CN109888028B - CdTe battery TCO layer capable of reflecting infrared rays and ultraviolet rays - Google Patents
CdTe battery TCO layer capable of reflecting infrared rays and ultraviolet rays Download PDFInfo
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Abstract
The invention relates to the technical field of thin-film solar cell manufacturing, and discloses a CdTe cell TCO layer capable of reflecting infrared rays and ultraviolet rays, which comprises the following raw materials in parts by weight: 10 parts of hollow glass beads and 20-25 parts of Al (NO)3)3·9H2O, 10.4-17.3 parts of TiCl4300 parts of InCl3With 15-25 parts of SnCl4·5H2O, the preparation method of the TCO layer of the CdTe battery comprises the following steps: firstly preparing to obtain a reflecting component and Sn doped In2O3And (3) preparing a target component for obtaining the TCO layer of the CdTe battery, and finally preparing the TCO layer of the CdTe battery. The invention solves the technical problem that the TCO layer of the CdTe battery in the prior art can not effectively reflect near infrared rays and ultraviolet rays while having higher visible light transmittance.
Description
Technical Field
The invention relates to the technical field of thin film solar cell manufacturing, in particular to a CdTe cell TCO layer capable of reflecting infrared rays and ultraviolet rays.
Background
The CdTe thin film solar cell is a thin film solar cell taking p-type CdTe and n-type CdS as heterojunction, as shown in figure 1, five layers of thin films are deposited on a glass substrate 1 together, and sequentially comprise a back electrode 2, a back contact layer 3, a p-CdTe layer 4 with the thickness of 5um, an n-CdS layer 5 with the thickness of 80-150nm and a TCO layer 6 with the thickness of 300 nm; the TCO layer 6, i.e., the transparent conductive oxide layer, and the resistivity and transmittance of TCO materials commonly used in solar cells are shown in table 1 below.
TABLE 1
| Material | Transmittance (%) |
| SnO2 | 80 |
| In2O3：Sn(ITO) | >80 |
| In2O3：Ga(IGO) | 85 |
| In2O3：F | 85 |
| Cd2SnO4(CTO) | 85 |
| Zn2SnO4(ZnTO) | 90 |
| ZnO：In | 85 |
The energy gap of the CdTe is generally 1.45eV, and the spectral response of the CdTe is well matched with the optimal absorption position of the visible light spectrum, namely 1.45eV-1.5 eV; the infrared light with too low frequency cannot enable electrons in a PN junction of the CdTe thin film solar cell to jump to a higher energy band, and further cannot enable the electrons to generate hole carrier pairs; the ultraviolet light with higher frequency can not be absorbed by the CdTe thin film solar cell, and the ultraviolet light is harmful to the CdTe thin film solar cell, so that the aging of the CdTe thin film solar cell can be accelerated, and the photoelectric conversion efficiency of the CdTe thin film solar cell can be reduced.
While the light transmittance of the TCO layer 6 in the prior art in the visible light spectrum with the wavelength of 400-860nm exceeds 85%, the TCO layer 6 does not have the performance of reflecting the near infrared light with the wavelength of 800-2500nm and simultaneously does not have the performance of reflecting the ultraviolet light.
The invention provides a CdTe layer of a CdTe battery capable of reflecting infrared rays and ultraviolet rays, and aims to solve the technical problem that the CdTe layer of the CdTe battery in the prior art cannot effectively reflect near-infrared rays and ultraviolet rays while having high visible light transmittance.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides the CdTe layer of the CdTe battery capable of reflecting infrared rays and ultraviolet rays, and solves the technical problem that the CdTe layer of the CdTe battery in the prior art cannot effectively reflect near infrared rays and ultraviolet rays while having higher visible light transmittance.
(II) technical scheme
In order to achieve the purpose, the invention provides the following technical scheme:
the CdTe cell TCO layer capable of reflecting infrared rays and ultraviolet rays comprises the following raw materials in parts by weight: 10 parts of hollow glass beads and 20-25 parts of Al (NO)3)3·9H2O, 10.4-17.3 parts of TiCl4300 parts of InCl3With 15-25 parts of SnCl4·5H2O。
Preferably, the average particle size of the hollow glass beads is less than or equal to 10um or less than or equal to 1 um.
