CN109817704A - A kind of thin film transistor and its manufacturing method, flexible base board and display device - Google Patents
A kind of thin film transistor and its manufacturing method, flexible base board and display device Download PDFInfo
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- CN109817704A CN109817704A CN201910121231.0A CN201910121231A CN109817704A CN 109817704 A CN109817704 A CN 109817704A CN 201910121231 A CN201910121231 A CN 201910121231A CN 109817704 A CN109817704 A CN 109817704A
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Abstract
The invention discloses a kind of thin film transistor and its manufacturing method, flexible base board and display device, the thin film transistor (TFT) includes active layer；Grid；Source-drain electrode；And the through-hole of the electrical connection active layer and source-drain electrode, the grid include the first organic material；And/or the through-hole includes the second organic material.Embodiment provided by the invention can meet with stresses in the process of bending by using grid and through-hole including organic material, avoid the thin film transistor (TFT) caused risk of breakage in the process of bending, effectively improve the performance of thin film transistor (TFT).
Description
Technical field
The present invention relates to field of display technology, more particularly to a kind of thin film transistor and its manufacturing method, flexible base board
And display device.
Background technique
With the development that display device is maked rapid progress, flexible display apparatus is that increasingly people is of interest, in the prior art
Thin-film transistor array base-plate, the hair that flexible display panels generally include flexible base board and are arranged on flexible base board surface
Optical element and the driving circuit for driving thin film transistor (TFT), the driving thin film transistor (TFT) includes metal electrode and metal routing.
When existing flexible display panels are bent, the metal electrode and metal routing can also be sent out on flexible base board surface therewith
Raw bending, generates stress defect, and phenomenon of rupture occurs for the metal electrode and metal routing when serious, to influence film crystal
The normal work of pipe and display device.
Summary of the invention
At least one to solve the above-mentioned problems, first aspect present invention provides a kind of thin film transistor (TFT), including
Active layer；
Grid；
Source-drain electrode；And
It is electrically connected the through-hole of the active layer and source-drain electrode；
The grid includes the first organic material；And/or
The through-hole includes the second organic material.
Further, the grid includes
First grid metal layer；
The first groove being formed in the first grid metal layer, it is recessed that first organic material is formed in described first
In slot.
Further, the grid further includes
Second grid metal layer is formed on the first grid metal layer, covers first organic material.
Further, the through-hole includes
First Source and drain metal level；
The second groove being formed in first Source and drain metal level, it is recessed that second organic material is formed in described second
In slot.
Further, the through-hole further includes
Second Source and drain metal level is formed in first Source and drain metal level, covers second organic material.
Further, first organic material and/or the second organic material are organic resin.
Second aspect of the present invention provides a kind of flexible base board, including thin film transistor (TFT) described in first aspect.
Third aspect present invention provides a kind of display device, including flexible base board described in second aspect.
Further, the display device is liquid crystal display device or electroluminescent diode display device.
Fourth aspect present invention provides a kind of production method of thin film transistor (TFT), including
Form the through-hole and source-drain electrode of active layer, grid, the electrical connection active layer and source-drain electrode, wherein the grid
Pole is formed as comprising the first organic material；And/or the through-hole is formed as comprising the second organic material.
Beneficial effects of the present invention are as follows:
The present invention formulates a kind of thin film transistor and its manufacturing method, flexible base board and aobvious for existing problem at present
Showing device, and by using grid and through-hole including organic material, it can meet with stresses, avoid described thin in the process of bending
Film transistor in the process of bending caused by risk of breakage, effectively improve the performance of thin film transistor (TFT).
Detailed description of the invention
Specific embodiments of the present invention will be described in further detail with reference to the accompanying drawing.
