CN109920939A - Prepare solvent, method and the application of high-performance metal halide perovskite thin film - Google Patents
Prepare solvent, method and the application of high-performance metal halide perovskite thin film Download PDFInfo
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- CN109920939A CN109920939A CN201910103268.0A CN201910103268A CN109920939A CN 109920939 A CN109920939 A CN 109920939A CN 201910103268 A CN201910103268 A CN 201910103268A CN 109920939 A CN109920939 A CN 109920939A
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- thin film
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- perovskite thin
- halide perovskite
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
A kind of solvent preparing high-performance metal halide perovskite thin film, method and application, belong to microelectronics technology.The solvent for preparing high-performance metal halide perovskite thin film includes 3 parts of DMF and 1~2 part of GBL by volume parts.The present invention can effectively regulate and control the pattern of perovskite thin film, improve the performance, efficiency and stability of device；Have the characteristics that method is simple, low in cost, controllability is strong for industrialized production.
Description
Technical field
It is specifically a kind of to prepare high-performance metal halide calcium titanium the present invention relates to a kind of technology of microelectronic field
Solvent, method and the application of mine film.
Background technique
In recent years, metal halogen perovskite thin film is due to its excellent photoelectric properties, cheap cost, easy preparation work
The advantages such as skill are by worldwide extensive concern.From initial three-dimensional perovskite structure, formed to current element numerous
The various structures such as one-dimensional, two-dimentional perovskite quantum dot, nano wire, nano-plates, the application of perovskite material is also from solar battery
Expand to laser emitter, light emitting diode, thermo-electric device, the various aspects such as photodetector.Device based on perovskite thin film
Part not only has the high-performance to attract people's attention, but also low in cost, and production and processing technology is easy, therefore has very much extensive work
The potentiality of industry.
Although the preparation of perovskite device and property development are rapid, film quality remains device performance and reliability
Most important restraining factors.In order to obtain high performance perovskite device, people have found on the basis of solution one-step method in recent years
The preparation process and method of many effective perovskite thin films, including solution two step method, anti-solvent rapid crystallization method are molten
Liquid method+vapor phase method and vacuum double source gas phase synthesis method etc..Solution one-step technology is simple but the perovskite thin film that is prepared
Quality is general, although and the true quality and repeatability for improving perovskite thin film of other methods, complex process cause to be produced into
Originally it greatly improves, thus is unfavorable for the development and commercialization of perovskite device.
Summary of the invention
The present invention In view of the above shortcomings of the prior art, proposes and a kind of prepares high-performance metal halide perovskite
Solvent, method and the application of film.
The present invention is achieved by the following technical solutions:
The present invention relates to a kind of solvents for preparing high-performance metal halide perovskite thin film, include 3 parts by volume parts
DMF and 1~2 part of GBL.
Preferably, the volume ratio of DMF and GBL is 6.5:3.5.
The present invention relates to a kind of methods for preparing high-performance metal halide perovskite thin film, comprising the following steps:
S1, preparation that perovskite precursor solution arrives:
By at least one raw material A X and at least one raw material BY2It is added in aforementioned solvents, room temperature or heating stirring are configured to
Metal halide perovskite precursor solution；
S2, the preparation of perovskite thin film:
In glove box or in air, by the methods of spin coating or printing by step S1Metal halide perovskite obtained
In precursor solution uniform load to substrate, heating anneal is cooled to room temperature after crystallization, obtains high-performance metal halide calcium
Titanium ore film.
Group A is positive univalent perssad in raw material A X, is selected from NH2- CH=NH2 +、R1NH3 +, in positive monovalent metal cation
Any one；X is negative univalent anion, is selected from I-、Br-、Cl-、SCN-、NCS-、NO3 -、R2COO-In any one；R1And R2Point
It Wei not any one alkane, alkene, alkynes or aromatic hydrocarbon group.
Raw material BY2Middle B is positive divalent metal；Y is negative univalent anion, is selected from I-、Br-、Cl-、SCN-、NCS-、
NO3 -、R3COO-In any one；R3For any one alkane, alkene, alkynes or aromatic hydrocarbon group.
Heating anneal be under normal pressure or reduced pressure using the heating techniques such as heating plate, baking oven baking, thermal current, microwave into
Row heating.
