CN103543600A - Super-lens structure and imaging method thereof - Google Patents
Super-lens structure and imaging method thereof Download PDFInfo
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- CN103543600A CN103543600A CN201310499889.8A CN201310499889A CN103543600A CN 103543600 A CN103543600 A CN 103543600A CN 201310499889 A CN201310499889 A CN 201310499889A CN 103543600 A CN103543600 A CN 103543600A
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Abstract
The invention discloses a super-lens structure and an imaging method thereof. The super-lens structure sequentially comprises a first transparent substrate layer, a mask layer, a PMMA (polymethyl methacrylate) interval layer, a resonance cavity structure and a second substrate layer from top to bottom and is characterized in that an imaging object is arranged on the mask layer; the resonance cavity structure with surface plasmon polaritons comprises a first metal layer, a photoresist layer and a second metal layer from top to bottom. The super-lens structure can improve the imaging resolution by adjusting the thickness of the photoresist layer and expand the imaging depth under a resonance effect to improve the imaging quality. The boundedness in the aspects of improvement of resolution, improvement of imaging depth and the like of a conventional super-lens imaging technology can be broken through, and a new way for bidimensional imaging photoetching in large areas and in any shape can be created.
Description
Technical field
The present invention relates to super lens technical field of imaging, particularly relate to super lens structure and formation method thereof that a kind of resonant cavity effect of utilizing surface plasma excimer improves super lens image quality.
Background technology
Photoetching process is the technology that current semiconductor components and devices processing industry is most widely used, but along with developing rapidly of large scale integrated circuit and microstructured photonics components and parts, the size of device is more and more less, integrated level is more and more higher, also more and more higher to the precision of photoetching and resolution requirement, the diffraction of light limit has become the bottleneck that photoetching resolution improves.Putting forward at present high-resolution a kind of direct method is to use more short wavelength's light source, as EUV light source, soft X-ray, electron beam etc., but existing, short wavelength's light source makes difficulty, serviceable life is short, expensive, the problems such as process is comparatively complicated, further put forward high-resolution ability and are restricted.
Document J.B.Pendry; Phys.Rev.Lett.2000, has proposed a kind of noble metal film material that utilizes in 85,3966. and has broken through the diffraction of light limit as super lens, realizes the method for " perfection " imaging.Super lens can be made by left-handed materials or material with negative refractive index, by excitating surface plasma excimer, strengthen the evanescent wave with high frequency composition, the loss of compensation evanescent wave, the evanescent wave after reconstruct can restore at the opposite side of super lens the full-resolution picture that a width is broken through diffraction limit.Document N.Fang, H.Lee, C.Sun, X.Zhang, Science, 2005, 308, a kind of experimental technique of realizing super lens super-resolution imaging is disclosed in 534., one deck is set in quartz substrate and comprises grid stroke to the chromium mask with " NANO " printed words, utilize the light illumination of 365nm, through wall, pass through the imaging in photoresist of silver layer super lens, under shining in same frequencies of light, the wave vector of the surface plasma excimer exciting is more much larger than ordinary light source, there is " visible light frequency, X-ray magnitude wavelength " characteristic, obtained the grating image of 60nm live width, it is the sixth that imaging resolution has reached illumination light wavelength, greatly broken through the diffraction of light limit.
Adopt said method can realize high-resolution imaging, can be applicable to the association areas such as photoetching, but adopt said method imaging, imaging resolution, by structure, material decision, cannot regulate, and imaging depth is very shallow.Therefore, while carrying out photoetching by the method, the picture depth-to-width ratio of institute's etching is little, and the raising of photoetching resolution is also restricted.
Therefore, how overcoming prior art in the limitation of the aspects such as resolution improvement, imaging depth raising, is that the method needs the key issue solving in semiconductor device fabrication.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of resonant cavity effect of utilizing surface plasma excimer to improve super lens structure and the formation method thereof of super lens image quality.
To achieve these goals, the technical scheme that the embodiment of the present invention provides is as follows:
A kind of super lens structure, described super lens structure comprises the first transparent basalis, mask layer, PMMA wall, structure of resonant cavity and the second basalis from top to down successively, on described mask layer, be provided with imaging object, described structure of resonant cavity is the structure of resonant cavity of surface plasma excimer, and structure of resonant cavity comprises the first metal layer, photoresist layer and the second metal level from top to down.
