CN109848122A - The cleaning method of SiC panel surface AlN film layer - Google Patents
The cleaning method of SiC panel surface AlN film layer Download PDFInfo
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- CN109848122A CN109848122A CN201811633428.4A CN201811633428A CN109848122A CN 109848122 A CN109848122 A CN 109848122A CN 201811633428 A CN201811633428 A CN 201811633428A CN 109848122 A CN109848122 A CN 109848122A
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- Prior art keywords
- sic
- film layer
- disk
- aln film
- immersion
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- 238000004140 cleaning Methods 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000007654 immersion Methods 0.000 claims abstract description 22
- 239000012530 fluid Substances 0.000 claims abstract description 12
- 238000011010 flushing procedure Methods 0.000 claims abstract description 9
- 238000004544 sputter deposition Methods 0.000 claims abstract description 9
- 238000005406 washing Methods 0.000 claims abstract description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 239000003513 alkali Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 51
- 229910010271 silicon carbide Inorganic materials 0.000 description 51
- 229910017083 AlN Inorganic materials 0.000 description 24
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 206010021703 Indifference Diseases 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005422 blasting Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The present invention provides a kind of cleaning methods of SiC panel surface AlN film layer, comprising: has the SiC disk of AlN film layer to be put into alkaline cleaning fluid sputtering and impregnates；SiC disk after immersion is put into warm water tank and is impregnated；By the SiC disk warm water washing after immersion；SiC disk after flushing is put into baking oven and is toasted, the cleaning to SiC panel surface AlN film layer is completed, SiC disk will not be damaged while SiC panel surface AlN film layer can be effectively removed.
Description
Technical field
The present invention relates to technical field of semiconductors, especially a kind of cleaning method of SiC panel surface AlN film layer.
Background technique
For SiC (silicon carbide) disk after sputtering AlN (aluminium nitride), surface can deposit one layer of ALN film layer.Traditional high temperature baking oven
Curing process not only can not effectively handle the AlN film layer, can form better quality, finer and close AlN film in SiC panel surface instead
Layer, and then influence the thermal conductivity of SiC disk.Although blasting treatment can effectively remove AlN film layer, inevasible to damage
SiC disk causes the service life of SiC disk substantially to reduce.
Summary of the invention
In order to overcome the above deficiency, the present invention provides a kind of cleaning methods of SiC panel surface AlN film layer, effectively solve
The technical issues of SiC panel surface AlN film layer cannot be cleared up effectively in the prior art.
Technical solution provided by the invention includes:
A kind of cleaning method of SiC panel surface AlN film layer, comprising:
There is the SiC disk of AlN film layer to be put into alkaline cleaning fluid sputtering to impregnate；
SiC disk after immersion is put into warm water tank and is impregnated；
By the SiC disk warm water washing after immersion；
SiC disk after flushing is put into baking oven and is toasted, the cleaning to SiC panel surface AlN film layer is completed.
The alkaline cleaning fluid is mixed by KOH (potassium hydroxide) and deionized water, or by NaOH (sodium hydroxide) and
Deionized water mixes, and mass ratio is 0.2~0.35.
It is impregnated it is further preferred that thering is the SiC disk of AlN film layer to be put into alkaline cleaning fluid sputtering, specifically: it will sputter
There is the SiC disk of AlN film layer to be put into alkaline cleaning fluid and impregnate 5~40min (minute), the temperature range of the alkaline cleaning fluid is
100~150 DEG C (degree Celsius).
It is impregnated it is further preferred that the SiC disk after immersion is put into warm water tank, specifically: the SiC disk after immersion is put
Enter 5~60min of immersion in warm water tank, the temperature range of warm water is 30~80 DEG C in warm water tank.
It is further preferred that by the SiC disk warm water washing after immersion, specifically: the SiC disk after immersion is rushed with warm water
Wash 10~120min.
It is toasted it is further preferred that the SiC disk after flushing is put into baking oven, specifically: the SiC disk after flushing is put into
In baking oven, under conditions of temperature range is 100~200 DEG C, 30~180min is toasted.
The cleaning method of SiC panel surface AlN film layer provided by the invention can effectively remove SiC panel surface AlN film layer
SiC disk will not be damaged simultaneously, effectively solves the technical issues of SiC panel surface AlN film layer cannot be cleared up effectively in the prior art.
Detailed description of the invention
Fig. 1 is the cleaning method flow diagram of SiC panel surface AlN film layer in the present invention.
