CN109831200A - Resistance circuit structure - Google Patents
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- CN109831200A CN109831200A CN201910014756.4A CN201910014756A CN109831200A CN 109831200 A CN109831200 A CN 109831200A CN 201910014756 A CN201910014756 A CN 201910014756A CN 109831200 A CN109831200 A CN 109831200A
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Abstract
It include: four resistance, first resistor and the series connection of the 4th resistance the invention discloses a kind of resistance circuit structure, second resistance and 3rd resistor are in parallel, then series circuit and parallel circuit in series.The ratio that first resistor is identical with the type of 3rd resistor and the resistance value of the two changes with process drift is consistent and negative temperature coefficient all having the same.The ratio that second resistance is identical with the type of the 4th resistance and the resistance value of the two changes with process drift is consistent and positive temperature coefficient all having the same；Second resistance and the resistance value of the 4th resistance are with the variation relation and first resistor of process drift and the resistance value of 3rd resistor with independent mutually between the variation relation of process drift.The present invention can be reduced influence of the process deviation to temperature-coefficient of electrical resistance.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit, more particularly to a kind of resistance circuit structure.
Background technique
Integrated production resistance is generally required in semiconductor integrated circuit, and corresponding various resistance are often in integrated circuits
All there is temperature coefficient, the resistance for being generally integrated circuit includes two kinds of temperatures coefficient, i.e. negative temperature coefficient and positive temperature coefficient.
The resistance value of the resistance of negative temperature coefficient often reduces as the temperature increases, and the resistance of negative temperature coefficient usually wraps
It includes: the P- polysilicon resistance (Unsalicided P-Poly Resistor, RPPOLYU) without metal silicide, the nothing of three terminals
Metal silicide P- polysilicon resistance (Three terminal Unsalicided P-Poly Resistor,
RPPOLYU3), RPPOLYU and RPPOLYU3 is common technical term in IC manufacturing field.
The resistance value of the resistance of positive temperature coefficient often increases as the temperature increases, and the resistance of positive temperature coefficient usually wraps
It includes: the P- polysilicon resistance (Salicided P-Poly Resistor, RPPOLYS) with metal silicide, no metal silication
The diffusion region the P+ resistance (unsalicided P+diffusion Resistor, RPDIFFU) of object, third metal layer resistance
(RM3), second metal layer resistance (RM2).RPPOLYS, RPDIFFU, RM2 and RM3 are common in IC manufacturing field
Technical term.
It is 0 temperature coefficient due to generally requiring resistance in integrated circuit, in order to realize 0 temperature coefficient, leads in existing method
The parallel connection for being formed frequently with the resistance string being made of the resistance of Positive and Negative Coefficient Temperature or being made of the resistance of Positive and Negative Coefficient Temperature
Resistance is formed.
In addition, the resistance value of resistance can also shift other than it can vary with temperature with process shifts, and different type
Resistance, resistance is no correlation with the change rate of process shifts, i.e., various resistance are under conditions of various process shifts
Change rate is independent of each other.Process shifts, that is, process corner (Process Corner) of resistance specifically includes that the angle TT
(Corner), SS Corner and FF Corner.Existing resistance will appear: adjusting at TT corner is 0 temperature coefficient
Resistance combination circuit, at SS or FF corner, since each resistance changes, the total moisture content of resistance combination circuit
Coefficient will change.
How temperature-coefficient of electrical resistance is eliminated with the process drift i.e. influence of process shifts, in some circuit designs, in full
Mode converter (DAC), bandgap reference circuit (Band Gap Reference, BGR) have to consider.
As shown in Figure 1, being the first existing resistance circuit structure chart, the resistance of 0 temperature coefficient, needs basis in order to obtain
The temperature coefficient of different type resistance is configured, and resistance R101 selection has the resistance of negative temperature coefficient, resistance R102 in Fig. 1
The resistance with positive temperature coefficient is selected, the first existing resistance circuit is connected in series by resistance R101 and resistance R102.
It enables:
TCU is the single order temperature coefficient of resistance R101；
TCS is the single order temperature coefficient of resistance R102；
TC1 is the temperature coefficient of entire the first existing resistance circuit；
α is the resistance value of resistance R101 and resistance R102 ratio, that is, R101/R102 in the first described existing resistance circuit.
