CN109818683B - Bulk silicon MEMS waveguide combining method for terahertz frequency band space wave mixing - Google Patents
Bulk silicon MEMS waveguide combining method for terahertz frequency band space wave mixing Download PDFInfo
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Abstract
The invention relates to a bulk silicon MEMS waveguide combining method for terahertz frequency band space wave mixing, and belongs to the technical field of terahertz wave mixing receiving front ends. The method introduces a bulk silicon MEMS technology to manufacture a terahertz local oscillation signal receiving antenna, a terahertz signal receiving antenna to be detected and a waveguide duplexer. The waveguide duplexer superposes the received terahertz local oscillation signal and the electric signal of the signal to be detected, outputs waveguide through the waveguide duplexer and inputs the signal to the terahertz mixer, and simultaneously isolates the terahertz local oscillation signal receiving antenna and the terahertz signal receiving antenna to be detected. The method replaces a common light splitting film combining method with obvious loss in a terahertz space wave mixing system under the condition that the terahertz local oscillation signal and the signal to be detected are in the form of space radiation waves; the integration of system design is realized, and the receiving sensitivity of the system is improved.
Description
Technical Field
The invention relates to a bulk silicon MEMS waveguide combining method for terahertz frequency band space wave mixing, and belongs to the technical field of terahertz wave mixing receiving front ends.
Background
The terahertz frequency band is between millimeter waves and far infrared waves, and the frequency band technology is a mature technology which is not completely explored and researched between microwave electronics and optics. Terahertz waves have the characteristics of spectral resolution, safety, perspective, transient property, broadband and the like, have more and more important significance in the fields of physics, chemistry, biology, electronics, radio astronomy and the like, and derive a series of applications including biological imaging, THz spectrum rapid detection, high-speed communication, terahertz radar and the like.
The terahertz coherent detection technology is similar to the superheterodyne technology in the conventional microwave communication, wherein a mixer-related structure is a key part in the coherent detection technology. Particularly, in the application field of frequency mixing in which the local oscillator signal and the signal to be measured are spatial waves at the same time, the existing splitting film combining module feeds the signal to be measured into the receiving antenna through the transmission of the splitting film, and feeds the local oscillator signal into the receiving antenna through the reflection of the splitting film. In order to improve the receiving efficiency of the signal to be measured, the transmittance of the light splitting film must be improved, and the reflectivity must be reduced. And then the power of the input local oscillation signal is small, so that the sensitivity of a receiving system is influenced, and the detection capability of a weak signal to be detected is reduced.
The existing bulk silicon MEMS process can etch different shapes of high aspect ratio apertures on a silicon wafer with the thickness of hundreds of microns and metalize the surface of the etched silicon wafer.
Disclosure of Invention
Aiming at a terahertz frequency mixing receiving system (a terahertz local oscillation signal in a space wave radiation form and a terahertz signal to be detected in a space wave radiation form irradiate the frequency mixing receiving system from different directions), the method introduces a bulk silicon MEMS technology and an integrated combining and frequency mixing mode with higher efficiency and better performance, and improves the local oscillation utilization efficiency of terahertz frequency band signals.
A bulk silicon MEMS waveguide combining method for terahertz frequency band space wave mixing comprises the following specific steps:
Manufacturing a terahertz local oscillation signal receiving antenna by adopting a silicon chip, and superposing a plurality of silicon chips by using gold bonding and mechanical positioning and fixing technologies to form a multi-layer silicon chip structure; and each silicon chip is etched with an aperture with the same shape and different sizes, and the aperture is circular or regular polygon. The apertures of the silicon wafers are overlapped and stacked in a center alignment mode to form a cavity structure gradually expanding from the lower silicon wafer to the upper silicon wafer. The radiation main lobe direction of the terahertz local oscillation signal receiving antenna points to the normal direction of a silicon wafer plane in the multilayer silicon wafer structure. And manufacturing a rectangular aperture on the silicon wafer with the smallest aperture to be used as a rectangular waveguide tube for connecting with the waveguide duplexer, wherein the rectangular aperture is concentric with the circular or regular polygon aperture of the silicon wafer layer.
And 2, manufacturing the terahertz signal receiving antenna to be tested by adopting a bulk silicon MEMS process.
