CN109844170A - For cleaning the system of vacuum chamber, the method for cleaning vacuum chamber and the purposes of the compressor for cleaning vacuum chamber - Google Patents
For cleaning the system of vacuum chamber, the method for cleaning vacuum chamber and the purposes of the compressor for cleaning vacuum chamber Download PDFInfo
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- CN109844170A CN109844170A CN201780038862.5A CN201780038862A CN109844170A CN 109844170 A CN109844170 A CN 109844170A CN 201780038862 A CN201780038862 A CN 201780038862A CN 109844170 A CN109844170 A CN 109844170A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
- B08B9/027—Cleaning the internal surfaces; Removal of blockages
- B08B9/032—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing
- B08B9/0321—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing using pressurised, pulsating or purging fluid
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
- B08B9/027—Cleaning the internal surfaces; Removal of blockages
- B08B9/032—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing
- B08B9/0321—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing using pressurised, pulsating or purging fluid
- B08B9/0328—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing using pressurised, pulsating or purging fluid by purging the pipe with a gas or a mixture of gas and liquid
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- General Chemical & Material Sciences (AREA)
- Epidemiology (AREA)
- Cleaning In General (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
This disclosure relates to a kind of system for cleaning vacuum chamber.The system comprises vacuum chambers and compressor.Vacuum chamber includes an inlet and an outlet.Compressor includes the entrance side for being connected to outlet and the outlet side for being connected to entrance.
Description
Technical field
Embodiment is related to cleaning vacuum chamber by heating and especially by the gas of heat.Embodiment is related to
For cleaning making for the system of vacuum chamber, the method for cleaning vacuum chamber and the compressor for cleaning vacuum chamber
With.
Background technique
Coating material can be used in several applications and in several technical fields.For example, coating material can be used
In the field of microelectronics, such as, for generating semiconductor device.Moreover, the substrate for display can be by coating.Separately
Outer application includes insulating panel, organic light emission (OLED) plate, the substrate with thin film transistor (TFT) (TFT), colour filter or the like.
Technology for the layer deposition on substrate includes such as thermal evaporation, chemical vapor deposition (CVD) and physical vapor
It deposits (PVD), such as sputtering sedimentation.
A factor for influencing sedimentary quality is the quality and the indoor pollution of vacuum chamber of the vacuum in vacuum chamber.
Processing, manufacture, transfer, transport, storage and assembling chamber are very sensitive to polluting.The phase interaction of people and the inner surface of these chambers
With often introducing the hydrocarbon HC pollutant adsorbed by chamber surfaces.Hydrocarbon pollutes the service life that can greatly shorten process units.Therefore,
All surface inside vacuum chamber requires intensively to clean, for example, to realize ultra-clean vacuum (UCV) and avoid pollution.
Human operator is very time-consuming to the wet cleaning of interior surface and large labor intensity.In addition, human operator
New HC pollutant may be brought into system, and possibly can not effectively reach many surfaces.Moreover, cleaning can energy loss
Component inside bad vacuum chamber, that is, sensor, electronic component etc..
Pervious vacuum chamber clean method further includes plasma source processing.However, plasma source clean efficiency with
Reduced at a distance from plasma source entry position.In addition, the reactive plasma gas of such as ozone is excessively used
The internal part of chamber, such as sealing element may be damaged.
In view of the foregoing, the method for cleaning the improvement system of vacuum chamber and for cleaning vacuum chamber is beneficial
's.
Summary of the invention
In view of above, a kind of system for cleaning vacuum chamber, method and use for cleaning vacuum chamber are provided
In the purposes of the compressor of cleaning vacuum.Other aspects, advantage and the feature of the disclosure it is aobvious from claim, description and attached drawing and
It is clear to.
According to the one side of the disclosure, a kind of system for cleaning vacuum chamber is provided.The system comprises vacuum chambers
Room and compressor.Vacuum chamber includes an inlet and an outlet.Compressor includes being connected to the entrance side of outlet and being connected to entrance
Outlet side.
According to another aspect of the present disclosure, a kind of method for cleaning vacuum chamber is provided.The method includes compressions
Purification gas.In addition, the method includes the purification gas by compression come heating, vacuum chamber.
