CN109839799A - Mask assembly and its exposure method - Google Patents

Abstract

A kind of mask assembly and its exposure method, pass through the first mask plate and the second mask plate of overlapping setting, the second graph of the first figure and the second mask plate that make the first mask plate is matched to form targeted graphical, and the first offset marker with corresponding reference mark to for aligning.Therefore the combination for passing through the first figure and second graph, is capable of forming targeted graphical of different shapes；And first spacing between offset marker pair and spacing is unequal between adjacent reference label, so by aligning the first different offset markers pair with corresponding reference mark, to make to generate relative displacement between the first figure and second graph, the different targeted graphical of line width, line-spacing is formed；That is, technical solution of the present invention can be formed by mask assembly different shape, line width, line-spacing targeted graphical, so as to effectively reduce the quantity of mask plate, it can be effectively reduced process costs, and then be conducive to the control of colored optical filtering substrates cost.

Description

Mask assembly and its exposure method

Technical field

The present invention relates to flat display field more particularly to a kind of mask assemblies and its exposure method.

Background technique

The advantages that liquid crystal display device is light-weight with small in size, Low emissivity is widely used in various fields.

Liquid crystal display panel is most important component part in liquid crystal display device.The liquid crystal display panel includes array Substrate (Thin Film Transistor, i.e. TFT substrate), the colored optical filtering substrates (Color opposite with the array substrate Filter, i.e. CF substrate) and it is filled in liquid crystal between array substrate and colored optical filtering substrates.Wherein, the array substrate With the electrode on colored optical filtering substrates by the deflection of control liquid crystal molecule, to adjust the percent of pass of ambient light, and then reach aobvious The purpose shown.

With reference to Fig. 1, a kind of the schematic diagram of the section structure of colored optical filtering substrates in liquid crystal display panel is shown.Herein, with Liquid crystal display panel of thin film transistor (Thin Film Transistor-Liquid Crystal Display, TFT-LCD) is Example is illustrated.

The current colored optical filtering substrates specifically include that the first glass substrate 10；On first glass substrate 10 Black matrix layer 11 (Black Matrix, BM layer), between the black matrix layer 11 color light resistance layer 12 (Red, Green, Blue, RGB layer), the protective layer 13 (the Over Coat, OC that are covered in the black matrix layer 11 and color light resistance layer 12 Layer), the transparency conducting layer 14 (ITO layer) that is covered on the protective layer 13 and the interval on the transparency conducting layer 14 Column 15 (Photo Spacer, PS).

Wherein, color light resistance layer 12 includes: blue light resistance 12b, red photoresist 12r and green photoresist 12g, for saturating respectively Blue light, feux rouges and the green light in white light are crossed, the transparency conducting layer 14 is used as public electrode.

With reference to Fig. 2, a kind of the schematic diagram of the section structure of liquid crystal display panel is shown.

The liquid crystal display panel further includes the array substrate for covering the colored optical filtering substrates, the array substrate packet Include: the second glass substrate 20, the electrode layer 21 on second glass substrate 20, the electrode layer 21 include a plurality of grid Line and multiple data lines and positioned at grid line and data line intersection thin film transistor (TFT) (Thin Film Transistor, TFT), the grid line and data line surround a sub-pixel 22 (Sub Pixel), and the drain electrode of the thin film transistor (TFT) is connected with Pixel electrode.

The space that the array substrate and the colored optical filtering substrates and the spacer column 15 surround constitutes liquid crystal cell, liquid Crystalline substance is filled in the liquid crystal cell.The electricity formed between public electrode on pixel electrode and colored optical filtering substrates in array substrate , the deflection angle of liquid crystal molecule 16 in liquid crystal cell can be controlled, and then change the intensity of the transmitted ray out of described liquid crystal cell.

On the other hand, the blue light resistance 12b on the colored optical filtering substrates, the red photoresist 12r and described green Coloured light hinders the sub-pixel 22 on 12g, with array substrate and corresponds, and three sub-pixels 22 constitute a pixel 23.

Backlight 30 is transmitted through in the color light resistance layer 12, after liquid crystal cell transmission respectively from the blue light resistance 12b, the red photoresist 12r and the green photoresist 12g.With in different liquid crystal cells, 16 deflection angle of liquid crystal molecule is not Together, the light intensity for transmiting different liquid crystal cells is different, therefore from the blue light resistance 12b, the red photoresist 12r and described green The different colours light quantity of coloured light resistance 12g outgoing is also not quite similar, then keeps pixel 23 available abundant based on addition colour mixture principle Color representation.

So different depending on the application, the performance requirement of liquid crystal display device is also different, therefore each layer on colored optical filtering substrates Shape and line width, line-spacing can change with the change of liquid crystal display device performance requirement.Prior art production different shape, , often there is higher cost in the colored optical filtering substrates of line width, line-spacing.

Summary of the invention

Problems solved by the invention is to provide a kind of mask assembly and its exposure method, to reduce exposure mask quantity, reduces work Skill cost.

To solve the above problems, the present invention provides a kind of mask assembly, it is exposed for treating exposure layer to form tool There is the patterned layer of targeted graphical, the layer to be exposed is negativity photoresist layer, comprising:

First mask plate, the external zones including graph area and the encirclement graph area, the first exposure mask of the graph area There is the first figure on plate, there is reference mark group on the first mask plate of the external zones, the reference mark group includes more The reference mark of a spaced set；Second mask plate, with the overlapping setting of first mask plate, second mask plate includes Graph area and the external zones for surrounding the graph area have second graph on the second mask plate of the graph area, for First figure is matched to form at least partly described targeted graphical, has first on the second mask plate of the external zones Offset marker group, the first offset marker group include multiple first offset markers pair, the multiple first offset marker pair with The multiple reference mark corresponds, and interval is less than the adjacent fiducial mark between adjacent first offset marker pair Interval is greater than spacing between the adjacent reference mark, institute between spacing or adjacent first offset marker pair between note The first offset marker is stated to including two spaced first offset markers, at least one in the first offset marker group the Orthographic projection of two the first offset markers of one offset marker pair on first mask plate is symmetrically located in corresponding benchmark Mark two sides.

Optionally, spacing is less than spacing between the adjacent reference mark between adjacent first offset marker pair.

Optionally, between adjacent first offset marker pair between spacing and the adjacent reference mark spacing difference In 1 μm to 5 μ ms.

Optionally, the reference mark group includes lateral fiducial markings group and longitudinal reference mark group, the lateral fiducial The reference mark of mark group is arranged along first direction, and the reference mark of the longitudinal direction reference mark group arranges in a second direction, institute It states first direction and the second direction is perpendicular；The first offset marker group includes the first lateral shift mark group and first First offset marker of vertical misalignment mark group, the first lateral shift mark group is arranged along the first direction, described First offset marker of first longitudinal direction offset marker group is arranged along the second direction；On first mask plate, first The orthographic projection of two the first offset markers of first offset marker pair is symmetrically located in lateral base in lateral shift mark group Corresponding reference mark two sides in quasi- mark group；On first mask plate, one first in first longitudinal direction offset marker group The orthographic projection of two the first offset markers of offset marker pair is symmetrically located in corresponding reference mark in longitudinal reference mark group Two sides.

Optionally, the graph area of first mask plate and the graph area of second mask plate are square or rectangular Shape, the external zones side of the being annular of the second mask plate described in the external zones of first mask plate；The number of the reference mark group Amount is 4, is located at the corner of the first mask plate external zones；The quantity of the first offset marker group is 4, point Not Wei Yu external zones described in second mask plate corner.

Optionally, interval and the reference mark size between described first offset marker centering, two the first offset markers Ratio be greater than 1, be less than or equal to 1.2.

Optionally, the reference mark is strip；First offset marker is strip, first offset marker Orthographic projection on first mask plate is parallel with corresponding reference mark.

Optionally, the equal length of multiple reference marks described in the reference mark group；Institute in first offset marker group There is the first offset marker equal length of the first offset marker pair.

Optionally, the length of first offset marker is less than the length of the reference mark.

Optionally, on first mask plate, one end and the reference mark of the first offset marker orthographic projection One end flushes.

Optionally, further includes: third mask plate, with first mask plate and the overlapping setting of second mask plate, institute Stating third mask plate includes graph area and the external zones for surrounding the graph area, is had on the third mask plate of the graph area Third figure, the third figure with first figure and the second graph for matching to form the targeted graphical； There is the second offset marker group, the second offset marker group includes multiple second offsets on the third mask plate of the external zones Label pair, the multiple second offset marker pair and the multiple reference mark correspond, adjacent second offset marker Interval is less than between the adjacent reference mark and is spaced between spacing or adjacent second offset marker pair between Greater than spacing between the adjacent reference mark, second offset marker is to including two spaced second offsets It marks, two the second offset markers of at least one the second offset marker pair are covered described first in the second offset marker group Orthographic projection on diaphragm plate is symmetrically located in corresponding reference mark two sides.

Optionally, the reference mark is strip；First offset marker is strip；Second offset marker For strip；On first mask plate, one end of the first offset marker orthographic projection and one end of the reference mark are neat Flat, one end of the second reference mark orthographic projection is flushed with the other end of the reference mark.

Correspondingly, being exposed the present invention also provides a kind of exposure method for treating exposure layer to be formed and there is target The patterned layer of figure, the layer to be exposed are negativity photoresist layer, comprising:

Mask assembly of the invention is provided；According to the targeted graphical and first figure and second graph, the is obtained One map migration amount；Load first mask plate；Load second mask plate；First pair is carried out to second mask plate Position processing, first contraposition processing include: according to the first map migration amount, select first offset marker to as The telltale mark pair of second mask plate, and make two the first offset markers of the telltale mark pair on first mask plate Orthographic projection be symmetrically located in corresponding reference mark two sides, to realize the positioning of second mask plate；It is covered to described second After diaphragm plate carries out the first contraposition processing, the layer to be exposed is exposed using the mask assembly.

Optionally, one of the multiple first offset marker centering be first zero offset marker pair, the described 1st Orthographic projection of two the first offset markers of point offset marker pair on first mask plate is symmetrically located in corresponding benchmark When marking two sides, first figure and the second graph constitute first zero figure；The first map migration amount includes First lateral figure offset and first longitudinal direction map migration amount；The step of obtaining the first map migration amount includes: basis The targeted graphical and the difference of the first zero figure in a first direction obtain the described first lateral figure offset； According to the targeted graphical and the difference of the first zero figure in a second direction, the first longitudinal direction map migration is obtained Amount, the second direction and the first direction are perpendicular.

Optionally, the reference mark group includes lateral fiducial markings group and longitudinal reference mark group, the lateral fiducial The reference mark of mark group is arranged along the first direction, and the reference mark of the longitudinal direction reference mark group is along the second direction Setting；The first offset marker group include with the first lateral shift mark group and first longitudinal direction offset marker group, described first First offset marker of lateral shift mark group is arranged along the first direction, and the first of the first longitudinal direction offset marker group is partially Label is moved to be arranged along the upper second direction；First contraposition processing include: according to the described first lateral figure offset, Selected in the first lateral shift mark group first offset marker to as the second mask plate located lateral label pair, And it is symmetrically located in orthographic projection of two the first offset markers of the located lateral label pair on first mask plate Corresponding reference mark two sides in lateral fiducial markings group；According to the first longitudinal direction map migration amount, in the first longitudinal direction It selects first offset marker to the longitudinal register label pair as the second mask plate in offset marker group, and makes the longitudinal direction Orthographic projection of two the first offset markers of telltale mark pair on first mask plate is symmetrically located in longitudinal reference mark Corresponding reference mark two sides in group.

