CN109872937B - High-energy electronic 3D imaging device and method - Google Patents
High-energy electronic 3D imaging device and method Download PDFInfo
- Publication number
- CN109872937B CN109872937B CN201910149803.6A CN201910149803A CN109872937B CN 109872937 B CN109872937 B CN 109872937B CN 201910149803 A CN201910149803 A CN 201910149803A CN 109872937 B CN109872937 B CN 109872937B
- Authority
- CN
- China
- Prior art keywords
- imaged
- sample
- electron beam
- energy electron
- imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
A high-energy electronic 3D imaging device and method are applied to the technical field of high-energy electronic imaging, and comprise the following steps: an electron gun for emitting an electron beam; an accelerator for accelerating the electron beam to obtain a high-energy electron beam; the beam transport assembly is used for transmitting the high-energy electron beam and regulating and controlling the beam quality of the high-energy electron beam; the rotating bracket is used for placing a sample to be imaged and adjusting the preset placing angle of the sample to be imaged; the detector system is used for receiving the high-energy electron beams, acquiring first imaging formed by receiving the high-energy electron beams and storing image data of the first imaging; the point-to-point magnetic lens imaging system is used for amplifying the first imaging and adjusting the definition of the first imaging; and the 3D reconstruction system is used for processing the image data of the first imaging through a 3D reconstruction algorithm to obtain 3D imaging of the sample to be imaged. The method can realize 3D imaging, and effectively solve the problem that the imaging technology at the present stage can only realize two-dimensional imaging.
Description
Technical Field
The present disclosure relates to the field of high-energy electronic imaging technologies, and in particular, to a high-energy electronic 3D imaging apparatus and method.
Background
High-energy electron imaging is an important tool in the field of modern radiology and makes use of the powerful penetration of high-energy electron beams to enable imaging diagnostic studies on relatively thick targets. High-energy electronic imaging has significant advantages over other diagnostic methods: firstly, the cost of the used electron accelerator is relatively low; secondly, its imaging system is small and it is easy to develop devices specifically for imaging; thirdly, the electron beam technology based on picosecond pulse width of a photocathode is mature, and is particularly suitable for ultrafast dynamic imaging; fourthly, the electron beam parameter regulation and control technology is relatively easy.
However, the conventional high-energy electronic imaging method is mainly two-dimensional imaging, cannot accurately reflect three-dimensional structure information of a sample, and cannot faithfully provide image information under certain specific conditions. For example, the projections of the two samples on the xy plane have the same image, but the shape difference exists in the z-axis direction, and the conventional high-energy electron imaging method cannot distinguish the difference.
Disclosure of Invention
One aspect of the present disclosure provides a high-energy electronic 3D imaging device, comprising:
an electron gun for emitting an electron beam;
an accelerator for accelerating the electron beam to obtain a high-energy electron beam;
the beam transport assembly is used for transmitting the high-energy electron beam and regulating and controlling the beam quality of the high-energy electron beam;
the rotating bracket is used for placing a sample to be imaged and adjusting a preset placing angle of the sample to be imaged;
a detector system for receiving the high-energy electron beam, acquiring a first image formed by receiving the high-energy electron beam, and storing image data of the first image;
a point-to-point magnetic lens imaging system for magnifying the first image and adjusting the sharpness of the first image;
and the 3D reconstruction system is used for processing the image data of the first imaging through a 3D reconstruction algorithm to obtain 3D imaging of the sample to be imaged.
Optionally, the position of the rotating bracket is arranged between the beam transport assembly and the point-to-point magnetic lens imaging system.
Optionally, the rotating bracket includes: the object placing platform is used for placing the sample to be imaged; the bracket base is used for supporting the object placing platform and adjusting the preset placing angle of the object placing platform, and the object placing platform can rotate 180 degrees relative to the bracket base;
another aspect of the present disclosure provides a method of high energy electron 3D imaging, comprising:
s1, emitting an electron beam;
s2, accelerating the electron beam to obtain a high-energy electron beam;
s3, transmitting the high-energy electron beam and regulating and controlling beam parameters of the high-energy electron beam;
s4, adjusting the preset placing angle of the sample to be imaged;
s5, the high-energy electron beam passes through the sample to be imaged to form a first image;
s6, magnifying the first image and adjusting the definition of the first image;
s7, acquiring the first imaging and storing the image data of the first imaging;
s8, repeating the steps S4-S7, and obtaining the first imaging of the sample to be imaged at the preset placing angle;
s9, processing the first imaged image data of the sample to be imaged through a 3D reconstruction algorithm to obtain 3D imaging of the sample to be imaged.
