CN109856425A - A kind of monolithic integrated tri-axial acceleration sensor and its manufacture craft - Google Patents
A kind of monolithic integrated tri-axial acceleration sensor and its manufacture craft Download PDFInfo
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Abstract
The invention discloses a kind of monolithic integrated tri-axial acceleration sensor and its manufacture crafts, wherein, using semiconductor packaging method, using 4 double L-shaped beams, two mass blocks, intermediate twin beams as elastic element, described two mass blocks are by the acceleration information (a of impressionx、ay、az) deformation of elastic components is converted to, cause the 3 wheatstone bridge configurations output electric signal being made of the varistor of elastic element root 12 to change, can realize three directional acceleration (a respectivelyx、ay、az) detection；Also, by 4 double L-shaped beams of optimization and two mass blocks, intermediate twin beams size, preferably rear three detection circuits, which detect corresponding acceleration, has preferable consistency.
Description
Technical field
The present invention relates to sensor technical field more particularly to acceleration transducers, particularly, are related to a kind of single-chip integration
3-axis acceleration sensor and its manufacture craft.
Background technique
With the rapid development of science and technology, sensor technology is by attention, especially in modern industry, automotive electronics, boat
It is used widely in the fields such as empty space flight, deep-sea detecting.
In the prior art, the sensor for detecting 3-axis acceleration includes capacitance-type triaxial acceleration transducer, pressure
Electric-type 3-axis acceleration sensor and pressure resistance type 3-axis acceleration sensor etc..To realize that three, space directional acceleration is surveyed simultaneously
Amount carries out 3-axis acceleration detection by the corresponding sensing unit of assembled package.
But in the 3-axis acceleration sensor disclosed in the prior art, because all directions sensing unit is in the presence of certain poor
Different, in three, space directional acceleration simultaneously measurement process, there are sensitivity, range, accuracy characteristic are different for sensor
Cause problem.Especially, in the sensor of the prior art, x, the sensitivity in y-axis direction are too low, and the sensitive of z-axis direction is spent
It is high.
Summary of the invention
To solve the above-mentioned problems, present inventor has performed sharp studies, by using semiconductor packaging
(MEMS) method, using twin beams among 4 double L-shaped beams, two mass blocks as elastic element, described two mass block (m1、m2)
By the acceleration information (a of impressionx、ay、az) deformation of elastic components is converted to, cause described pressure-sensitive by elastic element root 12
3 wheatstone bridge configurations that resistance is constituted export electric signal (Vxout1、Vxout2、Vyout1、Vyout2、Vzout1、Vzout2) become
Change, can realize three directional acceleration (a respectivelyx、ay、az) detection；By double among 4 double L-shaped beams of optimization and two mass blocks
Beam size, preferably rear three detection circuits, which detect corresponding acceleration, has preferable consistency, completes of the invention.
One aspect of the present invention provides a kind of monolithic integrated tri-axial acceleration sensor, is embodied in following several respects:
(1) a kind of monolithic integrated tri-axial acceleration sensor, wherein the sensor is using SOI piece as carrier, the SOI
Piece includes device silicon 1 and substrate silicon 2, wherein is etched with hanging structure, the hanging structure in the center of the sensor
Including the first mass block m1, the second mass block m2, the first intermediate beam ZL1, the second intermediate beam ZL2 and four L-type beams, wherein right
Four L-type beams are split along longitudinal direction, form eight L girders, respectively the first L girder L1, the 2nd L girder L2, the 3rd L
Girder L3, the 4th L girder L4, the 5th L girder L5, the 6th L girder L6, the 7th L girder L7 and the 8th L girder L8.
(2) monolithic integrated tri-axial acceleration sensor according to above-mentioned (1), wherein the first mass block m1 and
Second mass block m2 is located at the center of the hanging structure, it is preferable that the first mass block m1 and the second mass block m2 are along biography
The x direction center line or y direction center line of sensor are symmetrical arranged.
(3) monolithic integrated tri-axial acceleration sensor according to above-mentioned (1) or (2), wherein first intermediate beam
ZL1 and the second intermediate beam ZL2 are set between the first mass block m1 and the second mass block m2, for connecting the first mass block
M1 and the second mass block m2；
Preferably, the first intermediate beam ZL1 and the second intermediate beam ZL2 are along the y direction center line of sensor or the direction x
Heart line is symmetrical arranged, and vertical with the first mass block m1 and the second mass block m2；
It is highly preferred that the thickness of the first intermediate beam ZL1 and the second intermediate beam ZL2 are equal to the thickness of device silicon.
(4) monolithic integrated tri-axial acceleration sensor according to one of above-mentioned (1) to (3), wherein
The first mass block m1 is small backwards to the one side of the first intermediate beam ZL1 and the second intermediate beam ZL2 and the 2nd L
Beam L2, the 7th L girder L7, the 4th L girder L4 and the 8th L girder L8 connection；And/or
The second mass block m2 is small backwards to the one side of the first intermediate beam ZL1 and the second intermediate beam ZL2 and the first L
Beam L1, the 5th L girder L5, the 3rd L girder L3 and the 6th L girder L6 connection.