Optionally, the mask assembly further include: third mask plate, with first mask plate and second mask plate Overlapping setting, the third mask plate include graph area and the external zones for surrounding the graph area, the third of the graph area There is third figure, for matching to form the targeted graphical with first figure and the second graph on mask plate； There is the second offset marker group, the second offset marker group includes multiple second offsets on the third mask plate of the external zones Label pair, the multiple second offset marker pair is corresponding with the multiple reference mark 21, adjacent second offset marker Interval is less than between the adjacent reference mark and is spaced between spacing or adjacent second offset marker pair between Greater than spacing between the adjacent reference mark, second offset marker is to including two spaced second offsets It marks, two the second offset markers of at least one the second offset marker pair are covered described second in the second offset marker group Orthographic projection on diaphragm plate is symmetrically located in corresponding reference mark two sides；The exposure method further include: the mask set is provided After part, according to the targeted graphical, the first zero figure and the third figure, second graph offset is obtained；It is right After second mask plate carries out the first contraposition processing, before being exposed, the third mask plate is loaded；To the third Mask plate carries out the second contraposition processing, and second contraposition processing includes: to select one the according to the second graph offset Two offset markers make two the second offset markers of the telltale mark pair exist the telltale mark pair as third mask plate Orthographic projection on first mask plate is symmetrically located in corresponding reference mark two sides, to realize determining for the third mask plate Position；The step of being exposed using the mask assembly includes: to utilize first mask plate, second mask plate and described Third mask plate is exposed the layer to be exposed.

Optionally, one of multiple second offset marker centerings is the second zero migration label pair, and second zero point is inclined It moves orthographic projection of two the second offset markers of label pair on first mask plate and is symmetrically located in corresponding reference mark When two sides, the position of third figure orthographic projection on first mask plate is the second dead-center position；The second graph Offset includes the second lateral figure offset and second longitudinal direction map migration amount；The step of obtaining the second graph offset It include: that the deviation post of the third figure is obtained according to the difference of the targeted graphical and the first zero figure；According to The difference of the deviation post and second dead-center position in a first direction obtains the described second lateral figure offset； According to the difference of the deviation post and second dead-center position in a second direction, the second longitudinal direction map migration is obtained Amount；According to the targeted graphical and the difference of the first zero figure in a first direction, the described first lateral figure is obtained Offset.

Optionally, the quantity of the reference mark group is 4, and the quantity of the first offset marker group is 4；To described Second mask plate carried out in the step of the first contraposition processing, the first corresponding offset in 4 the first offset marker groups For label to being the telltale mark pair, the first contraposition processing marks two first offsets of 4 telltale marks pair Remember that the orthographic projection on first mask plate is symmetrically located in corresponding reference mark two sides, to realize second exposure mask The positioning of plate.

Optionally, during being exposed to the layer to be exposed, exposure power is greater than 40mJ/cm²。

Compared with prior art, technical solution of the present invention has the advantage that

The overlapping setting of first mask plate and second mask plate, the first figure of first mask plate and described The second graph of second mask plate is matched to form the targeted graphical, and first offset marker is to being used for and corresponding base Fiducial mark note aligns.Therefore by the combination of first figure and the second graph, it is capable of forming target of different shapes Figure；And spacing is unequal between spacing and the adjacent reference mark between first offset marker pair, so passing through Align the first different offset markers pair with corresponding reference mark, to make first figure and the second graph Between generate relative displacement, form the different targeted graphical of line width, line-spacing；That is, technical solution of the present invention can pass through One mask assembly formed different shape, line width, line-spacing targeted graphical, so as to effectively reduce the quantity of mask plate, energy Process costs are enough effectively reduced, and then are conducive to the control of colored optical filtering substrates cost.

In optinal plan of the present invention, between spacing is less than between adjacent reference mark pair between adjacent first offset marker pair Away from so as to make to be displaced change between the graphic change of the targeted graphical and first mask plate and second mask plate Change direction is consistent, advantageously reduces the technology difficulty of first mask plate and second mask plate alignment, is conducive to drop Low technology difficulty is conducive to the raising of manufacturing yield and device performance.

In optinal plan of the present invention, between adjacent first offset marker pair between spacing and the adjacent reference mark The difference of spacing is in 1 μm to 5 μ ms；Between adjacent first offset marker pair spacing and the adjacent reference mark it If spacing is too big between, different first offset markers pair with corresponding reference mark to being aligned when, first figure and described Generation relative displacement difference is excessive between second graph, is unfavorable for the precision of line width, line-spacing variation；The adjacent first offset mark If spacing is too small between spacing and the adjacent reference mark between for note, in order to reach certain variation range, need Increase by first offset marker to the quantity with the reference mark, to will increase described occupied by the reference mark group The area of first mask plate will increase the area of the second mask plate occupied by the first offset marker group, be unfavorable for described Designing and manufacturing for one mask plate and second mask plate, is unfavorable for the control of cost.

In optinal plan of the present invention, first offset marker and the reference mark are in long strip, first offset The length of label is less than the length of the reference mark, and on first mask plate, the first offset marker orthographic projection One end flushed with one end of the reference mark；Therefore described first can be realized directly by the difference of positions and dimensions The differentiation of offset marker and the reference mark, so first mask plate and second mask plate can be effectively reduced Alignment difficulty, advantageously reduce technology difficulty, be conducive to the raising of manufacturing yield and device performance.

In optinal plan of the present invention, the quantity of the reference mark group is 4, and the quantity of the first offset marker group is 4；When being exposed, 4 first offset markers are aligned to being the telltale mark with corresponding reference mark, To realize the positioning of second mask plate, the precision and accuracy of the second mask plate positioning can be effectively improved, Technology difficulty is advantageously reduced, the raising of manufacturing yield and device performance is conducive to.

In optinal plan of the present invention, when being exposed using the mask assembly, exposure power is greater than 40mJ/cm².Exposure If power is too small, exposure light is transmiting first mask plate and second mask plate, will affect described to be exposed The exposure of layer, may will affect the formation quality of the targeted graphical, be unfavorable for the raising of manufacturing yield and device performance.

Detailed description of the invention

Fig. 1 is a kind of the schematic diagram of the section structure of colored optical filtering substrates in liquid crystal display panel；

Fig. 2 is a kind of the schematic diagram of the section structure of liquid crystal display panel；

Fig. 3 is a kind of overlooking structure diagram of black matrix layer in colored optical filtering substrates；

Fig. 4 is lateral structure schematic diagram of one embodiment of mask assembly of the present invention in exposure；

Fig. 5 be mask assembly embodiment of the present invention shown in Fig. 4 in exposure along the partial top structural schematic diagram in the direction A；

Fig. 6 be in mask assembly embodiment of the present invention shown in Fig. 4 the first mask plate along the overlooking structure diagram in the direction A；

Fig. 7 is the enlarged diagram of structure in dotted line frame 190 in mask assembly embodiment of the present invention shown in Fig. 6；

Fig. 8 is that plan structure of second mask plate 200 along the direction A is illustrated in mask assembly embodiment of the present invention shown in Fig. 4 Figure；

Fig. 9 is the enlarged diagram of structure in dotted line frame 290 in mask assembly embodiment of the present invention shown in Fig. 8；

Figure 10 is that plan structure of the third mask plate 300 along the direction A is illustrated in mask assembly embodiment of the present invention shown in Fig. 4 Figure；

Figure 11 is the enlarged diagram of structure in dotted line frame 390 in mask assembly embodiment of the present invention shown in Figure 10；

Figure 12 is the flow diagram of one embodiment of exposure method of the present invention；

Figure 13 is to be obtained in exposure method embodiment shown in Figure 12 according to the first zero figure and the targeted graphical The structural schematic diagram of the first map migration amount；

Figure 14 be in exposure method embodiment shown in Figure 12 the first contraposition processing after the mask assembly along the direction A portion Divide overlooking structure diagram.

Specific embodiment

It can be seen from background technology that, prior art different shape, line width, line-spacing colored optical filtering substrates formation cost compared with It is high.The reason of now in conjunction with a kind of its problem with high costs of the structural analysis of colored optical filtering substrates:

It is required according to the difference of terminal client, the shape of each layer can make corresponding adjustment on colored optical filtering substrates: in hand In the fast-moving consumer goods such as machine, plate, liquid crystal display panel needs to have in bright gay color (form and aspect, color saturation, brightness), image quality clear The features such as clear (resolution ratio, PPI), picture smoothness (liquid crystal corresponding speed), but the environment as locating for fast-moving consumer goods is general It is relatively stable, therefore to life of product (reliability, adhesive force) and stability, (extreme high/low temperature, continues high humidity fast-moving consumer goods Vibration) aspect it is relatively low；And for the vehicle-mounted product of industry control medical treatment, requirement of the liquid crystal display panel to display effect is relatively It is low, but due to working environment complexity, therefore it is required that the service life of liquid crystal display panel and stability requirement with higher.

As shown in Figure 1, black matrix layer 11 is located on the first glass substrate 10, it can play and block bias light, prevent background The effect of light leakage；There is opening 11a, the blue light resistance 12b, the red photoresist 12r and described green in black matrix layer 11 Coloured light resistance 12g is filled in respectively in the opening 11a of the black matrix" 11 according to certain pattern, therefore 11 inner opening of black matrix The size of the line width a of the opening size b and black matrix of 11a will affect the contrast of constituted liquid crystal display device, colour mixture effect The display effects such as fruit colour purity.

So opening shape, opening size b and the line width a of black matrix layer 11 will be different for different product: For fast-moving consumer goods, the line width a in black matrix layer 11 is smaller, to increase opening size b, to improve the brightness of display And resolution ratio；And for the vehicle-mounted product of industry control medical treatment, the line width a in black matrix layer 11 is relatively large, to increase described black Contact area between matrix layer 11 and first glass substrate 10 improves the black matrix layer 11 and the first glass base Adhesive force between plate 10, to improve service life and the stability of the colored optical filtering substrates.

With reference to Fig. 3, a kind of overlooking structure diagram of black matrix layer in colored optical filtering substrates is shown.

The black matrix layer 40 includes: spacer portion 42, between adjacent apertures 41, for blocking between adjacent subpixels Backlight, realize different colours chromatic photoresist isolation；And device portion 43, it is corresponding with the position of the thin film transistor (TFT), For blocking the thin film transistor (TFT).

For different products, the variation that the shape of the black matrix layer can occur, therefore for black square of different shapes For battle array layer, need to be made of different mask plates (Mask).When changing the shape of the black matrix layer, it is necessary to It is made of a whole set of completely new exposure mask, to cause the raising of process costs, and then leads to formed colorized optical filtering base The high cost problem of plate.