As a further improvement on the present invention, the material of described the first metal layer and the second metal level is silver.
As a further improvement on the present invention, the material of described mask layer is chromium.
As a further improvement on the present invention, the material of described the first basalis and the second basalis is SiO
2.
As a further improvement on the present invention, the thickness of described the first metal layer is 30nm, and the thickness of the second metal level is greater than 50nm, and the thickness of photoresist layer is 10nm～70nm.
As a further improvement on the present invention, the thickness of described photoresist layer is 15nm.
Correspondingly, a kind of formation method of super lens structure, described method comprises:
S1, formation super lens structure, described super lens structure comprises the first transparent basalis, mask layer, PMMA wall, structure of resonant cavity and the second basalis from top to down successively, on mask layer, be provided with imaging object, structure of resonant cavity comprises the first metal layer, photoresist layer and the second metal level from top to down;
S2, incident light be vertical incidence from top to down, the imaging object on mask layer is carried out in photoresist layer to imaging.
As a further improvement on the present invention, in described step S2, incident light is visible ray.
As a further improvement on the present invention, in described step S2, incident light is the circularly polarized light of wavelength 365nm.
As a further improvement on the present invention, the thickness of described the first metal layer is 30nm, and the thickness of the second metal level is greater than 50nm, and the thickness of photoresist layer is 10nm～70nm.
The present invention has following beneficial effect:
Super lens structure of the present invention and formation method thereof can regulate imaging resolution by changing the thickness of photoresist, and imaging depth can be expanded to whole photoresist layer, and this structure can to obtain homogeneity better, contrast is higher, the imaging pattern that depth-to-width ratio is better, this is for fixing super lens structure, and the super lens imaging technique based on surface plasmon resonance chamber effect of this novelty is that new road has been opened up in the two-dimensional imaging photoetching of large region and arbitrary shape.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, the accompanying drawing the following describes is only some embodiment that record in the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the schematic diagram of super lens structure in an embodiment of the present invention;
Fig. 2 is the structural representation of the imaging object that designs on mask layer in an embodiment of the present invention;
Fig. 3 (a)～3 (d) is the distribution map of the electric field of super lens structure 5nm, 10nm, 15nm, the imaging of 19nm place in photoresist layer in an embodiment of the present invention;
Fig. 4 is the distribution map of the electric field of traditional super lens (without the second metal level) 1nm, 2nm, 3nm, imaging of 4nm place in photoresist layer;
The structural representation that Fig. 5 (a) is another imaging object of designing on mask layer in an embodiment of the present invention, Fig. 5 (b)～5 (e) is for the super lens structure of present embodiment is the imaging Electric Field Distribution schematic diagram of 40nm, 30nm, 15nm, 10nm for photoresist layer thickness, and Fig. 5 (f) is that 15nm/20nm grid stroke is to the corresponding surface of intensity distribution;
Fig. 6 (a), 6 (b) are respectively in an embodiment of the present invention imaging transport function corresponding when different photoresist layer thickness and the graph of a relation of wave vector.
Embodiment
In order to make those skilled in the art person understand better the technical scheme in the present invention, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, should belong to the scope of protection of the invention.
Below in conjunction with drawings and Examples, the invention will be further described.
Shown in Figure 1 is the super lens structural representation based on surface plasmon resonance chamber effect in an embodiment of the present invention, super lens structure comprises the first transparent basalis 10, mask layer 20, PMMA wall 30, the first metal layer 40, photoresist layer 50, the second metal level 60 and the second basalis 70 from top to down successively, and the first metal layer 40, photoresist layer 50, the second metal level 60 form the structure of resonant cavity of surface plasma excimer.In the present embodiment, the material of the first metal layer 40 and the second metal level 60 is silver, and mask layer 20 is chromium mask layer, and the material of the first basalis 10 and the second basalis 70 is SiO
2.The thickness of the first metal layer 40 is 30nm, and the thickness of the second metal level 60 is greater than 50nm, and the thickness of photoresist layer 50 is 10nm～70nm, and preferably, the thickness of photoresist layer is 15nm.
