CN109890143A - It is a kind of film can be removed very well go film liquid - Google Patents
It is a kind of film can be removed very well go film liquid Download PDFInfo
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- CN109890143A CN109890143A CN201910316191.5A CN201910316191A CN109890143A CN 109890143 A CN109890143 A CN 109890143A CN 201910316191 A CN201910316191 A CN 201910316191A CN 109890143 A CN109890143 A CN 109890143A
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- film
- well
- propyl alcohol
- film liquid
- liquid
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Abstract
The invention discloses one kind film can be removed very well go film liquid, including component have: tetramethylammonium hydroxide, ethanol amine, azanol, N- methylbenzylamine, 1- propoxyl group -2- propyl alcohol, dipropylene glycol methyl ether, 1- butoxy -2- propyl alcohol, pyrroles, pyridine, water.By the above-mentioned means, it is of the invention film can be removed very well go film liquid, there is very strong penetration, peeling rate can be improved, there is extraordinary striping effect, it is high-efficient, the adjusting of striping concentration can be carried out according to different demands, the dry film between microcircuit can be removed.
Description
Technical field
The present invention relates to circuit board machining fields, go film liquid more particularly to what one kind can remove very well film.
Background technique
The galvanic circle that circuit is made of plain conductor and electrical, electronic component, makes in circuit input end plus power supply
Input terminal generates potential difference, and when circuit communication can work.Circuit board can make circuit miniaturization, intuitiveization, can be realized to solid
Determine the batch production and optimization electrical appliance layout of circuit.Circuit board is that electric system, control system, communication system, computer are hard
The chief component of the electric systems such as part, generation, transmission, conversion, control, processing and storage with electric energy and electric signal etc. are made
With.In the production process of circuit board, needs to use film liquid and carry out film process.
Summary of the invention
The invention mainly solves the technical problem of providing what one kind can remove very well film to go film liquid, using effect
It is good.
In order to solve the above technical problems, one technical scheme adopted by the invention is that: film can be shelled very well by providing one kind
From go film liquid, including component have: tetramethylammonium hydroxide, ethanol amine, azanol, N- methylbenzylamine, 1- propoxyl group -2- third
Alcohol, dipropylene glycol methyl ether, 1- butoxy -2- propyl alcohol, pyrroles, pyridine, water.
In a preferred embodiment of the present invention, the content of each component for going film liquid that film can be removed very well
Are as follows: based on mass fraction, tetramethylammonium hydroxide 6-9%, ethanol amine 15-25%, azanol 15-25%, N- methylbenzylamine 5-
15%, 1- propoxyl group -2- propyl alcohol 1-5%, dipropylene glycol methyl ether 1-4%, 1- butoxy -2- propyl alcohol 1-5%, pyrroles 2-6%, pyrrole
Pyridine 3-7%, water surplus.
In a preferred embodiment of the present invention, the content of each component for going film liquid that film can be removed very well
Are as follows: based on mass fraction, tetramethylammonium hydroxide 7.497%, ethanol amine 20%, azanol 20%, N- methylbenzylamine 10%, 1- third
Oxygroup -2- propyl alcohol 3%, dipropylene glycol methyl ether 2%, 1- butoxy -2- propyl alcohol 3%, pyrroles 4%, pyridine 5%, water surplus.
In a preferred embodiment of the present invention, it is described film can be removed very well go film liquid remove microcircuit between
Dry film application.
The beneficial effects of the present invention are: it is of the invention film can be removed very well go film liquid, there is very strong infiltration
Power can improve peeling rate, have extraordinary striping effect, high-efficient, can carry out striping concentration tune according to different demands
Section, can remove the dry film between microcircuit.
Specific embodiment
The technical scheme in the embodiments of the invention will be clearly and completely described below, it is clear that described implementation
Example is only a part of the embodiments of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
Technical staff's all other embodiment obtained without making creative work belongs to the model that the present invention protects
It encloses.