To solve the technical problem, the present invention provides a kind of mask assembly, passes through first figure and described second The combination of figure forms targeted graphical of different shapes；And relative displacement shape between first figure and the second graph At the different targeted graphical of line width, line-spacing；So a mask assembly be capable of forming different shape, line width, line-spacing target figure Shape can be effectively reduced cost so as to effectively reduce the quantity of mask plate.

To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention Specific embodiment be described in detail.

With reference to Fig. 4 to Figure 11, the schematic diagram of the section structure of one embodiment of mask assembly of the present invention is shown.

Wherein, Fig. 4 shows lateral structure schematic diagram of the mask assembly embodiment of the present invention in exposure；Fig. 5 is Fig. 4 Overlooking structure diagram of the shown mask assembly embodiment of the present invention part along the direction A.

It should be noted that the mask assembly is exposed for treating exposure layer 001 to be formed and have targeted graphical Patterned layer, the layer 001 to be exposed be negativity photoresist layer.Specifically, the layer 001 to be exposed exposes in the present embodiment After form black matrix layer, and the layer to be exposed 001 is negative photoresist；Therefore, as shown in figure 3, the targeted graphical with The shape of 40 split shed 41 of black matrix layer is identical.

The mask assembly includes:

First mask plate 100, the external zones including graph area 101 (as shown in Figure 6) and the encirclement graph area 101 102 (as shown in Figure 6) have the first figure 110 (as shown in Figure 6) on the first mask plate 100 of the graph area 101, described There is reference mark group 120 (as shown in Figure 6) on first mask plate 100 of external zones 102, the reference mark group 120 includes The reference mark 121 (as shown in Figure 7) of multiple spaced sets；Second mask plate 200, it is overlapping with first mask plate 100 Setting, second mask plate 200 include graph area 201 (as shown in Figure 7) and the external zones for surrounding the graph area 201 202, there is second graph 210 (as shown in Figure 7) on the second mask plate 200 of the graph area 201, be used for and first figure Shape 110 is matched to form at least partly described targeted graphical, has first on the second mask plate 200 of the external zones 102 Offset marker group 220 (as shown in Figure 7), the first offset marker group 220 include multiple first offset markers to 221 (such as Fig. 8 It is shown), the multiple first offset marker is corresponded to 221 with the multiple reference mark 121, adjacent first offset Label is less than between the adjacent reference mark 121 spacing L11 or adjacent described first partially to interval L21 between 221 Move label it is (as shown in Figure 8) to interval L21 between 221 greater than spacing L11 between the adjacent reference mark 121 (such as Fig. 6 institute Show), first offset marker includes two spaced first offset marker 221m (as shown in Figure 8) to 221, such as Figure 11 Shown, at least one first offset marker exists to 221 two the first offset marker 221m in the first offset marker group 220 Orthographic projection on first mask plate 100 is symmetrically located in corresponding 121 two sides of reference mark.

First mask plate 100 and the overlapping setting of second mask plate 200, the first of first mask plate 100 The second graph 210 of figure 110 and second mask plate 200 is matched to form the targeted graphical, first offset Label is to 121 for aligning with corresponding reference mark 121.Therefore pass through first figure 110 and the second graph 210 combination is capable of forming targeted graphical of different shapes；And first offset marker to spacing between 221 with it is adjacent Spacing is unequal between the reference mark 121, so by making the first different offset markers to 221 and corresponding fiducial mark Remember that phase 111 is aligned, so as to generate relative displacement between first figure 110 and the second graph 210, forms line width, line Away from different targeted graphicals；That is, technical solution of the present invention can form different shape, line by a mask assembly Wide, line-spacing targeted graphical can be effectively reduced process costs, and then advantageous so as to effectively reduce the quantity of mask plate In the control of colored optical filtering substrates cost.

It should be noted that as shown in figure 5, in the present embodiment, first figure 110 and the second graph 210 Targeted graphical described in energy composition part, thus it is complete in order to supplement, so that the complete targeted graphical is constituted, as shown in figure 4, In the present embodiment, the mask assembly further include: third mask plate 300, with first mask plate 100 and second exposure mask The overlapping setting of plate 200, the third mask plate 300 include graph area 301 (as shown in Figure 9) and the encirclement graph area 301 External zones 302 (as shown in Figure 9), have third figure 310 (such as Fig. 9 institute on the third mask plate 300 of the graph area 301 Show), the third figure 210 with first figure 110 and the second graph 210 for matching to form the target figure Shape；There is the second offset marker group 320 (as shown in Figure 9), described second partially on the third mask plate 300 of the external zones 302 Moving mark group 320 includes multiple second offset markers to 321 (as shown in Figure 10), the multiple second offset marker to 321 and The multiple reference mark 121 corresponds, and adjacent second offset marker is to being spaced L31 (as shown in Figure 10) between 321 Less than spacing L11 (as shown in Figure 6) or adjacent second offset marker pair between the adjacent reference mark 121 It is spaced L31 between 321 and is greater than spacing L11 between the adjacent reference mark 121, second offset marker is wrapped to 321 Include two spaced second offset marker 321m (as shown in Figure 10), as shown in figure 11, the second offset marker group 320 In two second offset marker 321ms positive throwing on first mask plate 100 of at least one second offset marker to 321 Shadow is symmetrically located in corresponding 121 two sides of reference mark.

The specific technical solution for mask assembly embodiment that the invention will now be described in detail with reference to the accompanying drawings.

With reference to Fig. 6 and Fig. 7, the first mask plate 100 is shown in mask assembly embodiment of the present invention shown in Fig. 4 along the direction A Overlooking structure diagram.Wherein, Fig. 7 is the amplification of structure in dotted line frame 190 in mask assembly embodiment of the present invention shown in Fig. 6 Schematic diagram.

First mask plate 100 is for targeted graphical described in composition part；In addition, first mask plate 100 is also used It is mask plate (i.e. described second mask plate 200 and the third of subsequent overlapping setting in the positioning for realizing the mask assembly Mask plate 300) location base is provided.

As shown in fig. 6, the graph area 101 is used to provide load-bearing surface for first figure 110.

Specifically, the graph area 101 is rectangle or square in the present embodiment, it is located at first mask plate 100 Central area.

First figure 110 is for targeted graphical described in composition part.

In the present embodiment, in order to constitute the targeted graphical, first figure 110 is rectangle.But the present invention couple The concrete shape of first figure 110 is without limitation.In other embodiments of the invention, when the shape of the targeted graphical occurs When variation, the shape of first figure also therewith variation be square, rule or the irregular shape such as diamond shape or even circle Shape.Since first figure is for constituting the target image, the shape of first figure and the targeted graphical Shape it is identical.

Specifically, as shown in fig. 6, there is 8 the first figures 110 being arranged in array, institute on first mask plate 100 With the single exposure of the mask assembly, 8 targeted graphicals in array can be formed simultaneously, it is described so as to efficiently use The area of first mask plate 100, reduces the cost of first mask plate 100, and can reduce exposure frequency, improves technique Stability is conducive to the improvement of manufacturing yield and device performance.

The external zones 102 is used to provide load-bearing surface for the reference mark group 120.

In the present embodiment, it is rectangle positioned at the graph area 101 of central area or square, so the external zones 102 be side's annular, surrounds the graph area 101 and is arranged.

The reference mark group 120 is used to provide location base for the mask plate of subsequent overlapping setting.

In the present embodiment, the external zones 102 is side's annular, and the quantity of the reference mark group 120 is 4, respectively position In the corner of 100 external zones 102 of the first mask plate.It is arranged on first mask plate 100 of the external zones 102 Multiple reference mark groups 120, and make the turning in the multiple 120 annular peripheral area, the side of being distributed in 102 of reference mark group The way at place can be such that multiple reference mark groups 120 are uniformly distributed on first mask plate 100, be conducive to subsequent masks The raising of plate (i.e. described second mask plate 200 and the third mask plate 300) positioning accuracy.

In the present embodiment, the reference mark group 120 includes lateral fiducial markings group 120x and longitudinal reference mark group The reference mark 121 of 120y, the lateral fiducial markings group 120x are arranged along first direction X, the longitudinal direction reference mark group Y is arranged the reference mark 121 of 120y in a second direction, and the first direction X and the second direction Y are perpendicular.

Specifically, first figure 110 on first mask plate 100 is arranged in array, the first direction X is The line direction of first figure, 110 array, the second direction Y are the column direction of 110 array of the first figure, that is, It says, the reference mark 121 in the lateral fiducial markings group 120x is arranged along the line direction of 110 array of the first figure, institute The reference mark 121 stated in longitudinal reference mark group 120y is arranged along the column direction of 110 array of the first figure.

As shown in fig. 7, in the present embodiment, the reference mark 121 is strip, and the extension of the reference mark 121 Direction is mutually perpendicular to orientation.Specifically, the reference mark 121 of the lateral fiducial markings group 120x is along the first party It arranges to X, extends along the second direction Y；The reference mark 121 of the longitudinal direction reference mark group 120y is along the second direction Y is arranged, and extends along the first direction X.

In the present embodiment, 121 equidistant parallel of multiple reference marks in the reference mark group 120 is arranged, i.e., any phase Adjacent reference mark 121 is parallel to each other and is spaced L11 and is equal.Specifically, the reference mark 121 etc. arranged in the same direction Away from arranged in parallel, that is to say, that arranged in parallel and adjacent reference between the reference mark 121 of the lateral fiducial markings group 120x Interval is L11 between label 121；Arranged in parallel and phase between reference mark 121 in the longitudinal direction reference mark group 120y It is spaced between adjacent reference mark 121 also as L11.

In the present embodiment, 121 equal length of multiple reference marks in the reference mark group 120, so as to effective The regularity and uniformity for improving figure on first mask plate 100 advantageously reduce the alignment difficulty of the mask assembly, Be conducive to the improvement of manufacturing yield He formed device performance.

It should be noted that being additionally provided with alignment mark figure on the external zones 101 of first mask plate 100 (in figure It is not shown).

In the present embodiment, the layer 001 to be exposed forms black matrix layer after exposing；The alignment mark figure is used in shape While at the targeted graphical, film layer alignment mark is formed in 102 corresponding position of external zones, is formed for subsequent film Alignment provide basis.

In other embodiments of the invention, formed after the layer to be exposed exposure subsequent color light resistance layer, spacer column etc. other Film layer has film layer alignment mark on the layer to be exposed, and the alignment mark figure is used for and the film layer alignment mark is real It is now aligned, to reduce the alignment error of subsequent film Yu the layer to be exposed, is conducive to changing for manufacturing yield and device performance It is kind.

With reference to Fig. 8 and Fig. 9, the second mask plate 200 is shown in mask assembly embodiment of the present invention shown in Fig. 4 along the direction A Overlooking structure diagram.Wherein, Fig. 9 is the amplification of structure in dotted line frame 290 in mask assembly embodiment of the present invention shown in Fig. 8 Schematic diagram.

Second mask plate 200 and the overlapping setting (as shown in Figure 4 and Figure 5) of first mask plate 100, are used for and institute It states the first mask plate 100 to match, to constitute at least partly described targeted graphical (as shown in Figure 5)；Can also by with institute It states and relative displacement occurs between the first mask plate 100, to make to produce between first figure 110 and the second graph 210 Raw relative displacement forms the different targeted graphical of line width, line-spacing.

