CN109917502A - A kind of two-dimensional grating structure and its manufacturing method - Google Patents
A kind of two-dimensional grating structure and its manufacturing method Download PDFInfo
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Abstract
The invention discloses a kind of two-dimensional grating structures, it from bottom to top include: substrate, hanging layer and optical grating construction, the optical grating construction are symmetry or asymmetry array made of being arranged as multiple two-dimensional grating figures with some cycles, and the support construction of array-like is correspondingly provided in the hanging layer；Wherein, each support construction lower end is connected on the substrate, and upper end is correspondingly connected with a two-dimensional grating figure bottom surface, and the optical grating construction is made to be in vacant state.The present invention passes through process flow and the appropriate adjustment of design configuration, form hanging two-dimensional grating, refractive index contrast structure with higher, i.e. the grating material of high refractive index is surrounded by the material of low-refraction, thus it can optimize grating performance, the optical characteristics that high reflectance is realized in wider wave-length coverage, reduces the sensibility to light wave polarization state.The invention also discloses a kind of manufacturing methods of two-dimensional grating structure.
Description
Technical field
The present invention relates to the technical field of micro-nano manufacture of optical texture, more particularly, to a kind of two-dimensional grating structure and
Its manufacturing method.
Background technique
Diffraction grating is a kind of diffraction optical element, and electromagnetic characteristics of such device based on light pass through aligned transfer
Space structure is modulated the amplitude of incident light, phase by periodic spatial, the direction of propagation, the polarization state, phase of light is controlled with this
The characteristics such as stemness and power distribution.
With the progress of micro-nano technology technology, the response wave length of diffraction grating reduces increasingly, has currently reached nanometer scale, by
This improves the technical performances such as bandwidth, diffraction efficiency, wavelength and incidence angle sensibility, its application field has more been widened, narrow
Band filter, low power consumption switch element, reflecting mirror etc. have important application value.
The structure of height comparison grating is hanging single layer optical grating construction, light from the optical grating construction evolution of multilayer material
The upper and lower level of grid structure uses air as low-index material, and refractive index difference makes the device architecture have stronger limit to light wave
Production is used, and helps to optimize the optical properties such as bandwidth, reflectivity.Conventional grating is one-dimentional structure, by wide flat at equal intervals
Row slit is constituted, which has sensibility to the polarization state of light wave；Two-dimensional structure is such as used, then device pair can be greatly reduced
The sensitivity of optical polarization.
In existing research, the research about two-dimensional grating structure is less, is mostly directed to two-dimensional grating related optical performance
Measurement, simulation etc. research, or be related to the practical application of two-dimensional grating.The United States Patent (USP) of Patent No. 6833914 mentions
The method that a kind of pair of two-dimensional grating structure carries out reflex response simulation, improvement of the invention by systems approach, Ke Yigeng are gone out
For accurately simulated optical reflex response.But the patent is not related to the specific structure and manufacturing process of two-dimensional grating.
Therefore, it to realize hanging two-dimensional grating structure, needs to propose a kind of with practical in conjunction with conventional manufacturing process
Feasibility and the controllable processing and manufacturing technology of device performance.
Summary of the invention
It is an object of the invention to overcome drawbacks described above of the existing technology, a kind of two-dimensional grating structure and its system are provided
Make method.
To achieve the above object, technical scheme is as follows:
A kind of two-dimensional grating structure includes: substrate from bottom to top, and hanging layer and optical grating construction, the optical grating construction are served as reasons
Symmetry made of multiple two-dimensional grating figures are arranged with some cycles or asymmetry array are correspondingly provided in the hanging layer
The support construction of array-like；Wherein, each support construction lower end is connected on the substrate, and upper end is correspondingly connected with one
Two-dimensional grating figure bottom surface makes the optical grating construction be in vacant state.
Further, the support construction is cylindricality, and support is located in the middle part of the bottom surface of the two-dimensional grating figure, described
The gas medium that rate is refracted around two-dimensional grating figure lower than raster graphic structural material is surrounded.
Further, the periodic regime of the optical grating construction is 300~800nm, and duty cycle range is 0.5~0.8, thickness
Range is 230~290nm.
