized in that described adaptive Error amplifier includes: the first~the 8th enhanced PMOS tube, the 4th resistance, the first~the 6th enhanced NMOS tube, third fortune Calculate amplifier, DC power supply;
The grid of the first enhanced PMOS tube and drain electrode are shorted, and connect the grid of the second enhanced PMOS tube, and described the The drain electrode of drain electrode the first enhanced NMOS tube of connection of one enhanced PMOS tube;The source electrode of first enhanced NMOS tube connects the second increasing The drain electrode of strong type NMOS tube, the source electrode ground connection of the second enhanced NMOS tube, the grid connection the of the first enhanced NMOS tube The output end of three operational amplifiers, the inverting input terminal of the third operational amplifier are separately connected the second enhanced NMOS tube The drain electrode of the enhanced PMOS tube of grid, third and the drain electrode of the enhanced NMOS tube of third;The same phase of the third operational amplifier Input terminal connects the grid of the enhanced NMOS tube of third and the grid of the 4th enhanced NMOS tube;The 4th enhanced NMOS tube Grid and the grid of the enhanced NMOS tube of third be all connected with bias voltage;The grid of the enhanced PMOS tube of third is should be certainly Adapt to the non-inverting input terminal of error amplifier;The enhanced PMOS tube source electrode of third connects one end of the 4th resistance and second and increases The drain electrode of strong type PMOS tube;The other end of 4th resistance connects the source electrode of the 4th enhanced PMOS tube and the 5th enhanced The drain electrode of NMOS tube;The grid of drain electrode the 5th enhanced NMOS tube of connection of the 4th enhanced PMOS tube and the 4th enhanced The drain electrode of NMOS tube;The grid of the 5th enhanced NMOS tube connects the grid of the 6th enhanced NMOS tube, and the described 6th increases The drain electrode of strong type NMOS tube is adaptive error amplifier out, and connects the drain electrode of the 8th enhanced PMOS tube and the 7th and increase The grid of strong type PMOS tube;The source electrode of the 7th enhanced PMOS tube connects the drain electrode of the 6th enhanced PMOS tube and the 8th and increases The grid of strong type PMOS tube;The grid of the 6th enhanced PMOS tube connects the grid of the 5th enhanced PMOS tube, and described the The drain electrode of five enhanced PMOS tube and grid are shorted, and are connect with the cathode of DC source;The source of the first enhanced PMOS tube Pole, the source electrode of the second enhanced PMOS tube, the source electrode of the 5th enhanced PMOS tube, the source electrode of the 6th enhanced PMOS tube, the 8th The source electrode of enhanced PMOS tube is connect with supply voltage VDD;It is the source electrode of the enhanced NMOS tube of third, the 4th enhanced The source electrode of NMOS tube, the source electrode of the 5th enhanced NMOS tube, the anode of DC source, the drain electrode of the 7th enhanced PMOS tube, the 6th The source electrode of enhanced PMOS tube is grounded.
3. a kind of control circuit of adaptive difference current mould according to claim 1, which is characterized in that first electricity Flowing sample circuit further includes the 9th enhanced PMOS tube, the 5th resistance;The source electrode and low side function of the 9th enhanced PMOS tube Drain electrode connection, the drain electrode of rate NMOS tube are connect with one end of the inverting input terminal of the first operational amplifier and the 5th resistance, grid It is connect with the grid of high side power PMOS tube, the other end of the 5th resistance and the non-inverting input terminal of the first operational amplifier connect It connects.
4. a kind of control circuit of adaptive difference current mould according to claim 1, which is characterized in that second electricity Flowing sample circuit further includes the seven, the eight enhanced NMOS tubes;The source electrode of the 7th enhanced NMOS tube connects low side power The drain electrode of NMOS tube;Drain electrode connection second operational amplifier non-inverting input terminal, the grid of the 7th enhanced NMOS tube and The grid of 8th enhanced NMOS tube is all connected with the grid of low side power NMOS tube;The drain electrode of the 8th enhanced NMOS tube connects Connect the inverting input terminal of second operational amplifier;The source electrode of source electrode connection low side power NMOS tube.
5. based on a kind of control method of the control circuit of adaptive difference current mould described in claim 1, which is characterized in that This method are as follows:
When the first inductive current rises, low side power NMOS transistor conduction, the shutdown of high side power PMOS tube, the electric current of the first inductance Ground terminal is flowed to by low side power NMOS tube, the variation that the electric current of the first inductance rises is converted into electricity by second operational amplifier Signal VSENSE2 is pressed, as VSENSE2=VC+Vhys, the electric current of the first inductance reaches maximum value;Power tube Driver at this time The electric signal control high side power PMOS tube conducting of circuit output, the shutdown of low side power NMOS tube;VC is adaptive error amplification Device output voltage;Vhys is the hysteresis voltage that hysteresis comparator itself generates;
When high side power PMOS tube is connected, and low side power NMOS tube turns off, the first inductance L passes through high side power PMOS tube to electricity Capacity charge, the electric current of the first inductance is gradually reduced at this time, and the variation that the first operational amplifier declines the electric current of the first inductance turns Change voltage signal VSENSE1 into, as VSENSE1=VC-Vhys, the electric current of the first inductance reaches minimum value;Power tube at this time The electric signal control high side power PMOS tube shutdown of Driver circuit output, low side power NMOS transistor conduction.
CN201910217323.9A 2019-03-21 2019-03-21 Control circuit and control method of self-adaptive differential current mode Active CN109921641B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910217323.9A CN109921641B (en) 2019-03-21 2019-03-21 Control circuit and control method of self-adaptive differential current mode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910217323.9A CN109921641B (en) 2019-03-21 2019-03-21 Control circuit and control method of self-adaptive differential current mode

