CN109817161A - Electro-optical device and electronic equipment - Google Patents

Electro-optical device and electronic equipment Download PDF

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Publication number
CN109817161A
CN109817161A CN201811374567.XA CN201811374567A CN109817161A CN 109817161 A CN109817161 A CN 109817161A CN 201811374567 A CN201811374567 A CN 201811374567A CN 109817161 A CN109817161 A CN 109817161A
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transistor
current potential
light
line
signal
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CN201811374567.XA
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CN109817161B (en
Inventor
宫坂光敏
百濑洋一
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Seiko Epson Corp
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Seiko Epson Corp
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2007—Display of intermediate tones
    • G09G3/2018—Display of intermediate tones by time modulation using two or more time intervals
    • G09G3/2022—Display of intermediate tones by time modulation using two or more time intervals using sub-frames
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3266—Details of drivers for scan electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3275—Details of drivers for data electrodes
    • G09G3/3291—Details of drivers for data electrodes in which the data driver supplies a variable data voltage for setting the current through, or the voltage across, the light-emitting elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0857—Static memory circuit, e.g. flip-flop

Abstract

Electro-optical device and electronic equipment.Electro-optical device (10) includes scan line (42)；Signal wire (43)；Pixel circuit (41) is arranged in correspondence with the infall of scan line (42) and signal wire (43)；1st high potential line (47), is supplied to the 1st current potential；Low potential line (46), is supplied to the 2nd current potential；2nd high potential line (49) is supplied to the 3rd current potential, and pixel circuit (41) includes: light-emitting component (20)；Storage circuit (60) configures between the 1st high potential line (47) and low potential line (46)；1st transistor (31), grid are electrically connected with storage circuit (60)；2nd transistor (32), its grid is electrically connected with scan line (42), 2nd transistor (32) configures between storage circuit (60) and signal wire (43), potential difference potential difference less than 3rd current potential relative to 2nd current potential of the 1st current potential relative to the 2nd current potential.

Description

Electro-optical device and electronic equipment
Technical field
The present invention relates to electro-optical device and electronic equipments.
Background technique
In recent years, as the electronic equipment for being capable of forming and observing the virtual image, it has been suggested that by the image light from electro-optical device Guide the head-mounted display (HMD) of the type to the pupil of observer.In this electronic equipment, as electro-optical device, such as The organic el device with organic EL (Electro Luminescence) element as light-emitting component is used.It is being used for head It wears in the organic el device of display, it is desirable that high resolution (miniaturization of pixel), more gray processings of display, low power consumption.
In previous organic el device, when the scanning signal by being supplied to scan line makes selection transistor become conducting When state, the current potential based on the picture signal supplied from signal wire is protected by the capacity cell connecting with the grid of driving transistor It holds.When driving transistor is to drive the grid potential of transistor and become on state according to the current potential kept by capacity cell When, flowed through in organic EL element with the electric current of the corresponding amount of the driving grid potential of transistor, organic EL element according to its The corresponding Intensity LEDs of the magnitude of current.
In this way, in previous organic el device, using controlled according to the grid potential of driving transistor flow through it is organic The analog-driven of the electric current of EL element shows that accordingly, there exist following projects to carry out gray scale: the voltage and current because driving transistor Characteristic or the deviation of threshold voltage and cause between pixel generate brightness deviation or gray scale offset, thus make show quality Decline.In this regard, proposing the organic el device (for example, referring to patent document 1) with compensation circuit, compensation circuit compensation is driven The voltage-current characteristic of dynamic transistor or the deviation of threshold voltage.
Patent document 1: Japanese Unexamined Patent Publication 2004-062199 bulletin
But when compensation circuit is arranged as described in Patent Document 1, electric current is also flowed through in compensation circuit, Therefore, it will lead to power consumption increase.In addition, in order to make to show more gray processings, needing to increase storage figure in previous analog-driven As the capacitance of the capacity cell of signal, therefore, it is difficult to realize high resolution (miniaturization of pixel) simultaneously, and power consumption Increase with the charge and discharge of capacity cell.In other words, in previous technology, exist and be difficult to realize and can be shown with low-power consumption The project of the electro-optical device of the high quality graphic of high-resolution and more gray scales.
Summary of the invention
The present invention is at least part in order to solve the above problems and completes, and can be used as mode below or application Example is realized.