Embodiment one:
There is provided it is a kind of film can be removed very well go film liquid, including component have: tetramethylammonium hydroxide, ethanol amine, azanol,
N- methylbenzylamine, 1- propoxyl group -2- propyl alcohol, dipropylene glycol methyl ether, 1- butoxy -2- propyl alcohol, pyrroles, pyridine, water.It is described can
To the content for each component for going film liquid that film is removed very well are as follows: based on mass fraction, tetramethylammonium hydroxide 7.497%, ethyl alcohol
Amine 20%, azanol 20%, N- methylbenzylamine 10%, 1- propoxyl group -2- propyl alcohol 3%, dipropylene glycol methyl ether 2%, 1- butoxy -2-
Propyl alcohol 3%, pyrroles 4%, pyridine 5%, water surplus.The film liquid of going that can be removed very well to film is removed between microcircuit
Dry film go film liquid.
Embodiment two:
There is provided it is a kind of film can be removed very well go film liquid, including component have: tetramethylammonium hydroxide, ethanol amine, azanol,
N- methylbenzylamine, 1- propoxyl group -2- propyl alcohol, dipropylene glycol methyl ether, 1- butoxy -2- propyl alcohol, pyrroles, pyridine, water.It is described can
To the content for each component for going film liquid that film is removed very well are as follows: based on mass fraction, tetramethylammonium hydroxide 6%, ethanol amine
25%, azanol 15%, N- methylbenzylamine 15%, 1- propoxyl group -2- propyl alcohol 1%, dipropylene glycol methyl ether 4%, 1- butoxy -2- third
Alcohol 1%, pyrroles 6%, pyridine 3%, water surplus.
Embodiment three:
There is provided it is a kind of film can be removed very well go film liquid, including component have: tetramethylammonium hydroxide, ethanol amine, azanol,
N- methylbenzylamine, 1- propoxyl group -2- propyl alcohol, dipropylene glycol methyl ether, 1- butoxy -2- propyl alcohol, pyrroles, pyridine, water.It is described can
To the content for each component for going film liquid that film is removed very well are as follows: based on mass fraction, tetramethylammonium hydroxide 9%, ethanol amine
15%, azanol 25%, N- methylbenzylamine 5%, 1- propoxyl group -2- propyl alcohol 5%, dipropylene glycol methyl ether 1%, 1- butoxy -2- propyl alcohol
5%, pyrroles 2%, pyridine 7%, water surplus.
It is above-mentioned film can be removed very well go in film liquid, tetramethylammonium hydroxide, ethanol amine are the main of film liquid
System, the two collective effect carry out reacting removal with film;Azanol, N- methylbenzylamine, 1- propoxyl group -2- propyl alcohol, dipropylene glycol first
Ether, 1- butoxy -2- propyl alcohol collective effect, can adjust striping speed;Pyrroles, pyridine collective effect, can increase striping dynamics.Institute
State film can be removed very well go film liquid each component interact, have extraordinary effect.
Application method: film liquid can be gone to mix with deionized water capable of removing very well to film of preparing, goes film liquid
Volume ratio with deionized water is 70:930, builds bath, uses at 50 ~ 60 DEG C.Specific steps are as follows: one is added in operation slot
Half deionized water, then will go film liquid that mixing is added, finally the other half deionized water is added, is warmed to 50 ~ 60 DEG C.Generally exist
Going film liquid to account for film liquid and the percent by volume of deionized water total amount described in when use is 5-7%.Removing average range is 30-
50%。
The appearance for going film liquid that can be removed very well to film is yellow transparent liquid, specific gravity 1.030, pH > 14.Storage
Depositing condition is that storeroom needs to lock, and storage in a sealed container, avoids direct line, fires fire point and strong oxidizing property solid and oxidation
Property liquid, preferable shady place of divulging information.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalent structure or equivalent flow shift made by bright description is applied directly or indirectly in other relevant technology necks
Domain is included within the scope of the present invention.