The formation method of super lens structure in present embodiment, comprising:
S1, formation super lens structure, described super lens structure comprises the first transparent basalis, mask layer, PMMA wall, the first metal layer, photoresist layer, the second metal level and the second basalis from top to down successively, is provided with imaging object on mask layer;
S2, incident light be vertical incidence from top to down, the imaging object on mask layer is carried out in photoresist layer to imaging.Incident light is visible ray, and preferably, incident light is the circularly polarized light of wavelength 365nm.
In present embodiment, incident light is the circularly polarized light of wavelength 365nm, vertical incidence from top to bottom, SiO
2be respectively 1.5 and 1.6 with the refractive index of photoresist, the specific inductive capacity of chromium is ε
cr=-8.55+8.96i, the specific inductive capacity of silver is ε
ag=-2.4012+0.2488i, carries out simulated experiment to said structure, and in simulation process, y direction is considered to endless, and the software that simulation adopts is Canadian FDTD Solutions.
Fig. 2 is the imaging object structural representation designing on mask layer, shown in Fig. 3 and Fig. 4, be respectively the imaging distribution map of the electric field that the super lens of present embodiment design and traditional super lens (without the second metal level, there is no surface plasmon resonance chamber) obtain at photoresist layer different depth place.
In Fig. 2, the live width of imaging object is 45nm; Fig. 3 is for utilizing Fig. 1 structure, and in photoresist layer different depth place imaging, wherein photoresist layer is set to 20nm; Fig. 4 is the object picture that traditional super lens structure obtains, and in Fig. 1, there is no the second metal level, and other structure is identical.From Fig. 3 and Fig. 4, can find out, two kinds of methods imaging in photoresist is all different aspect resolution and imaging depth.Compare with Fig. 4, in Fig. 3 photoresist layer, imaging is more clear, and resolution is higher, and imaging depth has been expanded whole photoresist layer.
Fig. 5 (a) another imaging object structural representation for designing on mask layer, on the basis of Fig. 2, vertically and horizontal direction increase live width/be spaced apart the grid stroke pair of 30nm/50nm and 15nm/20nm, Fig. 5 (b)～5(e) be the super lens structure of present embodiment for the imaging Electric Field Distribution schematic diagram of different photoresist thickness, corresponding photoresist layer thickness is respectively 40nm, 30nm, 15nm, 10nm.
Along with reducing of photoresist thickness, imaging resolution improves gradually, reaches best when 15nm.Can find out that this simple structure has great benefit to the raising of imaging resolution and imaging depth.Utilize this structure, incident light is 365nm, when the thickness of photoresist is 15nm, the resolution of striped can be brought up to 15nm, be equivalent to 4 times of traditional super lens imaging resolution, and this resolution needs to utilize 193nm light just can reach by 30 pairs of metals-electrolytical multilayer super lens structure in imaging technique in the past.So the imaging resolution of this structure can directly regulate by changing the thickness of photoresist, and does not need to make separately complicated sandwich construction, and regulates the scope of imaging resolution much wider than sandwich construction by changing photoresist thickness.
In present embodiment, super lens structure can make an explanation by imaging transport function (TF) than the much bigger reason of traditional super lens structure imaging resolution.
As shown in Figure 1, this structure is comprised of seven parts, from top to bottom respectively: the first basalis 10(specific inductive capacity is ε
0), mask layer 20(specific inductive capacity is ε
1, thickness is d
1), PMMA wall 30(specific inductive capacity is ε
2, thickness is d
2), the first metal layer 40(specific inductive capacity is ε
3, thickness is d
3), photoresist layer 50(specific inductive capacity is ε
4, thickness is d
4), the second metal level 60(specific inductive capacity is ε
5, thickness is d
5) and the second basalis 70(specific inductive capacity be ε
0).Under the condition that is circularly polarized light at incident light, the transport function in photoresist layer can be regarded as the stack of traditional super lens and resonance glue effect, and the transport function of traditional super lens can be expressed from the next:
TF(k
x)=τ
2·τ
3·τ
4 (1)
Wherein, τ
j=exp (ik
jzz
j), j=2,4, τ
3for the transmission coefficient of upper silver layer, that is:
Wherein,
t
23=1+r
23，t
34=1+r
34
In addition, surface plasmon resonance chamber effect can be expressed as:
Wherein, r
3=[r
43+ r
32exp (2ik
3zd
3)] [1+r
43r
32exp (2ik
3zd
3)].
Described in present embodiment, the transport function of super lens in photoresist layer is:
Fig. 6 (a) is depicted as the graph of a relation that under different cavity length, (being the thickness of different photoresist layers) transport function changes with wave vector, and Fig. 6 (b) is corresponding X-Y scheme.
As can be seen from Figure 6, imaging resolution changes along with the variation of photoresist layer thickness, very obvious, at lambda1-wavelength, be 365nm, 40nm, 30nm, 20nm, 15nm are got respectively in chamber long (thickness of photoresist layer), the resulting transport function of 10nm is more and more level and smooth, and peak is to high-frequency mobile, and imaging resolution is improved, and picture element also improves; But when chamber long during for 10nm peak to low frequency direction, moved again, imaging resolution can decline to some extent, this is consistent with the software simulation of Fig. 5 (b)-(e).Fig. 5 (f) be 15nm/20nm grid stroke to the corresponding surface of intensity distribution, its contrast when photoresist layer thickness is 40nm, 30nm, 15nm and 10nm is respectively 0.05,0.1,0.4 and 0.2.From Fig. 6 (b), can find out, when chamber is grown up in 70nm, the transport function trend of present embodiment and traditional super lens structure is consistent, and surface plasmon resonance effect can weaken along with the long increase in chamber, therefore in concrete application, will strictly control the thickness of photoresist layer.
As can be seen from the above technical solutions, the present invention compared with prior art has following advantages:
1, resonant cavity of the present invention is comprised of upper silver layer, photoresist layer, lower silver layer, can be by regulating the thickness of photoresist layer to improve imaging resolution, simultaneously, imaging depth can be expanded to whole photoresist layer, has broken through traditional super lens imaging technique in the limitation of the aspect such as the tuning difficulty of resolution, imaging depth be shallow.
2, structure devices of the present invention is comprised of seven-layer structure, than tradition, the super lens imaging based on surface plasma excimer effect has improved much the imaging resolution producing, under the illumination of 365nm, in simulation process, can obtain the structure plan that minimum dimension is 15nm, and need to utilize 193nm incident light to irradiate tens layers metal-electrolytical multilayer super lens structure at the striped of this size in the past, can obtain, this structure devices can regulate imaging resolution by changing the thickness of photoresist, and imaging depth can be expanded to whole photoresist layer, and this structure can to obtain homogeneity better, contrast is higher, the imaging pattern that depth-to-width ratio is better, this is for fixing super lens structure, the super lens imaging technique based on surface plasmon resonance chamber effect of this novelty is that new road has been opened up in the two-dimensional imaging photoetching of large region and arbitrary shape.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and in the situation that not deviating from spirit of the present invention or essential characteristic, can realize the present invention with other concrete form.Therefore, no matter from which point, all should regard embodiment as exemplary, and be nonrestrictive, scope of the present invention is limited by claims rather than above-mentioned explanation, is therefore intended to include in the present invention dropping on the implication that is equal to important document of claim and all changes in scope.Any Reference numeral in claim should be considered as limiting related claim.
In addition, be to be understood that, although this instructions is described according to embodiment, but not each embodiment only comprises an independently technical scheme, this narrating mode of instructions is only for clarity sake, those skilled in the art should make instructions as a whole, and the technical scheme in each embodiment also can, through appropriately combined, form other embodiments that it will be appreciated by those skilled in the art that.
Claims (10)
1. a super lens structure, described super lens structure comprises the first transparent basalis, mask layer, PMMA wall, structure of resonant cavity and the second basalis from top to down successively, it is characterized in that, on described mask layer, be provided with imaging object, described structure of resonant cavity is the structure of resonant cavity of surface plasma excimer, and structure of resonant cavity comprises the first metal layer, photoresist layer and the second metal level from top to down.
