CN109841688A - A kind of thin film transistor (TFT) and its manufacturing method - Google Patents
A kind of thin film transistor (TFT) and its manufacturing method Download PDFInfo
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Abstract
The present invention relates to thin-film transistor technologies fields, and disclose a kind of thin film transistor (TFT), including substrate, grid, gate dielectric layer, active layer, drain electrode, source electrode, etching barrier layer, passivation layer, substrate, crystal grid, lenticule and reflector plate, the grid is set to the middle position of substrate top.Setting of the present invention due to etching barrier layer and passivation layer, no matter can reach using dry etching or wet etching, oxide semiconductor active layer bring will be influenced by avoiding the occurrence of over etching step of the source electrode and drain electrode in direct patterning process, and then prevent from causing the effect of poor device properties, the present invention changes the light transmittance of substrate by crystal grid, oxide TFT device property is avoided under illumination condition by there is a phenomenon where degenerate, furthermore, in illumination, apparent negative sense drift will occur for the transfer characteristic of device under NBS, to improve the imaging effect of thin film transistor (TFT).
Description
Technical field
The present invention relates to thin-film transistor technologies field, specially a kind of thin film transistor (TFT) and its manufacturing method.
Background technique
Thin film transistor (TFT) is a kind of isolated-gate field effect transistor (IGFET).Its working condition can use Weimer characterization
Monocrystalline silicon MOSFET working principle describes.When grid imposes positive voltage, grid voltage generates electric field, power line in gate insulation layer
Semiconductor surface is directed toward by gate electrode, and generates charge inducing at surface, as gate voltage increases, semiconductor surface will be by consuming
Layer is changed into electron accumulation layer to the greatest extent, forms inversion layer, and when reaching strong inversion (when reaching cut-in voltage), voltage is added between leakage
Carrier is just had by channel, when source-drain voltage very little, conducting channel is approximately a constant resistance, and leakage current is with source and drain electricity
Pressure increases and linearly increases, and when source-drain voltage is very big, it can have an impact gate voltage, so that electric field is by source in gate insulation layer
Drain terminal is held gradually to weaken, electronics is gradually reduced by source to drain terminal in semiconductor surface inversion layer, and channel resistance is with source and drain
Voltage increases and increases, and leakage current increase becomes slowly, and corresponding linear zone is to saturation region transition, when source-drain voltage increases to certain journey
Degree, drain terminal inversion layer thickness are kept to zero, and voltage is increasing, and device enters saturation region, in practical LCD production, mainly utilize a-
The ON state (being greater than cut-in voltage) of Si:HTFT keeps the voltage of pixel capacitance using OFF state to pixel capacitance quick charge, from
And realize quick response and the unification well stored.
Thin film transistor (TFT) is the core devices of FPD, no matter AMLCD is shown or AMOLED is shown, each of which picture
Element is dependent on TFT and is switched and driven.However, the lower mobility of a-Si:HTFT (< 1cm2/Vs) is not able to satisfy the next generation
The driving requirement of FPD, and poly-Si TFT poor large-area uniformity makes what it was mainly directed towards that small size shows to answer
In.On the other hand, oxide TFT with its mobility higher (several ~ tens cm2/Vs), large-area uniformity preferably, preparation work
The more low many advantages of skill temperature are considered most possibly being applied in next-generation FPD.However, being realized in oxide TFT
It is faced emphatically during.
Summary of the invention
(1) the technical issues of solving
The present invention provides a kind of thin film transistor (TFT) and its manufacturing methods, no matter having reached using dry etching or wet process quarter
Erosion, having avoided the occurrence of over etching step of the source electrode and drain electrode in direct patterning process will be to oxide semiconductor active layer
Bring influences, and then prevents from causing the effect of poor device properties, meanwhile, the oxide TFT device property under illumination condition
It will degenerate, in addition, apparent negative sense drift will occur for device transfer characteristic under NBS in illumination.
