CN109884557A - Magnetic Sensor based on graphene dynamic inductance - Google Patents
Magnetic Sensor based on graphene dynamic inductance Download PDFInfo
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- CN109884557A CN109884557A CN201910034874.1A CN201910034874A CN109884557A CN 109884557 A CN109884557 A CN 109884557A CN 201910034874 A CN201910034874 A CN 201910034874A CN 109884557 A CN109884557 A CN 109884557A
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- dynamic inductance
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Abstract
The present invention provides a kind of Magnetic Sensor based on graphene dynamic inductance characterized by comprising substrate；U-shaped graphene coil on substrate is set；With two metal electrodes for being arranged in the insulating surfaces of substrate and being in contact respectively with the both ends of U-shaped graphene coil, wherein U-shaped graphene coil includes one layer~nine layers unimolecule graphene layer.Magnetic Sensor provided by the present invention based on graphene dynamic inductance is to carry out magnetic field accurate measurement based on a kind of new principle-graphene dynamic inductance, there is Larger Dynamic inductance value using graphene, and changes with external magnetic field and change, its changing value is ten magnitude multiples of carrier electric quantity change, has the characteristics that very high sensitivity and convenient for measurement.To sum up, Magnetic Sensor of the invention has many advantages, such as that high sensitivity, structure are simple, convenient test, good operating stability, size is small, is easily integrated realization, is very suitable to promote the use of on a large scale.
Description
Technical field
The invention belongs to field of microelectronic devices, and in particular to a kind of Magnetic Sensor based on graphene dynamic inductance.
Technical background
With the development of science and technology, Magnetic Sensor be widely used to information industry, industrial automation, power electronics,
The fields such as communications and transportation, biologic medical, military detection, consumer electronics.Existing Magnetic Sensor mainly has following three classes.The first kind is
Magnetic Sensor based on magnetoelectric effect, such sensor utilize the magnetoelectric effect of magnetoelectric material, i.e. application magnetic field causes mangneto to be stretched
Magnetostrictive effect occurs for compression material, and the strain of generation passes to piezoelectric material, and piezoelectric material generates electrode due to piezoelectric effect
Change.Magnetoelectric effect Magnetic Sensor has the characteristics that high sensitivity, low cost, small size, low-power consumption, but such sensor usually wraps
The magnetostriction materials and piezoelectric material closely bonded together are included, interface binding power is unstable, and performance is vulnerable to technique and environment
Influence, consistency is poor.Second class is the Magnetic Sensor based on Hall effect, such sensor is using in electrical conductor in magnetic field
Carrier forms potential difference by Lorentz force and then in conductor bilateral summation, obtains added magnetic field by measuring the potential difference
Size.This kind of Magnetic Sensor has the characteristics that simple structure, high sensitivity, response is fast, is easily integrated, but external test circuitry
Complexity is easily affected by temperature.Third class is the Magnetic Sensor based on magnetoresistance, such Magnetic Sensor utilizes material resistance or more
The characteristic that resistance changes under external magnetic field between layer material measures magnetic field size, and typical products have AMR magnetic sensor, GMR
Magnetic Sensor, MTJ Magnetic Sensor etc..Such sensor has the characteristics that high sensitivity, is easily integrated, but it is high, easy to prepare requirement
It is affected by environment.
Summary of the invention
The present invention is to carry out to solve the above-mentioned problems, it is therefore intended that goes out a kind of magnetic based on graphene dynamic inductance
Sensor has many advantages, such as that high sensitivity, structure are simple, convenient test, good operating stability, size is small, is easily integrated realization.
The present invention to achieve the goals above, uses following scheme:
The present invention provides a kind of Magnetic Sensor based on graphene dynamic inductance characterized by comprising substrate；Setting
U-shaped graphene coil on substrate；Be arranged in the insulating surfaces of substrate and both ends with U-shaped graphene coil respectively
Two metal electrodes being in contact, wherein U-shaped graphene coil includes one layer~nine layers unimolecule graphene layer.
Preferably, the Magnetic Sensor provided by the invention based on graphene dynamic inductance can also have the feature that U-shaped
Graphene coil is laminated by one layer~five layers unimolecule graphene layer.
Preferably, the Magnetic Sensor provided by the invention based on graphene dynamic inductance can also have the feature that gold
Category electrode U-shaped graphene coil is one layer of unimolecule graphene layer.
Preferably, the Magnetic Sensor provided by the invention based on graphene dynamic inductance can also have the feature that U-shaped
Graphene coil includes: two transverse coil sections being parallel to each other, and the longitudinal coil section of two transverse coil sections of connection, longitudinal
Coil segment and two transverse coil sections are perpendicular.
Preferably, the Magnetic Sensor provided by the invention based on graphene dynamic inductance can also have the feature that gold
Belong to electrode and uses the high conductive material small with graphene contact resistance, such as platinum, gold, copper.
Preferably, the Magnetic Sensor provided by the invention based on graphene dynamic inductance can also have the feature that lining
Bottom is flexible insulation medium (such as PET film), rigid insulation substrate (such as quartz plate), semiconductor chip (such as silicon equipped with insulating layer
Piece, and being isolated between silicon wafer and U-shaped graphene coil using insulating medium layer) in any one.
The action and effect of invention
(1) it is either based on magnetoresistance, Hall effect, or is based on magnetoelectric effect, existing Magnetic Sensor is substantially
Changes of magnetic field is measured by measurement conductor carriers electric quantity change-current or voltage.And single carrier electricity be 1.60 ×
10-19AS, magnitude is very small, and corresponding electric current and voltage are same magnitude, such small quantity is measured, not only to survey
Examination circuit proposes very high requirement, also vulnerable to the influence of external environment to influence measurement accuracy.Graphene is as a kind of
Two-dimensional material has unique Larger Dynamic inductance, and according to Laudauer principle, graphene unit length dynamic inductance is(M is the carrier number for participating in ballistic transport), that is, the graphene of corresponding 1um long, each carrier are corresponding
Dynamic inductance is 8.1 × 10-8NH, this is in actual measurement the saliency value easily measured, it can be seen that, magnetic field is to current-carrying
(electricity is 10 for subnumber amount-19Magnitude) influence can be reacted to a very big inductance value (inductance value 10-9Magnitude) variation, because
This compared with prior art, the present invention have the advantages that higher sensitivity and measure it is easier；
(2) using graphene coil as magnetosensitive unit, structure is simple, and size is small, can using standard micro technique
It realizes, process consistency is good, is readily applied in integrated circuit, has very strong practicability；
(3) using graphene coil as magnetosensitive unit, temperature stability is high, reduces the external measuring circuit that reads to temperature
The requirement of compensation is spent, thus reduces sensor overall cost, good operating stability.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the Magnetic Sensor based on graphene dynamic inductance prepared in the embodiment of the present invention；
Fig. 2 is the graphene dynamic inductance of the Magnetic Sensor based on graphene dynamic inductance involved in the embodiment of the present invention
The relational graph of amount and carrier electricity.
Specific embodiment
Below in conjunction with attached drawing to the specific embodiment of the Magnetic Sensor of the present invention based on graphene dynamic inductance
It is described in detail.
<embodiment one>
As shown in Figure 1, the Magnetic Sensor 10 based on graphene dynamic inductance provided in the present embodiment one is using such as lower section
Method is made:
Step 1. prepares a piece of quartz plate 11, cleans, drying；Single layer stone is grown on copper foil using chemical vapour deposition technique
Black alkene；The single-layer graphene on copper foil is transferred on quartz plate using graphene shifting process；Using photoetching process and it is equal from
The graphene that daughter etching technics will transfer on quartz plate 11 is patterned into U-shaped coil shape, forms U-shaped graphene coil
12；
Step 2. makes metal electrode window by lithography using photoetching process, and deposits one layer using electron beam evaporation process
100nm golden film；Golden film is patterned using stripping technology, forms two gold electrodes 13 at 12 both ends of U-shaped graphene coil,
Obtain the Magnetic Sensor 10 based on graphene dynamic inductance.
In the Magnetic Sensor 10 based on graphene dynamic inductance prepared by the present embodiment one: U-shaped graphene coil 12
For one layer of unimolecule graphene layer, it includes: two transverse coil section 12a being parallel to each other, and vertically two x wires of connection
Enclose the longitudinal coil section 12b of section 12a；Two gold electrodes 13 are in contact with the bared end of two transverse coil section 12a respectively.
In the present embodiment, by taking the graphene coil of 1um length as an example, the relationship of dynamic electric sensibility reciprocal and carrier electricity is such as
Shown in Fig. 2, as carrier electricity increases, dynamic electric sensibility reciprocal is substantially reduced, finally close to 0.
<embodiment two>
The Magnetic Sensor based on graphene dynamic inductance provided in the present embodiment two is made with the following method:
Step 1. prepares a piece of silicon wafer, cleans, drying, the silica of one layer of 500nm thickness of thermal oxide growth, using sputtering
Technique just deposits the Cu film of one layer of 500nm thickness on silica；
Step 2. grows five layers of graphene using plasma reinforced chemical vapour deposition technique on Cu film；Using alkene hydrochloric acid
Cu film is removed, is transferred to graphene on silica；Dioxy will transfer to using photoetching process and plasma etch process
Graphene film in SiClx is patterned into U-shaped coil shape, forms U-shaped graphene coil；
Step 3. makes metal electrode window by lithography using photoetching process；One layer of 80nm platinum is deposited using electron beam evaporation process
Film；Platinum film is patterned using stripping technology, two platinum electrodes is formed at U-shaped graphene coil both ends, obtains and be based on
The Magnetic Sensor of graphene dynamic inductance.
In the Magnetic Sensor based on graphene dynamic inductance prepared by the present embodiment two: U-shaped graphene coil is five
Layer unimolecule graphene layer, it includes: two transverse coil sections being parallel to each other, and vertically connects the vertical of two transverse coil sections
To coil segment；Two platinum electrodes are in contact with the bared end of two transverse coil sections respectively.
<embodiment three>
The Magnetic Sensor based on graphene dynamic inductance provided in the present embodiment three is made with the following method:
Step 1. prepares a piece of PET sheet, cleans, drying；Nine layers of graphite are grown on nickel foil using chemical vapour deposition technique
Alkene；Nine layers of graphene on nickel foil are transferred on PET sheet using graphene shifting process；Using photoetching process and plasma
The graphene that etching technics will transfer on PET sheet is patterned into coil shape, forms U-shaped graphene coil；
Step 2. makes metal electrode window by lithography using photoetching process；One layer of 100nm is deposited using electron beam evaporation process
Copper film；Copper film is patterned using stripping technology, forms two copper electrodes at U-shaped graphene coil both ends.
In the Magnetic Sensor based on graphene dynamic inductance prepared by the present embodiment three: U-shaped graphene coil is nine
Layer unimolecule graphene layer, it includes: two transverse coil sections being parallel to each other, and vertically connects the vertical of two transverse coil sections
To coil segment；Two copper electrodes are in contact with the bared end of two transverse coil sections respectively.
Above embodiments are only the illustration done to technical solution of the present invention.It is according to the present invention to be based on graphite
The Magnetic Sensor of alkene dynamic inductance is not merely defined in described content in the above-described embodiments, but with claim institute
Subject to the range of restriction.Any modify or supplement that those skilled in the art of the invention are done on the basis of the embodiment or
Equivalence replacement, all in claim range claimed of the invention.
Claims (6)
1. a kind of Magnetic Sensor based on graphene dynamic inductance characterized by comprising
Substrate；
U-shaped graphene coil over the substrate is set；With
Two gold for being arranged in the insulating surfaces of the substrate and being in contact respectively with the both ends of the U-shaped graphene coil
Belong to electrode,
Wherein, the U-shaped graphene coil includes one layer~nine layers unimolecule graphene layer.
2. the Magnetic Sensor according to claim 1 based on graphene dynamic inductance, it is characterised in that:
Wherein, the U-shaped graphene coil is laminated by one layer~five layers unimolecule graphene layer.
3. the Magnetic Sensor according to claim 1 based on graphene dynamic inductance, it is characterised in that:
Wherein, the U-shaped graphene coil is one layer of unimolecule graphene layer.
4. the Magnetic Sensor according to claim 1 based on graphene dynamic inductance, it is characterised in that:
Wherein, the U-shaped graphene coil includes: two transverse coil sections being parallel to each other, and two x wires of connection
The longitudinal coil section of section is enclosed,
The longitudinal coil section and two transverse coil sections are perpendicular.
5. the Magnetic Sensor according to claim 1 based on graphene dynamic inductance, it is characterised in that:
Wherein, the metal electrode is platinum, gold, any one in copper electrode.
6. the Magnetic Sensor according to claim 1 based on graphene dynamic inductance, it is characterised in that:
Wherein, the substrate be flexible insulation medium, it is rigid insulation substrate, any one in the semiconductor chip equipped with insulating layer
Kind.
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| CN108701737A (en) * | 2016-02-24 | 2018-10-23 | 三菱电机株式会社 | Electromagnetic wave detector |
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| CN107680978A (en) * | 2017-09-22 | 2018-02-09 | 浙江大华技术股份有限公司 | A kind of semiconductor optical amplifier and imaging device |
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