CN109817755B - Photodiode - Google Patents
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- CN109817755B CN109817755B CN201910066828.XA CN201910066828A CN109817755B CN 109817755 B CN109817755 B CN 109817755B CN 201910066828 A CN201910066828 A CN 201910066828A CN 109817755 B CN109817755 B CN 109817755B
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Abstract
The application provides a photodiode, the photodiode includes a substrate, a window layer formed on the substrate, a first conductive layer with a first conductive type formed on the window layer, an absorption layer formed on the first conductive layer, a composition gradient layer with a first conductive type formed on the absorption layer, a multiplication layer formed on the composition gradient layer, and a second conductive layer with a second conductive type formed on the multiplication layer. The growth direction of the substrate is [0001], the forbidden bandwidth of the component gradual change layer is gradually reduced along the direction from bottom to top, and the forbidden bandwidth of the multiplication layer is larger than the minimum value of the forbidden bandwidth of the component gradual change layer.
Description
Technical Field
The present application relates to the field of semiconductor technology, and more particularly, to a photodiode.
Background
The ultraviolet detection technology is an important technology in the field of photoelectric detection, and has important application prospects in the fields of high-voltage transmission line detection, weather early warning, fire early warning and the like. The avalanche photodiode prepared from GaN, AlN and ternary compounds formed by Al, Ga and N has high sensitivity and stability during ultraviolet detection, and is widely applied.
However, avalanche photodiodes made of GaN, AlN, and ternary compounds made of Al, Ga, and N have problems of high avalanche voltage and large avalanche noise.
Disclosure of Invention
An embodiment of the present application provides a photodiode, the photodiode includes:
a substrate, wherein the growth direction of the substrate is a [0001] direction;
a window layer formed on the substrate;
a first conductive layer having a first conductivity type formed on the window layer;
an absorption layer formed on the first conductive layer;
the component gradual change layer is formed on the absorption layer and has a first conductive type, and the forbidden bandwidth of the component gradual change layer is gradually reduced along the direction from bottom to top;
a multiplication layer formed on the component gradual change layer, wherein the forbidden bandwidth of the multiplication layer is larger than the minimum value of the forbidden bandwidth of the component gradual change layer;
a second conductive layer having a second conductivity type formed on the multiplication layer.
In one embodiment, the maximum value of the forbidden band width of the composition-graded layer is greater than the forbidden band width of the absorption layer.
In one embodiment, the window layer, the first conductive layer, the absorption layer, the composition gradient layer, the multiplication layer, and the second conductive layer are made of a ternary compound or a binary compound formed from Al, Ga, and N, respectively.
In one embodiment, the composition-graded layer is made of AlyGa1-yN，0<y<And 1, in the component gradual change layer, the value of y is gradually reduced along the direction from bottom to top.
In one embodiment, the material of the absorption layer is AlbGa1-bN, wherein b ═ ymax-z, and b ═ ymin+z，0<z<0.1。
In one embodiment, the multiplication layer is made of AlbGa1-bN, wherein b ═ ymax-z, and b ═ ymin+z，0<z<0.1。
In one embodiment, the first conductive layer includes a first sub-conductive layer having a first conductive type and a second sub-conductive layer having the first conductive type formed on the first sub-conductive layer, and the first sub-conductive layer is made of AlaGa1-aN, wherein b<a<1；
The second sub-conductive layer is made of AlxGa1-xN, in the second sub-conducting layer, the value of x is gradually reduced along the direction from bottom to top, and xmax＝a，xmin＝b；
The thickness of the second sub-conductive layer is 40nm-60nm, and the electron concentration is 1 × 1018cm-3～5×1018cm-3。
In one embodiment, the compositionally graded layer has a thickness of 50nm to 70nm and an electron doping concentration of 1 × 1018cm-3～5×1018cm-3。
In one embodiment, the photodiode further comprises a buffer layer formed between the substrate and the window layer, the buffer layer is made of AlN, and the thickness of the buffer layer is 0.1-2 μm.
In one embodiment, the first conductivity type is n-type and the second conductivity type is p-type.
