CN109824867B - Preparation method and application of photosensitive resin with low dielectric constant/dielectric loss - Google Patents
Preparation method and application of photosensitive resin with low dielectric constant/dielectric loss Download PDFInfo
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Abstract
The invention relates to the field of photosensitive covering materials, and aims to solve the problem of overlarge dielectric constant/dielectric loss of photosensitive resin in the prior art, the invention provides a preparation method of photosensitive resin with low dielectric constant/dielectric loss, which comprises the steps of dissolving fluorinated epoxy resin and fluorine-free epoxy resin in a solvent, reacting with unsaturated monocarboxylic acid at the reaction temperature of 70-140 ℃ for 1-10 hours under the action of a catalyst, and then reacting with acid anhydride-containing substances at the reaction temperature of 70-140 ℃ for 1-10 hours to obtain the photosensitive resin with low dielectric constant/dielectric loss. The photosensitive resin with good bending resistance and chemical resistance is prepared. Meanwhile, the invention also provides the application of the photosensitive ink prepared from the photosensitive resin with low dielectric constant/dielectric loss on a circuit board, which not only ensures the heat resistance and chemical resistance of the ink on the circuit board, but also ensures the bending resistance of the ink after curing.
Description
Technical Field
The invention relates to the field of photosensitive covering materials, in particular to a preparation method and application of photosensitive resin with low dielectric constant/dielectric loss.
Background
The FPC is also called a flexible printed circuit board, is a printed circuit board made of flexible insulating base materials, has high wiring density, light weight, thin thickness and good bending property, can greatly reduce the volume of electronic products, and meets the requirements of the development of the electronic products towards high density, miniaturization and high reliability. Therefore, the FPC is widely applied to the fields or products of aerospace, military, mobile communication, portable computers, computer peripherals, smart phones, digital cameras and the like. With the demand for consumer electronics, FPCs will also be developed towards ultra-high density. Compared with the 4G era, the 5G has the technical points that indexes such as high frequency, high speed, loss, difference loss and the like are integrally promoted to one level, at present, a medium-loss material is still adopted, the low-loss material application is started at the back, and the requirements of FPC processing, precision, tolerance and the like are improved; meanwhile, the value of a single base station is also increasing, so that the overall market size is a qualitative change compared to 4G, and the development of high frequency FPCs requires FPCs with low dielectric constant/dielectric loss factor (Dk/Df) performance.
Low dielectric constant/dielectric dissipation factor LCP (Liquid Crystal Polymer) or tetrafluoroethylene is used in the material industry, but the solder resist layer on these materials is still a cover film or solder resist ink. The cover film is a PI (polyimide) film, the dielectric constant of the conventional polyimide is 3.5 or more, the dielectric loss factor is more than 0.010, most of the solder resist ink is conventional epoxy acrylic resin, most of the dielectric constant is also more than 3.5, and the dielectric loss factor is more than 0.010.
The traditional FPC solder resist ink takes modified bisphenol A type epoxy resin or modified bisphenol F type epoxy resin as a starting material, unsaturated bonds and carboxyl groups are connected to the starting material to serve as photosensitive resin, the heat resistance, the chemical resistance and the bending resistance of the synthesized photosensitive resin can be realized, but the dielectric constant/the dielectric loss is overlarge.
Disclosure of Invention
The invention provides a preparation method of photosensitive resin with low dielectric constant/dielectric loss, aiming at solving the problem of overlarge dielectric constant/dielectric loss of photosensitive resin in the prior art, and the photosensitive resin with good bending resistance and chemical resistance is prepared.
Meanwhile, the invention also provides the application of the photosensitive ink prepared from the photosensitive resin with low dielectric constant/dielectric loss on a circuit board, which not only ensures the heat resistance and chemical resistance of the ink on the circuit board, but also ensures the bending resistance of the ink after curing.