Therefore second mask plate 200 and first mask plate 100 match be capable of forming different shape, line width, The targeted graphical of line-spacing can be effectively reduced process costs, and then be conducive to coloured silk so as to effectively reduce the quantity of mask plate The control of color optical filtering substrate cost.

As shown in figure 8, the graph area 201 is used to provide load-bearing surface for the second graph 210.

Specifically, the graph area of second mask plate 200 corresponding with the graph area 101 of first mask plate 110 201 be also rectangle or square, is located at 200 central area of the second mask plate.

The second graph 210 is located near 210 corresponding position of the first figure, is used for and first figure 110 It matches to constitute at least partly described targeted graphical.

In the present embodiment, first figure 110 is rectangle, in order to match with first figure 110, thus structure At at least partly described targeted graphical, the second graph 210 is also rectangle.But it is similar with first figure 110, this Invention to the concrete shape of the second graph 210 without limitation.In other embodiments of the invention, when the targeted graphical or When the shape of first figure changes, the shape of the second graph also therewith variation be square, diamond shape, or even circle The rule such as shape or irregular shape.Since the second graph is for constituting the target image, the second graph Shape it is identical as the shape of the targeted graphical.

Specifically, in the present embodiment, as shown in figure 5, throwing of the second graph 210 on first mask plate 100 Shadow at least partly coincides with first figure 110, thus with targeted graphical described in 110 composition part of the first figure. It should be noted that, with the variation of the targeted graphical shape, the second graph is described in other embodiments of the invention Projection on first mask plate can also be adjacent with first figure.

In the present embodiment, as shown in figure 8, it is corresponding with the first figure 110 on first mask plate 100, described second There are 8 second graphs 210 being arranged in array on mask plate 200, so the single exposure of the mask assembly, it can be simultaneously 8 targeted graphicals in array are formed, so as to efficiently use the area of second mask plate 200, reduce described second The cost of mask plate 200, and exposure frequency can be reduced, technology stability is improved, manufacturing yield and device performance are conducive to Improvement.

The external zones 202 is used to provide load-bearing surface for the first offset marker group 220.

In the present embodiment, it is rectangle positioned at the graph area 201 of central area or square, so with described first The external zones 102 of mask plate 110 is corresponding, and the external zones 202 of second mask plate 200 is side's annular, surrounds the figure Area 201 is arranged.

As shown in figure 5, the first offset marker group 220 is set to position corresponding with the reference mark group 120 Near, for being aligned with the reference mark group 120, to realize second mask plate 200 and first mask plate 100 Between alignment, and then the second graph 210 and first figure 110 is made to constitute at least partly described targeted graphical.

In the first offset marker group 220 adjacent first offset marker to spacing L21 (as shown in Figure 9) between 221 with Spacing L11 (as shown in Figure 7) is unequal between the adjacent reference mark 121, i.e., adjacent first offset marker is between 221 It is greater than between the adjacent reference mark 121 spacing L11 or adjacent first offset marker to spacing L21 between 221 away from L21 Less than spacing L11 between the adjacent reference mark 121.

So when the first different offset markers is aligned to 221 with corresponding reference mark 121, second mask plate Relative position is not identical between 200 and first mask plate 100, to make the second graph 210 and first figure Relative displacement is generated between shape 110；Therefore first offset marker can also be matched to 221 with the reference mark 121, It can be used in relative displacement relationship between the first figure 110 and the second graph 120 described in scale, so as to realize difference The formation of line width, different line-spacing targeted graphicals, and then the quantity of mask plate can be reduced, process costs are advantageously reduced, are controlled Colored optical filtering substrates cost.

With reference to Fig. 5, in conjunction with reference Fig. 7 and Fig. 9, in the present embodiment, spacing between adjacent 221 pairs of first offset marker L21 is less than spacing L11 between the adjacent reference mark 121.So when forming the targeted graphical of different line widths, it is described Between first figure 110 and the second graph 120 direction of relative displacement and the first corresponding offset marker to 221 institute Place position is consistent, advantageously reduces the technology difficulty of first mask plate and second mask plate alignment, is conducive to make Make the raising of yield and device performance.

In the present embodiment, spacing L21 and the adjacent reference mark 121 between adjacent 221 pairs of first offset marker Between spacing L11 difference in 1 μm to 5 μ ms.

Spacing L11 between spacing L21 and the adjacent reference mark 121 between adjacent 221 couples of first offset marker Difference should not it is too big also should not be too small.

Adjacent first offset marker is to spacing L11 between spacing L21 and the adjacent reference mark 121 between 221 If difference it is too big, when different first offset markers 221 with corresponding reference mark 121 to being aligned, first figure 110 The difference that relative displacement is generated between the second graph 120 is excessive, will lead to the change of formed targeted graphical line width, line-spacing Change it is excessive, be unfavorable for guarantee line width, line-spacing variation precision；Adjacent first offset marker is to spacing L21 and phase between 221 If the difference of spacing L11 is too small between the adjacent reference mark 121, in order to reach certain variation range, need to increase First offset marker is to 221 and the quantity of the reference mark 121, to will increase shared by the reference mark group 120 With the area of first mask plate 100, the face of the second mask plate 200 occupied by the first offset marker group 220 will increase Product is unfavorable for designing and manufacturing for first mask plate 100 and second mask plate 200, is unfavorable for the control of cost.

Moreover, the mask assembly is used to form black matrix layer, adjacent first offset marker pair in the present embodiment If the difference of spacing L11 is too small between spacing L21 and the adjacent reference mark 121 between 221, to the black matrix layer shape It influences less, the formation process difficulty of second mask plate 200 may be will increase instead, to increase institute at the raising of quality The formation cost of the second mask plate 200 is stated, and then the increased costs of the black matrix layer can be caused.

As shown in Figure 8 and Figure 9, in the present embodiment, the external zones 202 is side's annular, the first offset marker group 220 Quantity be 4, be located at the corner of 200 external zones 202 of the second mask plate.

Multiple first offset marker groups 220 are set on second mask plate 200 of the external zones 202, and And make the way of the corner in the multiple first offset marker group, 220 annular peripheral area, the side of being distributed in 202, multiple can be made One offset marker group 220 is uniformly distributed on second mask plate 200, and corresponding position on first mask plate 100 Place is also equipped with the reference mark group 120, when alignment, make the multiple first offset marker group 220 simultaneously with institute It states multiple reference mark groups 120 and realizes alignment one by one, covered so as to effectively improve second mask plate 200 and described first The alignment precision of diaphragm plate 100；And the multiple first offset marker group 220 and the multiple reference mark group 120 are equal respectively It is even to be distributed on second mask plate 200 and first mask plate 100, when the multiple first offset marker group, 220 He When the multiple reference mark group 120 is aligned simultaneously, additionally it is possible to effectively reduce first mask plate 100 and second exposure mask The probability to relatively rotate between plate 200 is conducive to the reduction for being directed at difficulty, is conducive to the raising of alignment precision.

As shown in figure 8, the first offset marker group 220 includes the first lateral shift mark group 220x in the present embodiment With first longitudinal direction offset marker group 220y, the first offset marker of the first lateral shift mark group 220x is to 221 along first Direction X arrangement, the first offset marker of the first longitudinal direction offset marker group 220y is to 221 Y arrangements in a second direction.

It is shown in conjunction with Fig. 7 and Fig. 8 such as Fig. 5, on first mask plate 100, the first lateral shift mark group 220x In positive throwing of first offset marker to two the first offset marker 221m of 221 (as shown in virtual coil 921x in Fig. 5) Shadow is symmetrically located in corresponding 121 two sides of reference mark in the lateral fiducial markings group 120x.In first mask plate 100 On, in first longitudinal direction offset marker group 220y first offset marker to 221 (as shown in virtual coil 921y in Fig. 5) two The orthographic projection of a first offset marker 221m is symmetrically located in 121 liang of corresponding reference mark in longitudinal reference mark group 120y Side.

The first offset marker in the first lateral shift mark group 220x is to 221 and the lateral fiducial markings group Reference mark 121 in 120x matches, for second graph 210 and first figure 110 described in scale along first direction X Relative displacement；The first offset marker in the first longitudinal direction offset marker group 220y is to 221 and longitudinal reference mark The reference mark 121 of group 120y matches, and is used for second graph 210 described in scale and first figure 110 Y in a second direction Relative displacement.

So passing through the lateral fiducial markings group 120x and the first lateral shift mark group 220x and described vertical It, can be to parallel first mask plate, 100 surface to reference mark group 120y and the first longitudinal direction offset marker group 220y Interior any relative displacement carries out scale, so as to effectively realize the formation of different line widths, different line-spacing targeted graphicals, is conducive to Process costs are reduced, colored optical filtering substrates cost is controlled.

Specifically, the second graph 210 on second mask plate 200 is arranged in array, the first direction X is The line direction of 210 array of second graph, the second direction Y are the column direction of 210 array of second graph, that is, It says, the first offset marker in the first lateral shift mark group 220x is to 221 along the row side of 210 array of second graph To arrangement, the first offset marker in the longitudinal direction reference mark group 120y is to 221 along the column side of 210 array of second graph To arrangement.

When the first offset markers different in the first lateral shift mark group 220x are to 221 and the lateral fiducial markings In group 120x when the alignment of corresponding reference mark 121, relatively described first figure 110 of the second graph 210 occurs along first The displacement of direction X can make formed targeted graphical change along the size x1 of line direction, that is, formed black matrix is along first The line-spacing of direction X changes, additionally it is possible to so that the spacing x2 between formed targeted graphical line direction is changed, that is, be formed Black matrix changes along the line width of first direction X；When the first offset of difference mark in the first longitudinal direction offset marker group 220y When note is aligned to 221 with corresponding reference mark 121 in longitudinal reference mark group 120y, the second graph 210 is opposite The displacement of Y in a second direction occurs for first figure 110, and formed targeted graphical can be made to occur along the size y1 of column direction The line-spacing of variation, that is, formed black matrix Y in a second direction changes, additionally it is possible to make between formed targeted graphical column direction Spacing x2 change, that is, the line width of formed black matrix Y in a second direction changes.

So passing through the lateral fiducial markings group 120x and the first lateral shift mark group 220x and described vertical It, being capable of second graph 210 and described described in scale to reference mark group 120y and the first longitudinal direction offset marker group 220y Relative displacement of one figure 110 in parallel first mask plate, 100 surface plane, to be able to achieve different line widths, difference The formation of line-spacing targeted graphical, compared with forming different line widths, the technical solution of line-spacing targeted graphical using different mask plates, energy The enough effective quantity for reducing mask plate, is conducive to the reduction of cost, and then be conducive to the control of the colored optical filtering substrates cost System.

As shown in figure 9, first offset marker includes two spaced first offsets to 221 in the present embodiment Marking 221m, the first offset marker 221m is strip, and the first offset marker 221m is in first mask plate 100 On orthographic projection it is parallel with corresponding reference mark 121 (as shown in Figure 5).

The first offset marker 221m and the reference mark 121 are disposed as to the way of strip, it can be in reality While the existing second graph 210 and first figure 110 are aligned, the second graph 210 and first figure are prevented Relative displacement occurs between shape 110, so as to effectively improve the second graph 210 and first figure 110 alignment Precision is conducive to the improvement of manufacturing yield and device performance.

