CN109860283A - A kind of production method and device at the back side IGBT, IGBT - Google Patents
A kind of production method and device at the back side IGBT, IGBT Download PDFInfo
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- CN109860283A CN109860283A CN201910040864.9A CN201910040864A CN109860283A CN 109860283 A CN109860283 A CN 109860283A CN 201910040864 A CN201910040864 A CN 201910040864A CN 109860283 A CN109860283 A CN 109860283A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000005224 laser annealing Methods 0.000 claims abstract description 62
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 53
- 239000010703 silicon Substances 0.000 claims abstract description 53
- 238000002347 injection Methods 0.000 claims abstract description 47
- 239000007924 injection Substances 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 230000007704 transition Effects 0.000 claims abstract description 13
- 150000002500 ions Chemical class 0.000 claims description 73
- 238000002513 implantation Methods 0.000 claims description 66
- -1 phosphonium ion Chemical class 0.000 claims description 32
- 238000010884 ion-beam technique Methods 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 17
- 230000005684 electric field Effects 0.000 abstract description 4
- 238000009825 accumulation Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 9
- 238000004590 computer program Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Abstract
The present invention provides the production methods and device at a kind of back side IGBT, IGBT, form field stop layer using ion implanting mode at the back side of N-type silicon chip, and carry out laser annealing processing to the field stop layer；P+ collector layer is formed in the bottom of the field stop layer, and laser annealing processing successively is carried out to the P+ collector layer of the P+ collector layer of active area and the entire back side；It is respectively formed metal layer on back in the bottom of the P+ collector layer of the P+ collector layer and entire back side of the active area, does not need lithographic procedures, it is only necessary to which primary injection can be formed, and simplified manufacturing process, substantially increased producing efficiency, reduce the production cost.And the present invention realizes the P+ collector layer of active area and the P+ collector layer laser annealing at the entire back side by different laser annealing conditions, can reduce termination environment P+ injection efficiency, reduces the accumulation of transition region electric field, improves IGBT reliability.
Description
Technical field
The present invention relates to power electronic devices technical fields, and in particular to a kind of production method at the back side IGBT, IGBT and
Device.
Background technique
In recent years, more sets that put into operation in network system are based on high-power insulated gate bipolar transistor (IGBT) device
The flexible transmission of part is equipped, to safe and stable operation, the grid-connected and long distance power transmission of extensive new energy etc. of network system
Aspect plays significant exemplary role.
With the continuous development of power electronic technique, the promotion of transmission line of electricity voltage, undoubtedly to the pressure-resistant performance of IGBT and
Reliability is put forward higher requirements.In order to improve IGBT pressure resistance performance and reliability, need to reduce in reverse blocking and turn off process
Chip internal electric field concentration effect.Igbt chip structure is broadly divided into three parts: active area, transition region and termination environment.General IGBT
Back side P+ structure uses furnace anneal mode, and not only activity ratio is too low, but also can only realize active area, transition region and termination environment one
The activity ratio of cause.Because termination environment is with active area, there are identical back side P+ structures.In reverse blocking mode and turn off process, by
It is injected in the hole of back side P+, termination environment hole is extracted and is concentrated at transition region PN junction, and transition region electric field is caused to accumulate, and reduces
The pressure resistance and reliability of chip.To realize back side P+ active area hole injection efficiency different from termination environment, transition region electricity is reduced
Field build-up effect, need to reduce termination environment back side P+ injection efficiency.And P+ injection efficiency reduction in the active area back side causes chip to be connected
Pressure drop increases.For the reliability for not influencing chip conduction voltage drop and raising chip, the prior art is usually lithographically formed by the back side
Ion implanting barrier structure, then by the different levels of doping of the active area and termination environment P+ of injection realization twice, so that control has
Source region injection efficiency different from termination environment P+'s improves chip performance, and this method not only needs to increase photo-mask process, but also needs
It injects twice, complicated for operation, cost is excessively high.