Specific embodiment
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, Detailed description of the invention will be compareed below
A specific embodiment of the invention.It should be evident that drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing, and obtain other embodiments.
It is as shown in Figure 1 the cleaning method flow diagram of SiC panel surface AlN film layer provided by the invention, in the cleaning
Include: in method
Sputtering is had the SiC disk of AlN film layer to be put into alkaline cleaning fluid to impregnate by S1.Specifically, the alkaline cleaning fluid is by quality
Than for 0.2~0.35 KOH and deionized water mix, or by mass ratio be 0.2~0.35 NaOH and deionized water mix
It closes.In the process of cleaning, the SiC disk that sputtering has AlN film layer is put into 5~40min of immersion in alkaline cleaning fluid, alkalinity is clear
The temperature range of washing lotion is 100~150 DEG C.
SiC disk after immersion is put into warm water tank by S2 to be impregnated.Specifically, the SiC disk after immersion is put into warm water tank and is soaked
5~60min is steeped, the temperature range of warm water is 30~80 DEG C in warm water tank
S3 is by the SiC disk warm water washing after immersion.Specifically, by SiC disk 10~120min of warm water washing after immersion.
SiC disk after flushing is put into baking oven and toasts by S4, completes the cleaning to SiC panel surface AlN film layer.Specifically, will
SiC disk after flushing is put into baking oven, under conditions of temperature range is 100~200 DEG C, toasts 30~180min.
Embodiment 1:
1. the SiC disk for having sputtered AlN film layer is soaked into the alkali that mass ratio is 0.4 (mass ratio of KOH and deionized water)
30min in property cleaning solution, 100 DEG C of temperature；
2. taking out SiC disk, it is put into 60 DEG C of warm water tank, impregnates 30min；
3. taking out SiC disk, it is put into room temperature sink, rinses 1h (hour)；
4. taking out SiC disk, it is put into 150 DEG C of baking ovens, toasts 2h；
5. taking out SiC disk, it is put into spare in nitrogen cabinet.
In this example, the SiC disk appearance after cleaning is clean, with normal disk indifference.
Embodiment 2:
1. the SiC disk for having sputtered AlN film layer is soaked into the alkali that mass ratio is 0.3 (mass ratio of KOH and deionized water)
10min in property cleaning solution, 140 DEG C of temperature；
2. taking out SiC disk, it is put into 60 DEG C in warm water tank, impregnates 30min；
3. taking out SiC disk, it is put into room temperature sink, rinses 1h；
4. taking out SiC disk, it is put into 150 DEG C of baking ovens, toasts 2h；
5. taking out SiC disk, it is put into spare in nitrogen cabinet.
In this example, the SiC disk appearance after cleaning is clean, with normal disk indifference.
It should be noted that above-described embodiment can be freely combined as needed.The above is only of the invention preferred
Embodiment, it is noted that for those skilled in the art, in the premise for not departing from the principle of the invention
Under, several improvements and modifications can also be made, these modifications and embellishments should also be considered as the scope of protection of the present invention.
Claims (6)
1. a kind of cleaning method of SiC panel surface AlN film layer characterized by comprising
There is the SiC disk of AlN film layer to be put into alkaline cleaning fluid sputtering to impregnate；
SiC disk after immersion is put into warm water tank and is impregnated；
By the SiC disk warm water washing after immersion；
SiC disk after flushing is put into baking oven and is toasted, the cleaning to SiC panel surface AlN film layer is completed.
2. cleaning method as described in claim 1, which is characterized in that the alkaline cleaning fluid is mixed by KOH and deionized water
It forms, or is mixed by NaOH and deionized water, mass ratio is 0.2~0.35.
3. cleaning method as claimed in claim 1 or 2, which is characterized in that there is the SiC disk of AlN film layer to be put into alkalinity sputtering
It is impregnated in cleaning solution, specifically: the SiC disk that sputtering has AlN film layer is put into 5~40min of immersion, the alkali in alkaline cleaning fluid
Property cleaning solution temperature range be 100~150 DEG C.
4. cleaning method as described in claim 1, which is characterized in that the SiC disk after immersion is put into warm water tank and is impregnated, is had
Body are as follows: the SiC disk after immersion is put into 5~60min of immersion in warm water tank, the temperature range of warm water is 30~80 in warm water tank
℃。
5. cleaning method as described in claim 1, which is characterized in that by the SiC disk warm water washing after immersion, specifically:
By SiC disk 10~120min of warm water washing after immersion.