Preferably, the preparation method of the CdTe battery TCO layer comprises the following steps:
s1, 10 parts of hollow glass beads and 20-25 parts of Al (NO)3)3·9H2O, 10.4-17.3 parts of TiCl4As raw materials, preparing a reflecting component;
s2, using 300 parts of InCl3With 15-25 parts of SnCl4·5H2O is used as a raw material to prepare Sn doped In2O3Preparing components;
s3, doping the reflecting component In the step S1 and the Sn doped In the step S22O3Placing the components and 50mL of absolute ethyl alcohol into a ball milling tank for ball milling, then placing the ball milling tank into a vacuum furnace with the vacuum degree of 80Pa and the pressure of 15MPa, heating the ball milling tank at the speed of 5 ℃/min, keeping the temperature for 2h when the temperature is raised to 1100 ℃, then cooling the ball milling tank, taking the ball milling tank out when the temperature is lowered to the room temperature, and preparing a target material component for a TCO layer of a CdTe battery, wherein the annealing speed is 5 ℃/min, the temperature is kept for 1h when the temperature is lowered to 600 ℃;
s4, adopting a magnetron sputtering deposition method to perform sputtering deposition on the target material component in the step S3 under the air pressure of 6 multiplied by 10-5Pa, sputtering power of 100W, sputtering gas of Ar gas, substrate temperature of 260 deg.C, and depositionThe CdTe layer is deposited on the n-CdS layer of the CdTe battery to prepare the TCO layer of the CdTe battery.
Preferably, zirconium beads with a diameter of 3mm are used in step S3, in N2Ball milling under protection.
Preferably, the preheating temperature of the vacuum furnace in the step S3 is 900 ℃.
(III) advantageous technical effects
Compared with the prior art, the invention has the following beneficial technical effects:
the invention mainly uses the reflecting component and Sn to dope In2O3Preparing a TCO layer of a CdTe battery by using the components as raw materials;
through tests, the average light transmittance of the CdTe battery TCO layer in the wavelength range of 400-760nm is 89-94%, and compared with the average light transmittance of the CdTe battery TCO layer in the comparative example of 86-87% in the wavelength range of 400-760nm, the technical effect of remarkably improving the light transmittance of the CdTe battery TCO layer in the visible light range is achieved;
the average reflectivity of the TCO layer of the CdTe battery in the range of 780-110nm is 89-93%, and compared with the average reflectivity of the TCO layer of the CdTe battery in the comparative example of 9-11% in the range of 780-110nm, the technical effect of remarkably improving the reflectivity of the TCO layer of the CdTe battery in the near infrared light range is achieved;
the average reflectivity of the TCO layer of the CdTe battery prepared by the method is 88-93% within the wavelength range of 10-400nm, and compared with the average reflectivity of the TCO layer of the CdTe battery in a comparative example, which is 11-13% within the wavelength range of 10-400nm, the technical effect of obviously improving the reflectivity of the TCO layer of the CdTe battery within the ultraviolet light range is achieved;
compared with the prior art, the technical scheme has the advantages that the light transmittance of the TCO layer of the CdTe battery in a visible light range is remarkably improved, the reflectivity of the TCO layer of the CdTe battery in a near infrared light range is remarkably improved, the reflectivity of the TCO layer of the CdTe battery in an ultraviolet light range is remarkably improved, and therefore the technical effect of effectively reflecting near infrared light and ultraviolet light is achieved while the TCO layer of the CdTe battery has high visible light transmittance.
Drawings
FIG. 1 is a schematic structural diagram of a CdTe thin film solar cell in the prior art.
The following are marked in the figure: the solar cell comprises a 1-glass substrate, a 2-back electrode, a 3-back contact layer, a 4-p-CdTe layer, a 5-n-CdS layer and a 6-TCO layer.