The embodiment of the application achieves the main technical effects that:
according to the photodiode provided by the embodiment of the application, the forbidden bandwidth of the component gradient layer between the absorption layer and the multiplication layer is gradually reduced along the direction from bottom to top, and the forbidden bandwidth of the multiplication layer is larger than the minimum value of the forbidden bandwidth of the component gradient layer, so that positive charges can be accumulated at the interface of the component gradient layer and the multiplication layer, the direction of the polarization electric field of the multiplication layer is from bottom to top, the direction of the electric field of the external reverse bias of the photodiode is from bottom to top, namely the direction of the polarization electric field of the multiplication layer is consistent with the direction of the electric field of the external reverse bias, the external reverse bias when the photodiode is subjected to avalanche can be reduced, and the risk of early breakdown caused by high external reverse bias at the lattice defect of the photodiode can be reduced; and because the forbidden bandwidth of the component gradual change layer is gradually reduced along the direction from bottom to top, the energy of the holes is increased in the process of transporting the holes to the second conducting layer in the component gradual change layer, and the energy of the electrons is reduced in the process of transporting the electrons to the first conducting layer in the component gradual change layer, so that the effects of enhancing hole transportation and inhibiting electron transportation can be achieved, and the avalanche noise of the photodiode can be reduced.
Drawings
Fig. 1 is a schematic structural diagram of a photodiode according to an exemplary embodiment of the present application;
fig. 2 is a schematic diagram of the energy band structures of the absorption layer, the composition gradient layer, and the multiplication layer of the photodiode shown in fig. 1.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
It is to be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope of the present application. The word "if" as used herein may be interpreted as "at … …" or "when … …" or "in response to a determination", depending on the context.
Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The embodiments described below and the features of the embodiments can be combined with each other without conflict.
In the embodiments of the present application, for convenience of description, the up-down direction is determined by defining the direction from the substrate to the window layer as up and the direction from the window layer to the substrate as down. It is easy to understand that the different direction definitions do not affect the actual operation of the process and the actual shape of the product.
Fig. 1 is a schematic structural diagram of a photodiode according to an embodiment of the present disclosure, and fig. 2 is a schematic structural diagram of an absorption layer, a composition gradient layer, and a multiplication layer of the photodiode shown in fig. 1.
As shown in fig. 1, a photodiode 100 provided in the embodiment of the present application includes:
a substrate 10, wherein the growth direction of the substrate 10 is a [0001] direction;
a window layer 20 formed on the substrate 10;
a first conductive layer 30 having a first conductive type formed on the window layer 20;
an absorption layer 40 formed on the first conductive layer 30;
a composition gradient layer 50 having a first conductivity type formed on the absorption layer 40, wherein a forbidden bandwidth of the composition gradient layer 50 is gradually reduced along a direction from bottom to top;
a multiplication layer 60 formed on the composition-graded layer 50, the multiplication layer 60 having a forbidden band width larger than a minimum value of the forbidden band width of the composition-graded layer 50;
a second conductive layer 70 having a second conductive type formed on the multiplication layer 60;
a first electrode 80 formed on the first conductive layer 30 and located on the peripheral side of the absorption layer 40;
and a second electrode 90 formed on the second conductive layer 70.
In the energy band structure diagram shown in fig. 2, the energy range between the conduction band and the valence band is a forbidden band. As can be seen from fig. 2, the energy gap width of the composition-graded layer 50 between the absorption layer 40 and the multiplication layer 60 is gradually decreased in the direction from bottom to top, and the energy gap width d1 of the multiplication layer 60 is greater than the minimum energy gap width d2 of the composition-graded layer 50.
In the photodiode 100 provided in the embodiment of the present application, the forbidden bandwidth of the composition gradient layer 50 located between the absorption layer 40 and the multiplication layer 60 is gradually decreased along the direction from bottom to top, and the forbidden bandwidth of the multiplication layer 60 is larger than the minimum value of the forbidden bandwidth of the component gradual change layer 50, as can be known from the theory of piezoelectric polarization and spontaneous polarization, positive charges are accumulated at the interface of the component gradual change layer 50 and the multiplication layer 60, so that the polarization electric field direction of the multiplication layer 60 is from bottom to top, the direction of the electric field of the photodiode 100 applied with the reverse bias is from bottom to top, that is, the direction of the polarization electric field of the multiplication layer 60 is the same as the direction of the electric field of the applied reverse bias, so that the applied reverse bias when the photodiode 100 is subjected to avalanche can be reduced, thereby reducing the risk of premature breakdown at the lattice defect of the photodiode 100 due to a higher applied reverse bias voltage; and since the forbidden bandwidth of the composition-graded layer 50 is gradually decreased along the direction from bottom to top, the energy of the holes is increased in the process of transporting the holes to the second conductive layer 70 in the composition-graded layer 50, and the energy of the electrons is decreased in the process of transporting the electrons to the first conductive layer 30 in the composition-graded layer 50, so that the effects of enhancing the hole transport and suppressing the electron transport can be achieved, thereby reducing the avalanche noise of the photodiode 100.
