CN109855656B - Transistor type sensing device - Google Patents
Transistor type sensing device Download PDFInfo
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- CN109855656B CN109855656B CN201910025969.7A CN201910025969A CN109855656B CN 109855656 B CN109855656 B CN 109855656B CN 201910025969 A CN201910025969 A CN 201910025969A CN 109855656 B CN109855656 B CN 109855656B
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Abstract
The invention relates to the field of application of wireless sensing technology of the Internet of things, in particular to a transistor type sensing device. The transistor type sensing device comprises a flexible sensing patch; the flexible sensing patch includes: attaching a film; the sensing structure is positioned on the surface of the attaching film and comprises at least one flexible transistor group used for detecting sensing information, and the flexible transistor group comprises a plurality of flexible transistors; the NFC chip is positioned on the surface of the attaching film and comprises a silicon substrate and a control structure positioned on the surface of the silicon substrate; the NFC chip is connected with the flexible transistor group and used for providing voltage signals to the flexible transistor group and receiving the sensing information detected by the flexible transistor group. The invention adopts the combination of the flexible transistor technology and the silicon-based chip technology, thereby greatly reducing the process complexity and the manufacturing cost of the sensing device.
Description
Technical Field
The invention relates to the field of application of wireless sensing technology of the Internet of things, in particular to a transistor type sensing device.
Background
The sensor layer is one of the bottommost layers in the application of the technology of the Internet of things, can be directly contacted with a human body or surrounding objects, is related to daily life and networks of people, and is an integral part of the Internet of things. With the increasing daily demand of people, more and more sensors are integrated in one system at the same time to adapt to diversified demands.
However, in the existing system integrating the sensor and the processor, the manufacturing cost is high due to the complex structure and the difficult process, and the application field of the sensing device is severely limited. Therefore, how to reduce the manufacturing cost of the sensing device is a technical problem to be solved.
Disclosure of Invention
The invention provides a transistor type sensing device which is used for solving the problems of complex structure and higher manufacturing cost of the existing sensing device.
In order to solve the above problems, the present invention provides a transistor-type sensing device, including a flexible sensing patch; the flexible sensing patch includes:
attaching a film;
the sensing structure is positioned on the surface of the attaching film and comprises at least one flexible transistor group used for detecting sensing information, and the flexible transistor group comprises a plurality of flexible transistors;
the NFC chip is positioned on the surface of the attaching film and comprises a silicon substrate and a control structure positioned on the surface of the silicon substrate;
the NFC chip is connected with the flexible transistor group and used for providing voltage signals to the flexible transistor group and receiving the sensing information detected by the flexible transistor group.
Preferably, the sensing structure includes a plurality of flexible transistor groups arranged in an array, and the plurality of flexible transistor groups are used for detecting various sensing information.
Preferably, the control structure comprises a processor, a digital-to-analog converter and an analog-to-digital converter; the processor is connected with the digital-to-analog converter and the analog-to-digital converter; the digital-to-analog converter is connected with a plurality of flexible transistor groups and is used for providing voltage signals for the flexible transistor groups; the analog-to-digital converter is connected with the plurality of flexible transistor groups and used for receiving the sensing information.
Preferably, the sensing information includes one or more of PH information, humidity information, temperature information, pressure information, stress information, and bioelectrical information.
Preferably, the NFC chip further includes a first flexible base located on the surface of the attachment film, and the silicon substrate is located on the surface of the first flexible base.
Preferably, the sensing structure further comprises a second flexible substrate located on the surface of the adhesive film, and the flexible transistor group is located on the surface of the second flexible substrate.
Preferably, the system also comprises a mobile terminal and a transmission module; the transmission module is connected with the mobile terminal and the flexible sensing patch and is used for data transmission between the mobile terminal and the flexible sensing patch.
Preferably, the transmission module comprises an NFC read-write unit and a long-distance transmission unit;
the remote transmission unit is connected with the NFC read-write unit and the mobile terminal, is used for receiving a control instruction of the mobile terminal and transmitting the control instruction to the NFC read-write unit, and is used for receiving data transmitted by the NFC read-write unit and feeding the data back to the mobile terminal;
the NFC read-write unit is connected with the remote transmission unit and the NFC chip, and is used for transmitting the control command issued by the remote transmission unit to the NFC chip, reading data in the NFC chip and feeding back the data to the remote transmission unit.