Detailed Description
The first embodiment is as follows:
the TCO layer of the CdTe battery comprises the following raw materials: 10g hollow glass micro-beads with average grain diameter less than or equal to 10um and 20gAl (NO)3)3·9H2O、7.5mLTiCl4、300gInCl3And 18g SnCl4·5H2O; wherein, TiCl4Has a density of 1.726g/cm3，7.5mLTiCl4Has a mass of 12.9 g;
the preparation method of the CdTe layer of the CdTe battery comprises the following steps:
s1, weighing 10g of hollow glass microspheres with the average particle size of less than or equal to 10um, adding the hollow glass microspheres into a 500mL four-neck flask, adding 50mL of ultrapure water, adding 5mL of sodium dodecyl benzene sulfonate aqueous solution with the mass fraction of 10%, uniformly stirring, heating to 100 ℃, adjusting the pH value of the solution to 9 by adopting a NaOH solution with the mass fraction of 10%, and preparing a mixed solution A;
s2, mixing 20gAl (NO)3)3·9H2O and 7.5mL of TiCl4Adding the components into 100mL of ultrapure water, and uniformly stirring and mixing to prepare a mixed solution B;
s3, adding the mixed solution B in the step S2 into the mixed solution A in the step S1 at the heating temperature of 100 ℃ and the stirring speed of 120r/min at the speed of 1mL/S, controlling the pH value of the solution to be 9, and after the dropwise addition is finished, continuing to react for 20min at the temperature of 100 ℃ and the stirring speed of 120r/min to prepare a mixed solution C;
s4, filtering the mixed solution C obtained in the step S3, and washing filter residues by using deionized water until Cl is not detected-Until the end;
s5, placing the filter residue obtained in the step S4 in a vacuum drying oven, and performing vacuum drying at 100 ℃ for 60min to prepare a reflecting component;
s6, mixing 300g of InCl3And 18g SnCl4·5H2O togetherAdding the mixture into a mixed solvent consisting of 300mL of ultrapure water and 50mL of isopropanol, stirring for 10min at the speed of 180r/min in a water bath at the temperature of 80 ℃, adopting 25% by mass of concentrated ammonia water, adjusting the pH value of the solution to be 8, and continuously reacting for 60min at the temperature of 80 ℃ and the stirring speed of 180r/min to prepare a mixed solution D;
s7, filtering the mixed solution D in the step S6, and washing filter residues by using deionized water until 0.1mol/L AgNO is adopted3No Cl was detected in the solution-Until the end;
s8, adding the filter residue obtained In the step S7 into 100mL of isopropanol, stirring and carrying out azeotropic distillation at the speed of 180r/min In a water bath at 83 ℃, and preparing Sn-doped In after the isopropanol is evaporated to dryness2O3Preparing components;
s9, doping In with Sn In the step S82O3The components, the reflective component in the step S5 and 50mL of absolute ethyl alcohol are placed in a ball milling tank together, zirconium beads with the diameter of 3mm are adopted, the ball-to-material ratio is 5:1, and the mixture is stirred in the presence of N2Under protection, ball-milling for 120min, then placing in a vacuum furnace with the vacuum degree of 80Pa, the pressure of 15MPa and the preheating temperature of 900 ℃, heating at the speed of 5 ℃/min, keeping the temperature for 2h when the temperature is raised to 1100 ℃, then cooling, annealing at the speed of 5 ℃/min, keeping the temperature for 1h when the temperature is lowered to 600 ℃, and taking out when the temperature is lowered to room temperature to prepare a target material component for the TCO layer of the CdTe battery;
s10, adopting a magnetron sputtering deposition method to perform sputtering deposition on the target material component in the step S9 under the air pressure of 6 multiplied by 10-5Pa, sputtering power of 100W, Ar gas as sputtering gas and substrate temperature of 260 ℃, and depositing on the n-CdS layer 5 of the CdTe battery to prepare the TCO layer of the CdTe battery.