It is available, TC1=TCU × α /+TCS × 1/ (1+ α) (1+ α).
Select different α, so that it may obtain being similar to 0 temperature coefficient.
However resistance can change with process drift, and different types of resistance, variation tendency is incoherent.
So the variation of resistance will lead to temperature-coefficient of electrical resistance and be distorted at FF Corner and SS Corner.In TT corner
The resistance of lower temperature coefficient very little, the temperature coefficient at FF Corner and SS Corner can become larger.
As shown in Fig. 2, being the resistance value of the first existing resistance circuit of Fig. 1 in TT Corner, SS Corner and FF
The curve varied with temperature under Corner, curve 101 be the first existing resistance circuit resistance value at TT Corner with temperature
The curve of variation, curve 102 is the curve that the resistance value of the first existing resistance circuit is varied with temperature at SS Corner, bent
Line 103 is the curve that the resistance value of the first existing resistance circuit is varied with temperature at FF Corner.As can be seen that in curve
102 and 103 meeting deflection curves 101, the change in resistance of curve 102 and 103 will increase.
Table one
| Temperature change | The change in resistance of curve 101 | The change in resistance of curve 102 | The change in resistance of curve 103 |
| (-40-25)/25 | 0.308% | - 0.275% | 0.899% |
| (125-25)/25 | 0.392% | 1.044% | - 0.174% |
The change in resistance of each curve in Fig. 2 please refers to table one, in temperature is that 25 DEG C of change in resistance for being are with curve 101
0%, it will thus be seen that
Between -40 DEG C and 25 degrees Celsius: the change in resistance of curve 101 is 0.308%, the change in resistance of curve 102 is -
0.275%, the change in resistance of curve 103 is 0.899%.As can be seen that being lower than 25 DEG C of low-temperature end, curve 102 is corresponding
Temperature coefficient will become negative, and the corresponding positive temperature coefficient of curve 103 will increase.
Between 125 DEG C and 25 degrees Celsius: the change in resistance of curve 101 is 0.392%, and the change in resistance of curve 102 is
1.044%, the change in resistance of curve 103 is -0.174%.As can be seen that being higher than 25 DEG C of temperature end, curve 102 is corresponding
Positive temperature coefficient can be big, and the corresponding temperature coefficient of curve 103 can become negative.
So the temperature coefficient of existing the first resistance circuit very little at TT corner shown in FIG. 1, in FF, SS
Changed under corner.Moreover, when it is that α increases that R101, which increases relative to R102, then series resistance, that is, existing first
The temperature coefficient of the resistance of kind resistance circuit is just more biased towards the temperature coefficient of R101.
As shown in figure 3, being existing second of resistance circuit structure chart, the resistance of 0 temperature coefficient, needs basis in order to obtain
The temperature coefficient of different type resistance is configured, and resistance R201 selection has the resistance of negative temperature coefficient, resistance R202 in Fig. 3
The resistance with positive temperature coefficient is selected, the first existing resistance circuit is connected in series by resistance R201 and resistance R202.
It enables:
TCU is the single order temperature coefficient of resistance R201；
TCS is the single order temperature coefficient of resistance R202；
TC2 is the temperature coefficient of entire existing second of resistance circuit；
β is the resistance value of resistance R201 and resistance R202 ratio, that is, R201/R202 in existing second of resistance circuit.
It is available, TC2=TCU × 1/ (1+ β)+TCS × β/(1+ β).
Select different β, so that it may obtain being similar to 0 temperature coefficient.
However resistance can change with process drift, and different types of resistance, variation tendency is incoherent.
So the variation of resistance will lead to temperature-coefficient of electrical resistance and be distorted at FF Corner and SS Corner.In TT corner
The resistance of lower temperature coefficient very little, the temperature coefficient at FF Corner and SS Corner can become larger.