Annealing temperature is 50~150 DEG C, and annealing time is 0.5~100min.
Substrate is any flexible or rigid substrate, it is preferred to use conductive substrates.
The present invention relates to a kind of high-performance metal halide perovskite thin films, are prepared using the above method.
Technical effect
Compared with prior art, the present invention has the following technical effect that
1) perovskite precursor solution is prepared using DMF-GBL mixed solvent, can be used for one-dimensional perovskite quantum dot, two dimension
The preparation of the materials such as perovskite quantum dot, nano wire, nano-plates；It overcomes and the preparing metal halogenation of DMF or GBL solvent is used alone
Object perovskite precursor solution is preparing defect present in metal halide perovskite thin film；Use DMF-GBL mixed solvent
Prepare perovskite precursor solution, the solvation intermediate that perovskite raw material is formed in perovskite precursor solution process for preparation
Solubility is moderate, and solvent volatility is appropriate, and in high speed spin coating process, solvation intermediate occurs quickly and uniformly to crystallize,
And annealing process is easy manipulation, so that the coverage rate of perovskite thin film, flatness and crystallinity are all improved, reaches
Improve the effect of perovskite thin film quality and device performance；
2) easy to operate, it is reproducible, it is at low cost；
3) the high-performance metal halide perovskite thin film prepared can be used for solar battery, laser emitter, luminous two
In the devices such as pole pipe, thermo-electric device and photodetector.
Detailed description of the invention
Fig. 1 a is the SEM figure for the perovskite thin film being prepared based on solvent DMF；
Fig. 1 b is the SEM figure based on the solvent GBL perovskite thin film being prepared；
Fig. 1 c is the SEM figure for the perovskite thin film being prepared based on DMF/GBL mixed solvent in embodiment 1；
Fig. 2 is the UV-Vis spectra figure for the perovskite thin film being prepared based on different proportion DMF and GBL solvent；
Fig. 3 is perovskite solar battery PIN structural schematic diagram.
Specific embodiment
With reference to the accompanying drawing and specific embodiment the present invention will be described in detail.
Embodiment 1
DMF and GBL is the quite different organic solvent of two kinds of property.The relatively low boiling point of DMF is 153 DEG C, and polarity is larger
For 6.40D, it is all very strong to form hydrogen bond and the ability being coordinated with metal.The relatively high boiling point of GBL is 204 DEG C, and polarity is smaller
For 4.12D, hydrogen bond can be formed, but opposite with the coordination ability of metal very weak.The quality of perovskite thin film directly depends on molten
Interaction between agent type, the property of solvation intermediate, solvent and solvation intermediate, and above two solvent is independent
Prepare equal existing defects when perovskite thin film.
The present embodiment has carried out scanning electricity to perovskite thin film prepared by different solvents ratio perovskite precursor solution
Sub- microscope (SEM) and UV-Vis spectra analysis (UV-Vis).As shown in Fig. 1 a, Fig. 1 b and Fig. 1 c stereoscan photograph,
Compared to using pure DMF and GBL as perovskite thin film made by solvent, the DMF and GBL that volume ratio is 6.5:3.5 are mixed
Solvent perovskite thin film produced is obviously improved on crystalline size and film morphology.In addition, purple according to Fig.2,
Outside-visible light, DMF the and GBL mixed solvent perovskite thin film produced that volume ratio is 6.5:3.5 have good peak shape
And intensity, illustrate that this method can be obtained with pattern is excellent and the biggish perovskite thin film of crystalline size, this result and scanning electricity
Mirror, cell photoelectric performance conclusion are consistent.
Based on mixed solvent in the present invention, using the solar battery of solution one-step method assembling plane flip structure, such as Fig. 3
It is shown, including conductive substrates 1, hole transmission layer 2, perovskite thin film layer 3, electron transfer layer 4 and the top electrode 5 being stacked.