Preferably, the connection mode between the remote transmission unit and the mobile terminal is bluetooth connection, WIFI connection, ZigBee connection or NBIOT connection.
Preferably, the NFC chip further comprises a temperature sensor located on the surface of the silicon substrate; the temperature sensor is used for detecting the temperature of the sensing structure.
According to the transistor type sensing device, the sensing structure and the NFC chip are arranged in the flexible sensing patch, and the sensing structure adopts the flexible transistor group comprising a plurality of flexible transistors to acquire sensing information, so that the sensing structure has flexibility and can reduce the acquisition cost of the sensing information; the NFC chip comprises a silicon substrate and a control structure positioned on the surface of the silicon substrate, and the high performance of the silicon-based chip is utilized to control, collect and process signals of the sensing structure. The combination of the flexible transistor technology and the silicon-based chip technology greatly reduces the process complexity and the manufacturing cost of the sensing device.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a transistor-type sensing device in accordance with an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a flexible sensing patch in accordance with an embodiment of the present invention;
fig. 3 is a schematic diagram of a flexible transistor array in accordance with an embodiment of the present invention.
Detailed Description
The following describes in detail a specific embodiment of the transistor-type sensing device according to the present invention with reference to the drawings.
Fig. 1 is a schematic structural diagram of a transistor-type sensing device according to an embodiment of the present invention, and fig. 2 is a schematic structural diagram of a flexible sensing patch according to an embodiment of the present invention.
As shown in fig. 1 and fig. 2, the transistor-type sensing device provided in the present embodiment includes a flexible sensing patch 10; the flexible sensing patch 10 includes:
an adhesive film 20;
the sensing structure 102 is positioned on the surface of the attaching film 20 and comprises at least one flexible transistor group 28 for detecting sensing information, and the flexible transistor group comprises a plurality of flexible transistors;
an NFC (Near Field Communication) chip 101 located on the surface of the attachment film 20, and including a silicon substrate 21 and a control structure located on the surface of the silicon substrate 21;
the NFC chip 101 is connected to the flexible transistor group 28, and is configured to provide a voltage signal to the flexible transistor group 28 and receive the sensing information detected by the flexible transistor group 28.
In order to obtain a plurality of kinds of sensing information and improve the application flexibility of the transistor-type sensing device, it is preferable that the sensing structure 102 includes a plurality of the flexible transistor groups 28 arranged in an array, and the plurality of the flexible transistor groups 28 are used for detecting a plurality of kinds of sensing information. That is, a plurality of the flexible transistor groups 28 detect a plurality of kinds of sensing information one by one, so that a plurality of information parameters can be acquired simultaneously.
Specifically, the adhesive film 20 may be a flexible adhesive film made of a polymer material, and can be directly attached to an object surface (e.g., a human skin surface), so that the applicability is wide and the cost is low. The sensing structure 102 is manufactured based on flexible transistor technology, which has the advantages of flexibility and low cost. The flexible transistor can be an organic thin film transistor, an oxide thin film transistor or a thin film transistor of other novel material types, and can be selected by a person skilled in the art according to actual needs. The flexible transistor group 28 is used as a row selection switch device and a sensing front-end device at the same time to collect sensing information, so that on one hand, the sensitivity and the accuracy of sensing information detection can be improved, and on the other hand, the integration level of the sensing structure can be improved, thereby simplifying the overall structure of the transistor type sensing device and reducing the manufacturing cost. The specific structure of the flexible transistor group 28 can be selected according to the type of sensing information to be collected. The NFC chip 101 is manufactured by using a silicon-based transistor technology, and controls, collects and processes signals of the sensing structure by using the high performance of the silicon-based chip, and can provide voltage signals to the flexible transistor group 28 in the sensing structure 102 to control whether the flexible transistors in the flexible transistor group 28 are turned on, so that no additional power supply needs to be provided in the sensing structure 102, thereby further simplifying the manufacturing cost of the transistor-type sensing device.
Fig. 3 is a schematic diagram of a flexible transistor array in accordance with an embodiment of the present invention. The specific structure of the flexible transistor group 28 can be set by those skilled in the art according to actual needs, and the present embodiment is not limited thereto as long as the sensing information can be detected. The following description will be given taking an example in which the flexible transistor group 28 includes three flexible transistors.