Further, each two-dimensional grating figure is equal-sized square, and presses ranks orthogonal arrangement；Alternatively,
Each two-dimensional grating figure is alternately arranged square column/row and rectangle column/row, and the arrangement of each rectangle column/row
Direction is consistent.
Further, the optical grating construction material is polysilicon, and the support construction material is silica, amorphous silicon
Or polysilicon.
A kind of manufacturing method of two-dimensional grating structure, comprising the following steps:
Step S010: providing a substrate, forms buffer layer and thin film sacrificial layer over the substrate；
Step S020: being patterned the sacrificial layer, forms the array-like through-hole structure for penetrating through the sacrificial layer；
Step S030: filled media in the through hole forms the support construction of array-like；
Step S040: grate film is formed in the sacrificial layer surface；
Step S050: being patterned the grate film, forms the two-dimentional light for being correspondingly connected with each support construction
The symmetry or asymmetry array of gate figure；
Step S060: removing the sacrificial layer material, forms hanging layer over the substrate, and in vacant state
The two-dimensional grating structure arranged with some cycles.
Further, in step S010, the substrate is silicon wafer or glass substrate；The buffer layer is silica and nitrogen
The lamination of SiClx, wherein the silicon dioxide layer is formed using thermal oxide, using plasma enhances chemical vapor deposition manner
Form the silicon nitride layer；The sacrificial layer is APF film, and using plasma enhancing chemical vapor deposition manner is formed.
Further, in step S030, using plasma enhances chemical vapor deposition, high-density plasma chemical gas
Mutually one or a combination set of deposition and flowable chemical gas-phase deposition fill silica or amorphous in the through hole
Silicon forms the silica or amorphous silicon support construction of array-like, and uses cmp planarization chemical industry skill, will be overlying on the sacrifice
The silica or amorphous si film of layer surface remove；In step S040, using plasma enhances chemical vapor deposition side
Formula forms polysilicon grate film in the sacrificial layer surface.
Further, in step S030 and step S040, using high density plasma CVD mode, in institute
It states and fills polysilicon in through-hole, form the polysilicon support construction of array-like；Then, continue to deposit in the sacrificial layer surface more
Crystal silicon grate film, and the polysilicon grate film is planarized using CMP process.
Further, in step S050, when being patterned to the grate film, make each two-dimensional grating to be formed
Figure is equal-sized square, and presses the equidistant orthogonal arrangement of ranks；Alternatively, making each two-dimensional grating figure to be formed
Alternately arranged square column/row and rectangle column/row, and the orientation of each rectangle column/row is consistent.
It can be seen from the above technical proposal that the present invention is formed outstanding by process flow and the appropriate adjustment of design configuration
Empty two-dimensional grating, refractive index contrast structure with higher, the i.e. grating material of high refractive index are by the material institute of low-refraction
It surrounds, thus can optimize grating performance, the optical characteristics of high reflectance is realized in wider wave-length coverage, reduce and light wave is polarized
The sensibility of state.
Detailed description of the invention
Fig. 1 is a kind of two-dimensional grating structure schematic diagram of a preferred embodiment of the present invention.
Fig. 2 is a kind of two-dimensional grating pattern arrangement schematic diagram of a preferred embodiment of the present invention.
Fig. 3 is a kind of two-dimensional grating pattern arrangement schematic diagram of another preferred embodiment of the present invention.
Fig. 4 is a kind of manufacturing method flow chart of two-dimensional grating structure of the present invention.
Fig. 5-Figure 10 is the processing step schematic diagram that a kind of two-dimensional grating structure is manufactured according to the method for Fig. 4.
Specific embodiment
Two-dimensional grating structure provided by the invention is a kind of novel hanging structure, can be flat in conjunction with conventional MEMS technology
Hanging structure is realized in the dimension of face, forms the optical grating construction of symmetry or asymmetry figure.
The core concept of two-dimensional grating structure involved by the present invention and manufacturing process is, passes through process flow and design drawing
The appropriate adjustment of shape forms hanging two-dimensional grating, refractive index contrast structure with higher, the i.e. grating material of high refractive index
It is surrounded by the material of low-refraction, thus can optimize grating performance, the optics of high reflectance is realized in wider wave-length coverage
Characteristic.
With reference to the accompanying drawing, specific embodiments of the present invention will be described in further detail.
