CN109860029A - A kind of production method and MOS substrat structure of MOS substrate - Google Patents
A kind of production method and MOS substrat structure of MOS substrate Download PDFInfo
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- CN109860029A CN109860029A CN201910172156.0A CN201910172156A CN109860029A CN 109860029 A CN109860029 A CN 109860029A CN 201910172156 A CN201910172156 A CN 201910172156A CN 109860029 A CN109860029 A CN 109860029A
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Abstract
The present invention provides the production method and MOS substrat structure of a kind of MOS substrate.The production method of MOS substrate of the invention, during making amorphous germanium layer, by the way of multistep film forming, and it is surface-treated using phosphorus-containing compound gas by CVD after every one-step film forming and phosphonium ion injection is carried out to amorphous germanium thin film, finally obtain the amorphous germanium layer of phosphonium ion doping, it is formed after channel region without being individually doped to channel region, is effectively simplified processing procedure, reduces production cost.MOS substrat structure of the invention, channel region complete phosphonium ion injection when amorphous germanium forms a film, and without individually carrying out channel dopping process, production is simple, and production cost is low.
Description
Technical field
The present invention relates to the field MOS more particularly to the production methods and MOS substrat structure of a kind of MOS substrate.
Background technique
In MOS substrate, for the threshold voltage of adjusting device, need to carry out channel doping.Usually in grid oxidation film
After formation, a small amount of alms giver or acceptor impurity ion implanting are entered by ion embedding technology in channel region, thus complete
It is adulterated at channel.And in ion implantation manufacture process, realize that ion implantation is most commonly seen with ion implantation apparatus, as channel region, N-type are heavily doped
Miscellaneous area, N-type lightly doped district and P-doped zone etc. generally use ion implantation apparatus implanting ions, and are carrying out per together
When ion implantation manufacture process, it is required to complete using one of light shield, and ion implantation manufacture process is harsh to the required precision of light shield, simultaneously
The problems such as there are board debugging is difficult, and time-consuming.
Summary of the invention
The purpose of the present invention is to provide a kind of production method of MOS substrate and a kind of MOS substrat structures, can save and dechannel
Dopping process simplifies processing procedure, reduces production cost.
To achieve the above object, the present invention provides a kind of production methods of MOS substrate comprising following steps: step
1, substrate (1) is provided, deposits transition zone (2) on the substrate (1)；Step 2 deposits an amorphous on the transition zone (2)
Germanium film (301), and it is passed through phosphorus-containing compound gas on the amorphous germanium thin film (301) surface, using chemical vapor deposition
Method is surface-treated the amorphous germanium thin film (301) so that the surface doping phosphorus of the amorphous germanium thin film (301) from
Son；Step 3, the operation for repeating step 2 for several times, obtain the amorphous germanium thin film (301) of several layer surfaces doping phosphonium ions, and described several layers
Amorphous germanium thin film (301) superposition of surface doping phosphonium ion constitutes amorphous germanium layer (3)；Step 4, to the amorphous germanium layer (3) into
Row annealing, the middle hydrogen ion adulterated of removal amorphous germanium layer (3), while to be doped to every layer of amorphous germanium thin film (301) table
The phosphonium ion in face is uniformly diffused into entire amorphous germanium layer (3), is realized and is adulterated to the phosphonium ion of entire amorphous germanium layer (3)；Step
5, ion implanting twice is carried out to the amorphous germanium layer (3) after phosphonium ion doping using twice light shield, obtains being located at described non-
Two N-type heavily doped regions (31) of brilliant germanium layer (3) two sides, the phosphonium ion doped channel regions being located in the middle part of the amorphous germanium layer (3)
(33) and two N-type lightly doped districts between described two N-type heavily doped regions (31) and phosphonium ion doped channel regions (33)
(32)；Step 6, sequentially formed on the amorphous germanium layer (3) gate insulating layer (5), grid (6), interlayer insulating film (7) and
Source, drain electrode (81,82).
As a preferred solution, the substrate (1) is glass substrate or plastic supporting base.
As a preferred solution, the transition zone (2) is silicon oxide layer, silicon nitride layer or silicon oxide layer and nitridation
The composite layer of silicon layer.
As a preferred solution, amorphous germanium thin film described in chemical vapor deposition is passed through using silane and hydrogen
(301)。
As a preferred solution, the phosphorus-containing compound gas is second phosphine.
As a preferred solution, the number that step 2 operates is repeated in the step 3 to be greater than or equal to once.
As a preferred solution, step 5 is added using boiler tube, quasi-molecule laser annealing equipment or chemical vapor deposition
Hot cell makes annealing treatment the amorphous germanium layer (3).
As a preferred solution, the interlayer insulating film (7) or the transition zone (2) are silicon oxide layer, nitridation
The composite layer of silicon layer or silicon oxide layer and silicon nitride layer.MOS substrat structure provided by the invention comprising the substrate (1),
The transition zone (2) on the substrate (1), is set to institute at the amorphous germanium layer (3) on the transition zone (2)
It states the gate insulating layer (5) on amorphous germanium layer (3), the grid (6) being set on the gate insulating layer (5), be set to
The interlayer insulating film (7) of the grid (6) is covered on the gate insulating layer (5) and is set to the interlayer insulating film (7)
On the source electrode (81) and the drain electrode (82)；
The amorphous germanium layer (3) includes corresponding to the source electrode (81) and the leakage positioned at the two sides of the amorphous germanium layer (3)
Two N-type heavily doped regions (31) below pole (82), the middle part for being located at the amorphous germanium layer (3) correspond to the grid (6) lower section
The phosphonium ion doped channel regions (33) and be located at described two N-type heavily doped regions (31) and the phosphonium ion doped channel
Two N-type lightly doped districts (32) between area (33)；Institute is corresponded on the gate insulating layer (5) and the interlayer insulating film (7)
It states and is respectively equipped with via hole (80) above two N-type heavily doped regions (31), the source electrode (81) passes through respectively with the drain electrode (82)
It is in contact by the via hole (80) with the N-type heavily doped region (31).The transition zone (2) be silicon oxide layer, silicon nitride layer or
The composite layer of silicon oxide layer and silicon nitride layer.
Beneficial effects of the present invention: the production method of MOS substrate provided by the invention, in the process of production amorphous germanium layer
In, phosphonium ion is carried out to amorphous germanium thin film using phosphorus-containing compound gas by the way of multistep film forming, and after every one-step film forming
Injection finally obtains the amorphous germanium layer of phosphonium ion doping, is formed after channel without being individually doped to channel, is effectively simplified
Processing procedure reduces production cost.MOS substrat structure of the invention, channel region complete phosphonium ion injection when amorphous germanium forms a film,
Without individually carrying out channel dopping process, production is simple, and production cost is low.
Detailed description of the invention
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with of the invention detailed
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
In attached drawing,
Fig. 1 is the schematic diagram of the step 1 of the production method of MOS substrate of the invention；
Fig. 2-Fig. 3 is the schematic diagram of the step 2 of the production method of MOS substrate of the invention；
Fig. 4-Fig. 5 is the schematic diagram of the step 3 of the production method of MOS substrate of the invention；
Fig. 6 is the schematic diagram of the step 4 of the production method of MOS substrate of the invention；
Fig. 7 is the schematic diagram of the step 5 of the production method of MOS substrate of the invention；
Fig. 8 is the schematic diagram of step 6 and the cuing open for MOS board structure of the present invention of the production method of MOS substrate of the invention
Face schematic diagram.
Specific embodiment
Further to illustrate technological means and its effect adopted by the present invention, below in conjunction with preferred implementation of the invention
Example and its attached drawing are described in detail.The embodiments described below are only a part of the embodiment of the present invention, rather than all
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art institute without creative efforts
The every other embodiment obtained, shall fall within the protection scope of the present invention.
Referring to Fig. 1, including the following steps: present invention firstly provides a kind of production method of MOS substrate
Step 1, as shown in Figure 1, provide substrate 1, on the substrate 1 deposit transition zone 2.The substrate 1 can be glass
Glass substrate or plastic supporting base；The transition zone 2 can be silica (SiOx) layer, silicon nitride (SiNx) layer or silicon oxide layer with
The composite layer of silicon nitride layer.In this embodiment, the transition zone 2 is the composite layer of silicon oxide layer and silicon nitride layer.
Step 2, as shown in Fig. 2, deposit an amorphous germanium (a-Si) film 301 on the transition zone 2, as shown in figure 3,
301 surface of amorphous germanium thin film is passed through phosphorus-containing compound gas, the phosphorus-containing compound gas be second phosphine (B2H6) or its
His phosphorus-containing compound；Surface is carried out to the amorphous germanium thin film 301 by chemical vapor deposition (CVD) method using silane and hydrogen
Processing, so that the surface doping phosphonium ion of the amorphous germanium thin film 301.Deposit the process and use of the amorphous germanium thin film 301
The process of amorphous germanium thin film 301 described in phosphorus-containing compound gas treatment can be carried out continuously in the same chamber, can also be divided
It is opened in two chambers and carries out.
Step 3, the operation for repeating step 2 for several times, obtain the amorphous germanium thin film 301 of several layer surface doping phosphonium ions, described
The superposition of amorphous germanium thin film 301 of number layer surface doping phosphonium ion constitutes amorphous germanium layer 3.Specifically, repeating step in the step 3
The number of 2 operations is greater than or equal to primary.As shown in fig. 4-5, in the present embodiment, the step 3 is repeating said steps 2
Operation is primary, that is, finally deposited two layers of amorphous germanium thin film 301 on transition zone 2, finally obtained amorphous germanium layer 3 is by two layers
The amorphous germanium thin film 301 of surface doping phosphonium ion is formed by stacking.
Step 4, as shown in fig. 6, made annealing treatment to the amorphous germanium layer 3, remove the hydrogen that is adulterated in amorphous germanium layer 3 from
Son, while the phosphonium ion for being doped to 301 surface of every layer of amorphous germanium thin film is uniformly diffused into entire amorphous germanium layer 3, it realizes
Phosphonium ion doping to entire amorphous germanium layer 3.
Specifically, room (CVD can be heated using boiler tube, quasi-molecule laser annealing (ELA) equipment or chemical vapor deposition
Heating Chamber) amorphous germanium layer 3 is made annealing treatment.
Step 5, as shown in fig. 7, using twice light shield to the phosphonium ion doping after amorphous germanium layer 3 carry out two secondary ions
Injection, obtain two N-type heavily doped regions 31 positioned at 3 two sides of amorphous germanium layer, positioned at 3 middle part of the amorphous germanium layer phosphorus from
Sub- doped channel regions 33 and two N-type lightly doped districts 32 between described two N-type heavily doped regions 31 and channel region 33.
Since amorphous germanium layer 3 completes the injection of phosphonium ion in film forming, there is no need to carry out ion to channel region 33 again
Dopping process.
Step 6, as shown in figure 8, sequentially forming gate insulating layer 5, grid 6, interlayer insulating film on the amorphous germanium layer 3
7 and source, drain electrode 81,82.The step 6 can be realized using the prior art.
Specifically, the interlayer insulating film 7 can be silicon oxide layer, silicon nitride layer or silicon oxide layer and silicon nitride layer
Composite layer.In this embodiment, the interlayer insulating film 7 is the composite layer of silicon oxide layer and silicon nitride layer.
The production method of above-mentioned MOS substrate, during making amorphous germanium layer, by the way of multistep film forming, and
Phosphonium ion injection is carried out to amorphous germanium thin film using phosphorus-containing compound gas after every one-step film forming, finally obtains the non-of phosphonium ion doping
Brilliant germanium layer forms after channel without being individually doped to channel, is effectively simplified processing procedure, reduces production cost.
Refering to Fig. 8, the present invention also provides a kind of MOS substrat structures, including substrate 1, the transition zone on the substrate 1
2, the amorphous germanium layer 3 on the transition zone 2, the gate insulating layer 5 on the amorphous germanium layer 3, be set to the grid
Grid 6 on insulating layer 5, the interlayer insulating film 7 that the grid 6 is covered on the gate insulating layer 5 and it is set to the layer
Between source electrode 81 on insulating layer 7 and drain electrode 82.The amorphous germanium layer 3 includes corresponding to the source electrode positioned at the two sides of amorphous germanium layer 3
81 with two N-type heavily doped regions 31 of 82 lower section of drain electrode, the phosphorus below the corresponding grid 6 in the middle part of amorphous germanium layer 3 from
Sub- doped channel regions 33 and two N-types between the N-type heavily doped region 31 and phosphonium ion doped channel regions 33 are lightly doped
Area 32.The phosphonium ion doped channel regions 33 are using the phosphonium ion doped channel regions 33 in the production method of above-mentioned MOS substrate
Production method is prepared.The transition zone 2 or the interlayer insulating film 7 can be silicon oxide layer, silicon nitride layer or silica
Transition zone 2 described in composite layer of the layer with silicon nitride layer, interlayer insulating film 7 are the composite layer of silicon oxide layer and silicon nitride layer.Institute
It states and corresponds to the tops of described two N-type heavily doped regions 31 on gate insulating layer 5 and interlayer insulating film 7 and be respectively equipped with via hole 80, institute
Source electrode 81 is stated to be in contact via the via hole 80 with the N-type heavily doped region 31 respectively with drain electrode 82.
Above-mentioned MOS substrat structure, channel region completes phosphonium ion injection when amorphous germanium forms a film, without individually carrying out channel
Dopping process, production is simple, and production cost is low.
In conclusion the production method of MOS substrate provided by the invention, during making amorphous germanium layer, using more
The mode of one-step film forming, and phosphonium ion injection is carried out to amorphous germanium thin film using phosphorus-containing compound gas after every one-step film forming, finally
The amorphous germanium layer of phosphonium ion doping is obtained, is formed after channel without being individually doped to channel, is effectively simplified processing procedure, reduces
Production cost.MOS substrat structure of the invention, channel region completes phosphonium ion injection when amorphous germanium forms a film, without independent
Channel dopping process is carried out, production is simple, and production cost is low.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding changes and modifications are made in design, and all these change and modification all should belong to the appended right of the present invention
It is required that protection scope.
Claims (10)
1. a kind of production method of MOS substrate, which comprises the steps of:
Step 1 provides substrate (1), deposits transition zone (2) on the substrate (1)；
Step 2 deposits an amorphous germanium thin film (301) on the transition zone (2), and on the amorphous germanium thin film (301) surface
It is passed through phosphorus-containing compound gas, the amorphous germanium thin film (301) is surface-treated using the method for chemical vapor deposition, is made
Obtain the surface doping phosphonium ion of the amorphous germanium thin film (301)；
Step 3, the operation for repeating step 2 for several times, obtain the amorphous germanium thin film (301) of several layer surface doping phosphonium ions, the number
Amorphous germanium thin film (301) superposition that layer surface adulterates phosphonium ion constitutes amorphous germanium layer (3)；
Step 4 makes annealing treatment the amorphous germanium layer (3), and the hydrogen ion adulterated in removal amorphous germanium layer (3) makes simultaneously
The phosphonium ion that every layer of amorphous germanium thin film (301) surface must be doped to uniformly is diffused into entire amorphous germanium layer (3), is realized to entire
The phosphonium ion of amorphous germanium layer (3) adulterates；
Step 5 carries out ion implanting twice to the amorphous germanium layer (3) after phosphonium ion doping using twice light shield, obtains in place
It is mixed in two N-type heavily doped regions (31) of the amorphous germanium layer (3) two sides, the phosphonium ion in the middle part of the amorphous germanium layer (3)
Miscellaneous channel region (33) and two N-types between described two N-type heavily doped regions (31) and phosphonium ion doped channel regions (33)
Lightly doped district (32)；
Step 6, sequentially formed on the amorphous germanium layer (3) gate insulating layer (5), grid (6), interlayer insulating film (7) and
Source, drain electrode (81,82).
2. the production method of MOS substrate as described in claim 1, which is characterized in that the substrate (1) is glass substrate or modeling
Expect substrate.
3. the production method of MOS substrate as claimed in claim 1 or 2, which is characterized in that the transition zone (2) is silica
The composite layer of layer, silicon nitride layer or silicon oxide layer and silicon nitride layer.
4. the production method of MOS substrate as described in claim 1, which is characterized in that pass through chemical gas using silane and hydrogen
Amorphous germanium thin film described in phase deposition method (301).
5. the production method of MOS substrate as described in claim 1, which is characterized in that the phosphorus-containing compound gas is second phosphorus
Alkane.
6. the production method of MOS substrate as described in claim 1, which is characterized in that repeat step 2 operation in the step 3
Number be greater than or equal to it is primary.
7. the production method of MOS substrate as described in claim 1, which is characterized in that the step 5 uses boiler tube, quasi-molecule
Laser annealing apparatus or chemical vapor deposition heating room make annealing treatment the amorphous germanium layer (3).
8. the production method of MOS substrate as described in claim 1, which is characterized in that the interlayer insulating film (7) is silica
The composite layer of layer, silicon nitride layer or silicon oxide layer and silicon nitride layer.
9. a kind of MOS substrat structure, the production method of MOS substrate described in claim 1~8 any one are made,
It is characterized in that, the MOS substrat structure includes the substrate (1), the transition zone (2) being set on the substrate (1), is set to
The amorphous germanium layer (3) on the transition zone (2), is set the gate insulating layer (5) on the amorphous germanium layer (3)
In on the gate insulating layer (5) the grid (6), be set on the gate insulating layer (5) and cover the institute of the grid (6)
Interlayer insulating film (7) is stated to address the source electrode (81) on the interlayer insulating film (7) and the drain electrode (82)；
The amorphous germanium layer (3) includes corresponding to the source electrode (81) and the drain electrode positioned at the two sides of the amorphous germanium layer (3)
(82) two N-type heavily doped regions (31) below, the middle part for being located at the amorphous germanium layer (3) correspond to below the grid (6)
The phosphonium ion doped channel regions (33) and it is located at described two N-type heavily doped regions (31) and the phosphonium ion doped channel regions
(33) two N-type lightly doped districts (32) between；
The top point of described two N-type heavily doped regions (31) is corresponded on the gate insulating layer (5) and the interlayer insulating film (7)
Not She You via hole (80), the source electrode (81) and the drain electrode (82) are respectively via the via hole (80) and the N-type heavy doping
Area (31) is in contact.
10. MOS substrat structure as claimed in claim 9, which is characterized in that the transition zone (2) is silicon oxide layer, silicon nitride
The composite layer of layer or silicon oxide layer and silicon nitride layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910172156.0A CN109860029A (en) | 2019-03-07 | 2019-03-07 | A kind of production method and MOS substrat structure of MOS substrate |
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| CN201910172156.0A CN109860029A (en) | 2019-03-07 | 2019-03-07 | A kind of production method and MOS substrat structure of MOS substrate |
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| CN109860029A true CN109860029A (en) | 2019-06-07 |
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| CN201910172156.0A Withdrawn CN109860029A (en) | 2019-03-07 | 2019-03-07 | A kind of production method and MOS substrat structure of MOS substrate |
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Application publication date: 20190607 |