Example two:
the TCO layer of the CdTe battery comprises the following raw materials: 10g hollow glass micro-beads with average grain diameter less than or equal to 10um, 25gAl (NO)3)3·9H2O、7.5mLTiCl4、300gInCl3And 25g SnCl4·5H2O; wherein, TiCl4Has a density of 1.726g/cm3，7.5mLTiCl4Has a mass of 12.9 g;
the preparation method of the CdTe layer of the CdTe battery comprises the following steps:
s1, weighing 10g of hollow glass microspheres with the average particle size of less than or equal to 10um, adding the hollow glass microspheres into a 500mL four-neck flask, adding 50mL of ultrapure water, adding 10mL of sodium dodecyl benzene sulfonate aqueous solution with the mass fraction of 10%, uniformly stirring, heating to 110 ℃, adjusting the pH value of the solution to 10 by adopting a NaOH solution with the mass fraction of 10%, and preparing a mixed solution A;
s2, mixing 25gAl (NO)3)3·9H2O and 7.5mL of TiCl4Adding the components into 100mL of ultrapure water, and uniformly stirring and mixing to prepare a mixed solution B;
s3, adding the mixed solution B in the step S2 into the mixed solution A in the step S1 at the heating temperature of 110 ℃ and the stirring speed of 180r/min at the speed of 1mL/S, controlling the pH value of the solution to be 9, and after the dropwise addition is finished, continuing to react for 30min at the temperature of 110 ℃ and the stirring speed of 180r/min to prepare a mixed solution C;
s4, filtering the mixed solution C obtained in the step S3, and washing filter residues by using deionized water until Cl is not detected-Until the end;
s5, placing the filter residue obtained in the step S4 in a vacuum drying oven, and carrying out vacuum drying for 30min at 110 ℃ to prepare a reflecting component;
s6, mixing 300g of InCl3And 25g SnCl4·5H2Adding O into a mixed solvent composed of 300mL of ultrapure water and 50mL of isopropanol, stirring for 10min at the speed of 150r/min in a water bath at 90 ℃, adjusting the pH value of the solution to 9 by adopting 25% concentrated ammonia water, and continuously reacting for 60min at the temperature of 90 ℃ and the stirring speed of 180r/min to prepare a mixed solution D;
s7, filtering the mixed solution D in the step S6, and washing filter residues by using deionized water until 0.1mol/L AgNO is adopted3No Cl was detected in the solution-Until the end;
s8, adding the filter residue obtained In the step S7 into 100mL of isopropanol, stirring and carrying out azeotropic distillation at the speed of 180r/min In a water bath at the temperature of 90 ℃, and preparing Sn-doped In after the isopropanol is evaporated to dryness2O3Preparing components;
s9, preparing a target component for the TCO layer of the CdTe battery in the same preparation method as the step S9 in the first embodiment;
s10, preparing the CdTe layer of the CdTe battery by the same preparation method as the step S10 in the first embodiment.
Example three:
the TCO layer of the CdTe battery comprises the following raw materials: 10g hollow glass micro-beads with average grain diameter less than or equal to 1um and 20gAl (NO)3)3·9H2O、10mLTiCl4、300gInCl3And 10g SnCl4·5H2O; wherein, TiCl4Has a density of 1.726g/cm3，10mLTiCl4Has a mass of 17.3 g;
the preparation method of the CdTe layer of the CdTe battery comprises the following steps:
s1, weighing 10g of hollow glass microspheres with the average particle size of less than or equal to 1um, adding the hollow glass microspheres into a 500mL four-neck flask, adding 50mL of ultrapure water, adding 15mL of sodium dodecyl benzene sulfonate aqueous solution with the mass fraction of 10%, uniformly stirring, heating to 120 ℃, adjusting the pH value of the solution to 8 by adopting a NaOH solution with the mass fraction of 10%, and preparing a mixed solution A;
s2, mixing 20gAl (NO)3)3·9H2O and 7.5mL of TiCl4Adding the components into 100mL of ultrapure water, and uniformly stirring and mixing to prepare a mixed solution B;
s3, adding the mixed solution B in the step S2 into the mixed solution A in the step S1 at the heating temperature of 120 ℃ and the stirring speed of 120r/min at the speed of 1mL/S, controlling the pH value of the solution to be 8, and after the dropwise addition is finished, continuing to react for 30min at the temperature of 120 ℃ and the stirring speed of 180r/min to prepare a mixed solution C;
