CN109818683A - Bulk silicon MEMS waveguide path combining method for Terahertz frequency range space wave mixing - Google Patents
Bulk silicon MEMS waveguide path combining method for Terahertz frequency range space wave mixing Download PDFInfo
- Publication number
- CN109818683A CN109818683A CN201910023360.6A CN201910023360A CN109818683A CN 109818683 A CN109818683 A CN 109818683A CN 201910023360 A CN201910023360 A CN 201910023360A CN 109818683 A CN109818683 A CN 109818683A
- Authority
- CN
- China
- Prior art keywords
- terahertz
- waveguide
- silicon wafer
- receiving antenna
- local oscillation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Waveguide Aerials (AREA)
Abstract
The present invention relates to a kind of bulk silicon MEMS waveguide path combining methods for Terahertz frequency range space wave mixing, belong to THz wave mixing receiving front-end technical field.This method introduces bulk silicon MEMS technology production Terahertz local oscillation signal receiving antenna, Terahertz measured signal receiving antenna and waveguide duplexer.The electric signal of the Terahertz local oscillation signal and measured signal that receive is overlapped and passes through waveguide duplexer output waveguide input Terahertz frequency mixer by waveguide duplexer, while Terahertz local oscillation signal receiving antenna and Terahertz measured signal receiving antenna is isolated.This method is under the scene that Terahertz local oscillation signal and measured signal are space radiated wave form instead of apparent spectro-film path combining method is lost in common Terahertz space wave mixing system；Realization system design integration with it is integrated, improve system reception sensitivity.
Description
Technical field
The present invention relates to a kind of bulk silicon MEMS waveguide path combining methods for Terahertz frequency range space wave mixing, belong to terahertz
Hereby wave mixing receiving front-end technical field.
Background technique
For Terahertz frequency range between millimeter wave and far infrared wave, which is mature microwave electronics and optics
Between not yet complete exploratory development technology.THz wave has Spectral resolution, safety, perspectivity, transient state and width
There is more and more important meaning in the fields such as physics, chemistry, biology, electronics, radio astronomy by the characteristics such as band, have been derived and are included
A series of applications such as bio-imaging, THz wave spectrum quickly detect, high-speed communication, Terahertz radar.
Terahertz coherent detection technology is similar to the super-heterodyne technique in traditional microwave communication, wherein frequency mixer dependency structure
It is the key component in coherent detection technology.It is especially simultaneously that being mixed for space wave applies neck with measured signal in local oscillation signal
Domain, existing spectro-film are combined module, and measured signal passes through the transmission feed-in receiving antenna of spectro-film, and local oscillation signal passes through light splitting
The reflection feed-in receiving antenna of film.In order to promote the receiving efficiency of measured signal, it is necessary to promote the light transmittance of spectro-film, reduce anti-
Rate is penetrated, the two cannot get both.And then cause input local oscillation signal power small, and then impact to receiving system sensitivity, it drops
The detectability of humble weak measured signal.
Existing bulk silicon MEMS technique can etch high-aspect-ratio aperture of different shapes on the silicon wafer of several hundred micron thickness, and
By the silicon chip surface metallization after etching.
Summary of the invention
The method of the present invention is mixed reception system for the Terahertz of Terahertz local oscillation signal feedthrough system in the form of space wave
(the Terahertz local oscillation signal of space wave forms of radiation irradiates from different directions with the Terahertz measured signal of space wave forms of radiation
It is mixed reception system), it introduces bulk silicon MEMS technology and more efficient, performance and preferably integrates combining mixing schemes, promote terahertz
The hereby local oscillator utilization efficiency of frequency band signals.
A kind of bulk silicon MEMS waveguide path combining method for Terahertz frequency range space wave mixing, the specific steps are as follows:
Step 1. makes Terahertz local oscillation signal receiving antenna using bulk silicon MEMS technique.
It, will be multiple with golden gold bonding and machinery positioning technique for fixing using silicon wafer to manufacture Terahertz local oscillation signal receiving antenna
Silicon wafer overlaps to form Multi-layer silicon structure；The identical and of different sizes aperture of one shape of each silicon chip erosion, aperture shape
Shape is using round or regular polygon.The aperture of silicon wafer is overlapped stacking in such a way that center is aligned, and is formed upward from lower layer's silicon wafer
The cavity body structure that layer silicon wafer gradually extends.It is directed toward in Multi-layer silicon structure in Terahertz local oscillation signal receiving antenna radiation main lobe direction
The normal direction of silicon wafer plane.Rectangular aperture is made on the smallest silicon wafer in aperture and is used as rectangular waveguide, in case double with waveguide
The connection of work device, the rectangular aperture and the circle of place silicon wafer layer or regular polygon aperture are concentric.