It should be noted that in following specific embodiments, when describing embodiments of the invention in detail, in order to clear
Ground indicates structure of the invention in order to illustrate, spy does not draw to the structure in attached drawing according to general proportion, and has carried out part
Amplification, deformation and simplified processing, therefore, should be avoided in this, as limitation of the invention to understand.
In specific embodiment of the invention below, referring to FIG. 1, Fig. 1 is one kind of a preferred embodiment of the present invention
Two-dimensional grating structure schematic diagram.As shown in Figure 1, a kind of two-dimensional grating structure of the invention, includes: substrate 100 from bottom to top, branch
Support the optical grating construction 400 ' on substrate 100, and the support construction 350 between substrate 100 and optical grating construction 400 '.
Please refer to Fig. 1.Silicon wafer or glass material can be selected in substrate 100, is and semiconductor technology compatibility, the present embodiment are selected
Silicon substrate.Buffer layer film layer can be also further formed on silicon substrate 100；Buffer layer can use composite lamainated structure.For example,
Buffer layer may include SiO2With two layers of SiN of lamination；This double-layer films can be with silicon substrate 100 together as integral device structure
Substrate.
Optical grating construction 400 ' includes multiple two-dimensional grating figures；These two-dimensional grating figures are arranged with some cycles,
And forming symmetry or asymmetry array, i.e., optical grating construction 400 ' is that one kind is repeated to arrange by two-dimensional grating figure with some cycles
Column are formed by symmetry or asymmetry array.Optical grating construction 400 ' (please refers to Figure 10 to be managed by support construction 350
Solution) it is arranged on substrate, so that optical grating construction 400 ' is vacantly located at 100 top of substrate.
Support construction 350 is arranged in hanging layer.Support construction 350 includes multiple column constructions, such as can be using circle
Column cross-section structure.The quantity of cylinder and the quantity of two-dimensional grating figure correspond, thus support construction 350 is also to be arranged as
Array-like.The size of cylinder is advisable with the necessary support strength for being capable of providing to two-dimensional grating figure.Each cylindrical support
The lower end of structure is connected on silicon substrate 100, or may also set up on the buffer layer；The upper end of cylindrical support structure is corresponding
It is connected on the bottom surface of a two-dimensional grating figure, and the medium position of bottom surface can be located at, make each of optical grating construction 400 '
Two-dimensional grating figure is all in vacant state.
Please refer to Fig. 1.It can be filled with gas medium in hanging layer, i.e., hanging layer is made of gas.In this way, in two dimension
It is just surrounded by gas medium around raster graphic.For example, the air etc. of low-refraction, grating material can be used in dielectric gas
The polysilicon etc. of high refractive index can be used.Since the refractive index of air is 1, and the refractive index n of polysilicon is about 3.45, so that it may shape
It at high refractive index contrast optical grating construction, surrounds high refractive index grating 400 ' by low-refraction gas material, can have higher
Bandwidth and reflectivity, be obviously improved to have to the optical property of device.
Silica, amorphous silicon or polysilicon can be used in support construction material.When the use of support construction material and grating
When the identical polysilicon of material, support construction 350 is structure as a whole with grating 400 ', so as to be effectively improved device architecture
Mechanical stability.
The structural parameters of grating 400 ' have decisive role to optical property, mainly using theoretical calculation and Numerical-Mode
Quasi- method determines.Wherein, as shown in Figures 2 and 3, grating periodic regime (certain a line of i.e. one two-dimensional grating figure with
The distance between the corresponding sides of another adjacent two-dimensional grating figure P) it can be chosen for 300~800nm, the present embodiment is preferably
800nm；Duty ratio=raster size/screen periods, range can be 0.5~0.8, and the present embodiment is preferably 0.5.
It is used as an optional embodiment as a result, the planar structure parameter of grating can be identified as: screen periods 800nm；Light
Grid size 400nm (square).Meanwhile grating thickness (i.e. the structure height H of two-dimensional grating figure) range can for 230~
290nm, preferably 250nm.In this way, the optical grating construction 400 ' in the present embodiment is multiple square rod structures, i.e., each two-dimentional light
Gate figure is equal-sized square, and presses ranks orthogonal arrangement, and structural schematic diagram and two-dimensional arrangements can be as shown in Figure 2.
By the determination to above-mentioned data, the two-dimensional grating of symmetry can be formed.
