CN109889179A - Resonator and ladder-type filter - Google Patents
Resonator and ladder-type filter Download PDFInfo
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- CN109889179A CN109889179A CN201811605285.6A CN201811605285A CN109889179A CN 109889179 A CN109889179 A CN 109889179A CN 201811605285 A CN201811605285 A CN 201811605285A CN 109889179 A CN109889179 A CN 109889179A
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Abstract
The present invention relates to the communications field, a kind of resonator and ladder-type filter are provided.In the present invention, resonator includes: substrate, hearth electrode, piezoelectric layer, top electrode, sound wave catoptric arrangement and the bulge-structure to adjust filter passband performance；Wherein, for piezoelectric layer between top electrode and hearth electrode, bulge-structure is located at the one side for deviating from piezoelectric layer on top electrode, or the surface of the piezoelectric layer under the top electrode, perhaps the upper surface of the hearth electrode under the piezoelectric layer or be located at the hearth electrode under；Sound wave catoptric arrangement is between substrate and hearth electrode.The present invention is compared with prior art, the miscellaneous peak in left side in series resonator impedance frequency characteristic curve is moved to the left by bulge-structure design, so that the defects of filter passband moves in filter stop bend, to improve the performance of filter, and the rare earth doped element of piezoelectric layer, the reduction of the resonator electromechanical coupling factor caused by can make up for it because of bulge-structure design.
Description
Technical field
The present invention relates to field of communication technology, particularly a kind of resonator and ladder-type filter.
Background technique
With the fast development of wireless telecommunication system, people to the filtering device of wireless terminal propose micromation, it is integrated,
The new requirement such as high frequency.Thin film bulk acoustic wave resonator (abbreviation FBAR), because of its high resonant frequency, high quality factor, high power
Many advantages, such as ability to bear, low-power consumption, low price, can cascade into high working frequency, low insertion loss, high steep drop
Characteristic, the filter of high power ability to bear, duplexer are generally considered substitution SAW device and solve wireless communication height
The preferred plan of intensive frequency range duplexer and receive significant attention.
Typical FBAR structure as shown in Figure 1, include top electrode 101, hearth electrode 103, the piezoelectric layer 102 being clipped in the middle,
Positioned at the sound wave catoptric arrangement 104 and substrate 105 of hearth electrode 103.It is sinusoidal by being inputted between top electrode 101 and hearth electrode 103
The sinusoidal electric signals of input are converted to mechanical resonant using inverse piezoelectric effect, then recycle piezoelectric effect by electric signal, FBAR
Mechanical resonant is converted into electric signal output.Resonator can be constructed into frequency filter according to certain topological structure connection
Part, the resonator connection topological structure that one of the most common forms filter is Ladder structure (i.e. trapezium structure).Such as Fig. 2 institute
Show, every level-one of ladder-type filter by a series resonator (X1, X2 ... or Xn) and parallel resonator (Y1, Y 2 ... or
Y n) composition.Except the resonance frequency of resonator, the external electrical properties of entire device are substantially behaved as the form of capacitor,
Therefore the electricity transmission characteristic of whole network is consistent with step-like capacitance network.Resonant frequency in parallel in Ladder structure
It is lower than concatenated resonant frequency.
FBAR mainly utilizes longitudinal piezoelectric modulus of piezoelectric membrane to generate piezoelectric effect, so its main operation modes is thickness
Spend the p-wave model (Thickness Extensional Mode, abbreviation TE mode) on direction.Thin film bulk acoustic wave resonator is only
Excited thickness direction (TE) mould, but other than desired TE mode, lateral spurious mode can be also generated, such as Rayleigh-drawing
Nurse mould is the mechanical wave perpendicular with the direction of TE mould.The wave of these transverse modes can lose in the boundary of resonator, from
And the energy loss of longitudinal mode needed for making resonator, eventually lead to resonator q decline.In order to solve at resonator edge
The loss of energy, a kind of common method are to increase by a bulge-structure around electrode edge on the resonator.Since protrusion is tied
The acoustic impedance in acoustic impedance and resonator effective coverage in structure mismatches, so as to which the sound wave of edge is reflected back resonance
In device, so as to reduce the loss of energy in resonator.