s4, filtering the mixed solution C obtained in the step S3, and washing filter residues by using deionized water until Cl is not detected-Until the end;
s5, placing the filter residue obtained in the step S4 in a vacuum drying oven, and performing vacuum drying at 90 ℃ for 90min to prepare a reflecting component;
s6, mixing300gInCl3And 10g SnCl4·5H2Adding O into a mixed solvent composed of 300mL of ultrapure water and 50mL of isopropanol, stirring for 10min at the speed of 150r/min in a water bath at 70 ℃, adjusting the pH value of the solution to 10 by adopting 25% concentrated ammonia water, and continuously reacting for 90min at the temperature of 70 ℃ and the stirring speed of 150r/min to prepare a mixed solution D;
s7, filtering the mixed solution D in the step S6, and washing filter residues by using deionized water until 0.1mol/L AgNO is adopted3No Cl was detected in the solution-Until the end;
s8, adding the filter residue obtained In the step S7 into 100mL of isopropanol, stirring and carrying out azeotropic distillation at the speed of 180r/min In a water bath at 83 ℃, and preparing Sn-doped In after the isopropanol is evaporated to dryness2O3Preparing components;
s9, preparing a target component for the TCO layer of the CdTe battery in the same preparation method as the step S9 in the first embodiment;
s10, preparing the CdTe layer of the CdTe battery by the same preparation method as the step S10 in the first embodiment.
Example four:
the TCO layer of the CdTe battery comprises the following raw materials: 10g hollow glass micro-beads with average grain diameter less than or equal to 10um and 20gAl (NO)3)3·9H2O、6mLTiCl4、300gInCl3And 22g SnCl4·5H2O; wherein, TiCl4Has a density of 1.726g/cm3，6mLTiCl4The mass of (2) is 10.4 g;
the preparation method of the CdTe layer of the CdTe battery comprises the following steps:
s1, weighing 10g of hollow glass microspheres with the average particle size of less than or equal to 10um, adding the hollow glass microspheres into a 500mL four-neck flask, adding 50mL of ultrapure water, adding 5mL of sodium dodecyl benzene sulfonate aqueous solution with the mass fraction of 10%, uniformly stirring, heating to 100 ℃, adjusting the pH value of the solution to 9 by adopting a NaOH solution with the mass fraction of 10%, and preparing a mixed solution A;
s2, mixing 20gAl (NO)3)3·9H2O and 6ml of TiCl4Adding the components into 100mL of ultrapure water, and uniformly stirring and mixing to prepare a mixed solution B;
s3, adding the mixed solution B in the step S2 into the mixed solution A in the step S1 at the heating temperature of 100 ℃ and the stirring speed of 120r/min at the speed of 1mL/S, controlling the pH value of the solution to be 9, and after the dropwise addition is finished, continuing to react for 20min at the temperature of 100 ℃ and the stirring speed of 120r/min to prepare a mixed solution C;
s4, filtering the mixed solution C obtained in the step S3, and washing filter residues by using deionized water until Cl is not detected-Until the end;
s5, placing the filter residue obtained in the step S4 in a vacuum drying oven, and performing vacuum drying at 100 ℃ for 60min to prepare a reflecting component;
s6, mixing 300g of InCl3And 22g SnCl4·5H2Adding O into a mixed solvent composed of 300mL of ultrapure water and 50mL of isopropanol, stirring for 10min at a speed of 180r/min in a water bath at 80 ℃, adjusting the pH value of the solution to 8 by adopting 25% concentrated ammonia water, and continuously reacting for 60min at a temperature of 80 ℃ and a stirring speed of 180r/min to prepare a mixed solution D;
s7, filtering the mixed solution D in the step S6, and washing filter residues by using deionized water until 0.1mol/L AgNO is adopted3No Cl was detected in the solution-Until the end;
s8, adding the filter residue obtained In the step S7 into 100mL of isopropanol, stirring and carrying out azeotropic distillation at the speed of 180r/min In a water bath at 83 ℃, and preparing Sn-doped In after the isopropanol is evaporated to dryness2O3Preparing components;
s9, preparing a target component for the TCO layer of the CdTe battery in the same preparation method as the step S9 in the first embodiment;
s10, preparing the CdTe layer of the CdTe battery by the same preparation method as the step S10 in the first embodiment.
