CN109822450A - Single-sided polishing multi-wafer thickness compensation device and milling apparatus and grinding method - Google Patents
Single-sided polishing multi-wafer thickness compensation device and milling apparatus and grinding method Download PDFInfo
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- CN109822450A CN109822450A CN201711183085.1A CN201711183085A CN109822450A CN 109822450 A CN109822450 A CN 109822450A CN 201711183085 A CN201711183085 A CN 201711183085A CN 109822450 A CN109822450 A CN 109822450A
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- chip
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- holding tank
- carrier
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
Abstract
The present invention relates to wafer preparation technical field more particularly to a kind of single-sided polishing multi-wafer thickness compensation devices and milling apparatus and grinding method.The device includes carrier, multiple chip holding tanks are offered on the carrier, crystal chip bearing pad and telescoping mechanism are equipped in the chip holding tank, first face of the crystal chip bearing pad is for installing chip to be ground, second face of the crystal chip bearing pad is connected with the telescopic end of the telescoping mechanism, and can move back and forth along longitudinal direction under telescopic end drive；The carrier is equipped with the connector for the carrier to be connected with the grinding head of milling apparatus.The milling apparatus comprising milling apparatus ontology, the grinding head on the milling apparatus ontology and above-mentioned single-sided polishing multi-wafer thickness compensation device.The working face of each chip to be ground can be automatically adjusted to be located in same level by the thickness compensation device, reduce manpower and material resources cost, the milling apparatus and grinding method simplify processing step.
Description
Technical field
The present invention relates to wafer preparation technical field more particularly to a kind of single-sided polishing multi-wafer thickness compensation device and
Chemical-mechanical grinding device and grinding method.
Background technique
In semiconductor or wafer production manufacturing field, chemical mechanical grinding (CMP) is to realize the planarization of wafer or substrate
With the main technique of polishing.In general, chemical mechanical milling tech is to be connected by wafer or substrate with the grinding pad of equipment
Touch and be added lapping liquid, using relative motion, by the collective effect of both chemical attack and mechanical removal reach planarization with
The purpose of polishing.
For being produced to improve in some production fields, the especially abrasive polishing process of small size (4~6 cun) chip
Can, often by the way of more wafers simultaneous grinding or polishing.As illustrated in figs. 1A and ib, multi-disc chip 2 to be ground is ground
Grinding and polishing light can generally use a carrier 1, and more wafers 2 are carried and are fixed, and then equipment applies certain pressure 3 to carrier 1, make
Chip 2 is contacted with grinding pad (not shown) and is ground.Common single side milling apparatus is that carrier 1 is loaded in grinding to set
On standby grinding head, carrier is driven to be ground (usually spin finishing) by grinding head, grinding head generally has multiple (2~4
It is a), thus a set of single side milling apparatus can load multiple carriers, then by the to be ground face-down of chip 2, with lower section abrasive disk
Grinding pad contact on 5, applies certain pressure 3, is polished directly by relative motion (as rotated).On the same carrier
When loading more wafers, since wafer thickness is inconsistent, during actual grinding, relatively thin chip is then difficult to pad with grinding
Now good contact, or carrier has certain inclination (as shown in Figure 1 b) under larger pressure, and chip working face is made to be inclined
Tiltedly grinding, therefore its grinding rate and uniformity can all be deteriorated.
To avoid the above problem, the prior art would generally carry out the thickness sorting of chip before grinding and polishing, according to equipment
And technique requirement, setting grouping thickness are such as thickness difference 20um points one group, 10um points one group or finer to 2um points one group.This
Sample just needs to increase equipment or manually carries out special thickness sorting, and grouping thickness is finer, and workload is bigger, needs
Memory space it is also more.For example upstream supplied materials wafer thickness is needed in 500~600um, grinding and polishing with thickness difference 10um
It is one group, then needs to be divided into 10 groups, if needs 50 groups with 2um points one group, considerably increasing workload and manpower and material resources.
And as shown in Figures 2 and 3, commonly used in needing to paste a layer wafer bearing pads 6 ' on the carrier of single-sided polishing,
Crystal chip bearing pad 6 ' above can carry out aperture according to wafer size, shape and quantity, and the chip holding tank 7 ' being fabricated to one by one comes
Carrying and fixed wafer 2.If supplied materials wafer thickness is different, to guarantee that chip has enough thickness to protrude into chip in grinding
Except holding tank again, it is necessary to customize the chip holding tank of different depth, i.e., different types of crystal chip bearing pad thus increases
Material resources cost and process complexity.