As another optional embodiment, the planar graph of two-dimensional grating can be adjusted centainly, screen periods are still
Preferably 800nm.Wherein, duty ratio still maintains former numerical value 0.5 on a dimension (the vertical y-axis direction of example)；At another
In dimension (the horizontal x-axis direction of example), dynamic adjustment is carried out to the actual range of duty ratio, is set as 0.5~0.6, the present embodiment is excellent
It is selected as 0.5,0.6 two discrete value.Raster shape is rectangular or square as a result, in the x direction its raster size/grating
Interval be respectively 400nm/400nm and 480nm/320nm, i.e., each two-dimensional grating figure be alternately arranged sequence of squares (row) and
Rectangle arranges (row), and the orientation of each rectangle column (row) is consistent, and two-dimentional grating alignment schematic diagram is as shown in Figure 3.It is logical
Above-mentioned adjustment is crossed, the two-dimensional grating of asymmetry can be formed, to meet the optical characteristics demand of component variations.
Below by way of specific embodiment and attached drawing, a kind of manufacturing method of two-dimensional grating structure of the invention is carried out detailed
It describes in detail bright.
Referring to Fig. 4, Fig. 4 is a kind of manufacturing method flow chart of two-dimensional grating structure of the present invention；Meanwhile please referring to Fig. 5-
Figure 10, Fig. 5-Figure 10 are the processing step schematic diagrames that a kind of two-dimensional grating structure is manufactured according to the method for Fig. 4.As shown in figure 4, this
A kind of manufacturing method of two-dimensional grating structure of invention, can be used for manufacturing the two-dimensional grating structure of above-mentioned Fig. 1-Fig. 3, and may include
Following steps:
Step S010: a substrate is provided, buffer layer and thin film sacrificial layer is formed on the substrate.
Firstly, as shown in figure 5, silicon wafer or glass can be selected as substrate material.For with semiconductor technology compatibility, this implementation
Example selects silicon substrate.Buffering film layer 200 and 250 is formed on silicon substrate 100, such as may include SiO2With SiN double-layer structure.Its
In, SiO2Film 200 can be used thermal oxide and be formed, and thickness can bePreferablySiN film 250 can
Using plasma enhancing chemical vapor deposition (PECVD) mode is formed, with a thickness ofPreferably
With the substrate of this double-layer films 200 and 250 device architecture as a whole, continue deposited sacrificial layer film on it
300.APF film can be selected in sacrificial layer, and is formed using PECVD mode, and thickness can bePreferablyThe deposition thickness of the thin film sacrificial layer 300 has determined the height of subsequent hanging structure.
Step S020: being patterned sacrificial layer, forms the array-like through-hole structure of perforation sacrificial layer.
Then, as shown in fig. 6, being patterned to thin film sacrificial layer 300, the shape in patterned thin film sacrificial layer 300 '
At the through-hole structure of the array configuration of support construction.Wherein patterning process is the semiconductors Conventional process steps such as photoetching, etching,
Details are not described herein.
The figure that this road technique is formed is through the through-hole structure of thin film sacrificial layer, terminates at buffering film layer 250 or 200.
The present embodiment selects the support construction of cylindrical structure, i.e. through-hole is cylinder, a diameter of 80~120nm, preferably 100nm.
The final support construction shape and size of structure determination that this road technique is formed, needs to have preferable mechanical property to light
Grid structure provides effectively support, avoids interfering device optical performance again.
Step S030: filled media in through-holes forms the support construction of array-like.
Then, as shown in fig. 7, filled media and being planarized in the through-hole of above-mentioned support construction.The medium of filling
It can be SiO2, a-Si (amorphous silicon) or polysilicon, the present embodiment chooses SiO2。SiO2Such as plasma can be used in medium 350
Body enhancing chemical vapor deposition (PECVD), high density plasma CVD (HDPCVD), flowable chemical gas phase are heavy
Suitable depositing operation such as product (FCVD) or combinations thereof is formed.The present embodiment need to carry out media filler in column structure, preferably
For FCVD, the dielectric material which forms is flowable, preferable to the filling capacity of high aspect ratio structure, Gu annealing/
After changing step, packing material translates into solid-state.