According to another aspect of the present disclosure, a kind of purposes of the compressor for cleaning vacuum chamber is provided.The purposes
Generally include using compressor for cleaning vacuum chamber, the compressor be selected from by contactless compressor, oilless (oil free) compressor,
Group composed by without grease compressor, magnetic drive compressor, magnetic suspension bearing compressor and above-mentioned compressor any combination.
Detailed description of the invention
Therefore, the mode of features described above can be understood in detail, can be obtained by reference to embodiment general briefly above
The disclosure stated is discussed in greater detail.Attached drawing is related to embodiment of the present disclosure and is described below.
Fig. 1 shows the system including vacuum chamber and compressor according to embodiment as described herein.
Fig. 2 is shown is including vacuum chamber, compressor and pressure increasing unit according to embodiment as described herein
System.
Fig. 3 show according to embodiment as described herein include vacuum chamber, compressor and pumping unit system
Schematic diagram.
Fig. 4 shows that according to embodiment as described herein include that vacuum chamber, compressor, pumping unit and pressure adjust
The schematic diagram of the system of unit.
Fig. 5 A shows that according to embodiment as described herein include vacuum chamber, compressor and remote plasma source
The schematic diagram of system.
Fig. 5 B show according to embodiment as described herein include vacuum chamber, compressor, remote plasma source and
The schematic diagram of the system in internal plasma source.
Fig. 6 shows the flow chart of the method for cleaning vacuum chamber according to embodiment as described herein.
Fig. 7 shows the flow chart of the method for cleaning vacuum chamber according to embodiment as described herein.
Specific embodiment
With detailed reference to various embodiments, illustrate wherein one or more examples in each figure.Each example is
It is provided, and is not intended to limit in a manner of explanation.For example, a part as an embodiment is illustrated or retouches
The feature stated can be used in any other embodiment or is used in combination with any other embodiment, to generate another reality
Apply mode.The disclosure is intended to include these modifications and variations.
Interior in being described below for all figures, same reference numbers refer to same or like component.Generally, only description is opposite
In the difference of independent embodiment.Unless otherwise stated, otherwise the description of the part in an embodiment or aspect is also suitable
Corresponding part or aspect in another embodiment.
It in the disclosure, is the component of one or more gas connections by system understanding, for example, closed system.
It illustratively shows as shown in figure 1, system 100 may include vacuum chamber 110.In the disclosure, by vacuum chamber
It is interpreted as the recipient of substrate.For example, vacuum chamber can be configured to manufacture, processing, transfer, transport, storage or assembling substrates,
Such as the large-area substrates of display manufacturing, for example, being used for OLED display.For cleaning the system configuration of vacuum chamber
At pollutant is removed from vacuum chamber, for example, from the indoor interior surface of vacuum chamber.For example, for cleaning vacuum chamber
System can stimulate the desorption of the material on the indoor inner surface of vacuum chamber.
Embodiment as described herein can remove the vacuum in the device and vacuum chamber that may be manufactured in influence system
Quality improper pollutant.For example, these pollutants can be selected from the group being combined by hydrocarbon, water and above-mentioned substance group.
In the disclosure, hydrocarbon can be the organic compound being generally made of hydrogen and carbon atom.For example, hydrocarbon may include virtue
Object is closed in hydrocarbon, alkane, alkene, cycloalkane and alkynylation.It is some according to that can be combined with other embodiment disclosed herein
Embodiment, caused by hydrocarbon can be the mankind.For example, human skin may include steroid precursor squalene, triterpene.In addition,
Human skin can easily contact and adsorbed hydrocarbons.For example, human skin can adsorb petroleum derivative, such as gasoline, foaming
Glue, paint, laundry detergent, lubricating oil, shampoo, preservative and cosmetics.
It illustratively shows as shown in figure 1, vacuum chamber can have entrance 111 and outlet 112.According to some embodiment party
Formula, entrance may be located remotely from outlet arrangement.Therefore, it is provided in vacuum chamber by entrance and is removed by outlet from vacuum chamber
Gas by vacuum chamber or vacuum chamber at least part.For example, entrance can be opposite with the outlet in vacuum chamber
Arrangement.Vacuum chamber may include the first wall and second wall opposite with the first wall.First wall and the second wall can be the first side
Wall and second sidewall or the first wall can be roof and the second wall can be bottom wall.Entrance can be set at the first wall
And exporting can be set at the second opposite wall.Advantageously, entering before vacuum chamber is left in exit in inlet
Gas have passed through the major part of chamber.
In addition, illustratively showing as shown in figure 1, system 100 may include compressor 120.Compressor can have entrance side
121 and outlet side 122.Entrance side 121 may be coupled to the outlet 112 of vacuum chamber 110 and outlet side 122 may be coupled to
The entrance 111 of vacuum chamber.The outlet 112 of suction port of compressor side 121 and vacuum chamber 110 is in fluid communication, for example, passing through first
Conduit 131.The entrance 111 of compressor outlet side 122 and vacuum chamber 110 is in fluid communication, for example, passing through the second conduit 132.It can
To provide gas circulation with the conduit for being connected to vacuum chamber by compressor.
According to embodiment as described herein, vacuum chamber is the vacuum chamber for display manufacturing.Vacuum chamber tool
There is size, so that there is at least GEN4 in vacuum chamber, the especially at least substrate of the size of GEN7.5.In addition, true
Plenum chamber can be configured for vertical substrate transport and/or vertical substrate orientation.Vertical substrate orientation leads to length, width
And/or the ratio of height, it is beneficial for carrying out cleaning for the purification gas of ratio compression.
Compressor can pressure in increase system, for example, in the second conduit.Compressor can be gas compressor.
For example, compressor can in increase system gas pressure.In closed system, compressor can increase the temperature of gas.Pressure
Contracting machine can convey gas and pass through system.For example, compressor can convey the gas of heat in vacuum chamber.
The system for cleaning vacuum chamber can be provided, the system is able to carry out the side for cleaning vacuum chamber
Method.The purposes of compressor for cleaning vacuum chamber can be provided.According to embodiment as described herein, provide for cleaning
The system of vacuum chamber.System includes having the vacuum chamber of entrance 111 and outlet 112 and exporting 112 with being connected to
The compressor 120 of entrance side 121 and the outlet side 122 for being connected to entrance 111.Compressor increases the gas in a part of system
Pressure.The pressure of increase leads to the heating to gas.The gas of heat is guided through vacuum chamber.The gas of heat is from inside
And/or the component in vacuum chamber carrys out the wall of heating, vacuum chamber.The wall of vacuum chamber and/or the height of the component in vacuum chamber
The desorption of temperature stimulation pollutant.Cleaning can be provided.
According to the embodiment that can be combined with any other embodiment disclosed herein, compressor can be configured to compress
Purification gas in vacuum chamber.Purification gas can be the gas in the region of cleaning systems.For example, pure gas, multiple gases
Mixture, dry gas or multiple gases drying composite can be used as purification gas.Purification gas can be stimulated and is deposited on
The desorption of material in vacuum chamber, particularly in view of the high temperature introduced by compressor.For example, according to disclosed herein one
A little embodiments, purification gas can on the inner surface for being deposited on vacuum chamber hydrocarbon or water phase interaction.In the disclosure,
Purification gas can be selected from by dry air, nitrogen N2, argon Ar, oxygen O2、O2/N2、O2/ dry air, ozone O3, active oxygen object
Group composed by matter ROS and above-mentioned substance any combination.Specifically, purification gas may include O2.For example, according to this paper institute
Disclosed some embodiments, compressor can be configured to compression O2.In addition, according to can be with any other implementation disclosed herein
The embodiment that mode combines, purification gas can change during processing.For example, in the disclosure, compressor can configure
At compression O2And N2Or O2And dry air is as alternate purification gas.In addition, purification gas can be O3Or ROS, O3Or
ROS can be generated for example by using short wavelength UV UV-C light source, such as UV-C LED light.
In the disclosure, dry gas is interpreted as the air with low water vapour.For example, according to some embodiments,
Dry air can have the relative humidity lower than 10%, i.e. steam partial pressure and water under given temperature and pressure in systems
The percentage of equilibrium vapour pressure is lower than 10%.
In order to reduce the pollution in vacuum chamber, other than the cleaning of purification gas, alternatively or in addition, the dress utilized
The cleaning set is beneficial.The compressor 120 illustratively shown in Fig. 1 can be without grease and/or oilless (oil free) compressor.?
The gas compressed under pressure cannot be mixed with grease or oil, this may introduce further pollution.In addition, the bearing of compressor or
Driver can be it is contactless, i.e., the moving component of compressor not with other compressor part Mechanical Contacts.Specifically,
Compressor can have suspension magnetic suspension driving and/or magnetic suspension bearing.Contactless moving component reduces to oily or grease
Demand, and the generation of particle can be further reduced by mechanical friction.
