CN109827961A - Silicon wafer is to identifier - Google Patents
Silicon wafer is to identifier Download PDFInfo
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- CN109827961A CN109827961A CN201910129809.7A CN201910129809A CN109827961A CN 109827961 A CN109827961 A CN 109827961A CN 201910129809 A CN201910129809 A CN 201910129809A CN 109827961 A CN109827961 A CN 109827961A
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- laser
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- detection unit
- light
- light intensity
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
The invention discloses a kind of silicon wafers to identifier, this identifier includes the laser emitter set gradually along beam direction, lens, detection unit, beam splitting unit and light intensity detector and polarization detector, the laser of laser transmitter projects exposes to detection unit after passing through lens focus, detection unit forms reflection light output to beam splitting unit, beam splitting unit exports two-way light beam and is received respectively by light intensity detector and polarization detector, light intensity detector measures the displacement of the light intensity of unit back reflection laser and hot spot on inspection, polarization detector measures the displacement of the polarization and hot spot of unit back reflection laser on inspection.This identifier effectively improves precision of the silicon wafer to identification, to improve the alignment precision of mask plate Yu the big crystal orientation of wafer, and light path element structure is simple, reduces equipment cost, has reaction speed fast, precision height, high reliability.
Description
Technical field
The present invention relates to optical technical field more particularly to a kind of silicon wafers to identifier.
Background technique
Currently, tradition differentiate silicon wafer to method be mostly X-ray diffraction crystal orientation calibration technique and laser reflection type calibration side
Method, but required equipment price is expensive, and precision is not high.In the processing of microdevice, each to different of single crystal silicon material is utilized
Property etching characteristic, forms various structures of different shapes with wet chemical technology.Domain in this processing technology, on mask plate
Have a great impact with the alignment precision of the big crystal orientation of wafer to the accuracy of manufacture of unprocessed microdevice.Therefore, make mask plate
Direction can be accurately located in specified crystal orientation be the processing technology key technology.But the miniature device in actual production
In part, the positioning accuracy of wafer crystal orientation notch only has, and is not able to satisfy the processing request of microdevice, and in microdevice
In process, since the presence of this alignment error makes the of low quality of converted products.Especially for those elongate rod knots
For the microdevice of structure, error is bigger.In order to reduce this error, the processing density of microdevice is improved it is necessary in domain
The alignment precision of mask plate and the big crystal orientation of wafer is improved in transfer process, to improve the quality of converted products.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of silicon wafers to identifier, this identifier effectively improve silicon wafer to
The precision of identification, to improve the alignment precision of mask plate Yu the big crystal orientation of wafer, and light path element structure is simple, reduce equipment at
This, has reaction speed fast, precision height, high reliability.
In order to solve the above technical problems, silicon wafer of the present invention to identifier include the Laser emission set gradually along beam direction
Device, lens, detection unit, beam splitting unit and light intensity detector and polarization detector, the laser of the laser transmitter projects
By exposing to the detection unit after the lens focus, detection unit forms reflection light output to the beam splitting unit, divides
Shu Danyuan exports two-way light beam and is received respectively by the light intensity detector and polarization detector, and the light intensity detector is measured
The displacement of the light intensity of unit back reflection laser and hot spot on inspection, the polarization detector measure unit back reflection laser on inspection
Polarization and hot spot displacement.
Further, the detection unit includes the silicon plate of surface coating silica film and is respectively arranged on silicon plate table
The silica membrane side in face and the positive and negative electrode of the silicon back other side, the positive and negative electrode include the copper sheet and stone of stacking
Ink sheet and graphite flake are separately connected the silicon back and silica membrane, and the positive and negative electrode is separately connected DC power supply
Positive and negative terminal.
Further, the graphite flake with a thickness of 10nm~5mm, the silica membrane is prepared by magnetron sputtering method,
It is with a thickness of 1~100nm.
Further, the laser incident angle of the detection unit is 0~90 °, the angle of incident light and reflected light is 0~
180°。
Further, the laser emitter be small-power semiconductor laser transmitter, Output of laser wavelength be 200~
1800nm。
Since silicon wafer of the present invention uses above-mentioned technical proposal to identifier, i.e. this identifier includes setting gradually along beam direction
Laser emitter, lens, detection unit, beam splitting unit and light intensity detector and polarization detector, laser transmitter projects
Laser form reflection light output to beam splitting unit, beam splitting unit by exposing to detection unit, detection unit after lens focus
It exports two-way light beam and is received respectively by light intensity detector and polarization detector, light intensity detector is measured anti-after unit on inspection
The light intensity of laser and the displacement of hot spot are penetrated, polarization detector measures the position of the polarization of unit back reflection laser and hot spot on inspection
It moves.This identifier effectively improves precision of the silicon wafer to identification, to improve the alignment precision of mask plate Yu the big crystal orientation of wafer, and light
Circuit component structure is simple, reduces equipment cost, has reaction speed fast, precision height, high reliability.
Detailed description of the invention
The present invention will be further described in detail below with reference to the accompanying drawings and embodiments:
Fig. 1 is silicon wafer of the present invention to identifier structural schematic diagram.
Specific embodiment
Embodiment as shown in Figure 1, silicon wafer of the present invention to identifier include the laser emitter set gradually along beam direction
1, lens 2, detection unit 3, beam splitting unit 4 and light intensity detector 5 and polarization detector 6, what the laser emitter 1 emitted
Laser exposes to the detection unit 3 after focusing by the lens 2, detection unit 3 forms reflection light output to the beam splitting
Unit 4, beam splitting unit 4 export two-way light beam and are received respectively by the light intensity detector 5 and polarization detector 6, the light
Strong detector 5 measures the displacement of the light intensity of 3 back reflection laser of unit and hot spot on inspection, and the polarization detector 6 is measured through examining
The displacement of the polarization and hot spot of verification certificate 3 back reflection laser of member.
Preferably, the detection unit 3 includes the silicon plate 32 of surface coating silica film 31 and is respectively arranged on silicon
31 side of silica membrane on 32 surface of plate and the positive and negative electrode 33,34 of the silicon back other side, the positive and negative electrode 33,34
Copper sheet 35 and graphite flake 36 and graphite flake 36 including stacking are separately connected 32 back side of silicon plate and silica membrane 31,
The positive and negative electrode 33,34 is separately connected the positive and negative terminal of DC power supply.
Preferably, the graphite flake 36 with a thickness of 10nm~5mm, the silica membrane 31 is by magnetron sputtering legal system
It is standby, with a thickness of 1~100nm.
Preferably, the laser incident angle of the detection unit 3 is 0~90 °, the angle of incident light and reflected light is 0~
180°。
Preferably, the laser emitter 1 be small-power semiconductor laser transmitter, Output of laser wavelength be 200~
1800nm。
The laser of the laser transmitter projects of this identifier exposes to detection unit after lens focus, and detection unit passes through
Positive and negative electrode connects the positive and negative terminal of DC power supply, and the reflected light of detection unit exports two-beam after beam splitting unit, a branch of by light
Strong detector receives, and another beam is received by polarization detector, the output voltage of DC power supply is adjusted, with the voltage of DC power supply
Increase, this ancient Hansen offset phenomena occurs for the laser of unit after testing, measures hot spot by light intensity detector and polarization detector
Shift length, can determine whether silicon wafer to wherein the graphite flake of positive and negative electrode is for radiating according to the shift length of hot spot.
This identifier has light path element few, and system is simple, and reaction speed is fast, high reliablity, and cost of manufacture is low etc.
Advantage.
Claims (5)
1. a kind of silicon wafer is to identifier, it is characterised in that: this identifier include the laser emitter set gradually along beam direction,
The laser of lens, detection unit, beam splitting unit and light intensity detector and polarization detector, the laser transmitter projects passes through
The detection unit is exposed to after the lens focus, detection unit forms reflection light output to the beam splitting unit, beam splitting list
Member exports two-way light beam and is received respectively by the light intensity detector and polarization detector, and the light intensity detector is measured through examining
The light intensity of verification certificate member back reflection laser and the displacement of hot spot, the polarization detector measure the inclined of unit back reflection laser on inspection
The displacement of vibration and hot spot.