Summary of the invention
In order to overcome the shortcomings of it is above-mentioned it is complicated for operation in the prior art be cut into that this is excessively high, the present invention provide a kind of IGBT,
The production method and device at the back side IGBT form field stop layer using ion implanting mode at the back side of N-type silicon chip, and to described
Field stop layer carries out laser annealing processing；P+ collector layer is formed in the bottom of the field stop layer, and successively to the P of active area
+ collector layer and the P+ collector layer at the entire back side carry out laser annealing processing；In the P+ collector layer of the active area and whole
The bottom of the P+ collector layer at a back side is respectively formed metal layer on back, does not need lithographic procedures, easy to operate, reduces production
Cost.
In order to achieve the above-mentioned object of the invention, the present invention adopts the following technical scheme that:
On the one hand, the present invention provides a kind of production method at back side IGBT, comprising:
Field stop layer is formed using ion implanting mode at the back side of N-type silicon chip, and laser is carried out to the field stop layer
Annealing；
P+ collector layer is formed in the bottom of the field stop layer, and successively to the P+ collector layer of active area and entire back
The P+ collector layer in face carries out laser annealing processing；
Back metal is respectively formed in the bottom of the P+ collector layer of the P+ collector layer and entire back side of the active area
Layer.
Before the back side in N-type silicon chip forms field stop layer using ion implanting mode, comprising:
The back side of the N-type silicon chip is successively carried out being thinned and silicon corrodes, wherein thickness thinning is resistance to according to the IGBT's
Grade is pressed to determine.
The back side in N-type silicon chip forms field stop layer using ion implanting mode, comprising:
Field stop layer is formed by ion implanting mode twice at the back side of the N-type silicon chip；
Wherein, injection uses energetic ion injection mode for the first time；Second of injection uses low energy ion beam implantation.
In the energetic ion injection mode, Implantation Energy is 1~2MeV, and implantation dosage is 1E11~1E13cm-2；
In the low energy ion beam implantation mode, Implantation Energy is 100~500KeV, and implantation dosage is 5E11~1E13cm-2；
The ion is hydrogen ion or phosphonium ion.
It is described that laser annealing processing is carried out to the field stop layer, comprising:
The field stop layer of active area, transition region and termination environment is alternately irradiated using two beam laser, wherein the two beams laser
Interval time be 0~1000ns, wavelength be 500nm~600nm, energy be 2.0~4.0J.
P+ collector layer is formed on the bottom in the field stop layer, comprising:
P+ collector layer is formed by primary ions injection mode in the bottom of the field stop layer；
The Implantation Energy of the ion is 10KeV~100KeV, and implantation dosage is 5E12~8E13cm-2；
The ion is boron ion or boron difluoride ion.
It is described that laser annealing processing, packet successively are carried out to the P+ collector layer of the P+ collector layer of active area and the entire back side
It includes:
The P+ collector layer of active area is alternately irradiated using the identical laser of two beam wavelength, wherein the two beams laser
Interval time is 500~1000ns, and energy is 1.0~2.0J；
The P+ collector layer at the entire back side is alternately irradiated using two beam laser, wherein the interval time of the two beams laser
For 0~1000ns, energy is 0~1.0J；
The wavelength of the laser is 500nm~600nm.
On the other hand, the present invention provides a kind of producing device at back side IGBT, comprising:
First laser annealing module, for forming field stop layer using ion implanting mode at the back side of N-type silicon chip, and it is right
The field stop layer carries out laser annealing processing；
Second laser annealing module, for forming P+ collector layer in the bottom of the field stop layer, and successively to active
The P+ collector layer in area and the P+ collector layer at the entire back side carry out laser annealing processing；
Generation module, the bottom difference of the P+ collector layer for the P+ collector layer and entire back side in the active area
Form metal layer on back.
Described device further includes processing module, and the processing module is for successively subtracting the back side of the N-type silicon chip
Thin and silicon corrosion, wherein thickness thinning is determined according to the stress levels of the IGBT.
The first laser annealing module includes the first generation unit, and first generation unit is specifically used for:
Field stop layer is formed by ion implanting mode twice at the back side of the N-type silicon chip；
Wherein, injection uses energetic ion injection mode for the first time；Second of injection uses low energy ion beam implantation.