(2) technical solution
The invention provides the following technical scheme: a kind of thin film transistor (TFT), including substrate, grid, gate dielectric layer, active layer, drain electrode,
Source electrode, etching barrier layer, passivation layer, substrate, crystal grid, lenticule and reflector plate, the grid are set to substrate top
Middle position, the gate dielectric layer and the two sides of substrate bottom and the top of grid are superimposed, the bottom of the active layer with
The top of gate dielectric layer is staggeredly superimposed, and the drain electrode and source electrode are located at the two sides at the top of active layer, the etch stopper
Layer be located at active layer at the top of middle position, and the two sides at the top of etching barrier layer respectively with drain electrode and source electrode opposite side bottom
Portion is superimposed, and the top formation package covering state of the passivation layer and drain electrode and source electrode, the substrate is located at substrate interior
Middle position, multiple crystal grids are located at the inside of substrate, and crystal grid is evenly distributed state, and three described micro-
Mirror is located at the right side of crystal grid, and the reflector plate is located at the left side of crystal grid.
Preferably, the substrate can be glass baseplate, quartz substrate and high-temperature flexible substrate.
Preferably, the vertical cross-section shape of the crystal grid is antiparallelogram, and the spacing between crystal grid is 30
To 60 μm.
Preferably, the cross sectional shape of the reflector plate can be rectangle or trapezoidal, and single reflector plate is micro- positioned at two
Adjacent opposite side between mirror, the spacing between two reflector plates is 24 to 32 μm, and the sky between two reflector plates
Gap is transmission region.
Another technical problem to be solved by the present invention is that providing a kind of manufacturing method of thin film transistor (TFT), including following step
It is rapid:
The preparation method of etching barrier layer
1) epoxy acrylate 1.32g, urethane acrylate 6g, methyl methacrylate 4g, butyl acrylate 6g and propylene
Sour hydroxyl ethyl ester 2g is put into glass container.
2) addition dehydrated alcohol is mixed, and mechanical stirring 5 minutes.
3) pressing plate is used, it is carried out to be preheated to 20-25 degrees Celsius, is uniformly coated by the uniform base-material of mechanical stirring to pressure
On plate, etch stopper layer film is made in natural cooling.
The preparation method of passivation layer
1) benzoin ethyl ether 3g, benzophenone 1g and triethanolamine 0.5g are put into container, dehydrated alcohol mechanical stirring 3 is added
Minute.
2) it by levelling agent 0.5g is added in container, is mixed using manual agitation mode, while being heated up to 25 degrees Celsius.
3) light sensitizer 1g is added, keeps agitation in a saturated state to its, passivation layer working fluid is made
Compared with prior art, the present invention provides a kind of thin film transistor (TFT) and its manufacturing method, have it is following the utility model has the advantages that
1, the present invention is carved no matter can reach using dry etching or wet process due to the setting of etching barrier layer and passivation layer
Erosion, avoiding the occurrence of over etching step of the source electrode and drain electrode in direct patterning process will be to oxide semiconductor active layer band
The influence come, and then prevent from causing the effect of poor device properties.
2, the present invention changes the light transmittance of substrate by crystal grid, avoids the oxide TFT device under illumination condition
Characteristic is by there is a phenomenon where degenerating, in addition, apparent negative sense drift will occur for the transfer characteristic of device under NBS in illumination, from
And improve the imaging effect of thin film transistor (TFT).
Detailed description of the invention
Fig. 1 is the schematic cross-section of structure of the invention thin film transistor (TFT)；
Fig. 2 is the schematic cross-section of structure of the invention thin film transistor (TFT) and passivation layer；
Fig. 3 is the schematic cross-section of structure of the invention thin film transistor (TFT) and substrate；
Fig. 4 is the schematic cross-section of structure of the invention crystal grid；
Fig. 5 is the schematic cross-section of structure of the invention crystal grid.
In figure: 1 substrate, 2 grids, 3 gate dielectric layers, 4 active layers, 5 drain electrodes, 6 source electrodes, 7 etching barrier layers, 8 passivation layers, 9
Substrate, 10 crystal grids, 11 lenticules, 12 reflector plates.