The electro-optical device of (application examples 1) the application example is characterized in that the electro-optical device includes scan line；Signal wire；Picture Plain circuit is arranged in correspondence with the infall of the scan line and the signal wire；1st equipotential line is supplied to the 1st electricity Position；2nd equipotential line is supplied to the 2nd current potential；And the 3rd equipotential line, it is supplied to the 3rd current potential, the pixel circuit includes: Light-emitting component；Storage circuit configures between the 1st equipotential line and the 2nd equipotential line；1st transistor, grid with The storage circuit electrical connection；And the 2nd transistor, grid are electrically connected with the scan line, the 2nd transistor configuration exists Between the storage circuit and the signal wire, the light-emitting component and the 1st transistor are configured in series in the 2nd electricity Between bit line and the 3rd equipotential line, the 1st current potential is less than described relative to the current potential absolute value of the difference of the 2nd current potential Current potential absolute value of the difference of 3rd current potential relative to the 2nd current potential.
According to the structure of the application example, pixel circuit includes storage electricity of the configuration between the 1st equipotential line and the 2nd equipotential line Road, the 2nd transistor are configured between storage circuit and signal wire, are configured in series between the 2nd equipotential line and the 3rd equipotential line The grid of 1st transistor and light-emitting component, the 1st transistor is electrically connected with storage circuit, the grid of the 2nd transistor and scanning Line electrical connection.Therefore, the digital signal write storage circuit that can will be showed with the two-value of conduction and cut-off via the 2nd transistor, It is controlled via luminous and non-luminescent ratio of the 1st transistor to light-emitting component and carries out gray scale and show.As a result, due to not The influence of the deviation of voltage-current characteristic or threshold voltage vulnerable to each transistor, so, even if also can without compensation circuit Enough reduce the offset of the deviation or gray scale of the brightness between pixel.In addition, in digital drive, by opening image in display one Field in increase as the quantity to shine with the subfield of the non-luminescent unit controlled to light-emitting component, even if without capacitor Element also can easily improve grey.In addition, due to the biggish capacity cell of need not have capacitor, it is able to carry out The miniaturization of pixel.High resolution is realized thereby, it is possible to be miniaturize to pixel, and can reduce and capacity cell The associated power consumption of charge and discharge.
Also, the 1st current potential relative to the 2nd current potential for being supplied to storage circuit current potential absolute value of the difference less than the 3rd current potential Current potential absolute value of the difference relative to the 2nd current potential for being supplied to light-emitting component and the 1st transistor.That is, utilizing the 1st current potential and the 2nd The low-voltage system power supply of current potential acts storage circuit, and the high-voltage system power supply using the 3rd current potential and the 2nd current potential makes Light-emitting component shines.Therefore, storage circuit can be miniaturize and realizes high speed motion, further, it is possible to improve the member that shines The light emission luminance of part.Thereby, it is possible to make the write-in of picture signal, rewrite high speed, also, keep display more bright.Its result It is the electro-optical device that may be implemented to show the image of bright, high-resolution and the high quality of more gray scales with low power.
The electro-optical device of (application examples 2) the application example is preferably, the storage circuit include the 3rd transistor, the described 3rd The grid length of transistor is shorter than the grid length of the 1st transistor.
According to the structure of the application example, the grid length ratio and light-emitting component string of the 3rd transistor for including in storage circuit Connection ground configuration the 1st transistor grid length it is short, therefore, though the 3rd transistor less than the 1st transistor, also can be to storage Circuit is miniaturize.Therefore, storage circuit can be made to carry out high speed motion, and send out light-emitting component with higher voltage Light.
The electro-optical device of (application examples 3) the application example is preferably, the area of the channel formation region of the 3rd transistor Area than the channel formation region of the 1st transistor is small.
According to the structure of the application example, the transistor capacitance for the 3rd transistor for including in storage circuit is less than the 1st transistor Transistor capacitance, therefore, can make the write-in to the picture signal of storage circuit, rewrite high speed.
The electro-optical device of (application examples 4) the application example is preferably, the source electrode and the 2nd current potential of the 1st transistor Line electrical connection, the light-emitting component configuration is between the drain electrode and the 3rd equipotential line of the 1st transistor.