Fig. 1 shows structural schematic diagram of the thin film transistor (TFT) in bending in the prior art；
Fig. 2 shows the structural schematic diagrams of thin film transistor (TFT) described in one embodiment of the present of invention；
Fig. 3 shows the structural schematic diagram of grid described in one embodiment of the present of invention；
Fig. 4 shows the structural schematic diagram of grid described in another embodiment of the invention；
Fig. 5 shows the structural schematic diagram of through-hole described in one embodiment of the present of invention；
Fig. 6 shows the structural schematic diagram of through-hole described in another embodiment of the invention；
Fig. 7-13 shows the corresponding sectional view of each stage in production method described in one embodiment of the present of invention.
10-- substrate 11-- active layer 12-- gate insulating layer 13-- grid 14-- interlayer insulating film
15-- source electrode 16-- drain electrode
121-- the first gate insulation layer the second gate insulation layer of 122--
131-- first grid metal layer 132-- second grid metal layer
21-- the first organic material the second organic material of 22--
31-- first through hole the second through-hole of 32--
311, the first Source and drain metal level of 321-- 312, the second Source and drain metal level of 322--
Specific embodiment
In order to illustrate more clearly of the present invention, the present invention is done further below with reference to preferred embodiments and drawings
It is bright.Similar component is indicated in attached drawing with identical appended drawing reference.It will be appreciated by those skilled in the art that institute is specific below
The content of description is illustrative and be not restrictive, and should not be limited the scope of the invention with this.
In the prior art, as shown in Figure 1, when flexible display apparatus is bent, due to metal electrode and metal routing
Elasticity modulus it is smaller, be easy grid 13, source electrode 15 and drain 16 metal routing stress concentrate place crack, from
And influence the normal work of thin film transistor (TFT).
To solve the above problems, as shown in Fig. 2, An embodiment provides a kind of thin film transistor (TFT)s, including
Active layer 11；Grid 13；Source-drain electrode 15 and 16；And the through-hole 31,32 of the electrical connection active layer 11 and source-drain electrode 15,16；
The grid 13 includes the first organic material 21；And/or the through-hole 31,32 includes the second organic material 22.
In a specific example, as shown in figure 3, the grid includes first grid metal layer 131；It is formed in described
The first groove in first grid metal layer 131, first organic material 21 are formed in first groove.
In a specific example, active layer 11 is formed on substrate 10, forms the first gate insulation layer on active layer 11
121, first grid metal layer 131 is formed on the first gate insulation layer 121, constitutes top gate structure.However, those skilled in the art
It is understood that bottom grating structure can also be made.Still by taking the top gate structure of Fig. 3 as an example, is formed in first grid metal layer 131
One groove, such as pass through etching technics.The first organic material 21 is formed in first groove later.In the first gate insulation layer
121, the second gate insulation layer 122 is formed on first grid metal layer 131 and the first organic material 21, covers the first organic material
21.In the present embodiment, since the elasticity modulus of the first organic material 21 is greater than the elasticity modulus of gate metal, work as film crystal
When managing in the process of bending by stress, the first organic material can be avoided the grid of the thin film transistor (TFT) in the process of bending
Caused risk of breakage effectively improves the performance of thin film transistor (TFT).It should be noted that first groove can be perforation the
The groove of one gate metal layer 131, first organic material 21 are directly contacted with the first gate insulation layer 121；Or figure
Show groove, first organic material 21 is not direct to be contacted with the first gate insulation layer 121.In addition, the shape of groove is also unrestricted
System, for example, arc section or rectangular section.Those skilled in the art should be designed according to practical application scene, to realize
Grid including the first organic material is design criteria, and details are not described herein.
There is more preferably property than directly contact organic material in view of the second gate insulation layer 122 directly contacts metal material
Can, such as compare and be less prone to crackle with the second directly contact organic material of gate insulation layer 122.In a preferred embodiment
In, as shown in figure 4, the grid 13 further includes second grid metal layer 132, it is formed on the first grid metal layer 131,
Cover first organic material 21.The i.e. described grid 13 passes through first grid metal layer 131 and second grid metal layer 132 will
First organic material 21 is coated in grid 13, can not only improve the contact performance of thin film transistor (TFT), moreover it is possible to ensure grid 13
Tensile strength.
