Summary of the invention
The object of the present invention is to provide a kind of micro-electro-mechanical sensors encapsulating structure and manufacturing methods, to solve in the prior art
Existing high production cost, the problem that process flow is complicated, product yield is low, consistency is poor, production efficiency is low.It improves micro electronmechanical
Production efficiency, product yield and the simplification of flowsheet of sensor-packaging structure reduce its production cost.
On the one hand, the present invention provides a kind of micro-electro-mechanical sensors encapsulating structure characterized by comprising
First substrate;
The side of the first substrate is arranged in the second substrate, the second substrate;
The other side of the first substrate, shape between the shell and the first substrate is arranged in shell, the shell
At cavity;
Chip, chip setting in the case inside, position in the cavity, and via metal wire and described first
Substrate electrical connection;
Wherein, first through hole is provided on the first substrate, the area of the first through hole is greater than the face of the chip
Product, the position of the first through hole are corresponding with the chip position.
Preferably, the chip includes MEMS chip and asic chip, the MEMS chip, asic chip and the first base
Plate is electrically connected by the metal wire.
Preferably, the shell is provided with the second through-hole, and second through-hole is located on the inside of the MEMS chip.
Preferably, at least partly region of the side of first through hole and the first substrate side is set in the first substrate
It is equipped with the first metal layer, the other side of the first substrate is provided with second metal layer.
Preferably, at least partly region of the second substrate side adjacent with the first substrate is provided with third metal
Layer.
Preferably, the partial region of the first metal layer is provided with the first solder mask, the part of the third metal layer
Region is provided with the second solder mask, and the position of at least partly described second solder mask is opposite with the position of first solder mask
It answers.
Preferably, first solder mask and the sum of the second solder mask and the thickness of third metal layer, not less than described
The loop height of metal wire.
On the other hand, the present invention also provides a kind of manufacturing methods of micro-electro-mechanical sensors encapsulating structure, which is characterized in that packet
It includes:
Multiple shells are connected with first substrate;
Pasting chip is distinguished on the multiple shell;
The chip is electrically connected with the first substrate;
The second substrate is connected with the first substrate, forms semi-finished product;
Cutting separation is carried out to semi-finished product, to obtain multiple independent micro-electro-mechanical sensors encapsulating structures;
Wherein, a plurality of cavities are formed between the first substrate and the shell, the chip is located in the cavity, institute
It is corresponding with the second substrate to state first substrate, the first substrate and the second substrate include multiple micro electronmechanical sensings
Device unit.
Preferably, the chip includes MEMS chip and asic chip, is arranged using surface mounting technology in the shell
On, it is connected between the MEMS chip, the asic chip and the first substrate by metal wire.
Preferably, the partial region of first substrate side adjacent with the second substrate is provided with the first metal layer,
The partial region of the first metal layer is provided with the first solder mask;The second substrate side adjacent with the first substrate
It is provided with third metal layer, the partial region of the third metal layer is provided with the second solder mask;First solder mask and
The sum of two solder masks and the thickness of third metal layer, not less than the loop height of the metal wire.
Preferably, pass through between the shell and the first substrate, between the first substrate and the second substrate
Connecting material is connected, and the connecting material includes at least one of tin cream, conducting resinl, insulating cement.
Preferably, decide whether that, using conductive connecting material, setting is electrical while completing mechanical connection as needed
Connection.
Preferably, the first substrate is connected by way of single pressing contraposition with the second substrate, to reduce
Error.
Micro-electro-mechanical sensors encapsulating structure provided in an embodiment of the present invention and manufacturing method, set by using the encapsulating structure
Meter makes the micro-electro-mechanical sensors for needing to produce one by one originally encapsulation knot using conventional process and material
Structure realizes batch production, is conducive to the consistency of control production product, improves production efficiency and product yield, further
Ground, first substrate are connected by way of single pressing contraposition with the second substrate, reduce error, and simplify technique
Process reduces production cost.
Further, in encapsulating structure design, the matched demand of special longitudinal size is had no between each component, and need to cut
The material for cutting the part of separation is similar, and need to cut has certain difference in height between separate section and housing bottom surface, can pass through
The amount of feeding of cutter is set, is targetedly cut to separate section need to be cut.Meanwhile in first substrate and the second substrate
The also settable positioning identifier in edge, the aligning accuracy being remarkably improved between substrate.Material (tin cream) is attached by web plate
Be coated with, can effectively control the thickness and uniformity of connecting material, guarantee the quality of connection of product.
Specific embodiment
Hereinafter reference will be made to the drawings, and the present invention will be described in more detail.In various figures, identical element is using similar attached
Icon is remembered to indicate.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.Furthermore, it is possible to be not shown certain
Well known part.For brevity, the semiconductor structure obtained after several steps can be described in a width figure.