2. super lens structure according to claim 1, is characterized in that, the material of described the first metal layer and the second metal level is silver.
3. super lens structure according to claim 1, is characterized in that, the material of described mask layer is chromium.
4. super lens structure according to claim 1, is characterized in that, the material of described the first basalis and the second basalis is SiO
2.
5. super lens structure according to claim 1, is characterized in that, the thickness of described the first metal layer is 30nm, and the thickness of the second metal level is greater than 50nm, and the thickness of photoresist layer is 10nm～70nm.
6. super lens structure according to claim 5, is characterized in that, the thickness of described photoresist layer is 15nm.
7. a formation method for super lens structure, is characterized in that, described method comprises:
S1, formation super lens structure, described super lens structure comprises the first transparent basalis, mask layer, PMMA wall, structure of resonant cavity and the second basalis from top to down successively, on mask layer, be provided with imaging object, structure of resonant cavity comprises the first metal layer, photoresist layer and the second metal level from top to down;
S2, incident light be vertical incidence from top to down, the imaging object on mask layer is carried out in photoresist layer to imaging.
8. method according to claim 7, is characterized in that, in described step S2, incident light is visible ray.
9. method according to claim 8, is characterized in that, in described step S2, incident light is the circularly polarized light of wavelength 365nm.
10. method according to claim 7, is characterized in that, the thickness of described the first metal layer is 30nm, and the thickness of the second metal level is greater than 50nm, and the thickness of photoresist layer is 10nm～70nm.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105158923A (en) * | 2015-09-30 | 2015-12-16 | 盐城师范学院 | Magnetic superlens structure with adjustable wavelength and imaging method thereof |
| CN106324727A (en) * | 2016-11-03 | 2017-01-11 | 山东师范大学 | Preparing system and preparing method of self-focusing planar microlens array |
| CN110308616A (en) * | 2019-01-29 | 2019-10-08 | 中国科学技术大学 | A kind of phasmon nano-photoetching method of long reach |
| CN111722392A (en) * | 2020-07-22 | 2020-09-29 | 南京大学 | Large-view-field integrated microscopic imaging device based on super-structured lens array |
| WO2024060362A1 (en) * | 2022-09-20 | 2024-03-28 | 中国科学院光电技术研究所 | Super-resolution photoetching structure, manufacturing method, and pattern transfer method |
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| CN102636967A (en) * | 2012-04-19 | 2012-08-15 | 苏州大学 | Surface plasma nanometer photo-etching structure and method |
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| CN102636967A (en) * | 2012-04-19 | 2012-08-15 | 苏州大学 | Surface plasma nanometer photo-etching structure and method |
Non-Patent Citations (1)
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| FUYANG XU 等: ""Superlens imaging with a surface plasmon polariton cavity in imaging space"", 《OPTICS LETTERS》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105158923A (en) * | 2015-09-30 | 2015-12-16 | 盐城师范学院 | Magnetic superlens structure with adjustable wavelength and imaging method thereof |
| CN106324727A (en) * | 2016-11-03 | 2017-01-11 | 山东师范大学 | Preparing system and preparing method of self-focusing planar microlens array |
| CN106324727B (en) * | 2016-11-03 | 2017-12-12 | 山东师范大学 | The manufacturing system and preparation method of self-focusing microlens array |
| CN110308616A (en) * | 2019-01-29 | 2019-10-08 | 中国科学技术大学 | A kind of phasmon nano-photoetching method of long reach |
| CN111722392A (en) * | 2020-07-22 | 2020-09-29 | 南京大学 | Large-view-field integrated microscopic imaging device based on super-structured lens array |
| CN111722392B (en) * | 2020-07-22 | 2021-06-08 | 南京大学 | Large-view-field integrated microscopic imaging device based on super-structured lens array |
| WO2024060362A1 (en) * | 2022-09-20 | 2024-03-28 | 中国科学院光电技术研究所 | Super-resolution photoetching structure, manufacturing method, and pattern transfer method |
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Application publication date: 20140129 |