According to the structure of the application example, the source potential of the 1st transistor is fixed as the 2nd current potential, therefore, in the 1st transistor When as on state, even if the absolute value of the source drain voltage of the 1st transistor is smaller, it is also capable of increasing the 1st transistor Electric conductivity.That is, the 1st transistor substantial linear can be made when the 1st transistor becomes on state to make light-emitting component shine Ground is acted (hreinafter referred to as line movement).Electricity as the 2nd current potential and the 3rd current potential of high-voltage system power supply as a result, The major part of potential difference is applied to light-emitting component, so, when making light-emitting component shine, it is not easily susceptible to the threshold value electricity of the 1st transistor The influence of the deviation of pressure.As a result, it is possible to improve the uniformity of the brightness between pixel.
The electro-optical device of (application examples 5) the application example is preferably, and the conducting resistance of the 1st transistor is lower than the hair The conducting resistance of optical element.
According to the structure of the application example, light-emitting component can be made to make the 1st when shining making the 1st transistor on state Transistor carries out line movement.As a result, the major part of the potential difference generated in light-emitting component and the 1st transistor is applied to hair Optical element, so, when making light-emitting component shine, it is not easily susceptible to the influence of the deviation of the threshold voltage of the 1st transistor.As a result, The offset of the deviation, gray scale of the brightness between pixel can be reduced.
The electro-optical device of (application examples 6) the application example is preferably, the pole of the 1st transistor and the 2nd transistor Property is identical.
According to the structure of the application example, for example, the feelings when the 1st transistor is the signal of N-type, "high" as on state Under condition, the 2nd transistor also N-type, "high" signal when become on state.The grid from scan line to the 2nd transistor can be set The current potential of the selection signal of pole supply is the 1st current potential, highest 3rd current potential, non-select signal are in the 2nd current potential and the 3rd current potential Therefore the potential setting of selection signal can must be compared image by the 2nd minimum current potential in the 1st current potential, the 2nd current potential and the 3rd current potential The current potential (the 1st current potential or the 2nd current potential) of signal is high.Therefore, it is written to storage circuit making the 2nd transistor on state When picture signal, the gate-source voltage of the 2nd transistor can be made to increase the high amount of selection signal, therefore, even if source potential Due to picture signal write-in and rise (even if the 1st current potential of supply hot side is as picture signal), also can be brilliant by the 2nd The conducting resistance of body pipe maintains lower.
Equally, the 1st transistor be p-type, " low " signal when become on state in the case where, the 2nd transistor is also in P Type, " low " signal when become on state.The electricity of the selection signal supplied from scan line to the grid of the 2nd transistor can be set Position is the 3rd current potential minimum in the 1st current potential, the 2nd current potential and the 3rd current potential, non-select signal is the 1st current potential, the 2nd current potential and the 3rd Highest 2nd current potential in current potential, therefore, can by the potential setting of selection signal be than picture signal current potential (the 1st current potential or The 2nd current potential of person) it is low.Therefore, make the 2nd transistor on state when picture signal is written to storage circuit, the 2nd can be made The gate-source voltage of transistor increases the low amount of selection signal, therefore, even if source potential due to picture signal write-in and Decline (even if the 1st current potential of supply low potential side is as picture signal), can also maintain the conducting resistance of the 2nd transistor It is lower.Thereby, it is possible to carry out the write-in to the picture signal of storage circuit at a high speed and reliably, rewrite.
The electro-optical device of (application examples 7) the application example is preferably, which has control line, the pixel circuit Comprising the 4th transistor, the grid of the 4th transistor is electrically connected with the control line, the light-emitting component, the 1st transistor, 4th transistor is configured in series between the 2nd equipotential line and the 3rd equipotential line.
According to the structure of the application example, can be independently controlled by control line and the 2nd transistor with light-emitting component and 4th transistor of the 1st transistor arranged in series.That is, independently controlling makes the 2nd transistor on state and writes to storage circuit During entering picture signal and makes the 4th transistor on state and make light-emitting component as can be during luminance.Therefore, In each pixel, light-emitting component non-luminescent state can be made during by picture signal write storage circuit, in storage electricity It is written with after picture signal in road, if light-emitting component is made to become the state that can be shone during the defined time is display, because This, can be driven by the time-division and realize accurate expressing gradation.
The electro-optical device of (application examples 8) the application example is preferably, the drain electrode of the 4th transistor and the light-emitting component Electrical connection.