The invention is realized by the following technical scheme: the preparation method of the photosensitive resin with low dielectric constant/dielectric loss comprises the following steps: dissolving fluorinated epoxy resin and fluorine-free epoxy resin in a solvent, reacting with unsaturated monocarboxylic acid at the reaction temperature of 70-140 ℃ for 1-10 hours under the action of a catalyst, and then reacting with an anhydride-containing substance at the reaction temperature of 70-140 ℃ for 1-10 hours to obtain the photosensitive resin with low dielectric constant/dielectric loss.
The weight parts of the reaction components are as follows:
preferably, the weight parts of each reaction component are as follows:
the epoxy resin comprises one or more of diphenol hexafluoropropane diglycidyl ether, 1, 3-bis (3-glycidyl ether tetrafluorophenoxy) -2-hydroxypropane, 1, 4-bis (hydroxyhexafluoroisopropyl) benzene diglycidyl ether, 1, 3-bis (hydroxyhexafluoroisopropyl) n-perfluoropropyl benzene diglycidyl ether, 1, 4-bis (hydroxyhexafluoroisopropyl) tetrafluorobenzene diglycidyl ether, 4 '-dihydroxyoctafluorobiphenyl diglycidyl ether and 4, 4' -bis (hydroxyhexafluoroisopropyl) octafluorobiphenyl diglycidyl ether; any fluorine-modified epoxy resin falls within this category.
In order to reduce the cost, the fluorine-free epoxy resin can be partially selected and used, and the fluorine-free epoxy resin comprises one or more of bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol AD epoxy resin, bisphenol S epoxy resin, resorcinol type epoxy resin, hydrogenated bisphenol A epoxy resin, organic silicon modified epoxy resin, o-cresol formaldehyde epoxy resin, phenol formaldehyde epoxy resin, resorcinol formaldehyde epoxy resin, biphenyl epoxy resin, other polyphenol type glycidyl ether epoxy resin, aliphatic glycidyl ether epoxy resin and epoxidized olefin compound;
the catalyst is selected from one or more of dimethylbenzylamine, triphenylphosphine, (S) - (+) -N, N-dimethyl-1- (2-diphenylphosphino) ferrocene ethylamine, (R) -NN-dimethyl-1- ((S) -2-diphenylphosphino) ferrocene) ethylamine, 1' -bis (diphenylphosphino) ferrocene, 2- (diphenylphosphino) ethylamine, N-dimethylethanolamine, N-dimethylformamide, triethylamine, triethanolamine, trimethylbenzylammonium chloride, trimethylbenzylammonium bromide, triethylbenzylammonium chloride and triethylbenzylammonium bromide;
the solvent is selected from one or more of ketones, alcohols, esters, ethers, benzenes and petroleum; preferably, the solvent includes ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate, dipropylene glycol monobutyl ether acetate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monobutyl ether, gamma-butyrolactone, N-methyl-2-pyrrolidone, dimethylformamide, DBE, dimethylacetamide, ethylene glycol monobutyl ether, and mixtures thereof, One or more of dimethylpropionamide.
The acid anhydride-containing substance comprises one or more of phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, maleic anhydride, elaeostearic anhydride, alkylene succinic anhydride, methyl tetrahydrophthalic anhydride, methyl hexahydrophthalic anhydride, nadic anhydride, methyl nadic anhydride, glutaric anhydride, terpene anhydride, methyl cyclohexene tetracarboxylic dianhydride, dodecenyl succinic anhydride, trimellitic anhydride, hydrogenated trimellitic anhydride, pyromellitic dianhydride, hydrogenated pyromellitic dianhydride, benzophenonetetracarboxylic dianhydride, polyazelaic anhydride, polysebacic anhydride, ethylene glycol bistrimellitic anhydride ester, glycerol trimetallic anhydride ester, diphenyl sulfone tetracarboxylic dianhydride, polyhexamic anhydride, polyazelaic anhydride, polysebacic anhydride, trialkyl tetrahydrophthalic anhydride.