Example five:
the TCO layer of the CdTe battery comprises the following raw materials: 10g hollow glass microspheres with average grain diameter less than or equal to 10um and 25gAl (N)O3)3·9H2O、10mLTiCl4、300gInCl3And 20g SnCl4·5H2O; wherein, TiCl4Has a density of 1.726g/cm3，10mLTiCl4Has a mass of 17.3 g;
the preparation method of the CdTe layer of the CdTe battery comprises the following steps:
s1, weighing 10g of hollow glass microspheres with the average particle size of less than or equal to 10um, adding the hollow glass microspheres into a 500mL four-neck flask, adding 50mL of ultrapure water, adding 10mL of sodium dodecyl benzene sulfonate aqueous solution with the mass fraction of 10%, uniformly stirring, heating to 110 ℃, adjusting the pH value of the solution to 10 by adopting a NaOH solution with the mass fraction of 10%, and preparing a mixed solution A;
s2, mixing 25gAl (NO)3)3·9H2O and 10ml of TiCl4Adding the components into 100mL of ultrapure water, and uniformly stirring and mixing to prepare a mixed solution B;
s3, adding the mixed solution B in the step S2 into the mixed solution A in the step S1 at the heating temperature of 110 ℃ and the stirring speed of 180r/min at the speed of 1mL/S, controlling the pH value of the solution to be 9, and after the dropwise addition is finished, continuing to react for 30min at the temperature of 110 ℃ and the stirring speed of 180r/min to prepare a mixed solution C;
s4, filtering the mixed solution C obtained in the step S3, and washing filter residues by using deionized water until Cl is not detected-Until the end;
s5, placing the filter residue obtained in the step S4 in a vacuum drying oven, and carrying out vacuum drying for 30min at 110 ℃ to prepare a reflecting component;
s6, mixing 300g of InCl3And 20g SnCl4·5H2Adding O into a mixed solvent composed of 300mL of ultrapure water and 50mL of isopropanol, stirring for 10min at the speed of 150r/min in a water bath at 90 ℃, adjusting the pH value of the solution to 9 by adopting 25% concentrated ammonia water, and continuously reacting for 60min at the temperature of 90 ℃ and the stirring speed of 180r/min to prepare a mixed solution D;
s7, filtering the mixed solution D in the step S6, and washing filter residues by using deionized water until the filter residues are collectedWith 0.1mol/L AgNO3No Cl was detected in the solution-Until the end;
s8, adding the filter residue obtained In the step S7 into 100mL of isopropanol, stirring and carrying out azeotropic distillation at the speed of 180r/min In a water bath at the temperature of 90 ℃, and preparing Sn-doped In after the isopropanol is evaporated to dryness2O3Preparing components;
s9, preparing a target component for the TCO layer of the CdTe battery in the same preparation method as the step S9 in the first embodiment;
s10, preparing the CdTe layer of the CdTe battery by the same preparation method as the step S10 in the first embodiment.