The terahertz signal receiving antenna to be detected is manufactured by adopting a silicon chip, a plurality of silicon chips are overlapped by using gold bonding and mechanical positioning and fixing technologies to form a multi-layer silicon chip structure, wherein a triangular aperture with the same shape and different sizes is etched on each silicon chip. One side of the triangular aperture of each layer of silicon wafer is superposed with the edge of the silicon wafer, the aperture of each layer of silicon wafer is aligned and superposed by the superposed side lines of the triangles and the edge of the silicon wafer, and the aperture is superposed to form a cavity structure gradually enlarged from the center to the edge of the silicon wafer. The triangular aperture in each layer of silicon chip is gradually increased from the lower layer of silicon chip to the middle layer of silicon chip, and gradually decreased from the middle layer of silicon chip to the upper layer of silicon chip, and the triangular aperture etched on the middle layer of silicon chip is etched and manufactured at the vertex position which is farthest away from the edge of the silicon chip, the rectangular waveguide tube is a cuboid cavity with a fixed cross section, and the cross section of one terminal of the cuboid is communicated with the vertex position, far away from the edge of the silicon chip, of the triangular aperture etched on the middle layer of silicon chip. The terahertz to-be-detected signal receiving antenna is perpendicular to the terahertz local oscillation signal receiving antenna in pointing direction and is parallel to the plane of the silicon wafer. In order to realize better electrical performance, the external caliber profile of the terahertz signal receiving antenna to be tested stacked at the edge of the silicon wafer is a stepped broken line by utilizing the high aspect ratio characteristic of the silicon wafer processed by the bulk silicon MEMS process, so that the amplitude and phase of an electric field at the antenna aperture surface are adjusted.
And 3, manufacturing the waveguide duplexer by adopting a bulk silicon MEMS process.
The waveguide duplexer is manufactured by adopting a silicon wafer, and a plurality of silicon wafers with the same etched rectangular patterns are overlapped by using gold bonding and mechanical positioning and fixing technologies to form a multi-layer silicon wafer overlapping structure. The waveguide duplexer comprises a first cavity filter, a second cavity filter and a waveguide duplexer output waveguide: in the laminated structure, only one corner of the upper rectangular aperture and the lower rectangular aperture of the adjacent layers are overlapped in the laminating process, and a cavity formed by laminating three or more layers of silicon wafers forms a first cavity filter; constructing a second cavity filter by the same method; the output waveguide of the waveguide duplexer is communicated by all superposed silicon wafers in a completely superposed mode to form a rectangular cavity, the longitudinal length of the rectangular cavity is random, the long side of the cross section is the long side of the waveguide, and the short side of the cross section is the short side of the waveguide. The output port of the first cavity filter, the output port of the second cavity filter and the output waveguide of the waveguide duplexer are communicated at the same node.
And 4, connecting the waveguide end of the terahertz local oscillation signal receiving antenna with the input port of the first cavity filter of the waveguide duplexer, and connecting the waveguide end of the terahertz signal receiving antenna to be tested with the input port of the second cavity filter of the waveguide duplexer. And a terahertz frequency mixer is integrated at the rear end of the waveguide duplexer.
The terahertz mixer is inserted into the waveguide broadside central point of the waveguide duplexer output waveguide at a position which is about a quarter of the working wavelength away from the waveguide duplexer output waveguide terminal in a chip form, so that the terahertz mixer is connected with the waveguide duplexer.
And 5, receiving the terahertz local oscillation signals in the form of space waves by the terahertz local oscillation signal receiving antenna. And the rectangular waveguide tube at the position with the minimum aperture of the terahertz local oscillation signal receiving antenna converts the local oscillation signal space wave into a circuit signal and transmits the circuit signal to the first cavity filter of the waveguide duplexer.
And 6, receiving the terahertz signal to be detected in the form of space waves by the terahertz signal receiving antenna to be detected. And the rectangular waveguide tube at the position of the minimum aperture of the terahertz signal receiving antenna to be detected converts the space wave of the signal to be detected into a circuit signal and transmits the circuit signal to the second cavity filter of the waveguide duplexer.
The working frequency band of the first cavity filter is the same as the frequency band of the terahertz local oscillator signal, and the working frequency band of the second cavity filter is the same as the frequency band of the terahertz signal to be detected; and the terahertz local oscillation signal and the terahertz signal to be detected complete signal superposition at the junction node of the output port of the first cavity filter, the output port of the second cavity filter and the output waveguide of the waveguide duplexer.