It should be appreciated that in description scheme, when one layer, a region are known as be located at another layer, another region " on
When face " or " top ", it can refer to above another layer, another region, or in itself and another layer, another region
Between also comprising other layers or region.Also, if device overturn, this layer, region will be located at another layer, another
A region " following " or " lower section ".
If will use " directly exist ... herein to describe located immediately at another layer, another region above scenario
Above " or " ... abut above and therewith " form of presentation.
Many specific details of section Example of the present invention, such as the structure of device, material, ruler are described hereinafter
Very little, treatment process and technology, to be more clearly understood that the present invention.But just as the skilled person will understand that
Sample can not realize the present invention according to these specific details.
The present invention can be presented in a variety of manners, some of them example explained below.
Fig. 1 shows the schematic diagram of the micro-electro-mechanical sensors encapsulating structure of the embodiment of the present invention, micro-electro-mechanical sensors envelope
Assembling structure 100 includes: first substrate 110, the second substrate 120, shell 130 and chip 140.Wherein, the upper table of first substrate 110
Face is adjacent with the lower surface of the second substrate 120, and the lower surface of first substrate 110 is adjacent with shell 130, shell 130 and the first base
Cavity is formed between plate 110, chip 140 is located at 130 inside of shell, is located in the cavity.
Of course, it is provided with first through hole 111 on first substrate 110, the top positioned at chip 140 of first through hole 111,
The area of first through hole 111 is greater than the area of chip 140, in order to the attachment of chip 140.The part of the upper surface of first substrate
Region is provided with the first metal layer 112, further, the also extensible side wall for being set to first through hole 111 of the first metal layer 112
On, the first solder mask 1121 is additionally provided on part the first metal layer 112.Is additionally provided on the lower surface of first substrate 110
Two metal layers 113, for being connected by connecting material 150 with shell 130.
The lower surface of the second substrate 120 is provided with third metal layer 121, is additionally provided on part third metal layer 121
Second solder mask 1211, the second solder mask of part 1211 is corresponding with the first solder mask 1121, and the second substrate 120 is not by second
Pass through the first metal layer in connecting material 150 and first substrate 110 on the part third metal layer 121 that solder mask 1211 covers
It is connected.
Shell 130 is, for example, bottle cap shape, including the second through-hole 131, upper surface and the first substrate 110 at 130 edge of shell
Second metal layer on lower surface is connected by connecting material 150, makes to form cavity between shell 130 and first substrate 110,
The setting of chip 140 is located in the cavity in 130 inside of shell.Chip 140 is for example including MEMS chip 141 and asic chip
142, wherein the first metal layer 112 of MEMS chip 141, asic chip 142 and first substrate 110 passes sequentially through metal wire
143 electrical connections, the second through-hole 131 are located at 141 inside of MEMS chip.
Connecting material 150 includes scolding tin, tin cream, conducting resinl, insulating cement etc., is connected by connecting material 150 in needs
Corresponding mechanical connection is set between component, and can be decided whether as needed using conductive connecting material 150, it is mechanical in setting
Corresponding electrical connection is set while connection.
Further, it is electrically connected by metal wire 143 with the first metal layer 112 on first substrate 110 due to chip 140
It connects, therefore the first solder mask 1121 and the sum of the second solder mask 1211 and the thickness of third metal layer 121, metal wire should be not less than
143 loop height reserves enough spaces with the setting for metal wire 143.
Shell 130 is for example connected by scolding tin with the second metal layer 113 of 110 lower surface of first substrate, the second substrate 120
Such as by being coated with solder(ing) paste on third metal layer after, carry out pressing contraposition with the upper surface of first substrate 110, and returned
Fluid welding solidifies solder(ing) paste, completes the connection between first substrate 120 and first substrate 110.
Fig. 2 shows the schematic diagrames of the manufacturing method of the micro-electro-mechanical sensors encapsulating structure of the embodiment of the present invention, specific to walk
Suddenly include:
Multiple shells are connected by S10 with first substrate;First substrate 110 designs for jigsaw, including multiple micro electronmechanical sensings
Device unit is provided with the second metal layer being connected with shell 130 in the corresponding position of each micro-electro-mechanical sensors unit
113, each shell 130 is connected with a micro-electro-mechanical sensors unit on first substrate 110, and connecting material 150 is, for example,
Multiple shells 130 are respectively connected to corresponding micro-electro-mechanical sensors in first substrate 110 in such a way that scolding tin welds by scolding tin
On unit.