According to the tensile strength of material principle relevant to cross-sectional area, the grid 13 of the first organic material 21 will be coated with
Cross-sectional area be equal to original thin film transistor (TFT) grid cross-sectional area, when by identical lateral tensile force, this reality
The tensile strength for applying the grid 13 in example is identical as original thin film transistor (TFT).And since the present invention is aobvious for bent flexibility
Showing device, the flexible display apparatus are primarily subjected to the power perpendicular to axis direction；It is coated with the grid of the first organic material 21
13 internal layer is set as the big organic material of elasticity modulus, and when by active force perpendicular to axis, internal co-acting force is small, because
This is not easy to be destroyed by the internal stress of oneself, so shear strength is bigger, less easy fracture.
For the electric conductivity for ensuring grid 13 in thin film transistor (TFT), further, wherein the first grid metal layer 131
It is greater than with the thickness of second grid metal layer 132And the resistance due to the metallic conductor of grid 13 and conductor length,
Cross-sectional area of conductor is related with material category, and the resistivity of identical material is identical, therefore the grid 13 is able to maintain original film crystalline substance
The working performance of the grid of body pipe.
Similar, as shown in figure 5, the through-hole for connecting source-drain electrode and active layer in the thin film transistor (TFT) includes the first source
Leak metal layer 311 and 321；The second groove being formed in first Source and drain metal level 311,321, second organic material
22 are formed in second groove.The groove can be illustrating grooves, or the groove for penetrating through the through-hole reveals
The active layer of lower section out.
In the embodiment shown in fig. 5, the second organic material 22 filled in a groove is flushed with groove surfaces, this will
So that forming ohm with the metal 311/321 in through-hole forming source-drain electrode (such as shown in appended drawing reference 15/16 in Fig. 2)
Some is to form to contact with the second organic material 22 when contact, this will increase ohmic contact resistance.For this purpose, excellent at one
In the embodiment of choosing, as shown in fig. 6, the through-hole further includes the second Source and drain metal level 312 and 322, it is formed in first source
It leaks on metal layer 311 and 321, covers second organic material 22.That is the first Source and drain metal level 311 and the second Source and drain metal level
312 are coated on the second organic material 22 in first through hole 31, first Source and drain metal level 321 and the second Source and drain metal level
322 are coated on the second organic material 22 in second through-hole 32, so that source-drain electrode and the second Source and drain metal level 312 and 322
It completely attaches to.
The first organic material can be added in the gate only to increase stretch-proof, buckle resistance energy in the thin film transistor (TFT),
Similarly the second organic material only can also be added to increase stretch-proof, buckle resistance in the through-hole of connection source-drain electrode and active layer
Energy；Or the first organic material is not only added in the gate, but also the second organic material is added in the through hole with more fully hereinafter
Increase stretch-proof, the buckle resistance energy of the thin film transistor (TFT).
Further, the grid of the thin film transistor (TFT) and through-hole are metal material, are Mo, Al, MO, Ti, Al and Ti
One of, first organic material and the second organic material can be identical or different organic resin.It is making simultaneously
During thin film transistor (TFT), the metal part of the grid and through-hole is arrived the target as sputter of different materials using sputtering technology
It is formed on substrate, therefore the same of tensile strength is being improved using the grid of metal part cladding organic material and the structure of through-hole
When, there is same architectural characteristic with original thin film transistor (TFT).
Another embodiment of the present invention provides a kind of production methods of thin film transistor (TFT), including form active layer, grid
Pole, the through-hole and source-drain electrode for being electrically connected the active layer and source-drain electrode, wherein the grid is formed as comprising first organic material
Material；And/or the through-hole is formed as comprising the second organic material.