As shown in fig. 3, the flexible transistor group includes a first flexible transistor T1, a second flexible transistor T2, and a third flexible transistor T3, wherein a dotted line box a represents a sensing front-end device, and a dotted line box B represents a row selection switch device. The principle of using the first flexible transistor T1 as a row selection switch device in the dashed line box B is to utilize the switching characteristics of flexible transistors, and when reading the sensing information, the flexible transistors in one flexible transistor group are turned on by receiving a row selection control voltage from the NFC chip 101. In the dashed line frame a, the second flexible transistor T2 and the third flexible transistor T3 are used as the sensing front-end device, and an inverter structure of the flexible transistors is used to amplify the change of the input voltage caused by the sensing information into an output voltage which can be detected by the NFC chip 101 and then transmitted to the NFC chip 101, so that the detection rule of the sensing front-end device on the sensing information is obtained, and the sensing information is finally detected.
Preferably, the control structure comprises a processor 23, a digital-to-analog converter 24 and an analog-to-digital converter 25; the processor 23 is connected with the digital-to-analog converter 24 and the analog-to-digital converter 25; the digital-to-analog converter 24 is connected to a plurality of the flexible transistor groups 28, and is used for providing voltage signals to the flexible transistor groups 28; the analog-to-digital converter 24 is connected to a plurality of the flexible transistor groups 28 for receiving the sensing information.
Specifically, the digital-to-analog converter 24 transmits a first voltage signal to the flexible transistors in the flexible transistor group 28 through the first channels 291 according to a first control signal of the processor 23, and controls all the flexible transistors in the flexible transistor group 28 to be turned on, so as to acquire the sensing information. The plurality of flexible transistor groups 28 transmit the acquired sensing information to the analog-to-digital converter 25 through the plurality of second channels 292, respectively, and the analog-to-digital converter 25 processes the received sensing information and transmits the processed sensing information to the processor 23. After the acquisition of the sensing information is completed, the digital-to-analog converter 24 transmits a second voltage signal to the plurality of flexible transistor groups 28 through the plurality of first channels 291 according to a second control signal of the processor 23, so as to turn off all flexible transistors in the flexible transistor groups 28.
The specific type of the sensing information can be selected by those skilled in the art according to actual needs. Preferably, the sensing information includes one or more of PH information, humidity information, temperature information, pressure information, stress information, and bioelectrical information.
Preferably, the NFC chip 101 further includes a first flexible substrate 22 located on the surface of the attachment film 20, and the silicon substrate 21 is located on the surface of the first flexible substrate 22.
Specifically, the silicon substrate 21 and the first and second channels 291 and 292 are located on the surface of the first flexible substrate 22 to further increase the flexibility of the flexible sensing patch 10. The first flexible substrate 22 may be a flexible circuit board. The first and second vias 291 and 292 can be directly formed on the surface of the first flexible substrate 22, and the silicon substrate 21 is packaged on the surface of the first flexible substrate 22 by a specific packaging process. The specific packaging process may be, but is not limited to, a COF (Chip On Film) packaging process, a QFN (Quad Flat No-lead package) process, and the like.
Preferably, the sensing structure 102 further includes a second flexible substrate 27 located on the surface of the adhesive film 20, and the flexible transistor group 28 is located on the surface of the second flexible substrate 27.
The flexible transistor group 28 formed by a plurality of flexible transistors has a certain flexibility, and placing the flexible transistor group 28 on the surface of the second flexible substrate 27 can protect each flexible transistor in the flexible transistor group 28, thereby improving the service life of the flexible transistor group 28, and further improving the flexibility of the flexible sensing patch 10.
Preferably, the transistor-type sensing device further comprises a mobile terminal 12 and a transmission module 11; the transmission module 11 is connected to the mobile terminal 12 and the flexible sensing patch 10, and is configured to perform data transmission between the mobile terminal 12 and the flexible sensing patch 10.
Preferably, the transmission module 11 includes an NFC read-write unit 112 and a long-distance transmission unit 111;
the remote transmission unit 111 is connected to the NFC read-write unit 112 and the mobile terminal 12, and is configured to receive a control instruction of the mobile terminal 12, transmit the control instruction to the NFC read-write unit 112, and receive data transmitted by the NFC read-write unit 112 and feed the data back to the mobile terminal 12;
the NFC read-write unit 112 is connected to the remote transmission unit 111 and the NFC chip 101, and is configured to transmit the control instruction issued by the remote transmission unit to the NFC chip 101, and is configured to read data in the NFC chip 101 and feed the data back to the remote transmission unit 111.