As shown in figure 4, being the resistance value of existing second of resistance circuit of Fig. 3 in TT Corner, SS Corner and FF
The curve varied with temperature under Corner, curve 201 be existing second of resistance circuit resistance value at TT Corner with temperature
The curve of variation, curve 202 is the curve that the resistance value of existing second of resistance circuit is varied with temperature at SS Corner, bent
Line 203 is the curve that the resistance value of existing second of resistance circuit is varied with temperature at FF Corner.As can be seen that in curve
202 and 203 meeting deflection curves 201, the change in resistance of curve 202 and 203 will increase.
Table two
| Temperature change | The change in resistance of curve 201 | The change in resistance of curve 202 | The change in resistance of curve 203 |
| (-40-25)/25 | - 0.085% | 0.387% | - 1.482% |
| (125-25)/25 | - 0.043% | - 0.575% | 2.610% |
The change in resistance of each curve in Fig. 4 please refers to table two, in temperature is that 25 DEG C of change in resistance for being are with curve 201
0%, it will thus be seen that
Between -40 DEG C and 25 degrees Celsius: the change in resistance of curve 201 is -0.085%, and the change in resistance of curve 202 is
0.387%, the change in resistance of curve 203 is -1.482%.As can be seen that being lower than 25 DEG C of low-temperature end, curve 203 is corresponding
Temperature coefficient will become negative, and the corresponding positive temperature coefficient of curve 202 will increase.
Between 125 DEG C and 25 degrees Celsius: the change in resistance of curve 201 is -0.043%, the change in resistance of curve 202
It is -0.575%, the change in resistance of curve 203 is 2.610%.As can be seen that being higher than 25 DEG C of temperature end, curve 203 is corresponding
Positive temperature coefficient can be big, and the corresponding temperature coefficient of curve 202 can become negative.
So the temperature coefficient of existing second of resistance circuit very little at TT corner shown in Fig. 2, in FF, SS
Changed under corner.Moreover, when it is that β increases that R201, which increases relative to R202, then parallel resistance, that is, existing second
The temperature coefficient of the resistance of kind resistance circuit is just more biased towards the temperature coefficient of R202.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of resistance circuit structures, can be reduced process deviation to resistance temperature
Spend the influence of coefficient.
In order to solve the above technical problems, resistance circuit structure provided by the invention includes: first resistor, second resistance,
Three resistance and the 4th resistance.
The second end of 4th resistance connects the first end of the first resistor.
The second end of the first end of the second resistance, the first end of the 3rd resistor and the first resistor is connected to
Together.
The second end of the second resistance is connected together with the second end of the 3rd resistor.
The first resistor is identical with the type of the 3rd resistor, the resistance of the first resistor and the 3rd resistor
The ratio that value changes with process drift is consistent, the first resistor and 3rd resistor negative temperature system all having the same
Number.
The second resistance is identical with the type of the 4th resistance, the resistance of the second resistance and the 4th resistance
The ratio that value changes with process drift is consistent, the second resistance and the 4th resistance positive temperature system all having the same
Number；The second resistance and the resistance value of the 4th resistance are with the variation relation of process drift and the first resistor and described
The resistance value of 3rd resistor is with independent mutually between the variation relation of process drift.
The total resistance value of resistance circuit structure by the first resistor and the 4th resistance series impedance and institute
It states second resistance and is added the series and parallel compensated resistance to be formed composition with the parallel resistance value of the 3rd resistor, utilize the series resistance
Process deviation in value is to the process deviation in the influence and the parallel resistance value of the temperature coefficient of the all-in resistance to described
Just positive and negative opposite characteristic reduces process deviation to the temperature coefficient of the all-in resistance for the influence of the temperature coefficient of all-in resistance
Influence.
A further improvement is that the first resistor and the 3rd resistor single order negative temperature coefficient all having the same.
A further improvement is that the resistance type that the first resistor and the 3rd resistor use includes RPPOLYU,
RPPOLYU3。
A further improvement is that the second resistance and the 4th resistance single order positive temperature coefficient all having the same.
A further improvement is that the resistance type that the second resistance and the 4th resistance use includes RPPOLYS,
RPDIFFU,RM3,RM2。
A further improvement is that temperature coefficient of the total resistance value at the angle TT is set as tending to 0.