In one embodiment, the first conductivity type may be n-type and the second conductivity type may be p-type, that is, the first conductive layer 30 is an n-type conductive layer, the composition graded layer 50 is an n-type composition graded layer, and the second conductive layer 70 is a p-type conductive layer. The window layer 20, the absorption layer 40 and the multiplication layer 60 may be formed of an unintentionally doped material.
The photodiode 100 provided in the embodiment of the present application may be an avalanche photodiode for detecting ultraviolet light. The first electrode 80 of the photodiode 100 is connected to the positive pole of the applied voltage, and the second electrode 90 is connected to the negative pole of the applied voltage. When ultraviolet light is incident from the substrate 10 of the photodiode 100, the light is absorbed in the absorption layer 40 and photogenerated carriers (electrons and holes) are generated, and the electrons and holes are transported to the multiplication layer 60 under the action of an external reverse bias. The electrons and holes moving in the multiplication layer 60 acquire energy under the action of an applied voltage and continuously collide with crystal atoms, when the energy of the electrons and holes is large enough, new electrons and holes can be generated through collision, the newly generated electrons and holes also move in the opposite direction, energy is acquired again, and the electrons and holes can be generated again through collision. When the applied reverse bias voltage is increased to a certain value, a large number of electrons and holes can be instantaneously generated, and this phenomenon is called avalanche multiplication effect.
In one embodiment, the maximum value of the energy gap width of the composition-graded layer 50 is greater than the energy gap width of the absorption layer 40. Referring again to fig. 2, the maximum value d3 of the forbidden band width of the composition-graded layer 50 is greater than the forbidden band width d4 of the absorption layer 40. Since the composition gradient layer 50 is n-type, the absorption layer 40 is formed of an unintentionally doped material, and it can be known from the theory of piezoelectric polarization and spontaneous polarization that positive charges are accumulated at the interface between the composition gradient layer 50 and the absorption layer 40, so that the direction of the polarization electric field of the absorption layer 40 is from top to bottom, and the direction of the electric field of the applied reverse bias is from bottom to top, that is, the direction of the polarization electric field of the absorption layer 40 is opposite to the direction of the electric field of the applied reverse bias, so that the electric field strength of the absorption layer 40 can be reduced, and the risk of premature breakdown at the lattice defect of the absorption layer 40 due to the higher applied reverse bias is reduced.
In one embodiment, the material of the window layer 20, the first conductive layer 30, the absorption layer 40, the composition gradient layer 50, and the multiplication layer 60 is a ternary compound or a binary compound formed by Al, Ga, and N, respectively. The ternary compound or binary compound formed by Al, Ga and N is a direct band gap semiconductor material, the light absorption coefficient is large, and the ternary compound or binary compound formed by Al, Ga and N can realize the detection of ultraviolet light with the wavelength of 200nm-365nm by adjusting the content of Al. Therefore, when the material of the window layer 20, the first conductive layer 30, the absorption layer 40, the composition gradient layer 50, and the multiplication layer 60 of the photodiode 100 is a ternary compound or a binary compound formed of Al, Ga, and N, the photodiode 100 can detect ultraviolet light.
In one embodiment, the composition-graded layer 50 may be made of AlyGa1-yN, the value of y may gradually decrease in the bottom-to-top direction. The larger the value of y, the larger AlyGa1-yThe higher the Al content in N, the higher the Al contentyGa1-yThe larger the forbidden band width of N is, the smaller the value of y decreases from the bottom to the top, the smaller the forbidden band width of the composition gradient layer 50 decreases from the bottom to the top. Further, in the direction from bottom to top, AlyGa1-yThe Al content in N may vary linearly.