Summary of the invention
(1) technical problems to be solved
In view of the drawbacks of the prior art, the present invention provides a kind of single-sided polishing multi-wafer thickness compensation devices, with solution
Certainly existing wafer grinding equipment is difficult to the problem adjusted the working face of each chip to be ground to being located in same level, in turn
Solve the problems, such as that existing wafer grinding equipment manpower and material resources higher cost and technique are more complex.
It is based on the thickness compensation device simultaneously, the present invention also provides a kind of chemical-mechanical grinding devices and chemical machinery to grind
Mill method, so that the adjustment of chip working face to be ground is more intelligent, automation.
(2) technical solution
In order to solve the above-mentioned technical problems, the present invention provides a kind of single-sided polishing multi-wafer thickness compensation device, packets
Carrier is included, multiple chip holding tanks are offered on the carrier, are equipped with crystal chip bearing pad and telescopic machine in the chip holding tank
Structure, the first face of the crystal chip bearing pad are stretched for installing chip to be ground, the second face of the crystal chip bearing pad with described
The telescopic end of mechanism is connected, and can move back and forth along longitudinal direction under telescopic end drive, and then drive the crystal chip bearing
Pad moves back and forth in the longitudinal direction, is adjusted with being embedded into the depth in chip holding tank to the chip to be ground, and then make
The working face protrusion chip holding tank of each chip to be ground simultaneously keeps the working face of each chip to be ground in the same plane；
The carrier is equipped with the connector for the carrier to be connected with the grinding head of milling apparatus.The carrier can be by described
Connector is installed on grinding head, drives the carrier of the compensation device to be ground by grinding head.
It should be noted that since crystal chip bearing pad is in cushion, two plane (the first faces of the crystal chip bearing pad
With the second face) it is oppositely arranged.
Further, the first face and the second face of the crystal chip bearing pad are horizontal plane, and the telescoping mechanism stretches
It holds and is vertically arranged with the second face of crystal chip bearing pad.
Further, the telescoping mechanism is cylinder, and the telescopic end of the telescoping mechanism is piston rod；Or, described flexible
Mechanism is the servo motor with lead screw, and the telescopic end of the telescoping mechanism is the lead screw.
Further, fixed institute is installed coated with wax layer or using liquid interfacial tension in the first face of the crystal chip bearing pad
State chip to be ground.
The present invention also provides a kind of chemical-mechanical grinding devices comprising milling apparatus ontology is set set on the grinding
Grinding head and above-mentioned single-sided polishing multi-wafer thickness compensation device on standby ontology.
Further, the single-sided polishing is face-up with the work of the chip to be ground on multi-wafer thickness compensation device
Or downward；That is: " work of chip to be ground is face-up " represents the top that abrasive disk is located at chip to be ground, " chip to be ground
Work it is face-down " represent the lower section that abrasive disk is located at chip to be ground.
Further, the milling apparatus ontology is equipped with telescoping mechanism control unit, information memory cell, data processing
Unit and the grinding control unit instructed for issuing grinding；
For the information memory cell for storing standby message, the standby message includes: the volume of each chip to be ground
The number data of number, thickness data and its carrier at place and chip holding tank；
The data processing unit and information memory cell are communicated to connect to obtain the standby message, and to each described
The thickness data of chip to be ground carries out data processing, and insertion needed for determining each chip to be ground according to data processed result
To the depth in corresponding chip holding tank；
The telescoping mechanism control unit communicates to connect embedding needed for each chip to be ground to obtain with data processing unit
Enter to the depth data in chip holding tank, and communicates to connect with telescoping mechanism according to acquired depth data control
The telescopic end of telescoping mechanism is made longitudinal direction and is moved back and forth, and is carried out with being embedded into the depth in chip holding tank to each chip to be ground
Adjustment；
The carrier is connect to inform grinding control unit when grinding preparation and completing with grinding control unit communication.
Further, which further includes cable, and the telescoping mechanism is by the cable and stretches
The connection of mechanism controls unit communication, the carrier are communicated to connect by the cable and milling apparatus ontology.
Further, the cable is set in the connector.