But as shown in figure 3, the bulge-structure being added, can make series resonator deposit on the left of impedance frequency curve
In miscellaneous peak 301, so as to cause existing defects 302 in the passband of filter, so that the performance of filter declines.
Summary of the invention
In view of this, the present invention provides a kind of resonator and ladder-type filter, resonance is improved by increasing bulge-structure
While device Q value, designed by bulge-structure in resonator, by series resonator impedance frequency characteristic curve left side it is miscellaneous
Peak is moved to the left, so that the defects of filter passband moves in filter stop bend, to improve the performance of filter.
In order to solve the above technical problems, multiple resonators are used for the embodiment provides a kind of resonator
Cascade shaping filter；The resonator include: substrate, hearth electrode, piezoelectric layer, top electrode, sound wave catoptric arrangement and to
Adjust the bulge-structure of filter passband performance；The piezoelectric layer is described convex between the top electrode and the hearth electrode
It plays structure and is located at the one side for deviating from the piezoelectric layer on the top electrode, or the piezoelectric layer under the top electrode
Surface, perhaps the upper surface of the hearth electrode under the piezoelectric layer or be located at the hearth electrode under；It is described
Sound wave catoptric arrangement is between the substrate and the hearth electrode.
The embodiments of the present invention also provide a kind of ladder-type filter, the filter includes multiple above-mentioned resonators, more
A resonator cascades to form the filter.
The bulge-structure of resonator of the present invention designs, can be by the series resonator while improving resonator q
Miscellaneous peak on the left of impedance frequency characteristic curve is moved to the left, so that the defects of described filter passband moves to the filter
In stopband, so as to improve the band-pass behavior of filter.
Optionally, rare earth doped element in the material composition of the piezoelectric layer.It, can be more in the rare earth doped element of piezoelectric layer
The reduction of resonator electromechanical coupling factor caused by mending because of bulge-structure design.
Optionally, the material composition of the piezoelectric layer is aluminium nitride, rare earth doped element in the aluminium nitride.
Optionally, the rare earth element be it is following any one or a few: lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium,
Dysprosium, holmium, erbium, thulium, ytterbium, lutetium, yttrium and scandium.
Optionally, the sound wave catoptric arrangement is located at the upper surface of the substrate.
Optionally, the substrate has corresponding to the sound wave catoptric arrangement, and wherein the one of the sound wave catoptric arrangement
Part is in the substrate.
Optionally, the sound wave catoptric arrangement is acoustic mirror.
Optionally, the acoustic mirror is air chamber or Bragg reflecting layer.
Optionally, by increasing bulge-structure thickness, the miscellaneous peak in filter passband is moved in stopband.
Optionally, the bulge-structure has a pre-determined distance at a distance from the top electrode edge.
Optionally, the density of material of bulge-structure is greater than the density of material of the top electrode.
Optionally, the position that the top electrode corresponds to the bulge-structure has sunk structure, and the sunk structure
Positioned at the inside of the bulge-structure.
Optionally, the top electrode has bridge wing structure and the bridge wing structure is located at the outside of the bulge-structure, institute
Stating has air-gap between bridge wing structure and the piezoelectric layer, and the bridge wing structure corresponds to the sound wave catoptric arrangement.
And/or the top electrode has bridge portion structure, and bridge portion structure is located at the outside of the bulge-structure, the bridge portion knot
Structure has air-gap between a part and the piezoelectric layer of the bulge-structure.