(5) monolithic integrated tri-axial acceleration sensor according to one of above-mentioned (1) to (4), wherein described first
L girder L1, the 2nd L girder L2, the 3rd L girder L3 and the 4th L girder L4 root be respectively arranged with x parallel to each other to first
Varistor Rx1, x is to the second varistor Rx2, x is to third varistor Rx3With x to the 4th varistor Rx4；
Preferably, the x is to the first varistor Rx1One end and x to the second varistor Rx2One end be connected, connection
Place forms the first output voltage of x-axis Vxout1；The x is to third varistor Rx3One end and x to the 4th varistor Rx4One
End is connected, and junction forms the second output voltage of x-axis Vxout2；
It is highly preferred that the x is to the first varistor Rx1The other end and x to the 4th varistor Rx4The other end it is total
With connection power supply VDD, the x is to the second varistor Rx2The other end and x to third varistor Rx3The other end ground connection.
(6) monolithic integrated tri-axial acceleration sensor according to one of above-mentioned (1) to (5), wherein the described 5th
L girder L5, the 6th L girder L6, the 7th L girder L7 and the 8th L girder L8 to be provided with y parallel to each other pressure-sensitive to first for root
Resistance Ry1, y is to the second varistor Ry2, y is to third varistor Ry3With y to the 4th varistor Ry4；
Preferably, y is to the first varistor Ry1One end and y to the second varistor Ry2One end be connected, junction shape
At the first output voltage of y-axis Vyout1；Y is to third varistor Ry3One end and y to the 4th varistor Ry4One end be connected,
Junction forms the second output voltage of y-axis Vyout2；
It is highly preferred that y is to the first varistor Ry1The other end and y to the 4th varistor Ry4The other end connect jointly
Meet power supply VDD, y is to the second varistor Ry2The other end and y to third varistor Ry3The other end ground connection.
(7) monolithic integrated tri-axial acceleration sensor according to one of above-mentioned (1) to (6), wherein
The first intermediate beam ZL1 is respectively arranged with phase in the root connecting with the first mass block m1 and the second mass block m2
Mutually vertical z is to the first varistor Rz1With z to the second varistor Rz2；And/or
The second intermediate beam ZL2 is respectively arranged with phase in the root connecting with the first mass block m1 and the second mass block m2
Mutually vertical z is to the 4th varistor Rz4With z to third varistor Rz3。
(8) monolithic integrated tri-axial acceleration sensor according to one of above-mentioned (1) to (7), wherein the z is to
One varistor Rz1One end and z to the second varistor Rz2One end be connected, junction formed the first output voltage of z-axis
Vzout1；The z is to third varistor Rz3One end and z to the 4th varistor Rz4One end be connected, junction formed z-axis
Second output voltage Vzout2；
Preferably, the z is to the first varistor Rz1The other end and z to the 4th varistor Rz4The other end it is common
Connect power supply VDD, the z is to the second varistor Rz2The other end and z to third varistor Rz3The other end be grounded GND.
(9) manufacture craft of monolithic integrated tri-axial acceleration sensor described in a kind of one of above-mentioned (1) to (8), wherein institute
Technique is stated to carry out as follows:
Step 1, cleaning SOI piece (as shown in Figure 4 A) carry out once oxidation in 1 upper surface of device silicon, grow SiO2Layer is made
For insulating medium layer；
Step 2, cleaning SOI piece, using plasma chemical vapor deposition (PECVD) original position doping process is in nc-Si:H
(p-) nc-Si:H (p is deposited on window-) film, a photoetching is carried out, etching forms nc-Si:H (p-) thin film piezoresitive；
Step 3, cleaning SOI piece, secondary photoetching carry out ion implanting in 1 upper surface of SOI piece device silicon, carry out p+Type is mixed
Miscellaneous, being preferably injected dosage is 5E14cm-2To 5E15cm-2；
Step 4, cleaning SOI piece, the high temperature anneal form 12 varistor (Rx1、Rx2、Rx3、Rx4、Ry1、Ry2、Ry3、
Ry4、Rz1、Rz2、Rz3、Rz4) (as shown in Figure 4 B)；
Step 5, cleaning SOI piece, secondary oxidation, chemical vapour deposition technique grow SiO in 1 upper surface of SOI piece device silicon2
Layer, as insulating medium layer；
Step 6, third photo etching, BOE corrode SiO2Layer forms contact hole；
Step 7, cleaning SOI piece form metal electrode layer in 1 upper surface Grown by Magnetron Sputtering metal Al layer of device silicon；
Step 8, four mask corrode metal Al layer, form metal electrode；
Step 9, cleaning silicon chip, in 1 upper surface chemical vapor deposition growth SiO of device silicon2Layer, preferred thickness 3000~
5000nm, as passivation layer；
Step 10, five photoetching, corrosion and passivation layer form pressure welding point；
Step 11, cleaning silicon chip carry out Alloying Treatment and form Ohmic contact (as shown in Figure 4 C)；
Step 12, six photoetching, BOE corrosion 2 bottom oxidization layer of substrate silicon, deep etching technology (ICP) etched substrate silicon,
It is etched at silicon dioxide layer 3；
Step 13, seven photoetching, 1 frontside oxide layer of BOE corrosion device silicon, deep etching technology (ICP) etched features silicon
1, it is etched at silicon dioxide layer 3, discharges L trabecularism (L1, L2, L3, L4, L5, L6, L7, L8) (as shown in Figure 4 D)；
Step 14, bonding technology, SOI piece are bonded with the sheet glass with overcurrent protection structure, realize overload protection
Function.