Specific embodiment
Below in conjunction with the embodiment of the present invention, technical solution in the embodiment of the present invention is clearly and completely retouched
It states, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on the present invention
In embodiment, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
As shown in Figs. 1-5, the present invention provides a kind of technical solution: a kind of thin film transistor (TFT), including substrate 1, grid 2, grid
Dielectric layer 3, active layer 4, drain electrode 5, source electrode 6, etching barrier layer 7, passivation layer 8, substrate 9, crystal grid 10, lenticule 11 and anti-
Piece 12 is penetrated, grid 2 is set to the middle position at 1 top of substrate, gate dielectric layer 3 and the two sides of 1 bottom of substrate and the top of grid 2
Portion is superimposed, and the bottom of active layer 4 is staggeredly superimposed with the top of gate dielectric layer 3, and drain electrode 5 and source electrode 6 are located at active layer 4
The two sides at top, etching barrier layer 7 are located at the middle position at the top of active layer 4, and the two sides at 7 top of etching barrier layer respectively with
The bottom of drain electrode 5 and 6 opposite side of source electrode is superimposed, the top formation package covering state of passivation layer 8 and drain electrode 5 and source electrode 6,
Substrate 9 is located at the middle position inside substrate 1, and multiple crystal grids 10 are located at the inside of substrate 9, and crystal grid 10 is in uniform
Distribution, three lenticules 11 are located at the right side of crystal grid 10, and reflector plate 12 is located at the left side of crystal grid 10.
Etching barrier layer 7 and passivation layer 8, the raw material including following parts by weight proportion: epoxy acrylate 1.32-
4.3g, urethane acrylate 6-7g, methyl methacrylate 4-8g, butyl acrylate 6-8g, hydroxy-ethyl acrylate 2-7g, peace
The fragrant ether 3-5g of breath, benzophenone 1-3g, triethanolamine 0.5-1g, levelling agent 0.5-1.5g and light sensitizer 1-2g, including with
Lower step:
The preparation method of etching barrier layer 7
1) epoxy acrylate 1.32g, urethane acrylate 6g, methyl methacrylate 4g, butyl acrylate 6g and propylene
Sour hydroxyl ethyl ester 2g is put into glass container.
2) addition dehydrated alcohol is mixed, and mechanical stirring 5 minutes.
3) pressing plate is used, it is carried out to be preheated to 20-25 degrees Celsius, is uniformly coated by the uniform base-material of mechanical stirring to pressure
On plate, etch stopper layer film is made in natural cooling.
The preparation method of passivation layer 8
1) benzoin ethyl ether 3g, benzophenone 1g and triethanolamine 0.5g are put into container, dehydrated alcohol mechanical stirring 3 is added
Minute.
2) it by levelling agent 0.5g is added in container, is mixed using manual agitation mode, while being heated up to 25 degrees Celsius.
3) light sensitizer 1g is added, keeps agitation in a saturated state to its, passivation layer working fluid is made.
Embodiment one:
A kind of thin film transistor (TFT), including substrate 1, grid 2, gate dielectric layer 3, active layer 4, drain electrode 5, source electrode 6, etching barrier layer 7,
Passivation layer 8, substrate 9, crystal grid 10, lenticule 11 and reflector plate 12, grid 2 are set to the middle position at 1 top of substrate, grid
Pole dielectric layer 3 and the two sides of 1 bottom of substrate and the top of grid 2 are superimposed, the bottom of active layer 4 and the top of gate dielectric layer 3
Portion is staggeredly superimposed, and drain electrode 5 and source electrode 6 are located at the two sides at the top of active layer 4, and etching barrier layer 7 is located at 4 top of active layer
Middle position, and the two sides at 7 top of etching barrier layer are superimposed with the bottom of drain electrode 5 and 6 opposite side of source electrode respectively, passivation layer
8 form package covering state with the top of drain electrode 5 and source electrode 6, and substrate 9 is located at the middle position inside substrate 1, multiple crystal lattice
Grid 10 are located at the inside of substrate 9, and crystal grid 10 is evenly distributed state, and three lenticules 11 are located at crystal grid 10
Right side, reflector plate 12 is located at the left side of crystal grid 10.
Substrate 1 uses high-temperature flexible substrate.
Compared with the glass substrate in tradition display using rigidity, it is aobvious that novel flexibility may be implemented using flexible substrate
Show that there are the advantages such as rollable, light-weight.