The present invention also provides a kind of chemical and mechanical grinding method carried out based on above-mentioned chemical-mechanical grinding device,
Include the following steps:
S1: the number of each chip to be ground is obtained, and the thickness of each chip to be ground is measured, then
The number of the chip to be ground and thickness data are uploaded to the information memory cell；
S2: chip to be ground is installed to crystal chip bearing pad, and the carrier is installed to by the connector and is ground
On bistrique；
S3: the number of the carrier and chip holding tank where each chip is recorded respectively by the information memory cell；
S4: the data processing unit is communicated with information memory cell to obtain the number number of each chip to be ground
According to the number data of the carrier and chip holding tank at, thickness data and its place, and to the thickness data of the chip to be ground
Carry out data processing, the depth being embedded into chip holding tank needed for determining each chip to be ground according to data processed result
Degree；
S5: it is communicated to connect by telescoping mechanism control unit one end and data processing unit identified each to obtain
The depth data being embedded into chip holding tank needed for a chip to be ground, the other end and telescoping mechanism are communicated to connect according to institute
The depth data obtained is made longitudinal to move back and forth to each chip to be ground to control the telescopic end of telescoping mechanism
The depth being embedded into chip holding tank is adjusted, and so that the working face of each chip to be ground is protruded chip holding tank and is made same
The working face of each chip to be ground is in the same plane on one carrier；
S6: the carrier is informed that grinding control unit grinding preparation is complete with grinding control unit communication
At then the grinding control unit issues grinding instruction, so that the grinding head drives the carrier to carry out conventional chemistry
Mechanical lapping.
Further, in step S4, the data processing is specially according to the thickness value of all chips to be ground and wait grind
The height value that mill chip needs to protrude carrier calculates the depth for needing to be embedded in per a piece of chip to be ground in chip holding tank；When
When depth in calculated chip insertion chip holding tank to be ground is lower than setting value, the chip to be ground is needed replacing to keep away
Exempt from the chip and skids off chip holding tank；It should be noted that the setting value can be 0.2mm, or smaller (such as 0.1mm
And following), or it is bigger (such as 0.3mm or more).
Further, in step S6, the grinding preparation, which refers to, is embedded into chip holding tank to each chip to be ground
The adjustment work of interior depth.Further, step S7, the step S7 are additionally provided with after the step S6 are as follows: repeat above-mentioned
Step S1~S6, to realize continuous production.
Further, in the step S1, the model of each chip to be ground is obtained by code reader.
(3) beneficial effect
Above-mentioned technical proposal of the invention has the advantages that
1, thickness compensation device of the invention drives crystal chip bearing pad to make on longitudinal direction by setting telescoping mechanism, telescoping mechanism
Move back and forth, and then drive chip to be ground make it is longitudinal move back and forth, being embedded into chip to treat grinding wafers accommodates
Depth in slot is adjusted, and the working face of each chip to be ground can be made to protrude chip holding tank during adjustment and made each
The working face of chip to be ground is in the same plane, and grinding operation can be completed in carrier under the drive of grinding head, and grinding is thrown
It ensure that chip and grinding pad keep good plane contact in photoreduction process, improve the process uniformity of chemical mechanical grinding,
The quality of wafer grinding polishing is optimized simultaneously.
2, multiple chip holding tanks are provided on the carrier in thickness compensation device of the invention, in each chip holding tank
A chip to be ground is accommodated, thus the grinding and polishing of chip can be carried out in batches, to further improve production capacity.
3, the present invention also provides a kind of chemical-mechanical grinding device, it is provided with telescoping mechanism control unit, information is deposited
Storage unit, data processing unit and grinding control unit, the thickness data of chip to be ground is stored using information memory cell；Benefit
Handle with the thickness data that data processing unit treats grinding wafers and then determine and is embedded into needed for each chip to be ground
Depth in chip holding tank；It recycles telescoping mechanism control unit to receive to be embedded into needed for identified each chip to be ground
Depth data in chip holding tank, and accordingly control telescoping mechanism telescopic end make it is longitudinal move back and forth with to it is each to
The depth that grinding wafers are embedded into chip holding tank is automatically adjusted, so that the working face of each chip to be ground be made to protrude
The working face of each chip to be ground is simultaneously automatically adjusted on same plane by chip holding tank, that is, realizes institute on same carrier
Need grinding wafers protrusion chip holding tank except part it is all identical or control in the error range that technique allows, thus reality
Show the automation of wafer position adjustment, and then eliminates the behaviour that the artificial or special equipment before CMP process carries out thickness sorting
Make, greatly reduces workload and manpower and material resources cost, simplify processing step, improve work efficiency, and then greatly improve
Production capacity.