In one embodiment, the window layer 20, the first conductive layer 30, the absorption layer 40, the composition gradient layer 50, the multiplication layer 60, and the second conductive layer 70 can all be formed using a Metal-organic Chemical Vapor Deposition (MOCVD) process.
During the growth of the composition-graded layer 50, the formed Al can be continuously changed by controlling at least one of the temperature, the reaction pressure, and the reactant flow rate of the MOCVD processyGa1-yLinear adjustment of Al content in N.
The thickness of the composition-graded layer 50 may be 50nm to 70nm, for example, 50nm, 55nm, 60nm, 70nm, etc. The electron doping concentration of the composition-graded layer 50 may be 1 × 1018cm-3～5×1018cm-3. Preferably, the electron doping concentration of the composition-graded layer 50 is the same everywhere, and may be, for example, 2 × 1018cm-3、3×1018cm-3、4×1018cm-3And the like.
In one embodiment, the thickness of the multiplication layer 60 may be 160nm to 200nm, such as 170nm, 180nm, 190nm, 200nm, and the like. In this range, the multiplication layer 60 can make electrons and holes efficiently avalanche-multiplied.
In one embodiment, the material of the absorption layer 40 may be AlbGa1-bN, wherein b ═ ymax-z, and b ═ ymin+z，0<z<0.1。AlbGa1-bThe higher the Al content in N, the larger the forbidden band width of the absorption layer 40. Since b is ymaxZ, the content of Al in the absorption layer 40 is smaller than the maximum value of the content of Al in the composition-graded layer 50, so that the energy gap of the absorption layer 40 can be made smaller than the maximum value of the energy gap of the composition-graded layer 50. Wherein, the value range of b can be 0.38-0.42, for example, b can be 0.38, 0.39, 0.40, 0.41, 0.42, etc. In other embodiments, the value range of b is not limited to 0.38-0.42.
Further, the thickness of the absorption layer 40 may be 160nm to 200nm, and may be, for example, 170nm, 180nm, 190nm, 200nm, or the like. In this range, the absorption layer 40 can effectively absorb incident ultraviolet light. In one embodiment, the material of the multiplication layer 60 may be AlbGa1-bN, the Al content in the multiplication layer 60 is the same as the Al content in the absorption layer 40. Since b is ymin+ z, the Al content in the multiplication layer 60 is greater than the minimum Al content in the composition-graded layer 50, thus making it possible to makeThe energy gap of the multiplication layer 60 is larger than the minimum value of the energy gap of the composition-graded layer 50.
In one embodiment, the first conductive layer 30 may include a first sub-conductive layer 31 and a second sub-conductive layer 32 formed on the first sub-conductive layer 31, and the first sub-conductive layer 31 may be made of AlaGa1-aN, wherein b<a<1. Wherein, a can be 0.5-0.7, for example, a can be 0.5, 0.55, 0.60, 0.65, 0.70, etc. In other embodiments, a is not limited to 0.5-0.7.
The thickness of the first sub-conductive layer 31 may be 0.2 μm to 0.4 μm, and may be, for example, 0.2 μm, 0.25 μm, 0.3 μm, 0.35 μm, 0.4 μm, or the like. The electron concentration of the first sub-conductive layer 31 may be 1 × 1018cm-3～5×1018cm-3. Preferably, the electron concentration of the first sub-conductive layer 31 is the same everywhere, and may be, for example, 2 × 1018cm-3、3×1018cm-3、4×1018cm-3And the like.
The second sub-conductive layer 32 may be made of AlxGa1-xN, in the second sub-conducting layer, the value of x can be gradually reduced along the direction from bottom to top, and xmax＝a，xmin＝b。
Due to xmax＝a，xminThe maximum value of the Al content in the second sub-conductive layer 32 is the same as the Al content in the first sub-conductive layer 31, and the minimum value of the Al content in the second sub-conductive layer 32 is the same as the Al content in the absorption layer 40. And along the direction from bottom to top, the value of x gradually decreases, it is known that the content of Al in the material of the second sub-conductive layer 32 adjacent to the first sub-conductive layer 31 is the same as the content of Al in the first sub-conductive layer 31, and the content of Al in the material of the second sub-conductive layer 32 adjacent to the absorption layer 40 is the same as the content of Al in the absorption layer 40, so that the lattice mismatch between the second sub-conductive layer 32 and the first sub-conductive layer 31 and the lattice mismatch between the second sub-conductive layer 32 and the absorption layer 40 can be alleviated.