2. silicon wafer according to claim 1 is to identifier, it is characterised in that: the detection unit includes surface coating dioxy
The silicon plate of SiClx film and it is respectively arranged on the silica membrane side of silicon plate surface and the positive negative electricity of the silicon back other side
Pole, the positive and negative electrode includes the copper sheet being laminated and graphite flake and graphite flake is separately connected the silicon back and silica
Film, the positive and negative electrode are separately connected the positive and negative terminal of DC power supply.
3. silicon wafer according to claim 2 is to identifier, it is characterised in that: the graphite flake with a thickness of 10nm~5mm,
The silica membrane is prepared by magnetron sputtering method, with a thickness of 1~100nm.
4. silicon wafer according to claim 1,2 or 3 is to identifier, it is characterised in that: the laser light incident of the detection unit
Angle is 0~90 °, and the angle of incident light and reflected light is 0~180 °.
5. silicon wafer according to claim 4 is to identifier, it is characterised in that: the laser emitter is small-power semiconductor
Laser emitter, Output of laser wavelength are 200~1800nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910129809.7A CN109827961B (en) | 2019-02-21 | 2019-02-21 | Silicon crystal orientation identifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910129809.7A CN109827961B (en) | 2019-02-21 | 2019-02-21 | Silicon crystal orientation identifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109827961A true CN109827961A (en) | 2019-05-31 |
| CN109827961B CN109827961B (en) | 2021-08-13 |
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ID=66864116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910129809.7A Active CN109827961B (en) | 2019-02-21 | 2019-02-21 | Silicon crystal orientation identifier |
Country Status (1)
| Country | Link |
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| CN (1) | CN109827961B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115753646A (en) * | 2022-11-24 | 2023-03-07 | 福州大学 | Photoelectric method for distinguishing p-type gallium arsenide crystal orientation |
Citations (4)
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|---|---|---|---|---|
| CN101241017A (en) * | 2008-03-13 | 2008-08-13 | 上海交通大学 | Micro-displacement measurement method based on guided mode excitated Goos-Hanchen shift enhancement effect |
| US20140092377A1 (en) * | 2012-09-28 | 2014-04-03 | Corning Incorporated | Systems and methods for measuring birefringence in glass and glass-ceramics |
| US20140246590A1 (en) * | 2011-09-07 | 2014-09-04 | Toshihiro Ishii | Moisture sensor, moisture detector, and image forming apparatus |
| CN107764442A (en) * | 2017-09-29 | 2018-03-06 | 上海理工大学 | Reflective optic pressure sensor |
-
2019
- 2019-02-21 CN CN201910129809.7A patent/CN109827961B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101241017A (en) * | 2008-03-13 | 2008-08-13 | 上海交通大学 | Micro-displacement measurement method based on guided mode excitated Goos-Hanchen shift enhancement effect |
| US20140246590A1 (en) * | 2011-09-07 | 2014-09-04 | Toshihiro Ishii | Moisture sensor, moisture detector, and image forming apparatus |
| US20140092377A1 (en) * | 2012-09-28 | 2014-04-03 | Corning Incorporated | Systems and methods for measuring birefringence in glass and glass-ceramics |
| CN107764442A (en) * | 2017-09-29 | 2018-03-06 | 上海理工大学 | Reflective optic pressure sensor |
Non-Patent Citations (3)
| Title |
|---|
| XINBING JIAO ET AL.: "Optical beam shift induced by direct current", 《PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE》 * |
| 郝蕊蕊 等: "基于电压影响下圆偏振激光束的特性", 《光学仪器》 * |
| 闫军锋: "《电子材料与器件实验教程》", 31 May 2016, 西安电子科技大学出版社 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115753646A (en) * | 2022-11-24 | 2023-03-07 | 福州大学 | Photoelectric method for distinguishing p-type gallium arsenide crystal orientation |
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| Publication number | Publication date |
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| CN109827961B (en) | 2021-08-13 |
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