Step 2. makes Terahertz measured signal receiving antenna using bulk silicon MEMS technique.
It, will be multiple with golden gold bonding and machinery positioning technique for fixing using silicon wafer to manufacture Terahertz measured signal receiving antenna
Silicon wafer overlaps to form Multi-layer silicon structure, wherein etching identical, the of different sizes triangle aperture of a shape on each silicon wafer.
The one side in the triangle aperture of every layer of silicon wafer is overlapped with place layer silicon chip edge, and the aperture of each layer silicon wafer is with each triangle and silicon wafer
The sideline alignment and congruence of coincident, aperture overlap the cavity body structure to be formed and be gradually expanded from silicon wafer center to edge.Each layer silicon
Triangle aperture in piece is gradually increased from lower layer's silicon wafer to middle layer silicon wafer, is gradually subtracted from middle layer silicon wafer to upper layer silicon wafer
Small, the vertex position etching at the triangle aperture etched on middle layer silicon wafer farthest away from silicon wafer edge makes rectangular waveguide,
The rectangular waveguide is the cuboid cavity with constant cross-section, the cross section of one terminal of cuboid and middle layer silicon
The triangle aperture of piece etching is connected to far from the vertex position of silicon chip edge.Terahertz measured signal receiving antenna is directed toward and terahertz
Hereby local oscillation signal receiving antenna is vertical, parallel with silicon wafer plane.To realize better electrical property, processed using bulk silicon MEMS technique
Silicon wafer high aspect ratio features, Terahertz measured signal receiving antenna becomes in the external bore profile that silicon chip edge is stacked into
Ladder-like broken line, and then realize the adjustment to Antenna aperture electric field width phase.
Step 3. makes waveguide duplexer using bulk silicon MEMS technique.
Using silicon wafer to manufacture waveguide duplexer, with golden gold bonding and machinery positioning technique for fixing by multiple etching identical rectangulars
The silicon wafer of pattern overlaps to form Multi-layer silicon iterative structure.Waveguide duplexer includes the first cavity body filter, the filtering of the second cavity
Device, waveguide duplexer output waveguide: in iterative structure, the rectangular aperture up and down of adjacent layer only has one jiao of weight in lamination process
It closes, three layers or three layers or more of silicon wafer overlaps the cavity to be formed and constitutes the first cavity body filter；Using same procedure construction second
Cavity body filter；Waveguide duplexer output waveguide is connected in a manner of being completely coincident by each overlapping silicon wafer and forms cuboid cavity,
The rectangle cavity longitudinal length is any, and cross section long side is waveguide long side, section short side is waveguide short side.The filtering of first cavity
Device delivery outlet, the second cavity body filter delivery outlet, waveguide duplexer output waveguide three are connected in same node.
First cavity body filter of the waveguide end connection waveguide duplexer of step 4. Terahertz local oscillation signal receiving antenna
Input port, the input port of the second cavity body filter of the waveguide end connection waveguide duplexer of Terahertz measured signal receiving antenna.
Terahertz frequency mixer is integrated in waveguide duplexer rear end.
Terahertz frequency mixer is with chip form apart from waveguide duplexer output waveguide terminal about a quarter operation wavelength
Position is inserted on the waveguide broadside central point of waveguide duplexer output waveguide, realizes the connection with waveguide duplexer.
The Terahertz local oscillation signal of step 5. Terahertz local oscillation signal receiving antenna reception space waveshape.Terahertz local oscillator
Rectangular waveguide at the minimum of signal receiving antenna aperture, by local oscillation signal space wave be converted into circuit signal and to waveguide duplex
The transmission of the first cavity body filter of device.
The Terahertz measured signal of step 6. Terahertz measured signal receiving antenna reception space waveshape.Terahertz is to be measured
Rectangular waveguide at the minimum of signal receiving antenna aperture, by measured signal space wave be converted into circuit signal and to waveguide duplex
The transmission of the second cavity body filter of device.