A further improvement is that making the total resistance value exist by the structure that the series and parallel compensated resistance forms the total resistance value
The deviation value of the temperature coefficient at the angle SS and the temperature coefficient at the angle TT is reduced.
A further improvement is that making the total resistance value exist by the structure that the series and parallel compensated resistance forms the total resistance value
The deviation value of the temperature coefficient at the angle FF and the temperature coefficient at the angle TT is reduced.
A further improvement is that the position of the first resistor and the 4th resistance can exchange, the second resistance and
The position of the 3rd resistor can exchange.
Resistance circuit structure of the invention uses and four resistance and forms series parallel circuit structure, and to four resistance
Type has carried out special setting, the type phase of the first resistor and 3rd resistor that are located in series circuit and parallel circuit
With and the two the ratio that changes with process drift of resistance value is consistent and negative temperature coefficient all having the same, be located at
Series circuit is identical with the type of the 4th resistance with the second resistance in parallel circuit and the resistance value of the two with process drift and
The ratio of variation is consistent and positive temperature coefficient all having the same, the resistance being made of series parallel circuit structure formed in this way
The temperature coefficient of the all-in resistance of circuit structure can be respectively by the work in the process deviation and parallel resistance value in series impedance
The influence of the Different Effects and the two of skill deviation is just positive and negative opposite to can be reduced process deviation to the temperature coefficient of all-in resistance
Influence.
Detailed description of the invention
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments:
Fig. 1 is the first existing resistance circuit structure chart；
Fig. 2 is the resistance value of the first existing resistance circuit of Fig. 1 at TT Corner, SS Corner and FF Corner
The curve varied with temperature；
Fig. 3 is existing second of resistance circuit structure chart；
Fig. 4 is the resistance value of existing second of resistance circuit of Fig. 3 at TT Corner, SS Corner and FF Corner
The curve varied with temperature；
Fig. 5 is resistance circuit structure chart of the embodiment of the present invention；
Fig. 6 A is the curve that the resistance value of resistance circuit of the embodiment of the present invention is varied with temperature at TT Corner；
Fig. 6 B is the curve that the resistance value of resistance circuit of the embodiment of the present invention is varied with temperature at SS Corner；
Fig. 6 C is the curve that the resistance value of resistance circuit of the embodiment of the present invention is varied with temperature at FF Corner.
Specific embodiment
As shown in figure 5, being resistance circuit structure chart of the embodiment of the present invention, resistance circuit structure of the embodiment of the present invention includes:
First resistor R1, second resistance R2,3rd resistor R3 and the 4th resistance R4.
The second end of the 4th resistance R4 connects the first end of the first resistor R1.
The second end of the first end of the second resistance R2, the first end of the 3rd resistor R3 and the first resistor R1
It links together.
The second end of the second resistance R2 is connected together with the second end of the 3rd resistor R3.
The first resistor R1 is identical with the type of the 3rd resistor R3, the first resistor R1 and the 3rd resistor
The ratio that the resistance value of R3 changes with process drift is consistent, and the first resistor R1 and the 3rd resistor R3 have identical
Negative temperature coefficient.
The second resistance R2 is identical with the type of the 4th resistance R4, the second resistance R2 and the 4th resistance
The ratio that the resistance value of R4 changes with process drift is consistent, and the second resistance R2 and the 4th resistance R4 have identical
Positive temperature coefficient；The resistance value of the second resistance R2 and the 4th resistance R4 are with the variation relation of process drift and described
The resistance value of first resistor R1 and the 3rd resistor R3 are with independent mutually between the variation relation of process drift.
The total resistance value of resistance circuit structure by the series impedance of the first resistor R1 and the 4th resistance R4 with
And the second resistance R2 is added the series and parallel compensated resistance to be formed composition with the parallel resistance value of the 3rd resistor R3, using described
Process deviation in series impedance is inclined to the technique in the influence and the parallel resistance value of the temperature coefficient of the all-in resistance
Just positive and negative opposite characteristic reduces process deviation to the all-in resistance for influence of the difference to the temperature coefficient of the all-in resistance
The influence of temperature coefficient.
In the embodiment of the present invention, the first resistor R1 and the 3rd resistor R3 all single order negative temperature having the same systems
Number.The resistance type that the first resistor R1 and 3rd resistor R3 is used includes RPPOLYU, RPPOLYU3.
The second resistance R2 and the 4th resistance R4 single order positive temperature coefficient all having the same.The second resistance
The resistance type that R2 and the 4th resistance R4 is used includes RPPOLYS, RPDIFFU, RM3, RM2.
Temperature coefficient of the total resistance value at the angle TT is set as tending to 0.
Make the total resistance value in the temperature coefficient at the angle SS by the structure that the series and parallel compensated resistance forms the total resistance value
It is reduced with the deviation value of the temperature coefficient at the angle TT.
Make the total resistance value in the temperature coefficient at the angle FF by the structure that the series and parallel compensated resistance forms the total resistance value
It is reduced with the deviation value of the temperature coefficient at the angle TT.
The position of the first resistor R1 and the 4th resistance R4 can exchange, the second resistance R2 and third electricity
The position of resistance R3 can exchange.
The resistance circuit structure of the embodiment of the present invention uses four resistance and forms series parallel circuit structure, and to four
The type of resistance has carried out special setting, first resistor R1 and the 3rd resistor being located in series circuit and parallel circuit
The ratio that the type of R3 is identical and the resistance value of the two changes with process drift is consistent and negative temperature system all having the same
Number, is located at that series circuit is identical with the type of second resistance R2 and the 4th resistance R4 in parallel circuit and the resistance of the two
The ratio that value changes with process drift is consistent and positive temperature coefficient all having the same, formed in this way by series-parallel circuit
The temperature coefficient of the all-in resistance of the resistance circuit structure of structure composition can respectively by the process deviation in series impedance and simultaneously
The influence of the Different Effects and the two of process deviation in connection resistance value is just positive and negative opposite to can be reduced process deviation to total
The influence of the temperature coefficient of resistance.
Illustrate the embodiment of the present invention using series and parallel compensated resistance now in conjunction with formula to weaken process deviation to temperature-coefficient of electrical resistance
Influence working principle:
R1 and R3: same resistance type RPPOLYU, the ratio that resistance value changes with process drift are consistent, tool
There is negative temperature coefficient TCnegative.
R2 and R4: same resistance type RPPOLYS, the ratio that resistance value changes with process drift are consistent, tool
There is positive temperature coefficient TCpositive.
Description of the invention, R1 indicate the first resistor R1 in Fig. 5 and R1 couples of the first resistor in calculation formula simultaneously
The resistance value answered, R2 indicate the second resistance R2 resistance value corresponding with the second resistance R2 in calculation formula in Fig. 5 simultaneously, and R3 is same
When indicate 3rd resistor R3 resistance value corresponding with the 3rd resistor R3 in calculation formula in Fig. 5, R4 is indicated in Fig. 5 simultaneously
4th resistance R4 resistance value corresponding with the 4th resistance R4 in calculation formula.
In the first condition:
Assuming that the R1 with negative temperature coefficient, R3 increase with process drift, R2, R4 with positive temperature coefficient are constant.
When R1, R3 increase, according to formula 3, formula 6, then R10, R30 increase, and β is constant.
R2, R4 are constant, and according to formula 4, formula 5, formula 7, then R20, R40 are constant, and alpha, gamma reduces.
According to formula 10, first item adds up to the temperature coefficient of series resistance R4 and R1 with Section 2, and γ reduction then leads to γ
C2 reduces, and the temperature coefficient of series resistance is deviated towards the direction C1；Meanwhile Section 3 is the temperature coefficient of parallel resistance R2 and R3, α
Reduce, the temperature coefficient of parallel resistance can be deviated towards the direction C2.C1 and C2, i.e. positive temperature coefficient and negative temperature coefficient, it is just mutually complementary
It repays, achievees the purpose that complementation.
In second of condition:
Assuming that R2, R4 with positive temperature coefficient increase with process drift, the R1 with negative temperature coefficient, R3 are constant.
R2, R4 increase, and according to formula 4, formula 5, then R20, R40 increase, and alpha, gamma is also increase accordingly.
R1, R3 are constant, and according to formula 3, formula 5, then R10, R30 is constant, and β is constant.
According to formula 10, first item adds up to the temperature coefficient of series resistance R4 and R1 with Section 2, and γ increase then leads to γ
C2 increases, and the temperature coefficient of series resistance is deviated towards the direction C2；Meanwhile Section 3 is the temperature coefficient of parallel resistance R2 and R3, α
Increase, the temperature coefficient that will lead to parallel resistance can be deviated towards the direction C1.C1 and C2, i.e. positive temperature coefficient and negative temperature coefficient, just
It mutually compensates, achievees the purpose that complementation.
C1 and C2 is reverse phase, to achieve the purpose that mutually compensate.
C1=1+TCnegative* △ T ... (formula 1)；
TCnegative is RPPOLYU in formula 1 single order temperature coefficient and be constant.
C2=1+TCpositive* △ T ... (formula 2)；
TCpositive is RPPOLYU in formula 2 single order temperature coefficient and be constant.
R1=R10*C1, R3=R30*C1 ... (formula 3)；
Formula 3 is to indicate R1 and R3 expression formula relevant to temperature coefficient, wherein R10, and R30 is temperature independent, but can be with work
Skill corner drifts about and changes, and * is indicated multiplied by symbol.
R2=R20*C2, R4=R40*C2 ... (formula 4)；
Formula 4 is to indicate R2 and R expression formula relevant to temperature coefficient, wherein R20, and R40 is temperature independent, but can be with technique
Corner drifts about and changes.
R20=α * R10 ... (formula 5)；
Formula 5 defines the relationship of R20 and R10.
R30=β * R10 ... (formula 6)；
Formula 6 defines the relationship of R30 and R10.
R40=γ * R10 ... (formula 7)；
Formula 7 defines the relationship of R40 and R10.
Formula 8 be simultaneously, the resistance value formula of series resistance string.
Formula 9 is that 1~formula of wushu 7 substitutes into the result after formula 8.
Formula 10 is the temperature coefficient of the series-parallel combined resistance obtained by formula 9.
By the TT of the circuit to the embodiment of the present invention, the temperature coefficient of FF, SS, which carry out emulation, can obtain Fig. 6 A to Fig. 6 C
Shown in result:
It as shown in Figure 6A, is the curve that is varied with temperature at TT Corner of resistance value of resistance circuit of the embodiment of the present invention
It is gone back in 1, Fig. 6 A while giving the corresponding curve 101 of series circuit shown in FIG. 1.
It as shown in Figure 6B, is the curve that is varied with temperature at SS Corner of resistance value of resistance circuit of the embodiment of the present invention
It is gone back in 2, Fig. 6 B while giving the corresponding curve 102 of series circuit shown in FIG. 1.
It as shown in Figure 6 C, is the curve that is varied with temperature at FF Corner of resistance value of resistance circuit of the embodiment of the present invention
It is gone back in 3, Fig. 6 C while giving the corresponding curve 103 of series circuit shown in FIG. 1.
As can be seen that series-parallel combined resistance that the embodiment of the present invention obtains and existing series resistance phase shown in FIG. 1
Than: the temperature coefficient under SS corner improves the temperature coefficient under 50% or more, FF corner and improves 15% or more.
The present invention has been described in detail through specific embodiments, but these are not constituted to limit of the invention
System.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, these are also answered
It is considered as protection scope of the present invention.