6. cleaning method as described in claim 1, which is characterized in that the SiC disk after flushing is put into baking oven and is toasted, specifically
Are as follows: the SiC disk after flushing is put into baking oven, under conditions of temperature range is 100~200 DEG C, toasts 30~180min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811633428.4A CN109848122A (en) | 2018-12-29 | 2018-12-29 | The cleaning method of SiC panel surface AlN film layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811633428.4A CN109848122A (en) | 2018-12-29 | 2018-12-29 | The cleaning method of SiC panel surface AlN film layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109848122A true CN109848122A (en) | 2019-06-07 |
Family
ID=66893246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811633428.4A Pending CN109848122A (en) | 2018-12-29 | 2018-12-29 | The cleaning method of SiC panel surface AlN film layer |
Country Status (1)
| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110246942A (en) * | 2019-06-14 | 2019-09-17 | 佛山市国星半导体技术有限公司 | A kind of epitaxial structure of high-crystal quality |
| CN113122928A (en) * | 2021-04-19 | 2021-07-16 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Seed crystal treatment method for reducing oxygen impurities and defects in aluminum nitride single crystal |
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| JP2006019488A (en) * | 2004-07-01 | 2006-01-19 | Sumitomo Electric Ind Ltd | AlN SUBSTRATE AND CLEANING METHOD THEREFOR |
| CN1947869A (en) * | 2006-05-12 | 2007-04-18 | 浙江昱辉阳光能源有限公司 | Method for cleaning silicon material |
| CN101979160A (en) * | 2010-05-21 | 2011-02-23 | 北京天科合达蓝光半导体有限公司 | Method for cleaning pollutants on surface of silicon carbide wafer |
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| CN108655089A (en) * | 2018-03-27 | 2018-10-16 | 上海申和热磁电子有限公司 | The cleaning minimizing technology of 12 inches of monocrystalline silicon tray surface aluminium nitride films of semiconductor |
| CN108687029A (en) * | 2018-05-21 | 2018-10-23 | 新疆晶科能源有限公司 | A kind of cleaning of silicon material |
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2018
- 2018-12-29 CN CN201811633428.4A patent/CN109848122A/en active Pending
Patent Citations (10)
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|---|---|---|---|---|
| JP2006019488A (en) * | 2004-07-01 | 2006-01-19 | Sumitomo Electric Ind Ltd | AlN SUBSTRATE AND CLEANING METHOD THEREFOR |
| CN1947869A (en) * | 2006-05-12 | 2007-04-18 | 浙江昱辉阳光能源有限公司 | Method for cleaning silicon material |
| CN101979160A (en) * | 2010-05-21 | 2011-02-23 | 北京天科合达蓝光半导体有限公司 | Method for cleaning pollutants on surface of silicon carbide wafer |
| CN102921665A (en) * | 2012-09-27 | 2013-02-13 | 英利能源（中国）有限公司 | Cleaning solution and cleaning method for silicon nitride film on surface of silicon chip |
| CN104307781A (en) * | 2014-08-27 | 2015-01-28 | 富乐德科技发展（天津）有限公司 | Cleaning method for removing oxide film attached to surface of ceramic part |
| CN104445206A (en) * | 2014-10-09 | 2015-03-25 | 浙江大学 | Method for cleaning silicon nitride on surface of silicon block |
| CN104599952A (en) * | 2015-01-22 | 2015-05-06 | 中国科学院半导体研究所 | Method for removing etch damage layer formed in etching of silicon carbide plasma |
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| CN108655089A (en) * | 2018-03-27 | 2018-10-16 | 上海申和热磁电子有限公司 | The cleaning minimizing technology of 12 inches of monocrystalline silicon tray surface aluminium nitride films of semiconductor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110246942A (en) * | 2019-06-14 | 2019-09-17 | 佛山市国星半导体技术有限公司 | A kind of epitaxial structure of high-crystal quality |
| CN113122928A (en) * | 2021-04-19 | 2021-07-16 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Seed crystal treatment method for reducing oxygen impurities and defects in aluminum nitride single crystal |
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| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Applicant after: Jingneng optoelectronics Co.,Ltd. Address before: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Applicant before: LATTICE POWER (JIANGXI) Corp. |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190607 |
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| RJ01 | Rejection of invention patent application after publication |