The electric signal of the Terahertz local oscillation signal and measured signal that receive is overlapped simultaneously by step 7. waveguide duplexer
Terahertz frequency mixer is inputted by waveguide duplexer output waveguide；Terahertz local oscillation signal receiving antenna and Terahertz are isolated simultaneously
Measured signal receiving antenna, prevent received measured signal enter measured signal receiving antenna after, by waveguide duplexer from
Local oscillation signal receiving antenna emits the waste for causing measured signal；Prevent received local oscillation signal from connecing into local oscillation signal simultaneously
After receiving antenna, the waste of local oscillation signal is caused from the transmitting of measured signal receiving antenna by waveguide duplexer.
First cavity body filter working frequency range is identical as Terahertz local oscillation signal frequency range, the second cavity body filter working frequency range
It is identical as the frequency range of Terahertz measured signal；Terahertz local oscillation signal and Terahertz measured signal are exported in the first cavity body filter
Mouth, the second cavity body filter delivery outlet, waveguide duplexer output waveguide converge node complete Signal averaging.
The Terahertz local oscillation signal receiving antenna, Terahertz measured signal receiving antenna, waveguide duplexer, Terahertz
Frequency mixer is integrated in same bulk silicon MEMS silicon wafer overlapping and prepares part, exists in terms of electrical property and mechanical performance two between three mutual
It mutually influences and conditions each other, each device performance is closely connected with group technology, needs to optimize and revise to obtain optimum implementation.
Beneficial effect
The method of the present invention under the scene that Terahertz local oscillation signal and measured signal are space radiated wave form instead of
Apparent spectro-film path combining method is lost in common Terahertz space wave mixing system.It is set using bulk silicon MEMS technique is integrated
The silicon wafer of different etching shape overlap by meter using golden gold bonding and machinery positioning technique for fixing, then pass through different silicon chip erosions,
The space that superposition is formed constructs the connection to be formed between THz devices and device.On the one hand reduce spectro-film bring signal with
The energy attenuation of local oscillator, shortens optical circuit path, improves the efficiency of two-way space THz wave mixing, improves system reception
Sensitivity；Another aspect spectro-film must be arranged outside antenna, be unfavorable for the integration of equipment, remove simplified partial terahertz
Hereby space wave mixing system is constituted, and helps to realize the miniaturization of Terahertz space wave frequency mixing device, modularization.Side through the invention
Method be able to achieve system design integration with it is integrated, and lifting system inside THz devices machining accuracy with dock essence
Degree, and then lifting system performance.The method of the present invention can be applied to low-temperature superconducting application.
Detailed description of the invention
Fig. 1 is a kind of functional block diagram of bulk silicon MEMS waveguide path combining method for Terahertz frequency range space wave mixing；
Fig. 2 is the module three-dimensional view of the embodiment of the present invention；
Fig. 3 is terahertz signal input radiation pattern to be measured in embodiment；
Fig. 4 is local oscillation signal receiving antenna antenna pattern in embodiment；
Fig. 5 is waveguide duplexer delivery outlet standing wave curve graph in embodiment；
Label declaration:
1- Terahertz measured signal receiving antenna；
2- Terahertz local oscillation signal receiving antenna；
3- waveguide duplexer；
4- Terahertz frequency mixer；
5- IF output signal detection circuit；
6- Terahertz measured signal receiving antenna delivery outlet and waveguide duplexer input port junction；
7- Terahertz local oscillation signal receiving antenna delivery outlet and waveguide duplexer input port junction；
8- waveguide duplexer delivery outlet；
Sig is terahertz signal to be measured in Fig. 1, and Lo is local oscillation signal, and Sig+Lo is that terahertz signal to be measured and local oscillator are believed
Number by the mixed signal after waveguide duplexer, Fmid is measured signal and local oscillation signal by the intermediate frequency letter after frequency mixer
Number, combining module includes Terahertz measured signal receiving antenna 1 in dotted line frame, Terahertz local oscillation signal receiving antenna 2 and waveguide
Duplexer 3.
Specific embodiment
Objects and advantages in order to better illustrate the present invention are with reference to the accompanying drawings and examples made the present invention further
Detailed description.
Embodiment
Path combining method Integration Data Model in the present invention is prepared into the embodiment of part as shown in Fig. 2, the figure exhibition in bulk silicon MEMS
Show that a 300GHz Terahertz space wave mixing based on bulk silicon MEMS technological design receives the combining module of system.