Optionally, the passing of the high-energy electron beam through the sample to be imaged includes: and the high-energy electron beam collides with the sample to be imaged, and after the high-energy electron beam is scattered and transmitted in the sample to be imaged, the transverse distribution characteristics of the high-energy electron beam are rich in the structural information of the sample to be imaged.
Optionally, the passing of the high-energy electron beam through the sample to be imaged and the forming of the first image includes: the high-energy electron beam impinges on a high-energy electron diffraction phosphor screen within the detector system to form the first image.
Optionally, the first image comprises structural information of the sample to be imaged.
Optionally, the adjusting the preset placing angle of the sample to be imaged includes: and rotating the object placing platform for placing the sample to be imaged in a clockwise or counterclockwise direction to increase the angle of the object placing platform by 5 degrees in the clockwise or counterclockwise direction.
Optionally, the 3D reconstruction algorithm analyzes all the first images of the sample to be imaged, obtains two-dimensional information of the sample to be imaged at different angles, and performs three-dimensional reconstruction according to the two-dimensional information to obtain the 3D images of the sample to be imaged.
Optionally, the adjusting and controlling the quality of the high-energy electron beam includes adjusting distribution of the high-energy electron beam in a transverse phase space and adjusting uniformity of transverse distribution of the high-energy electron beam.
The at least one technical scheme adopted in the embodiment of the disclosure can achieve the following beneficial effects:
in the embodiment of the disclosure, a high-energy electron beam may pass through the sample to be imaged to form a first image, obtain first images of the sample to be imaged at different angles, and process all image data of the first images of the sample to be imaged through a 3D reconstruction algorithm to obtain a 3D image of the sample to be imaged. In the process, the 3D reconstruction algorithm is applied to the high-energy electronic imaging technology, high-energy electronic 3D imaging is realized, and the high-energy electronic imaging capability is improved.
Drawings
For a more complete understanding of the present disclosure and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
FIG. 1 schematically shows a schematic view of a high-energy electronic 3D imaging device;
FIG. 2 schematically shows a flow chart of a method of high energy electronic 3D imaging;
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It is noted that the terms used herein should be interpreted as having a meaning that is consistent with the context of this specification and should not be interpreted in an idealized or overly formal sense.
Fig. 1 schematically illustrates a schematic diagram of a high-energy electronic 3D imaging device provided by an embodiment of the present disclosure.
As shown in fig. 1, the high-energy electron 3D imaging device includes: an electron gun 110, an accelerator 120, a beam transport assembly 130, a rotating support 140, a point-to-point magnetic lens imaging system 150, a detector system 160, and a 3D reconstruction system (not shown), and furthermore, a sample 170 to be imaged is shown in fig. 1.
Specifically, the electron gun 110 is a part that generates an electron beam, and emits the electron beam.
An accelerator 120 for accelerating the electron beam to obtain a high-energy electron beam.
The accelerator 120 is a device for increasing the velocity (kinetic energy) of charged particles, and the electron beam is accelerated by the action of an electric field force in an electric field generated in the accelerator to increase the energy and obtain a high-energy electron beam.
And the beam transport assembly 130 is used for transmitting the high-energy electron beam and regulating and controlling the beam quality of the high-energy electron beam.
The beam transport assembly 130 is a combination of a series of particle transport elements disposed between the accelerator 120 and the sample to be imaged. Designing the beam transport assembly 130 is to design an optimal transmission element combination according to the given beam parameters at the outlet of the accelerator 120, so that the required beam is obtained on the sample to be imaged, the whole system is relatively economic in investment, and a reasonable beam envelope is obtained in the transmission process.
The main functions of the beam transport assembly 130 are transport and matching: the beam is confined in a vacuum tube by focusing and deflecting elements, transported to a pre-specified location (starting point is the injection point of the accelerator 120 and ending point is the sample 170 to be imaged), and the central trajectory, lateral dimensions and divergence angle, dispersion trajectory and possibly lateral characteristics of the beam are matched by a series of transformations. In the embodiment of the present disclosure, the adjusting and controlling the beam quality of the high-energy electron beam by the beam transportation assembly 130 mainly refers to adjusting the distribution of the high-energy electron beam in the transverse phase space and adjusting the uniformity of the transverse distribution of the high-energy electron beam.
The rotating bracket 140 is used for placing a sample to be imaged, and the preset placing angle of the sample to be imaged 170 is adjusted.
The position of the rotating support 140 is located between the beam transport assembly 130 and the point-to-point magnetic lens imaging system 150.
Wherein, this rotating bracket 140 includes: the object placing platform is used for placing the sample to be imaged; the support base is used for supporting the object placing platform and adjusting the preset placing angle of the object placing platform, and the object placing platform can rotate 180 degrees relative to the support base.
The sample 170 to be imaged is placed on the placement platform of the rotating bracket 140, and the rotating bracket 140 is used to adjust the preset placement angle of the sample 170 to be imaged, so that the placement platform is rotated in one single direction of clockwise or counterclockwise directions at each time, and the preset placement angle of the sample 170 to be imaged is increased by 5 degrees in the direction at each time.
A point-to-point magnetic lens imaging system 150 for magnifying the first image and adjusting the sharpness of the first image.
A magnetic lens refers to an axisymmetric magnetic field that is capable of converging a uniform charged particle beam and imaging the shape of an object in such beam path. Such a magnetic field (magnetic lens) may be generated by a solenoid, an electromagnet or a permanent magnet. For use in electron and ion microscopes, charged particle accelerators and other devices.
The high-energy electron beam passes through the sample 170 to be imaged, and after the high-energy electron beam is collided, scattered and transmitted inside the sample 170 to be imaged, the transverse distribution of the high-energy electron beam is rich in information such as the density and the thickness of the sample 170 to be imaged at the preset placing angle. The high-energy electron beam is then focused on a high-energy electron diffraction fluorescent screen in the detector system 160 for imaging through the point-to-point magnetic lens imaging system 150 with a certain magnification, and the imaging definition can be improved by adjusting the size and the position of a diaphragm in the magnetic lens system.
A detector system 160 for receiving the high energy electron beam, acquiring a first image formed by receiving the high energy electron beam, and storing image data of the first image.
The high-energy electron beam strikes the high-energy electron diffraction phosphor screen in the detector system 160 to form an image, i.e., the first image, which also carries information about the density and thickness of the sample 170 to be imaged at the preset placement angle, because the lateral distribution of the high-energy electron beam is rich in information about the density and thickness of the sample 170 to be imaged at the preset placement angle. The first image is acquired by a CCD camera in the detector system 160, stored in an image acquisition card, and then processed by image processing software in a computer, including filtering, background removal, etc., to improve the image quality of the first image. The first image carries two-dimensional information of the sample 170 to be imaged at the preset angle.
And the 3D reconstruction system is used for processing the image data of the first imaging through a 3D reconstruction algorithm to obtain 3D imaging of the sample to be imaged.
It should be noted that fig. 1 is only an example of a scenario in which the embodiments of the present disclosure may be applied to help those skilled in the art understand the technical content of the present disclosure, but does not mean that the embodiments of the present disclosure may not be applied to other devices, systems, environments or scenarios.
Fig. 2 schematically shows a flow chart of a method of high energy electronic 3D imaging according to an embodiment of the present disclosure.
As shown in fig. 2, the high-energy electronic 3D imaging method of the embodiment of the present disclosure includes the following operations:
s1, emitting an electron beam.
Before the electron beam is emitted, a sample to be imaged is placed on a placement platform of a rotating holder. Because the placement platform of the rotating bracket can rotate 180 degrees relative to the bracket base, the preset placement angle of the sample to be imaged needs to be adjusted by 5 degrees each time, and enough first images need to be acquired in order to acquire enough two-dimensional information of the sample to be imaged, before the acquisition of images begins, the placement platform needs to be adjusted to the rotation limit relative to the bracket base, so that the preset placement angle of the sample to be imaged 170 placed on the placement platform is gradually increased in the following operation.