According to the embodiment as described herein that can be combined with other embodiment as described herein, compressor be selected from by
Contactless compressor, oilless (oil free) compressor, without grease compressor, magnetic drive compressor, magnetic suspension bearing compressor and above-mentioned pressure
Group composed by contracting machine any combination.
According to some embodiments that can be combined with any other embodiment disclosed herein, compressor can have about 15
Kilowatt to about 20 kilowatts of electrical power, such as about 17 kilowatts.In addition, compressor can have about 5kW to about 10 kilowatts effective plus
Thermal power, such as about 7 kilowatts to about 8 kilowatts.In the disclosure, compressor can have about 5000 cubes ms/h of nominal pump
Send speed.In addition, compressor is in about 150 millibars of (1.5*104Pa) pressure under can have about 400 hertz to about 600 hertz
Frequency, such as about 550 hertz.For example, compressor can be turbo-blower.
According to some embodiments that can be combined with any other embodiment disclosed herein, for cleaning vacuum chamber
System may include the vacuum chamber with entrance and exit；And have be connected to outlet entrance side and be connected to entrance
The compressor of outlet side.As illustratively shown in Fig. 2, according to some embodiments, system 200 be may further include such as
Pressure increasing unit, conduit 132 and/or the air door 230 of pipeline.
In the disclosure, it is interpreted as the pressure increasing unit to be configured as air-flow providing the arrangement of resistance.In order to overcome this
Resistance, compressor 120 establish pressure in system 200.For example, in the disclosure, pressure increasing unit can be pipe-line system,
Such as, rigid conduit.In addition, pipeline can be by being thermally isolated.
As shown in FIG. 2, in the disclosure, pressure increasing unit can be air door 230.In the disclosure, it can incite somebody to action
Air door is interpreted as being configured to the arrangement of management fluid stream.For example, air door can be by shrinking or blocking come the gas in management system
Stream.As illustratively shown in Fig. 2, air door 230 can be arranged close to the entrance 111 of vacuum chamber 110.In addition, pressure increases
Unit can be selected from the group as composed by rigid conduit, air door and said combination.
In Fig. 1, compressor 120 is arranged between the first conduit 131 and the second conduit 132.Compressor 120 be set and
Closer to the outlet 112 of vacuum chamber 110.First conduit 131 is than the outlet side 122 and vacuum chamber 110 in compressor 120
The second conduit 132 between entrance 111 is short.The length of second conduit 132 (such as pipeline) provides the pressure increased.The pressure of increase
Power leads to the heating to purification gas.In Fig. 2, compared to Fig. 1, in the outlet side 122 and vacuum chamber 110 of compressor 120
Entrance 111 between the second conduit 132 it is shorter.Therefore it provides air door 230 is to adjust pressure.
As illustratively shown in Fig. 3, according to some implementations that can be combined with any other embodiment disclosed herein
Mode, the system 300 for cleaning vacuum chamber 110 may also include gas access 341, gas vent 342 and pumping unit
340.In the normal operation period, gas access 341, gas vent 342 and pumping unit 340, for example, vacuum pump, can be used to mention
For the processing gas in vacuum chamber.Processing gas can be the gas for handling substrate, for example, in deposition, etching or class
Like during processing.In order to clean the vacuum chamber according to embodiment of the present disclosure, gas access 341, gas vent 342 and pump
It send unit 340 to can be used to be inserted into purification gas, removes purification gas or replacement purification gas to be used for cleaning treatment.Therefore, may be used
To provide purge gas system.
In the disclosure, pumping unit, for example, vacuum pump, can be rotary pump, dry type screw pump, turbomolecular pump, expansion
Dissipate pump.Pumping unit also may include the combination of two or more pumps, for example, being different type.
As illustratively shown in Fig. 4, according to the embodiment that can be combined with any other embodiment disclosed herein,
System 400 for cleaning vacuum chamber 110 may further include pressure adjustment unit 450.For example, for cleaning vacuum chamber
The system of room may further include one or more pressure adjustment units 450.For example, in the disclosure, pressure adjustment unit
It can control the air-flow at the air-flow and/or gas vent 342 at gas access 341.Therefore, it can be pressed by one or more
Power adjustment unit controls the pressure in vacuum chamber.For example, in the disclosure, pressure adjustment unit can be air door, such as,
Adjustable air door.As illustratively shown in Fig. 4, pressure adjustment unit 450 can be arranged and close to purification gas entrance
341.In addition, as illustratively shown in Fig. 4, pressure adjustment unit 450 can it is arranged and close to purified gas outlet 342 or
Pumping unit 340.