In a specific example, the production method includes:
As shown in fig. 7, sequentially forming active layer 11, the first gate insulation layer 12 and first grid metal layer on substrate 10
131。
As shown in figure 8, patterning forms the first groove on the first grid metal layer 131, first groove can
Think hemisphere or cuboid.
As shown in figure 9, fill the first organic material 21 into first groove, and by 21 quarter of the first organic material
Erosion is first shape, and the first shape can be sphere or cuboid.It should be noted that the present embodiment is with first grid gold
Category layer 131 and second grid metal layer 132 are illustrated for coating the first organic material 21, and those skilled in the art should root
According to the making step of practical situations design grid, details are not described herein.
As shown in Figure 10, second grid metal is formed on the first grid metal layer 131 and the first organic material 21
Layer 132 forms the grid with first grid metal layer 131 and second grid metal layer 132 for the first organic material of external sheath 21
Pole 13.
As shown in figure 11, the second gate insulation layer is formed on first gate insulation layer 121 and second grid metal layer 132
122, interlayer insulating film 14 is formed on second gate insulation layer 122；
As shown in figure 12, the interlayer insulating film 14 patterning is formed to be penetrated through respectively to the first of the active layer 11 and is opened
Hole and the second aperture fill the first Source and drain metal level 311 to form first through hole 31, described second in first aperture
The first Source and drain metal level 321 of filling is in aperture 32 to form the second through-hole 32；To the figure of the first Source and drain metal level 311 and 321
Caseization forms the second groove, fills the second organic material into the second groove of first Source and drain metal level 311 and 321 respectively
22, wherein the material of the two can be different.Then the second source and drain is formed in first Source and drain metal level 311 and 321 respectively
Metal layer 312 and 322, second Source and drain metal level 312 and 322 cover second organic material 22.
As shown in figure 13, it is formed on the interlayer insulating film 14 respectively and covers the first through hole 31 and the second through-hole 32
Source electrode 15 and drain electrode 16, so far, thin film transistor (TFT) production finishes.
The thin film transistor (TFT) of the above embodiment of the present invention is suitable for there may be the flexible base board of bending demand, is this this hair
Bright one embodiment provides a kind of flexible base board, including above-mentioned thin film transistor (TFT).It, can using the flexible base board as substrate
To continue to prepare the other component of display device.
Therefore, another embodiment of the present invention provides a kind of display device, including above-mentioned flexible base board, and it is described
Display device is liquid crystal display device or electroluminescent diode display device.The display device can be mobile phone, plate electricity
Any products or components having a display function such as brain, television set, display, laptop, Digital Frame or navigator.
The present invention formulates a kind of thin film transistor and its manufacturing method, flexible base board and aobvious for existing problem at present
Showing device, and by using grid and through-hole including organic material, it can meet with stresses, avoid described thin in the process of bending
Film transistor in the process of bending caused by risk of breakage to compensate for problem in the prior art effectively improve film crystal
The performance of pipe.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention may be used also on the basis of the above description for those of ordinary skill in the art
To make other variations or changes in different ways, all embodiments can not be exhaustive here, it is all to belong to this hair
The obvious changes or variations that bright technical solution is extended out are still in the scope of protection of the present invention.
Claims (10)
1. a kind of thin film transistor (TFT), including
Active layer；
Grid；
Source-drain electrode；And
It is electrically connected the through-hole of the active layer and source-drain electrode；
It is characterized in that,
The grid includes the first organic material；And/or
The through-hole includes the second organic material.
2. thin film transistor (TFT) according to claim 1, which is characterized in that
The grid includes
First grid metal layer；
The first groove being formed in the first grid metal layer, first organic material are formed in first groove
In.
3. thin film transistor (TFT) according to claim 2, which is characterized in that the grid further includes
Second grid metal layer is formed on the first grid metal layer, covers first organic material.
4. thin film transistor (TFT) according to claim 1, which is characterized in that
The through-hole includes
First Source and drain metal level；
The second groove being formed in first Source and drain metal level, second organic material are formed in second groove
In.