Specifically, the extending direction of the first offset marker 221m is mutually perpendicular to orientation.Specifically, described The first offset marker arranges 221 the first offset marker 221m along the first direction X in one lateral shift mark group 220x, Extend along the second direction Y；The first offset marker marks 221 the first offset in the first longitudinal direction offset marker group 220y Note 221m is arranged along the second direction Y, is extended along the first direction X.

In the present embodiment, multiple first offset markers are placed equidistant with to 221 in the first offset marker group 220.Tool Body, first offset marker arranged in the same direction is to 221 equidistant arrangements, that is to say, that first lateral shift Multiple first offset markers in mark group 220x are equal to being spaced between 221, are L21；The first longitudinal direction offset marker Multiple first offset markers in group 220y are equal to being spaced between 221, are L21.

Due to first offset marker to 221 two the first offset marker 221m on first mask plate 100 Orthographic projection it is parallel with corresponding reference mark 121, so multiple first offset markers pair in the first offset marker group 220 221 the first offset marker 221m is mutually parallel.

Specifically, first offset marker 221m is mutually put down in the first offset marker arranged in the same direction is to 221 Row, that is to say, that in the first lateral shift mark group 220x, the first offset marker 221m is mutually parallel；Described first In vertical misalignment mark group 220y, the first offset marker is mutually parallel to 221.

It should be noted that in the present embodiment, in the first offset marker group 221 two the first offset marker 221m it Between the ratio of interval D 2 (as shown in Figure 9) and the 121 size W of reference mark be greater than 1, be less than or equal to 1.2.

As shown in figure 5, when alignment, on first mask plate 100, first offset marker is to two in 221 the The projection of one offset marker 221m is symmetrically in the two sides of corresponding reference mark.So in the first offset marker group 221 Between two the first offset marker 221m the ratio of interval D 2 and the 121 size W of reference mark should not it is too small also should not be too big.

First offset marker is to interval D 2 and the reference mark between two the first offset marker 221m in 221 If the ratio of 121 size W is too small, it is spaced between two the first offset marker 221m in the first offset marker group 221 D2 is too small, may will affect first offset marker to the alignment function between 221 and the reference mark 121；Described One offset marker to the ratio of interval D 2 and the 121 size W of reference mark between two the first offset marker 221m in 221 such as Fruit is too big, then interval D 2 is excessive between two the first offset marker 221m in the first offset marker group 221, may will affect First offset marker is to the precision being aligned between 221 and the reference mark 121.

In the present embodiment, in the first offset marker group 220 all first offset markers to 221 the first offset marker 221m is equal in length, and so as to effectively improve the regularity and uniformity of figure on second mask plate 200, is conducive to The alignment difficulty for reducing the mask assembly, is conducive to the improvement of manufacturing yield He formed device performance.

In addition, the length of the first offset marker 221m is less than the length of the reference mark 121.Make described first partially It moves label 221m length and is less than 121 length of reference mark, can be improved the first offset marker 221m described in alignment procedures Technology difficulty is advantageously reduced, is conducive to so as to which alignment difficulty is effectively reduced with the identification of the reference mark 121 The raising of manufacturing yield and device performance.

In the present embodiment, as shown in figure 5, on first mask plate 100, the first offset marker 221m orthographic projection One end is flushed with one end of the reference mark 121, therefore in the aligning process, can be directly from the position of label and opposite ruler It is very little directly to differentiate the first offset marker 221m and the reference mark 121, so as to which alignment difficulty is effectively reduced, favorably In the raising of manufacturing yield and device performance.

With reference to Figure 10 and Figure 11, third mask plate 300 is shown in mask assembly embodiment of the present invention shown in Fig. 4 along the side A To overlooking structure diagram.Wherein, Figure 11 is structure in dotted line frame 390 in mask assembly embodiment of the present invention shown in Figure 10 Enlarged diagram.

In the present embodiment, first figure 110 and the second graph 210 can only targeted graphical described in composition part, Therefore the third mask plate 300 and first mask plate 100 and overlapping setting (such as Fig. 4 and figure of second mask plate 200 Shown in 5), it is complete to supplement for being matched with first mask plate 100 and second mask plate 200, it constitutes complete The targeted graphical；Further, it is also possible to by the way that phase occurs between first mask plate 100 and second mask plate 200 To displacement, to make to generate opposite position between the third figure 310 and first figure 110 and the second graph 210 It moves, further the line width of the formed targeted graphical of adjustment, line-spacing.

Therefore the third mask plate, can be with first mask plate 100 and second mask plate 200 as supplement It matches, constitutes the complete targeted graphical, so as to achieve the purpose that reduce mask plate quantity, reduce manufacturing cost.

As shown in Figure 10, second mask plate 200 is similar, and the third mask plate 300 also includes for being third figure Shape 310 provides the graph area 301 of load-bearing surface and for providing the external zones of load-bearing surface for the second offset marker group 320 302。

Wherein, corresponding with graph area 101 on first mask plate 100 and external zones 102, the third mask plate 200 graph area 301 is also rectangle or square, positioned at the central area of the third mask plate 300；The third is covered The external zones 302 of diaphragm plate 200 is side's annular around the graph area 301.

The third figure 310 is located near 210 corresponding position of the first figure, is used for and first figure 110 It matches with the second graph 210 with the complete targeted graphical.

In the present embodiment, first figure 110 and the second graph 210 are rectangle, complete in order to constitute The targeted graphical, the third figure 310 are square.But with 210 class of first figure 110 and the second graph Seemingly, the present invention to the concrete shape of the third figure 310 without limitation.In other embodiments of the invention, when the target figure When shape or the shape of first figure, the second graph change, the shape of the third figure also changes therewith It is square, rule or the irregular shape such as diamond shape or even circle.Since the third figure is for constituting the target figure Picture, therefore the shape of the third figure is identical as the shape of the targeted graphical.

Specifically, on first mask plate 100, the orthographic projection of the third figure 310 and first figure 110 It is adjacent to be perhaps at least partly overlapped or the orthographic projection of the third figure 310 is adjacent with the orthographic projection of the second graph 210 Or it is at least partly overlapped.So the third figure 310 is matched with first figure 110 and the second graph 210, With enough at the complete targeted graphical.

As shown in figure 5, in the present embodiment, the third figure 310 and first figure 110 and the second graph 210 partially overlap, and combine the missing of later vertex to supplement first figure 110 and the second graph 210, from And constitute the complete targeted graphical.

Similar with second graph 210 on second mask plate 200, also having 8 on the third mask plate 300 is in The third figure 310 of array arrangement, it is corresponding with first figure 110 on first mask plate 100.

The second offset marker group 320 is set near position corresponding with the reference mark group 120, for The reference mark group 120 is aligned, thus realize the alignment between the third mask plate 300 and first mask plate 100, And then the third figure 310 is made to play the role of supplement, to constitute the complete targeted graphical.

The way for being directed at the second offset marker group 320 directly with the reference mark group 120, can be effective Avoid the first offset marker group 220 and 120 alignment error of reference mark group right to the second offset marker group 320 Quasi- influence, advantageously reduces the precision being aligned between the second offset marker group 320 and the reference mark group 120, has Conducive to the precision for improving formed targeted graphical, be conducive to the improvement of manufacturing yield and device performance.

It is similar to 221 with the first offset marker on second mask plate 200, the second offset marker group 320 In adjacent second offset marker to spacing between spacing L31 (as shown in figure 11) and the adjacent reference mark 121 between 321 L11 (as shown in Figure 7) is unequal.

So when the second different offset markers is aligned to 321 with corresponding reference mark 121, the third mask plate Relative position is not identical between 300 and first mask plate 100, to make the third figure 310 and first figure Relative displacement is generated between shape 110；Therefore second offset marker can also be matched to 321 with the reference mark 121, It can be used in relative displacement between third figure 310 described in scale and first figure 110 and the second graph 120 to close System so as to realize the formation of different line widths, different line-spacing targeted graphicals, and then can reduce the quantity of mask plate, favorably In reducing process costs, colored optical filtering substrates cost is controlled.

Specifically, spacing L31 is less than the adjacent base between adjacent 321 pairs of second offset marker in the present embodiment Spacing L11 between fiducial mark note 121, to make the direction of relative displacement between the third figure 310 and first figure 110 It is consistent to 321 present position with the second corresponding offset marker, to reduce the technology difficulty of alignment, improve manufacturing yield And device performance.

It is similar to 321 with the first offset marker in the first offset marker group 220, adjacent second offset marker Between 321 pairs between spacing L31 and the adjacent reference mark 121 difference of spacing L11 in 1 μm to 5 μ ms, thus Under the premise of guaranteeing formed targeted graphical line width, line-spacing variation precision, the design and manufacture for controlling the third mask plate 300 are difficult Degree and cost, control the cost of the black matrix layer.

Similar, corresponding with the reference mark group 120, the quantity of the second offset marker group 320 is 4, point Not Wei Yu 300 external zones 302 of third mask plate corner, covered with improving the third mask plate 300 and described first The alignment precision of diaphragm plate 100 reduces and relatively rotates odds.

Likewise, as shown in figure 8, the second offset marker group 320 is marked including the second lateral shift in the present embodiment Group 320x and second longitudinal direction offset marker group 320y, the second offset marker of the second lateral shift mark group 320x is to 321 It is arranged along first direction X, the second offset marker of the second longitudinal direction offset marker group 320y is to 321 Y arrangements in a second direction.

It is shown in conjunction with Fig. 7 and Fig. 8 such as Fig. 5, on first mask plate 100, the second lateral shift mark group Second offset marker is to two the second offset marker 321m of 321 (as shown in virtual coil 921x in Fig. 5) in 320x Orthographic projection is symmetrically located in corresponding 121 two sides of reference mark in the lateral fiducial markings group 120x.In first exposure mask On plate 100, second offset marker is to 321 (such as institute in virtual coil 921y in Fig. 5 in second longitudinal direction offset marker group 320y Show) the orthographic projection of two the second offset marker 321m be symmetrically located in corresponding reference mark in longitudinal reference mark group 120y 121 two sides.

The second offset marker in the second lateral shift mark group 320x is to 321 and the lateral fiducial markings group Reference mark 121 in 120x matches, for third figure 310 and first figure 110 described in scale along first direction X Relative displacement；The second offset marker in the second longitudinal direction offset marker group 320y is to 321 and longitudinal reference mark The reference mark 121 of group 120y matches, and is used for third figure 310 described in scale and first figure 110 Y in a second direction Relative displacement.

So the cooperation of the second offset marker group 320 and the reference mark group 120, it can be to parallel described first Any relative displacement carries out scale in 100 surface of mask plate, so as to effectively realize different line widths, different line-spacing targeted graphicals Formation.

Specifically, similar with second mask plate 200, the third figure 310 is on the third mask plate 300 Array arrangement, the first direction X are the line direction of 310 array of third figure, and the second direction Y is the third figure The column direction of 310 array of shape.The second offset marker in the second lateral shift mark group 320x is to 321 along the third figure The line direction of 310 array of shape arranges, and the second offset marker in the longitudinal direction reference mark group 120y is to 321 along the third figure The column direction of 310 array of shape arranges.

When relatively described first figure 110 of the second graph 210 occurs along first direction X displacement, formed target figure When shape changes along the size x1 of line direction, different second offset markers pair in the second lateral shift mark group 320x can be made 321 are aligned with the realization of corresponding reference mark 121, so that the third figure 310 be made to be moved to suitable position along line direction Place, supplements first figure 110 and the second graph 210；When relatively described first figure of the second graph 210 Shape 110 occurs Y in a second direction and is displaced, and when formed targeted graphical changes along the size y1 of column direction, can make second Different second offset markers are aligned to 321 with the realization of corresponding reference mark 121 in vertical misalignment mark group 320y, to make institute State third figure 310 and be moved to suitable position along column direction, to first figure 110 and the second graph 210 into Row supplement.

So passing through the lateral fiducial markings group 120x and the second lateral shift mark group 320x and described vertical To reference mark group 120y and the second longitudinal direction offset marker group 320y, can third figure 310 described in scale in parallel institute The relative displacement in 100 surface plane of the first mask plate is stated, so as to make the third figure 310 to first figure 110 and the constituted figure of the second graph 210 supplemented, to constitute the complete targeted graphical.

Similar to 221 with first traversal marker, second offset marker includes two spaced the to 321 Two offset marker 321m, the second offset marker 321m are strip, and the second offset marker 321m is covered in the third Orthographic projection on diaphragm plate 300 is parallel with corresponding reference mark 121 (as shown in Figure 5), so as to realize alignment while, Prevent relative displacement, to improve the precision of alignment.

Likewise, the extending direction of the second offset marker 321m is mutually perpendicular to orientation, i.e., described second is horizontal Into offset marker group 320x, the second offset marker arranges 321 the second offset marker 321m along the first direction X, along institute State second direction Y extension；In the second longitudinal direction offset marker group 320y the second offset marker to 321 the second offset marker 321m is arranged along the second direction Y, is extended along the first direction X.

In the present embodiment, in the second offset marker group 320 multiple second offset markers to 321 equidistant arrangement, and 321 the second offset marker 321m is arranged in parallel in second offset marker.Specifically, arrange in the same direction described Two offset markers are to 321 equidistant arrangements, and second offset marker arranged in the same direction is to the second offset marker in 321 321m is parallel to each other.

In the present embodiment, interval D 3 and institute between two the second offset marker 321m in the second offset marker group 321 It states the ratio of 121 size of reference mark and is being greater than 1, be less than or equal to 1.2, take into account alignment function and alignment precision to reach Purpose.

In addition, in the first offset marker group 220 all first offset markers to 221 the first offset marker 221m long Degree is equal, and, the length of the first offset marker 221m is less than the length of the reference mark 121, so as to protect It demonstrate,proves on the third mask plate 300 under the premise of image regularity and uniformity, improves distinguishing for the second offset marker 321m Knowledge and magnanimity.

It should be noted that as shown in figure 5, the reference mark 121 is strip in the present embodiment；Described first partially Moving label 221m is strip；The second offset marker 321m is strip；On first mask plate 100, described first One end of offset marker 221m orthographic projection is flushed with one end of the reference mark 121, and the second reference mark 321m is just thrown One end of shadow is flushed with the other end of the reference mark 121.

On first mask plate 100, mark the orthographic projection of the first offset marker 221m and second offset The orthographic projection of note 321m is flushed with the both ends of the reference mark 121 respectively, can be effectively improved in alignment procedures, described first The identification of offset marker 221m and the second offset marker 321m, directly can directly divide from present position and relative size The first offset marker 221m, the second offset marker 321m and the reference mark 121 are distinguished, so as to effectively drop Low alignment difficulty, is conducive to the raising of manufacturing yield and device performance.

Correspondingly, the present invention also provides a kind of exposure methods.

Specifically, showing the flow diagram of one embodiment of exposure method of the present invention with reference to Figure 12.

The exposure method includes:

Step S100 provides mask assembly of the invention；

Step S200 obtains the first map migration amount according to the targeted graphical and first figure and second graph；

Step S300 loads first mask plate；

Step S400 loads second mask plate；

Step S500 carries out the first contraposition processing to second mask plate, and the first contraposition processing includes: according to institute State the first map migration amount, select first offset marker to the telltale mark pair as the second mask plate, and make it is described fixed Orthographic projection of two the first offset markers of position label pair on first mask plate is symmetrically located in corresponding reference mark Two sides, to realize the positioning of second mask plate；

Step S600 utilizes first mask plate and institute after carrying out the first contraposition processing to second mask plate The second mask plate is stated to be exposed the layer to be exposed.

Below with reference to structural schematic diagram, the technical solution for exposure method embodiment that the present invention will be described in detail.

It is exposed it should be noted that the exposure method treats exposure layer 001 to form the figure with targeted graphical Shape layer, the layer 001 to be exposed are negativity photoresist layer.Specifically, the exposure method is to described to be exposed in the present embodiment Layer 001 be exposed after be formed by patterned layer be black matrix layer, therefore as shown in figure 3, the targeted graphical with it is described black The shape of 40 split shed 41 of matrix layer is identical.

Step S100 is executed, mask assembly of the invention is provided in conjunction with reference Fig. 4 to Figure 11 with reference to Figure 12.

The mask assembly is mask assembly of the invention.The specific technical solution of the mask assembly is covered with reference to aforementioned The embodiment of membrane module, details are not described herein by the present invention.

After the mask assembly is provided, step S200 is executed, according to the targeted graphical (as shown in Figure 3) and described the One figure 110 (as shown in Figure 6) and the second graph (as shown in Figure 8) obtain the first map migration amount.

It should be noted that as shown in figure 5, the multiple first offset marker is in 221 (as shown in Figure 8 and Figure 9) One is first zero offset marker to (as shown in virtual coil 921x in Fig. 5 and virtual coil 921y), and the first zero is inclined It moves orthographic projection of two the first offset marker 221m of label pair on first mask plate 100 and is symmetrically located in corresponding base When fiducial mark remembers 121 two sides, first figure 110 and the second graph 120 constitute first zero figure (dotted line in such as Fig. 5 Shown in frame 211).

As shown in Figures 6 to 9, the reference mark group 120 includes the lateral fiducial markings group 120x and the longitudinal direction Reference mark group 120y.

Specifically, in the first offset marker group 220, the first offset marker for arranging in the same direction to 221 number Amount is 2n+1, wherein (n+1)th the first offset marker is the first zero offset marker pair to 221, and n is arbitrarily to be greater than Or the integer equal to 1.As shown in figure 9, the first lateral shift mark group 220x and the first longitudinal direction offset marker group In 220y, first offset marker is 11 to 221 quantity, so the first lateral shift mark group 220x and institute It states in first longitudinal direction offset marker group 220y, the 6th the first offset marker (virtual coil 922x and virtual coil in such as Fig. 9 to 221 Shown in 922y) it is the first zero offset marker pair.

So as shown in figure 5, working as the first offset marker 221m and corresponding base of the first zero offset marker pair When fiducial mark note 121 aligns, i.e., two the first offset marker 221m of the described first zero offset marker pair are covered described first When orthographic projection on diaphragm plate 100 is symmetrically located in corresponding 121 two sides of reference mark, first figure 110 and described second Figure 210 constitutes first zero figure (as shown in dotted line frame 211 in Fig. 5).

The step of obtaining the first map migration amount includes: according to the first zero figure and the targeted graphical Difference obtains the first map migration amount.

With reference to Figure 13, shows and first map migration is obtained according to the first zero figure and the targeted graphical The structural schematic diagram of amount.

Specifically, the first map migration amount includes the first lateral figure offset and first longitudinal direction map migration amount.

As shown in figure 13, obtain the first map migration amount the step of include: according to the targeted graphical 212 with it is described The difference on X in a first direction of first zero figure 213, obtains the described first lateral figure offset X a；According to the target Figure 212 and difference of the first zero figure 213 on second direction Y, obtain the first longitudinal direction map migration amount Ya, The second direction Y and the first direction X are perpendicular.

It should be noted that as shown in Fig. 4, Fig. 5 and Figure 13,210 structures of first figure 110 and the second graph At first zero figure 213 be only the targeted graphical 212 a part, therefore as shown in Fig. 4, Fig. 5, Figure 10 and Figure 12, In the present embodiment, the mask assembly further include: third mask plate 300.

The specific technical solution of the third mask plate 300, with reference to the embodiment of aforementioned mask assembly, the present invention is herein not It repeats again.

The exposure method further include: after the mask assembly is provided, according to the targeted graphical, the first zero Figure and the third figure obtain second graph offset.

As shown in figure 5, multiple second offset markers are the second zero migration label pair to one in 321, described second Orthographic projection of two the second offset marker 321m of zero migration label pair on first mask plate 100 is symmetrically located in phase When corresponding 121 two sides of reference mark, the position of the third figure 310 orthographic projection on first mask plate 100 is second Dead-center position 214.

As shown in Figure 10 and Figure 11, the second offset marker group 320 includes the second lateral shift mark group 320x With the second longitudinal direction offset marker group 320y.

Specifically, in the second offset marker group 320, the second offset marker for arranging in the same direction to 221 number Amount is 2n+1, wherein (n+1)th the second offset marker is second zero migration label pair to 321, and n is arbitrarily to be greater than Or the integer equal to 1.As shown in figure 9, the second lateral shift mark group 320x and the second longitudinal direction offset marker group In 320y, second offset marker is 11 to 321 quantity, so the second lateral shift mark group 320x and institute It states in second longitudinal direction offset marker group 320y, the 6th the second offset marker (virtual coil 932x and virtual coil in such as Fig. 9 to 321 Shown in 932y) it is second zero migration label pair.

So as shown in figure 5, working as the second offset marker 321m and corresponding base of second zero migration label pair When fiducial mark note 121 aligns, i.e., two the second offset marker 321m of the described second zero migration label pair are covered described first When orthographic projection on diaphragm plate 100 is symmetrically located in corresponding 121 two sides of reference mark, the third figure 310 is described first The position of orthographic projection is the second dead-center position 214 on mask plate 100.

3 are continued to refer to figure 1, the second graph offset includes that the second lateral figure offset and second longitudinal direction figure are inclined Shifting amount.

The step of obtaining the second graph offset include:

According to the difference of the targeted graphical 212 and the first zero figure 213, the offset of the third figure is obtained Position 215；According to the difference on the deviation post 215 and second dead-center position 214 in a first direction X, described in acquisition Second lateral figure offset X b；According to the deviation post 215 and second dead-center position 214 on second direction Y Difference obtains the second longitudinal direction map migration amount Yb.

It should be noted that as shown in figure 13, in the present embodiment, along first direction X, the third figure 310 is not sent out Raw movement, so the second transverse direction figure offset X b is zero.

2 are continued to refer to figure 1, in conjunction with reference Fig. 4, step S300 is executed, loads first mask plate 100.

In the present embodiment, the layer 001 to be exposed forms black matrix layer after exposing；So loading first mask plate 100 the step of includes: that first mask plate 100 is loaded into exposure device.

First mask plate 100 is loaded into the specific technical solution of step in exposure device, it is same as the prior art, Details are not described herein by the present invention.

In other embodiments of the invention, in other embodiments of the invention, subsequent colour is formed after the layer exposure to be exposed Other film layers such as photoresist layer, spacer column.The exposure method further include: after loading first mask plate, to described first Mask plate carries out film layer registration process.

Alignment mark figure (not shown), the layer to be exposed are additionally provided on the external zones of first mask plate Upper to have film layer alignment mark, the film layer registration process includes: to make the alignment mark figure and the film layer alignment mark Alignment is realized, to realize the positioning of first mask plate.

It should be noted that exposure method of the present invention is to loading first mask plate 100 and obtains first figure The sequencing of offset and the acquisition second graph offset is without limitation.Specifically, described first can obtained After map migration amount and the second graph offset, first mask plate is loaded；The mask set can also provided After part, it is directly loaded up first mask plate, obtains the first map migration amount later；Described first can also be loaded to cover Diaphragm plate and acquisition the first map migration amount carry out simultaneously.

2 are continued to refer to figure 1, in conjunction with reference Fig. 4 and Fig. 5, step S400 is executed, loads second mask plate 200.

Specifically, the step of loading the second mask plate 200 includes: that second mask plate 200 is loaded into exposure In device.Second mask plate 200 is loaded into the specific technical solution of step in exposure device, it is same as the prior art, Details are not described herein by the present invention.

Later, 2 are continued to refer to figure 1, step S500 is executed, the first contraposition processing is carried out to second mask plate, it is described First contraposition processing includes: to select first offset marker to as the second mask plate according to the first map migration amount Telltale mark pair, and make orthographic projection pair of two the first offset markers of the telltale mark pair on first mask plate What is claimed is located at corresponding reference mark two sides, to realize the positioning of second mask plate.

As shown in Figures 6 to 9, the reference mark group 120 includes lateral fiducial markings group 120x and longitudinal reference mark Group 120y, the first offset marker group 220 include and the first lateral shift mark group 220x and first longitudinal direction offset marker group 220y。

In conjunction with reference Fig. 4 and Figure 14, wherein Figure 14 shows the first contraposition in exposure method embodiment shown in Figure 12 and handles Partial top structural schematic diagram of the mask assembly along the direction A later.

So as shown in figure 14, the first contraposition processing includes: according to the described first lateral figure offset X a, in institute State selected in the first lateral shift mark group 220x first offset marker to (as shown in virtual coil 923x in Figure 14) as The located lateral label pair of second mask plate 200, and two the first offset marker 221m of the located lateral label pair is made to exist Orthographic projection on first mask plate 100 is symmetrically located in 121 liang of corresponding reference mark in lateral fiducial markings group 120x Side；According to the first longitudinal direction map migration amount Ya, selected in the first longitudinal direction offset marker group 220y one first partially Longitudinal register label pair of the label to (as shown in virtual coil 923y in Figure 14) as the second mask plate 200 is moved, and is made described vertical Orthographic projection of two the first offset marker 221m on first mask plate 100 to telltale mark pair is symmetrically located in longitudinal direction Corresponding 121 two sides of reference mark in reference mark group 120y.

Since adjacent first offset marker is to spacing between spacing L21 and the adjacent reference mark 121 between 221 L11 is unequal；Therefore with the first zero offset marker to first offset marker that for starting point, is often staggered to 221 and institute When corresponding reference mark 121 realizes alignment, the second graph 210 and the constituted figure of first figure 110 with it is described Difference and first offset marker between first zero figure are to spacing L21 and the adjacent reference mark 121 between 221 Between spacing L11 difference it is related.

So the step of selection 200 located lateral of the second mask plate label pair includes: laterally inclined according to described first The first offset marker described in mark group 220x is moved to adjacent in the spacing L21 and lateral fiducial markings group 120x between 221 Between the reference mark 121 between spacing L11 spacing difference, obtain the first lateral unit offset amount (L11-L21)；According to The quotient of the first transverse direction figure offset X a and the first lateral unit offset amount (L11-L21), obtain described first partially Move the lateral run-out number nx=Xa/ (L11-L21) of label pair；One is selected in the first lateral shift mark group 220x First offset marker to 221 as located laterals label pair, located lateral label to first lateral shift First zero offset marker in mark group 220x is at a distance of the lateral run-out number nx.

Similar, selecting the step of 200 longitudinal register of the second mask plate label pair includes: according to the first longitudinal direction First offset marker described in offset marker group 220y is to phase in spacing L21 between 221 and longitudinal reference mark group 120y Between the adjacent reference mark 121 between spacing L11 spacing difference, obtain first longitudinal direction unit offset amount (L11-L21)；Root According to the quotient of the first longitudinal direction map migration amount Ya and the first longitudinal direction unit offset amount (L11-L21), described first is obtained The longitudinal of offset marker pair deviates number ny=Ya/ (L11-L21)；One is selected in the first longitudinal direction offset marker group 220x A first offset marker is to 221 as longitudinal register label pair, and the longitudinal register label is to inclined with the first longitudinal direction The first zero offset marker in mark group 220y is moved at a distance of longitudinal deviation number ny.

It should be noted that as shown in Figure 6 and Figure 8, the reference mark group 120 and the first offset marker group 220 Quantity be 4, so to second mask plate 200 carry out first contraposition handle the step of in, 4 it is described first offset The first corresponding offset marker is the telltale mark pair to 221 in mark group 220, and the first contraposition processing makes institute Orthographic projection of two the first offset markers 221 of 4 telltale marks pair on first mask plate 100 is stated to be symmetrically located in Corresponding 121 two sides of reference mark, to realize the positioning of second mask plate 200.

In addition, in the present embodiment, in order to obtain the complete targeted graphical, the mask assembly further include: described the Three mask plates 300.

So after executing step S500, after carrying out the first contraposition processing to second mask plate 200, described in loading Third mask plate 300.

Specifically, the step of loading third mask plate 300 includes: that the third mask plate 300 is loaded into exposure In device.The third mask plate 300 is loaded into the specific technical solution of step in exposure device, it is same as the prior art, Details are not described herein by the present invention.

2 are continued to refer to figure 1, in conjunction with reference Figure 14, after loading the third mask plate 300, to the third mask plate 300 carry out the second contraposition processing, and the second contraposition processing includes: to select one second according to the second graph offset Offset marker makes two the second offset markers of the telltale mark pair in institute the telltale mark pair as third mask plate It states the orthographic projection on the first mask plate and is symmetrically located in corresponding reference mark two sides, to realize determining for the third mask plate Position.

As shown in Figure 10 and Figure 11, the second offset marker group 320 include with the second lateral shift mark group 320x and Second longitudinal direction offset marker group 320y.

So as shown in figure 14, the second contraposition processing includes: according to the described second lateral figure offset X b, in institute State selected in the second lateral shift mark group 320x second offset marker to (as shown in virtual coil 924x in Figure 14) as The located lateral label pair of third mask plate 300, and two the second offset marker 321m of the located lateral label pair is made to exist Orthographic projection on first mask plate 100 is symmetrically located in 121 liang of corresponding reference mark in lateral fiducial markings group 120x Side；According to the second longitudinal direction map migration amount Yb, selected in the third vertical misalignment mark group 320y one second partially Longitudinal register label pair of the label to (as shown in virtual coil 924y in Figure 14) as third mask plate 300 is moved, and is made described vertical Orthographic projection of two the second offset marker 321m on first mask plate 100 to telltale mark pair is symmetrically located in longitudinal direction Corresponding 121 two sides of reference mark in reference mark group 120y.

Since adjacent second offset marker is to spacing between spacing L31 and the adjacent reference mark 121 between 321 L11 is unequal；Therefore it is marked to second offset marker that for starting point, is often staggered with second zero migration to 321 and institute When corresponding reference mark 121 realizes alignment, the third figure 210 projected position and institute on first mask plate 100 The difference between the second dead-center position 214 and adjacent second offset marker are stated to spacing L31 and the adjacent base between 321 The difference of spacing L11 is related between fiducial mark note 121.

So the step of selecting 300 located lateral of third mask plate to mark includes: according to second lateral shift Second offset marker described in mark group 320x is to adjacent institute in the spacing L31 and lateral fiducial markings group 120x between 321 The difference of spacing between spacing L11 between adjacent reference label 121 is stated, the second lateral unit offset amount (L11-L31) is obtained；Root According to the quotient of the second transverse direction figure offset X b and the second lateral unit offset amount (L11-L31), described second is obtained The lateral run-out number mx=Xb/ (L11-L31) of offset marker pair；One is selected in the second lateral shift mark group 320x A second offset marker to 321 as located lateral label pair, located lateral label to described second laterally partially The second zero migration label in mark group 320x is moved at a distance of the lateral run-out number mx.

Similar, selecting the step of 300 longitudinal register of the third mask plate label pair includes: according to the second longitudinal direction Second offset marker described in offset marker group 320y is to phase in spacing L31 between 321 and longitudinal reference mark group 120y Between the adjacent adjacent reference label 121 between spacing L11 spacing difference, obtain second longitudinal direction unit offset amount (L11- L31)；According to the quotient of the second longitudinal direction map migration amount Ya and the second longitudinal direction unit offset amount (L11-L31), institute is obtained It states the longitudinal of the second offset marker pair and deviates number my=Yb/ (L11-L31)；In the second longitudinal direction offset marker group 320x Select second offset marker to 321 as longitudinal register label pair, longitudinal register label is to described second The second zero migration label in vertical misalignment mark group 320y is at a distance of longitudinal deviation number my.

It should be noted that as shown in figs. 6 and 10, the quantity of the second offset marker group 320 is also 4, so It is corresponding in 4 the second offset marker groups 320 in the step of carrying out the second contraposition processing to the third mask plate 300 The second offset marker be the telltale mark pair to 321, second contraposition processing makes 4 telltale marks pair Orthographic projection of two the second offset markers 321 on first mask plate 100 is symmetrically located in corresponding reference mark 121 Two sides, to realize the positioning of the third mask plate 300.

2 are continued to refer to figure 1, in conjunction with reference Fig. 4, executes step S600, the first contraposition is carried out to second mask plate 200 After processing, the layer 001 to be exposed is exposed using the mask assembly.

In the present embodiment, the mask assembly further include: the third exposure mask 300；So using the mask assembly into The step of row exposure includes: right using first mask plate 100, second mask plate 200 and the third mask plate 300 The layer to be exposed 001 is exposed.

It is exposed step to the layer 001 to be exposed using the mask assembly to refer to during single exposure, together When be exposed using the mask assembly for including at least first mask plate 100 and second mask plate 200, i.e. exposure light Line at least need to transmit after first mask plate 100 and second mask plate 200 could to the layer 001 to be exposed into Row exposure.

The layer 001 to be exposed is exposed after needing to transmit the mask assembly due to the exposure light, i.e., The exposure light at least needs to transmit first mask plate 100 and second mask plate 200 can be to described wait expose Photosphere 001 is exposed, so the energy of the exposure light cannot during being exposed to the layer 001 to be exposed Too small, i.e., the described exposure power should not be too small.

If the exposure power is too small, the exposure light is after transmiting the mask assembly, the exposure light The energy of line is too low, may will affect the exposure of the layer to be exposed 001, will affect the quality of formed patterned layer, may It will appear the degeneration of manufacturing yield and device performance.