Publications (2)

Publication Number Publication Date
CN109921641A true CN109921641A (en) 2019-06-21
CN109921641B CN109921641B (en) 2021-02-12

Family

ID=66966134

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910217323.9A Active CN109921641B (en) 2019-03-21 2019-03-21 Control circuit and control method of self-adaptive differential current mode

Country Status (1)

Country Link
CN (1) CN109921641B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111729192A (en) * 2020-06-16 2020-10-02 中南民族大学 Neural front end closed loop stimulation circuit
CN112803736A (en) * 2021-03-08 2021-05-14 江苏硅国微电子有限公司 Circuit and method for reducing output ripple of DC-DC converter
CN113849028A (en) * 2021-10-25 2021-12-28 杭州和利时自动化有限公司 Current output type AO circuit
CN114640247A (en) * 2022-04-26 2022-06-17 合肥工业大学 Full-period inductive current sampling circuit

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1763188A1 (en) * 2005-09-09 2007-03-14 Vrije Universiteit Brussel Multistage tuning-tolerant equalizer filter with detection mechanisms for lower and higher frequency gain loops
CN103179751A (en) * 2013-03-08 2013-06-26 上海晶丰明源半导体有限公司 LED driving circuit capable of realizing complete-period sampling of inductive current
CN103813587A (en) * 2014-01-22 2014-05-21 长安大学 LED drive circuit with digital-analog hybrid dimming function
CN105932875A (en) * 2016-05-09 2016-09-07 昌芯(西安)集成电路科技有限责任公司 Adaptive external synchronization DC/DC converter with PLL latch function
CN106549639A (en) * 2017-01-17 2017-03-29 桂林电子科技大学 A kind of gain-adaptive error amplifier
CN107104595A (en) * 2017-05-16 2017-08-29 电子科技大学 The self-adaptable slop compensation circuit of buck converter is controlled suitable for Peak Current Mode

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1763188A1 (en) * 2005-09-09 2007-03-14 Vrije Universiteit Brussel Multistage tuning-tolerant equalizer filter with detection mechanisms for lower and higher frequency gain loops
CN103179751A (en) * 2013-03-08 2013-06-26 上海晶丰明源半导体有限公司 LED driving circuit capable of realizing complete-period sampling of inductive current
CN103813587A (en) * 2014-01-22 2014-05-21 长安大学 LED drive circuit with digital-analog hybrid dimming function
CN105932875A (en) * 2016-05-09 2016-09-07 昌芯(西安)集成电路科技有限责任公司 Adaptive external synchronization DC/DC converter with PLL latch function
CN106549639A (en) * 2017-01-17 2017-03-29 桂林电子科技大学 A kind of gain-adaptive error amplifier
CN107104595A (en) * 2017-05-16 2017-08-29 电子科技大学 The self-adaptable slop compensation circuit of buck converter is controlled suitable for Peak Current Mode

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111729192A (en) * 2020-06-16 2020-10-02 中南民族大学 Neural front end closed loop stimulation circuit
CN112803736A (en) * 2021-03-08 2021-05-14 江苏硅国微电子有限公司 Circuit and method for reducing output ripple of DC-DC converter
CN112803736B (en) * 2021-03-08 2022-06-21 江苏硅国微电子有限公司 Circuit and method for reducing output ripple of DC-DC converter
CN113849028A (en) * 2021-10-25 2021-12-28 杭州和利时自动化有限公司 Current output type AO circuit
CN114640247A (en) * 2022-04-26 2022-06-17 合肥工业大学 Full-period inductive current sampling circuit
CN114640247B (en) * 2022-04-26 2024-03-29 合肥工业大学 Full-period inductive current sampling circuit

Also Published As

Publication number Publication date
CN109921641B (en) 2021-02-12

Similar Documents

Publication Publication Date Title
CN109921641A (en) A kind of control circuit and its control method of adaptive difference current mould
CN108445947B (en) Quick transient response circuit applied to DC-DC converter chip
CN109921639A (en) A kind of Buck converter based on the control of variable turn-on time
CN105517250A (en) LED (Light-emitting Diode) constant current drive system and constant current control circuit thereof
CN113067469B (en) Quick response loop compensation circuit, loop compensation chip and switching power supply
CN213934662U (en) Linear voltage stabilizing circuit without off-chip capacitor
CN112860002B (en) Instantaneous response linear voltage regulator
CN102411394A (en) Linear voltage stabilizer with low pressure differential and Sink and Source current capabilities
CN109101067A (en) A kind of low pressure difference linear voltage regulator of dual power rail
CN105848347B (en) Control circuit, control chip and the LED light emission device of current ripples can be eliminated
CN111313704A (en) PWM comparator for controlling BUCK converter with forced continuous mode COT
CN103631299A (en) Constant-differential-pressure and variable-output-voltage low dropout regulator
WO2022041592A1 (en) Self-excited push-pull circuit and auxiliary power supply method therefor
CN114204805A (en) Power rail circuit for high-voltage Buck converter
CN110399003A (en) A kind of opposite negative supply rail and opposite positive supply rail generation circuit
US20230344328A1 (en) Current sampling circuit and multi-level converter
CN114640247B (en) Full-period inductive current sampling circuit
CN110908427A (en) Current-limiting protection circuit applied to high-voltage linear voltage stabilizer
CN113970949B (en) High-speed linear voltage stabilizer with quick response
CN113741609B (en) LDO circuit with adjustable output voltage and quick transient response
CN109769323A (en) A kind of LED drive circuit and control method
CN208141252U (en) A kind of fast transient response circuit applied to DC-DC converter chip
CN114895743A (en) Low starting current circuit for dynamic bias current LDO
CN211207200U (en) High power supply rejection ratio reference circuit
CN114465305A (en) Self-adaptive multi-segment rapid capacitor discharging method and discharging circuit

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant