CN109872941A - A kind of processing method of silicon wafer - Google Patents
A kind of processing method of silicon wafer Download PDFInfo
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- CN109872941A CN109872941A CN201711271080.4A CN201711271080A CN109872941A CN 109872941 A CN109872941 A CN 109872941A CN 201711271080 A CN201711271080 A CN 201711271080A CN 109872941 A CN109872941 A CN 109872941A
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- silicon wafer
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- oxidation film
- chip surface
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Abstract
The present invention relates to a kind of processing methods of silicon wafer, comprising the following steps: takes a silicon wafer to carry out oxidation processes, to form oxidation film in the silicon chip surface；Low-temperature heat processing is carried out to the silicon wafer, diffuses to the metal ion inside the silicon wafer in the oxidation film of the silicon chip surface；Remove the oxidation film of the silicon chip surface；Clean the silicon wafer.Oxidation film is formed by carrying out oxidation processes to the silicon wafer, oxidation film has the function of adsorbing metal ions；Low-temperature heat processing is carried out to the silicon wafer, spreads the metal ion to the silicon chip surface, the metal ion can be attached on the oxidation film, to remove the metal ion inside the silicon wafer；Corrode the silicon chip surface by acidic corrosion solution etc., the oxidation film of the silicon chip surface and the metal ion being attached on oxidation film can be eroded, achievees the purpose that the removal Gold In Silicon Wafers category ion, make the more effective of the Gold In Silicon Wafers category ion remaval.
Description
Technical field
The present invention relates to semiconductor manufacturing facility technical field, especially a kind of processing method of silicon wafer.
Background technique
In silicon wafer treatment process, many situations, which can all cause to contain impurity, such as the material of silicon wafer itself in silicon wafer, to be contained
There are metal impurities or silicon wafer to be mixed into metal impurities etc. in process, with the diminution of semiconductor wire width and IC member
Requirement of the part to dark current is increasingly strict, it is desirable that the lower concentration of metallic impurities inside silicon wafer the better.
Metal impurities source type in silicon wafer is more, and need Gold In Silicon Wafers category impurity to reach certain proportion hereinafter,
Reducing Gold In Silicon Wafers category impurity from source can become relatively difficult.The method for reducing Gold In Silicon Wafers category impurity in the prior art is general
It is only the metal impurities for eliminating silicon chip surface, since impurity is not easy emersion surface inside silicon wafer, still there is minority
Metal impurities are retained in silicon wafer inside, influence silicon wafer use.
Summary of the invention
The purpose of the present invention is to provide a kind of processing methods of silicon wafer, to solve metal impurities in silicon wafer in the prior art
More problem.
In order to solve the problems in the existing technology, the present invention provides a kind of processing method of silicon wafer, the silicon wafers
Processing method including the following steps:
A silicon wafer is taken to carry out oxidation processes, to form oxidation film in the silicon chip surface；
Low-temperature heat processing is carried out to the silicon wafer, the metal ion inside the silicon wafer is made to diffuse to the silicon chip surface
Oxidation film in；
Remove the oxidation film of the silicon chip surface；
Clean the silicon wafer.
Optionally, in the processing method of the silicon wafer, the oxidation processes to the silicon wafer include: to be placed in the silicon wafer
In 700 DEG C to 1000 DEG C of environment, injects pure oxygen or mixing oxygen is aoxidized, when oxidation a length of 10 minutes to 1 hours.
Optionally, carrying out low-temperature heat processing to the silicon wafer includes: that the silicon wafer after oxidation processes is placed in 200 DEG C
On the platform heated to 300 DEG C, the time is 2 to 3 hours, diffuses to the metal ion in the silicon wafer after low-temperature heat
In the oxidation film of the silicon chip surface.
Optionally, during spreading the metal ion silicon sheet at low temperature heating, while to the silicon wafer
Carry out microwave radiation.
Optionally, in the processing method of the silicon wafer, before the oxidation film for removing the silicon chip surface, the silicon wafer
It is cooled down more than half an hour in room temperature, so that the metal ion is fixed on the oxidation film.
Optionally, it in the processing method of the silicon wafer, is carried out using oxidation film of the acid solution to the silicon chip surface
Corrode to remove the oxidation film of the silicon chip surface.
Optionally, rotten in oxidation film of the acid solution to the silicon chip surface in the processing method of the silicon wafer
During erosion, while injecting acid vapors and the silicon wafer is corroded.
Optionally, in the processing method of the silicon wafer, the silicon wafer is cleaned using the dedicated cleaning medical fluid of silicon wafer.
In the processing method of silicon wafer provided by the invention, oxidation processes are carried out to the silicon wafer, so that the silicon wafer
Surface is oxidized and forms layer oxide film, and oxidation film has the function of adsorbing metal ions, by carrying out low temperature to the silicon wafer
Heat treatment, can be such that the metal ion inside the silicon wafer all diffuses to the surface, to make the silicon chip surface and inside
Metal impurities be all adsorbed in the oxidation film, can be good at when to removing the oxidation film of the silicon chip surface remove institute
The metal impurities inside silicon wafer are stated, the quality of the silicon wafer is improved in terms of the purity of silicon wafer, are allowed to reduce to electric current etc.
It influences, plays significant role in use.
Detailed description of the invention
Fig. 1 is the flow chart of the silicon slice processing method of the embodiment of the present invention；
Fig. 2 is the silicon wafer schematic diagram of the embodiment of the present invention；
Wherein, 21-silicon wafer；22-oxidation films.
Specific embodiment
A specific embodiment of the invention is described in more detail below in conjunction with schematic diagram.According to following description and
Claims, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and
Using non-accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
The present invention provides a kind of processing method of silicon wafer, the processing method of the silicon wafer including the following steps:
A silicon wafer is taken to carry out oxidation processes, to form oxidation film in the silicon chip surface；
Low-temperature heat processing is carried out to the silicon wafer, the metal ion inside the silicon wafer is made to diffuse to the silicon chip surface
Oxidation film in；
Remove the oxidation film of the silicon chip surface；
Clean the silicon wafer.
In the embodiment of the present application, the silicon wafer for needing to remove metal impurities mainly includes the silicon for tentatively having completed manufacture
Piece have passed through crystal pulling, cutting etc., in the prior art, usually using this silicon wafer as substrate, make subsequent semiconductor devices.
But contain a small amount of metal ion inside the silicon wafer, it is the impurity in the silicon wafer, metal impurities will affect the silicon
The use etc. of piece, therefore the present invention reduces the silicon wafer in use to electricity by removing the impurity in such silicon wafer
The influence of stream etc..
Specifically, please referring to attached drawing 1 and attached drawing 2, wherein attached drawing 1 is the stream of the silicon slice processing method of the embodiment of the present invention
Cheng Tu；Attached drawing 2 is the silicon wafer schematic diagram of the embodiment of the present invention.
As depicted in figs. 1 and 2, firstly, executing step S01, a silicon wafer 21 is taken to carry out oxidation processes, to form one layer of oxidation
Film 22；Specifically, the silicon wafer 21 is placed in 700 DEG C to 1000 DEG C of environment, injects pure oxygen or mixing oxygen is aoxidized, oxygen
A length of 10 minutes to 1 hour when change.
In embodiments of the present invention, the silicon wafer 21 be oxidized at a high temperature of 700 DEG C to 1000 DEG C it is best, by
This, can to avoid 22 surface of oxidation film generate particle, 22 stress of oxidation film increases, oxidation film 22 is uneven the problems such as.Further
, oxidation process can carry out in pure oxygen, can also carry out in the mixture of oxygen containing hydrogen, oxidation rate in purity oxygen
Relatively high, oxidation rate is relatively low in mixture of oxygen.Preferably, only oxygen and two kinds of other gas below in mixed gas
Body, such as only include oxygen and hydrogen.
Common, in the oxidation process of silicon wafer 21: 22 thickness of oxidation film will thicken according to the increase of oxidization time, in oxygen
Change after duration is more than 1 hour, will increase the loss to the silicon wafer 21, the oxidation film 22 of formation can also thicken, after influencing
Continuous corrosion process.It is preferred, therefore, that a length of 10 minutes to 1 hours when oxidation.For example, oxidation duration can be 10 minutes, 15
Minute, 30 minutes or 45 minutes etc., to form one layer of thin oxide layer on 21 surface of silicon wafer.