Terahertz measured signal receiving antenna 1 and Terahertz local oscillation signal receiving antenna 2 are worked respectively in measured signal frequency
After rate and local frequency, measured signal and local oscillation signal two-way space wave are collected respectively by respective antenna and are converted into circuit energy
Input waveguide duplexer corresponds to input port, Terahertz frequency mixer input port is inputted after waveguide duplexer filtering, superposition, in terahertz
Intermediate-freuqncy signal is generated after hereby frequency mixer mixing, corresponding IF output signal detection circuit is input to and carries out signal processing.
In this example, including Terahertz local oscillation signal receiving antenna, Terahertz measured signal receiving antenna, waveguide duplex
It is connected between all Terahertz circuit devcies including device, Terahertz frequency mixer using WR2.8 waveguide, WR2.8 waveguide cross-section is
The rectangle of 0.711mm × 0.356mm, entire mixing receive system module work near 300GHz.Terahertz letter to be measured to be measured
Laterally overlapping is formed by multilayer bulk silicon MEMS silicon wafer for number receiving antenna 1,27 ° of bore longitudinal direction subtended angle, bore maximum dimension 5.6mm,
Bulk silicon MEMS technique silicon wafer thickness is used to replace for 0.18mm with 0.22mm, terahertz signal input to be measured aerial radiation direction is such as
Shown in Fig. 3；By multilayer MEMS substrate, longitudinally overlapping is formed Terahertz local oscillation signal receiving antenna 2, and 70 ° of bell mouth diameter subtended angle, mouth
Diameter diameter 4.6mm, substrate layer a height of 0.18mm and 0.22mm are alternately present, local oscillation signal receiving antenna radiation direction such as Fig. 4 institute
Show；The wave-guide cavity wave filter that waveguide duplexer 3 has frequency different in two input ports of corresponding measured signal and local oscillation signal,
Guarantee two tributary signals will not crosstalk, be not in the situation that energy is revealed from another antenna, come from local oscillator and signal branch
Energy converge waveguide duplexer delivery outlet, final feed-in Terahertz frequency mixer, Fig. 5 is emulated from combining signal output port
The standing wave Parameter Map arrived.Above section integrates the combining for constituting terahertz wave band space sonic wave guide combining mixing reception system
Module.Fig. 3, Fig. 4, Fig. 5 show embodiment typical performance indicators.
Claims (4)
1. being used for the bulk silicon MEMS waveguide path combining method of Terahertz frequency range space wave mixing, it is characterised in that: comprise the steps of:
Step 1. makes Terahertz local oscillation signal receiving antenna using bulk silicon MEMS technique；
Using silicon wafer to manufacture Terahertz local oscillation signal receiving antenna, with golden gold bonding and machinery positioning technique for fixing by multiple silicon wafers
Overlapping forms Multi-layer silicon structure；The identical and of different sizes aperture of one shape of each silicon chip erosion, aperture shape are adopted
With round or regular polygon；The aperture of silicon wafer is overlapped stackings in such a way that center is aligned, and formation is from lower layer's silicon wafer to upper layer of silicon
The cavity body structure that piece gradually extends；It is directed toward silicon wafer in Multi-layer silicon structure in Terahertz local oscillation signal receiving antenna radiation main lobe direction
The normal direction of plane；Rectangular aperture is made on the smallest silicon wafer in aperture and is used as rectangular waveguide, is used for and waveguide duplexer
Connection, the rectangular aperture and the circle of place silicon wafer layer or regular polygon aperture are concentric；
Step 2. makes Terahertz measured signal receiving antenna using bulk silicon MEMS technique；
Using silicon wafer to manufacture Terahertz measured signal receiving antenna, with golden gold bonding and machinery positioning technique for fixing by multiple silicon wafers
Overlapping forms Multi-layer silicon structure, wherein etching identical, the of different sizes triangle aperture of a shape on each silicon wafer；Every layer
The one side in the triangle aperture of silicon wafer is overlapped with place layer silicon chip edge, and the aperture of each layer silicon wafer is with each triangle and silicon chip edge
The sideline alignment and congruence of coincidence, aperture overlap the cavity body structure to be formed and be gradually expanded from silicon wafer center to edge；In each layer silicon wafer
Triangle aperture be gradually increased from lower layer's silicon wafer to middle layer silicon wafer, be gradually reduced from middle layer silicon wafer to upper layer silicon wafer,
Vertex position etching production rectangular waveguide of the triangle aperture etched on middle layer silicon wafer farthest away from silicon wafer edge, the square
Corrugated waveguide is cuboid cavity, and the cross section of one terminal of cuboid and the triangle aperture of middle layer silicon chip erosion are separate
The vertex position of silicon chip edge is connected to；Terahertz measured signal receiving antenna is directed toward to hang down with Terahertz local oscillation signal receiving antenna
Directly, parallel with silicon wafer plane；
Step 3. makes waveguide duplexer using bulk silicon MEMS technique；
Using silicon wafer to manufacture waveguide duplexer, with golden gold bonding and machinery positioning technique for fixing by the same rectangular patterns of multiple etching phases
Silicon wafer overlap to form Multi-layer silicon iterative structure；Waveguide duplexer includes the first cavity body filter, the second cavity body filter, wave
Lead duplexer output waveguide: in iterative structure, the rectangular aperture up and down of adjacent layer only has one jiao in lamination process and is overlapped, and three
Layer or three layers or more of silicon wafer overlap the cavity to be formed and constitute the first cavity body filter；The filter of second cavity is constructed using same procedure
Wave device；Waveguide duplexer output waveguide is connected in a manner of being completely coincident by each overlapping silicon wafer and forms cuboid cavity, this is rectangular
Shape cavity longitudinal length is any, and cross section long side is waveguide long side, section short side is waveguide short side；The output of first cavity body filter
Mouth, the second cavity body filter delivery outlet, waveguide duplexer output waveguide three are connected in same node；
The input of first cavity body filter of the waveguide end connection waveguide duplexer of step 4. Terahertz local oscillation signal receiving antenna
Mouthful, the input port of the second cavity body filter of the waveguide end connection waveguide duplexer of Terahertz measured signal receiving antenna；In wave
It leads duplexer rear end and integrates Terahertz frequency mixer；
Terahertz frequency mixer is with chip form apart from waveguide duplexer output waveguide terminal about a quarter operation wavelength position
It is inserted on the waveguide broadside central point of waveguide duplexer output waveguide, realizes the connection with waveguide duplexer；
The Terahertz local oscillation signal of step 5. Terahertz local oscillation signal receiving antenna reception space waveshape；Terahertz local oscillation signal
Rectangular waveguide at the minimum of receiver aperture converts circuit signal for local oscillation signal space wave and to waveguide duplexer
The transmission of one cavity body filter；
The Terahertz measured signal of step 6. Terahertz measured signal receiving antenna reception space waveshape；Terahertz measured signal
Rectangular waveguide at the minimum of receiver aperture converts circuit signal for measured signal space wave and to waveguide duplexer
The transmission of two cavity body filters；
The electric signal of the Terahertz local oscillation signal and measured signal that receive is overlapped and is passed through by step 7. waveguide duplexer
Waveguide duplexer output waveguide inputs Terahertz frequency mixer；It is to be measured with Terahertz that Terahertz local oscillation signal receiving antenna is isolated simultaneously
Signal receiving antenna；
Terahertz local oscillation signal and Terahertz measured signal are exported in the first cavity body filter delivery outlet, the second cavity body filter
Mouthful, waveguide duplexer output waveguide converge node complete Signal averaging.
2. the bulk silicon MEMS waveguide path combining method according to claim 1 for Terahertz frequency range space wave mixing, special
Sign is: using the high aspect ratio features of the silicon wafer of bulk silicon MEMS technique processing, Terahertz measured signal receiving antenna is in silicon wafer
The external bore profile that edge is stacked into becomes ladder-like broken line, and then realizes the adjustment to Antenna aperture electric field width phase.
3. the bulk silicon MEMS waveguide path combining method according to claim 1 for Terahertz frequency range space wave mixing, special
Sign is: the first cavity body filter working frequency range is identical as Terahertz local oscillation signal frequency range, the second cavity body filter working frequency range
It is identical as the frequency range of Terahertz measured signal.
4. the bulk silicon MEMS waveguide path combining method according to claim 1 for Terahertz frequency range space wave mixing, special
Sign is: the Terahertz local oscillation signal receiving antenna, Terahertz measured signal receiving antenna, waveguide duplexer, Terahertz
Frequency mixer is integrated in same bulk silicon MEMS silicon wafer overlapping and prepares part, exists in terms of electrical property and mechanical performance two between three mutual
It mutually influences and conditions each other, each device performance is optimized and revised with group technology needs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910023360.6A CN109818683B (en) | 2019-01-10 | 2019-01-10 | Bulk silicon MEMS waveguide combining method for terahertz frequency band space wave mixing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910023360.6A CN109818683B (en) | 2019-01-10 | 2019-01-10 | Bulk silicon MEMS waveguide combining method for terahertz frequency band space wave mixing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109818683A true CN109818683A (en) | 2019-05-28 |
| CN109818683B CN109818683B (en) | 2022-07-29 |
Family
ID=66604054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910023360.6A Active CN109818683B (en) | 2019-01-10 | 2019-01-10 | Bulk silicon MEMS waveguide combining method for terahertz frequency band space wave mixing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109818683B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116859136A (en) * | 2023-09-04 | 2023-10-10 | 中国科学技术大学 | Single-side input type Redburg atomic terahertz mixer and detection system |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102128841A (en) * | 2010-01-13 | 2011-07-20 | 东南大学 | Detecting device of terahertz imaging system |
| CN103219587A (en) * | 2013-04-07 | 2013-07-24 | 北京理工大学 | Terahertz front-end integrated receiving device based on bulk silicon MEMS (micro-electromechanical system) technical antenna |
| US20130229210A1 (en) * | 2011-08-25 | 2013-09-05 | California Institute Of Technology | On-chip power-combining for high-power schottky diode based frequency multipliers |
| CN103531910A (en) * | 2013-10-16 | 2014-01-22 | 北京理工大学 | Terahertz circularly-polarized double-layer 90-degree corrugated horn antenna and preparation method thereof under bulk silicon MEMS (micro-electromechanical system) process |
| CN103531909A (en) * | 2013-10-16 | 2014-01-22 | 北京理工大学 | Terahertz frequency-scanning H-plane sectoral horn antenna and preparation method thereof under bulk silicon MEMS (micro-electromechanical system) process |
| CN104143580A (en) * | 2014-08-08 | 2014-11-12 | 电子科技大学 | Terahertz wave detector and manufacturing method thereof |
| US20140361854A1 (en) * | 2013-06-10 | 2014-12-11 | Qualcomm Mems Technologies, Inc. | Compact 3-d coplanar transmission lines |
| CN105591180A (en) * | 2016-01-29 | 2016-05-18 | 北京理工大学 | Millimeter-wave terahertz-wave waveguide diplexer |
| CN107276540A (en) * | 2017-08-10 | 2017-10-20 | 四川久成泰安科技有限公司 | A kind of Terahertz image frequency suppresses mixting circuit |
| CN107611541A (en) * | 2017-08-28 | 2018-01-19 | 北京理工大学 | Terahertz waveguide duplexer based on bulk silicon MEMS technique and preparation method thereof |
| WO2018090434A1 (en) * | 2016-11-16 | 2018-05-24 | 中国电子科技集团公司第四十一研究所 | Broadband high-efficiency local oscillator-integrated t-shaped terahertz mixer |
-
2019
- 2019-01-10 CN CN201910023360.6A patent/CN109818683B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102128841A (en) * | 2010-01-13 | 2011-07-20 | 东南大学 | Detecting device of terahertz imaging system |
| US20130229210A1 (en) * | 2011-08-25 | 2013-09-05 | California Institute Of Technology | On-chip power-combining for high-power schottky diode based frequency multipliers |
| CN103219587A (en) * | 2013-04-07 | 2013-07-24 | 北京理工大学 | Terahertz front-end integrated receiving device based on bulk silicon MEMS (micro-electromechanical system) technical antenna |
| US20140361854A1 (en) * | 2013-06-10 | 2014-12-11 | Qualcomm Mems Technologies, Inc. | Compact 3-d coplanar transmission lines |
| CN103531910A (en) * | 2013-10-16 | 2014-01-22 | 北京理工大学 | Terahertz circularly-polarized double-layer 90-degree corrugated horn antenna and preparation method thereof under bulk silicon MEMS (micro-electromechanical system) process |
| CN103531909A (en) * | 2013-10-16 | 2014-01-22 | 北京理工大学 | Terahertz frequency-scanning H-plane sectoral horn antenna and preparation method thereof under bulk silicon MEMS (micro-electromechanical system) process |
| CN104143580A (en) * | 2014-08-08 | 2014-11-12 | 电子科技大学 | Terahertz wave detector and manufacturing method thereof |
| CN105591180A (en) * | 2016-01-29 | 2016-05-18 | 北京理工大学 | Millimeter-wave terahertz-wave waveguide diplexer |
| WO2018090434A1 (en) * | 2016-11-16 | 2018-05-24 | 中国电子科技集团公司第四十一研究所 | Broadband high-efficiency local oscillator-integrated t-shaped terahertz mixer |
| CN107276540A (en) * | 2017-08-10 | 2017-10-20 | 四川久成泰安科技有限公司 | A kind of Terahertz image frequency suppresses mixting circuit |
| CN107611541A (en) * | 2017-08-28 | 2018-01-19 | 北京理工大学 | Terahertz waveguide duplexer based on bulk silicon MEMS technique and preparation method thereof |
Non-Patent Citations (4)
| Title |
|---|
| VLADIMIR ERMOLOV,ETAL.: "Micromachining integration platform for sub-terahertz and terahertz systems", 《INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES》 * |
| ZIHAO LI,ETAL.: "Design of A Terahertz Circularly Polarized Quasidiagonal Horn Antenna Based on MEMS Technology", 《2017 INTERNATIONAL APPLIED COMPUTATIONAL ELECTROMAGNETICS SOCIETY SYMPOSIUM (ACES)》 * |
| 李建华等: "基于MEMS技术的新型太赫兹混频器设计与制作", 《传感技术学报》 * |
| 马毅超等: "0.38 THz混频器关键器件设计和仿真优化", 《强激光与粒子束》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116859136A (en) * | 2023-09-04 | 2023-10-10 | 中国科学技术大学 | Single-side input type Redburg atomic terahertz mixer and detection system |
| CN116859136B (en) * | 2023-09-04 | 2024-01-05 | 中国科学技术大学 | Single-side input type Redburg atomic terahertz mixer and detection system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109818683B (en) | 2022-07-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Song | Packages for terahertz electronics | |
| He et al. | An overview of terahertz antennas | |
| US9172132B2 (en) | Integrated antenna for RFIC package applications | |
| Luo et al. | Filtenna consisting of horn antenna and substrate integrated waveguide cavity FSS | |
| Liu et al. | Advanced millimeter-wave technologies: antennas, packaging and circuits | |
| US10693209B2 (en) | Waveguide-to-microstrip transition with through holes formed through a waveguide channel area in a dielectric board | |
| US9088058B2 (en) | Waveguide interface with a launch transducer and a circular interface plate | |
| Alonso-del Pino et al. | Micromachining for advanced terahertz: Interconnects and packaging techniques at terahertz frequencies | |
| Tajima et al. | Design and analysis of LTCC-integrated planar microstrip-to-waveguide transition at 300 GHz | |
| US8773318B2 (en) | System of multi-beam antennas | |
| CN107144847A (en) | A kind of lidar transmit-receive system | |
| CN114709579B (en) | Waveguide package of on-chip integrated terahertz function chip | |
| CN109818683A (en) | Bulk silicon MEMS waveguide path combining method for Terahertz frequency range space wave mixing | |
| Yu et al. | High-integration and low-cost transmitter packaging solution for 0.2 THz SiP application using HTCC technology | |
| US8686813B2 (en) | Monolithically integrated active electronic circuit and waveguide structure for terahertz frequencies | |
| Gu et al. | Low-cost wideband low-THz antennas for wireless communications and sensing | |
| Bowers et al. | A compact optically driven travelling-wave radiating source | |
| Beer et al. | A 122 GHz Microstrip Slot Antenna with via-fence resonator in LTCC technology | |
| Desmaris et al. | Terahertz components packaging using integrated waveguide technology | |
| Gu et al. | Wideband low-THz antennas for high-speed wireless communications | |
| US10326423B1 (en) | Impedance matching circuits for photonic devices | |
| Ragan et al. | Novel on-chip antenna structures and frequency selective surface (FSS) approaches for millimeter wave devices | |
| Khani et al. | InP-based grounded coplanar waveguide to WR3 transition for monolithic integration with THz photodiodes | |
| Lancaster et al. | GaAs Schottky components for 300 GHz communication systems using a resonator impedance matching approach | |
| Lu et al. | Experimental Realization of Silicon Micromachined Terahertz Diplexer-Antenna Module for Heterodyne Receiver |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |