CN109860352A - Based on Fe3The spinning LED and preparation method thereof of N/GaN heterojunction structure - Google Patents
Based on Fe3The spinning LED and preparation method thereof of N/GaN heterojunction structure Download PDFInfo
- Publication number
- CN109860352A CN109860352A CN201910171314.0A CN201910171314A CN109860352A CN 109860352 A CN109860352 A CN 109860352A CN 201910171314 A CN201910171314 A CN 201910171314A CN 109860352 A CN109860352 A CN 109860352A
- Authority
- CN
- China
- Prior art keywords
- layer
- gan
- preparation
- electrode
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Abstract
Based on Fe3The spinning LED and preparation method thereof of N/GaN heterojunction structure includes: substrate, adhesive layer, P electrode, P-GaN layers, active layer, N-GaN layers, Fe in the spinning LED structure from bottom to top3N thin film layer, electrode；The preparation method, includes the following steps: step 1, uses business GaN base common light emitting diode as background diode, and structure includes substrate, adhesive layer, P electrode, P-GaN layers, active layer, N-GaN layers；Step 2, the Fe of one layer (002) orientation is sputtered on GaN base common light emitting diode in step 1 using magnetically controlled sputter method3N thin film layer；Step 3, sample surfaces obtained in step 2 are prepared into Cr/Cu Ohm contact electrode using standard technique.The present invention passes through the selection of spin injection layer material, so that spin injection layer is more matched with the conductance of spin transport layer, and then improves Spin Injection Efficiency.
Description
Technical field
The present invention relates to one kind to be based on Fe3The spinning LED and preparation method thereof of N/GaN heterojunction structure, can apply
In the fields such as optical communication and liquid crystal display.
Background technique
Spintronics, also referred to as magneto-electronics.It utilizes spin and the magnetic moment of electronics, makes in solid state device except charge transport
Outside, spin and the magnetic moment of electronics are additionally added.It is emerging a subject and technology.Applied to the material of spintronics, need
Electronic polarizability with higher and longer Study of Electron Spin Relaxation Time time.Many new materials, such as magnetic semiconductor, half
Metal etc. is widely studied in recent years, meets Spintronics element using required property in the hope of that can have.
The spin injection layer of conventional spin light emitting diode is usually prepared by ferromagnetic metallic materials such as Fe, therefore injection of spinning
Layer and the conductance of spin transport layer mismatch, and then it is low to result in Spin Injection Efficiency.
Summary of the invention
In view of the above-mentioned problems, the present invention proposes one kind based on Fe3The spinning LED and its system of N/GaN heterojunction structure
Preparation Method.
Based on Fe3The spinning LED and preparation method thereof of N/GaN heterojunction structure, the spinning LED,
It from bottom to top include: substrate, adhesive layer, P electrode, P-GaN layers, active layer, N-GaN layers, Fe in structure3N thin film layer, electrode；
The preparation method, includes the following steps:
Step 1, use business GaN base common light emitting diode as background diode, structure includes substrate, adhesive layer, P electricity
Pole, P-GaN layers, active layer, N-GaN layers；
Step 2, one layer (002) orientation is sputtered using magnetically controlled sputter method on GaN base common light emitting diode in step 1
Fe3N thin film layer；
Step 3, sample surfaces obtained in step 2 are prepared into Cr/Cu Ohm contact electrode using standard technique.
Further, in the step 2, Fe is sputtered3N thin film layer, wherein the purity of iron target is not less than 99.99%, condition
For carrier gas: N2And Ar2, N2Flow: 10 sccm, Ar2Flow: 90 sccm, sputtering pressure: 0.5 Pa, sputtering power: 100W splashes
Penetrate thickness: 30-80 nm, underlayer temperature: 400 oC.
The present invention is by the selection of spin injection layer material, so that the conductance of spin injection layer and spin transport layer is more
Match, and then improves Spin Injection Efficiency.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of spinning LED of the present invention.
In figure, 1- substrate, 2- adhesive layer, 3-P electrode, 4-P-GaN layers, 5- active layer, N-GaN layers of 6-, 7-Fe3N thin film
Layer, 8- electrode.
Specific embodiment
Technical solution of the present invention is described in further detail with reference to the accompanying drawings of the specification.
Based on Fe3The spinning LED and preparation method thereof of N/GaN heterojunction structure, in which:
The spinning LED includes: referring to Fig.1 substrate 1, adhesive layer 2, P electrode 3, P- in structure from bottom to top
GaN layer 4, active layer 5, N-GaN layer 6, Fe3N thin film layer 7, electrode 8.
The preparation method, includes the following steps:
Step 1, use business GaN base common light emitting diode as background diode, structure includes substrate 1, adhesive layer 2, P
Electrode 3, P-GaN layer 4, active layer 5, N-GaN layer 6.
Step 2, one layer (002) is sputtered using magnetically controlled sputter method on GaN base common light emitting diode in step 1 to take
To Fe3N thin film layer 7.Wherein, the purity of iron target is not less than 99.99%, and condition is carrier gas: N2And Ar2, N2Flow: 10 sccm,
Ar2Flow: 90 sccm, sputtering pressure: 0.5 Pa, sputtering power: 100W sputters thickness: 30-80 nm, underlayer temperature: 400
ºC。
Step 3, sample surfaces obtained in step 2 are prepared into Cr/Cu Ohm contact electrode 8 using standard technique.
The present invention is by the selection of spin injection layer material, so that the conductance of spin injection layer and spin transport layer is more
Match, and then improves Spin Injection Efficiency.
The foregoing is merely better embodiment of the invention, protection scope of the present invention is not with above embodiment
Limit, as long as those of ordinary skill in the art's equivalent modification or variation made by disclosure according to the present invention, should all be included in power
In the protection scope recorded in sharp claim.
Claims (2)
1. being based on Fe3The spinning LED and preparation method thereof of N/GaN heterojunction structure, it is characterised in that:
The spinning LED includes: substrate, adhesive layer, P electrode, P-GaN layers, active layer, N- in structure from bottom to top
GaN layer, Fe3N thin film layer, electrode；
The preparation method, includes the following steps:
Step 1, use business GaN base common light emitting diode as background diode, structure includes substrate, adhesive layer, P electricity
Pole, P-GaN layers, active layer, N-GaN layers；
Step 2, one layer (002) orientation is sputtered using magnetically controlled sputter method on GaN base common light emitting diode in step 1
Fe3N thin film layer；
Step 3, sample surfaces obtained in step 2 are prepared into Cr/Cu Ohm contact electrode using standard technique.
2. according to claim 1 be based on Fe3The spinning LED and preparation method thereof of N/GaN heterojunction structure, it is special
Sign is: in the step 2, sputtering Fe3N thin film layer, wherein the purity of iron target is not less than 99.99%, and condition is carrier gas: N2With
Ar2, N2Flow: 10 sccm, Ar2Flow: 90 sccm, sputtering pressure: 0.5 Pa, sputtering power: 100W sputters thickness: 30-
80 nm, underlayer temperature: 400 oC.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910171314.0A CN109860352A (en) | 2019-03-07 | 2019-03-07 | Based on Fe3The spinning LED and preparation method thereof of N/GaN heterojunction structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910171314.0A CN109860352A (en) | 2019-03-07 | 2019-03-07 | Based on Fe3The spinning LED and preparation method thereof of N/GaN heterojunction structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109860352A true CN109860352A (en) | 2019-06-07 |
Family
ID=66900087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910171314.0A Pending CN109860352A (en) | 2019-03-07 | 2019-03-07 | Based on Fe3The spinning LED and preparation method thereof of N/GaN heterojunction structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109860352A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101350385A (en) * | 2007-07-17 | 2009-01-21 | 北京大学 | GaN base spinning LED and preparation method thereof |
| CN102723411A (en) * | 2012-01-18 | 2012-10-10 | 许并社 | LED chip structure possessing nickel indium tin oxide spin electron injection layer |
-
2019
- 2019-03-07 CN CN201910171314.0A patent/CN109860352A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101350385A (en) * | 2007-07-17 | 2009-01-21 | 北京大学 | GaN base spinning LED and preparation method thereof |
| CN102723411A (en) * | 2012-01-18 | 2012-10-10 | 许并社 | LED chip structure possessing nickel indium tin oxide spin electron injection layer |
Non-Patent Citations (1)
| Title |
|---|
| Z.K TAO等: "Ferromagnetic Fe3N films grown on GaN(0002)substrates by MOCVD", 《JOURNAL OF CRYSTAL GROWTH》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6345901B2 (en) | Vapor deposition mask, vapor deposition mask manufacturing method, vapor deposition method, and organic EL display device manufacturing method | |
| Kim et al. | Paper as a substrate for inorganic powder electroluminescence devices | |
| US8389344B2 (en) | Methods of manufacturing oxide semiconductor thin film transistor | |
| Nakano et al. | Highly reliable a‐IGZO TFTs on a plastic substrate for flexible AMOLED displays | |
| TW200537972A (en) | Organic light-emitting device and method of manufacturing a cathode in organic light-emitting devices | |
| US20180076385A1 (en) | Method of manufacturing pressure sensor, deposition system, and annealing system | |
| CN100517797C (en) | Laminate, substrate with wiring, organic EL display element, connecting terminal of the element, and their manufacturing method | |
| US20110001136A1 (en) | Oxide semiconductor material, method for manufacturing oxide semiconductor material, electronic device and field effect transistor | |
| US20150171376A1 (en) | Method for manufacturing flexible oled (organic light emitting diode) panel | |
| CN1794477A (en) | Ohm electrode containing gold germanium nickel, indium gallium aluminum nitrogen semiconductor luminous element and its manufacturing method | |
| CN103972246A (en) | Interconnection structure and display device including interconnection structure | |
| JP2003173872A (en) | Alignment method, pattern forming method and alignment device, organic electroluminescent display device and manufacturing method of the same | |
| Bergenti et al. | Spin polarised electrodes for organic light emitting diodes | |
| CN102626002B (en) | For the anode construction body of organic EL element, its production method and organic EL element | |
| CN110335874A (en) | A kind of display base plate, preparation method and its display device | |
| JP2020013998A (en) | HEAVY RARE EARTH ELEMENT DIFFUSION TREATMENT METHOD FOR Nd-Fe-B SYSTEM SINTERED PERMANENT MAGNET | |
| US20210217961A1 (en) | Array substrate, display panel, and manufacturing method thereof | |
| CN109860352A (en) | Based on Fe3The spinning LED and preparation method thereof of N/GaN heterojunction structure | |
| WO2020228491A1 (en) | Oled display screen, display panel and preparation method therefor | |
| CN104993070A (en) | Method for manufacturing flexible OLED device | |
| JP2010209441A (en) | Film deposition mask, and apparatus for manufacturing organic el device | |
| CN106920897A (en) | Flexible OLED panel preparation method | |
| CN107675126A (en) | Metal mask plate and preparation method thereof | |
| Liu et al. | Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes | |
| Tak et al. | Novel technologies for commercialized 55-inch WRGB OLED TV |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190607 |