(10) manufacture craft according to above-mentioned (9), wherein
The device silicon 1 of the SOI piece is<100>crystal orientation monocrystalline silicon, and conduction type is N-shaped, it is preferable that the SOI piece
The resistivity of device silicon 1 is 0.01-10 Ω cm, preferably 0.1-1 Ω cm；And/or
In step 3, the nc-Si:H (p of deposition-) film with a thickness of 50~120nm, preferably 60~100nm；With/
Or
In steps of 5, the high temperature anneal carries out as follows: at 600-1200 DEG C vacuum environment processing 20~
50min, it is preferable that vacuum environment handles 30~40min at 800-1000 DEG C；And/or
In step 12, the Alloying Treatment carries out as follows: 10~50min is handled at 350~500 DEG C, it is preferable that
20~40min is handled at 400~450 DEG C, it is highly preferred that handling 30min at 420 DEG C.
Detailed description of the invention
Fig. 1 shows the schematic top plan view of monolithic integrated tri-axial sensor of the present invention；
Fig. 2 shows the elevational schematic views of monolithic integrated tri-axial sensor of the present invention；
Fig. 3 A~Fig. 3 B shows the equivalent circuit diagram of monolithic integrated tri-axial sensor of the present invention, wherein Fig. 3 A is nothing
When acceleration, Fig. 3 B is when having acceleration；
Fig. 4 A~Fig. 4 D shows the process schematic representation of manufacture craft of the present invention；
Fig. 5 shows the schematic top plan view of the monolithic integrated tri-axial acceleration sensor of comparative experiments example use；
Fig. 6 shows the elevational schematic view of the monolithic integrated tri-axial acceleration sensor of comparative experiments example use.
Description of symbols
1- device silicon；2- substrate silicon；3- silicon dioxide layer；The first mass block of m1-；The second mass block of m2-；In ZL1- first
Between beam；The second intermediate beam of ZL2-；The first L girder of L1-；The 2nd L girder of L2-；The 3rd L girder of L3-；The 4th L girder of L4-；L5-
Five L girders；The 6th L girder of L6-；The 7th L girder of L7-；The 8th L girder of L8-；Rx1- x is to the first varistor；Rx2- x is to second
Varistor；Rx3- x is to third varistor；Rx4- x is to the 4th varistor；Vxout1The first output voltage of x-axis；Vxout2X-axis
Second output voltage；Ry1- y is to the first varistor；Ry2- y is to the second varistor；Ry3- y is to third varistor；Ry4- y to
4th varistor；Vyout1The first output voltage of y-axis；Vyout2The second output voltage of y-axis；Rz1- z is to the first varistor；
Rz2- z is to the second varistor；Rz3- z is to third varistor；Rz4- z is to the 4th varistor；Vzout1Z-axis first exports electricity
Pressure；Vzout2The second output voltage of z-axis；VDDPower supply；GND- ground connection.
Specific embodiment
Present invention will now be described in detail, and the features and advantages of the invention will become more with these explanations
It is clear, clear.
One aspect of the present invention provides a kind of monolithic integrated tri-axial acceleration sensor, as shown in Fig. 1~2, the sensing
For device using SOI piece as carrier, the SOI piece includes device silicon 1 and substrate silicon 2, wherein is etched in the center of the sensor
There is hanging structure, the hanging structure includes the first mass block m1, the second mass block m2, the first intermediate beam ZL1, the second intermediate beam
ZL2 and four L-type beam, wherein four L-type beams are split along longitudinal direction, form eight L girders, respectively the first L is small
Beam L1, the 2nd L girder L2, the 3rd L girder L3, the 4th L girder L4, the 5th L girder L5, the 6th L girder L6, the 7th L girder L7
With the 8th L girder L8.
Wherein, four L-type beams are split, forms eight L girders, x-axis direction and y-axis direction can be significantly improved
Sensitivity makes the sensitivity of x-axis direction, y-axis direction almost close to the sensitivity in z-axis direction, promotes the sensitivity of x, y, z all directions
Consistency.
A kind of preferred embodiment according to the present invention, the device silicon 1 with a thickness of 20-50 μm, the substrate silicon 2
With a thickness of 420~550 μm.
In further preferred embodiment, the device silicon 1 with a thickness of 30-40 μm, the thickness of the substrate silicon 2
It is 420~550 μm, such as 450~525 μm.
A kind of preferred embodiment according to the present invention, as shown in Fig. 1~2, the first mass block m1 and the second mass
Block m2 is located at the center of the hanging structure.
In further preferred embodiment, as shown in Fig. 1~2, the first mass block m1 and the second mass block m2
X direction center line or y direction center line along sensor are symmetrical arranged.
In embodiment still more preferably, the thickness of the first mass block m1 and the second mass block m2 are equal to
The maximum gauge of the sensor.
A kind of preferred embodiment according to the present invention, as shown in Fig. 1~2, among the first intermediate beam ZL1 and second
Beam ZL2 is set between the first mass block m1 and the second mass block m2, for connecting the first mass block m1 and the second mass
Block m2.
In further preferred embodiment, as shown in Fig. 1~2, the first intermediate beam ZL1 and the second intermediate beam
ZL2 along sensor y direction center line or x direction center line be symmetrical arranged, and with the first mass block m1 and the second mass block
M2 is vertical.
In embodiment still more preferably, the thickness of the first intermediate beam ZL1 and the second intermediate beam ZL2 are equal to
The thickness of device silicon.
In this way, the first intermediate beam ZL1 and the second intermediate beam ZL2 is arranged in the device silicon as SOI piece.
A kind of preferred embodiment according to the present invention, as shown in Fig. 1~2, the first mass block m1 is in first
Between the one side of beam ZL1 and the second intermediate beam ZL2 and the 2nd L girder L2, the 7th L girder L7, the 4th L girder L4 and the 8th
The L8 connection of L girder.
In further preferred embodiment, as shown in Fig. 1~2, the second mass block m2 is backwards to the first intermediate beam
The one side of ZL1 and the second intermediate beam ZL2 and the first L girder L1, the 5th L girder L5, the 3rd L girder L3 and the 6th L are small
Beam L6 connection.
In this way, forming the hanging structure.
A kind of preferred embodiment according to the present invention, as shown in Figure 1, the first L girder L1, the 2nd L girder L2,
The root of 3rd L girder L3 and the 4th L girder L4 are respectively arranged with x parallel to each other to the first varistor Rx1, x to second pressure
Quick resistance Rx2, x is to third varistor Rx3With x to the 4th varistor Rx4。
In further preferred embodiment, as shown in Fig. 1 and Fig. 3 A~3B, the x is to the first varistor Rx1's
One end and x are to the second varistor Rx2One end be connected, junction formed the first output voltage of x-axis Vxout1；The x is to third
Varistor Rx3One end and x to the 4th varistor Rx4One end be connected, junction formed the second output voltage of x-axis Vxout2。
In embodiment still more preferably, as shown in Fig. 1 and Fig. 3 A~3B, the x is to the first varistor Rx1
The other end and x to the 4th varistor Rx4The other end connect power supply V jointlyDD, the x is to the second varistor Rx2It is another
One end and x are to third varistor Rx3The other end ground connection.
In this way, four pressure-sensitive electricity of the first L girder L1, the 2nd L girder L2, the 3rd L girder L3 and the 4th root L girder L4
Resistance forms Wheatstone bridge, for detecting the acceleration in the direction x.
A kind of preferred embodiment according to the present invention, as shown in Figure 1, the 5th L girder L5, the 6th L girder L6,
The root of 7th L girder L7 and the 8th L girder L8 are provided with y parallel to each other to the first varistor Ry1, y is to the second pressure-sensitive electricity
Hinder Ry2, y is to third varistor Ry3With y to the 4th varistor Ry4。
In further preferred embodiment, as shown in Fig. 1 and Fig. 3 A~3B, y is to the first varistor Ry1One end
With y to the second varistor Ry2One end be connected, junction formed the first output voltage of y-axis Vyout1；Y is to third varistor
Ry3One end and y to the 4th varistor Ry4One end be connected, junction formed the second output voltage of y-axis Vyout2。
In embodiment still more preferably, as shown in Fig. 1 and Fig. 3 A~3B, y is to the first varistor Ry1It is another
One end and y are to the 4th varistor Ry4The other end connect power supply V jointlyDD, y is to the second varistor Ry2The other end and y to
Third varistor Ry3The other end ground connection.
In this way, four pressure-sensitive electricity of the 5th L girder L5, the 6th L girder L6, the 7th L girder L7 and the 8th root L girder L8
Resistance forms Wheatstone bridge, for detecting the acceleration in the direction y.
A kind of preferred embodiment according to the present invention, as shown in Figure 1, the first intermediate beam ZL1 with the first mass
The root of block m1 and the second mass block m2 connection is respectively arranged with orthogonal z to the first varistor Rz1It is pressed with z to second
Quick resistance Rz2。
In further preferred embodiment, as shown in Figure 1, the second intermediate beam ZL2 with the first mass block m1
Orthogonal z is respectively arranged with to the 4th varistor R with the root connected the second mass block m2z4With z to the pressure-sensitive electricity of third
Hinder Rz3。
In embodiment still more preferably, as shown in Figure 1, the z is to the first varistor Rz1With the z to
Four varistor Rz4It is vertically arranged, the z is to the second varistor Rz2With the z to third varistor Rz3It is vertically arranged.
Wherein, (z is to the first pressure-sensitive electricity for four varistors being arranged on the first intermediate beam ZL1 and the second intermediate beam ZL2
Hinder Rz1, z is to the second varistor Rz2, z is to third varistor Rz3, z is to the 4th varistor Rz4) for detecting z-axis direction
Acceleration.
A kind of preferred embodiment according to the present invention, as shown in Fig. 1 and Fig. 3 A~3B, the z is to the first varistor
Rz1One end and z to the second varistor Rz2One end be connected, junction formed the first output voltage of z-axis Vzout1；The z to
Third varistor Rz3One end and z to the 4th varistor Rz4One end be connected, junction formed the second output voltage of z-axis
Vzout2。
In further preferred embodiment, as shown in Fig. 1 and Fig. 3 A~3B, the z is to the first varistor Rz1's
The other end and z are to the 4th varistor Rz4The other end connect power supply V jointlyDD, the z is to the second varistor Rz2It is another
End and z are to third varistor Rz3The other end be grounded GND.
In this way, four varistors being set on the first intermediate beam ZL1 and the second intermediate beam ZL2 form favour stone electricity
Bridge, for detecting the acceleration in the direction z.
A kind of preferred embodiment according to the present invention, 12 varistors of setting are Nano thin film resistance nc-
Si:H(p-)。
Wherein, 12 varistors include x to the first varistor Rx1, x is to the second varistor Rx2, x is to third
Varistor Rx3, x is to the 4th varistor Rx4, y is to the first varistor Ry1, y is to the second varistor Ry2, y it is pressure-sensitive to third
Resistance Ry3, y is to the 4th varistor Ry4, z is to the first varistor Rz1, z is to the second varistor Rz2, z is to third varistor
Rz3With z to the 4th varistor Rz4。
In the present invention, it is preferred to using Nano thin film varistor, wherein nano-silicon (nc-Si:H) film is
One kind is by a large amount of silicon fine grain (several nanosizeds) and surrounds a kind of novel nano electricity that its crystal grain boundary constitutes
Sub- material.Nano-silicon (nc-Si:H) film has high piezoresistance coefficient, and piezoresistance coefficient is higher than single crystal silicon material and polycrystalline
Silicon, about the 4~6 of monocrystalline silicon times, can be realized highly sensitive pressure-sensitive test.
The length of a kind of preferred embodiment according to the present invention, the length of the first mass block m1 or the second mass block m2 with
The ratio of the side length of the SOI piece is (0.5~0.65): 1.
In further preferred embodiment, the first mass block m1 it is wide or the second mass block m2 it is wide with it is described
The ratio of the side length of SOI piece is (0.2~0.3): 1.
Wherein, in the present invention, it is preferred to which the lateral section of the SOI piece is square.
A kind of preferred embodiment according to the present invention, the length of the first intermediate beam ZL1 or the length of the second intermediate beam ZL2
Ratio with the side length of the SOI piece is (0.05~0.1): 1.
In further preferred embodiment, wide or the second intermediate beam ZL2 the width of the first intermediate beam ZL1 and institute
The ratio for stating the side length of SOI piece is (0.05~0.2): 1.
In the present invention, by regulating and controlling the size of mass block and intermediate beam relative to sensor again, z-axis is reduced
The sensitivity in direction.Along with 4 L beams are split into 8 girders before, in this way, improving L beam under same acceleration effect
Root Stress distribution, effectively increases the sensitivity of x-axis and y-axis, in this way, reducing z-axis while improving x, y-axis sensitivity
Sensitivity, so that the sensitivity of tri- axis direction of x, y and z reaches unanimity.
A kind of preferred embodiment according to the present invention, the sensor further include the glass with medium altitude groove structure
Piece.
In further preferred embodiment, the sheet glass is bonded with the substrate silicon 2 of SOI piece.
In embodiment still more preferably, the sheet glass is Pyrex piece, with a thickness of (0.5~1) μm.
Thinned complex process is carried out to mass block in this way, avoiding, but is used and be bonded with the reeded sheet glass of tool,
First mass block and the second mass block are moved freely in groove.
Second aspect of the present invention provides monolithic integrated tri-axial acceleration sensor described in a kind of first aspect present invention
Manufacture craft, the technique carry out as follows:
Step 1, cleaning SOI piece (as shown in Figure 4 A) carry out once oxidation in 1 upper surface of device silicon, grow SiO2Layer is made
For insulating medium layer；
Step 2, cleaning SOI piece, using plasma chemical vapor deposition (PECVD) original position doping process is in nc-Si:H
(p-) nc-Si:H (p is deposited on window-) film, a photoetching is carried out, etching forms nc-Si:H (p-) thin film piezoresitive；
Step 3, cleaning SOI piece, secondary photoetching carry out ion implanting in 1 upper surface of SOI piece device silicon, carry out p+Type is mixed
Miscellaneous, being preferably injected dosage is 5E14cm-2To 5E15cm-2；
Step 4, cleaning SOI piece, the high temperature anneal form 12 varistor (Rx1、Rx2、Rx3、Rx4、Ry1、Ry2、Ry3、
Ry4、Rz1、Rz2、Rz3、Rz4) (as shown in Figure 4 B)；
Step 5, cleaning SOI piece, secondary oxidation, chemical vapour deposition technique grow SiO in 1 upper surface of SOI piece device silicon2
Layer, as insulating medium layer；
Step 6, third photo etching, BOE corrode SiO2Layer forms contact hole；
Step 7, cleaning SOI piece form metal electrode layer in 1 upper surface Grown by Magnetron Sputtering metal Al layer of device silicon；
Step 8, four mask corrode metal Al layer, form metal electrode；
Step 9, cleaning silicon chip, in 1 upper surface chemical vapor deposition growth SiO of device silicon2Layer, preferred thickness 3000~
5000nm, as passivation layer；
Step 10, five photoetching, corrosion and passivation layer are formed pressure welding point (pad)；
Step 11, cleaning silicon chip carry out Alloying Treatment and form Ohmic contact (as shown in Figure 4 C)；
Step 12, six photoetching, BOE corrosion 2 bottom oxidization layer of substrate silicon, deep etching technology (ICP) etched substrate silicon,
It is etched at silicon dioxide layer 3；
Step 13, seven photoetching, 1 frontside oxide layer of BOE corrosion device silicon, deep etching technology (ICP) etched features silicon
1, it is etched at silicon dioxide layer 3, discharges L trabecularism (L1, L2, L3, L4, L5, L6, L7, L8) (as shown in Figure 4 D)；
Step 14, bonding technology, SOI piece are bonded with the sheet glass with overcurrent protection structure, realize overload protection
Function.
A kind of preferred embodiment according to the present invention, the device silicon 1 of the SOI piece are to lead for<100>crystal orientation monocrystalline silicon
Electric type is N-shaped.
In further preferred embodiment, the resistivity of the device silicon 1 of the SOI piece is 0.01-10 Ω cm, excellent
It is selected as 0.1-1 Ω cm.
In embodiment still more preferably, the device silicon 1 of the SOI piece with a thickness of 20-50 μm, such as 30-
40μm。
A kind of preferred embodiment according to the present invention, the substrate silicon 2 of the SOI piece with a thickness of 420~550 μm.
In further preferred embodiment, the substrate silicon 2 of the SOI piece with a thickness of 450~525 μm.
In embodiment still more preferably, the substrate silicon 2 of the SOI piece with a thickness of 475~500 μm.
A kind of preferred embodiment according to the present invention grows SiO in step 1 and step 62Layer with a thickness of 200-
600nm。
In further preferred embodiment, in step 1 and step 6, SiO is grown2Layer with a thickness of 300-
500nm。
A kind of preferred embodiment according to the present invention, in step 3, the nc-Si:H (p of deposition-) film with a thickness of
50~120nm.
In further preferred embodiment, in step 3, the nc-Si:H (p of deposition-) film with a thickness of 60~
100nm。
A kind of preferred embodiment according to the present invention, in step 8, the metal Al layer of growth with a thickness of 500~
1000nm。
In further preferred embodiment, in step 8, the metal Al layer of growth with a thickness of 600~800nm.
A kind of preferred embodiment according to the present invention, in steps of 5, the high temperature anneal carry out as follows: in
Vacuum environment handles 20~50min at 600-1200 DEG C.
In further preferred embodiment, in steps of 5, the high temperature anneal carries out as follows: in 800-
Vacuum environment handles 30~40min at 1000 DEG C.
A kind of preferred embodiment according to the present invention, in step 12, the Alloying Treatment carry out as follows: in 350
10~50min is handled at~500 DEG C.
In further preferred embodiment, in step 12, the Alloying Treatment carries out as follows: in 400~450
20~40min is handled at DEG C.
In embodiment still more preferably, in step 12, the Alloying Treatment carries out as follows: in 420 DEG C
Lower processing 30min.
A kind of preferred embodiment according to the present invention, the sheet glass are hollow groove structure.
After in this way, treated sheet glass and step 1~13 with medium altitude groove structure, SOI piece is bonded, so that first
Mass block and the second mass block can move.In this way, avoiding the processing to SOI piece, therefore, it is bonded using simple sheet glass
Avoid complicated SOI piece processing.
In further preferred embodiment, the sheet glass is bonded with the substrate silicon 2 of SOI piece.
In embodiment still more preferably, the sheet glass is Pyrex piece, with a thickness of (0.5~1) μm.
Third aspect present invention provides a kind of single-chip integration that the manufacture craft described according to a second aspect of the present invention obtains
3-axis acceleration sensor.
Possessed by of the invention the utility model has the advantages that
(1) monolithic integrated tri-axial acceleration sensor of the present invention is by 4 double L-shaped beams, 12 varistors, mass blocks
Intermediate twin beams and two mass blocks carry out effectively combining simultaneously single-chip integrated, respectively constitute three pairs of test circuits, realize three axis
Acceleration (ax、ay、az) detection；
(2) monolithic integrated tri-axial acceleration sensor of the present invention splits 4 L-type beams, and it is small to form eight L
Beam promotes the sensitivity consistency in tri- direction x, y and z in this way, significantly improving the sensitivity of x-axis direction and y-axis direction；
(3) monolithic integrated tri-axial acceleration sensor structure of the present invention is simple, realizes the miniaturization sum aggregate of chip
Cheng Hua；
(4) manufacture craft of the present invention is simple, it is easy to accomplish, it is suitble to large-scale industrial application.
Experimental example
Using standard vibration machine (Dongling ESS-050), proframmable linear DC power supply (RIGOL DP832A), number
The instruments such as word multimeter (Agilent 34410A) and oscillograph (Agilent DSO-X4145A) build acceleration transducer spy
Property test macro, to monolithic integrated tri-axial acceleration sensor of the present invention (such as Fig. 1) carry out characteristic test, analyze monolithic collection
At 3-axis acceleration sensor sensory characteristic etc..