The photosensitive resin with low dielectric constant/dielectric loss prepared by the preparation method of the photosensitive resin with low dielectric constant/dielectric loss is applied to a circuit board. The photosensitive ink on the circuit board is prepared by the photosensitive resin prepared by the invention, the fluorine-containing epoxy resin or the fluorine-containing epoxy resin and the fluorine-free epoxy resin are mixed and matched to be used as the starting material of the photosensitive resin, and the liquid photosensitive solder resist ink which is used as the main raw material is subjected to photocuring and thermocuring, has excellent heat resistance, chemical resistance and flexibility, also has certain flame retardance, and is suitable for being used on the circuit board.
The photosensitive ink is prepared by mixing the following components in parts by weight:
preferably, the photosensitive ink is prepared by mixing the following components in parts by weight:
the fluorinated epoxy resin is selected from one or more of diphenol hexafluoropropane diglycidyl ether, 1, 3-bis (3-glycidyl ether tetrafluorophenoxy) -2-hydroxypropane, 1, 4-bis (hydroxyhexafluoroisopropyl) benzene diglycidyl ether, 1, 3-bis (hydroxyhexafluoroisopropyl) n-perfluoropropyl benzene diglycidyl ether, 1, 4-bis (hydroxyhexafluoroisopropyl) tetrafluorobenzene diglycidyl ether, 4, -dihydroxyoctafluorobiphenyl diglycidyl ether, 4, -bis (hydroxyhexafluoroisopropyl) octafluorobiphenyl diglycidyl ether;
the fluorine-free epoxy resin is selected from one or more of bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol AD epoxy resin, bisphenol S epoxy resin, resorcinol type epoxy resin, hydrogenated bisphenol A epoxy resin, biphenyl epoxy resin, organic silicon modified epoxy resin, o-cresol formaldehyde epoxy resin, phenol formaldehyde epoxy resin, resorcinol formaldehyde epoxy resin, other polyphenol type glycidyl ether epoxy resin, aliphatic glycidyl ether epoxy resin and epoxidized olefin compound;
the photoinitiator is selected from 2-hydroxy-methyl phenyl propane-1-ketone (photoinitiator-1173), 1-hydroxy cyclohexyl phenyl ketone (photoinitiator-184), 2-methyl-1- (4-methylthiophenyl) -2-morpholinyl-1-acetone (photoinitiator-907), benzoin dimethyl ether BDK (photoinitiator-651), 2, 4, 6-trimethyl benzoyl diphenyl phosphine oxide (photoinitiator-1110), isopropyl thioxanthone (2, 4 isomeric mixture) ITX (photoinitiator-1105), ethyl 4- (N, N-dimethylamino) benzoate EPD (photoinitiator-1101), benzophenone B, benzophenone BP, BZO (photoinitiator-1220), 4-chloro benzophenone (photoinitiator-1046), Methyl o-benzoylbenzoate (photoinitiator-1156), diphenyliodonium salt hexafluorophosphate (photoinitiator-810), 4-phenylbenzophenone (photoinitiator-PBZ), 2, 4, 6-trimethylbenzoyl-diphenylphosphine oxide (photoinitiator-TPO), ethyl 2, 4, 6-trimethylbenzoylphenylphosphonate (photoinitiator-TPO-L), 20% of 1-hydroxycyclohexylphenylketone 80% of 2-methyl-2-hydroxy-1-phenyl-1-propanone (photoinitiator-1000), 50% of TPO; 50% of 1173 (photoinitiator-4265), a photoinitiator-DETX, p-isooctyl N, N-dimethylaminobenzoate (photoinitiator-EHA), 4-methylbenzophenone (photoinitiator-MBZ), methyl o-benzoylbenzoate (photoinitiator-OMBB), bis (1- (2, 4-difluorophenyl) -3-pyrrolyl) titanocene and hexaaryldiimidazole.
The acrylic monomer is selected from the group consisting of tetrahydrofuran acrylate, 2-phenoxyethyl acrylate, acrylic acid, isobornyl methacrylate, methacrylic acid, caprolactone acrylate, isobornyl acrylate, trimethylolpropane formal acrylate, alkoxynonylphenol acrylate, triethylene glycol dimethacrylate, 1, 6-hexanediol diacrylate, 1, 3-butanediol dimethacrylate, trimethylolpropane triacrylate, pentaerythritol triacrylate, (3) ethoxylated trimethylolpropane triacrylate (E03TMPTA), (9) ethoxylated trimethylolpropane triacrylate (EO9TMPTA), (3) propoxylated trimethylolpropane triacrylate (PO3TMPTA), dipentaerythritol hexaacrylate, caprolactone-modified dipentaerythritol hexaacrylate, pentaerythritol tetraacrylate, and mixtures thereof, One or more of dipentaerythritol pentaacrylate, tris (2-hydroxyethyl) isocyanurate, trimethylolpropane trimethacrylate, trimethylolpropane triacrylate, (2) propoxy neopentyl glycol diacrylate (PO2-NPGDA), polyethylene glycol (600) diacrylate, 1, 3-butanediol dimethacrylate.
The filling material is selected from one or more of barium sulfate, silicate and calcium carbonate; preferably, the inorganic filler is one or more selected from the group consisting of clay, talc, mica powder, asbestos powder, silica, calcium hydroxide, magnesium hydroxide, calcium carbonate, barite powder, montmorillonite, and the like.
The organic solvent is selected from ketone, alcohol, ester, ether, benzene and petroleum solvents; preferably, the solvent includes ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate, dipropylene glycol monobutyl ether acetate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monobutyl ether, gamma-butyrolactone, N-methyl-2-pyrrolidone, dimethylformamide, dimethylacetamide, ethylene glycol monobutyl ether, propylene glycol monobutyl ether, and mixtures thereof, One or more of dimethylpropionamide.
The pigment comprises an organic pigment or an inorganic pigment; among them, the inorganic pigment is preferably one selected from the group consisting of oxides, chromates, sulfates, carbonates, silicates, borates, molybdates, phosphates, vanadates, ferricyanates, hydroxides, sulfides, metals, carbon black, and titanium dioxide. Organic pigments can be classified into azo pigments, phthalocyanine pigments, polycyclic pigments such as anthraquinone, indigo, and quinacridone pigments, and arylmethane pigments, depending on the chemical structure of the compound.
The auxiliary agent is selected from one or more of an accelerator, a defoaming agent, a leveling agent and a dispersing agent; the defoaming agent is mainly an organic silicon defoaming agent or an acrylic defoaming agent, and the defoaming agent, the leveling agent and the dispersing agent are used for leveling and polishing the surface of the photosensitive covering material after printing.
The flame retardant is selected from one or more of phosphorus flame retardants and nitrogen flame retardants. The phosphorus flame retardant comprises inorganic phosphorus flame retardant and organic phosphorus flame retardant, the common varieties of the nitrogen flame retardant comprise melamine, Melamine Cyanurate (MCA) and the like, and one or more of the melamine cyanurate and the melamine cyanurate can be added or not added.
Compared with the prior art, the invention has the beneficial effects that:
(1) the photosensitive resin has the advantages of light curing, alkaline water developing property and the like;
(2) the photosensitive ink produced by using the photosensitive resin has the advantages of low dielectric constant/dielectric loss factor, excellent flexibility, good heat resistance, chemical resistance, certain flame retardance and the like.
Detailed Description
The technical scheme of the invention is further described by combining the following examples, and the raw materials used in the examples can be purchased in the market or prepared by adopting a conventional method.
Example 1
100 g of solvent diethylene glycol ethyl ether acetate is poured into a three-neck flask, 100 g of diphenol hexafluoropropane diglycidyl ether is added, the mixture is slowly heated to 120 ℃ and dissolved, 32.4 g of acrylic acid and 1 g of triphenyl phosphine are added to react for 4 hours at 120 ℃, 50 g of anhydride-containing tetrahydrophthalic anhydride is added to react for 8 hours at 120 ℃, and the photosensitive resin 1 with low dielectric constant/dielectric loss is obtained.
Example 2
DBE80 g is poured into a three-neck flask, 100 g of 1, 3-bis (3-glycidyl ether tetrafluorophenoxy) -2-hydroxypropane is added, the temperature is slowly heated to 100 ℃, 32.7 g of methacrylic acid and 5g of dimethylbenzylamine are added after the dissolution is finished, the mixture reacts for 4 hours at 100 ℃, 40 g of phthalic anhydride containing acid anhydride substance is added, and the reaction is carried out for 5 hours at 100 ℃, so that the photosensitive resin 2 with low dielectric constant/dielectric loss is obtained.
Example 3
60 g of diethylene glycol monomethyl ether is poured into a three-neck flask, 100 g of 1, 4-bis (hydroxyhexafluoroisopropyl) tetrafluorobenzene diglycidyl ether and 10 g of biphenyl epoxy resin are added, the mixture is slowly heated to 140 ℃ and dissolved, 30 g of pentenoic acid and 10 g of triethylamine are added to react for 4 hours at 140 ℃, 30 g of anhydride-containing methyl tetrahydrophthalic anhydride is added to react for 3 hours at 140 ℃, and the photosensitive resin 3 with low dielectric constant/dielectric loss is obtained.
Comparative example 1
Pouring 100 g of DBE into a three-neck flask, adding 100 g of bisphenol A epoxy resin, slowly heating to 120 ℃, after dissolution, adding 30 g of acrylic acid, 1 g of triphenylphosphine, reacting at 120 ℃ for 4 hours, adding 50 g of anhydride-containing tetrahydrophthalic anhydride, heating to 100 ℃ and 120 ℃, and reacting for 5 hours to obtain the resin 1.
Comparative example 2
Pouring 100 g of DBE into a three-neck flask, adding 100 g of bisphenol F epoxy resin, slowly heating to 120 ℃, after dissolution, adding 35 g of acrylic acid, 1 g of triphenylphosphine, reacting at 120 ℃ for 4 hours, adding 50 g of anhydride-containing tetrahydrophthalic anhydride, heating to 100 ℃ and 120 ℃, and reacting for 5 hours to obtain resin 2.
Test example
The photosensitive resins prepared in examples 1, 2 and 3 and comparative examples 1 and 2 were mixed with 2-methyl-1- (4-methylthiophenyl) -2-morpholino-1-propanone, (9) ethoxylated trimethylolpropane triacrylate, YX-4000 (biphenyl epoxy resin), carbon black, magnesium hydroxide, melamine, and defoamer KS-66, respectively, and then the mixture was ground with a three-roll mill to obtain different photosensitive inks with numbers of A, B, C, D, E, respectively. The formulation tables are shown in table 1, all in parts by weight.
Table 1:
evaluation of Experimental Properties
A to E were printed on PI (Poly) for 5 experiments in totalImide), the ink thickness is 20-25 μm, baking is carried out for 30 minutes at 75 ℃, and then the ink is baked for 500mj/cm2And finally cured in a hot air circulation oven at 150 ℃ for 60 minutes. The following performance tests were respectively performed:
firstly, chemical resistance:
the room temperature was 20. + -. 5 ℃.
Second, heat resistance
Third, electrical characteristics
Fourth, environmental characteristics
| A | B | C | D | E | |
| Dk | 2.7 | 2.7 | 2.9 | 4.1 | 3.9 |
| Df | 0.001 | 0.001 | 0.003 | 0.015 | 0.013 |
Fifthly, bending resistance: the sheet is folded at an angle of 180 degrees, and the standard is that no crack is formed.
Sixthly, testing flame retardance: the inspection basis is as follows: vertical burning test of UL94, Chapter 11 thin Material
From the above experimental results, it can be seen that the above 5 tests can satisfy the requirements of chemical resistance, flexibility, heat resistance, electrical characteristics, and environmental characteristics after photo-curing and thermal curing. The flexibility of the photosensitive covering material of a mixture consisting of a fluorine-containing photosensitive material, a photoinitiator, epoxy resin, a filling material, a solvent, an unsaturated monomer, toner and an auxiliary agent meets the application requirement on a circuit board, the flame retardance can pass VTM-2, and the low dielectric constant/dielectric loss factor is less than 3.0/0.003. The performance of the photosensitive covering material of a mixture consisting of photosensitive resin synthesized by fluorine-containing epoxy resin and fluorine-free epoxy resin, a photoinitiator, the epoxy resin, a filling material, a solvent, an unsaturated monomer, toner and an auxiliary agent meets the application requirement of a circuit board, the flame retardance can pass VTM-2, the low dielectric constant/dielectric loss factor is 2.9/0.003, and the photosensitive covering material is lower than the photosensitive resin synthesized by the fluorine-free epoxy resin.