Detailed description of the invention
Attached drawing for a better understanding of the present invention, does not constitute an undue limitation on the present invention.Wherein:
Fig. 1 is the structural schematic diagram of prior art acoustic resonator；
Fig. 2 is the structural schematic diagram of prior art filter；
Fig. 3 is the transfer curve of the impedance curve of resonator and filter comparison signal in prior art filter
Figure；
Fig. 4 is the structural schematic diagram of resonator in first embodiment；
Fig. 5 is the sectional view that Fig. 4 is taken along the direction top view 1B-1B；
Fig. 6 is the transfer curve contrast schematic diagram of the impedance curve of resonator and filter in first embodiment；
Fig. 7 is the structural schematic diagram of resonator in second embodiment；
Fig. 8 is the sectional view that Fig. 7 is taken along the direction top view 1B-1B；
Fig. 9 is the structural schematic diagram of resonator in third embodiment；
Figure 10 is the sectional view that Fig. 9 is taken along the direction top view 1B-1B；
Figure 11 is the structural schematic diagram of resonator in the 4th embodiment；
Figure 12 is the sectional view that Figure 11 is taken along the direction top view 1B-1B；
Figure 13 is the structural schematic diagram of resonator in the 5th embodiment；
Figure 14 is the sectional view that Figure 13 is taken along the direction top view 1B-1B；
Figure 15 is the structural schematic diagram of resonator in sixth embodiment；
Figure 16 is the sectional view that Figure 15 is taken along the direction top view 1B-1B.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with attached drawing to the present invention
Each embodiment be explained in detail.However, it will be understood by those skilled in the art that in various embodiments of the present invention
In, in order to make the reader understand this application better, many technical details are proposed.But even if without these technical details and
Based on the various changes and modifications of following embodiment, the application technical solution claimed also may be implemented.
The first embodiment of the present invention is related to a kind of resonator.Multiple resonators are for cascading shaping filter.Such as
Shown in Fig. 4 and Fig. 5, the resonator include: substrate 401, hearth electrode 402, piezoelectric layer 403 and doped with rare earth element, top electricity
Pole 404, sound wave catoptric arrangement 405 and the bulge-structure 406 for adjusting filter passband performance.The piezoelectric layer 403
Between the top electrode 404 and the hearth electrode 402, the bulge-structure 406 is located on the top electrode 404 away from described
The one side of piezoelectric layer 403, however, not limited to this, may be located on other positions.For example, being located under the top electrode 404
The surface of the piezoelectric layer 403 perhaps the upper surface of the hearth electrode 402 under the piezoelectric layer 403 or is located at
Under the hearth electrode 402.In addition, top electrode 404 and 402 composition material of hearth electrode can by golden (Au), tungsten (W), molybdenum (Mo),
Platinum (Pt), the metalloids such as ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminium (Al), titanium (Ti) are formed.The material of bulge-structure forms
It identical as top electrode can also be different.Preferably, the density of material of the bulge-structure is greater than the material of the top electrode
Density can make for the miscellaneous peak in filter passband to be moved in stopband in this way.
The processing method of bulge-structure 406 are as follows: firstly, on the surface of top electrode, it is similar by PVD, CVD or PECVD etc.
Thin film deposition processes deposit a layer specific thickness film；Then, in one layer photoresist of surface spin coating of film, by ultraviolet
Pattern on photolithography plate is transferred on photoresist and forms etching barrier layer by the method for line exposing；Finally, by dry etching or
The process of person's wet etching falls partial etching unwanted in the film deposited on top electrode, remove photoresist it
Afterwards, it is formed the bulge-structure of design.
The sound wave catoptric arrangement 405 is between the substrate 401 and the hearth electrode 402.Wherein, the sound wave is anti-
Penetrating structure 405 is acoustic mirror.In practical application, the sound wave catoptric arrangement 405 can be located at the upper table of the substrate 401
Face can also be located at the inside of substrate 401.In figure by taking acoustic mirror is in the air chamber for be embedded in substrate 401 as an example, but it is worth saying
Bright, any other acoustic mirror structure such as Bragg reflector is equally applicable.