Claims (4)
1. what one kind can remove very well film goes film liquid, which is characterized in that including component have: tetramethylammonium hydroxide, second
Hydramine, azanol, N- methylbenzylamine, 1- propoxyl group -2- propyl alcohol, dipropylene glycol methyl ether, 1- butoxy -2- propyl alcohol, pyrroles, pyridine,
Water.
2. it is according to claim 1 film can be removed very well go film liquid, which is characterized in that it is described can be fine to film
Removing each component for going film liquid content are as follows: based on mass fraction, tetramethylammonium hydroxide 6-9%, ethanol amine 15-25%,
Azanol 15-25%, N- methylbenzylamine 5-15%, 1- propoxyl group -2- propyl alcohol 1-5%, dipropylene glycol methyl ether 1-4%, 1- butoxy -
2- propyl alcohol 1-5%, pyrroles 2-6%, pyridine 3-7%, water surplus.
3. it is according to claim 1 film can be removed very well go film liquid, which is characterized in that it is described can be fine to film
The content of each component for going film liquid of removing are as follows: based on mass fraction, tetramethylammonium hydroxide 7.497%, ethanol amine 20%, hydroxyl
Amine 20%, N- methylbenzylamine 10%, 1- propoxyl group -2- propyl alcohol 3%, dipropylene glycol methyl ether 2%, 1- butoxy -2- propyl alcohol 3%,
Pyrroles 4%, pyridine 5%, water surplus.
4. it is according to claim 1 film can be removed very well go film liquid, which is characterized in that it is described can be fine to film
Removing goes film liquid in the application for removing the dry film between microcircuit.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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CN201810902194 | 2018-08-09 | ||
CN2018109021942 | 2018-08-09 |
Publications (1)
Publication Number | Publication Date |
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CN109890143A true CN109890143A (en) | 2019-06-14 |
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CN201910316191.5A Pending CN109890143A (en) | 2018-08-09 | 2019-04-19 | It is a kind of film can be removed very well go film liquid |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112698554A (en) * | 2021-02-01 | 2021-04-23 | 福建省佑达环保材料有限公司 | Photoresist cleaning agent for semiconductor process |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1402090A (en) * | 2001-08-03 | 2003-03-12 | 东京应化工业株式会社 | Stripping liquor for photoresist and photoresist stripping method therewith |
JP2005043874A (en) * | 2003-06-26 | 2005-02-17 | Dongwoo Fine-Chem Co Ltd | Photoresist stripping liquid composition and method for stripping photoresist by using the same |
CN1791969A (en) * | 2003-06-04 | 2006-06-21 | 花王株式会社 | Removing agent composition and removing/cleaning method using same |
CN108255026A (en) * | 2016-12-28 | 2018-07-06 | 安集微电子(上海)有限公司 | A kind of low etching photoresist residual washing liquid composition |
-
2019
- 2019-04-19 CN CN201910316191.5A patent/CN109890143A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1402090A (en) * | 2001-08-03 | 2003-03-12 | 东京应化工业株式会社 | Stripping liquor for photoresist and photoresist stripping method therewith |
CN1791969A (en) * | 2003-06-04 | 2006-06-21 | 花王株式会社 | Removing agent composition and removing/cleaning method using same |
JP2005043874A (en) * | 2003-06-26 | 2005-02-17 | Dongwoo Fine-Chem Co Ltd | Photoresist stripping liquid composition and method for stripping photoresist by using the same |
CN108255026A (en) * | 2016-12-28 | 2018-07-06 | 安集微电子(上海)有限公司 | A kind of low etching photoresist residual washing liquid composition |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112698554A (en) * | 2021-02-01 | 2021-04-23 | 福建省佑达环保材料有限公司 | Photoresist cleaning agent for semiconductor process |
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Application publication date: 20190614 |
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