Further, in the second sub-conductive layer 32, along a direction from bottom to top, the material Al of the second sub-conductive layer 32xGa1-xThe Al content in N may vary linearly.
Further, the thickness of the second sub-conductive layer 32 may be 40nm to 60nm, for example, 40nm, 45nm, 50nm, 55nm, 60nm, and the like. The electron concentration of the second sub-conductive layer 32 may be 1 × 1018cm-3～5×1018cm-3. Preferably, the electron concentration of the second sub-conductive layer 32 is the same everywhere, and may be, for example, 2 × 1018cm-3、3×1018cm-3、4×1018cm-3And the like.
Further, the electron concentration of the first sub-conductive layer 31 is the same as that of the second sub-conductive layer 32, for example, 2 × 10 electron concentration respectively18cm-3、3×1018cm-3、4×1018cm-3And the like.
The second sub-conductive layer 32 may be formed using an MOCVD process. Specifically, during the growth process of the second sub-conductive layer 32, the formed Al can be continuously changed by controlling at least one of the temperature, the reaction pressure and the reactant flow rate of the MOCVD processxGa1-xLinear adjustment of Al content in N.
In the first embodiment, the second conductive layer 70 may include a third sub-conductive layer 71 and a fourth sub-conductive layer 72 on the third sub-conductive layer 71. Wherein, the material of the third sub-conductive layer 71 may be AlbGa1-bN, that is, the content of Al in the third sub-conductive layer 71 is the same as the content of Al in the multiplication layer 60. The fourth sub-conductive layer 72 may be made of GaN.
Further, the hole concentration of the third sub-conductive layer 71 may be 0.1 × 1018cm-3～5×1018cm-3. Preferably, the electron concentration of the third sub-conductive layer 71 is the same everywhere, and may be, for example, 0.2 × 1018cm-3、0.5×1018cm-3、1×1018cm-3、2×1018cm-3、3×1018cm-3And the like. The thickness of the third sub-conductive layer 71 may be in a range of 90nm to 110nm, for example, 90nm, 100nm, 110nm, etc.
Hole concentration of the fourth sub-conductive layer 72Can be 1 × 1018cm-3～5×1019cm-3For example, it may be 2 × 1018cm-3、3×1018cm-3、4×1018cm-3、2×1019cm-3、3×1019cm-3、4×1019cm-3、5×1019cm-3And the like. The thickness of the fourth sub-conductive layer 72 may be 40nm to 60nm, for example, 40nm, 45nm, 50nm, 60nm, and the like.
In one embodiment, the material of the substrate 10 may be sapphire, AlN, SiC, etc., and the forbidden bandwidth of the substrate 10 is required to allow the incident and passing of the ultraviolet light, which is generally greater than 3.40 ev. The growth direction of the substrate 10 is the [0001] direction.
In one embodiment, the photodiode 100 may also include a buffer layer 91 formed between the substrate 10 and the window layer 20. The buffer layer 91 can relieve lattice mismatch and thermal expansion coefficient mismatch between the substrate 10 and the window layer 20, and improve the crystal quality of the materials of the substrate 10 and the window layer 20.
The buffer layer 91 may be made of AlN and may be made of an unintentionally doped material. The buffer layer 91 may have a thickness of 0.1 μm to 2 μm, for example, 0.1 μm, 0.5 μm, 1.0 μm, 1.5 μm, 2.0 μm, or the like.
In one embodiment, the material of the window layer 20 may be AlaGa1-aN, wherein b<a<1. The thickness of the window layer 20 may be 0.1 μm to 1 μm, and may be, for example, 0.1 μm, 0.4 μm, 0.8 μm, 1 μm, or the like. The window layer 20 may delay the lattice mismatch between the buffer layer 91 and the first electrode layer 30, thereby improving the crystalline quality of the material.