4, above-mentioned chemical and mechanical grinding method provided by the invention is obtained based on above-mentioned milling apparatus, eliminates CMP
Sorting work before technique only needs a step thickness measure, can use above-mentioned thickness compensation device and treat grinding wafers
The depth being embedded in chip holding tank is automatically adjusted, and reaches technique requirement, and entire adjustment process realizes automation, is saved
It has gone unnecessary processing step and a large amount of manpower and material resources, has been promoted convenient for production capacity and production cost is greatly reduced.
Detailed description of the invention
Fig. 1 a is the structural schematic diagram (side view) of existing wafer grinding equipment；
Fig. 1 b is that the carrier in existing wafer grinding equipment becomes structural schematic diagram when tilting in stress；
Fig. 2 is the bottom view of the crystal chip bearing pad and chip holding tank in existing wafer grinding equipment；
Fig. 3 is the side view of the crystal chip bearing pad and chip holding tank in existing wafer grinding equipment；
Fig. 4 is the structural schematic diagram (side view of single-sided polishing multi-wafer thickness compensation device described in the embodiment of the present invention
Figure)；
Wherein, 1, carrier；2, chip to be ground；The working face of 2-1, chip to be ground；3, to load in existing milling apparatus
Has the pressure applied；5, abrasive disk；6 ', the crystal chip bearing pad in existing milling apparatus；6, crystal chip bearing pad；6-1, crystal chip bearing
First face of pad；The second face of 6-2, crystal chip bearing pad；7 ', the chip holding tank in existing milling apparatus；7, chip holding tank；
8, telescoping mechanism；9, connector；10, cable.
Specific embodiment
Embodiments of the present invention are described in further detail with reference to the accompanying drawings and examples.Following embodiment is used for
Illustrate the present invention, but cannot be used to limit the scope of the invention.
In the description of the present invention, unless otherwise indicated, the meaning of " plurality " is two or more.Term " on ",
The orientation or positional relationship of the instructions such as "lower", "left", "right", "inner", "outside", " front end ", " rear end ", " head ", " tail portion " is
It is based on the orientation or positional relationship shown in the drawings, is merely for convenience of description of the present invention and simplification of the description, rather than instruction or dark
Show that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as pair
Limitation of the invention.In addition, term " first ", " second ", " third " etc. are used for description purposes only, and should not be understood as instruction or
Imply relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, it can also be indirectly connected through an intermediary.For this
For the those of ordinary skill in field, the concrete meaning of above-mentioned term in the present invention can be understood depending on concrete condition.
As shown in figure 4, present embodiments providing a kind of single-sided polishing multi-wafer thickness compensation device comprising carrier 1,
Multiple chip holding tanks 7 are offered on carrier 1, are equipped with crystal chip bearing pad 6 and telescoping mechanism 8, crystal chip bearing in chip holding tank 7
First face 6-1 of pad for installing chip 2 to be ground, in crystal chip bearing pad 6 the second face 6-2 opposite with the first face 6-1 with stretch
The telescopic end of contracting mechanism 8 is connected, and can move back and forth along longitudinal direction under telescopic end drive, and then crystal chip bearing pad 6 is driven to exist
Move back and forth on longitudinal direction, be adjusted with treating the depth that grinding wafers 2 are embedded into chip holding tank 7, so make it is each to
The working face 2-1 protrusion chip holding tank 7 of grinding wafers is simultaneously generally aligned in the same plane the working face 2-1 of each chip to be ground
On；Carrier 1 is equipped with the connector 9 for carrier 1 to be connected with the grinding head of milling apparatus.Carrier 1 can be pacified by connector 9
It is attached on grinding head, drives the carrier 1 of the compensation device to be ground by grinding head.
It should be noted that since crystal chip bearing pad 6 is in cushion, two planes (the first face 6- of crystal chip bearing pad 6
The 1 and second face 6-2) it is oppositely arranged.The the first face 6-1 and the second face 6-2 of crystal chip bearing pad are horizontal plane, telescoping mechanism
Second face 6-2 of 8 telescopic end and crystal chip bearing pad is vertically arranged.First face 6-1 of crystal chip bearing pad is coated with wax layer or benefit
With the fixed chip 2 to be ground of liquid interfacial tension installation.