Example six:
the TCO layer of the CdTe battery comprises the following raw materials: 10g hollow glass micro-beads with average grain diameter less than or equal to 1um and 20gAl (NO)3)3·9H2O、8mLTiCl4、300gInCl3And 15g SnCl4·5H2O; wherein, TiCl4Has a density of 1.726g/cm3，8mLTiCl4The mass of (2) is 13.8 g;
the preparation method of the CdTe layer of the CdTe battery comprises the following steps:
s1, weighing 10g of hollow glass microspheres with the average particle size of less than or equal to 1um, adding the hollow glass microspheres into a 500mL four-neck flask, adding 50mL of ultrapure water, adding 15mL of sodium dodecyl benzene sulfonate aqueous solution with the mass fraction of 10%, uniformly stirring, heating to 120 ℃, adjusting the pH value of the solution to 8 by adopting a NaOH solution with the mass fraction of 10%, and preparing a mixed solution A;
s2, mixing 20gAl (NO)3)3·9H2O and 8ml of TiCl4Adding the components into 100mL of ultrapure water, and uniformly stirring and mixing to prepare a mixed solution B;
s3, adding the mixed solution B in the step S2 into the mixed solution A in the step S1 at the heating temperature of 120 ℃ and the stirring speed of 120r/min at the speed of 1mL/S, controlling the pH value of the solution to be 8, and after the dropwise addition is finished, continuing to react for 30min at the temperature of 120 ℃ and the stirring speed of 180r/min to prepare a mixed solution C;
s4, filtering the mixed solution C in the step S3And cleaning the filter residue by using deionized water until no Cl is detected-Until the end;
s5, placing the filter residue obtained in the step S4 in a vacuum drying oven, and performing vacuum drying at 90 ℃ for 90min to prepare a reflecting component;
s6, mixing 300g of InCl3And 15g SnCl4·5H2Adding O into a mixed solvent composed of 300mL of ultrapure water and 50mL of isopropanol, stirring for 10min at the speed of 150r/min in a water bath at 70 ℃, adjusting the pH value of the solution to 10 by adopting 25% concentrated ammonia water, and continuously reacting for 90min at the temperature of 70 ℃ and the stirring speed of 150r/min to prepare a mixed solution D;
s7, filtering the mixed solution D in the step S6, and washing filter residues by using deionized water until 0.1mol/L AgNO is adopted3No Cl was detected in the solution-Until the end;
s8, adding the filter residue obtained In the step S7 into 100mL of isopropanol, stirring and carrying out azeotropic distillation at the speed of 180r/min In a water bath at 83 ℃, and preparing Sn-doped In after the isopropanol is evaporated to dryness2O3Preparing components;
s9, preparing a target component for the TCO layer of the CdTe battery in the same preparation method as the step S9 in the first embodiment;
s10, preparing the CdTe layer of the CdTe battery by the same preparation method as the step S10 in the first embodiment.
Comparative example one:
the TCO layer of the CdTe battery comprises the following raw materials: 300gInCl3And 18g SnCl4·5H2O；
The preparation method of the CdTe layer of the CdTe battery comprises the following steps:
s1, mixing 300g of InCl3And 18g SnCl4·5H2Adding O into a mixed solvent consisting of 300mL of ultrapure water and 50mL of isopropanol, stirring for 10min at the speed of 180r/min in a water bath at the temperature of 80 ℃, adopting 25% by mass of concentrated ammonia water, adjusting the pH value of the solution to be 8, continuously reacting for 60min at the temperature of 80 ℃ and the stirring speed of 180r/min, and preparing a mixed solution A;
s2, filtering the mixed solution A obtained in the step S1, and washing filter residues by using deionized water until 0.1mol/L AgNO is adopted3No Cl was detected in the solution-Until the end;
s3, adding the filter residue obtained In the step S2 into 100mL of isopropanol, stirring and carrying out azeotropic distillation at the speed of 180r/min In a water bath at 83 ℃, and preparing Sn-doped In after the isopropanol is evaporated to dryness2O3Preparing components;
s4, preparing a target component for the TCO layer of the CdTe battery in the same preparation method as the step S9 in the first embodiment;
s10, preparing the CdTe layer of the CdTe battery by the same preparation method as the step S10 in the first embodiment.
Comparative example two:
the TCO layer of the CdTe battery comprises the following raw materials: 300gInCl3And 25g SnCl4·5H2O；
The preparation method of the CdTe layer of the CdTe battery comprises the following steps:
s1, mixing 300g of InCl3And 25g SnCl4·5H2Adding O into a mixed solvent composed of 300mL of ultrapure water and 50mL of isopropanol, stirring for 30min at the speed of 150r/min in a 70 ℃ water bath, adjusting the pH value of the solution to 8 by adopting 25% concentrated ammonia water, and continuously reacting for 90min at the temperature of 80 ℃ and the stirring speed of 180r/min to prepare a mixed solution A;
s2, filtering the mixed solution A obtained in the step S1, and washing filter residues by using deionized water until 0.1mol/L AgNO is adopted3No Cl was detected in the solution-Until the end;
s3, adding the filter residue obtained In the step S2 into 100mL of isopropanol, stirring and carrying out azeotropic distillation at the speed of 180r/min In a water bath at 83 ℃, and preparing Sn-doped In after the isopropanol is evaporated to dryness2O3Preparing components;
s4, preparing a target component for the TCO layer of the CdTe battery in the same preparation method as the step S9 in the first embodiment;
s10, preparing the CdTe layer of the CdTe battery by the same preparation method as the step S10 in the first embodiment.