Please continue to refer in attached drawing 2, the oxidation film 22 on the silicon wafer 21 is generated by thermally grown method, in high temperature
It under environment, is reacted by externally supplying oxygen with the silicon wafer 21, one layer of thermally grown oxygen can be obtained on the silicon wafer 21
Change layer.Due to 21 surfacing of silicon wafer, so that the oxidation film 22 grown on the silicon wafer 21 is mainly layer structure, because
This these layer structure is attached to the surface of the silicon wafer 21.
Then step S02 is executed, low-temperature heat processing is carried out to the silicon wafer 21.In the embodiment of the present application, at low temperature
Reason process is that the silicon wafer 21 after oxidation processes is placed on 200 DEG C to 300 DEG C of heating platform, and the time is 2 to 3 small
When, spread the metal ion in the silicon wafer 21 inside the silicon wafer to the silicon chip surface.When compared to oxidation process
700 DEG C to 1000 DEG C, be 200 DEG C to 300 DEG C, during cooling down to the silicon wafer 21, the low-temperature heat at present
Platform heats the silicon wafer 21, and 21 bottom surface of silicon wafer contacts heating platform, and the temperature of 21 bottom surface of silicon wafer is higher than
The temperature of the top surface of the silicon wafer 21 keeps the metal ion mobile to the topsheet surface of the silicon wafer 21, the metal ion
Including surface in the silicon wafer 21 and internal all metal ions, the long low-temperature heat time is preferably 2 to 3 hours, purpose
It is to allow whole metal ions to have the sufficient time to external diffusion to adequately allow metal ion to external diffusion.
Then, while to just in 21 surface of the silicon wafer of low-temperature heat progress microwave radiation.
Specifically, for P-type semiconductor, in the case where having iron ion and boron ion simultaneously in semiconductor, it is easy to be formed
Iron-boron key, influences the diffusion of iron ion.In low-temperature heat treatment process, it is therefore an objective to the 21 interior metal impurity of silicon wafer be allowed to expand
It is dissipated to 21 surface of silicon wafer, and the iron-boron key formed will affect the diffusion of iron ion, make metal impurities in the silicon wafer 21
It cannot remove well.
Preferably, selection using the mode of microwave radiation radiates 21 surface of silicon wafer in the present invention, and making may shape
At iron-boron key disconnect, iron ion will continue to other metal ions together to 21 table of silicon wafer after iron-boron key disconnects
Face diffusion, does not influence the process for removing the metal ion；It is exactly at 200 DEG C to 300 that the time of microwave radiation is used in the present invention
In DEG C this period of time of low-temperature heat, it can be the radiation of duration, be also possible to intermittent radiation.
Further, if there is no the P-type semiconductor silicon wafer 21, only N-type semiconductor silicon wafer 21 in experimentation, just
It can be omitted with microwave radiation the step.
Before the oxidation film 22 for removing 21 surface of silicon wafer, step S03 is executed, makes the silicon wafer 21 in room temperature (example
Such as 25 DEG C of room temperature) in cool down more than half an hour so that the metal ion is gradually fixed on the oxidation film 22.In this step
In rapid, by cooling down the silicon wafer 21 more than half an hour in room temperature, during the silicon wafer 21 gradually cools down, make to move
The dynamic metal ion being diffused on 21 surface film oxide 22 of silicon wafer gradually no longer moves, slowly be fixed on the oxidation film
On 22.
Further, this cooling more than half a hour can make to avoid the metal ion to moving inside the silicon wafer 21
The metal ion inside the silicon wafer 21 removes more thorough.
Further, the oxidation film 22 is to be aoxidized to be formed under high temperature action by the silicon and oxygen on 21 surface of silicon wafer
's；The oxidation film 22 can play the role of protection and the isolation silicon wafer 21, make the silicon wafer 21 not by air pollution, described
Oxidation film 22 also has suction-operated；In the present invention, the suction-operated of the oxidation film 22,22 pairs of institutes of the oxidation film are utilized
Stating the metal impurities in silicon wafer 21 has very strong absorbability, can be the silicon wafer 21 by the adsorption capacity of oxidation film 22
In metal impurities be adsorbed on the oxidation film 22, the metal impurities in the silicon wafer 21 are taken out from the silicon wafer 21.
The main purpose of step S04 is the oxidation film 22 in order to remove 21 surface of silicon wafer, in the present invention described in removal
The method of the oxidation film 22 on 21 surface of silicon wafer can be through acid solution and sour gas corrosion oxidation film 22, erode simultaneously
The metal impurities being adsorbed on the oxidation film 22.
Preferably, the acid solution can be hydrofluoric acid solution, and the hydrofluoric acid has extremely strong corrosivity, can be strong
Corrode metal, glass and siliceous oxide in ground.Corrode 21 surface of silicon wafer using the hydrofluoric acid solution in the present invention
Metal impurities on oxidation film 22 and the oxidation film 22, by the metal impurities on the oxidation film 22 and the oxidation film 22
It removes together.
Further, in 22 removal process of oxidation film on 21 surface of silicon wafer, in the hydrofluoric acid solution to described
Injection hydrofluoric acid vapor further corrodes the oxidation film 22 while the oxidation film 22 on 21 surface of silicon wafer corrodes, and makes
The oxidation film 22 on 21 surface of silicon wafer corrodes thoroughly.Since hydrofluoric acid solution has corroded the oxidation film 22 on 21 surface of silicon wafer
And the metal impurities on the oxidation film 22, cause 21 surface of silicon wafer be not it is especially smooth, solution cannot completely attach to
It arrives, is further to utilize gas molecule spacing big using hydrofluoric acid vapor, volume very little, the very big feature of mobility makes hydrogen fluorine
Acid vapor is wider array of to touch 21 surface of silicon wafer, and it is wider to corrode 22 range of oxidation film, more thoroughly, makes the silicon wafer 21
The oxidation film 22 and the metal impurities on surface can completely remove.
Then, step S05 is executed, the silicon wafer 21 is cleaned using the dedicated cleaning medical fluid of silicon wafer 21.Molten through peracidity
After liquid and acid vapors corrosion, the silicon wafer 21 remains many acidic moleculars, influences the cleannes of the silicon wafer 21, because
After this this step cleans the silicon wafer 21 by Special cleaning medical fluid, clean 21 surface recovery of silicon wafer completely, without miscellaneous
The state of matter.
To sum up, oxidation processes are carried out to the silicon wafer, after the surface of the silicon wafer is oxidized, forms layer oxide film
It is attached to the silicon chip surface, oxidation film has the function of adsorbing metal ions, by carrying out low-temperature heat processing to the silicon wafer, makes
Metal ion inside the silicon wafer all diffuses to the surface, so that the silicon chip surface and the metal impurities of inside be made all to adsorb
In the oxidation film, so as to remove the metal impurities inside the silicon wafer well, improved in terms of the purity of silicon wafer
The quality of the silicon wafer is allowed to reduce the influence to electric current etc., plays significant role in use.
The silicon chip surface is radiated in the present invention by the way of microwave radiation, disconnects the iron formed-boron key,
Iron ion will continue to spread to the silicon chip surface after iron-boron key disconnects, and make the process for removing the Gold In Silicon Wafers category ion
It is more efficient.
The above is only a preferred embodiment of the present invention, does not play the role of any restrictions to the present invention.Belonging to any
Those skilled in the art, in the range of not departing from technical solution of the present invention, to the invention discloses technical solution and
Technology contents make the variation such as any type of equivalent replacement or modification, belong to the content without departing from technical solution of the present invention, still
Within belonging to the scope of protection of the present invention.
Claims (8)
1. a kind of processing method of silicon wafer, which is characterized in that the processing method of the silicon wafer the following steps are included:
A silicon wafer is taken to carry out oxidation processes, to form oxidation film in the silicon chip surface；
Low-temperature heat processing is carried out to the silicon wafer, the metal ion inside the silicon wafer is made to diffuse to the oxygen of the silicon chip surface
Change in film；
Remove the oxidation film of the silicon chip surface；
Clean the silicon wafer.