In the present embodiment, telescoping mechanism 8 is cylinder, and the telescopic end of telescoping mechanism is piston rod.Certainly, telescoping mechanism 8
It can be the servo motor with lead screw, lead screw is equivalent to the telescopic end of telescoping mechanism 8 at this time.In addition, this telescoping mechanism 8 can also
Think that any other is able to drive the mechanical device that crystal chip bearing pad 6 moves back and forth in the longitudinal direction.
The present embodiment additionally provides a kind of chemical-mechanical grinding device comprising milling apparatus ontology is set to milling apparatus
Grinding head and above-mentioned single-sided polishing multi-wafer thickness compensation device on ontology.Milling apparatus ontology includes abrasive disk
With lapping liquid system etc.
It should be noted that the working face 2-1 of the chip to be ground on single-sided polishing multi-wafer thickness compensation device can
With upward or downward；" work of chip to be ground is face-up " represents the top that abrasive disk 5 is located at chip 2 to be ground, " wait grind
The work for grinding chip is face-down " represent the lower section that abrasive disk 5 is located at chip 2 to be ground.Specific in the present embodiment, referring to fig. 4,
Upward, i.e. grinding pad and abrasive disk 5 (being not shown in Fig. 4) is sequentially located at chip to be ground to the working face 2-1 of chip to be ground
The top of working face 2-1.
In addition, be additionally provided on milling apparatus ontology telescoping mechanism control unit, information memory cell, data processing unit and
Grinding control unit (is not shown) in Fig. 4, specifically:
For information memory cell for storing standby message, which includes: the number number of each chip to be ground 2
According to the number data of the carrier 1 and chip holding tank 7 at, thickness data and its place；
Data processing unit and information memory cell are communicated to connect to obtain the standby message, and to each crystalline substance to be ground
The thickness data of piece 2 carries out data processing, and is embedded into correspondence needed for determining each chip to be ground 2 according to data processed result
Depth in chip holding tank 7；
Telescoping mechanism control unit is communicated to connect with data processing unit to be embedded into needed for each chip to be ground 2 with obtaining
Depth data in chip holding tank 7, and communicate to connect with telescoping mechanism 8 to be stretched according to acquired depth data control
The telescopic end of contracting mechanism 8 make it is longitudinal moves back and forth, with to each chip 2 to be ground be embedded into the depth in chip holding tank 7 into
Row adjustment；
Grinding control unit can send instruction to equipment correlation grinding component and start to grind, and according to program setting
Step and parameter are ground.Carrier 1 is connect to inform grinding when grinding preparation and completing with grinding control unit communication
Control unit.
Further, which further includes the cable 10 in connector 9, and telescoping mechanism 8 passes through
Cable 10 and telescoping mechanism control unit communicate to connect, and carrier 1 is communicated to connect by cable 10 and milling apparatus ontology.
The present embodiment additionally provides a kind of chemical and mechanical grinding method carried out based on above-mentioned chemical-mechanical grinding device,
It includes the following steps:
S1: the number of each chip to be ground 2 is obtained by code reader, and the thickness of each chip 2 to be ground is carried out
Measurement, is then uploaded to information memory cell for the number of chip 2 to be ground and thickness data；
S2: chip 2 to be ground is installed to crystal chip bearing pad 6, and carrier 1 is installed to grinding head by connector 9
On；
S3: the number of the carrier and chip holding tank 7 where each chip is recorded respectively by information memory cell；
S4: data processing unit is communicated with information memory cell to obtain number data, the thickness of each chip to be ground 2
The number data of the carrier and chip holding tank 7 at degree evidence and its place, and the thickness data for treating grinding wafers 2 carries out data
Processing, the depth being embedded into chip holding tank 7 needed for determining each chip to be ground 2 according to data processed result；It is described
Data processing is specially the height value meter for needing to protrude carrier 1 according to the thickness value and chip to be ground 2 of all chips 2 to be ground
It calculates and needs to be embedded in the depth in chip holding tank 7 per a piece of chip 2 to be ground；When calculated chip 2 to be ground is embedded in crystalline substance
When depth in piece holding tank 7 is lower than setting value 0.2mm, the chip 2 to be ground is needed replacing to avoid the chip and skids off chip
Holding tank 7；It should be noted that the setting value of the present embodiment can be set according to actual needs, such as can be in 0.1mm
And it hereinafter, can also be in 0.3mm or more；
S5: communicated to connect by telescoping mechanism control unit one end and data processing unit with determined by obtaining it is each to
The depth data being embedded into chip holding tank 7 needed for grinding wafers 2, the other end and telescoping mechanism 8 are communicated to connect according to institute
The depth data obtained is made longitudinal to move back and forth to each crystalline substance to be ground to control the telescopic end of telescoping mechanism 8
The depth that piece 2 is embedded into chip holding tank 7 is adjusted, and so that the working face 2-1 of each chip to be ground is protruded chip and is accommodated
Slot 7 simultaneously keeps the working face 2-1 of each chip to be ground on same carrier in the same plane；
S6: carrier 1 is informed that grinding control unit grinding preparation has been completed with grinding control unit communication, so
Grinding control unit issues grinding instruction afterwards, so that grinding head drives carrier 1 to carry out conventional chemical mechanical grinding；The grinding
Preparation refers to the adjustment work for being embedded into depth in chip holding tank 7 to each chip 2 to be ground；
S7: repeat the above steps S1~S6, to realize continuous production.