In the energetic ion injection mode, Implantation Energy is 1~2MeV, and implantation dosage is 1E11~1E13cm-2；
In the low energy ion beam implantation mode, Implantation Energy is 100~500KeV, and implantation dosage is 5E11~1E13cm-2；
The ion is hydrogen ion or phosphonium ion.
The first laser annealing module includes first laser annealing unit, and the first laser annealing unit is specifically used
In:
The second field stop layer of active area, transition region and termination environment is alternately irradiated using two beam laser, wherein two beam laser
Interval time be 0~1000ns, wavelength be 500nm~600nm, energy be 2.0~4.0J.
The second laser annealing module includes the second generation unit, and second generation unit is specifically used for:
P+ collector layer is formed by primary ions injection mode in the bottom of the field stop layer；
The Implantation Energy of the ion is 10KeV~100KeV, and implantation dosage is 5E12~8E13cm-2；
The ion is boron ion or boron difluoride ion.
The second laser annealing module includes second laser annealing unit, and the second laser annealing unit is specifically used
In:
The P+ collector layer of active area is alternately irradiated using the identical laser of two beam wavelength；Wherein, the interval of two beam laser
Time is 500~1000ns, and energy is 1.0~2.0J；
The P+ collector layer at the entire back side is alternately irradiated using two beam laser, wherein the interval time of two beam laser is 0~
1000ns, energy are 0~1.0J；
The wavelength of the laser is 500nm~600nm.
In another aspect, the present invention also provides a kind of IGBT, including N-type silicon chip and using the N of production method production
The backside structure of type silicon wafer:
The backside structure includes the field stop layer for being set in turn in the N-type silicon chip back side, P+ collector layer and the back side
Metal layer.
The field stop layer includes first end formed at the back side of the N-type silicon chip by ion implanting mode twice
Only layer and the second field stop layer；
Wherein, first field stop layer is formed using energetic ion injection mode；Second field stop layer is using low
Energy ion implanting mode is formed.
First field stop layer include Implantation Energy be 1~2MeV, implantation dosage is 1E11~1E13cm-2Hydrogen ion
Or phosphonium ion；
Second field stop layer include Implantation Energy be 100~500KeV, implantation dosage is 5E11~1E13cm-2Hydrogen
Ion or phosphonium ion.
The P+ collector layer includes by being formed in the bottom of the field stop layer using primary ions injection mode
The P+ collector layer of active area and the P+ collector layer at the entire back side.
The P+ collector layer of the active area and the P+ collector layer at the entire back side include: Implantation Energy be 10KeV~
100KeV, implantation dosage are 5E12~8E13cm-2Boron ion or boron difluoride ion.
Compared with the immediate prior art, technical solution provided by the invention is had the advantages that
In technical solution provided by the invention, field stop layer is formed using ion implanting mode at the back side of N-type silicon chip, and
Laser annealing processing is carried out to the field stop layer；P+ collector layer is formed in the bottom of the field stop layer, and successively to having
The P+ collector layer of source region and the P+ collector layer at the entire back side carry out laser annealing processing；In the P+ collector of the active area
The bottom of layer and the P+ collector layer at the entire back side is respectively formed metal layer on back, does not need lithographic procedures, easy to operate, reduces
Cost of manufacture；
P+ collector layer in the present invention, which only needs once to inject, to be formed, and simplify manufacturing process, substantially increase
Producing efficiency；
The present invention realizes the P+ collector layer of active area and the P+ collector at the entire back side by different laser annealing conditions
Layer laser annealing, can reduce termination environment P+ injection efficiency, reduces the accumulation of transition region electric field, improves IGBT reliability.
Detailed description of the invention
Fig. 1 is the production method flow chart at the back side IGBT in the embodiment of the present invention；
Fig. 2 is structural schematic diagram after the completion of IGBT Facad structure in the embodiment of the present invention；
Fig. 3 is that the first field stop layer of IGBT forms schematic diagram in the embodiment of the present invention；
Fig. 4 is that the second field stop layer of IGBT forms schematic diagram in the embodiment of the present invention；
Fig. 5 is the second field stop layer of IGBT laser annealing schematic diagram in the embodiment of the present invention；
Fig. 6 is that IGBTP+ collector layer forms schematic diagram in the embodiment of the present invention；
Fig. 7 is the P+ collector layer laser annealing schematic diagram of IGBT active area in the embodiment of the present invention；
Fig. 8 is the entire back side P+ collector layer laser annealing schematic diagram of IGBT in the embodiment of the present invention；
Fig. 9 is that igbt chip metal layer on back forms schematic diagram in the embodiment of the present invention；
1 indicates N-type silicon chip；2 indicate the first doping p-well；21 indicate termination environment P ring；22 indicate P+ collector layer；3 indicate
Second doping p-well；4 indicate N+ emitter；41 indicate that termination environment N-type ends ring；5 indicate polysilicon gate；6 indicate gate oxidation
Layer；61 indicate termination environment oxide layer；7 indicate active area front metal；71 indicate termination environment field plate metal；72 indicate back metal
Layer；8 indicate termination environment passivation layer；9 indicate the first field stop layer；10 indicate the second field stop layer.
Specific embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings.
Embodiment 1
The embodiment of the present invention 1 provides a kind of production method at back side IGBT, and specific flow chart is as shown in Figure 1, specific mistake
Journey is as follows:
S101: using ion implanting mode to form field stop layer at the back side of N-type silicon chip 1, (field stop layer includes successively shape
At the first field stop layer 9 and the second field stop layer 10), and to the second field stop layer 10 carry out laser annealing processing；
S102: P+ collector layer 22 is formed in the bottom of the second field stop layer 10, and successively to the P+ collector of active area
Layer 22 and the P+ collector layer 22 at the entire back side carry out laser annealing processing；
S103: the back side is respectively formed in the bottom of the P+ collector layer 22 of the P+ collector layer 22 and entire back side of active area
Metal layer 72, as shown in Figure 9.
The back side in N-type silicon chip 1 of above-mentioned S101 sequentially forms the first field stop layer 9 and second using ion implanting mode
Before field stop layer 10, Facad structure first is formed in the front of N-type silicon chip 1 according to common process, N-type silicon chip is according to different
The resistance to pressure request of IGBT device selects different doping concentration or resistivity；Then by wafer inversion, to the back side of N-type silicon chip 1
It successively carries out being thinned and silicon corrodes, so that backside surface is smooth, thickness thinning is determined according to the stress levels of IGBT.
As shown in Fig. 2, Facad structure includes that N-type silicon chip 1 positive first adulterates p-well 2, termination environment P ring 21, second adulterates
It is p-well 3, N+ emitter 4, termination environment N-type cut-off ring 41, polysilicon gate 5, grid oxic horizon 6, termination environment oxide layer 61, active
Area's front metal 7, termination environment field plate metal 71, termination environment passivation layer 8.
The back side in N-type silicon chip 1 in above-mentioned S101 sequentially forms the first field stop layer 9 (such as using ion implanting mode
Shown in Fig. 3) and the second field stop layer 10 (as shown in Figure 4), comprising:
Field stop layer is formed by ion implanting mode twice at the back side of N-type silicon chip 1, that is, forms the first field stop layer 9
With the second field stop layer 10；
Wherein, injection uses energetic ion injection mode for the first time；Second of injection uses low energy ion beam implantation, and first
For the doping level of field stop layer 9 less than the doping level of the second field stop layer 10, i.e. the first field stop layer 9 is to be lightly doped, second end
Only layer 10 is heavy doping.
The first field stop layer 9 and the second field stop layer 10 are formed by two secondary ions (hydrogen ion or phosphonium ion) injection mode
During, in energetic ion injection mode, the Implantation Energy of ion is 1~2MeV, and implantation dosage is 1E11~1E13cm-2；
In low energy ion beam implantation mode, the Implantation Energy of ion is 100~500KeV, implantation dosage be 5E11~
1E13cm-2；
In above-mentioned S101, laser annealing processing is carried out to field stop layer and (laser annealing is carried out to the second field stop layer 10
Processing), as shown in figure 5, detailed process are as follows:
The second field stop layer 10 of active area, transition region and termination environment is alternately irradiated using two beam laser, two beam laser
Interval time is 0~1000ns, and wavelength is 500nm~600nm, and energy is 2.0~4.0J.
In above-mentioned S102, P+ collector layer 22 (as shown in Figure 6) is formed in the bottom of the second field stop layer 10, detailed process
Are as follows:
P is formed by primary ions (boron ion or boron difluoride ion) injection mode in the bottom of the second field stop layer 10
+ collector layer 22；
The Implantation Energy of boron ion or boron difluoride ion is 10KeV~100KeV, and implantation dosage is 5E12~8E13cm-2；
In above-mentioned S102, laser successively is carried out to the P+ collector layer 22 of the P+ collector layer 22 of active area and the entire back side
Annealing, detailed process are as follows:
Use two beam wavelength it is identical (wavelength for 500nm~600nm) laser alternately irradiate active area P+ collector layer
22, as shown in fig. 7, the interval time of two beam laser is 500~1000ns, energy is 1.0~2.0J；
The P+ collector layer 22 that the entire back side is alternately irradiated using two beam laser, as shown in figure 8, when the interval of two beam laser
Between be 0~1000ns, energy be 0~1.0J.
Embodiment 2
Based on the same inventive concept, the embodiment of the present invention 2 also provides a kind of producing device at back side IGBT, including first swashs
Photo-annealing module, second laser annealing module and generation module, are below described in detail the function of above-mentioned several modules:
First laser annealing module, for forming field stop layer (field using ion implanting mode at the back side of N-type silicon chip 1
Stop layer includes sequentially forming the first field stop layer 9 and the second field stop layer 10), and laser is carried out to the second field stop layer 10 and is moved back
Fire processing；
Second laser annealing module, for forming P+ collector layer 22 in the bottom of the second field stop layer 10, and it is successively right
The P+ collector layer 22 of active area and the P+ collector layer 22 at the entire back side carry out laser annealing processing；
The bottom of generation module, the P+ collector layer 22 for the P+ collector layer 22 and entire back side in active area is formed
Metal layer on back 72.
The device that the embodiment of the present invention 2 provides further includes processing module, processing module be used for the back side of N-type silicon chip 1 according to
Secondary to carry out the corrosion of thinned and silicon, thickness thinning is determined according to the stress levels of IGBT.
First laser annealing module includes the first generation unit, and the first generation unit is at the back side of N-type silicon chip 1 by twice
Ion (hydrogen ion or phosphonium ion) injection mode forms field stop layer, that is, forms the first field stop layer 9 and the second field stop layer 10；
Injection uses energetic ion injection mode for the first time；Second injection uses low energy ion beam implantation, and the first field stop layer 9 is mixed
Doping level of the miscellaneous degree less than the second field stop layer 10.
In energetic ion injection mode, the Implantation Energy of ion is 1~2MeV, and implantation dosage is 1E11~1E13cm-2；
In low energy ion beam implantation, the Implantation Energy of ion is 100~500KeV, and implantation dosage is 5E11~1E13cm-2；
First laser annealing module includes first laser annealing unit, and first laser annealing unit is replaced using two beam laser
The second field stop layer 10 of active area, transition region and termination environment is irradiated, the interval time of two beam laser is 0~1000ns, wavelength
For 500nm~600nm, energy is 2.0~4.0J.
Second laser annealing module includes the second generation unit, and the second generation unit is logical in the bottom of the second field stop layer 10
It crosses primary ions (boron ion or boron difluoride ion) injection mode and forms P+ collector layer 22；
The Implantation Energy of ion is 10KeV~100KeV, and implantation dosage is 5E12~8E13cm-2；
Second laser annealing module includes second laser annealing unit, and second laser annealing unit first uses two beam wavelength phases
The P+ collector layer 22 that active area is alternately irradiated with the laser of (wavelength is 500nm~600nm), realizes the P+ collector of active area
The laser annealing of layer 22, the interval time of two beam laser are 500~1000ns, and energy is 1.0~2.0J；Then swashed using two beams
Light alternately irradiates the P+ collector layer 22 at the entire back side, realizes the laser annealing of the P+ collector layer 22 at the entire back side, and two beams swash
The interval time of light is 0~1000ns, and energy is 0~1.0J；
Embodiment 3
The embodiment of the present invention 3 provides a kind of IGBT, the N-type silicon chip including N-type silicon chip and use production method production
Backside structure:
Backside structure includes the field stop layer for being set in turn in the N-type silicon chip back side, P+ collector layer 22 and back-side gold
Belong to layer 72.
Field stop layer includes the first field stop layer formed at the back side of the N-type silicon chip by ion implanting mode twice
2 and second field stop layer 3；
Wherein, the first field stop layer 2 is formed using energetic ion injection mode；Second field stop layer is infused using low energy ion
Enter mode to be formed.
First field stop layer 2 include Implantation Energy be 1~2MeV, implantation dosage is 1E11~1E13cm-2Hydrogen ion or
Phosphonium ion；
Second field stop layer 3 include Implantation Energy be 100~500KeV, implantation dosage is 5E11~1E13cm-2Hydrogen from
Son or phosphonium ion.
P+ collector layer 22 includes the active area by using primary ions injection mode to be formed in the bottom of field stop layer
P+ collector layer and the entire back side P+ collector layer.
The P+ collector layer of active area and the P+ collector layer at the entire back side include: Implantation Energy be 10KeV~
100KeV, implantation dosage are 5E12~8E13cm-2Boron ion or boron difluoride ion.
Above-mentioned IGBT further includes Facad structure, and Facad structure includes that N-type silicon chip 1 positive first adulterates p-well 2, termination environment P
Ring 21, second adulterates p-well 3, N+ emitter 4, termination environment N-type cut-off ring 41, polysilicon gate 5, oxide layer, front metal and end
Petiolarea passivation layer 8.
Oxide layer includes grid oxic horizon 6 and termination environment oxide layer 61, and front metal includes active area front metal 7 and end
Petiolarea field plate metal 71.
The doping level of second doping p-well 3 is greater than the doping level of the first doping p-well 2, i.e., the second doping p-well 3 is heavy doping P
Trap, the first doping p-well is that p-well is lightly doped.
First doping p-well 2, second adulterates p-well 3, termination environment P ring 21 and termination environment N-type cut-off ring 41 and is all set in N-type silicon
Inside piece 1, and termination environment P ring 21 is located between the first doping p-well 2 and termination environment N-type cut-off ring 41；
Active area front metal 7 and termination environment field plate metal 71 are located at the second doping p-well 2 and the cut-off of termination environment N-type
41 surface of ring, grid oxic horizon 6 are set to 5 surface of polysilicon gate, termination environment oxide layer 61, termination environment field plate metal 71 and end
Petiolarea passivation layer 8 is positive according to N-type silicon chip 1 is set in turn in from the inside of N-type silicon chip 1 to positive sequence.
For convenience of description, each section of apparatus described above is divided into various modules with function or unit describes respectively.
Certainly, each module or the function of unit can be realized in same or multiple softwares or hardware when implementing the application.
It should be understood by those skilled in the art that, embodiments herein can provide as method, system or computer program
Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the application
Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the application, which can be used in one or more,
The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) produces
The form of product.
The application is referring to method, the process of equipment (system) and computer program product according to the embodiment of the present application
Figure and/or block diagram describe.It should be understood that every one stream in flowchart and/or the block diagram can be realized by computer program instructions
The combination of process and/or box in journey and/or box and flowchart and/or the block diagram.It can provide these computer programs
Instruct the processor of general purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices to produce
A raw machine, so that being generated by the instruction that computer or the processor of other programmable data processing devices execute for real
The device for the function of being specified in present one or more flows of the flowchart and/or one or more blocks of the block diagram.
These computer program instructions, which may also be stored in, is able to guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works, so that it includes referring to that instruction stored in the computer readable memory, which generates,
Enable the manufacture of device, the command device realize in one box of one or more flows of the flowchart and/or block diagram or
The function of being specified in multiple boxes.
These computer program instructions also can be loaded onto a computer or other programmable data processing device, so that counting
Series of operation steps are executed on calculation machine or other programmable devices to generate computer implemented processing, thus in computer or
The instruction executed on other programmable devices is provided for realizing in one or more flows of the flowchart and/or block diagram one
The step of function of being specified in a box or multiple boxes.
Finally it should be noted that: the above embodiments are merely illustrative of the technical scheme of the present invention and are not intended to be limiting thereof, institute
The those of ordinary skill in category field can still modify to a specific embodiment of the invention referring to above-described embodiment or
Equivalent replacement, these are applying for this pending hair without departing from any modification of spirit and scope of the invention or equivalent replacement
Within bright claims.
Claims (19)
1. a kind of production method at the back side IGBT characterized by comprising
Field stop layer is formed using ion implanting mode at the back side of N-type silicon chip, and laser annealing is carried out to the field stop layer
Processing；
P+ collector layer is formed in the bottom of the field stop layer, and successively to the P+ collector layer of active area and the entire back side
P+ collector layer carries out laser annealing processing；
Metal layer on back is respectively formed in the bottom of the P+ collector layer of the P+ collector layer and entire back side of the active area.
2. the production method at the back side IGBT according to claim 1, which is characterized in that adopt at the back side in N-type silicon chip
It is formed before field stop layer with ion implanting mode, comprising:
The back side of the N-type silicon chip is successively carried out being thinned and silicon corrodes；
Wherein, thickness thinning is determined according to the stress levels of the IGBT.
3. the production method at the back side IGBT according to claim 1, which is characterized in that adopt at the back side in N-type silicon chip
Field stop layer is formed with ion implanting mode, comprising:
Field stop layer is formed by ion implanting mode twice at the back side of the N-type silicon chip；
Wherein, injection uses energetic ion injection mode for the first time；Second of injection uses low energy ion beam implantation.
4. the production method at the back side IGBT according to claim 2, which is characterized in that the energetic ion injection mode
In: Implantation Energy is 1~2MeV, and implantation dosage is 1E11~1E13cm-2；
In the low energy ion beam implantation mode: Implantation Energy is 100~500KeV, and implantation dosage is 5E11~1E13cm-2；
The ion is hydrogen ion or phosphonium ion.
5. the production method at the back side IGBT according to claim 3, which is characterized in that described to be carried out to the field stop layer
Laser annealing processing, comprising:
The field stop layer of active area, transition region and termination environment is alternately irradiated using two beam laser；
Wherein, the interval time of the two beams laser be 0~1000ns, wavelength be 500nm~600nm, energy be 2.0~
4.0J。
6. the production method at the back side IGBT according to claim 5, which is characterized in that the bottom in the field stop layer
Portion forms P+ collector layer, comprising:
P+ collector layer is formed by primary ions injection mode in the bottom of the field stop layer；
The Implantation Energy of the ion is 10KeV~100KeV, and implantation dosage is 5E12~8E13cm-2；
The ion is boron ion or boron difluoride ion.
7. the production method at the back side IGBT according to claim 1, which is characterized in that described successively to the P+ collection of active area
Electrode layer and the P+ collector layer at the entire back side carry out laser annealing processing, comprising:
The P+ collector layer of active area is alternately irradiated using the identical laser of two beam wavelength；Wherein, the interval of the two beams laser
Time is 500~1000ns, and energy is 1.0~2.0J；
The P+ collector layer at the entire back side is alternately irradiated using two beam laser；Wherein, the interval time of two beam laser be 0~
1000ns, energy are 0~1.0J；
The wavelength of the laser is 500nm~600nm.
8. a kind of producing device at the back side IGBT characterized by comprising
First laser annealing module, for forming field stop layer using ion implanting mode at the back side of N-type silicon chip, and to described
Field stop layer carries out laser annealing processing；
Second laser annealing module, for forming P+ collector layer in the bottom of the field stop layer, and successively to the P of active area
+ collector layer and the P+ collector layer at the entire back side carry out laser annealing processing；
The bottom of generation module, the P+ collector layer for the P+ collector layer and entire back side in the active area is respectively formed
Metal layer on back.
9. the producing device at the back side IGBT according to claim 8, which is characterized in that described device further includes processing mould
Block, the processing module are used for:
The back side of the N-type silicon chip is successively carried out being thinned and silicon corrodes；
Wherein, thickness thinning is determined according to the stress levels of the IGBT.
10. the producing device at the back side IGBT according to claim 8, which is characterized in that the first laser annealing module
Including the first generation unit, first generation unit is specifically used for:
Field stop layer is formed by ion implanting mode twice at the back side of the N-type silicon chip；
Wherein, injection uses energetic ion injection mode for the first time；Second of injection uses low energy ion beam implantation.
11. the producing device at the back side IGBT according to claim 10, which is characterized in that the energetic ion injection mode
In: Implantation Energy is 1~2MeV, and implantation dosage is 1E11~1E13cm-2；
In the low energy ion beam implantation mode: Implantation Energy is 100~500KeV, and implantation dosage is 5E11~1E13cm-2；
The ion is hydrogen ion or phosphonium ion.
12. the producing device at the back side IGBT according to claim 10, which is characterized in that the first laser annealing module
Including first laser annealing unit, the first laser annealing unit is specifically used for:
The second field stop layer of active area, transition region and termination environment is alternately irradiated using two beam laser；
Wherein, the interval time of the two beams laser be 0~1000ns, wavelength be 500nm~600nm, energy be 2.0~
4.0J。
13. the producing device at the back side IGBT according to claim 12, which is characterized in that the second laser annealing module
Including the second generation unit, second generation unit is specifically used for:
P+ collector layer is formed by primary ions injection mode in the bottom of the field stop layer；
The Implantation Energy of the ion is 10KeV~100KeV, and implantation dosage is 5E12~8E13cm-2；
The ion is boron ion or boron difluoride ion.
14. the producing device at the back side IGBT according to claim 8, which is characterized in that the second laser annealing module
Including second laser annealing unit, the second laser annealing unit is specifically used for:
The P+ collector layer of active area is alternately irradiated using the identical laser of two beam wavelength；Wherein, the interval of the two beams laser
Time is 500~1000ns, and energy is 1.0~2.0J；
The P+ collector layer at the entire back side is alternately irradiated using two beam laser；Wherein, the interval time of the two beams laser be 0~
1000ns, energy are 0~1.0J；
The wavelength of the laser is 500nm~600nm.
15. a kind of IGBT, which is characterized in that including N-type silicon chip and use production method system as claimed in claim 1 to 7
The backside structure for the N-type silicon chip made:
The backside structure includes the field stop layer for being set in turn in the N-type silicon chip back side, P+ collector layer and back metal
Layer.
16. IGBT according to claim 15, which is characterized in that the field stop layer includes the back in the N-type silicon chip
The first field stop layer and the second field stop layer that face is formed by ion implanting mode twice；
Wherein, first field stop layer is formed using energetic ion injection mode；Second field stop layer using low energy from
Sub- injection mode is formed.
17. IGBT according to claim 16, which is characterized in that first field stop layer include Implantation Energy be 1~
2MeV, implantation dosage are 1E11~1E13cm-2Hydrogen ion or phosphonium ion；
Second field stop layer include Implantation Energy be 100~500KeV, implantation dosage is 5E11~1E13cm-2Hydrogen ion
Or phosphonium ion.
18. IGBT according to claim 15, which is characterized in that the P+ collector layer includes by terminating in the field
The P+ collector layer for the active area that the bottom of layer is formed using primary ions injection mode and the P+ collector layer at the entire back side.
19. IGBT according to claim 18, which is characterized in that the P+ collector layer of the active area and the entire back side
P+ collector layer includes: that Implantation Energy is 10KeV~100KeV, and implantation dosage is 5E12~8E13cm-2Boron ion or two
It is fluorinated boron ion.
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