CN109887862A - Brushing device - Google Patents
Brushing device Download PDFInfo
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- CN109887862A CN109887862A CN201910033408.1A CN201910033408A CN109887862A CN 109887862 A CN109887862 A CN 109887862A CN 201910033408 A CN201910033408 A CN 201910033408A CN 109887862 A CN109887862 A CN 109887862A
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Abstract
Disclose a kind of brushing device, comprising: rack；A pair of of brush, the pair of brush can be rotatably set in the wafer clamp is scrubbed crystal column surface between them in rack, while the torque for driving the wafer rotation is generated on wafer；Control device, for making the torque for driving the wafer rotation remain unchanged according to driving the torque of the wafer rotation to adjust the spacing between a pair of of brush.Brushing device provided in an embodiment of the present invention, the spacing between brush is adjusted by the torque of monitoring brush rotation generation, guarantee that brush will not be since the torque scrubbed the increase of wafer number and brush torsion is caused to generate be constant during scrub, cleaning effect is improved, realizes the best match between brush revolving speed, wafer revolving speed, scrub efficiency and washing effect.
Description
Technical field
The present invention relates to field of semiconductor manufacture, in particular to for after wafer chemical mechanically polishes (CMP) technique
Brushing device.
Background technique
With the development of plane flash memories, the production technology of semiconductor achieves huge progress.But recently
Several years, the development of plane flash memory encountered various challenges: physics limit, the existing developing technique limit and storage electron density
Limit etc..In this context, to solve the difficulty that encounters of planar flash memory and most ask being produced into for lower unit storage unit
This, a variety of different three-dimensional (3D) flash memories structures are come into being, such as 3DNOR (flash memory and 3DNAND flash memory.
Meanwhile in order to improve the performance of three-dimensional (3D) flash memories, it is desirable that the size day of three-dimensional (3D) flash memories
Benefit reduces, and the multilayer interconnection of three-dimensional (3D) flash memories increasingly reduced due to size or depth of cracking closure is biggish deposited
Journey results in the excessive fluctuating in the surface wafer (Wafer), reduces the consistency of line width in whole wafer.Therefore, in three-dimensional
In the manufacturing process of (3D) flash memories structure, chemical mechanical milling tech (Chemical Mechanical is often used
Polish, CMP) planarization process is carried out to crystal column surface, however wafer CMP process rear surface remains organic compound, particle
With the surface contaminants such as metal impurities, and surface contaminants will affect lower one of the technique of wafer, and then seriously damage the performance of wafer
And reliability.For this reason, it may be necessary to be scrubbed to wafer after the cmp process to remove its surface contaminants.
Cleaning device mainly uses two-sided mechanical cleaning (Brush Scrubbing) at present, and in cleaning process, wafer is placed in
Among two brushes, by controlling two brush central axises, two brush rotations is driven, crystal column surface is scrubbed.As shown in Figure 1,
Used at present is the fixed cleaning mode of brush spacing, and the quantity with brush scrub wafer increases, and brush itself has mill
Consumption, leading to two brushes not is to completely attach to crystal column surface, and cause subsequent cleaning effect bad, to reduce wafer
Yield.As shown in Figure 2 a and 2 b, the torque of the driving wafer generated with the increase of scrub wafer number, brush gradually becomes
It is small, while the granule number quantitative change left on wafer is more, cleaning effect is bad.In the present solution, being scrub with the service life of brush
Wafer number is illustrated for reaching 5000, and the scrub wafer number in brush service life is not limited in practice.
Summary of the invention
In view of the above problems, the purpose of the present invention is to provide a kind of brushing devices, can solve brush during scrub
Since the quantity increase of scrub wafer leads to problems such as the torque for driving wafer rotation become smaller and then causes cleaning effect bad.
According to an aspect of the present invention, a kind of brushing device is provided, comprising:
Rack；
Bracket is arranged in the rack, for placing wafer；
A pair of of brush, the pair of brush can be rotatably set in rack so that wafer clamp is scrubbed wafer between them
Surface, while the torque for driving the wafer rotation is generated on wafer；
Control device, for according to the spacing between a pair of of the brush of torque adjustment for driving the wafer rotation.
Preferably, the pair of brush is cylindric brush, wherein the axis of the pair of brush is parallel to each other.
Preferably, the brush is porous sponge brush, including brush body and more on brush body surface
A protrusion.
Preferably, the brushing device further include:
Driving device, for driving brush to rotate；
Sensor, for monitoring the torque for the driving wafer rotation that brush rotation generates.
Preferably, when monitoring that the torque of the wafer rotation is driven to be less than preset value, the control device adjusts institute
Stating the spacing between a pair of of brush makes the torque for driving the wafer rotation reach preset range.
Preferably, the minimum value of the preset range is not less than the preset value.
Preferably, the spacing that the control device adjusts between the pair of brush makes the torque for driving the wafer rotation
Reaching preset range includes: the corresponding relationship for saving torque and brush spacing, according between the torque and preset range monitored
Difference, search the spacing that should be adjusted between corresponding brush.
Preferably, the spacing that the control device adjusts between the pair of brush makes the torque for driving the wafer rotation
Reaching preset range includes: that the spacing of a pair of of brush is adjusted default stepping after monitoring every time, until the torsion that the wafer rotates
Square reaches preset range.
Preferably, the brushing device further include:
Cleaning solution supplying unit, the cleaning solution supplying unit are arranged in the rack for applying to the surface of wafer
Cleaning solution.
Preferably, the cleaning solution supplying unit includes chemical feeding pipe and deionized water feeding pipe.
Preferably, the cleaning liquid pipeline and deionized water pipeline are mutually perpendicular to.
Brushing device provided in an embodiment of the present invention is adjusted between brush by the torque of monitoring brush rotation generation
Spacing guarantees that brush will not lead to the torque of brush torsion generation not due to scrubbing the increase of wafer number during scrub
Become, improve cleaning effect, realizes the best match between brush revolving speed, wafer revolving speed, scrub efficiency and washing effect.
In addition, cleaning liquid pipeline and deionized water pipeline are mutually perpendicular to, more conducively liquid is equably sent forth in crystal column surface,
And the cavity body structure of brushing device is more compact, saves the device space, and will not introduce secondary pollution.
Detailed description of the invention
By referring to the drawings to the description of the embodiment of the present invention, above-mentioned and other purposes of the invention, feature and
Advantage will be apparent from, in the accompanying drawings:
Fig. 1 shows top view of the brushing device when scrubbing crystal column surface in the prior art；
Fig. 2 a and Fig. 2 b are shown respectively brushing device scrub wafer number in the prior art and drive the torque of wafer rotation
Between curve graph and driving wafer rotation torque and scrub after wafer on amounts of particles between curve graph；
The structural schematic diagram of the brushing device of the embodiment of the present invention is shown respectively in Fig. 3 a and Fig. 3 b；
Fig. 4 shows top view of the brushing device shown in Fig. 3 a when scrubbing crystal column surface；
Fig. 5 shows existing brushing device and brushing device provided in an embodiment of the present invention scrub wafer number and driving
Curve graph between the torque of wafer rotation；
Fig. 6 shows existing brushing device and brushing device provided in an embodiment of the present invention scrub wafer number and brush
Curve graph between spacing.
Specific embodiment
The various embodiments that the present invention will be described in more detail that hereinafter reference will be made to the drawings.In various figures, identical element
It is indicated using same or similar appended drawing reference.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.
With reference to the accompanying drawings and examples, specific embodiments of the present invention will be described in further detail.
As shown in Fig. 3 a, Fig. 3 b and Fig. 4, brush arrangement according to an embodiment of the present invention, including rack (not shown),
Be arranged on the rack to place the bracket 100 of wafer 1, can be rotatably set in a pair of of brush 200a and 200b in rack, with
And control device 300.The brush includes brush body 201 and multiple protrusions 202 on 201 surface of brush body.
When scrubbing the surface of wafer 1, wafer 1 is moved and is placed on bracket 100 first, hereafter moves brush 200a and brush
200b then rotates brush 200a, brush 200b, while brush 200a and 200b is produced on wafer 1 so that its clamping wafer 1
The torque that raw driving wafer 1 rotates, to realize the scrub to 1 whole surface of wafer.Control device 300 is according to the driving crystalline substance
The torque of circle rotation adjusts the spacing between a pair of of brush, and then is consistent the torque for driving the wafer rotation.For example,
Quantity with scrub wafer 1 increases, and multiple protrusions 202 in brush surface will appear certain abrasion, and brush is caused to rotate
The torque of the driving wafer rotation of generation becomes smaller, in order to guarantee that the torque is constant, then between adjusting between brush 200a and 200b
Away from the spacing between brush 200a and 200b is turned down.In the present embodiment, the pair of brush 200a and 200b is cylinder
Shape brush, wherein the axis of the pair of brush is parallel to each other.Brush 200a and brush 200b is porous sponge brush.
In a preferred embodiment, the brushing device further includes driving device 400 and sensor 500, wherein is driven
Dynamic device 400 is connect with brush 200a and 200b, driving brush 200a and 200b rotation.Sensor 500 is arranged in brush body
On 201, the torque for the driving rotation of wafer 1 that monitoring brush rotation generates.
The torque monitored is sent to control device 300 by sensor 500, and control device 300 receives the torque monitored,
And compared with preset value, when monitoring that the torque of the wafer rotation is driven to be less than preset value, the control device 300 is adjusted
Spacing between the pair of brush makes the torque for driving the wafer rotation reach preset range.Wherein, the preset range
Minimum value be not less than the preset value.
In a preferred embodiment, the control device 300, which adjusts the spacing between the pair of brush, to be made to drive
It includes: the corresponding relationship for saving torque and brush spacing that the torque of the wafer rotation, which reaches preset range, according to what is monitored
Difference between torque and preset range searches the spacing that should be adjusted between corresponding brush.
Specifically, for reaching preset range, torque pass corresponding with brush spacing is stored in advance in control device 300
System, different torques correspond to different brush spacing, include the corresponding brush spacing of preset value in the corresponding relationship.For example, making
It is a with the corresponding brush spacing of preceding preset value A, the corresponding brush spacing of the first torque B is b.After a period of use, it monitors
Current torque is the first torque B, and according to the difference between the first torque B and preset value A, searching should be adjusted between corresponding brush
Spacing i.e. (b-a) adjusted on the basis of current brush spacing a, the brush spacing after adjusting be 2a-b.Then current brush
Sub- spacing is 2a-b, is monitoring that current torque is the first torque B again, is continuing to adjust spacing b-a, the brush spacing after adjusting is
(2a-b)-(b-a), i.e. 3a-2b.
In a preferred embodiment, the control device 300, which adjusts the spacing between the pair of brush, to be made to drive
It includes: that the spacing of a pair of of brush is adjusted default stepping after monitoring every time that the torque of the wafer rotation, which reaches preset range, directly
Torque to wafer rotation reaches preset range.
Specifically, after a period of use, when monitoring that current torque is less than preset value, according to default step-by-step adjustment brush
Spacing, until the torque monitored reaches preset range.
Fig. 4 shows top view of the brushing device shown in Fig. 3 a when scrubbing crystal column surface；
Fig. 5 shows existing brushing device and brushing device provided in an embodiment of the present invention scrub wafer number and driving
Curve graph between the torque of wafer rotation；
Fig. 6 shows existing brushing device and brushing device provided in an embodiment of the present invention scrub wafer number and brush
Curve graph between spacing.As seen in figs. 5-6, control device 300 automatically adjusts brush with the increase of scrub 1 quantity of wafer
Spacing between 200a and 200b makes the torque for driving the wafer rotation keep stablizing.Opposite, brush spacing is fixed
The case where, drive the torque of the wafer rotation to successively decrease with the increase of scrub wafer number.
In a preferred embodiment, the brushing device further includes cleaning solution supplying unit 600, is arranged in the machine
For applying cleaning solution to the surface of wafer on frame.
In a preferred embodiment, the cleaning solution supplying unit 600 includes 601 He of chemical feeding pipe
Deionized water feeding pipe 602.
In a preferred embodiment, the cleaning liquid pipeline 601 and deionized water pipeline 602 are mutually perpendicular to.
Brushing device provided by the invention adjusts the spacing between brush by the torque of monitoring brush rotation generation,
Guarantee that brush will not mention during scrub since the torque scrubbed the increase of wafer number and brush torsion is caused to generate is constant
High cleaning effect realizes the best match between brush revolving speed, wafer revolving speed, scrub efficiency and washing effect.
In addition, cleaning liquid pipeline and deionized water pipeline are mutually perpendicular to, more conducively liquid is equably sent forth in crystal column surface,
And the cavity body structure of brushing device is more compact, saves the device space, and will not introduce secondary pollution.
It is as described above according to the embodiment of the present invention, these embodiments details all there is no detailed descriptionthe, also not
Limiting the invention is only the specific embodiment.Obviously, as described above, can make many modifications and variations.This explanation
These embodiments are chosen and specifically described to book, is principle and practical application in order to better explain the present invention, thus belonging to making
Technical field technical staff can be used using modification of the invention and on the basis of the present invention well.The present invention is only by right
The limitation of claim and its full scope and equivalent.
Claims (11)
1. a kind of brushing device characterized by comprising
Rack；
Bracket is arranged in the rack, for placing wafer；
At least a pair of of brush, at least a pair of of brush can be rotatably set in rack to scrub wafer clamp between them
Crystal column surface, while the torque for driving the wafer rotation is generated on wafer；
Control device, for making described in driving according to driving the torque of the wafer rotation to adjust the spacing between a pair of of brush
The torque of wafer rotation maintains to stablize.
2. brushing device according to claim 2, which is characterized in that every a pair of of axis of at least a pair of of brush is mutual
In parallel.
3. brushing device according to claim 1, which is characterized in that the brush include brush body and be located at brush
Multiple protrusions in body surfaces.
4. brushing device according to claim 1, which is characterized in that further include:
Driving device, for driving brush to rotate；
Sensor, for monitoring the torque for the driving wafer rotation that brush rotation generates.
5. brushing device according to claim 4, which is characterized in that when the torque for monitoring that the wafer is driven to rotate is small
When preset value, the spacing that the control device adjusts between the pair of brush reaches the torque for driving the wafer rotation
Preset range.
6. brushing device according to claim 5, which is characterized in that the minimum value of the preset range is not less than described pre-
If value.
7. brushing device according to claim 5, which is characterized in that the control device is adjusted between the pair of brush
Spacing to make to drive the torque of the wafer rotation to reach preset range include: the corresponding relationship for saving torque and brush spacing,
According to the difference between the torque and preset range monitored, the spacing that should be adjusted between corresponding brush is searched.
8. brushing device according to claim 5, which is characterized in that the control device is adjusted between the pair of brush
Spacing to make to drive the torque of the wafer rotation to reach preset range include: to adjust the spacing of a pair of of brush after each monitoring
Default stepping, until the torque of wafer rotation reaches preset range.
9. brushing device according to claim 1, which is characterized in that further include:
Cleaning solution supplying unit, the cleaning solution supplying unit is arranged in the rack to be cleaned for applying to the surface of wafer
Liquid.
10. brushing device according to claim 9, which is characterized in that the cleaning solution supplying unit includes chemical cleaning
Agent feeding pipe and deionized water feeding pipe.
11. brushing device according to claim 10, which is characterized in that the cleaning liquid pipeline and deionized water pipeline phase
It is mutually vertical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910033408.1A CN109887862A (en) | 2019-01-14 | 2019-01-14 | Brushing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910033408.1A CN109887862A (en) | 2019-01-14 | 2019-01-14 | Brushing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109887862A true CN109887862A (en) | 2019-06-14 |
Family
ID=66926013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910033408.1A Pending CN109887862A (en) | 2019-01-14 | 2019-01-14 | Brushing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109887862A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111554569A (en) * | 2020-05-21 | 2020-08-18 | 华海清科股份有限公司 | Wafer cleaning device and wafer cleaning method |
| CN111558559A (en) * | 2020-05-21 | 2020-08-21 | 华海清科股份有限公司 | Wafer cleaning device and wafer cleaning method |
| CN112582307A (en) * | 2020-12-15 | 2021-03-30 | 华海清科股份有限公司 | Wafer cleaning method capable of dynamically adjusting posture |
| CN112718619A (en) * | 2020-12-15 | 2021-04-30 | 华海清科股份有限公司 | Wafer cleaning device capable of dynamically adjusting posture |
| CN112735940A (en) * | 2020-12-15 | 2021-04-30 | 华海清科股份有限公司 | Dynamically adjustable wafer cleaning method |
| CN112735977A (en) * | 2020-12-15 | 2021-04-30 | 华海清科股份有限公司 | Dynamically adjustable wafer cleaning device |
| CN114472265A (en) * | 2021-12-31 | 2022-05-13 | 华海清科股份有限公司 | Wafer cleaning method and wafer cleaning device |
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| CN201946573U (en) * | 2010-09-03 | 2011-08-24 | 清华大学 | Brushing device for wafer |
| CN103008301B (en) * | 2013-01-11 | 2016-01-20 | 常州市科沛达超声工程设备有限公司 | The two-sided scrubbing unit of wafer |
| CN108630588A (en) * | 2018-05-30 | 2018-10-09 | 睿力集成电路有限公司 | Method for cleaning wafer and system after chemical mechanical grinding |
| CN208336161U (en) * | 2018-05-30 | 2019-01-04 | 长鑫存储技术有限公司 | Wafer cleaning equipment after chemical mechanical polishing |
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2019
- 2019-01-14 CN CN201910033408.1A patent/CN109887862A/en active Pending
Patent Citations (4)
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| CN201946573U (en) * | 2010-09-03 | 2011-08-24 | 清华大学 | Brushing device for wafer |
| CN103008301B (en) * | 2013-01-11 | 2016-01-20 | 常州市科沛达超声工程设备有限公司 | The two-sided scrubbing unit of wafer |
| CN108630588A (en) * | 2018-05-30 | 2018-10-09 | 睿力集成电路有限公司 | Method for cleaning wafer and system after chemical mechanical grinding |
| CN208336161U (en) * | 2018-05-30 | 2019-01-04 | 长鑫存储技术有限公司 | Wafer cleaning equipment after chemical mechanical polishing |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111554569A (en) * | 2020-05-21 | 2020-08-18 | 华海清科股份有限公司 | Wafer cleaning device and wafer cleaning method |
| CN111558559A (en) * | 2020-05-21 | 2020-08-21 | 华海清科股份有限公司 | Wafer cleaning device and wafer cleaning method |
| CN112582307A (en) * | 2020-12-15 | 2021-03-30 | 华海清科股份有限公司 | Wafer cleaning method capable of dynamically adjusting posture |
| CN112718619A (en) * | 2020-12-15 | 2021-04-30 | 华海清科股份有限公司 | Wafer cleaning device capable of dynamically adjusting posture |
| CN112735940A (en) * | 2020-12-15 | 2021-04-30 | 华海清科股份有限公司 | Dynamically adjustable wafer cleaning method |
| CN112735977A (en) * | 2020-12-15 | 2021-04-30 | 华海清科股份有限公司 | Dynamically adjustable wafer cleaning device |
| CN114472265A (en) * | 2021-12-31 | 2022-05-13 | 华海清科股份有限公司 | Wafer cleaning method and wafer cleaning device |
| CN114472265B (en) * | 2021-12-31 | 2022-11-08 | 华海清科股份有限公司 | Wafer cleaning method and wafer cleaning device |
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Application publication date: 20190614 |