Etching barrier layer 7 and passivation layer 8, the raw material including following parts by weight proportion: epoxy acrylate 1.32-
4.3g, urethane acrylate 6-7g, methyl methacrylate 4-8g, butyl acrylate 6-8g, hydroxy-ethyl acrylate 2-7g, peace
The fragrant ether 3-5g of breath, benzophenone 1-3g, triethanolamine 0.5-1g, levelling agent 0.5-1.5g and light sensitizer 1-2g, including with
Lower step:
The preparation method of etching barrier layer 7
1) epoxy acrylate 2.45g, urethane acrylate 6.5g, methyl methacrylate 5g, butyl acrylate 7g and third
Olefin(e) acid hydroxyl ethyl ester 3.5g is put into glass container.
2) addition dehydrated alcohol is mixed, and mechanical stirring 5 minutes.
3) pressing plate is used, it is carried out to be preheated to 22 degrees Celsius, is uniformly coated by the uniform base-material of mechanical stirring to pressing plate
On, etch stopper layer film is made in natural cooling.
The preparation method of passivation layer 8
1) benzoin ethyl ether 3.5g, benzophenone 1.5g and triethanolamine 0.7g are put into container, it is mechanical that dehydrated alcohol is added
Stirring 3 minutes.
2) it by levelling agent 0.5g is added in container, is mixed using manual agitation mode, while being heated up to 25 degrees Celsius.
3) light sensitizer 1.5g is added, keeps agitation in a saturated state to its, passivation layer working fluid is made.
Embodiment two:
A kind of thin film transistor (TFT), including substrate 1, grid 2, gate dielectric layer 3, active layer 4, drain electrode 5, source electrode 6, etching barrier layer 7,
Passivation layer 8, substrate 9, crystal grid 10, lenticule 11 and reflector plate 12, grid 2 are set to the middle position at 1 top of substrate, grid
Pole dielectric layer 3 and the two sides of 1 bottom of substrate and the top of grid 2 are superimposed, the bottom of active layer 4 and the top of gate dielectric layer 3
Portion is staggeredly superimposed, and drain electrode 5 and source electrode 6 are located at the two sides at the top of active layer 4, and etching barrier layer 7 is located at 4 top of active layer
Middle position, and the two sides at 7 top of etching barrier layer are superimposed with the bottom of drain electrode 5 and 6 opposite side of source electrode respectively, passivation layer
8 form package covering state with the top of drain electrode 5 and source electrode 6, and substrate 9 is located at the middle position inside substrate 1, multiple crystal lattice
Grid 10 are located at the inside of substrate 9, and crystal grid 10 is evenly distributed state, and three lenticules 11 are located at crystal grid 10
Right side, reflector plate 12 is located at the left side of crystal grid 10.
Etching barrier layer 7 and passivation layer 8, the raw material including following parts by weight proportion: epoxy acrylate 1.32-
4.3g, urethane acrylate 6-7g, methyl methacrylate 4-8g, butyl acrylate 6-8g, hydroxy-ethyl acrylate 2-7g, peace
The fragrant ether 3-5g of breath, benzophenone 1-3g, triethanolamine 0.5-1g, levelling agent 0.5-1.5g and light sensitizer 1-2g, including with
Lower step:
The preparation method of etching barrier layer 7
1) epoxy acrylate 3g, urethane acrylate 6.5g, methyl methacrylate 6g, butyl acrylate 7.5g and propylene
Sour hydroxyl ethyl ester 5g is put into glass container.
2) addition dehydrated alcohol is mixed, and mechanical stirring 5 minutes.
3) pressing plate is used, it is carried out to be preheated to 23 degrees Celsius, is uniformly coated by the uniform base-material of mechanical stirring to pressing plate
On, etch stopper layer film is made in natural cooling.
The preparation method of passivation layer 8
1) benzoin ethyl ether 4g, benzophenone 2g and triethanolamine 0.8g are put into container, dehydrated alcohol mechanical stirring 3 is added
Minute.
2) it by levelling agent 1g is added in container, is mixed using manual agitation mode, while being heated up to 25 degrees Celsius.
3) light sensitizer 1.5g is added, keeps agitation in a saturated state to its, passivation layer working fluid is made.