After completing media filler, part SiO2Film is covered in device architecture surface, needs using flat chemical industry such as CMP
Skill will be overlying on the SiO on surface2Film removal, guarantees the final hanging structure high consistency of device.Through-hole after filled media
Form the support construction 350 of array-like.
Step S040: grate film is formed in sacrificial layer surface.
Thereafter, as shown in figure 8, forming optical grating construction film layer 400.To form high refractive index contrast structure, grate film
400 need to select the material of high refractive index.The grating material of the present embodiment is preferably polysilicon, and refractive index n is about 3.45, with sky
Gas refractive index 1 has larger difference.Grate film 400 can be used PECVD mode and be formed, film thickness range be 230~
290nm, preferably 250nm.In this road technique, needs to adjust Polysilicon film deposition technique, make itself and APF, SiO2Have
Standby good adhesiveness, so as to the progress of subsequent technique.
It as another optional embodiment, can slightly adjust on the basis of the above embodiments, by step S030 and step
Rapid S040 merges into a processing step, concretely: the cylinder material of support construction and optical grating construction material being selected as more
Crystal silicon, and support construction is formed in a processing step using high density plasma CVD (HDPCVD) mode
And grate film, i.e., polysilicon is first filled in through-holes, form the polysilicon support construction 350 of array-like；Then, continue sacrificial
Domestic animal layer surface deposit polycrystalline silicon grating film 400.And then polysilicon grate film 400 is carried out using CMP process flat
Change, guarantees the uniformity of optical grating construction film thickness.Above-mentioned technique adjustment passes through a shape of support column and grate film material
At avoiding existing adhesion issues between different materials, the mechanical stability of device architecture can be effectively improved.
Step S050: being patterned grate film, forms the two-dimensional grating figure for being correspondingly connected with each support construction
Symmetry or asymmetry array.
Later, as shown in figure 9, being patterned to optical grating construction film layer 400, the two-dimentional battle array of optical grating construction 400 ' is formed
Column.After this road technique, optical grating construction 400 ' has been formed, and exposes the thin film sacrificial layer under it in grating spacings region
300’。
It, can be as shown in Fig. 2, forming the grating of square, side length using layout design as an optional embodiment
For 400nm, grating spacings size is also 400nm.
Alternatively, as another optional embodiment, it can be as shown in figure 3, using layout design, to the plane of two-dimensional grating
Figure is centainly adjusted, and screen periods are still preferably 800nm；In a dimension, (duty ratio maintains former numerical value 0.5 on example y)；
(the actual range dynamic of example x), duty ratio adjust, and are set as 0.5~0.6, the present embodiment is preferably in another dimension
0.5,0.6 two discrete values；Raster shape is rectangle or square, in the x direction its raster size/grating spacings as a result,
Respectively 400nm/400nm, 480nm/320nm.
Step S060: hanging layer is formed on the substrate in removal sacrificial layer material, and in vacant state with certain week
The two-dimensional grating structure of phase arrangement.
Finally, as shown in Figure 10, removing sacrificial layer 300 ' to form hanging two-dimensional grating structure 400 '.Due to this implementation
The sacrificial layer material that example is selected is APF, and degumming process can be used and all remove the sacrificial layer 300 ' below optical grating construction 400 ',
Utilize the SiO left2(or polysilicon) support column arrangement 350 realizes mechanical support.So far, hanging two-dimensional grating structure 400 '
Just formed.
In conclusion appropriate adjustment of the present invention by process flow and design configuration, the hanging of symmetrical structure is formed
The grating of two-dimension square column type grating or other X-Y schemes, refractive index contrast structure with higher, i.e. high refractive index
Grating material is surrounded by the material of low-refraction, thus can optimize grating performance, realizes high reflection in wider wave-length coverage
The optical characteristics of rate, compares one-dimensional grating, can reduce the sensibility to light wave polarization state, realizes in wider wave-length coverage high
The optical characteristics of reflectivity, therefore the optical property of device is obviously improved.
The above is only a preferred embodiment of the present invention, the scope of patent protection that embodiment is not intended to limit the invention, because
This is all with the variation of equivalent structure made by specification and accompanying drawing content of the invention, similarly should be included in guarantor of the invention
It protects in range.