The mobile terminal 12 may be one or more of a mobile phone, a notebook computer, a tablet computer, a desktop computer, a network server, and a local server.
The long-distance transmission unit 111 is configured to perform data interaction between the NFC read-write unit 112 and the mobile terminal 12, and the NFC read-write unit 112 is configured to perform data interaction between the long-distance transmission unit 111 and the NFC chip 101. Specifically, the mobile terminal 12 issues a sensing information acquisition request to the remote transmission unit 111, and the remote transmission unit 111 receives the request information of the mobile terminal 12, processes the request information, and transmits the processed request information to the NFC read-write unit 112; the NFC read-write unit 112 writes the request information into the processor 23 in the NFC chip 101; the processor 23 controls the digital-to-analog converter 24 to transmit a first voltage signal to the flexible transistor group 28, so that all flexible transistors in the flexible transistor group 28 are turned on to collect the sensing information; then, the flexible transistor group 28 transmits the acquired sensing information to the processor 23 after processing by the analog-to-digital converter 25; the NFC read-write unit 112 reads the sensing information from the processor 23 and transmits the sensing information to the long-distance transmission unit 111; the remote transmission unit 111 processes the sensing information and feeds the processed sensing information back to the mobile terminal 12.
In the embodiment, by arranging the mobile terminal 12 and the transmission module 11, the user can remotely control the flexible sensing patch 10, and can control the sensing structure in the flexible sensing patch 10 in real time or intermittently according to needs to collect sensing signals, so that the sensing information can be remotely monitored in real time or intermittently.
Preferably, the connection mode between the remote transmission unit 111 and the mobile terminal 12 is bluetooth connection, WIFI connection, ZigBee (ZigBee) connection, or NBIOT (Narrow Band Internet of Things) connection. The remote transmission unit 111 processes the request information issued by the mobile terminal 12 or the sensing information uploaded by the NFC read-write unit 112 according to a specific connection mode with the mobile terminal 12.
In addition, since the NFC chip 101 and the flexible transistors in the flexible transistor group 28 require less energy when operating, the flexible sensing patch 10 in this embodiment may further use the energy of the wireless signal collected by the antenna in the NFC chip 101 as the operating power source of the NFC chip 101 itself and the flexible transistors in the flexible transistor group 28, so that the flexible sensing patch 10 as a whole does not need to be provided with an additional power supply for supplying power, thereby further reducing the cost of the transistor-type sensing device. The wireless signal collected by the NFC chip 101 may be from the NFC read-write unit 112.
Preferably, the NFC chip 101 further includes a temperature sensor 26 located on the surface of the silicon substrate 21; the temperature sensor 26 is used to detect the temperature of the sensing structure 102. By providing the temperature sensor 26, the temperature inside the flexible sensing patch 10 can be monitored, and the sensing structure 102 is prevented from being damaged due to overhigh temperature.
In the transistor-type sensing device provided by the present embodiment, the sensing structure and the NFC chip are disposed in the flexible sensing patch, and the sensing structure adopts the flexible transistor group including the plurality of flexible transistors to acquire the sensing information, so that the sensing structure has flexibility and can reduce the cost for acquiring the sensing information; the NFC chip comprises a silicon substrate and a control structure positioned on the surface of the silicon substrate, and the high performance of the silicon-based chip is utilized to control, collect and process signals of the sensing structure. The combination of the flexible transistor technology and the silicon-based chip technology greatly reduces the process complexity and the manufacturing cost of the sensing device.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A transistor-type sensing device comprising a flexible sensing patch; the flexible sensing patch includes:
attaching a film;
the sensing structure is positioned on the surface of the attaching film and comprises at least one flexible transistor group used for detecting sensing information, the flexible transistor group includes a first flexible transistor, a second flexible transistor and a third flexible transistor, the control end of the first flexible transistor is connected with a row selection control voltage, the first end of the first flexible transistor is connected with an output voltage, the second end of the first flexible transistor is simultaneously connected with the first end of the second flexible transistor and the first end of the third flexible transistor, the control end of the second flexible transistor is connected with an input voltage, the second end of the second flexible transistor is connected with a power supply, the control terminal of the third flexible transistor and the second terminal of the third flexible transistor are both grounded, the first flexible transistor is used as a row selection switch device, and the second flexible transistor and the third flexible transistor are jointly used as a sensing front-end device;
the NFC chip is positioned on the surface of the attaching film and comprises a silicon substrate and a control structure positioned on the surface of the silicon substrate;
the NFC chip is connected with the flexible transistor group and used for providing voltage signals to the flexible transistor group and receiving the sensing information detected by the flexible transistor group.