So during being exposed to the layer 001 to be exposed, exposure power is greater than 40mJ/ in the present embodiment cm²。

Further, since the exposure components include at least first mask plate 100 and second mask plate 200, because On the direction on vertical first mask plate, 100 surface, the thickness of the mask assembly is greater than first mask plate 100 for this Or the thickness of second mask plate 200, so when being exposed to the layer 001 to be exposed, the exposure height (GAP) In 100 μm to 200 μ ms.

If the exposure height is too small, covering near the layer 001 to be exposed in the mask assembly will increase The probability that diaphragm plate is contacted with the layer 001 to be exposed, to will affect exposure quality, it is also possible to be caused to the mask assembly Damage；If the exposure height is too big, distance is excessive between the mask assembly and the layer to be exposed 001, also can shadow Exposure quality is rung, the patterned layer of high quality can not be obtained.

Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute Subject to the range of restriction.

Claims (19)

1. a kind of mask assembly, be exposed for treating exposure layer to form the patterned layer with targeted graphical, it is described to Exposure layer is negativity photoresist layer characterized by comprising

First mask plate including graph area and surrounds the external zones of the graph area, on the first mask plate of the graph area With the first figure, there is reference mark group, the reference mark group includes multiple etc. on the first mask plate of the external zones The reference mark of spacing setting；

Second mask plate, with the overlapping setting of first mask plate, second mask plate includes described in graph area and encirclement The external zones of graph area has second graph on the second mask plate of the graph area, for matching with first figure To form at least partly described targeted graphical, there is the first offset marker group on the second mask plate of the external zones, described the One offset marker group includes multiple first offset markers pair, the multiple first offset marker pair and the multiple reference mark one One is corresponding, and interval is less than spacing between the adjacent reference mark, Huo Zhexiang between adjacent first offset marker pair Interval is greater than spacing between the adjacent reference mark between adjacent first offset marker pair, and first offset marker is to packet Two spaced first offset markers are included, two of at least one the first offset marker pair in the first offset marker group Orthographic projection of first offset marker on first mask plate is symmetrically located in corresponding reference mark two sides.

2. mask assembly as described in claim 1, which is characterized in that spacing is less than between adjacent first offset marker pair Spacing between the adjacent reference mark.

3. mask assembly as claimed in claim 1 or 2, which is characterized in that spacing between adjacent first offset marker pair The difference of spacing is in 1 μm to 5 μ ms between the adjacent reference mark.

4. mask assembly as described in claim 1, which is characterized in that the reference mark group include lateral fiducial markings group and The reference mark of longitudinal reference mark group, the lateral fiducial markings group is arranged along first direction, the longitudinal direction reference mark group Reference mark arrange in a second direction, the first direction and the second direction are perpendicular；

The first offset marker group includes the first lateral shift mark group and first longitudinal direction offset marker group, and described first laterally First offset marker of offset marker group is arranged along the first direction, the first offset of the first longitudinal direction offset marker group Label is arranged along the second direction；

On first mask plate, the two first offsets mark of first offset marker pair in the first lateral shift mark group The orthographic projection of note is symmetrically located in corresponding reference mark two sides in lateral fiducial markings group；

On first mask plate, the two first offsets mark of first offset marker pair in first longitudinal direction offset marker group The orthographic projection of note is symmetrically located in corresponding reference mark two sides in longitudinal reference mark group.

5. mask assembly as described in claim 1, which is characterized in that covered with described second the graph area of first mask plate The graph area of diaphragm plate is square or rectangular, the external zones of the external zones of first mask plate and second mask plate The side's of being annular；

The quantity of the reference mark group is 4, is located at the corner of the first mask plate external zones；

The quantity of the first offset marker group is 4, is located at the corner of the external zones of second mask plate.

6. mask assembly as described in claim 1, which is characterized in that two first offset marks of the first offset marker centering It is spaced between note and is greater than 1 with the ratio of the reference mark size, be less than or equal to 1.2.

7. mask assembly as described in claim 1, which is characterized in that the reference mark is strip；

First offset marker is strip, orthographic projection of first offset marker on first mask plate and opposite Answer reference mark parallel.

8. mask assembly as claimed in claim 7, which is characterized in that multiple reference marks described in the reference mark group Equal length；First offset marker equal length of all first offset markers pair in first offset marker group.

9. mask assembly as claimed in claim 8, which is characterized in that the length of first offset marker is less than the benchmark The length of label.

10. mask assembly as claimed in claim 9, which is characterized in that on first mask plate, first offset marker One end of orthographic projection is flushed with one end of the reference mark.

11. mask assembly as described in claim 1, which is characterized in that further include: third mask plate, with first exposure mask Plate and the overlapping setting of second mask plate, the third mask plate include graph area and the periphery for surrounding the graph area Area, has third figure on the third mask plate of the graph area, and the third figure is used for and first figure and described Second graph matches to form the targeted graphical；There is the second offset marker group, institute on the third mask plate of the external zones Stating the second offset marker group includes multiple second offset markers pair, the multiple second offset marker pair and the multiple fiducial mark Note corresponds, and interval is less than spacing between the adjacent reference mark between adjacent second offset marker pair, or Interval is greater than spacing between the adjacent reference mark, second offset between adjacent second offset marker pair of person Label is to including two spaced second offset markers, at least one second offset marker in the second offset marker group Pair orthographic projection of two the second offset markers on first mask plate be symmetrically located in corresponding reference mark two sides.

12. mask assembly as claimed in claim 11, which is characterized in that the reference mark is strip；Described first partially It moves and is labeled as strip；Second offset marker is strip；

On first mask plate, one end of the first offset marker orthographic projection is flushed with one end of the reference mark, institute The one end for stating the second reference mark orthographic projection is flushed with the other end of the reference mark.

13. a kind of exposure method, be exposed for treating exposure layer to form the patterned layer with targeted graphical, it is described to Exposure layer is negativity photoresist layer characterized by comprising

Mask assembly as described in claim 1 is provided；

According to the targeted graphical and first figure and second graph, the first map migration amount is obtained；

Load first mask plate；

Load second mask plate；

First contraposition processing is carried out to second mask plate, the first contraposition processing includes: inclined according to first figure Shifting amount selects first offset marker to the telltale mark pair as the second mask plate, and makes the two of the telltale mark pair Orthographic projection of a first offset marker on first mask plate is symmetrically located in corresponding reference mark two sides, to realize State the positioning of the second mask plate；

After carrying out the first contraposition processing to second mask plate, the layer to be exposed is exposed using the mask assembly Light.

14. exposure method as claimed in claim 13, which is characterized in that one of the multiple first offset marker centering is First zero offset marker pair, two the first offset markers of the first zero offset marker pair are on first mask plate Orthographic projection when being symmetrically located in corresponding reference mark two sides, first figure and the second graph constitute the first zero Figure；

The first map migration amount includes the first lateral figure offset and first longitudinal direction map migration amount；

The step of obtaining the first map migration amount include:

According to the targeted graphical and the difference of the first zero figure in a first direction, the described first lateral figure is obtained Offset；

According to the targeted graphical and the difference of the first zero figure in a second direction, the first longitudinal direction figure is obtained Offset, the second direction and the first direction are perpendicular.

15. exposure method as claimed in claim 14, which is characterized in that the reference mark group includes lateral fiducial markings group It is arranged with the reference mark of longitudinal reference mark group, the lateral fiducial markings group along the first direction, the longitudinal direction benchmark The reference mark of mark group is arranged along the second direction；

The first offset marker group includes horizontal with the first lateral shift mark group and first longitudinal direction offset marker group, described first It is arranged to the first offset marker of offset marker group along the first direction, the first offset of the first longitudinal direction offset marker group Label is arranged along the upper second direction；

First contraposition is handled

According to the described first lateral figure offset, first offset marker is selected in the first lateral shift mark group To the located lateral label pair as the second mask plate, and make two the first offset markers of the located lateral label pair in institute It states the orthographic projection on the first mask plate and is symmetrically located in corresponding reference mark two sides in lateral fiducial markings group；

According to the first longitudinal direction map migration amount, first offset marker is selected in the first longitudinal direction offset marker group To the longitudinal register label pair as the second mask plate, and make two the first offset markers of the longitudinal register label pair in institute It states the orthographic projection on the first mask plate and is symmetrically located in corresponding reference mark two sides in longitudinal reference mark group.

16. exposure method as claimed in claim 14, which is characterized in that the mask assembly further include: third mask plate, with First mask plate and the overlapping setting of second mask plate, the third mask plate include graph area and the encirclement figure The external zones in shape area has third figure on the third mask plate of the graph area, for first figure and described the Two figures match to form the targeted graphical；

There is the second offset marker group, the second offset marker group includes multiple second on the third mask plate of the external zones Offset marker pair, the multiple second offset marker pair is corresponding with the multiple reference mark 21, adjacent second offset Label interval between is less than between the adjacent reference mark between spacing or adjacent second offset marker pair Interval is greater than spacing between the adjacent reference mark, and second offset marker is to including two spaced second Offset marker, two the second offset markers of at least one the second offset marker pair are described in the second offset marker group Orthographic projection on two mask plates is symmetrically located in corresponding reference mark two sides；

The exposure method further include:

After the mask assembly is provided, according to the targeted graphical, the first zero figure and the third figure, obtain Second graph offset；

After carrying out the first contraposition processing to second mask plate, before being exposed, the third mask plate is loaded；To institute It states third mask plate and carries out the second contraposition processing, the second contraposition processing includes: according to the second graph offset, selection One the second offset marker makes two second of the telltale mark pair to deviate the telltale mark pair as third mask plate The orthographic projection on first mask plate is marked to be symmetrically located in corresponding reference mark two sides, to realize the third exposure mask The positioning of plate；

The step of being exposed using the mask assembly includes: to utilize first mask plate, second mask plate and institute Third mask plate is stated to be exposed the layer to be exposed.

17. exposure method as claimed in claim 16, which is characterized in that one of multiple second offset marker centerings is second Zero migration label pair, two the second offset markers of second zero migration label pair on first mask plate just When projection is symmetrically located in corresponding reference mark two sides, the position of third figure orthographic projection on first mask plate For the second dead-center position；

The second graph offset includes the second lateral figure offset and second longitudinal direction map migration amount；

The step of obtaining the second graph offset include:

According to the difference of the targeted graphical and the first zero figure, the deviation post of the third figure is obtained；

According to the difference of the deviation post and second dead-center position in a first direction, the described second lateral figure is obtained Offset；

According to the difference of the deviation post and second dead-center position in a second direction, the second longitudinal direction figure is obtained Offset；

According to the targeted graphical and the difference of the first zero figure in a first direction, the described first lateral figure is obtained Offset.

18. exposure method as claimed in claim 13, which is characterized in that the quantity of the reference mark group is 4, described the The quantity of one offset marker group is 4；

It is corresponding in 4 the first offset marker groups in the step of carrying out the first contraposition processing to second mask plate The first offset marker to being the telltale mark pair, the first contraposition processing makes two of 4 telltale marks pair Orthographic projection of first offset marker on first mask plate is symmetrically located in corresponding reference mark two sides, to realize State the positioning of the second mask plate.

19. exposure method as claimed in claim 13, which is characterized in that during being exposed to the layer to be exposed, Exposure power is greater than 40mJ/cm²。