As supply voltage 5.0V, the x-axis direction acceleration transducer sensitivity of sensor of the present invention is 0.85mV/
G, y-axis directional acceleration transducer sensitivity are 0.84mV/g, and z axis direction acceleration transducer sensitivity is 0.82mV/g.
It is found that the detection to 3-axis acceleration may be implemented in sensor of the present invention, and obtained x, y and z tri-
The sensitivity in direction is close to unanimously.
Comparative experiments example
Using standard vibration machine (Dongling ESS-050), proframmable linear DC power supply (RIGOL DP832A), number
The instruments such as word multimeter (Agilent 34410A) and oscillograph (Agilent DSO-X4145A) build acceleration transducer spy
Property test macro, to monolithic integrated tri-axial acceleration sensor shown in Fig. 5~6 carry out characteristic test, analyze monolithic integrated tri-axial
Acceleration transducer sensory characteristic etc..Wherein, in Fig. 5~6,4 L-type beams are not split.
As supply voltage 5.0V, the x-axis direction acceleration transducer sensitivity of sensor shown in Fig. 5~6 is 0.60mV/
G, y-axis directional acceleration transducer sensitivity are 0.74mV/g, and z axis direction acceleration transducer sensitivity is 2.60mV/g.
It is found that the detection to 3-axis acceleration may be implemented in sensor shown in Fig. 5~6, tri- sides x, y and the z singly obtained
To sensitivity it is unanimously excessively poor.
It is described the invention in detail above in conjunction with detailed description and exemplary example, but these explanations are simultaneously
It is not considered as limiting the invention.It will be appreciated by those skilled in the art that without departing from the spirit and scope of the invention,
Can be with various equivalent substitutions, modifications or improvements are made to the technical scheme of the invention and its embodiments, these each fall within the present invention
In the range of.Scope of protection of the present invention is subject to the appended claims.
Claims (10)
1. a kind of monolithic integrated tri-axial acceleration sensor, which is characterized in that the sensor is using SOI piece as carrier, the SOI
Piece includes device silicon (1) and substrate silicon (2), wherein is etched with hanging structure, the hanging structure at the center of the sensor
Including the first mass block (m1), the second mass block (m2), the first intermediate beam (ZL1), the second intermediate beam (ZL2) and four L-type beams,
Wherein, four L-type beams are split along longitudinal direction, forms eight L girders, respectively the first L girder (L1), the 2nd L is small
Beam (L2), the 3rd L girder (L3), the 4th L girder (L4), the 5th L girder (L5), the 6th L girder (L6), the 7th L girder (L7)
With the 8th L girder (L8).
2. monolithic integrated tri-axial acceleration sensor according to claim 1, which is characterized in that first mass block
(m1) and the second mass block (m2) is located at the center of the hanging structure, it is preferable that first mass block (m1) and the second matter
Gauge block (m2) is symmetrical arranged along the x direction center line or y direction center line of sensor.
3. monolithic integrated tri-axial acceleration sensor according to claim 1 or 2, which is characterized in that among described first
Beam (ZL1) and the second intermediate beam (ZL2) are set between first mass block (m1) and the second mass block (m2), for connecting
First mass block (m1) and the second mass block (m2)；
Preferably, first intermediate beam (ZL1) and the second intermediate beam (ZL2) are along the y direction center line of sensor or the direction x
Heart line is symmetrical arranged, and vertical with the first mass block (m1) and the second mass block (m2)；
It is highly preferred that the thickness of first intermediate beam (ZL1) and the second intermediate beam (ZL2) is equal to the thickness of device silicon.
4. according to claim 1 to monolithic integrated tri-axial acceleration sensor described in one of 3, which is characterized in that
The first mass block m1 is small backwards to the one side and the 2nd L of the first intermediate beam (ZL1) and the second intermediate beam (ZL2)
Beam (L2), the 7th L girder (L7), the 4th L girder (L4) and the connection of the 8th L girder (L8)；And/or
One side and first L of second mass block (m2) backwards to the first intermediate beam (ZL1) and the second intermediate beam (ZL2)
Girder (L1), the 5th L girder (L5), the 3rd L girder (L3) and the connection of the 6th L girder (L6).
5. according to claim 1 to monolithic integrated tri-axial acceleration sensor described in one of 4, which is characterized in that described
One L girder (L1), the 2nd L girder (L2), the 3rd L girder (L3) and the 4th L girder (L4) root be respectively arranged with and put down each other
Capable x is to the first varistor (Rx1), x is to the second varistor (Rx2), x is to third varistor (Rx3) and x it is pressure-sensitive to the 4th
Resistance (Rx4)；
Preferably, the x is to the first varistor (Rx1) one end and x to the second varistor (Rx2) one end be connected, connection
Place forms the first output voltage of x-axis (Vxout1)；The x is to third varistor (Rx3) one end and x to the 4th varistor
(Rx4) one end be connected, junction formed the second output voltage of x-axis (Vxout2)；
It is highly preferred that the x is to the first varistor (Rx1) the other end and x to the 4th varistor (Rx4) the other end it is common
Connect power supply (VDD), the x is to the second varistor (Rx2) the other end and x to third varistor (Rx3) another termination
Ground.
6. monolithic integrated tri-axial acceleration sensor according to one of claims 1 to 5, which is characterized in that described
Five L girders (L5), the 6th L girder (L6), the 7th L girder (L7) and the 8th L girder (L8) root be provided with y parallel to each other
To the first varistor (Ry1), y is to the second varistor (Ry2), y is to third varistor (Ry3) and y to the 4th varistor
(Ry4)；
Preferably, y is to the first varistor (Ry1) one end and y to the second varistor (Ry2) one end be connected, junction shape
At the first output voltage of y-axis (Vyout1)；Y is to third varistor (Ry3) one end and y to the 4th varistor (Ry4) one end
It is connected, junction forms the second output voltage of y-axis (Vyout2)；
It is highly preferred that y is to the first varistor (Ry1) the other end and y to the 4th varistor (Ry4) the other end connect jointly
Power supply (VDD), y is to the second varistor (Ry2) the other end and y to third varistor (Ry3) the other end ground connection.
7. monolithic integrated tri-axial acceleration sensor according to one of claims 1 to 6, which is characterized in that
First intermediate beam (ZL1) is respectively arranged in the root connecting with the first mass block (m1) and the second mass block (m2)
Orthogonal z is to the first varistor (Rz1) and z to the second varistor (Rz2)；And/or
Second intermediate beam (ZL2) is respectively arranged in the root connecting with the first mass block (m1) and the second mass block (m2)
Orthogonal z is to the 4th varistor (Rz4) and z to third varistor (Rz3)。
8. monolithic integrated tri-axial acceleration sensor according to one of claims 1 to 6, which is characterized in that the z is to
One varistor (Rz1) one end and z to the second varistor (Rz2) one end be connected, junction formed z-axis first export electricity
Press (Vzout1)；The z is to third varistor (Rz3) one end and z to the 4th varistor (Rz4) one end be connected, junction
Form the second output voltage of z-axis (Vzout2)；
Preferably, the z is to the first varistor (Rz1) the other end and z to the 4th varistor (Rz4) the other end connect jointly
Meet power supply (VDD), the z is to the second varistor (Rz2) the other end and z to third varistor (Rz3) the other end ground connection
(GND)。
9. the manufacture craft of monolithic integrated tri-axial acceleration sensor described in a kind of one of claim 1 to 8, which is characterized in that
The technique carries out as follows:
Step 1, cleaning SOI piece carry out once oxidation in device silicon (1) upper surface, grow SiO2Layer, as insulating medium layer；
Step 2, cleaning SOI piece, using plasma chemical vapor deposition original position doping process is in nc-Si:H (p-) sink on window
Product nc-Si:H (p-) film, a photoetching is carried out, etching forms nc-Si:H (p-) thin film piezoresitive；
Step 3, cleaning SOI piece, secondary photoetching carry out ion implanting in SOI piece device silicon (1) upper surface, carry out p+Type doping,
Being preferably injected dosage is 5E14cm-2To 5E15cm-2；
Step 4, cleaning SOI piece, the high temperature anneal form 12 varistors；
Step 5, cleaning SOI piece, secondary oxidation, chemical vapour deposition technique grow SiO in SOI piece device silicon (1) upper surface2Layer is made
For insulating medium layer；
Step 6, third photo etching, BOE corrode SiO2Layer forms contact hole；
Step 7, cleaning SOI piece form metal electrode layer in device silicon (1) upper surface Grown by Magnetron Sputtering metal Al layer；
Step 8, four mask corrode metal Al layer, form metal electrode；
Step 9, cleaning silicon chip, in device silicon (1) upper surface chemical vapor deposition growth SiO2Layer, preferred thickness 3000~
5000nm, as passivation layer；
Step 10, five photoetching, corrosion and passivation layer form pressure welding point；
Step 11, cleaning silicon chip carry out Alloying Treatment and form Ohmic contact；
Step 12, six photoetching, BOE corrode substrate silicon (2) bottom oxidization layer, and deep etching technology etched substrate silicon is etched to
At silicon dioxide layer (3)；
Step 13, seven photoetching, BOE corrosion device silicon (1) frontside oxide layer, deep etching technology etched features silicon (1), etching
To at silicon dioxide layer (3), 8 L trabecularisms are discharged；
Step 14, bonding technology, SOI piece are bonded with the sheet glass with overcurrent protection structure, realize overload protection function.
10. manufacture craft according to claim 9, which is characterized in that
The device silicon 1 of the SOI piece is<100>crystal orientation monocrystalline silicon, and conduction type is N-shaped, it is preferable that the device of the SOI piece
Resistivity the 0.01-10 Ω cm, preferably 0.1-1 Ω cm of silicon 1；And/or
In step 3, the nc-Si:H (p of deposition-) film with a thickness of 50~120nm, preferably 60~100nm；And/or
In steps of 5, the high temperature anneal carries out as follows: vacuum environment handles 20~50min at 600-1200 DEG C, excellent
Selection of land, vacuum environment handles 30~40min at 800-1000 DEG C；And/or
In step 12, the Alloying Treatment carries out as follows: 10~50min is handled at 350~500 DEG C, it is preferable that in
20~40min is handled at 400~450 DEG C, it is highly preferred that handling 30min at 420 DEG C.
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