The terahertz local oscillator signal receiving antenna, the terahertz signal receiving antenna to be detected, the waveguide duplexer and the terahertz mixer are integrated on the same bulk silicon MEMS silicon chip lamination preparation part, mutual influence and mutual restriction exist between the terahertz local oscillator signal receiving antenna, the terahertz signal receiving antenna to be detected, the waveguide duplexer and the terahertz mixer in two aspects of electrical performance and mechanical performance, the performance of each device is closely linked with a combination process, and an optimal implementation scheme needs to be obtained through optimization and adjustment.
Advantageous effects
The method replaces a common light splitting film combining method with obvious loss in a terahertz space wave mixing system under the condition that the terahertz local oscillation signal and the signal to be detected are in the form of space radiation waves. The method comprises the steps of using a bulk silicon MEMS process integration design, overlapping silicon wafers in different etching shapes by adopting gold bonding and mechanical positioning fixing technologies, and then forming connection between the terahertz device and the device through a space structure formed by etching and overlapping the different silicon wafers. On one hand, the energy attenuation of signals and local oscillators caused by the light splitting film is reduced, the optical path is shortened, the frequency mixing efficiency of two paths of space terahertz waves is improved, and the receiving sensitivity of the system is improved; on the other hand, the light splitting film is required to be arranged outside the antenna, so that the integration of the equipment is not facilitated, the part is removed, the composition of the terahertz space wave mixing system is simplified, and the miniaturization and modularization of the terahertz space wave mixing equipment are facilitated. The method can realize integration and integration of system design, and improve the processing precision and butt joint precision of the terahertz device in the system, thereby improving the system performance. The method of the invention can be applied to low temperature superconducting applications.
Drawings
FIG. 1 is a schematic block diagram of a bulk silicon MEMS waveguide combining method for terahertz frequency band spatial wave mixing;
FIG. 2 is a block perspective view of an embodiment of the present invention;
FIG. 3 is a radiation pattern of a terahertz signal to be detected input antenna in an embodiment;
FIG. 4 is a local oscillator signal receiving antenna radiation pattern in an embodiment;
FIG. 5 is a standing wave curve diagram of the output port of the waveguide duplexer in the embodiment;
description of reference numerals:
1-terahertz signal receiving antenna to be tested;
2-terahertz local oscillation signal receiving antenna;
3-waveguide duplexers;
a 4-terahertz frequency mixer;
5-intermediate frequency output signal detection circuit;
the 6-terahertz signal receiving antenna output port to be tested is connected with the waveguide duplexer input port;
the 7-terahertz local oscillation signal receiving antenna output port is connected with the waveguide duplexer input port;
8-waveguide duplexer output port;
in fig. 1, Sig is a terahertz signal to be detected, Lo is a local oscillation signal, Sig + Lo is a mixed signal of the terahertz signal to be detected and the local oscillation signal after passing through the waveguide duplexer, Fmid is an intermediate frequency signal of the signal to be detected and the local oscillation signal after passing through the mixer, and the combiner module includes a terahertz signal receiving antenna 1 to be detected, a terahertz local oscillation signal receiving antenna 2 and a waveguide duplexer 3 in a dashed line frame.
Detailed Description
For better illustrating the objects and advantages of the present invention, the present invention will be described in further detail with reference to the accompanying drawings and examples.
Examples
The embodiment of integrating the combining method in the bulk silicon MEMS preparation part is shown in FIG. 2, which shows a combining module of a 300GHz terahertz spatial wave mixing receiving system designed based on a bulk silicon MEMS process.
The terahertz signal receiving antenna 1 to be detected and the terahertz local oscillator signal receiving antenna 2 work at the frequency of a signal to be detected and the local oscillator frequency respectively, two paths of space waves of the signal to be detected and the local oscillator signal are collected by corresponding antennas respectively and are converted into circuit energy, then the circuit energy is input into a corresponding input port of a waveguide duplexer, the circuit energy is input into an input port of a terahertz mixer after being filtered and overlapped by the waveguide duplexer, an intermediate frequency signal is generated after the frequency mixing of the terahertz mixer, and the intermediate frequency signal is input into a corresponding intermediate frequency output signal detection circuit for signal processing.