S2, the electron beam is accelerated to obtain a high energy electron beam.
And S3, transmitting the high-energy electron beam and regulating and controlling the beam parameters of the high-energy electron beam.
The quality of the high-energy electron beam is regulated and controlled mainly by regulating the distribution of the high-energy electron beam in a transverse phase space and regulating the transverse distribution uniformity of the high-energy electron beam.
And S4, adjusting the preset placing angle of the sample to be imaged.
The preset placing angle of the to-be-imaged sample is adjusted to be realized by a storage platform of a rotary support for rotatably placing the to-be-imaged sample, and the to-be-imaged sample is not moved after being placed on the storage platform.
According to clockwise or anticlockwise, the platform for placing the sample to be imaged is rotated, so that the angle of the platform is increased by 5 degrees in the clockwise or anticlockwise direction. In this way, even the preset placement angle of the sample to be imaged is increased by 5 °.
And S5, the high-energy electron beam passes through the sample to be imaged to form a first image.
After the high-energy electron beam passes through the point-to-point magnetic lens imaging system, the high-energy electron beam strikes a high-energy electron diffraction fluorescent screen in the detector system to form the first image.
S6, magnifying the first image, and adjusting the sharpness of the first image.
The size and definition of the first image on the high-energy electron diffraction fluorescent screen can be adjusted by adjusting the size and the position of the diaphragm in the magnetic lens system.
S7, acquiring the first image, and storing image data of the first image.
The high-energy electron beam penetrates through the sample to be imaged, and after the high-energy electron beam is collided, scattered and transmitted inside the sample to be imaged, the transverse distribution of the high-energy electron beam is rich in information such as density and thickness of the sample to be imaged on the preset placing angle.
Thus, the first image contains structural information of the sample to be imaged.
S8, repeating the above steps S4-S7, and obtaining the first image of the sample to be imaged at the preset placing angle.
After the first image of the sample to be imaged at the preset placing angle is obtained, the preset placing angle is increased by 5 degrees in the clockwise or anticlockwise direction, the first image of the sample to be imaged at the preset placing angle after adjustment is obtained, and the first images of the sample to be imaged at different preset placing angles are obtained in this way.
S9, processing the first imaged image data of the sample to be imaged by a 3D reconstruction algorithm to obtain a 3D image of the sample to be imaged.
The 3D reconstruction algorithm analyzes and processes all the first images of the sample to be imaged, obtains two-dimensional information of the sample to be imaged at different angles, and performs three-dimensional reconstruction according to the two-dimensional information to obtain the 3D images of the sample to be imaged.
In the embodiment of the present disclosure, the high-energy electron beam may be made to pass through the sample to be imaged to form the first image, in this way, the first images of the sample to be imaged at different angles may be obtained, and then all the image data of the first image of the sample to be imaged is processed through a 3D reconstruction algorithm to obtain a 3D image of the sample to be imaged. In the process, the 3D reconstruction algorithm is applied to the high-energy electronic imaging technology, the high-energy electronic 3D imaging technology is realized by combining the rotating target technology, and the capability of the high-energy electronic imaging technology is improved.
Those skilled in the art will appreciate that various combinations and/or combinations of features recited in the various embodiments and/or claims of the present disclosure can be made, even if such combinations or combinations are not expressly recited in the present disclosure. In particular, various combinations and/or combinations of the features recited in the various embodiments and/or claims of the present disclosure may be made without departing from the spirit or teaching of the present disclosure. All such combinations and/or associations are within the scope of the present disclosure.
While the disclosure has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure as defined by the appended claims and their equivalents. Accordingly, the scope of the present disclosure should not be limited to the above-described embodiments, but should be defined not only by the appended claims, but also by equivalents thereof.
Claims (10)
1. A high-energy electron 3D imaging device, comprising:
an electron gun for emitting an electron beam;
an accelerator for accelerating the electron beam to obtain a high-energy electron beam;
the beam transport assembly is used for transmitting the high-energy electron beam and regulating and controlling the beam quality of the high-energy electron beam;
the method comprises the following steps that a high-energy electron beam penetrates through a sample to be imaged in a transmission process, collides with the sample to be imaged, and is scattered and transmitted inside the sample to be imaged, so that the transverse distribution characteristics of the high-energy electron beam are rich in structural information of the sample to be imaged;
the rotating bracket is used for placing a sample to be imaged and adjusting a preset placing angle of the sample to be imaged;
a detector system for receiving the high-energy electron beam, acquiring a first image formed by receiving the high-energy electron beam, and storing image data of the first image;
a point-to-point magnetic lens imaging system for magnifying the first image and adjusting the sharpness of the first image;
and the 3D reconstruction system is used for processing the image data of the first imaging through a 3D reconstruction algorithm to obtain 3D imaging of the sample to be imaged.
2. The apparatus of claim 1, wherein the position of the rotating support is located between the beam transport assembly and the point-to-point magnetic lens imaging system.
3. The apparatus of claim 2, wherein the rotating bracket comprises:
the object placing platform is used for placing the sample to be imaged;
the support base is used for supporting the object placing platform and adjusting the preset placing angle of the object placing platform, and the object placing platform can rotate 180 degrees relative to the support base.
4. A high-energy electron 3D imaging method applied to the high-energy electron 3D imaging device according to any one of claims 1 to 3, wherein the high-energy electron 3D imaging device comprises an electron gun, an accelerator, a beam transport assembly, a rotating bracket, a point-to-point magnetic lens imaging system, a detector system and a 3D reconstruction system, and the method comprises the following steps:
s1, emitting an electron beam;
s2, accelerating the electron beam to obtain a high-energy electron beam;
s3, transmitting the high-energy electron beam and regulating and controlling beam parameters of the high-energy electron beam;
s4, adjusting the preset placing angle of the sample to be imaged;
s5, the high-energy electron beam passes through the sample to be imaged to form a first image;
s6, magnifying the first image and adjusting the definition of the first image;
s7, acquiring the first imaging and storing the image data of the first imaging;
s8, repeating the steps S4-S7, and obtaining the first imaging of the sample to be imaged at the preset placing angle;
s9, processing the first imaged image data of the sample to be imaged through a 3D reconstruction algorithm to obtain 3D imaging of the sample to be imaged.
5. The method of claim 4, further characterized in that passing the high energy electron beam through the sample to be imaged comprises:
and the high-energy electron beam collides with the sample to be imaged, and after the high-energy electron beam is scattered and transmitted in the sample to be imaged, the transverse distribution characteristics of the high-energy electron beam are rich in the structural information of the sample to be imaged.
6. The method of claim 4, wherein the high energy electron beam passes through the sample to be imaged, and wherein forming the first image comprises:
the high-energy electron beam impinges on a high-energy electron diffraction phosphor screen within the detector system to form the first image.
7. The method of claim 4, wherein the first image comprises structural information of the sample to be imaged.
8. The method of claim 4, wherein adjusting the preset placement angle of the sample to be imaged comprises:
and rotating the object placing platform for placing the sample to be imaged in a clockwise or counterclockwise direction to increase the angle of the object placing platform by 5 degrees in the clockwise or counterclockwise direction.
9. The method according to claim 4, wherein the 3D reconstruction algorithm analyzes all the first images of the sample to be imaged, obtains two-dimensional information of the sample to be imaged at different angles, and performs three-dimensional reconstruction according to the two-dimensional information to obtain the 3D images of the sample to be imaged.
10. The method of claim 4, wherein the adjusting and controlling the beam current quality of the high-energy electron beam comprises adjusting a distribution of the high-energy electron beam in a lateral phase space and adjusting a uniformity of a lateral distribution of the high-energy electron beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910149803.6A CN109872937B (en) | 2019-02-28 | 2019-02-28 | High-energy electronic 3D imaging device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910149803.6A CN109872937B (en) | 2019-02-28 | 2019-02-28 | High-energy electronic 3D imaging device and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109872937A CN109872937A (en) | 2019-06-11 |
| CN109872937B true CN109872937B (en) | 2022-01-04 |
Family
ID=66919491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910149803.6A Active CN109872937B (en) | 2019-02-28 | 2019-02-28 | High-energy electronic 3D imaging device and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109872937B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113053710B (en) * | 2021-03-12 | 2022-03-25 | 清华大学 | Electron stack imaging system with high repetition frequency microwave electron gun |
| CN113325012B (en) * | 2021-05-27 | 2023-06-20 | 中国工程物理研究院应用电子学研究所 | High-energy charged particle imaging device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN207502435U (en) * | 2017-09-27 | 2018-06-15 | 北京数字精准医疗科技有限公司 | A kind of three-dimensional molecular imaging system based on CT and optical fusion |
| CN109346392A (en) * | 2018-10-24 | 2019-02-15 | 中国科学院近代物理研究所 | A kind of three-dimensional high energy electron imaging system and method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2811288B1 (en) * | 2013-06-06 | 2016-08-10 | Fei Company | Method for electron tomography |
-
2019
- 2019-02-28 CN CN201910149803.6A patent/CN109872937B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN207502435U (en) * | 2017-09-27 | 2018-06-15 | 北京数字精准医疗科技有限公司 | A kind of three-dimensional molecular imaging system based on CT and optical fusion |
| CN109346392A (en) * | 2018-10-24 | 2019-02-15 | 中国科学院近代物理研究所 | A kind of three-dimensional high energy electron imaging system and method |
Non-Patent Citations (2)
| Title |
|---|
| Electron radiography;Frank Merrill, et al;《Nuclear Instruments and Methods in Physics Research B》;20070418;第382-386页 * |
| High energy electron radiography scheme with high spatial and temporal resolution in three dimension based on a e-LINAC;Y. ZHAO, et al;《Laser and Particle Beams》;20161231;第1-5页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109872937A (en) | 2019-06-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9103769B2 (en) | Apparatus and methods for controlling electron microscope stages | |
| EP2738786A1 (en) | Method of performing tomographic imaging of a sample in a charged-particle microscope | |
| Cesar et al. | Demonstration of single-shot picosecond time-resolved MeV electron imaging using a compact permanent magnet quadrupole based lens | |
| US20050118065A1 (en) | Apparatus and method for preparing samples | |
| CN109872937B (en) | High-energy electronic 3D imaging device and method | |
| US8633438B2 (en) | Ultrafast electron diffraction device | |
| JP5964055B2 (en) | Particle beam apparatus and method for processing and / or analyzing a sample | |
| JP2014239037A (en) | Method for imaging sample in charged particle apparatus | |
| TWI768001B (en) | Charged particle beam apparatus and sample processing method | |
| CN110176379B (en) | Charged particle beam device and sample processing and observing method | |
| US10636615B2 (en) | Composite beam apparatus | |
| CN108604522A (en) | The method of adjustment of charged particle beam apparatus and charged particle beam apparatus | |
| US20130050431A1 (en) | Method of observing cross-section of cosmetic material | |
| US20210118646A1 (en) | Method for large-area 3d analysis of samples using glancing incidence fib milling | |
| US20110168888A1 (en) | Weak-lens coupling of high current electron sources to electron microscope columns | |
| TWI775818B (en) | Charged Particle Beam Device | |
| US11282672B2 (en) | Charged particle beam apparatus and sample processing observation method | |
| EP3951829A1 (en) | System and method for rf pulsed electron beam based scanning transmission electron microscope | |
| US20130235977A1 (en) | Electromagnetic Scanning Apparatus for Generating a Scanning X-ray Beam | |
| JP7461864B2 (en) | Improved reconstruction algorithm for electronically based holograms. | |
| EP4220680A1 (en) | Charged-particle beam device for diffraction analysis | |
| US20160042914A1 (en) | Achromatic dual-fib instrument for microfabrication and microanalysis | |
| JP2559434B2 (en) | Electron beam exposure apparatus and exposure method | |
| JP2022009601A (en) | Charged particle beam machine and sample processing method | |
| Gelever et al. | Using the Hybrid Nanoscope for Non-destructive Control of Nanostructural Materials |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |