CN109828439A - A kind of nanometer resonance interference method photolithographic structures of unidirectional excitating surface plasma wave - Google Patents
A kind of nanometer resonance interference method photolithographic structures of unidirectional excitating surface plasma wave Download PDFInfo
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- CN109828439A CN109828439A CN201910216595.7A CN201910216595A CN109828439A CN 109828439 A CN109828439 A CN 109828439A CN 201910216595 A CN201910216595 A CN 201910216595A CN 109828439 A CN109828439 A CN 109828439A
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Abstract
The present invention relates to a kind of nanometer resonance interference method photolithographic structures of unidirectional excitating surface plasma wave, the specially super-resolution nanometer waveguide resonance interference method photolithographic structures based on unidirectional excitating surface plasma wave, including the trapezoidal thin layer of thin metal layer, photoresist layer, metal and substrate layer.Photoresist layer and the trapezoidal thin layer of metal constitute the coupled apparatus of unidirectional excitating surface plasma wave, and thin metal layer, photoresist layer and the trapezoidal thin layer of metal together constitute the metal waveguide structure of resonant cavity based on surface plasma.The photolithographic structures, the nano-photoetching figure of acquisition have the characteristics that high-intensitive, high-resolution and high uniformity, have developed existing surface plasma photoetching technology.The depth-to-width ratio and uniformity of the nano-photoetching striped of generation are improved much compared to existing based on surface plasma photoetching method, can adjust the resolution ratio and depth that the corresponding metal material under different light sources obtains high uniformity nano-photoetching figure by changing thickness and the angle of trapezoidal metal layer.
Description
Technical field
The present invention relates to micro-nano electronic device and semiconductor fields, and in particular to a kind of unidirectional excitating surface plasma wave
Nanometer resonance interference method photolithographic structures.
Background technique
Currently, the fast development of microelectronic component and semiconductor industry, to obtaining high resolution, high quality nano graph
Lithography requirement is higher and higher.Since traditional optical imagery and micrometer-nanometer processing technology are limited by diffraction limit, utilize
The super diffraction characteristic of surface plasma wave (Surface Plasmon Waves, SPWs) will be to obtain sub-wavelength, even more
The structure of small nano-scale provides potential technological approaches.A kind of distinguishing feature of SPWs is exactly its wavelength ratio under same frequency
Light wave it is much smaller, while there is the unusual optical characteristics of near field enhancement effect, can effectively overcome lacking for evanescent wave feeble field
Point obtains smaller figure.
The nano-photoetching figure of high quality, in addition to high resolution ratio, pattern uniformity is also inspection figure preparation quality
Important indicator.
Document T. Xu; L. Fang; B. Zeng; Y. Liu; C. Wang; Q. Feng; X. Luo, J.
Opt. A:Pure Appl. Opt. 11,085003 (2009) discloses a kind of knot of unidirectional excitating surface plasma
Structure, this structure are the media of two adjacent nano slit filling different refractivities, regulate and control the surface wave phase come out from slit,
Realize the unidirectional excitation of surface wave.Sub-wavelength interference photolithography may be implemented using symmetrical this unidirectional excitating surface wave structure,
And has the advantages that light intensity reinforcing effect and improve depth of focus.But different medium is filled in two neighboring slit, in practical operation
On have great difficulty.
Document X. Yang; J. Wang; X. H. Lim; Z. Xu; J. Teng; D. H. Zhang; J.
Phys. D:Appl. Phys. 50 (4), 045101 (2017) disclose another unidirectional excitating surface plasma wave
Method.This method designs a kind of trapezoidal nano-seam structure of metal, selects suitable gold according under a certain particular job wavelength
Category and its size realize the one direction excitation of surface plasma wave.The surface plasma unidirectionally excited is utilized using this
Wave interference photolithography method, although super-resolution nano-photoetching figure may be implemented, light intensity still figure depth of focus direction exponentially
Decaying, the uniformity of figure are not good enough.
Summary of the invention
In view of the above technical problems, it is high uniform to realize to provide a kind of photolithographic structures that structure is simple, inexpensive by the present invention
The super-resolution nano-photoetching figure of property.
A kind of nanometer resonance interference method photolithographic structures of unidirectional excitating surface plasma wave:
Including thin metal layer, photoresist layer, the trapezoidal thin layer of metal and substrate layer, the photoresist layer and the trapezoidal thin layer structure of metal
At the coupled apparatus of unidirectional excitating surface plasma wave, the thin metal layer, photoresist layer and the trapezoidal thin layer of metal are common
Constitute the metal waveguide structure of resonant cavity based on surface plasma；
Further, the material of thin metal layer is Cr, Au, Ag or Al, with a thickness of 20nm~100nm.
Further, photoresist layer is with a thickness of the nm of 20nm~500；The thickness of photoresist layer is by lambda1-wavelength and upper and lower two
The material and thickness of kind metal are determined.
The material of the trapezoidal thin layer of further metal is Cr, Au, Ag or Al, with a thickness of 20nm~1000nm.
Further, substrate layer is made of quartz or polyethylene terephthalate.
The utility model has the advantages that
High uniformity super resolution interference lithography structure provided by the invention based on unidirectional surface plasma, metal waveguide structure
It is made of thin metal layer, photoresist layer, the trapezoidal thin layer of metal etc., the trapezoidal thin layer of the metal of the inside provides unidirectional surface plasma
Wave excitation, the nano graph of generation breach existing surface plasma photoetching technology.The nano-photoetching striped of generation it is equal
Even property is general many based on the raising of surface plasma interference photoetching method compared to existing, which can pass through tune
Material, thickness h and the angle, θ of the trapezoidal thin layer of metal are saved to adjust nano graph resolution ratio and uniformity.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention；
Fig. 2 be embodiment 1 photolithographic structures in excite the trapezoidal metal nano-seam thickness h and angle, θ relationship of unidirectional surface wave
Figure；
Fig. 3 is the electric-field intensity distribution figure that unidirectional surface plasma wave is excited in embodiment 1；
Fig. 4 be in embodiment 1 without thin metal layer when, the structure of two symmetrical unidirectional excitating surface plasma waves, surface etc.
The electric-field intensity distribution figure of gas ions wave interference photoetching；
Fig. 5 is the electric-field intensity distribution figure of surface plasmon wave resonance interference lithography in embodiment 1；
Fig. 6 be embodiment 1 surface plasmon wave resonance interference lithography at photoresist different location (z=20 nm, z=
The nm of 40 nm and z=60) litho pattern electric-field intensity distribution figure；
In Fig. 1ε1、ε2、ε3 respectively represent the dielectric constant of metal, photoresist and substrate layer material.
Specific embodiment
The present invention will be further described below with reference to examples:
A kind of nanometer resonance interference method photolithographic structures of unidirectional excitating surface plasma wave successively include thin metal layer 1, photoresist
Layer 2, the trapezoidal thin layer 3 of metal and substrate layer 4, the trapezoidal thin layer 3 of the thin metal layer 1, photoresist layer 2, metal together constitute gold
Belong to waveguide resonator；
Thin metal layer 1 and the trapezoidal thin layer 3 of metal are all made of metallic aluminium (Al), and the material that substrate layer 4 uses is SiO2.Incident TM is inclined
It shakes light from bottom to top vertical incidence, wavelength 365nm, SiO2Refractive index with photoresist is 1.4745 and 1.7, Jie of Al respectively
Electric constant is εAl=﹣ 18.2212+3.2263i.Simulation calculating is carried out to above-mentioned photolithographic structures, Y-direction is recognized in calculating process
To be endless, method used by calculating is finite time-domain calculus of finite differences.
Fig. 2 is that the surface plasma in the present embodiment design structure unidirectionally excites coupler, and trapezoidal metal nano-seam is thick
Spend h and angle, θ relational graph.What color represented in figure is in the present embodiment design structure, away from trapezoidal metal nano-seam center or so
The ratio of electric field strength at the same distance position of two sides, from figure 2 it can be seen that under the light source of 365nm, trapezoidal thin metal layer
Under thickness h=338nm, slit width w=200nm and angle, θ=80.5o, surface plasma wave almost all can be prejudged from metal foil
It propagates on the right side of layer nano-seam.Fig. 3 is the field distribution of unidirectional excitating surface plasma wave in the present embodiment design structure, card
The real result of Fig. 2.Fig. 4 is the photoetching of two symmetrical unidirectional excitating surface plasma waves in the present embodiment design structure
Electric-field intensity distribution.It can be seen that the half period of the nano-photoetching figure of production is about 50nm, the intensity of photoetching striped is with entering
Optical propagation direction decaying is penetrated, it is not fine for leading to the uniformity of litho pattern.
In order to improve the uniformity of litho pattern, our two symmetrical unidirectional excitating surface plasmas in Fig. 4
One layer of thin metal layer is being added on the basis of the photolithographic structures of wave, is constituting the resonance interference method waveguide photolithographic structures of the present embodiment.Fig. 5 is
The unidirectional excitating surface plasma wave super-resolution resonance interference method photoetching field distribution of the present embodiment.1.64 μm of interference region spacing,
The photoresist thickness 80nm of waveguiding structure.It can be seen that unidirectionally the surface plasma interference of excitation coupler is total in conjunction with waveguide
Vibration, the uniformity of obtained nano-photoetching figure are very high.Shown in fig. 6 is difference photoresist region z=20nm, 40nm
With the field distribution of the interference fringe of the position 60nm, the litho pattern half-breadth of high quality is about 50nm, depth 80nm, contrast
Higher than 0.9.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (5)
1. a kind of nanometer resonance interference method photolithographic structures of unidirectional excitating surface plasma wave: it is characterized in that, the photoetching
Structure includes thin metal layer, photoresist layer, the trapezoidal thin layer of metal and substrate layer, the photoresist layer and the trapezoidal thin layer structure of metal
At the coupled apparatus of unidirectional excitating surface plasma wave, the thin metal layer, photoresist layer and the trapezoidal thin layer of metal are common
Constitute the metal waveguide structure of resonant cavity based on surface plasma.
2. a kind of nanometer resonance interference method photolithographic structures of unidirectional excitating surface plasma wave according to claim 1: its
It is characterized in that, the material of thin metal layer is Cr, Au, Ag or Al, with a thickness of the nm of 20nm~100.
3. a kind of nanometer resonance interference method photolithographic structures of unidirectional excitating surface plasma wave according to claim 1: its
It is characterized in that, photoresist layer is with a thickness of the nm of 20nm~500；The thickness of photoresist layer is by lambda1-wavelength and upper and lower two kinds of metals
Material and thickness determined.
4. a kind of nanometer resonance interference method photolithographic structures of unidirectional excitating surface plasma wave according to claim 1: its
It is characterized in that, the material of the trapezoidal thin layer of metal is Cr, Au, Ag or Al, with a thickness of the nm of 20nm~1000.
5. a kind of nanometer resonance interference method photolithographic structures of unidirectional excitating surface plasma wave according to claim 1: its
It is characterized in that, substrate layer is made of quartz or polyethylene terephthalate.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102636967A (en) * | 2012-04-19 | 2012-08-15 | 苏州大学 | Surface plasma nanometer photo-etching structure and method |
| CN104614949A (en) * | 2015-02-10 | 2015-05-13 | 河南理工大学 | High depth-to-width ratio super-resolution nano photoetching structure and method |
| CN104733997A (en) * | 2015-04-03 | 2015-06-24 | 北京大学 | Dual-color surface plasmon beam splitter of asymmetrical nanometer groove structure and beam splitting method |
| US20160306111A1 (en) * | 2015-04-20 | 2016-10-20 | Skorpios Technologies, Inc. | Back side via vertical output couplers |
-
2019
- 2019-03-21 CN CN201910216595.7A patent/CN109828439A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102636967A (en) * | 2012-04-19 | 2012-08-15 | 苏州大学 | Surface plasma nanometer photo-etching structure and method |
| CN104614949A (en) * | 2015-02-10 | 2015-05-13 | 河南理工大学 | High depth-to-width ratio super-resolution nano photoetching structure and method |
| CN104733997A (en) * | 2015-04-03 | 2015-06-24 | 北京大学 | Dual-color surface plasmon beam splitter of asymmetrical nanometer groove structure and beam splitting method |
| US20160306111A1 (en) * | 2015-04-20 | 2016-10-20 | Skorpios Technologies, Inc. | Back side via vertical output couplers |
Non-Patent Citations (1)
| Title |
|---|
| XUEFENG YANG 等: "Unidirectional generation of surface plasmon polaritons by a single right-angled trapezoid metallic nanoslit", 《JOURNAL OF PHYSICS D: APPLIED PHYSICS》 * |
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Application publication date: 20190531 |