The region for being usually overlapped top electrode 404, piezoelectric layer 403, hearth electrode 402 and acoustic mirror in a thickness direction defines
For the effective coverage of resonator.There is the first acoustic impedance in the effective coverage of resonator, and have the in bulge-structure 406
Two acoustic impedances, due to the first acoustic impedance in resonator effective coverage and rising tone impedance mismatch in bulge-structure 406, thus
So that the sound wave laterally propagated is reflected back in the edge of bulge-structure 406, the damage of acoustic wave energy in resonator is reduced
It loses, thus improves the figure of merit value i.e. Q value of resonator.But increased bulge-structure 406, can series resonator be existed
There are miscellaneous peaks 601 on the left of impedance frequency curve, so as to cause existing defects 602 in the passband of filter, so that filter
The performance of wave device declines, as shown in Figure 6.In embodiments of the present invention, by increasing the thickness D of bulge-structure 406, can make
Resonance frequency in bulge-structure is lower, so can by the miscellaneous peak 601 on the left of series resonator impedance frequency characteristic curve to
It moves left at distant place 603, so that the defects of filter passband structure 602 is moved to the unwanted resistance of Filter specification institute
At 604 in band.Moreover, the sound for being reflected back transverse mode in resonator can be further increased while increasing bulge-structure
Wave energy, so that the Q value of resonator further gets a promotion.
But in actual application, while increasing by 406 thickness D of bulge-structure, the electromechanical coupling of resonator will lead to
Collaboration number declines to a great extent.Reason are as follows: the increase of 406 thickness D of bulge-structure can make the sound for being reflected back transverse mode in resonator
Wave energy increases, and reduces so that the acoustic wave energy of vertical mode is opposite in resonator, and then lead to the electromechanical coupling of resonator
Collaboration declines to a great extent.As shown in Figure 6, it will lead to the distance between series resonance point 605 and parallel resonant point 606 to become smaller.It is right
For series resonator, in resonance, there are two resonance points, respectively series resonance point and parallel resonant point, humorous connecting
The phase of extra electric field is identical as the phase of piezoelectric membrane internal polarization vector when vibration, and the electrical impedance of resonator is minimum at this time
Value, as shown in FIG. 6 605；The opposite in phase of the phase of extra electric field and internal polarization vector in parallel resonance, at this time resonance
The electrical impedance of device be maximum, as shown in FIG. 6 606.Wherein, between series resonance point and parallel resonant point distance size
Indicate the size of resonator electromechanical coupling factor.
In order to make up the thickness D because adjusting bulge-structure 406, and lead to the reduction of resonator electromechanical coupling factor, it can be with
By being doped rare earth element, the electromechanical coupling factor of Lai Tigao resonator to 403 material of piezoelectric layer.Wherein typical piezoelectricity
403 material composition of layer can be aluminium nitride etc., and such material is piezoelectric membrane, and thickness is less than 10 microns.Aluminium nitride film is
Perhaps single crystal forms growth pattern is thin film sputtering (sputtering) or Metalorganic chemical vapor deposition method to heteromorphs
(MOCVD).Rare earth element can for it is following any one or it is several: lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium
(Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), yttrium
(Y), scandium (Sc) etc..Wherein, typical doped chemical is scandium (Sc).When to AlN 403 material doped rare earth element of piezoelectric layer,
Since the atomic radius of rare earth element is bigger, change so as to cause the stress in piezoelectric material, and then lead to piezoresistive material
Electric dipole in material changes, and when applying an electric field to piezoelectric layer 403 at this time, will generate in piezoelectric layer 403 bigger
Mechanical response.As shown in Figure 6, series resonance o'clock is moved at 607 from 605 after doping, series resonance point and parallel resonance
The distance between point becomes larger, so that resonator obtains higher electromechanical coupling factor.
Preferably, it can be realized by selecting the material of bulge-structure 406 series resonator impedance frequency characteristic is bent
Miscellaneous peak on the left of line is moved to the left at a distance.For example, the density of material that can choose bulge-structure 406 is closeer than top electrode 404
Spend it is larger, at this time can also be left by series resonator impedance frequency characteristic curve so that the resonance frequency in bulge-structure is lower
The miscellaneous peak of side is moved to the left at a distance, thus by being cascaded in the filter passband to be formed with the resonator with bulge-structure 406
Defect sturcture be moved out to other than passband.