In the embodiment, all terahertz circuit devices including the terahertz local oscillation signal receiving antenna, the terahertz signal receiving antenna to be detected, the waveguide duplexer and the terahertz frequency mixer are connected by adopting a WR2.8 waveguide, the cross section of the WR2.8 waveguide is a rectangle of 0.711mm multiplied by 0.356mm, and the whole frequency mixing receiving system module works near 300 GHz. The terahertz signal receiving antenna to be detected 1 is formed by transversely superposing a plurality of layers of bulk silicon MEMS silicon wafers, the aperture longitudinal opening angle is 27 degrees, the aperture maximum linear degree is 5.6mm, the thicknesses of the bulk silicon MEMS process silicon wafers are 0.18mm and 0.22mm alternately, and the radiation direction of the terahertz signal to be detected input into the antenna is shown in figure 3; the terahertz local oscillation signal receiving antenna 2 is formed by longitudinally superposing a plurality of layers of MEMS substrates, the aperture opening angle of a horn is 70 degrees, the aperture diameter is 4.6mm, the substrate layer height is 0.18mm and 0.22mm, and the radiation direction of the local oscillation signal receiving antenna is shown in figure 4; the waveguide duplexer 3 has waveguide cavity filters with different frequencies at two input ports corresponding to the signal to be measured and the local oscillator signal, so as to ensure that signals of two branches are not interfered and the situation that energy leaks from another antenna does not occur, the energy from the local oscillator and the signal branches is converged at an output port of the waveguide duplexer and finally fed into the terahertz mixer, and fig. 5 is a standing wave parameter diagram obtained by simulating an output port of a combined signal. The parts are integrated to form a combining module of the terahertz waveband space wave waveguide combining and mixing receiving system. Fig. 3, 4, and 5 show typical performance indexes of the embodiment.
Claims (4)
1. A bulk silicon MEMS waveguide combining method for terahertz frequency band space wave mixing is characterized in that: comprises the following steps:
step 1, manufacturing a terahertz local oscillation signal receiving antenna by adopting a bulk silicon MEMS (micro-electromechanical systems) process;
manufacturing a terahertz local oscillation signal receiving antenna by adopting a silicon chip, and superposing a plurality of silicon chips by using gold bonding and mechanical positioning and fixing technologies to form a multi-layer silicon chip structure; etching an aperture with the same shape and different sizes on each silicon chip, wherein the aperture is circular or regular polygon; the aperture of the silicon chip is overlapped and stacked according to the mode of center alignment to form a cavity structure gradually expanding from the lower silicon chip to the upper silicon chip; the radiation main lobe direction of the terahertz local oscillation signal receiving antenna points to the normal direction of a silicon wafer plane in the multilayer silicon wafer structure; manufacturing a rectangular aperture on a silicon wafer with the smallest aperture as a rectangular waveguide tube for connecting with a waveguide duplexer, wherein the rectangular aperture is concentric with the circular or regular polygon aperture of the silicon wafer layer;
step 2, manufacturing a terahertz signal receiving antenna to be tested by adopting a bulk silicon MEMS process;
manufacturing a terahertz signal receiving antenna to be detected by adopting a silicon chip, and superposing a plurality of silicon chips by using gold bonding and mechanical positioning and fixing technologies to form a multi-layer silicon chip structure, wherein a triangular aperture with the same shape and different sizes is etched on each silicon chip; one side of the triangular aperture of each layer of silicon wafer is superposed with the edge of the silicon wafer, the aperture of each layer of silicon wafer is aligned and superposed by the superposed side lines of the triangles and the edge of the silicon wafer, and the aperture is superposed to form a cavity structure gradually enlarged from the center to the edge of the silicon wafer; the triangular aperture in each layer of silicon wafer is gradually increased from the lower layer of silicon wafer to the middle layer of silicon wafer, and gradually decreased from the middle layer of silicon wafer to the upper layer of silicon wafer, and a rectangular waveguide tube is etched and manufactured at the vertex position, which is farthest away from the edge of the silicon wafer, of the triangular aperture etched on the middle layer of silicon wafer, wherein the rectangular waveguide tube is a first cuboid cavity, and the cross section of one terminal of the first cuboid cavity is communicated with the vertex position, which is far away from the edge of the silicon wafer, of the triangular aperture etched on the middle layer of silicon wafer; the orientation of a terahertz signal to be detected receiving antenna is vertical to a terahertz local oscillation signal receiving antenna and is parallel to the plane of the silicon wafer;
Step 3, manufacturing the waveguide duplexer by adopting a bulk silicon MEMS process;
manufacturing a waveguide duplexer by using a silicon wafer, and superposing a plurality of silicon wafers with the same etched rectangular patterns by using gold bonding and mechanical positioning and fixing technologies to form a multi-layer silicon wafer superposed structure; the waveguide duplexer comprises a first cavity filter, a second cavity filter and a waveguide duplexer output waveguide: in the laminated structure, only one corner of the upper rectangular aperture and the lower rectangular aperture of the adjacent layers are overlapped in the laminating process, and a cavity formed by laminating three or more layers of silicon wafers forms a first cavity filter; constructing a second cavity filter by the same method; the output waveguide of the waveguide duplexer is communicated by all superposed silicon wafers in a completely superposed manner to form a second cuboid cavity, the longitudinal length of the second cuboid cavity is arbitrary, the long side of the cross section is the long side of the waveguide, and the short side of the cross section is the short side of the waveguide; the output port of the first cavity filter, the output port of the second cavity filter and the output waveguide of the waveguide duplexer are communicated at the same node;
step 4, connecting the waveguide end of the terahertz local oscillation signal receiving antenna with the input port of the first cavity filter of the waveguide duplexer, and connecting the waveguide end of the terahertz signal receiving antenna to be tested with the input port of the second cavity filter of the waveguide duplexer; a terahertz mixer is integrated at the rear end of the waveguide duplexer;
The terahertz mixer is inserted into the waveguide broadside central point of the waveguide duplexer output waveguide at a position which is about a quarter of the working wavelength away from the waveguide duplexer output waveguide terminal in a chip form, so as to realize the connection with the waveguide duplexer;
step 5, a terahertz local oscillation signal receiving antenna receives a terahertz local oscillation signal in a spatial wave form; the rectangular waveguide tube at the position of the smallest aperture of the terahertz local oscillation signal receiving antenna converts local oscillation signal space waves into circuit signals and transmits the circuit signals to the first cavity filter of the waveguide duplexer;
step 6, a terahertz signal to be detected receiving antenna receives a terahertz signal to be detected in a space wave form; the rectangular waveguide tube at the position of the smallest aperture of the terahertz signal receiving antenna to be detected converts the space wave of the signal to be detected into a circuit signal and transmits the circuit signal to the second cavity filter of the waveguide duplexer;
step 7, the waveguide duplexer superposes the received terahertz local oscillation signal and the electric signal of the signal to be detected and outputs waveguide to the terahertz mixer through the waveguide duplexer; simultaneously isolating the terahertz local oscillator signal receiving antenna and the terahertz signal receiving antenna to be detected;
and the terahertz local oscillation signal and the terahertz signal to be detected complete signal superposition at the junction node of the output port of the first cavity filter, the output port of the second cavity filter and the output waveguide of the waveguide duplexer.
2. The bulk silicon MEMS waveguide combining method for terahertz frequency band spatial wave mixing according to claim 1, wherein: by utilizing the high aspect ratio characteristic of a silicon wafer processed by a bulk silicon MEMS (micro electro mechanical system) process, the external caliber profile of the terahertz signal receiving antenna to be detected stacked at the edge of the silicon wafer becomes a stepped broken line, and further the adjustment of the amplitude and phase of the electric field of the antenna aperture surface is realized.
3. The bulk silicon MEMS waveguide combining method for terahertz frequency band spatial wave mixing according to claim 1, wherein: the working frequency band of the first cavity filter is the same as the frequency band of the terahertz local oscillator signal, and the working frequency band of the second cavity filter is the same as the frequency band of the terahertz signal to be detected.
4. The bulk silicon MEMS waveguide combining method for terahertz frequency band spatial wave mixing according to claim 1, wherein: the terahertz local oscillator signal receiving antenna, the terahertz signal receiving antenna to be detected, the waveguide duplexer and the terahertz mixer are integrated on the same bulk silicon MEMS silicon chip lamination preparation part, mutual influence and mutual restriction exist among the terahertz local oscillator signal receiving antenna, the terahertz signal receiving antenna to be detected and the waveguide duplexer in two aspects of electrical performance and mechanical performance, and performance of each device and a combination process need to be optimized and adjusted.
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| CN103219587B (en) * | 2013-04-07 | 2015-06-03 | 北京理工大学 | Terahertz front-end integrated receiving device based on bulk silicon MEMS (micro-electromechanical system) technical antenna |
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