In the embodiment of the present invention, when the photodiode 100 is manufactured, the substrate 10, the buffer layer 91, the window layer 20, the first sub-conductive layer 31, the second sub-conductive layer 32, the absorption layer 40, the composition gradient layer 50, the multiplication layer 60, the third sub-conductive layer 71, and the fourth sub-conductive layer 72 are formed in sequence, and the sizes of the layers are the same. Then, the edge regions of the absorption layer 40, the composition gradient layer 50, the multiplication layer 60, the third sub-conductive layer 71 and the fourth sub-conductive layer 72 are etched away to expose the edge region of the second sub-conductive layer 32, so that the first electrode 80 can be formed on the edge region of the second sub-conductive layer 32. Wherein the first electrode 80 may be a ring electrode surrounding the absorption layer 40.
In one embodiment, the material of the first electrode 80 may include at least one of Ni and Au. Preferably, the material of the first electrode 80 includes Ni and Au. In forming the first electrode 80, a metal sputtering process may be used to form the first electrode 80 over the second sub-conductive layer 32.
The material of the second electrode 90 may include at least one of Ni, Au, Al, and Ti. Preferably, the material of the second electrode 90 includes Ni, Au, Al, and Ti. In forming the second electrode 90, a metal sputtering process may be used to form the second electrode 90 over the fourth sub-conductive layer 72.
It is noted that in the drawings, the sizes of layers and regions may be exaggerated for clarity of illustration. Also, it will be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or layer or intervening layers may also be present. In addition, it will be understood that when an element or layer is referred to as being "under" another element or layer, it can be directly under the other element or intervening layers or elements may also be present. In addition, it will also be understood that when a layer or element is referred to as being "between" two layers or elements, it can be the only layer between the two layers or elements, or more than one intermediate layer or element may also be present. Like reference numerals refer to like elements throughout.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (10)
1. A photodiode, comprising:
a substrate, wherein the growth direction of the substrate is a [0001] direction;
a window layer formed on the substrate;
a first conductive layer having a first conductivity type formed on the window layer;
an absorption layer formed on the first conductive layer;
the component gradual change layer is formed on the absorption layer and has a first conductive type, and the forbidden bandwidth of the component gradual change layer is gradually reduced along the direction from bottom to top;
a multiplication layer formed on the component gradual change layer, wherein the forbidden bandwidth of the multiplication layer is larger than the minimum value of the forbidden bandwidth of the component gradual change layer; the component gradient layer and the multiplication layer are respectively made of ternary compounds or binary compounds formed by Al, Ga and N;
a second conductive layer having a second conductivity type formed on the multiplication layer.
2. The photodiode of claim 1, wherein the maximum value of the energy gap width of the composition-graded layer is greater than the energy gap width of the absorption layer.
3. The photodiode according to claim 1, wherein the window layer, the first conductive layer, the absorption layer, and the second conductive layer are made of a ternary compound or a binary compound of Al, Ga, and N, respectively.
4. The photodiode of claim 3, wherein the composition-graded layer is made of AlyGa1-yN，0<y<1, in the component gradient layer, from bottom to topIn the direction, the value of y gradually decreases.
5. The photodiode of claim 4, wherein the absorption layer is made of AlbGa1-bN, wherein b ═ ymax-z, and b ═ ymin+z，0<z<0.1。
6. The photodiode of claim 4, wherein the multiplication layer is made of AlbGa1-bN, wherein b ═ ymax-z, and b ═ ymin+z，0<z<0.1。
7. The photodiode according to claim 5, wherein the first conductive layer comprises a first sub-conductive layer having the first conductivity type and a second sub-conductive layer having the first conductivity type formed on the first sub-conductive layer, and the first sub-conductive layer is made of AlaGa1-aN, wherein b<a<1；
The second sub-conductive layer is made of AlxGa1-xN, in the second sub-conducting layer, the value of x is gradually reduced along the direction from bottom to top, and xmax＝a，xmin＝b；
The thickness of the second sub-conductive layer is 40nm-60nm, and the electron concentration is 1 × 1018cm-3～5×1018cm-3。
8. The photodiode of claim 1, wherein the composition graded layer has a thickness of 50nm to 70nm and an electron doping concentration of 1 x 1018cm-3～5×1018cm-3。
9. The photodiode of claim 1, further comprising a buffer layer formed between the substrate and the window layer, wherein the buffer layer is made of AlN, and the thickness of the buffer layer is 0.1 μm to 2 μm.
10. The photodiode of claim 1, wherein the first conductivity type is n-type and the second conductivity type is p-type.
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