2. the processing method of silicon wafer as described in claim 1, which is characterized in that the oxidation processes to the silicon wafer include: by
The silicon wafer is placed in 700 DEG C to 1000 DEG C of environment, injects pure oxygen or mixing oxygen is aoxidized, and a length of 10 minutes extremely when oxidation
1 hour.
3. the processing method of silicon wafer as described in claim 1, which is characterized in that carry out low-temperature heat processing packet to the silicon wafer
It includes: the silicon wafer after oxidation processes being placed on the platform of 200 DEG C to 300 DEG C heating, the time is 2 to 3 hours, is made described
Metal ion in silicon wafer is diffused to after low-temperature heat in the oxidation film of the silicon chip surface.
4. the processing method of silicon wafer as claimed in claim 3, which is characterized in that make the gold to silicon sheet at low temperature heating
During belonging to ion diffusion, while microwave radiation is carried out to the silicon wafer.
5. the processing method of silicon wafer as claimed in claim 4, which is characterized in that the oxidation film for removing the silicon chip surface it
Before, the silicon wafer cools down more than half an hour in room temperature, so that the metal ion is fixed on the oxidation film.
6. the processing method of silicon wafer as described in claim 1, which is characterized in that using acid solution to the silicon chip surface
Oxidation film is corroded to remove the oxidation film of the silicon chip surface.
7. the processing method of silicon wafer as claimed in claim 6, which is characterized in that in the acid solution to the silicon chip surface
Oxidation film corrosion process in, while injecting acid vapors and the silicon wafer corroded.
8. the processing method of silicon wafer as described in claim 1, which is characterized in that clean institute using the dedicated cleaning medical fluid of silicon wafer
State silicon wafer.
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| CN201711271080.4A CN109872941A (en) | 2017-12-05 | 2017-12-05 | A kind of processing method of silicon wafer |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1261459A (en) * | 1997-05-29 | 2000-07-26 | Memc电子材料有限公司 | Process for the removed of copper and other metallic impurities from silicon |
| CN1981369A (en) * | 2004-05-07 | 2007-06-13 | Memc电子材料有限公司 | Process for metallic contamination reduction in silicon wafers |
| CN101211774A (en) * | 2006-12-29 | 2008-07-02 | 斯尔瑞恩公司 | Method for cleaning silicon wafer |
| CN103359736A (en) * | 2013-07-17 | 2013-10-23 | 海南大学 | Method for purifying and preparing silicon carbide powder from crystalline silicon cutting waste mortar |
| CN103871871A (en) * | 2014-02-21 | 2014-06-18 | 上海华力微电子有限公司 | Method for removing metallic purities of silicon chip |
| CN105428302A (en) * | 2014-09-17 | 2016-03-23 | 中国科学院上海微系统与信息技术研究所 | Method of preparing material-over-insulator by utilizing low-temperature peeling technology |
-
2017
- 2017-12-05 CN CN201711271080.4A patent/CN109872941A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1261459A (en) * | 1997-05-29 | 2000-07-26 | Memc电子材料有限公司 | Process for the removed of copper and other metallic impurities from silicon |
| CN1981369A (en) * | 2004-05-07 | 2007-06-13 | Memc电子材料有限公司 | Process for metallic contamination reduction in silicon wafers |
| CN101211774A (en) * | 2006-12-29 | 2008-07-02 | 斯尔瑞恩公司 | Method for cleaning silicon wafer |
| CN103359736A (en) * | 2013-07-17 | 2013-10-23 | 海南大学 | Method for purifying and preparing silicon carbide powder from crystalline silicon cutting waste mortar |
| CN103871871A (en) * | 2014-02-21 | 2014-06-18 | 上海华力微电子有限公司 | Method for removing metallic purities of silicon chip |
| CN105428302A (en) * | 2014-09-17 | 2016-03-23 | 中国科学院上海微系统与信息技术研究所 | Method of preparing material-over-insulator by utilizing low-temperature peeling technology |
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Application publication date: 20190611 |
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