As illustratively shown in Fig. 5 A and Fig. 5 B, according to the reality that can be combined with any other embodiment disclosed herein
Mode is applied, the system 500 for cleaning vacuum chamber 110 may further include plasma source 560.Plasma source configuration
At supplying energy, i.e., excited gas and generate plasma.For example, plasma source can be ultraviolet (UV) plasma source.
According to the embodiment that can be combined with other embodiment disclosed herein, plasma source can be it is long-range equal from
Daughter source.For example, plasma source may be located remotely from vacuum chamber and gaseous state is connected to vacuum chamber.Fig. 5 A show it is long-range equal from
Daughter source, the remote plasma source are fluidly connected with vacuum chamber 110.Alternatively or in addition, as illustratively opened up in Fig. 5 B
Show, remote plasma source also can be set at the conduit of the system for cleaning vacuum chamber.According to other examples, or
Or in addition, plasma source can be arranged in vacuum chamber.For example, plasma source can be in the indoor inside of vacuum chamber
Plasma source.
As described above, poor cleaning treatment may be only resulted in plasma source clean vacuum chamber, because of plasma
The cleaning efficiency of body reduces to increase component to be cleaned at a distance from plasma source.It is attributed to the atom of excitation and divides
Sub is compound, and the cleaning efficiency of plasma can be depleted.However, can provide and pass through according to embodiment as described herein
The clean combination of purified-gas compressor and plasma source.The purified-gas compressor cleaning of vacuum chamber can pass through benefit
It is further improved with plasma.In the disclosure, the system for cleaning vacuum chamber can also include illustratively opening up
Purge gas system (340,341,342) shown in Figure 3 and (several) for being illustratively showed in Fig. 5 A and Fig. 5 B etc. from
The combination in daughter source 560.
According to further embodiments, the source UV 570 can also be provided to stimulate wall part or vacuum chamber from vacuum chamber 110
The desorption of component in room.The source UV 570 can be set in vacuum chamber 110 or the electromagnetic radiation in the source UV can be directed to
Into vacuum chamber.
As illustratively shown in Fig. 6 and Fig. 7, according to the embodiment party that can be combined with other embodiment as described herein
Formula, a kind of method for cleaning vacuum chamber disclosed herein.For example, in the disclosure, for cleaning the side of vacuum chamber
Method includes compression purification gas (frame 610).In the disclosure, purification gas can will be compressed to be interpreted as increasing the pressure of purification gas
Power or the temperature for increasing purification gas.Reached with increasing pressure from about 100 millibars for example, purification gas can be compressed
(1.0*104Pa) to about 300 millibars of (3.0*104Pa) range in pressure, for example, about 150 millibars of (1.5*104Pa) pressure
Power.Furthermore it is possible to compress purification gas being increased to temperature in the range from about 100 DEG C to about 120 DEG C from about 20 DEG C
Temperature.For example, purification gas can be compressed by compressor, such as, magnetic suspension drives turbo-blower.
According to the embodiment that can be combined with other embodiment as described herein, for cleaning the method packet of vacuum chamber
Include the purification gas heating, vacuum chamber (frame 620) with compression.The purification gas of compression is to heating, vacuum chamber.For example, pressure
The purification gas of contracting can be used to for the inner surface of vacuum chamber being heated to the temperature in the range from about 50 DEG C to about 150 DEG C.
For example, the inner surface of vacuum chamber can be heated to the temperature in following range: from about 100 DEG C to about 150 DEG C, from about 100
DEG C to about 120 DEG C, from about 70 DEG C to about 120 DEG C, from about 70 DEG C to about 100 DEG C, or from about 50 DEG C to about 100 DEG C.In addition, pressure
The purification gas of contracting can be to the inner wall or component of heating, vacuum chamber.
According to embodiment, can for cleaning compression used in the method for vacuum chamber or hot purification gas
Stimulate the desorption for the material being deposited in vacuum chamber.For example, according to some embodiments disclosed herein, hot purified gas
Body can on the inner surface for being deposited on vacuum chamber hydrocarbon or water phase interaction.In the disclosure, hot purification gas is optional
Free dry air, N2、Ar、O2、O2/N2、O2/ dry air, O3, group composed by ROS and above-mentioned substance any combination.Specifically
For, purification gas may include O2.For example, according to some embodiments disclosed herein, hot purification gas be can be
O2.In addition, according to the embodiment that can be combined with any other embodiment disclosed herein, purification gas can change.Example
Such as, in the disclosure, in the method for cleaning vacuum chamber, O can be used2And N2Or O2It is primary with dry air
Or it is repeated several times and is used as alternate thermal purification gas.It therefore would be advantageous to which pollution at the inner surface of vacuum chamber can be down to
Partially by the purification gas desorption of heat.
As illustratively shown in Fig. 7, the method for cleaning vacuum chamber includes that compression purification gas (frame 710) is used in combination
The purification gas of compression comes heating, vacuum chamber (frame 720).According to the implementation that can be combined with other embodiment as described herein
Mode, the method for cleaning vacuum chamber, which may also include, at least partly removes compression or hot purified gas from vacuum chamber
Body (frame 730).It therefore would be advantageous to which the material from the inner surface desorption of vacuum chamber can be at least partly from vacuum chamber
Room removes.
As illustratively shown in Fig. 7, according to the embodiment that can be combined with other embodiment as described herein, it is used for
The method of cleaning vacuum chamber, which may additionally include, introduces clean purification gas in vacuum chamber, while keeping in vacuum chamber about
100 millibars of (1.0*104Pa) to about 300 millibars of (3.0*104Pa) thermal purification pressure (frame 740).
In the disclosure, thermal purification pressure being interpreted as compressing in the system for being used to clean vacuum chamber or hot
Purification gas pressure.For example, thermal purification pressure may remain in following range: from about 100 millibars of (1.0*104Pa) extremely
About 300 millibars of (3.0*104Pa), from about 100 millibars of (1.0*104Pa) to about 150 millibars of (1.5*104Pa), from about 150 millibars
(1.5*104Pa) to about 200 millibars of (2.0*104Pa), from about 180 millibars of (1.8*104Pa) to about 240 millibars of (2.4*104
Pa), from about 190 millibars of (1.9*104Pa) to about 200 millibars of (2.0*104Pa), or in about 150 millibars of (1.5*104Pa) under.
According to some embodiments, clean purification gas be can be selected from by dry air, N2、Ar、O2、O2/N2、O2/ dry
Air, O3, group composed by ROS and above-mentioned substance any combination.Specifically, clean purification gas can be O2、N2Or
Dry air, such as, O2。
As illustratively shown in Fig. 7, according to the embodiment that can be combined with other embodiment as described herein, it is used for
The method of cleaning vacuum chamber, which may additionally include, introduces plasma in vacuum chamber, the plasma is selected from by ozone O3Deng
Gas ions, reactive oxygen species ROS plasma and above-mentioned substance combine composed group.In the disclosure, ROS is interpreted as containing
Aerobic active chemistry.For example, ROS can be peroxide, superoxides, hydroxyl radical free radical or singlet oxygen.According to
The some embodiments that can be combined with any other embodiment disclosed herein, can be at about 0.1 millibar (10 pa) to about 1 milli
Plasma is introduced into vacuum chamber under the plasma treatment pressure of bar (100 pa).
In the disclosure, plasma treatment pressure can be interpreted as the system for being used to clean vacuum chamber it is medium from
The pressure of daughter.For example, plasma treatment pressure may remain in following range: from about 0.5 millibar (50 pa) to about 0.9
Millibar (90 pa), from about 0.1 millibar (10 pa) to about 0.5 millibar (50 pa), or from about 0.5 millibar (50 pa) to about 1 millibar
(100 pa).
According to the embodiment that can be combined with other embodiment as described herein, can successively or it is alternately primary or
Multiple thermal purification processing (box 740) or one or many plasma sources processing (box 750) or both.For example,
Thermal purification processing (frame 740) can be followed by plasma source processing (frame 750), or vice versa.
In addition, purification gas or plasma can change according to some embodiments.For example, purification gas can be
O2With N2Between or in O2Between dry air or in O2With O3Or between ROS alternately, while by the heat in vacuum chamber
Purification pressure is maintained at about 100 millibars of (1.0*104Pa) to about 300 millibars of (3.0*104Pa), about 100 millibars of (1.0*104Pa)
To about 150 millibars of (1.5*104Pa), about 150 millibars of (1.5*104Pa) to about 200 millibars of (2.0*104Pa), such as, about 150 millis
Bar (1.5*104Pa), about 200 millibars of (2.0*104Pa), or about 240 millibars of (2.4*104Pa).In addition, for example, plasma can
In O3Replace between ROS, while the plasma treatment pressure in vacuum chamber is maintained at about 0.1 millibar (10 pa) extremely
About 1 millibar (100 pa), such as, about 0.1 millibar (10 pa) or about 1 millibar (100 pa).
In the disclosure, the method for cleaning vacuum chamber may also include the pressure reduced in vacuum chamber.For example, institute
The method of stating may include that the pressure in vacuum chamber is reduced in about 1.0*10-7Millibar (1.0*10-5Pa) to about 1.0*10-6In the least
Bar (1.0*10-4Pa) range in value.Specifically, the method for cleaning vacuum chamber may include initial or finally will be true
Pressure in plenum chamber is decreased below about 1.0*10-6Millibar (1.0*10-4Pa).Purification gas for feed-in heat passes through true
The pressure of plenum chamber is reduced, purification gas insertion and purification gas heating can be provided with several circulations, for example, twice or more
More than repeatedly, such as, five times or more times or more.
According to some embodiments that can be combined with other embodiment as described herein, for cleaning the side of vacuum chamber
Method can be executed in the case where prosthetic interacts.The introducing of new hydrocarbon can be reduced.According to can with it is as described herein other
The embodiment of embodiment combination, it is disclosed herein for cleaning the purposes of the compressor of vacuum chamber.
Although, can be in the case where not departing from the basic categories of the disclosure described previously for embodiment of the present disclosure
Other and other embodiments of the disclosure are designed, and the scope of the disclosure is determined by the claims that follow.
It specifically says, this written description discloses the disclosure, including optimal mode using example, and also makes this field skill
Art personnel can practice described theme, including production and using any device or system and execute any side being incorporated to
Method.Although having been discovered that various specific embodiments above, the mutual nonexcludability feature of above embodiment
It can be combined with each other.The scope of the patents can be defined by the claims, and if claim has the literal language with claim
Say different structural elements, or if claim includes the equivalent structure with the literal language of claim without essential difference
Element, then other examples are intended within the scope of the claims.
Claims (17)
1. one kind is used to clean the system (100,200,300,400,500) of vacuum chamber (110), the system comprises:
The vacuum chamber has entrance (111) and outlet (112)；With
Compressor (120) has the entrance side (121) for being connected to the outlet (112) and is connected to going out for the entrance (111)
Mouth side (122).
2. the system as claimed in claim 1, the system further comprises pressure increasing unit (230).
3. system as claimed in claim 2, the pressure increasing unit is selected from by rigid conduit, air door and said combination institute
The group of composition.
4. system as described in any one of the preceding claims, the system further comprises purification gas entrance (341), net
Change gas vent (342) and pumping unit (340).
5. system as described in any one of the preceding claims, the system further comprises pressure adjustment unit (450).
6. system as described in any one of the preceding claims, the system further comprises plasma source (560).
7. system as described in any one of the preceding claims, the system is configured to stimulate indoor in the vacuum chamber
The desorption of material on surface.
8. system as claimed in claim 7, the material is to be selected to combine composed group by hydrocarbon, water and above-mentioned substance.
9. system as described in any one of the preceding claims, the compressor is selected from by contactless compressor, without oil pressure
Composed by contracting machine, without grease compressor, magnetic drive compressor, magnetic suspension bearing compressor and above-mentioned compressor any combination
Group.
10. system as described in any one of the preceding claims, the compressor has 15 kilowatts to 20 kilowatts of electrical power
And/or 5 kilowatts to 10 kilowatts of effective heating power.
11. system as described in any one of the preceding claims, the compressor is configured to compress in the vacuum chamber
Purification gas, the purification gas is selected from by dry air, N2、Ar、O2、O2/N2、O2/ dry air, O3, ROS and above-mentioned
Group composed by any combination of substance.
12. a kind of method for cleaning vacuum chamber, which comprises
Compress purification gas；With
The vacuum chamber is heated by the purification gas of compression.
13. method as claimed in claim 12, the method further includes:
The purification gas of compression is at least partly removed from the vacuum chamber；With
Clean purification gas is introduced into the vacuum chamber and keeps 100 millibars of (1.0*10 in the vacuum chamber simultaneously4
Pa) to 300 (3.0*104Pa) purification pressure.
14. method described in any one of claim 12 to 13, the method further includes:
In the vacuum chamber for 0.1 millibar (10 pa) to 1 millibar (100 pa) plasma treatment pressure under will selected from by
O3, ROS and above-mentioned substance combination composed by organize plasma be introduced into the vacuum chamber.
15. the method as described in any one of claim 12 to 14, the purification gas and the clean purification gas are
It is individually selected from by dry air, N2、Ar、O2、O2/N2、O2/ dry air, O3, ROS and above-mentioned substance any combination formed
Group.
16. a kind of purposes for the compressor for cleaning vacuum chamber.
17. purposes as claimed in claim 16, wherein the compressor be selected from by contactless compressor, oilless (oil free) compressor,
Without grease compressor, magnetic drive compressor, magnetic suspension bearing compressor and above-mentioned compressor any combination composed by group.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2017/074205 WO2019057310A1 (en) | 2017-09-25 | 2017-09-25 | System for cleaning a vacuum chamber, method for cleaning a vacuum chamber and use of a compressor for cleaning a vacuum chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109844170A true CN109844170A (en) | 2019-06-04 |
Family
ID=60083922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780038862.5A Pending CN109844170A (en) | 2017-09-25 | 2017-09-25 | For cleaning the system of vacuum chamber, the method for cleaning vacuum chamber and the purposes of the compressor for cleaning vacuum chamber |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2020500412A (en) |
| KR (1) | KR20190036508A (en) |
| CN (1) | CN109844170A (en) |
| TW (1) | TW201923128A (en) |
| WO (1) | WO2019057310A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11854773B2 (en) | 2020-03-31 | 2023-12-26 | Applied Materials, Inc. | Remote plasma cleaning of chambers for electronics manufacturing systems |
| KR102649715B1 (en) * | 2020-10-30 | 2024-03-21 | 세메스 주식회사 | Surface treatment apparatus and surface treatment method |
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| EP1510595A1 (en) * | 2002-06-05 | 2005-03-02 | Mitsubishi Shoji Plastics Corporation | Method and device for cleaning raw material gas introduction tube used in cvd film forming apparatus |
| US20070254096A1 (en) * | 2003-12-11 | 2007-11-01 | Wiessner Gmbh | Apparatus and Method for Cleaning at Least One Process Chamber for Coating at Least One Substrate |
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| JP5554469B2 (en) * | 2007-05-14 | 2014-07-23 | 東京エレクトロン株式会社 | Thin film forming apparatus cleaning method, thin film forming method, and thin film forming apparatus |
| JP5514129B2 (en) * | 2010-02-15 | 2014-06-04 | 東京エレクトロン株式会社 | Film forming method, film forming apparatus, and method of using film forming apparatus |
| CN104454989B (en) * | 2013-09-13 | 2017-03-29 | 珠海格力节能环保制冷技术研究中心有限公司 | Magnetic suspension bearing and centrifugal compressor |
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2017
- 2017-09-25 WO PCT/EP2017/074205 patent/WO2019057310A1/en active Application Filing
- 2017-09-25 JP JP2018550807A patent/JP2020500412A/en active Pending
- 2017-09-25 KR KR1020187029898A patent/KR20190036508A/en not_active Application Discontinuation
- 2017-09-25 CN CN201780038862.5A patent/CN109844170A/en active Pending
-
2018
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| US20070254096A1 (en) * | 2003-12-11 | 2007-11-01 | Wiessner Gmbh | Apparatus and Method for Cleaning at Least One Process Chamber for Coating at Least One Substrate |
| US20120037188A1 (en) * | 2010-08-13 | 2012-02-16 | Samsung Austin Semiconductor, Lp | Apparatus for agitating and evacuating byproduct dust from a semiconductor processing chamber |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2020500412A (en) | 2020-01-09 |
| KR20190036508A (en) | 2019-04-04 |
| TW201923128A (en) | 2019-06-16 |
| WO2019057310A1 (en) | 2019-03-28 |
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