The second embodiment of the present invention is related to a kind of resonator, and the present embodiment, which removes, includes technology all in first embodiment
It except feature, also improves on the basis of first embodiment, mainly thes improvement is that: the bulge-structure and the top
The distance of electrode edge has a pre-determined distance.The size of pre-determined distance is adjusted according to the different performance indicator of filter, will
Miscellaneous peak in filter passband moves on in stopband.
As shown in Figure 7 and Figure 8, distance of the bulge-structure 406 apart from 404 edge of resonator top electrode is W1.It is described default
The size of distance W1 is adjusted according to the specific performance indicator of filter, can be made the miscellaneous peak in filter passband
It moves on in stopband, it can by adjusting distance W1 of the bulge-structure 406 apart from 404 edge of resonator top electrode, can make
Resonance frequency in bulge-structure is lower relative to the main resonatnt frequency in resonator effective coverage, and then series resonator is hindered
Miscellaneous peak on the left of anti-frequency characteristic is moved to the left at a distance.For example, can be by increasing W1 namely by bulge-structure 406
Shift to the central area close to resonator, with this may be implemented by the miscellaneous peak on the left of series resonator impedance frequency characteristic curve to
It moves left at a distance, is moved so that the resonator with bulge-structure 406 is cascaded the defects of the filter passband to be formed structure
Out to other than passband.
The third embodiment of the present invention is related to a kind of resonator, and the present embodiment, which removes, includes technology all in first embodiment
Except feature, also improve on the basis of first embodiment, mainly the improvement is that: the top electrode corresponds to described
The position of bulge-structure has sunk structure, and the sunk structure is located at the inside of the bulge-structure.
As shown in Figure 9 and Figure 10, the position that the top electrode 404 corresponds to the bulge-structure 406 has sunk structure
901, and the sunk structure 901 is located at the inside of the bulge-structure 406.There is third acoustic impedance in sunk structure 901.
Due to the acoustic impedance in resonator effective coverage and the acoustic impedance in bulge-structure 406 and the third sound in sunk structure 901
Impedance mismatch, so reflex of the resonator in 404 edge of top electrode to transverse mode wave can be further increased.And
Transverse mode wave a part is converted to the wave with resonator vertical vibration mode, so that the Q value of resonator further increases.Its
Relief structure 406 can increase the Qp value (figure of merit value that Qp value refers to parallel resonant point) of resonator, sunk structure
901 can increase the Qs value (figure of merit value that Qs value refers to series resonance point) of resonator, so as to increase resonator
Total figure of merit value Q value.In the present embodiment, it is designed by bulge-structure, the resonance frequency in bulge-structure can be made
It is lower, and then the miscellaneous peak in left side in series resonator impedance frequency characteristic curve is moved to the left, so that in filter passband
Defect moves in filter stop bend, to improve the performance of filter.
The fourth embodiment of the present invention is related to a kind of resonator, and the present embodiment, which removes, includes technology all in first embodiment
Except feature, also improve on the basis of first embodiment, mainly the improvement is that: the top electrode has bridge wing knot
Structure.
As is illustrated by figs. 11 and 12, the top electrode 404 has bridge wing structure 111 and the bridge wing structure 11 is positioned at described
The outside of bulge-structure 406.There is air-gap 112, and the bridge between the bridge wing structure 111 and the piezoelectric layer 403
Wing structure 111 is corresponding to be located at 405 inside of sound wave catoptric arrangement.
Resonator is other than having bulge-structure 406 in Figure 12, and there is also bridge wing structures 111.The wherein bridge wing knot
There is air-gap 112 between structure 111 and the piezoelectric layer 403.And the direction in conjunction with shown in Figure 12, the bridge wing structure 111
Projection in a thickness direction is located within the sound wave catoptric arrangement 405 of resonator.Due to bridge wing structure 111 and piezoelectric layer 403
Between there is air-gap 112, the acoustic impedance in acoustic impedance and resonator effective coverage in air-gap 112 mismatches, Neng Goujin
The sound wave of transverse mode in resonator is reflected back in resonator by one step, and some acoustic wave energy change into it is vertical with resonator
The wave of mode, so that the Q value of resonator further increases.In the present embodiment, it is designed, can be made by bulge-structure
Resonance frequency in bulge-structure is lower, and then by the miscellaneous peak in left side in series resonator impedance frequency characteristic curve to moving to left
It is dynamic, so that the defects of filter passband moves in filter stop bend, to improve the performance of filter.