Embodiment three:
A kind of thin film transistor (TFT), including substrate 1, grid 2, gate dielectric layer 3, active layer 4, drain electrode 5, source electrode 6, etching barrier layer 7,
Passivation layer 8, substrate 9, crystal grid 10, lenticule 11 and reflector plate 12, grid 2 are set to the middle position at 1 top of substrate, grid
Pole dielectric layer 3 and the two sides of 1 bottom of substrate and the top of grid 2 are superimposed, the bottom of active layer 4 and the top of gate dielectric layer 3
Portion is staggeredly superimposed, and drain electrode 5 and source electrode 6 are located at the two sides at the top of active layer 4, and etching barrier layer 7 is located at 4 top of active layer
Middle position, and the two sides at 7 top of etching barrier layer are superimposed with the bottom of drain electrode 5 and 6 opposite side of source electrode respectively, passivation layer
8 form package covering state with the top of drain electrode 5 and source electrode 6, and substrate 9 is located at the middle position inside substrate 1, multiple crystal lattice
Grid 10 are located at the inside of substrate 9, and crystal grid 10 is evenly distributed state, and three lenticules 11 are located at crystal grid 10
Right side, reflector plate 12 is located at the left side of crystal grid 10.
Etching barrier layer 7 and passivation layer 8, the raw material including following parts by weight proportion: epoxy acrylate 1.32-
4.3g, urethane acrylate 6-7g, methyl methacrylate 4-8g, butyl acrylate 6-8g, hydroxy-ethyl acrylate 2-7g, peace
The fragrant ether 3-5g of breath, benzophenone 1-3g, triethanolamine 0.5-1g, levelling agent 0.5-1.5g and light sensitizer 1-2g, including with
Lower step:
The preparation method of etching barrier layer 7
1) epoxy acrylate 4.3g, urethane acrylate 7g, methyl methacrylate 7g, butyl acrylate 78g and propylene
Sour hydroxyl ethyl ester 6g is put into glass container.
2) addition dehydrated alcohol is mixed, and mechanical stirring 5 minutes.
3) pressing plate is used, it is carried out to be preheated to 25 degrees Celsius, is uniformly coated by the uniform base-material of mechanical stirring to pressing plate
On, etch stopper layer film is made in natural cooling.
The preparation method of passivation layer 8
1) benzoin ethyl ether 5g, benzophenone 2.5g and triethanolamine 1g are put into container, dehydrated alcohol mechanical stirring 3 is added
Minute.
2) it by levelling agent 1.5g is added in container, is mixed using manual agitation mode, while being heated up to 25 degrees Celsius.
3) light sensitizer 2g is added, keeps agitation in a saturated state to its, passivation layer working fluid is made.
In conclusion setting of the present invention due to etching barrier layer 7 and passivation layer 8, is carved no matter can reach using dry method
Erosion or wet etching, avoiding the occurrence of over etching step of the source electrode and drain electrode in direct patterning process will be to oxide half
Conductor active layer bring influences, and then prevents from causing the effect of poor device properties, and the present invention is changed by crystal grid 10
The light transmittance of substrate 1 avoids under illumination condition oxide TFT device property by there is a phenomenon where degenerating, in addition, in illumination
When NBS under the transfer characteristic of device the drift of apparent negative sense will occur, to improve the imaging effect of thin film transistor (TFT).
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (6)
1. a kind of thin film transistor (TFT), including substrate (1), grid (2), gate dielectric layer (3), active layer (4), drain electrode (5), source electrode
(6), etching barrier layer (7), passivation layer (8), substrate (9), crystal grid (10), lenticule (11) and reflector plate (12), it is special
Sign is: the grid (2) is set to the middle position at the top of substrate (1), the gate dielectric layer (3) and substrate (1) bottom
Two sides and grid (2) top it is superimposed, the bottom of the active layer (4) is staggeredly superimposed with the top of gate dielectric layer (3),
The drain electrode (5) and source electrode (6) are located at the two sides at the top of active layer (4), and the etching barrier layer (7) is located at active layer
(4) middle position at the top of, and the bottom with drain electrode (5) and source electrode (6) opposite side respectively of the two sides at the top of etching barrier layer (7)
Portion is superimposed, the top formation package covering state of the passivation layer (8) and drain electrode (5) and source electrode (6), substrate (9) position
In the internal middle position of substrate (1), multiple crystal grids (10) are located at the inside of substrate (9), and crystal grid (10)
Be evenly distributed state, and three lenticules (11) are located at the right side of crystal grid (10), reflector plate (12) position
In the left side of crystal grid (10).