Claims (10)
1. a kind of two-dimensional grating structure, which is characterized in that it from bottom to top include: substrate, hanging layer and optical grating construction, the grating
Structure is symmetry or asymmetry array made of being arranged as multiple two-dimensional grating figures with some cycles, in the hanging layer
It is correspondingly provided with the support construction of array-like；Wherein, each support construction lower end is connected on the substrate, and upper end is corresponding
A two-dimensional grating figure bottom surface is connected, the optical grating construction is made to be in vacant state.
2. two-dimensional grating structure according to claim 1, which is characterized in that the support construction is cylindricality, support level
In the middle part of the bottom surface of the two-dimensional grating figure, rate is refracted around the two-dimensional grating figure lower than raster graphic structural wood
The gas medium of material is surrounded.
3. two-dimensional grating structure according to claim 1, which is characterized in that the periodic regime of the optical grating construction is 300
~800nm, duty cycle range are 0.5~0.8, and thickness range is 230~290nm.
4. two-dimensional grating structure according to claim 1 or 3, which is characterized in that each two-dimensional grating figure is size
Equal square, and press ranks orthogonal arrangement；Alternatively, each two-dimensional grating figure is alternately arranged square column/row
With rectangle column/row, and the orientation of each rectangle column/row is consistent.
5. two-dimensional grating structure according to claim 1, which is characterized in that the optical grating construction material is polysilicon, institute
Stating support construction material is silica, amorphous silicon or polysilicon.
6. a kind of manufacturing method of two-dimensional grating structure, which comprises the following steps:
Step S010: providing a substrate, forms buffer layer and thin film sacrificial layer over the substrate；
Step S020: being patterned the sacrificial layer, forms the array-like through-hole structure for penetrating through the sacrificial layer；
Step S030: filled media in the through hole forms the support construction of array-like；
Step S040: grate film is formed in the sacrificial layer surface；
Step S050: being patterned the grate film, forms the two-dimensional grating figure for being correspondingly connected with each support construction
The symmetry or asymmetry array of shape；
Step S060: removing the sacrificial layer material, forms hanging layer over the substrate, and in vacant state with one
The two-dimensional grating structure of fixed cycle arrangement.
7. the manufacturing method of two-dimensional grating structure according to claim 6, which is characterized in that in step S010, the lining
Bottom is silicon wafer or glass substrate；The buffer layer is the lamination of silica and silicon nitride, wherein is formed using thermal oxide described
Silicon dioxide layer, using plasma enhancing chemical vapor deposition manner form the silicon nitride layer；The sacrificial layer is that APF is thin
Film, using plasma enhancing chemical vapor deposition manner are formed.
8. the manufacturing method of two-dimensional grating structure according to claim 6, which is characterized in that in step S030, using etc.
Gas ions enhance one of chemical vapor deposition, high density plasma CVD and flowable chemical gas-phase deposition
Or combinations thereof, silica or amorphous silicon are filled in the through hole, form the silica or amorphous silicon branch of array-like
Support structure, and cmp planarization chemical industry skill is used, the silica for being overlying on the sacrificial layer surface or amorphous si film are removed；
In step S040, using plasma enhances chemical vapor deposition manner, and it is thin to form polycrystalline silicon grating in the sacrificial layer surface
Film.
9. the manufacturing method of two-dimensional grating structure according to claim 6, which is characterized in that step S030 and step S040
In, using high density plasma CVD mode, polysilicon is filled in the through hole, forms the polycrystalline of array-like
Silicon support construction；Then, continue in the sacrificial layer surface deposit polycrystalline silicon grating film, and using CMP process to described more
Crystal silicon grate film is planarized.
10. the manufacturing method of two-dimensional grating structure according to claim 6, which is characterized in that in step S050, to described
When grate film is patterned, make each equal-sized square of two-dimensional grating figure to be formed, and by ranks etc.
Away from orthogonal arrangement；Alternatively, the alternately arranged square column/row of each two-dimensional grating figure for making to be formed and rectangle column/
Row, and the orientation of each rectangle column/row is consistent.
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| CN114879295A (en) * | 2022-06-24 | 2022-08-09 | 清华大学 | Two-dimensional grating processing method and two-dimensional grating |
| CN114879295B (en) * | 2022-06-24 | 2023-12-29 | 清华大学 | Two-dimensional grating processing method and two-dimensional grating |
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