The fifth embodiment of the present invention is related to a kind of resonator, and the present embodiment, which removes, includes technology all in first embodiment
Except feature, also improve on the basis of first embodiment, mainly the improvement is that: the top electrode is tied with bridge portion
Structure.
As shown in Figure 13 and Figure 14, the top electrode 404 has bridge portion structure 131, and bridge portion structure 131 is located at institute
State the outside of bulge-structure 406, a part and the piezoelectric layer 403 of bridge portion structure 131 close to the bulge-structure 406
Between have air-gap 112.Due to the acoustic impedance in the lower air-gap 112 of bridge portion structure 131 and the sound in resonator effective coverage
The sound wave of transverse mode in resonator can be further reflected back in resonator by impedance mismatch, and some sound wave energy
Amount changes into the wave with resonator vertical mode, so that the Q value of resonator further increases.In the present embodiment, by convex
Structure design is played, the resonance frequency in bulge-structure can be made to be lower, and then by series resonator impedance frequency characteristic curve
The miscellaneous peak in middle left side is moved to the left, so that the defects of filter passband moves in filter stop bend, to improve filter
Performance.
The sixth embodiment of the present invention is related to a kind of resonator, and the present embodiment, which removes, includes technology all in first embodiment
Except feature, also improve on the basis of first embodiment, mainly the improvement is that: the top electrode had both had the bridge wing
Structure has bridge portion structure again.Meanwhile the position that the top electrode corresponds to the bulge-structure has sunk structure.
As shown in Figure 15 and Figure 16, the top electrode 404 has bridge wing structure 111 and the bridge wing structure 111 is located at institute
The outside of bulge-structure 406 is stated, there is air-gap 112, and described between the bridge wing structure 111 and the piezoelectric layer 403
Bridge wing structure 111 is corresponding to be located at 405 inside of sound wave catoptric arrangement.Due to having between bridge wing structure 111 and piezoelectric layer 403
Air-gap 112, the acoustic impedance in acoustic impedance and resonator effective coverage in air-gap 112 mismatch, can further will be humorous
The sound wave of transverse mode is reflected back in resonator in vibration device, and some acoustic wave energy changes into and resonator vertical mode
Wave, so that the Q value of resonator further increases.The top electrode 404 has bridge portion structure 131, and bridge portion structure
131 be located at the bulge-structure 406 outside, bridge portion structure 131 close to the bulge-structure 406 a part with it is described
There is air-gap 112 between piezoelectric layer 403.Due to the acoustic impedance and resonator effective district in the lower air-gap 112 of bridge portion structure 131
Acoustic impedance in domain mismatches, and further the sound wave of transverse mode in resonator can be reflected back in resonator, and have one
Acoustic wave energy is divided to change into the wave with resonator vertical mode, so that the Q value of resonator further increases.In sunk structure
There is third acoustic impedance in 901.Due to acoustic impedance and acoustic impedance in bulge-structure 406 in resonator effective coverage and recessed
The third acoustic impedance fallen into structure 901 mismatches, so resonator can be further increased in 404 edge of top electrode to lateral mould
The reflex of formula wave.And transverse mode wave a part is converted to the wave with resonator vertical vibration mode, so that resonance
The Q value of device further increases.Its relief structure 406 can increase the Qp value of resonator, and (Qp value refers to parallel resonant point
Figure of merit value), sunk structure 901 can increase the Qs value of resonator, and (Qs value refers to the quality factor of series resonance point
Value), so as to increase the total figure of merit value Q value of resonator.In the present embodiment, it is designed, can be made by bulge-structure
Resonance frequency in bulge-structure is lower, and then by the miscellaneous peak in left side in series resonator impedance frequency characteristic curve to moving to left
It is dynamic, so that the defects of filter passband moves in filter stop bend, to improve the performance of filter.
The seventh embodiment of the present invention is related to ladder-type filter.The ladder-type filter includes multiple first, second,
Three, the four, the 5th or sixth embodiment described in resonator, multiple resonators cascade to form the ladder-type filter.
Above-mentioned specific embodiment, does not constitute a limitation on the scope of protection of the present invention.Those skilled in the art should be bright
It is white, design requirement and other factors are depended on, various modifications, combination, sub-portfolio and substitution can occur.It is any
Made modifications, equivalent substitutions and improvements etc. within the spirit and principles in the present invention, should be included in the scope of the present invention
Within.
Claims (12)
1. a kind of resonator, which is characterized in that multiple resonators are for cascading shaping filter；
The resonator includes: substrate, hearth electrode, piezoelectric layer, top electrode, sound wave catoptric arrangement and can be by series resonator
The miscellaneous peak in left side is moved to the left so that the defects of filter passband moves in filter stop bend in impedance frequency characteristic curve
Bulge-structure.
Between the top electrode and the hearth electrode, the bulge-structure is located on the top electrode and deviates from the piezoelectric layer
The one side of the piezoelectric layer, perhaps the surface of the piezoelectric layer under the top electrode or be located at the piezoelectric layer
Under the hearth electrode upper surface, or be located at the hearth electrode under；
The sound wave catoptric arrangement is between the substrate and the hearth electrode.
2. resonator according to claim 1, which is characterized in that rare earth doped member in the material composition of the piezoelectric layer
Element.
3. resonator according to claim 1, which is characterized in that the material composition of the piezoelectric layer is aluminium nitride, described
Rare earth doped element in aluminium nitride.
4. resonator according to claim 1, which is characterized in that the sound wave catoptric arrangement is located at the upper table of the substrate
Face.
5. resonator according to claim 1, which is characterized in that the sound wave catoptric arrangement is acoustic mirror.
6. resonator according to claim 1, which is characterized in that the thickness of the bulge-structure is adjustable；
The size of the bulge-structure thickness, to be adjusted according to the specific performance indicator of filter, so that by filter passband
In miscellaneous peak move on in stopband.
7. resonator according to claim 1, which is characterized in that the bulge-structure is at a distance from the top electrode edge
For a pre-determined distance；
The size of the pre-determined distance, to be adjusted according to the specific performance indicator of filter, so that by filter passband
Miscellaneous peak moves on in stopband.
8. resonator according to claim 1, which is characterized in that the material of the material of the bulge-structure and the top electrode
Material is different.
9. resonator according to claim 8, which is characterized in that the density of material of the bulge-structure is greater than the top electricity
The density of material of pole；
The density of material of the bulge-structure, to be selected according to the specific performance indicator of filter, so that by filter passband
In miscellaneous peak be moved in stopband.
10. resonator according to claim 1, which is characterized in that the top electrode corresponds to the position of the bulge-structure
It sets with sunk structure, and the sunk structure is located at the inside of the bulge-structure.
11. resonator according to claim 1, which is characterized in that the top electrode has bridge wing structure and the bridge wing
Structure is located at the outside of the bulge-structure, has air-gap, and the bridge between the bridge wing structure and the piezoelectric layer
Wing structure is corresponding to be located inside the sound wave catoptric arrangement；
And/or the top electrode has bridge portion structure, and bridge portion structure is located at the outside of the bulge-structure, the bridge
Portion's structure has air-gap between a part and the piezoelectric layer of the bulge-structure.
12. a kind of ladder-type filter, which is characterized in that the ladder-type filter includes multiple as any in claim 1 to 11
Resonator described in one, multiple resonators cascade to form the ladder-type filter, wherein the ladder-type filter it is every
Level-one includes a series resonator and a parallel resonator.
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