5. thin film transistor (TFT) according to claim 4, which is characterized in that the through-hole further includes
Second Source and drain metal level is formed in first Source and drain metal level, covers second organic material.
6. thin film transistor (TFT) according to any one of claims 1-5, which is characterized in that first organic material and/
Or second organic material be organic resin.
7. a kind of flexible base board, which is characterized in that including thin film transistor (TFT) according to claim 1 to 6.
8. a kind of display device, which is characterized in that including flexible base board as claimed in claim 7.
9. display device according to claim 8, which is characterized in that the display device is liquid crystal display device or electroluminescent
Light emitting display device.
10. a kind of production method of thin film transistor (TFT), which is characterized in that including
Form the through-hole and source-drain electrode of active layer, grid, the electrical connection active layer and source-drain electrode, wherein the grid shape
As including the first organic material；And/or the through-hole is formed as comprising the second organic material.
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| CN201910121231.0A CN109817704B (en) | 2019-02-19 | 2019-02-19 | Thin film transistor and manufacturing method thereof, flexible substrate and display device |
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| CN109817704B CN109817704B (en) | 2023-03-28 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110190085A (en) * | 2019-06-05 | 2019-08-30 | 京东方科技集团股份有限公司 | Light emitting diode drives backboard and preparation method thereof, display device |
| WO2021027066A1 (en) * | 2019-08-13 | 2021-02-18 | 武汉华星光电半导体显示技术有限公司 | Display panel |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102629579A (en) * | 2011-09-29 | 2012-08-08 | 京东方科技集团股份有限公司 | Flexible TFT array substrate and manufacturing method thereof and display device |
| CN105552084A (en) * | 2015-12-14 | 2016-05-04 | 昆山工研院新型平板显示技术中心有限公司 | Thin film transistor and preparation method thereof, array substrate and display device |
| CN108122927A (en) * | 2016-11-29 | 2018-06-05 | 昆山工研院新型平板显示技术中心有限公司 | Thin film transistor (TFT) and its manufacturing method, display panel and display device |
| CN108257971A (en) * | 2016-12-27 | 2018-07-06 | 昆山工研院新型平板显示技术中心有限公司 | Flexible display apparatus and its manufacturing method |
-
2019
- 2019-02-19 CN CN201910121231.0A patent/CN109817704B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102629579A (en) * | 2011-09-29 | 2012-08-08 | 京东方科技集团股份有限公司 | Flexible TFT array substrate and manufacturing method thereof and display device |
| CN105552084A (en) * | 2015-12-14 | 2016-05-04 | 昆山工研院新型平板显示技术中心有限公司 | Thin film transistor and preparation method thereof, array substrate and display device |
| CN108122927A (en) * | 2016-11-29 | 2018-06-05 | 昆山工研院新型平板显示技术中心有限公司 | Thin film transistor (TFT) and its manufacturing method, display panel and display device |
| CN108257971A (en) * | 2016-12-27 | 2018-07-06 | 昆山工研院新型平板显示技术中心有限公司 | Flexible display apparatus and its manufacturing method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110190085A (en) * | 2019-06-05 | 2019-08-30 | 京东方科技集团股份有限公司 | Light emitting diode drives backboard and preparation method thereof, display device |
| CN110190085B (en) * | 2019-06-05 | 2021-03-23 | 京东方科技集团股份有限公司 | Light emitting diode driving back plate, preparation method thereof and display device |
| US11398438B2 (en) | 2019-06-05 | 2022-07-26 | Boe Technology Group Co., Ltd. | Drive backplane for light-emitting diode, method for preparing same, and display device |
| WO2021027066A1 (en) * | 2019-08-13 | 2021-02-18 | 武汉华星光电半导体显示技术有限公司 | Display panel |
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| CN109817704B (en) | 2023-03-28 |
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