S20 distinguishes pasting chip on multiple shells;Chip 140 for example including MEMS chip 141 and asic chip 142,
First through hole 111 is provided on first substrate 110, the position of first through hole 111 is corresponding with the position of chip 140, such as position
In the top of chip 140, the area of first through hole 111 is greater than the area of chip 140, in order to the attachment of chip 140.With one
For micro-electro-mechanical sensors unit, chip 140 is set in the inside of shell 130 through first through hole 111, for example, by using SMT
The mode of (surface mounting technology: surface mounting technique) pastes MEMS chip 141 and asic chip 142
Inside loaded on shell 130.Of course, the second through-hole 131 is provided on shell 130, the second through-hole 131 is located at MEMS chip
141 insides.
S30 forms metal connecting line between chip and the surface of first substrate;Specifically, can MEMS chip 141 with
Metal is arranged between asic chip 142 and between the first metal layer 112 on 110 surface of asic chip 142 and first substrate to connect
Chip 140 is electrically connected by line by metal wire 143 with the first metal layer 112 on 110 surface of first substrate, and formation is led accordingly
Electric channel.
The second substrate is connected by S40 with the first substrate, semi-finished product are made;The second substrate 120 be, for example, and first
The design of the same jigsaw of substrate 110, the second substrate 120 is corresponding with first substrate 110, equally has multiple microcomputer fax
Sensor cell.Of course, after can the components such as the capacitance resistance of needs being set in the second substrate in advance, then by itself and the first base
Plate 110 is attached.For example by tin cream between the second substrate 120 and first substrate 110, in the second substrate 120 and the first base
After the contraposition pressing of plate 110, it is connected by way of Reflow Soldering.
S50 carries out cutting separation to semi-finished product, obtains multiple independent micro-electro-mechanical sensors encapsulating structures.Due to the first base
Plate 110 and the second substrate 120 are all made of jigsaw design, therefore the second substrate is connect with first substrate in previous step after the completion of needs
Cutting separation is carried out to the semi-finished product obtained after connection, to obtain independent micro-electro-mechanical sensors encapsulating structure.Due to the first base
Plate 110 and the material of the second substrate 120 are essentially identical, can be used corresponding cutter that semi-finished product can be completed by primary feed
Cutting.
Wherein, the manufacture of micro-electro-mechanical sensors encapsulating structure is not necessarily carried out according to sequence the step of S10-S50, such as
The sequence of step S10 and step S20 can be exchanged, not influence the manufacture of the micro-electro-mechanical sensors encapsulating structure equally.
The batch of whole plate may be implemented in the micro-electro-mechanical sensors encapsulating structure that the manufacturing method makes script need to produce one by one
Production is conducive to the consistency of control production product, improves product yield, and its size matching being related to is also conventional reflux
The soluble problem of Welding has very strong production stability and practicability.
Fig. 3 shows the partial schematic diagram that first substrate of the embodiment of the present invention is connected with shell.First substrate 110 is for example logical
It crosses raw material to be process, for raw material for example, by using pcb board material, the fringe region of first substrate 110 is similar with technique edges, can set
Corresponding telltale mark is set to guarantee its aligning accuracy between remaining part.
As shown in the figure is the partial cross-sectional view of first substrate 110, includes laterally 3 micro-electro-mechanical sensors units, with one
For micro-electro-mechanical sensors unit, first through hole 111 is provided on first substrate 110, in the partial region of first substrate side,
And the side of first through hole 111 is provided with the first metal layer 112, and the first solder mask is additionally provided on the first metal layer 112
1121, the partial region of the other side of first substrate 110 is provided with second metal layer 113, as the weldering being connected with shell 130
Disk.First substrate 110 is had the one of the first metal layer 112 down, the inner surface of shell 130 is towards first substrate 110
Second metal layer 113, and the edge of shell 130 is directed at second metal layer 113, by connecting material 150 by shell 130 and the
One substrate 110 is connected, and connecting material 150 is, for example, scolding tin, and the edge of shell 130 is soldered in second metal layer 113, shell is made
Cavity is formed between body 130 and first substrate 110.The second through-hole 131 is provided on shell 130, the second through-hole 131 is located at first
The top of through-hole 111, the area of the second through-hole 131 are less than the area of first through hole 111.
Fig. 4 a shows the partial schematic diagram of pasting chip of the embodiment of the present invention.By the shell 130 and the first base after connection
Plate 110 is overturn, and makes the outside of shell 130 downward, the first metal layer 112 of first substrate 110 upward, in shell 130
Side pasting chip 140.Similarly, by taking a micro-electro-mechanical sensors unit as an example, shell 130 is connected with first substrate 110,
Corresponding cavity is formd between the two, the first through hole 111 on first substrate 110, opposite with first through hole 111
The inner side pasting chip 140 of shell 130, of course, (projection) area of chip 140 are less than (throwing for first through hole 111
Shadow) area, chip 140 is mounted by the way of SMT for example including MEMS chip 141 and asic chip 142, and is passed through
Reflow Soldering is solidified.Other patch modes such as SMT mounting method ratio Diebond are more efficient, are more favorable to control production
Consistency.Shell 130 includes that the second through-hole 131 makes the second through-hole 131 be located at MEMS chip when mounting MEMS chip 141
141 insides.