Compare shadow of the obtained perovskite thin film of mixed solvent to the efficiency of perovskite solar battery of different compositions
It rings, cell photoelectric performance parameter statistics is as shown in table 1 (acquisition of all data is based at least eight independent battery), compared to pure
DMF (average efficiency 8.082%) or GBL (average efficiency 8.601%) make solvent, use the mixed solvent of DMF and GBL
Perovskite thin film is prepared to have clear improvement to battery performance, and when the volume ratio of DMF and GBL be 6.5:3.5 when battery performance most
Good, average efficiency 11.251% improves 39.21% using DMF solvent compared to independent；It is molten using GBL compared to individually
Agent improves 30.81%.It can be seen that mixed solvent improved significantly by the improvement to perovskite thin film quality it is cell performance
Energy.In addition, experiment is it is also shown that compare separate solvent, the repeatability of perovskite solar battery obtained by mixed solvent also has
It significantly improves.
The photoelectric properties parameter of 1 perovskite solar battery of table
It is emphasized that: the above is only presently preferred embodiments of the present invention, not make in any form to the present invention
Limitation, any simple modification, equivalent change and modification to the above embodiments according to the technical essence of the invention,
All of which are still within the scope of the technical scheme of the invention.
Claims (6)
1. a kind of solvent for preparing high-performance metal halide perovskite thin film, which is characterized in that by volume parts including 3 parts
DMF and 1~2 part of GBL.
2. a kind of method for preparing high-performance metal halide perovskite thin film, which comprises the following steps:
S1, preparation that perovskite precursor solution arrives:
By at least one raw material A X and at least one raw material BY2It is added in solvent described in claim 1, room temperature or heating stirring are matched
Metal halide perovskite precursor solution is made；
S2, the preparation of perovskite thin film:
In glove box or in air, by step S1Metal halide perovskite precursor solution uniform load obtained is to substrate
On, heating anneal is cooled to room temperature after crystallization, obtains high-performance metal halide perovskite thin film.
3. preparing the method for high-performance metal halide perovskite thin film according to claim 2, characterized in that the raw material
Group A is positive univalent perssad in AX, is selected from NH2- CH=NH2 +、R1NH3 +, any one in positive monovalent metal cation；X is
Negative univalent anion is selected from I-、Br-、Cl-、SCN-、NCS-、NO3 -、R2COO-In any one；R1And R2Respectively any one
Alkane, alkene, alkynes or aromatic hydrocarbon group.
4. preparing the method for high-performance metal halide perovskite thin film according to claim 2, characterized in that the raw material
BY2Middle B is positive divalent metal；Y is negative univalent anion, is selected from I-、Br-、Cl-、SCN-、NCS-、NO3 -、R3COO-In
Any one；R3For any one alkane, alkene, alkynes or aromatic hydrocarbon group.
5. a kind of high-performance metal halide perovskite thin film, which is characterized in that wanted using solvent described in claim 1 or right
Any one of 2-4 the method is asked to be prepared.
6. a kind of solar battery, which is characterized in that including high-performance metal halide perovskite thin film described in claim 5.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114315165A (en) * | 2021-11-17 | 2022-04-12 | 无锡极电光能科技有限公司 | Colored perovskite glaze glass, preparation method thereof and solar cell |
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| CN106637403A (en) * | 2016-11-28 | 2017-05-10 | 华中科技大学 | Preparation method of perovskite single crystals |
| CN107683352A (en) * | 2015-03-24 | 2018-02-09 | 阿卜杜拉国王科技大学 | The method for preparing organic metal halide structure |
| CN108026445A (en) * | 2016-08-11 | 2018-05-11 | 凡泰姆股份公司 | Luminescent crystal and its manufacture |
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| CN107683352A (en) * | 2015-03-24 | 2018-02-09 | 阿卜杜拉国王科技大学 | The method for preparing organic metal halide structure |
| CN108026445A (en) * | 2016-08-11 | 2018-05-11 | 凡泰姆股份公司 | Luminescent crystal and its manufacture |
| CN106637403A (en) * | 2016-11-28 | 2017-05-10 | 华中科技大学 | Preparation method of perovskite single crystals |
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|---|---|---|---|---|
| CN114315165A (en) * | 2021-11-17 | 2022-04-12 | 无锡极电光能科技有限公司 | Colored perovskite glaze glass, preparation method thereof and solar cell |
| CN114315165B (en) * | 2021-11-17 | 2023-12-26 | 无锡极电光能科技有限公司 | Colored perovskite glaze glass, preparation method thereof and solar cell |
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