Claims (1)
1. A method for preparing photosensitive resin with low dielectric constant/dielectric loss is characterized by comprising the following steps: pouring 80 g of DBE into a three-neck flask, adding 100 g of 1, 3-bis (3-glycidyl ether tetrafluorophenoxy) -2-hydroxypropane, slowly heating to 100 ℃, after dissolution, adding 32.7 g of methacrylic acid and 5g of dimethylbenzylamine, reacting for 4 hours at 100 ℃, adding 40 g of phthalic anhydride containing acid anhydride, and reacting for 5 hours at 100 ℃ to obtain the photosensitive resin with low dielectric constant/dielectric loss.
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| CN111004376A (en) * | 2019-12-19 | 2020-04-14 | 福建拓烯新材料科技有限公司 | Preparation method of fluorine-containing alkali-soluble UV resin and UV ink composition of resin |
| CN111087762A (en) * | 2020-01-02 | 2020-05-01 | 广东盈骅新材料科技有限公司 | Fluorine-containing epoxy resin composite material and application thereof |
| CN111440575B (en) * | 2020-03-27 | 2021-07-27 | 顺德职业技术学院 | Special low-dielectric high-thermal-conductivity underfill adhesive for chip packaging |
| CN113512367A (en) * | 2021-08-04 | 2021-10-19 | 苏州城邦达益材料科技有限公司 | High-frequency photosensitive cover film and application thereof |
| CN113817138A (en) * | 2021-08-30 | 2021-12-21 | 湖南昕逸辰科技有限公司 | UV-cured fingerprint-resistant resin with high fluorine content and preparation method and application thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001253928A (en) * | 2000-03-10 | 2001-09-18 | Nippon Kayaku Co Ltd | Resin, resin composition, its film and cured material |
| CN102681344A (en) * | 2011-03-10 | 2012-09-19 | 罗门哈斯电子材料韩国有限公司 | Photosensitive resin composition, low dielectric constant light shielding layer and liquid crystal display apparatus using the same |
| CN103289058A (en) * | 2013-06-06 | 2013-09-11 | 京东方科技集团股份有限公司 | Fluorine-modified epoxy acrylate resin, ultraviolet curable gloss oil and preparation method thereof, and method for coating gloss oil on substrate |
| CN103616798A (en) * | 2013-11-20 | 2014-03-05 | 张高源 | Photosensitive resin with flame retardant property and application thereof in production of photosensitive ink |
| CN108997560A (en) * | 2017-06-07 | 2018-12-14 | 洛阳尖端技术研究院 | A kind of epoxy resin composite material and its preparation method and application |
-
2019
- 2019-01-23 CN CN201910065794.2A patent/CN109824867B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001253928A (en) * | 2000-03-10 | 2001-09-18 | Nippon Kayaku Co Ltd | Resin, resin composition, its film and cured material |
| CN102681344A (en) * | 2011-03-10 | 2012-09-19 | 罗门哈斯电子材料韩国有限公司 | Photosensitive resin composition, low dielectric constant light shielding layer and liquid crystal display apparatus using the same |
| CN103289058A (en) * | 2013-06-06 | 2013-09-11 | 京东方科技集团股份有限公司 | Fluorine-modified epoxy acrylate resin, ultraviolet curable gloss oil and preparation method thereof, and method for coating gloss oil on substrate |
| CN103616798A (en) * | 2013-11-20 | 2014-03-05 | 张高源 | Photosensitive resin with flame retardant property and application thereof in production of photosensitive ink |
| CN108997560A (en) * | 2017-06-07 | 2018-12-14 | 洛阳尖端技术研究院 | A kind of epoxy resin composite material and its preparation method and application |
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