Claims (9)
1. a kind of resistance circuit structure characterized by comprising first resistor, second resistance, 3rd resistor and the 4th resistance；
The second end of 4th resistance connects the first end of the first resistor；
The second end of the first end of the second resistance, the first end of the 3rd resistor and the first resistor is connected to one
It rises；
The second end of the second resistance is connected together with the second end of the 3rd resistor；
The first resistor is identical with the type of the 3rd resistor, the resistance value of the first resistor and the 3rd resistor with
Process drift and the ratio that changes is consistent, the first resistor and 3rd resistor negative temperature coefficient all having the same；
The second resistance is identical with the type of the 4th resistance, the resistance value of the second resistance and the 4th resistance with
Process drift and the ratio that changes is consistent, the second resistance and the 4th resistance positive temperature coefficient all having the same；Institute
The resistance value of second resistance and the 4th resistance is stated with the variation relation of process drift and the first resistor and the third
The resistance value of resistance is with independent mutually between the variation relation of process drift；
The total resistance value of resistance circuit structure by the first resistor and the 4th resistance series impedance and described
Two resistance are added the series and parallel compensated resistance to be formed composition with the parallel resistance value of the 3rd resistor, using in the series impedance
Process deviation to the process deviation in the influence of the temperature coefficient of the all-in resistance and the parallel resistance value to total electricity
Just positive and negative opposite characteristic reduces process deviation to the shadow of the temperature coefficient of the all-in resistance for the influence of the temperature coefficient of resistance
It rings.
2. resistance circuit structure as described in claim 1, it is characterised in that: the first resistor and the 3rd resistor all have
There is identical single order negative temperature coefficient.
3. resistance circuit structure as claimed in claim 1 or 2, it is characterised in that: the first resistor and the 3rd resistor
The resistance type of use includes RPPOLYU, RPPOLYU3.
4. resistance circuit structure as described in claim 1, it is characterised in that: the second resistance and the 4th resistance all have
There is identical single order positive temperature coefficient.
5. resistance circuit structure as described in claim 1 or 4, it is characterised in that: the second resistance and the 4th resistance
The resistance type of use includes RPPOLYS, RPDIFFU, RM3, RM2.
6. resistance circuit structure as described in claim 1, it is characterised in that: temperature coefficient of the total resistance value at the angle TT is set
It is set to and tends to 0.
7. resistance circuit structure as claimed in claim 6, it is characterised in that: form the all-in resistance by the series and parallel compensated resistance
The structure of value reduces the total resistance value in the deviation value of the temperature coefficient at the angle SS and the temperature coefficient at the angle TT.
8. resistance circuit structure as claimed in claim 6, it is characterised in that: form the all-in resistance by the series and parallel compensated resistance
The structure of value reduces the total resistance value in the deviation value of the temperature coefficient at the angle FF and the temperature coefficient at the angle TT.
9. resistance circuit structure as described in claim 1, it is characterised in that: the position of the first resistor and the 4th resistance
Setting can exchange, and the position of the second resistance and the 3rd resistor can exchange.
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| CN201910014756.4A CN109831200A (en) | 2019-01-08 | 2019-01-08 | Resistance circuit structure |
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|---|---|---|---|
| CN201910014756.4A CN109831200A (en) | 2019-01-08 | 2019-01-08 | Resistance circuit structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615718A (en) * | 2018-05-11 | 2018-10-02 | 上海华力集成电路制造有限公司 | Electric fuse circuit and fuse cell architecture |
| CN112667017A (en) * | 2020-12-29 | 2021-04-16 | 上海华力微电子有限公司 | Parallel bandgap reference circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101859158A (en) * | 2009-04-08 | 2010-10-13 | 台湾积体电路制造股份有限公司 | Reference current circuit and generating method thereof |
| CN104579172A (en) * | 2014-11-28 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | Resistor circuit with temperature coefficient compensation |
| WO2018037719A1 (en) * | 2016-08-22 | 2018-03-01 | 日立オートモティブシステムズ株式会社 | Sensor device |
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2019
- 2019-01-08 CN CN201910014756.4A patent/CN109831200A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859158A (en) * | 2009-04-08 | 2010-10-13 | 台湾积体电路制造股份有限公司 | Reference current circuit and generating method thereof |
| CN104579172A (en) * | 2014-11-28 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | Resistor circuit with temperature coefficient compensation |
| WO2018037719A1 (en) * | 2016-08-22 | 2018-03-01 | 日立オートモティブシステムズ株式会社 | Sensor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615718A (en) * | 2018-05-11 | 2018-10-02 | 上海华力集成电路制造有限公司 | Electric fuse circuit and fuse cell architecture |
| CN112667017A (en) * | 2020-12-29 | 2021-04-16 | 上海华力微电子有限公司 | Parallel bandgap reference circuit |
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Application publication date: 20190531 |