2. The transistor-type sensing device according to claim 1, wherein the sensing structure comprises a plurality of flexible transistor groups arranged in an array, and the plurality of flexible transistor groups are used for detecting a plurality of kinds of sensing information.
3. The transistor-type sensing device of claim 2, wherein the control structure comprises a processor, a digital-to-analog converter and an analog-to-digital converter; the processor is connected with the digital-to-analog converter and the analog-to-digital converter; the digital-to-analog converter is connected with a plurality of flexible transistor groups and is used for providing voltage signals for the flexible transistor groups; the analog-to-digital converter is connected with the plurality of flexible transistor groups and used for receiving the sensing information.
4. The transistor-type sensing device according to claim 1, wherein the sensing information comprises one or more of PH information, humidity information, temperature information, pressure information, stress information, and bioelectrical information.
5. The transistor-type sensing device according to claim 1, wherein the NFC chip further includes a first flexible base on a surface of the adhesive film, and the silicon substrate is on a surface of the first flexible base.
6. The transistor-type sensing device of claim 5, wherein the sensing structure further comprises a second flexible substrate on the surface of the adhesive film, and the flexible transistor group is on the surface of the second flexible substrate.
7. The transistor-type sensing device according to claim 1, further comprising a mobile terminal and a transmission module; the transmission module is connected with the mobile terminal and the flexible sensing patch and is used for data transmission between the mobile terminal and the flexible sensing patch.
8. The transistor-type sensing device according to claim 7, wherein the transmission module comprises an NFC read-write unit and a long-distance transmission unit;
the remote transmission unit is connected with the NFC read-write unit and the mobile terminal, is used for receiving a control instruction of the mobile terminal and transmitting the control instruction to the NFC read-write unit, and is used for receiving data transmitted by the NFC read-write unit and feeding the data back to the mobile terminal;
the NFC read-write unit is connected with the remote transmission unit and the NFC chip, and is used for transmitting the control command issued by the remote transmission unit to the NFC chip, reading data in the NFC chip and feeding back the data to the remote transmission unit.
9. The transistor-type sensing device of claim 8, wherein the connection between the remote transmission unit and the mobile terminal is a bluetooth connection, a WIFI connection, a ZigBee connection, or an NBIOT connection.
10. The transistor-type sensing device according to claim 1, further comprising a temperature sensor on the surface of the silicon substrate in the NFC chip; the temperature sensor is used for detecting the temperature of the sensing structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910025969.7A CN109855656B (en) | 2019-01-11 | 2019-01-11 | Transistor type sensing device |
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| CN201910025969.7A CN109855656B (en) | 2019-01-11 | 2019-01-11 | Transistor type sensing device |
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| CN109855656A CN109855656A (en) | 2019-06-07 |
| CN109855656B true CN109855656B (en) | 2021-07-02 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102737582B (en) * | 2012-04-06 | 2014-07-09 | 信利工业(汕尾)有限公司 | Termination point (TP) On/In Cell type organic electroluminescent display integrated with near field communication (NFC) antenna |
| CN102871652A (en) * | 2012-09-05 | 2013-01-16 | 上海交通大学 | Near field communication (NFC) and printed circuit technology-based thermometer |
| KR101520247B1 (en) * | 2013-02-27 | 2015-05-15 | 주식회사 케이티 | Method And System For Biometric Data Management |
| FR3062539B1 (en) * | 2017-01-31 | 2019-03-29 | Stmicroelectronics (Tours) Sas | PORTABLE PHONE CASE |
| CN108627543B (en) * | 2017-03-23 | 2022-02-01 | 张家港康得新光电材料有限公司 | Flexible gas sensor and manufacturing method thereof |
| CN108382729B (en) * | 2018-01-22 | 2020-02-18 | 上海交通大学 | Packaging box with NFC chip and control method thereof |
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