After the completion of chip 140 mounts, metal wire 143 is set, by MEMS chip 141, asic chip 142 and the first base
The first electrode layer 112 on 110 surface of plate is sequentially connected electrically.The first metal layer 112 may include multiple connected or independent pads, by
The second substrate 120 can be set to the top of first substrate 110 in subsequent step, therefore asic chip 142 and first substrate 110
There is the risk weighed wounded Bei (the second substrate 120) in the metal wire 143 between the first electrode layer 112 on surface, lead to itself and first
The first metal layer 112 of 111 side wall of through-hole is in contact, and causes short circuit.Preferably, as shown in Figure 4 b, first through hole will be set to
The longitudinal size of the first metal layer 112 of 111 side walls reduces, and the surface of itself and first substrate 110 is made to have a certain distance, from
And avoid the occurrence of that short-circuit risks and metal wire 143 are weighed wounded.
Fig. 5 shows the partial schematic diagram that the second substrate of the embodiment of the present invention is connected with first substrate, has described portion before
Point details are not described herein.The partial region of one side surface of the second substrate is provided with third metal layer 121, part third metal layer
The second solder mask 1211 is provided on 121, by taking the connecting material 150 between the second substrate and first substrate selects tin cream as an example,
Position not covered with the second solder mask 1211 in part third metal layer 121 is coated with tin cream, and further, tin cream can be with
Be coated with by web plate, be coated with tin cream using web plate, gesture tin cream, draw glue or other modes it is more efficient, be more favorable to control
Make the consistency of production.Similarly, the fringe region of the second substrate 120 is also equipped with the structure similar with technique edges, with
The fringe region of one substrate 110 is corresponding.
Downward by the side for being provided with third metal layer 121 in the second substrate 120, there is the first gold medal with first substrate 110
The side contraposition for belonging to layer 112 is arranged and is pressed, and solidifies tin cream by the way of Reflow Soldering, to make the second substrate 120
It is connected with first substrate 110.It is aligned between first substrate 110 and the second substrate 120 using single pressing and carries out Reflow Soldering
Connection type is conducive to improve product yield to reduce cumulative errors caused by repeatedly pressing contraposition.
Of course, institute can be set in the second substrate 120 in advance before the second substrate 120 is connect with first substrate 110
Electrical first device such as capacitor, resistance, diode needed or chip, and the operation such as sealing is carried out to electrical component or chip, second
Device on substrate 120 carries out the combination and connection with first substrate 110 again after being provided with.
Further, chip is guaranteed by the first solder mask 1121 and the second solder mask 1211 and third metal layer 121
The bulk of 140 regions.Specifically, the thickness of the first solder mask 1121, the second solder mask 1211 and third metal layer 121
The sum of degree should be not less than the loop height of metal wire 143.
Fig. 6 shows the embodiment of the present invention and carries out cutting isolated partial schematic diagram.Cutting separation is being carried out to semi-finished product
When, the appearance of shell 130 is face-down, it is directly bonded with the film 210 of lower section, prevents sundries from entering second by film 210
Through-hole 131.Multiple micro-electro-mechanical sensors units in semi-finished product are subjected to cutting separation by cutter 220, it is independent to obtain
Micro-electro-mechanical sensors encapsulating structure 100.
First substrate 110 and the second substrate 120 generally select PCB material, and steel knife or other hard can be selected in cutter 220
Cutter specifically, and since first substrate 110 and the second substrate 120 have a certain distance between film 210, therefore can lead to
The feeding depth for crossing setting cutter 220 is completed in the case where not damaging film 210 to first substrate 110 and the second substrate
120 cutting, so that multiple micro-electro-mechanical sensors encapsulating structures in semi-finished product are separated from each other.
In the above description, the technical details such as composition, the cutting of each device are not described in detail.But
It is it will be appreciated by those skilled in the art that can be by various technological means, come layer, the region etc. for forming required shape.In addition,
In order to form same structure, those skilled in the art be can be devised by and process as described above not fully identical side
Method.In addition, although respectively describing each embodiment above, but it is not intended that the measure in each embodiment cannot have
It is used in combination sharply.
The embodiment of the present invention is described above.But the purpose that these embodiments are merely to illustrate that, and
It is not intended to limit the scope of the invention.The scope of the present invention is by appended claims and its equivalents.The present invention is not departed from
Range, those skilled in the art can make a variety of alternatives and modifications, these alternatives and modifications should all fall in model of the invention
Within enclosing.