And (3) performance testing:
firstly, testing the average light transmittance of the CdTe layer of the CdTe battery prepared in the embodiment and the comparative example in the range of 400-760nm by using a light transmittance tester, wherein the test result is shown in Table 1;
TABLE 1
Secondly, testing the average reflectivity of the CdTe layer of the CdTe battery prepared in the embodiment and the comparative example in the range of 780-1100nm by using a reflectivity tester, wherein the test result is shown in Table 2;
TABLE 2
| Sample (I) | Average reflectance (%) in the range of 780-1100nm |
| Example one | 93 |
| Example two | 89 |
| EXAMPLE III | 91 |
| Example four | 92 |
| EXAMPLE five | 89 |
| EXAMPLE six | 92 |
| Comparative example 1 | 11 |
| Comparative example No. two | 9 |
Thirdly, testing the TCO layer of the CdTe battery prepared in the embodiment and the comparative example by using a reflectivity tester, wherein the average reflectivity of the TCO layer of the CdTe battery is within the wavelength range of 10-400nm, and the test result is shown in Table 3;
TABLE 3
Claims (5)
1. A CdTe cell TCO layer capable of reflecting infrared rays and ultraviolet rays is characterized in that: the TCO layer of the CdTe battery comprises the following raw materials in parts by weight: 10 parts of hollow glass beads and 20-25 parts of Al (NO)3)3·9H2O, 10.4-17.3 parts of TiCl4300 parts of InCl3With 15-25 parts of SnCl4·5H2O。
2. The TCO layer of CdTe cell according to claim 1, characterized in that: the average grain size of the hollow glass beads is less than or equal to 10um or less than or equal to 1 um.
3. The TCO layer of CdTe cell according to claim 1, characterized in that: the preparation method of the CdTe battery TCO layer comprises the following steps:
s1, 10 parts of hollow glass beads and 20-25 parts of Al (NO)3)3·9H2O, 10.4-17.3 parts of TiCl4As raw materials, preparing a reflecting component;
s2, using 300 parts of InCl3With 15-25 parts of SnCl4·5H2O is used as a raw material to prepare Sn doped In2O3Preparing components;
s3, doping the reflecting component In the step S1 and the Sn doped In the step S22O3Placing the components and 50mL of absolute ethyl alcohol into a ball milling tank for ball milling, then placing the ball milling tank and the absolute ethyl alcohol into a vacuum furnace with the vacuum degree of 80Pa, heating the ball milling tank at the heating speed of 5 ℃/min, keeping the temperature for 2h when the temperature is raised to 1100 ℃, then cooling the ball milling tank, taking the ball milling tank out when the temperature is lowered to 600 ℃, and taking the ball milling tank out when the temperature is lowered to room temperature to prepare a target material component for the TCO layer of the CdTe battery;
s4, adopting a magnetron sputtering deposition method to perform sputtering deposition on the target material component in the step S3 under the air pressure of 6 multiplied by 10-5Pa, sputtering power of 100W, Ar gas as sputtering gas and substrate temperature of 260 ℃, and depositing on the n-CdS layer of the CdTe battery to prepare the TCO layer of the CdTe battery.
4. The CdTe cell TCO layer of claim 3, wherein: in the step S3, zirconium beads with the diameter of 3mm are adopted, and the reaction temperature is N2Ball milling under protection.
5. The CdTe cell TCO layer of claim 3, wherein: the preheating temperature of the vacuum furnace in the step S3 is 900 ℃.
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