CN109887982B - Display module, manufacturing method thereof and display device - Google Patents

Display module, manufacturing method thereof and display device Download PDF

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Publication number
CN109887982B
CN109887982B CN201910213038.XA CN201910213038A CN109887982B CN 109887982 B CN109887982 B CN 109887982B CN 201910213038 A CN201910213038 A CN 201910213038A CN 109887982 B CN109887982 B CN 109887982B
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light emitting
island
dam
islands
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CN109887982A (en
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刘晓云
王小芬
樊燕
靳倩
康亮亮
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Abstract

A display module and a manufacturing method thereof and a display device are provided, wherein the module comprises: a substrate; a plurality of islands distributed in an array and spaced apart from each other, disposed on the substrate; a plurality of bridges disposed on the substrate between and connecting the plurality of islands; a light emitting layer disposed on the islands and the bridges; and a first electrode layer disposed on the light emitting layer; the bridge is provided with a first connecting circuit layer, a blocking dam and a pixel defining layer corresponding to the island, the blocking dam is located between the pixel defining layer and the first connecting circuit layer and blocks the light emitting layer, the blocking dam comprises an insulating layer and a second connecting circuit layer located on the insulating layer, and the second connecting circuit layer is connected with the first electrode layer and the first connecting circuit layer. The barrier dam is protruding structure, can adopt conventional mask preparation luminescent layer, and the barrier dam cuts off the luminescent layer because of the arch to this stops water oxygen to transmit to the island part along the luminescent layer, has effectively prevented water oxygen erosion island part structure's problem, can reduce the cost of mask.

Description

Display module, manufacturing method thereof and display device
Technical Field
The present disclosure relates to display devices, and particularly to a display module, a method for manufacturing the display module, and a display device.
Background
Currently, typical tensile structures include hard film buckling structures, island bridge structures, and in addition, open mesh structures. Island bridge structures are widely favored because of their unique tensile properties. The display unit is arranged in the island, the connecting line is arranged at the bridge, and when the display unit is stretched, the stretching amount of the bridge is larger than that of the island, so that the display unit in the island is not easily damaged, and the bridge is stretched through the hollow area. Therefore, in the stretchable display panel in the prior art, the encapsulation film layer is not disposed on the substrate of the hollow area, and only the encapsulation film layer is disposed on the sidewall of the hollow area.
In the stretchable display panel in the prior art, in the stretching process, the encapsulation layer on the inner side surface of the groove of the hollow area is broken, so that the encapsulation performance is reduced. In order to prevent water and oxygen from entering the light-emitting layers in the islands, it is necessary to evaporate the light-emitting layers using an island-shaped high-precision metal mask so that the light-emitting layers are evaporated only on the islands when manufacturing the display panel. Island-shaped high accuracy metal mask plate for its design degree of difficulty and cost of manufacture further improve owing to the existence of fretwork unit, lead to display panel cost to improve, and reduced display panel's product yield. Therefore, in order to reduce the cost of the stretchable display panel, a structure and a manufacturing method of a novel stretchable display panel are urgently needed to be provided.
Disclosure of Invention
In order to solve at least one of the above technical problems, the present disclosure provides a stretchable display module, which can solve the problems of high manufacturing cost and high design difficulty of a mask for evaporating a light emitting layer.
The invention further provides a manufacturing method of the stretchable display module and display equipment.
The embodiment of the invention provides a stretchable display module, which comprises: a substrate having a display region and a non-display region; a plurality of islands distributed in an array and spaced apart from each other, disposed on the display area of the substrate; a plurality of bridges disposed on the non-display area of the substrate between the plurality of islands and connecting the plurality of islands; a light emitting layer disposed on the islands and the bridges; and a first electrode layer disposed on the light emitting layer; wherein, the bridge including with the island corresponds first connecting circuit layer and separation dam, the separation dam is located the island with between the first connecting circuit layer, and cut off the luminescent layer, the separation dam includes the insulating layer and is located second connecting circuit layer on the insulating layer, second connecting circuit layer is connected first electrode layer with first connecting circuit layer.
Alternatively, a side of the barrier dam facing the island blocks the light emitting layer, and a side of the second connection line layer facing the island is exposed with respect to the light emitting layer and connected to the first electrode layer.
Optionally, a side of the second connection line layer facing away from the island is butted against a side of the first connection line layer.
Optionally, a side of the barrier dam facing the island, the insulating layer being recessed with respect to the second connection wiring layer.
Optionally, the barrier dam further comprises: and the anti-oxidation layer is arranged on the second connecting line layer and is used for performing anti-oxidation protection on the second connecting line layer.
Optionally, a side of the blocking dam facing away from the island also blocks the light emitting layer, that is, the oxidation preventing layer protrudes relative to the first connecting line layer, and the step structure formed by the oxidation preventing layer and the first connecting line layer blocks the light emitting layer, so that the light emitting layer breaks at the place.
Optionally, the slope angle of the side face, facing the island, of the second connection line layer is 85-95 degrees.
Optionally, the slope angle of the side surface of the second connection circuit layer facing the first connection circuit layer is 85-95 degrees.
Optionally, a thickness of the insulating layer is not less than a thickness of the light emitting layer.
Optionally, the bridge further includes a groove for achieving stretching, the first connection wiring layer and the barrier dam corresponding to each island are separated by the groove, and the light emitting layer and the first electrode layer are also provided on the bottom wall of the groove.
Optionally, the light emitting layer on the bottom wall of the groove is disconnected from the light emitting layer outside the groove.
Optionally, the first electrode layer on the bottom wall of the groove is disconnected from the first electrode layer outside the groove.
The display device provided by the embodiment of the invention comprises the stretchable display module in any one of the embodiments.
The manufacturing method of the stretchable display module provided by the embodiment of the invention comprises the following steps:
forming a blocking dam and a first connection line layer corresponding to an island on a non-display region, the blocking dam being positioned between the first connection line layer and the island, the blocking dam including an insulating layer and a second connection line layer formed on the insulating layer and connected to the first connection line layer;
forming a light emitting layer on the display area and the non-display area, the blocking dam blocking the light emitting layer and exposing the second connection line layer with respect to the light emitting layer;
forming a first electrode layer on the display region and the non-display region, the first electrode layer being connected with the exposed region of the second connection line layer.
Alternatively, a side of the barrier dam facing the island blocks the light emitting layer, and a side of the second connection line layer facing the island is exposed with respect to the light emitting layer to be connected to the first electrode layer.
Optionally, the barrier dam further includes an oxidation prevention layer formed on the second connection line layer, the insulating layer, the second connection line layer and the oxidation prevention layer are manufactured by a one-step composition process, and an etching rate of the insulating layer is greater than an etching rate of the oxidation prevention layer and an etching rate of the second connection line layer, so that a side surface of the insulating layer facing the island is recessed relative to the oxidation prevention layer and the second connection line layer.
Optionally, before the step of forming the first connection line layer and the blocking dam, the manufacturing method further includes:
a first electrode lead layer and a flat layer corresponding to an island are sequentially formed on a non-display area, the flat layer covers the first electrode lead layer, and a through hole exposing the first electrode lead layer is formed on the flat layer.
Optionally, in the step of forming the first connection wiring layer, the first connection wiring layer and the first electrode lead layer are connected through a via hole.
Alternatively, the two planarization layers between adjacent two islands may be connected together when formed, the two first electrode lead layers may be connected together when formed, and the two first connection wiring layers may be connected together when formed.
Optionally, between the steps of forming the barrier dam and the light emitting layer, the manufacturing method further includes:
forming a groove on the non-display region, the groove separating the first connection wiring layer, the planarization layer, and the first electrode lead layer, the substrate being exposed on a bottom wall of the groove;
in the step of forming the light emitting layer and the first electrode layer, the light emitting layer and the first electrode layer are also formed in this order on the bottom wall of the groove.
Compared with the prior art, the stretchable display module provided by the embodiment of the invention has the advantages that the blocking dam is positioned between the pixel defining layer and the first connecting line layer and is of a convex structure, the luminescent layer can be manufactured by adopting a conventional mask, the manufactured luminescent layer is formed on the island and the bridge, and the blocking dam blocks the luminescent layer due to the protrusion, so that the luminescent layer is formed into two mutually independent parts at two sides of the blocking dam, and the transmission of water and oxygen from the stretchable area to the island part along the luminescent layer is prevented, the problem that the island part structure is corroded by the water and oxygen is effectively solved, the cost of the mask can be reduced, and the first electrode layer is communicated with the first connecting line layer through the connection of the second connecting line layer in the blocking dam.
Of course, the structure can also be applied to a conventional non-stretchable display module.
Additional features and advantages of the disclosure will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the disclosure. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the embodiments herein and are incorporated in and constitute a part of this specification, illustrate embodiments herein and are not to be construed as limiting the embodiments herein.
Fig. 1 to 9 are schematic partial sectional views of a front view structure illustrating a manufacturing process of a stretchable display module according to an embodiment of the invention;
FIG. 10 is a schematic diagram illustrating a top view of a stretchable display module according to an embodiment of the invention;
FIG. 11 is a flowchart illustrating a method for manufacturing a stretchable display module according to an embodiment of the present invention;
fig. 12 is a cross-sectional partial schematic view of a stretchable display module according to the related art.
Wherein, the correspondence between the reference numbers and the part names in fig. 1 to 9 is:
100 substrates, 1 circuit structure layer, 11 islands, 12 bridges, 2 third electrode layers, 3 first electrode lead layers, 4 flat layers, 5 second electrode layers, 6 first connecting circuit layers, 7 pixel defining layers, 8 blocking dams, 81 insulating layers, 82 second connecting circuit layers, 83 anti-oxidation layers, 9 grooves, 201 light-emitting layers, 202 first electrode layers and 203 packaging layers.
Detailed Description
To make the objects, technical solutions and advantages of the present invention more apparent, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that the embodiments and features of the embodiments in the present application may be arbitrarily combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, however, the present disclosure may be practiced otherwise than as specifically described herein, and thus the scope of the present disclosure is not limited by the specific embodiments disclosed below.
An island-bridge structure is shown in fig. 12, a substrate 300 is provided with a circuit structure layer 301, the circuit structure layer 301 is provided with a plurality of islands 302 and bridges 303, the islands 302 are distributed in an array and separated from each other, the bridges 303 connect the islands 302, a drain layer 304, an anode layer 305 and a light emitting layer 306 are sequentially arranged on the islands 302, the bridges 303 are provided with grooves 307 for stretching, and a cathode lead layer 308, a flat layer 309, a pixel definition layer 310 and a first connection circuit layer 311 corresponding to the islands 302, the pixel definition side layer 310 is located between the first connection circuit layer 311 and the corresponding islands 302, the first connection circuit layer 311 is connected with the cathode lead layer 308 through via holes on the flat layer 309, and finally a cathode layer 312 is manufactured, the cathode layer 312 is directly connected with the upper surface of the first connection circuit layer 311, and finally a packaging layer 313 is formed.
Example one
As shown in fig. 6 to 8, the stretchable display module according to the embodiment of the present invention includes: a substrate 100; a plurality of islands 11 distributed in an array and spaced apart from each other, disposed on the substrate 100; a plurality of bridges 12 provided on the substrate 100 between the plurality of islands 11 and connecting the plurality of islands 11; a light-emitting layer 201 disposed on the islands 11 and the bridges 12; and a first electrode layer 202 provided over the light-emitting layer 201; wherein, any bridge 12 includes two sets of first connecting line layers 6, a blocking dam 8 and a pixel defining layer 7, the blocking dam 8 is located between the pixel defining layer 7 and the first connecting line layer 6 and blocks the light emitting layer 201, the blocking dam 8 includes an insulating layer 81 and a second connecting line layer 82 located on the insulating layer 81, and the second connecting line layer 82 connects the first electrode layer 202 and the first connecting line layer 6. Only the light emitting layer 201 on the island 11 emits light, the light emitting layer on the bridge 12 does not emit light, and the light emitting layer 201 may be an organic light emitting layer.
This tensile display module assembly, separation dam 8 is located between pixel definition layer 7 and the first connecting line layer 6, be protruding structure, can adopt conventional mask preparation luminescent layer 201, the luminescent layer 201 of preparation forms on island 11 and bridge 12, separation dam 8 cuts off luminescent layer 201 because of the arch, make luminescent layer 201 be mutually independent two parts on separation dam 8 both sides, thereby prevent the regional transmission of luminous layer 201 to island 11 part along luminous layer 201 of aquatic oxygen certainly can stretch, the problem of island part structure is eroded to aquatic oxygen has effectively been prevented, can reduce the cost of mask, connect first electrode layer 202 and first connecting line layer 6 through second connecting line layer 82 in the separation dam 8, realize first electrode layer 202 and first connecting line layer 6 intercommunication. The barrier dam 8 also blocks the first electrode layer 202.
Wherein, the side of the second connection line layer 82 facing the pixel defining layer 7 is exposed relative to the light emitting layer 201 and connected to the first electrode layer 202, and the side of the second connection line layer 82 facing the first connection line layer 6 is connected to the first connection line layer 6.
Due to the existence of the barrier dam 8, when the light-emitting layer 201 is formed by evaporation, the light-emitting layer 201 is disconnected at the barrier dam 8 due to the existence of a step (which can also be understood as a stepped fault), the surface of the light-emitting layer 201 between the barrier dam 8 and the pixel defining layer 7 is lower than the surface of the second connection line layer 82 on the barrier dam 8, that is, the side of the second connection line layer 82 facing the pixel defining layer 7 is exposed relative to the light-emitting layer 201, at this time, the first electrode layer 202 is evaporated, and the first electrode layer 202 evaporated on the light-emitting layer 201 between the barrier dam 8 and the pixel defining layer 7 is just in butt joint communication with the second connection line layer 82, so that the first electrode layer 202 is connected with the second connection line layer 82.
When the barrier dam 8 is manufactured, the barrier dam can be manufactured through a one-time composition process, a first film layer for manufacturing the insulating layer 81 is deposited, a second film layer for manufacturing the second connecting circuit layer 82 is deposited, the thickness of the first film layer and the thickness of the first film layer are set to be the same as the thickness of the first connecting circuit layer 6, photoresist is coated on the second film layer and exposed, an unexposed area is formed between the first connecting circuit layer 6 and the pixel defining layer 7, other areas form an exposed area, the edges of the unexposed area and the edges of the first connecting circuit layer 6, which are adjacent to each other, are aligned, then development and etching are carried out, the first film layer and the second film layer of the exposed area are etched in sequence, the barrier dam 8 is manufactured, and the second connecting circuit layer 82 is located beside the first connecting circuit layer 6 and is connected and communicated with the first connecting circuit layer 6.
In order to ensure smooth connection between the evaporated first electrode layer 202 and the second connection line layer 82, the thickness of the insulating layer 81 may be set to be not less than the thickness of the light emitting layer 201. Preferably, the thickness of the insulating layer 81 may be set to be equal to the thickness of the light emitting layer 201, the upper surface of the light emitting layer 201 between the insulating layer 81 and the pixel defining layer 7 is coplanar with the lower surface of the second connection line layer 82, and the first electrode layer 202 is directly connected to the second connection line layer 82 after evaporation.
On the side of the blocking dam 8 facing the pixel defining layer 7, the insulating layer 81 may be recessed with respect to the second connection line layer 82, i.e., a recessed portion is formed during etching, so as to prevent the insulating layer 81 from affecting the connection between the first electrode layer 202 and the second connection line layer 82. Moreover, the slope angle of the side surface of the second connection line layer 82 facing the pixel defining layer 7 is 85 to 95 degrees, and the slope angle of the side surface of the second connection line layer 82 facing the first connection line layer 6 is also set to 85 to 95 degrees.
Specifically, the thickness of the insulating layer 81 is set to be 1000 to 3000 angstroms, and the thickness of the second connection line layer 82 is set to be 100 to 5000 angstroms. The second connection line layer 82 may be made of metal aluminum, metal titanium, or metal molybdenum, and may be etched by a dry etching process. The insulating layer 81 may be made of silicon oxide, silicon nitride, or the like.
Optionally, the barrier dam 8 further comprises: and an oxidation preventing layer 83 provided on the second connection wire layer 82 for protecting the second connection wire layer 82 from oxidation. The material of the oxidation preventing layer 83 may be silicon oxide, silicon nitride, or the like. An orthographic projection of the oxidation preventing layer 83 on the substrate 100 is set to coincide with an orthographic projection of the second connection wiring layer 82 on the substrate 100. The side surface of the insulating layer 81 may be a straight surface or an inclined surface.
Further, as shown in fig. 6 to 10, the bridge 12 further includes grooves 9 for achieving stretching, and each set of the pixel defining layer 7, the first connection wiring layer 6, and the barrier dam 8 corresponding to each island 11 is partitioned by the grooves 9, and a light emitting layer 201 and a first electrode layer 202 are also provided on the bottom wall of the grooves 9. The light-emitting layer 201 on the bottom wall of the groove 9 is disconnected from the light-emitting layer 201 outside the groove 9, and the first electrode layer 202 on the bottom wall of the groove 9 is disconnected from the first electrode layer 202 outside the groove 9.
A circuit structure layer 1 including a driver circuit, a start circuit, and the like is provided on the substrate 100, and islands 11 and bridges 12 are provided on the circuit structure layer 1. Wherein, the island 11 includes a third electrode layer 2, the third electrode layer 2 may be a drain, a second electrode layer 5 is disposed on the third electrode layer 2, the second electrode layer 5 may be an anode, and the first electrode layer 202 may be a cathode; the bridge 12 further includes a first electrode lead layer 3 (the first electrode lead layer 3 between two adjacent islands can be connected together when formed and is finally divided into two parts when the groove 9 is formed) and a flat layer 4 (the flat layer 4 between two adjacent islands can be connected together when formed and is finally divided into two parts when the groove 9 is formed) corresponding to the island 11, the flat layer 4 covers the first electrode lead layer 3, the first connection wiring layer 6, the blocking dam 8 and the pixel defining layer 7 are all provided on the flat layer 4, the groove 9 is opened to the flat layer 4, the circuit structure layer 1 is exposed on the bottom wall of the groove 9, after the first electrode layer 202 is fabricated, an encapsulation layer 203 is formed, the encapsulation layer 203 may be fabricated on the inner side surface and the outer end surface of the groove 9, the barrier dam 8, the pixel defining layer 7, and the first connection wiring layer 6 may be formed by evaporation, and are all raised on the flat layer 4. The first connecting wiring layer 6 between two adjacent islands 11 may be connected together when formed and finally separated into two parts when forming the recess 9.
On any bridge 12 structure, the first electrode lead layer 3, the flat layer 4, the first connection circuit layer 6, the barrier dam 8 and the pixel defining layer 7 are symmetrically arranged on two sides of the groove 9.
Example two
The display device (not shown in the figures) provided by the embodiment of the invention comprises the stretchable display module described in any one of the above embodiments.
The display device provided by the invention has all the advantages of the stretchable display module described in any of the above embodiments, and is not described herein again.
The display device may be: any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.
EXAMPLE III
As shown in fig. 11, the method for manufacturing a stretchable display module according to an embodiment of the present invention includes:
s100: as shown in fig. 6, the barrier dam 8 and the first connection wiring layer 6 corresponding to the island 11 are sequentially formed on the non-display area, the barrier dam 8 includes an insulating layer 81 and a second connection wiring layer 82, and the second connection wiring layer 82 is formed on the insulating layer 81 and connected to the first connection wiring layer 6;
s200: as shown in fig. 7, the light emitting layer 201 is formed on the display area and the non-display area, the blocking dam 8 blocks the light emitting layer 201 and exposes the second connection wiring layer 82 with respect to the light emitting layer 201;
s300: as shown in fig. 8, a first electrode layer 202 is formed on the display region and the non-display region, and the first electrode layer 202 is connected to the exposed region of the second connection wiring layer 82.
This manufacturing method of tensile display module assembly, the barrier dam 8 is located between island 11 and the first connecting line layer 6, be protruding structure, can adopt conventional mask preparation luminescent layer 201, the luminescent layer 201 of preparation forms on display area and non-display area, barrier dam 8 cuts off luminescent layer 201 because of the arch, make luminescent layer 201 be two parts of mutual independence at barrier dam 8 both sides, thereby prevent the regional transmission of luminous layer 201 to island 11 part along the stretching, effectively prevented the problem that water oxygen from eroding island part structure, can reduce the cost of mask.
Wherein, the side of the blocking dam 8 facing the island 11 blocks the light emitting layer 201, the side of the second connection line layer 82 facing the island 11 is exposed relative to the light emitting layer 201 and connected with the first electrode layer 202, and the side of the second connection line layer 82 facing the first connection line layer 6 is connected with the first connection line layer 6.
The barrier dam 8 protrudes from the flat layer 4, the light emitting layer 201 is blocked at the barrier dam 8 to form a step structure (i.e. the light emitting layer 201 is broken by the barrier dam 8), the second connection line layer 82 is higher than the light emitting layer 201 between the barrier dam 8 and the island 7, at this time, the side surface of the second connection line layer 82 facing the island is exposed relative to the light emitting layer 201, after the first electrode layer 202 is manufactured, in the portion between the island 11 and the barrier dam 8, the first electrode layer 202 is electrically connected with the second connection line layer 82 through the exposed side surface of the second connection line layer 82, and when the barrier dam 8 is manufactured, the second connection line layer 82 and the first connection line layer 6 can be directly connected and conducted, namely, the purpose of communicating the first electrode layer 202 and the first connection line layer 6 through the second connection line layer 82 is achieved.
Furthermore, the blocking dam 8 further includes an oxidation preventing layer 83 formed on the second connecting line layer 82, the insulating layer 81, the second connecting line layer 82 and the oxidation preventing layer 83 are formed by a one-step patterning process, when the insulating layer 81, the second connecting line layer 82 and the oxidation preventing layer 83 are formed by etching, different etching liquids or etching rates can be adopted, so that the side surface of the insulating layer 81 facing the island 7 is recessed relative to the oxidation preventing layer 83 and the second connecting line layer 82, and the insulating layer 81 is prevented from influencing the connection and conduction of the first electrode layer 202 and the second connecting line layer 82.
After etching, the orthographic projection of the oxidation preventing layer 83 on the substrate 100 is overlapped with the orthographic projection of the second connecting line layer 82 on the substrate 100, so that the oxidation preventing layer 83 can better protect the second connecting line layer 82 from oxidation. Also, the surface of the second connection wiring layer 82 is flush with the surface of the first connection wiring layer 6. The sum of the thickness of the second connection wiring layer 82 and the thickness of the insulating layer 81 may be set to be the same as the thickness of the first connection wiring layer 6, the thickness of the insulating layer 81 may be set to be the same as the thickness of the light emitting layer 201, and the thickness of the first electrode layer 202 may be set to be the same as the thickness of the second connection wiring layer 82.
Further, before step S100, the manufacturing method further includes:
the first electrode lead layer 3 and the planarization layer 4 corresponding to the island 11 are sequentially formed on the non-display area, the planarization layer 4 covers the first electrode lead layer 3, and the planarization layer 4 is provided with a via hole for exposing the first electrode lead layer 3.
In step S100, after the barrier dam 8 is formed, the first connection wiring layer 6 is formed, and the first connection wiring layer 6 is connected to the first electrode lead layer 3 through the via hole;
the two planarization layers 4 between the adjacent two islands may be connected together at the time of formation, the two first electrode lead layers 3 may be connected together at the time of formation, and the two first connection wiring layers 6 may be connected together at the time of formation.
Between S100 and S200, the manufacturing method further includes:
as shown in fig. 6 to 10, a groove 9 is formed on the non-display region, the groove 9 divides the first connection wiring layer 6, the planarization layer 4 and the first electrode lead layer 3 into two parts symmetrical with respect to the groove 9, the substrate 100 is exposed on the bottom wall of the groove 9, the circuit structure layer 1 may be disposed on the substrate 100 while the circuit structure layer 1 is exposed on the bottom wall of the groove, and the first electrode lead layer 3 and the planarization layer 4 are disposed on the circuit structure layer 1;
in steps S200 and S300, the light-emitting layer 201 and the first electrode layer 202 are also formed in this order on the bottom wall of the groove 9.
After step S300, an encapsulation layer 203 is formed on the display region and the non-display region, the encapsulation layer 203 covers onto the side walls of the recess 9 and exposes the first electrode layer 202 on the bottom wall of the recess 9.
As shown in fig. 1 to 5, before step S100, the manufacturing method further includes a step of forming a circuit structure layer 1 on the substrate 100; arranging two first electrode lead layers 3 on a non-display area of the circuit structure layer 1 corresponding to the island 11, wherein the two first electrode lead layers 3 are spaced, and then sequentially manufacturing a flat layer 4 on the non-display area; after the two blocking dams 8 are manufactured, two pixel defining layers 7, a first connecting circuit layer 6 and the like are manufactured, the flat layer 4 covers the two first electrode lead layers 3, the flat layer 4 is provided with the first connecting circuit layer 6, the first connecting circuit layer 6 is connected with the two first electrode lead layers 3 through two through holes in the flat layer 4, and the two blocking dams 8 are located between the first connecting circuit layer 6 and the two pixel defining layers 7. The grooves 9 can be made by a patterning process, and the made grooves 9 separate the flat layer 4 and the first connection line layer 6 into two mutually independent parts.
Example four
The method for manufacturing a stretchable display module (not shown in the figures) provided by the embodiment of the invention comprises the following steps:
1) as shown in fig. 1, a circuit structure layer 1 is manufactured on a substrate 100, islands 11 and bridges 12 are arranged on the circuit structure layer, the islands 11 are located in a display area (see dashed line boxes at both sides), and the bridges 12 are located in a non-display area (see dashed line boxes in the middle);
the islands define one or more pixel cells, one pixel cell including at least 3 sub-pixels, each sub-pixel including a Thin Film Transistor (TFT). One pixel unit may include 4 subpixels, a red subpixel R, a green subpixel G, a blue subpixel B, and a white subpixel W. One pixel unit may also include 3 sub-pixels (red sub-pixel R, green sub-pixel G, and blue sub-pixel B) case. In this embodiment, the structure and the manufacturing process of the circuit structure layer 1 are the same as those of the conventional structure and manufacturing process. The thin film transistor may have a bottom gate structure or a top gate structure, and may be an amorphous silicon (a-Si) thin film transistor, or may be a Low Temperature Polysilicon (LTPS) thin film transistor or an Oxide (Oxide) thin film transistor, which is not limited herein. In practice, a high-light-transmitting material such as glass, quartz, a polyolefin resin, a polyethylene naphthalate resin, a polyimide resin, a poly (terephthalic acid) plastic, a phenol resin, or the like, or a surface-treated polymer film may be used for the substrate 100, and the circuit structure layer 1 may be formed by a patterning process.
The line structure layer 1 may be a pixel structure layer, where the pixel structure layer includes a plurality of gate lines and a plurality of data lines, the gate lines and the data lines are vertically crossed to define a plurality of pixel units arranged in a matrix, each pixel unit includes at least 3 sub-pixels, and each sub-pixel includes a Thin Film Transistor (TFT).
2) As shown in fig. 2, the third electrode layer 2 is formed on the display region, and the two first electrode lead layers 3 disposed in one-to-one correspondence with the display region are formed on the non-display region;
the third electrode layer 2 and the first electrode lead layer 3 are manufactured by a composition process, which includes film deposition, photoresist coating, mask exposure, development, etching, photoresist stripping and the like, and is a mature preparation process. The deposition may be performed by a known process such as sputtering, evaporation, chemical vapor deposition, etc., the coating may be performed by a known coating process, and the etching may be performed by a known method, which is not particularly limited herein. The third electrode layer 2 and the first electrode lead layer 3 may be fabricated by: depositing a metal film layer, coating photoresist on the metal film layer, then exposing the region outside the third electrode layer 2 and the first electrode lead layer 3 in a mask exposure mode, etching off the metal film layer in the exposure region after development to prepare the third electrode layer 2 and the first electrode lead layer 3, stripping off the photoresist on the third electrode layer 2 and the first electrode lead layer 3, wherein the third electrode layer 2 can be a drain electrode, and the first electrode lead layer can be a cathode lead layer 3.
3) As shown in fig. 3, a planarization layer 4 is formed in the non-display region, the planarization layer 4 covers the first electrode lead layers 3, via holes exposing the respective first electrode lead layers 3 are formed on the planarization layer 4, and the planarization layer 4 is formed through a patterning process; the 'patterning process' includes the processes of film deposition, photoresist coating, mask exposure, development, etching, photoresist stripping and the like, and is a mature preparation process at present. The deposition may be performed by a known process such as sputtering, evaporation, chemical vapor deposition, etc., the coating may be performed by a known coating process, and the etching may be performed by a known method, which is not particularly limited herein. The planarization layer 4 may be an insulating layer.
The manufacturing process of the flat layer 4 can be as follows: set up the rete of flat layer 4 on non-display area, the rete covers first electrode lead layer 3, then coats the photoresist on the rete, exposes through grinding for the rete that is located the display area exposes, is located two round holes of rete exposure on first electrode lead layer 3, and the exposure area is etched away to the back after developing, gets rid of the photoresist in the unexposed area at last. The planarization layer 4 has two vias, and the two first electrode lead layers 3 are exposed at the bottom walls of the two vias.
4) As shown in fig. 4, the second electrode layer 5 is formed on the third electrode layer 2 such that the surface of the second electrode layer 5 is coplanar with the surface of the planarization layer 4, and the first connection wiring layer 6 is formed on the planarization layer, the first connection wiring layer 6 being connected to each of the first electrode lead layers 3 through each of the via holes;
the second electrode layer 5 and the first connection wiring layer 6 may be fabricated in a manner that: a first metal film or a first transparent conductive film is deposited, and the second electrode layer 5 and the first connection wiring layer 6 are simultaneously formed through a one-time patterning process. The first transparent conductive film may be made of Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO), and the first metal film may be made of one of metal materials such as magnesium Mg, silver Ag, aluminum Al, copper Cu, and lithium Li, an alloy of the metal materials, or a composite layer of the metal materials. The first connection wiring layer 6 according to the embodiment of the present invention is not limited, and may be, for example, a sheet or a strip, and is connected to each first electrode lead layer 3 through a via hole.
5) As shown in fig. 5, a barrier dam 8 and a pixel defining layer 7 are sequentially formed between the first connection wiring layer 6 and the display region on the planarization layer 4, the barrier dam 8 being located between the pixel defining layer 7 and the first connection wiring layer 6, the barrier dam including an insulating layer 83 and a second connection wiring layer 82 on the insulating layer, the second connection wiring layer 82 being electrically connected to the first connection wiring layer 6, the pixel defining layer 7 defining the display region;
forming the pixel defining layer includes: a pixel defining film is coated, and the pixel defining film is exposed and developed by using a mask plate to form a pixel defining layer 7. The pixel definition layer 7 serves to define a pixel area, (i.e., an island 12 in this application). In this embodiment, the Pixel defining Layer 7(Pixel Define Layer) may be made of polyimide, acrylic, or polyethylene terephthalate, or may be made of chemical vapor deposition. The barrier dam 8 is fabricated through a one-time patterning process. The barrier dam 8 may include an insulating layer 81 and a second connection line layer 82 disposed on the insulating layer 81, and the barrier dam 8 may also include an insulating layer 81, a second connection line layer 82 disposed on the insulating layer 81, and an oxidation preventing layer 83 disposed on the second connection line layer 82. Taking the example that the barrier dam 8 includes the insulating layer 81, the second connecting line layer 82 and the oxidation preventing layer 83 as an example, film layers of the insulating layer 81, the second connecting line layer 82 and the oxidation preventing layer 83 are sequentially deposited (the insulating layer 81 on the upper side of the first connecting line layer 6 can be etched by a photolithography process after the insulating layer 81 is formed to ensure that the second connecting line layer 82 can be connected with the first connecting line layer 6 when the second connecting line layer 82 is formed), coating photoresist on the barrier dam on the film layer, exposing through a mask plate, developing the unexposed area between the first connecting circuit layer 6 and the pixel defining layer 7, the film layer of the oxidation-resistant layer 83 is etched at a first etching rate V1, the film layer of the second connection line layer 82 is etched at a second etching rate V2 after the etching is finished, and the film layer of the insulating layer 81 is etched at a third etching rate V3 after the etching is finished.And V3 > V1, V3 > V2, may be V1 — V2, to form a recess on the side of the insulating layer 81 facing the island 11, and the orthographic projection of the second connection wiring layer 82 coincides with the orthographic projection of the oxidation preventing layer 83, and both are larger than the orthographic projection of the insulating layer 81. The oxidation preventing layer 83 and the insulating layer 81 may be SiO2Or SiNx, etc., the oxidation preventing layer 83 is used for protecting the second connecting line layer 82 from oxidation, and the second connecting line layer 82 may be made of dry etching process materials such as aluminum, titanium or molybdenum, etc. The thickness of the insulating layer 81 can be set to 1000 to 3000 angstroms. The thickness of the second connection line layer 82 may be set to 100 to 5000 angstroms. The side surface of the second connection line layer 82 facing the island 11 side is a straight surface, and the slope angle is about 90 degrees. The side surfaces of the oxidation preventing layer 83 and the insulating layer 81 facing the island 11 are inclined surfaces. And the sum of the thicknesses of the insulating layer 81 and the second connection wiring layer 82 is equal to the thickness of the first connection wiring layer 6, so that the supported second connection wiring layer 82 is directly connected together with the first connection wiring layer 6 to be conducted.
6) As shown in fig. 6, a groove 9 is formed between the two first electrode lead layers 3 in any non-display region, the groove 9 separates the first connection line layer 6 from the planarization layer 4, and exposes the circuit structure layer 1 at the bottom, and the groove 9 can be formed by a patterning process; the 'patterning process' includes the processes of film deposition, photoresist coating, mask exposure, development, etching, photoresist stripping and the like, and is a mature preparation process at present. The deposition may be performed by a known process such as sputtering, evaporation, chemical vapor deposition, etc., the coating may be performed by a known coating process, and the etching may be performed by a known method, which is not particularly limited herein.
7) As shown in fig. 7, the light emitting layer 201 is formed on the non-display region and the display region, the light emitting layer 201 on the barrier dam 8 is broken by the barrier dam, the light emitting layer on the pixel defining layer 7 side is exposed to the side of the second connection wiring layer 82 facing the island 11 with respect to the light emitting layer 201, and the light emitting layer 201 at the groove 9 is also broken, that is, the light emitting layer 201 on the bottom surface in the groove 9 is disconnected from the light emitting layer 201 on the first connection wiring layer 6 by the groove 9, and the upper surface of the light emitting layer 201 between the barrier dam 8 and the pixel defining layer 7 is flush with the upper surface of the insulating layer 81; as shown in fig. 8, a first electrode layer 202 is formed on the light emitting layer 201, the exposed portion of the second connection line layer 82 is connected to the first electrode layer 202, the thickness of the first electrode layer 202 may be the same as the thickness of the second connection line layer 82, the first electrode layer 202 on the blocking dam 8 and the first electrode layer 202 on the first connection line layer 8 may be broken (may be a continuous structure without breaking when the anti-oxidation layer 83 is not formed), and the thickness of the anti-oxidation layer 83 may be set;
the luminescent layer and the first electrode layer can be manufactured in an evaporation mode, the blocking dam is located between the pixel defining layer and the first connecting circuit layer and protrudes out of the flat layer, the luminescent layer can be manufactured by adopting a conventional mask, the manufactured luminescent layer is formed on the island and the bridge, the blocking dam separates the luminescent layer (can be a unilateral separation and can also be a bilateral separation) due to the protrusion, so that the luminescent layer is two or three parts which are mutually independent at the blocking dam, and therefore, the water and oxygen are prevented from being transmitted into the island from the stretchable region along the luminescent layer, the problem that the island part structure is corroded by the water and oxygen is effectively solved, and the manufacturing and design cost of the mask can be reduced.
8) As shown in fig. 9, an encapsulation layer 203 is fabricated, the encapsulation layer 203 is formed on the side wall of the groove 9, and the first electrode layer 202 on the bottom wall of the groove 9 is exposed. The encapsulation layer 203 can be fabricated by a single patterning process, i.e., depositing a film layer of organic or inorganic composite material, such as Tetrafluoroethylene (TFE), which covers the entire substrate 100 to form the encapsulation layer 203, and then exposing the cathode 202 on the bottom wall of the groove 9 by coating photoresist, mask exposure, development, etching, stripping the photoresist, and the like; the encapsulation layer 203 can also be formed by coating.
Wherein the island 11 comprises the third electrode layer 2 and the second electrode layer 5; the bridge 12 includes the first electrode wiring layer 3, the planarization layer 4, the pixel defining layer 7, the barrier dam 8, the first connection wiring layer 6, and the groove 9. The light emitting layer 201, the first electrode layer 202 and the encapsulation layer 203 are located on both the islands 11 and the bridges 12.
It should be noted that the barrier dam 8 may be formed before the step of forming the pixel defining layer 7 and the first connection wiring layer 6, the barrier dam 8 may be formed between the steps of forming the pixel defining layer 7 and the first connection wiring layer 6, and the barrier dam 8 may be formed thicker than the steps of forming the pixel defining layer 7 and the first connection wiring layer 6.
Of course, the island 11 may include the light-emitting layer 201 and the first electrode layer 202 in the display region portion, and the island 12 may include the light-emitting layer 201 and the first electrode layer 202 in the non-display region portion.
The "patterning process" in this embodiment includes processes of depositing a film, coating a photoresist, mask exposure, development, etching, and stripping a photoresist, and the "photolithography process" in this embodiment includes processes of coating a film, mask exposure, and development, and is a well-established manufacturing process in the related art. The deposition may be performed by a known process such as sputtering, chemical vapor deposition, etc., the coating may be performed by a known coating process, and the etching may be performed by a known method, which is not particularly limited herein.
In the description herein, the terms "mounted," "connected," "fixed," and the like are to be construed broadly, e.g., "connected" may be a fixed connection, a removable connection, or an integral connection; may be directly connected or indirectly connected through an intermediate. The specific meaning of the above terms herein can be understood by those of ordinary skill in the art as appropriate.
In the description of the specification, reference to the term "one embodiment," "some embodiments," "a specific embodiment," or the like, means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example herein. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Although the embodiments disclosed herein are described above, the descriptions are only for the convenience of understanding the embodiments and are not intended to limit the disclosure. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure, and that the scope of the disclosure herein may be limited only by the appended claims.

Claims (10)

1. A display module, comprising:
a substrate having a display region and a non-display region;
a plurality of islands distributed in an array and spaced apart from each other, disposed on the display area of the substrate;
a plurality of bridges disposed on the non-display area of the substrate between the plurality of islands and connecting the plurality of islands;
a light emitting layer disposed on the islands and the bridges; and
a first electrode layer disposed on the light emitting layer;
wherein, the bridge including with the island corresponds first connecting circuit layer and separation dam, the separation dam is located the island with between the first connecting circuit layer, and cut off the luminescent layer, the separation dam includes the insulating layer and is located second connecting circuit layer on the insulating layer, second connecting circuit layer is connected first electrode layer with first connecting circuit layer.
2. The display module according to claim 1, wherein a side of the barrier dam facing the island blocks the light emitting layer, and a side of the second connection line layer facing the island is exposed to the light emitting layer and connected to the first electrode layer.
3. The display module according to claim 1, wherein the insulating layer is recessed with respect to the second connection wiring layer on a side of the barrier dam facing the island.
4. The display module of claim 1, wherein the dam further comprises:
and the anti-oxidation layer is arranged on the second connecting line layer and is used for performing anti-oxidation protection on the second connecting line layer.
5. The display module according to claim 1, wherein the slope angle of the side surface of the second connecting line layer is 85 to 95 degrees, and the thickness of the insulating layer is not less than the thickness of the light emitting layer.
6. The display module according to any one of claims 1 to 5, wherein the bridge further comprises a groove for achieving stretching, each of the groups of the first connection wiring layer and the barrier dam corresponding to each of the islands are separated by the groove, and the light-emitting layer and the first electrode layer are also provided on a bottom wall of the groove.
7. A display device, comprising a display module according to any one of claims 1 to 6.
8. A manufacturing method of a display module is characterized by comprising the following steps:
forming a plurality of islands distributed in an array and spaced apart from each other on a display area of a substrate;
forming a plurality of bridges on a non-display region of a substrate, the bridges being between and connecting a plurality of the islands, the bridges including barrier dams corresponding to the islands and a first connection wiring layer, the barrier dams being between the first connection wiring layer and the islands, the barrier dams including insulating layers and a second connection wiring layer, the second connection wiring layer being formed on the insulating layers and connected to the first connection wiring layer;
forming a light emitting layer on the display area and the non-display area, the light emitting layer being disposed on the island and the bridge, the blocking dam blocking the light emitting layer and exposing the second connection line layer with respect to the light emitting layer;
forming a first electrode layer on the display region and the non-display region, the first electrode layer being disposed on the light emitting layer, the first electrode layer being connected with the exposed region of the second connection line layer.
9. The method of manufacturing a display module according to claim 8, wherein a side of the barrier dam facing the island blocks the light-emitting layer, and a side of the second connection wiring layer facing the island is exposed to the light-emitting layer and connected to the first electrode layer.
10. The method of claim 8, wherein the barrier dam further comprises an oxidation preventing layer formed on the second connecting line layer, the insulating layer, the second connecting line layer and the oxidation preventing layer are formed by a one-step patterning process, and an etching rate of the insulating layer is greater than an etching rate of the oxidation preventing layer and an etching rate of the second connecting line layer, so that a side surface of the insulating layer facing the island is recessed with respect to the oxidation preventing layer and the second connecting line layer.
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