2. a kind of thin film transistor (TFT) according to claim 1, it is characterised in that: the substrate (1) can be glass baseplate, stone
English substrate and high-temperature flexible substrate.
3. a kind of thin film transistor (TFT) according to claim 1, it is characterised in that: the vertical cross-section of the crystal grid (10)
Shape is antiparallelogram, and the spacing between crystal grid (10) is 30 to 60 μm.
4. a kind of thin film transistor (TFT) according to claim 1, it is characterised in that: the cross sectional shape of the reflector plate (12) can
For rectangle or trapezoidal, and single reflector plate (12) is located at opposite side adjacent between two lenticules (11), described in two
Spacing between reflector plate (12) is 24 to 32 μm, and the gap between two reflector plates (12) is transmission region.
5. a kind of thin film transistor (TFT) according to claim 1, which is characterized in that the etching barrier layer (7) and passivation layer
(8) preparation method includes the raw material of following parts by weight proportion: epoxy acrylate 1.32-4.3g, urethane acrylate 6-
7g, methyl methacrylate 4-8g, butyl acrylate 6-8g, hydroxy-ethyl acrylate 2-7g, benzoin ethyl ether 3-5g, benzophenone
1-3g, triethanolamine 0.5-1g, levelling agent 0.5-1.5g and light sensitizer 1-2g.
6. a kind of thin film transistor (TFT) according to claim 5, which is characterized in that the etching barrier layer (7) and passivation layer
(8) preparation method the following steps are included:
The preparation method of etching barrier layer (7)
1) epoxy acrylate 1.32g, urethane acrylate 6g, methyl methacrylate 4g, butyl acrylate 6g and propylene
Sour hydroxyl ethyl ester 2g is put into glass container；
2) addition dehydrated alcohol is mixed, and mechanical stirring 5 minutes；
3) pressing plate is used, it is carried out to be preheated to 20-25 degrees Celsius, is uniformly coated by the uniform base-material of mechanical stirring to pressing plate
On, etch stopper layer film is made in natural cooling；
The preparation method of passivation layer (8)
1) benzoin ethyl ether 3g, benzophenone 1g and triethanolamine 0.5g are put into container, dehydrated alcohol mechanical stirring 3 is added
Minute；
2) it by levelling agent 0.5g is added in container, is mixed using manual agitation mode, while being heated up to 25 degrees Celsius；
3) light sensitizer 1g is added, keeps agitation in a saturated state to its, passivation layer working fluid is made.
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| CN1651993A (en) * | 2004-02-05 | 2005-08-10 | Lg电子有限公司 | Trans-reflecting sheet, LCD device having the same, and method for fabricating the trans-reflecting sheet |
| CN101667599A (en) * | 2008-09-05 | 2010-03-10 | 株式会社半导体能源研究所 | Thin film transistor |
| US20170017103A1 (en) * | 2015-04-09 | 2017-01-19 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Thin Film Transistor Array Substrate and Manufacturing Method Thereof |
| EP3121851A2 (en) * | 2015-06-30 | 2017-01-25 | LG Display Co., Ltd. | Thin-film transistor substrate and display device comprising the same |
-
2019
- 2019-01-23 CN CN201910064263.1A patent/CN109841688B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1651993A (en) * | 2004-02-05 | 2005-08-10 | Lg电子有限公司 | Trans-reflecting sheet, LCD device having the same, and method for fabricating the trans-reflecting sheet |
| CN101667599A (en) * | 2008-09-05 | 2010-03-10 | 株式会社半导体能源研究所 | Thin film transistor |
| US20170017103A1 (en) * | 2015-04-09 | 2017-01-19 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Thin Film Transistor Array Substrate and Manufacturing Method Thereof |
| EP3121851A2 (en) * | 2015-06-30 | 2017-01-25 | LG Display Co., Ltd. | Thin-film transistor substrate and display device comprising the same |
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