From the foregoing, it will be observed that the thickness compensation device of the present embodiment, by setting telescoping mechanism, telescoping mechanism drives crystal chip bearing
Pad make it is longitudinal move back and forth, and then drive chip to be ground make it is longitudinal move back and forth, to treat grinding wafers insertion
It is adjusted to the depth in chip holding tank, the working face of each chip to be ground can be made to protrude chip during adjustment and accommodated
Slot simultaneously keeps the working face of each chip to be ground in the same plane, and grinding behaviour can be completed in carrier under the drive of grinding head
Make, ensure that chip and grinding pad keep good plane contact during grinding and polishing, improve the work of chemical mechanical grinding
Skill uniformity, while optimizing the quality of wafer grinding polishing.Moreover, being provided on carrier in the thickness compensation device multiple
Chip holding tank accommodates a chip to be ground in each chip holding tank, thus can carry out the grinding and polishing of chip in batches,
To further improve production capacity.
The chemical-mechanical grinding device of the present embodiment is provided with telescoping mechanism control unit, information memory cell, at data
Unit and grinding control unit are managed, the thickness data of chip to be ground is stored using information memory cell；Utilize data processing list
The thickness data that member treats grinding wafers handle and then determined to be embedded into chip holding tank needed for each chip to be ground
Depth；It recycles telescoping mechanism control unit to receive to be embedded into chip holding tank needed for identified each chip to be ground
Depth data, and the telescopic end for controlling telescoping mechanism accordingly is made longitudinal to move back and forth to be embedded in each chip to be ground
It is automatically adjusted to the depth in chip holding tank, so that the working face of each chip to be ground be made to protrude chip holding tank simultaneously
The working face of each chip to be ground is automatically adjusted on same plane, that is, realizes all chips to be ground on same carrier
Part except protrusion chip holding tank is all identical or control is in the error range that technique allows, to realize wafer position
The automation of adjustment, and then the operation that the artificial or special equipment before CMP process carries out thickness sorting is eliminated, it greatly reduces
Workload and manpower and material resources cost, simplify processing step, improve work efficiency, and then substantially increase production capacity.
The above-mentioned chemical and mechanical grinding method of the present embodiment is to show that this method eliminates based on above-mentioned milling apparatus
Sorting work before CMP process only needs a step thickness measure, can use above-mentioned thickness compensation device to crystalline substance to be ground
The depth that piece is embedded in chip holding tank is automatically adjusted, and reaches technique requirement, and entire adjustment process realizes automation,
It eliminates unnecessary processing step and a large amount of manpower and material resources, is promoted convenient for production capacity and production cost is greatly reduced.
Existing milling apparatus in order to meet the process uniformity of different-thickness chip, need before the grinding to chip into
Row thickness sorting, this just needs special people's force-summing device to complete the task, in the case of technique requires very fine, it will
Increase very big workload, also may require that very big hall space for storing good sorting while expending a large amount of manpower and material resources
Chip, be unfavorable for production capacity promotion.And the above-mentioned chemical and mechanical grinding method of the present embodiment is based on the thickness compensation device, saves
Sorting work before CMP process only needs a step thickness measure, can use above-mentioned thickness compensation device to be ground
The depth that chip is embedded in chip holding tank is automatically adjusted, and reaches technique requirement, and entire adjustment process realizes automatically
Change, eliminate unnecessary processing step and a large amount of manpower and material resources, is promoted convenient for production capacity and production cost is greatly reduced.
Shown in sum up, the thickness compensation device of the present embodiment can protrude into carrier according to wafer thickness, adjust automatically chip
Outer portion thickness (or insertion chip holding tank in depth), so that the chip working face on same carrier is maintained at same
In plane.
The embodiment of the present invention be in order to example and description and provide, and be not exhaustively or by the present invention limit
In disclosed form.Many modifications and variations are obvious for the ordinary skill in the art.Selection and
Description embodiment is and to enable those skilled in the art to more preferably illustrate the principle of the present invention and practical application
Understand the present invention to design various embodiments suitable for specific applications with various modifications.
Claims (11)
1. a kind of single-sided polishing multi-wafer thickness compensation device, including carrier, which is characterized in that offered on the carrier more
A chip holding tank, the chip holding tank is interior to be equipped with crystal chip bearing pad and telescoping mechanism, the first face of the crystal chip bearing pad
For installing chip to be ground, the second face of the crystal chip bearing pad is connected with the telescopic end of the telescoping mechanism, and can be
The telescopic end moves back and forth along longitudinal direction under driving；The carrier is equipped with for by the grinding head phase of the carrier and milling apparatus
The connector of connection.
2. single-sided polishing according to claim 1 multi-wafer thickness compensation device, which is characterized in that the crystal chip bearing
The first face and the second face of pad are horizontal plane, the telescopic end of the telescoping mechanism and the second face of crystal chip bearing pad is vertical sets
It sets.
3. single-sided polishing according to claim 1 multi-wafer thickness compensation device, which is characterized in that the telescoping mechanism
For cylinder, the telescopic end of the telescoping mechanism is piston rod；
Or, the telescoping mechanism is the servo motor with lead screw, the telescopic end of the telescoping mechanism is the lead screw.
4. a kind of chemical-mechanical grinding device, including milling apparatus ontology, the grinding head on the milling apparatus ontology,
It is characterized in that, further includes the described in any item single-sided polishing multi-wafer thickness compensation devices of Claims 1 to 4.
5. chemical-mechanical grinding device according to claim 4, which is characterized in that single-sided polishing multi-wafer thickness
The working face of chip to be ground in degree compensation device faces upward or downward.
6. chemical-mechanical grinding device according to claim 4, which is characterized in that the milling apparatus ontology, which is equipped with, to be stretched
Contracting mechanism controls unit, information memory cell, data processing unit and the grinding control unit for issuing grinding instruction；
For the information memory cell for storing standby message, the standby message includes: the number number of each chip to be ground
According to the number data of the carrier and chip holding tank at, thickness data and its place；
The data processing unit and information memory cell are communicated to connect to obtain the standby message, and to each described wait grind
The thickness data for grinding chip carries out data processing, and is embedded into crystalline substance needed for determining each chip to be ground according to data processed result
Depth in piece holding tank；
The telescoping mechanism control unit is communicated to connect with data processing unit to be embedded into needed for each chip to be ground with obtaining
Depth data in chip holding tank, and communicate to connect with telescoping mechanism to be controlled and be stretched according to the acquired depth data
The telescopic end of mechanism is made longitudinal direction and is moved back and forth, and is adjusted with being embedded into the depth in chip holding tank to each chip to be ground
It is whole；The carrier is connect to inform grinding control unit when grinding preparation and completing with grinding control unit communication.
7. chemical-mechanical grinding device according to claim 6, which is characterized in that it further include cable, the telescoping mechanism
It is communicated to connect by the cable and telescoping mechanism control unit, the carrier passes through the cable and this body communication of milling apparatus
Connection.
8. chemical-mechanical grinding device according to claim 7, which is characterized in that the cable is set to the connector
It is interior.
9. a kind of chemical and mechanical grinding method carried out based on any one of claim 6~8 chemical-mechanical grinding device,
It is characterized by comprising the following steps:
S1: the number of each chip to be ground is obtained, and the thickness of each chip to be ground is measured, then by institute
The number and thickness data for stating chip to be ground are uploaded to the information memory cell；
S2: chip to be ground is installed to crystal chip bearing pad, and the carrier is installed to grinding head by the connector
On；
S3: the number of the carrier and chip holding tank where each chip is recorded respectively by the information memory cell；
S4: the data processing unit is communicated with information memory cell to obtain number data, the thickness of each chip to be ground
The number data of the carrier and chip holding tank at degree evidence and its place, and the thickness data of the chip to be ground is counted
According to processing, the depth being embedded into chip holding tank needed for determining each chip to be ground according to data processed result；
S5: communicated to connect by telescoping mechanism control unit one end and data processing unit with determined by obtaining it is each to
The depth data being embedded into chip holding tank needed for grinding wafers, the other end and telescoping mechanism are communicated to connect according to acquired in
The depth data, make longitudinal to move back and forth to be embedded in each chip to be ground to control the telescopic end of telescoping mechanism
It is adjusted to the depth in chip holding tank, the working face of each chip to be ground is made to protrude chip holding tank and makes same load
The working face of each chip to be ground is in the same plane on tool；
S6: the carrier is informed that the grinding control unit grinding preparation is complete with grinding control unit communication
At then the grinding control unit issues grinding instruction, grinds so that the grinding head drives the carrier to carry out chemical machinery
Mill.
10. chemical and mechanical grinding method according to claim 9, which is characterized in that in step S4, the data processing tool
Body be according to the height value that the thickness value and chip to be ground of all chips to be ground need to protrude carrier calculate per it is a piece of to
Grinding wafers need to be embedded in the depth in chip holding tank；Depth in calculated chip insertion chip holding tank to be ground
When lower than setting value, the chip to be ground is needed replacing to avoid the chip and skids off chip holding tank；
And/or in step S6, the grinding preparation, which refers to, is embedded into depth in chip holding tank to each chip to be ground
Adjust work.
11. chemical and mechanical grinding method according to claim 8, which is characterized in that be additionally provided with step after step S6
S7, the step S7 are as follows: repeat the above steps S1~S6, to realize continuous production.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711183085.1A CN109822450A (en) | 2017-11-23 | 2017-11-23 | Single-sided polishing multi-wafer thickness compensation device and milling apparatus and grinding method |
| PCT/CN2017/116142 WO2019100461A1 (en) | 2017-11-23 | 2017-12-14 | Multi-chip thickness compensation device for single-sided polishing, and grinding device, and grinding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711183085.1A CN109822450A (en) | 2017-11-23 | 2017-11-23 | Single-sided polishing multi-wafer thickness compensation device and milling apparatus and grinding method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109822450A true CN109822450A (en) | 2019-05-31 |
Family
ID=66630865
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711183085.1A Pending CN109822450A (en) | 2017-11-23 | 2017-11-23 | Single-sided polishing multi-wafer thickness compensation device and milling apparatus and grinding method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109822450A (en) |
| WO (1) | WO2019100461A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110948294A (en) * | 2019-12-27 | 2020-04-03 | 苏州凯利昂光电科技有限公司 | Polishing method for improving polishing efficiency |
| CN114473846A (en) * | 2020-11-11 | 2022-05-13 | 中国科学院微电子研究所 | Wafer grinding device |
| CN116551559A (en) * | 2023-02-28 | 2023-08-08 | 名正(浙江)电子装备有限公司 | Wafer grinding and polishing machine with pressure sensing system |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58160056A (en) * | 1982-03-17 | 1983-09-22 | Nec Corp | Polishing device |
| CN103506927B (en) * | 2013-10-28 | 2015-12-02 | 中国科学院地球化学研究所 | A kind of polishing machine material containing block |
| CN104625940A (en) * | 2013-11-12 | 2015-05-20 | 昆山科尼电子器材有限公司 | Silicon wafer grinding and optical polishing system and machining technology thereof |
| CN203817964U (en) * | 2014-05-09 | 2014-09-10 | 山东省科学院新材料研究所 | Combined sample carrying plate for wafer grinding and polishing |
-
2017
- 2017-11-23 CN CN201711183085.1A patent/CN109822450A/en active Pending
- 2017-12-14 WO PCT/CN2017/116142 patent/WO2019100461A1/en active Application Filing
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110948294A (en) * | 2019-12-27 | 2020-04-03 | 苏州凯利昂光电科技有限公司 | Polishing method for improving polishing efficiency |
| CN114473846A (en) * | 2020-11-11 | 2022-05-13 | 中国科学院微电子研究所 | Wafer grinding device |
| CN116551559A (en) * | 2023-02-28 | 2023-08-08 | 名正(浙江)电子装备有限公司 | Wafer grinding and polishing machine with pressure sensing system |
| CN116551559B (en) * | 2023-02-28 | 2023-12-12 | 名正(浙江)电子装备有限公司 | Wafer grinding and polishing machine with pressure sensing system |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019100461A1 (en) | 2019-05-31 |
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