According to the structure of the application example, the drain electrode of the 4th transistor is electrically connected with light-emitting component, and light-emitting component configuration is the Between 1 transistor and the 3rd equipotential line, the source electrode of the 1st transistor is electrically connected with the 2nd equipotential line.Therefore, if the 4th transistor For N-type, then the configuration of the 4th transistor is in the position for leaning on low potential side than light-emitting component, if the 4th transistor is p-type, the 4th is brilliant The configuration of body pipe is in the position for leaning on hot side than light-emitting component, therefore, when the 4th transistor becomes on state, even if the 4th is brilliant The source drain voltage of body pipe is smaller, is also capable of increasing the electric conductivity of the 4th transistor.That is, becoming on state in the 4th transistor And when light-emitting component being made to shine, the 4th transistor can be made to carry out line movement.As a result, as the 2nd electricity of high-voltage system power supply Position and the major part of the potential difference of the 3rd current potential are applied to light-emitting component, so, when making light-emitting component shine, it is not easily susceptible to the 4th The influence of the deviation of the threshold voltage of transistor.As a result, it is possible to improve the uniformity of the brightness between pixel.
The electro-optical device of (application examples 9) the application example is preferably, and the conducting resistance of the 4th transistor is lower than the hair The conducting resistance of optical element.
According to the structure of the application example, light-emitting component is set to shine making the 1st transistor and the 4th transistor on state When, the 4th transistor can be made to carry out line movement.As a result, generated in light-emitting component, the 1st transistor and the 4th transistor The major part of potential difference is applied to light-emitting component, so, when making light-emitting component shine, it is not easily susceptible to the threshold value of the 4th transistor The influence of the deviation of voltage.Thereby, it is possible to reduce the offset of the deviation of the brightness between pixel, gray scale.
The electro-optical device of (application examples 10) the application example is preferably, the pole of the 1st transistor and the 4th transistor Property is opposite.
According to the structure of the application example, the source electrode of the source electrode of the 1st transistor and the 4th transistor respectively with different potentials Equipotential line electrical connection.Therefore, the source potential of the 1st transistor and the source potential of the 4th transistor are fixed as respective current potential, because This, can increase the electric conductivity of two transistors and carry out line movement when two transistors become on state.
The electro-optical device of (application examples 11) the application example is preferably, described when the 2nd transistor is on state 4th transistor is off state.
According to the structure of the application example, make the 2nd transistor on state and from signal wire to storage circuit write-in figure When as signal, makes the 4th transistor off state and make the non-luminescent state of light-emitting component, it therefore, can be reliable with low-power consumption And (or rewriting) is write a signal at high speed to storage circuit.Thereby, it is possible to inhibit due to not writing correctly in storage circuit Enter the decline of the display of mistake caused by picture signal, the quality that image is shown.
The electro-optical device of (application examples 12) the application example is preferably, any one in the scan line, which is supplied to, to be made During 2nd transistor becomes the 1st of the selection signal of on state the, the control line, which is supplied to, makes the 4th transistor Inactive signal as off state.
According to the structure of the application example, during making the 2nd transistor become the 1st of on state the using selection signal, the 4th Transistor becomes off state, therefore, light-emitting component can be made not send out during by the 1st of picture signal write storage circuit the Light.
The electro-optical device of (application examples 13) the application example is preferably, and being supplied in the control line makes the 4th crystal During pipe becomes the 2nd of the activation signal of on state the, the scan line, which is supplied to, makes the 2nd transistor become off state Non-select signal.
According to the structure of the application example, during making the 4th transistor become the 2nd of on state the using activation signal, the 2nd Transistor becomes off state, therefore, can stop the picture signal to storage circuit during the 2nd that light-emitting component can shine Write-in.Furthermore it is possible to during independently controlling the 1st and during the 2nd, it therefore, can regardless of the length during the 1st The length for the 2nd period for making light-emitting component that can shine is different in various ways.Thereby, it is possible to drive to realize using digital time-division The display of higher gray scale.Also, due to can share in a plurality of pixels to control line supply signal (activation signal, it is non-swash Signal living), so, even if the subfield short in the presence of a vertical period of multi-strip scanning line more all than having selected during making the 2nd, Also easily electro-optical device can be driven.
The electro-optical device of (application examples 14) the application example is preferably, and the 1st transistor is N-type, the 4th transistor For p-type, set the 1st current potential as V1, the 2nd current potential be V2, the 3rd current potential is V3 when, be supplied to the control line The activation signal current potential be V3- (V1-V2) below.
According to the structure of the application example, the source electrode of the 1st transistor of N-type is electrically connected with the 2nd equipotential line, the 4th crystal of p-type The source electrode of pipe and the 3rd equipotential line, therefore, the 3rd current potential are higher than the 2nd current potential.When supplying the activation signal of " low " to grid, the 4th Transistor becomes on state, therefore, make the current potential V3- (V1-V2) of activation signal below, that is, ratio as the 4th transistor 3rd current potential of source potential reduces low-voltage system supply voltage, therefore, can reliably make the 4th crystal using activation signal Pipe becomes on state.In addition, more reducing the current potential of activation signal, the gate-source voltage of the 4th transistor is more towards negative direction Increase, therefore the conducting resistance decline of the 4th transistor under on state, when making light-emitting component shine, is not easily susceptible to the 4th The influence of the deviation of the threshold voltage of transistor.
The electro-optical device of (application examples 15) the application example is preferably, and the current potential of the activation signal is the 2nd current potential.
According to the structure of the application example, between the 1st current potential of current potential, the 2nd current potential and the 3rd current potential by making activation signal The 2nd minimum current potential, without importing new current potential.Moreover, can fully increase the exhausted of the gate-source voltage of the 4th transistor To value.Therefore, the conducting resistance that can fully reduce the 4th transistor under on state, can substantially eliminate the 4th transistor The deviation of threshold voltage the light emission luminance bring of light-emitting component is influenced.
The electro-optical device of (application examples 16) the application example is preferably, and the 1st transistor and the 2nd transistor are N Type, the current potential for being supplied to the selection signal of the scan line is the 1st current potential or more.
According to the structure of the application example, when from storage circuit of the configuration between the 1st equipotential line and the 2nd equipotential line to grid When supplying the signal of "high", the 1st transistor of N-type becomes on state, and therefore, the 1st current potential is higher than the 2nd current potential, and the of the N-type The source electrode of 1 transistor is electrically connected with the 2nd equipotential line.The source potential of 2nd transistor of N-type is between the 1st current potential and the 2nd current potential Current potential, but the current potential of the selection signal supplied from scan line to the grid of the 2nd transistor be the 1st current potential more than, therefore, can The 2nd transistor is set reliably to become on state.In addition, more making the current potential of selection signal be higher than the 1st current potential, under on state The conducting resistance of 2nd transistor more declines, therefore, can high speed and error-free motion, reliably carry out image to storage circuit The write-in of signal is rewritten.
The electro-optical device of (application examples 17) the application example is preferably, and the current potential of the selection signal is the 3rd current potential.
According to the structure of the application example, between the 1st current potential of current potential, the 2nd current potential and the 3rd current potential by making selection signal Highest 3rd current potential, without importing new current potential.Moreover, can fully increase the gate-source voltage of the 2nd transistor, because This, can fully reduce the conducting resistance of the 2nd transistor under on state, can high speed and error-free motion, reliably into Write-in, rewriting of the row to the picture signal of storage circuit.
The electro-optical device of (application examples 18) the application example is preferably, and the 1st transistor is p-type, the 4th transistor For N-type, set the 1st current potential as V1, the 2nd current potential be V2, the 3rd current potential is V3 when, be supplied to the control line The activation signal current potential be V3+ (V2-V1) more than.
According to the structure of the application example, the source electrode of the 1st transistor of p-type is electrically connected with the 2nd equipotential line, the 4th crystal of N-type The source electrode of pipe is electrically connected with the 3rd equipotential line, and therefore, the 3rd current potential is lower than the 2nd current potential.When the activation signal to grid supply "high" When, the 4th transistor become on state, but make activation signal current potential V3+ (V2-V1) or more, i.e., than as the 4th crystal 3rd current potential of the source potential of pipe improves low-voltage system supply voltage, therefore, can reliably make the 4th using activation signal Transistor becomes on state.In addition, more improving the current potential of activation signal, the gate-source voltage of the 4th transistor more increases, leads The conducting resistance of the 4th transistor under logical state more declines, and therefore, when making light-emitting component shine, is not easily susceptible to the 4th transistor Threshold voltage deviation influence.
The electro-optical device of (application examples 19) the application example is preferably, and the current potential of the activation signal is the 2nd current potential.
According to the structure of the application example, between the 1st current potential of current potential, the 2nd current potential and the 3rd current potential by making activation signal Highest 2nd current potential, without importing new current potential.Moreover, can fully increase the gate-source voltage of the 4th transistor.Cause This, can fully reduce the conducting resistance of the 4th transistor under on state, can substantially eliminate the threshold value of the 4th transistor The deviation of voltage influences the light emission luminance bring of light-emitting component.
The electro-optical device of (application examples 20) the application example is preferably, and the 1st transistor and the 2nd transistor are P Type, the current potential for being supplied to the selection signal of the scan line is the 1st current potential or less.
According to the structure of the application example, when from storage circuit of the configuration between the 1st equipotential line and the 2nd equipotential line to grid When supplying the signal of " low ", the 1st transistor of p-type becomes on state, and therefore, the 1st current potential is lower than the 2nd current potential, and the of the p-type 1 transistor source is electrically connected with the 2nd equipotential line.The source potential of 2nd transistor of p-type is between the 1st current potential and the 2nd current potential Current potential, but the current potential of the selection signal supplied from scan line to the grid of the 2nd transistor is the 1st current potential hereinafter, therefore, Neng Gouke The 2nd transistor is set to become on state by ground.In addition, more make the current potential of selection signal lower than the 1st current potential, under on state the The conducting resistance of 2 transistors more declines, therefore, can high speed and error-free motion, reliably carry out to the image of storage circuit letter Number write-in, rewrite.
The electro-optical device of (application examples 21) the application example is preferably, and the current potential of the selection signal is the 3rd current potential.
According to the structure of the application example, between the 1st current potential of current potential, the 2nd current potential and the 3rd current potential by making selection signal The 3rd minimum current potential, without importing new current potential.Moreover, can fully increase the gate-source voltage of the 2nd transistor, because This, can fully reduce the conducting resistance of the 2nd transistor under on state, can high speed and error-free motion, reliably into Write-in, rewriting of the row to the picture signal of storage circuit.
The electronic equipment of (application examples 22) the application example is characterized in that thering is electro-optical device described in above application examples.
According to the structure of the application example, such as it can be realized the high-quality of the image for being shown in the electronic equipments such as head-mounted display Amount.
Detailed description of the invention
Fig. 1 is the figure for illustrating the summary of electronic equipment of present embodiment.
Fig. 2 is the in-built figure for illustrating the electronic equipment of present embodiment.
Fig. 3 is the figure for illustrating the optical system of electronic equipment of present embodiment.
Fig. 4 is the approximate vertical view for showing the structure of electro-optical device of present embodiment.
Fig. 5 is the circuit block diagram of the electro-optical device of present embodiment.
Fig. 6 is the figure for illustrating the structure of pixel of present embodiment.
Fig. 7 is the figure for illustrating the digital drive of electro-optical device of present embodiment.
Fig. 8 is the figure for illustrating the structure of pixel circuit of embodiment 1.
Fig. 9 is the figure for illustrating the driving method of pixel circuit of present embodiment.
Figure 10 is the figure for illustrating the structure of pixel circuit of variation 1.
Figure 11 is the figure for illustrating the structure of pixel circuit of variation 2.
Figure 12 is the figure for illustrating the structure of pixel circuit of variation 3.
Figure 13 is the circuit block diagram of the electro-optical device of the 2nd embodiment of the invention.
Figure 14 is the figure for illustrating the structure of pixel of the 2nd embodiment of the invention.
Figure 15 is the figure for illustrating the structure of pixel circuit of embodiment 2.
Figure 16 is the figure for illustrating the structure of pixel circuit of variation 4.
Figure 17 is the figure for illustrating the structure of pixel circuit of variation 5.
Figure 18 is the figure for illustrating the structure of pixel circuit of variation 6.
Figure 19 is the circuit block diagram of the electro-optical device of the 3rd embodiment of the invention.
Figure 20 is the figure for illustrating the structure of pixel of the 3rd embodiment of the invention.
Figure 21 is the figure for illustrating the structure of pixel circuit of the 3rd embodiment of the invention.
Label declaration
10: electro-optical device；20: light-emitting component；31, the 31A: the 1 transistor；32, the 32A: the 2 transistor；33: the 3 crystal Pipe；34, the 34A: the 4 transistor；41,41A, 41B, 41C, 71,71A, 71B, 71C, 81: pixel circuit；42: scan line；43: letter Number line；44: control line；46: low potential line (the 2nd equipotential line)；47: the 1 high potential lines (the 1st equipotential line)；48: the 2 low potentials Line (the 3rd equipotential line)；49: the 2 high potential lines (the 3rd equipotential line)；60: storage circuit；100: (electronics is set head-mounted display It is standby).
Specific embodiment
Hereinafter, using attached drawing, embodiments of the present invention will be described.In the following figures, in order to make each layer or each Component becomes the size for the degree that can be identified on attached drawing, keeps scale bar different according to each layer or each component.
" summary of electronic equipment "
Firstly, being illustrated referring to Fig.1 to the summary of electronic equipment.Fig. 1 is the electronic equipment for illustrating present embodiment The figure of summary.
Head-mounted display 100 is an example of the electronic equipment of present embodiment, has electro-optical device 10 (referring to Fig. 3). As shown in Figure 1, head-mounted display 100 has appearance as glasses.Keep the user for having worn the head-mounted display 100 visual As the image light GL (referring to Fig. 3) of image, and make user's visual ambient light in a manner of having an X-rayed.In short, wearing display The perspective function that device 100, which has, makes ambient light and image light GL is overlappingly shown, the head-mounted display 100 have wide visual field angle and High-performance, and small-size light-weight.
Head-mounted display 100 includes perspective component 101, by the covering at the moment of user；Frame 102, bearing perspective Component 101；And the 1st built-in portion 105a and the 2nd built-in portion 105b, they are attached to from the left and right of frame 102 two In the cover portion at end to the part of the leg section (temple) at rear.
Perspective component 101 is the covering at the moment by user and (penetrates eye with the optical component of thicker thickness flexure Cover), it is divided into the 1st opticator 103a and the 2nd opticator 103b.In Fig. 1, by the 1st opticator 103a in left side and the 1st The 1st display equipment 151 that built-in portion 105a is composed is to show the part of the right eye virtual image with having an X-rayed, and can also individually be made It is functioned for the electronic equipment with display function.Also, it is filled as built in the 2nd opticator 103b on right side and the 2nd in Fig. 1 The 2nd display equipment 152 that the portion 105b of setting is composed is to form the part of the left eye virtual image with having an X-rayed, can also be aobvious separately as band Show that the electronic equipment of function functions.It is shown in equipment 152 in the 1st display equipment 151 and the 2nd and is assembled with electro-optical device 10 (referring to Fig. 3).
" internal structure of electronic equipment "
Fig. 2 is the in-built figure for illustrating the electronic equipment of present embodiment.Fig. 3 is the electronics for illustrating present embodiment The figure of the optical system of equipment.Then, the internal structure of electronic equipment and optical system are illustrated referring to Fig. 2 and Fig. 3.Separately Outside, the 1st display equipment 151 is illustrated as the example of electronic equipment in figure 2 and figure 3, but the 2nd display equipment 152 and 1st display equipment, 151 bilateral symmetry, has almost the same construction.Therefore, the 1st display equipment 151 is illustrated, is omitted The detailed description of 2nd display equipment 152.
As shown in Fig. 2, the 1st display equipment 151 has projection arrangement for perspective 170 and electro-optical device 10 (referring to Fig. 3).Projection Arrangement for perspective 170 has the projection lens 130 as the prism 110 of light guide member, light-transmissive member 150, imaging, and (reference is schemed 3).Prism 110 and light-transmissive member 150 are integrated by engagement, and for example with the upper surface 110e and frame of prism 110 The mode that 161 lower surface 161e connects is firmly fixed at the downside of frame 161.
Projection lens 130 is fixed on the end of prism 110 by the lens barrel 162 for storing the projection lens 130.Projection is saturating Prism 110 and light-transmissive member 150 in view apparatus 170 are equivalent to the 1st opticator 103a in Fig. 1, project arrangement for perspective 170 projection lens 130 and electro-optical device 10 is equivalent to the 1st built-in portion 105a in Fig. 1.
Prism 110 in projection arrangement for perspective 170 be in plan view along the component of the curved arc-shaped of face, can Consider the 2nd component prism 112 of the 1st component prism 111 for being divided into the center side close to nose and the perimeter sides far from nose.The For the configuration of 1 component prism 111 in light emitting side, being used as with the 1st face S11 (referring to Fig. 3), the 2nd face S12 and the 3rd face S13 has light Learn the side of function.
In light incident side, there is the 4th face S14 (referring to Fig. 3) and the 5th face S15 to be used as has the configuration of 2nd component prism 112 The side of optical function.Wherein, the 1st face S11 is adjacent with the 4th face S14, and the 3rd face S13 is adjacent with the 5th face S15, in the 1st face S11 The 2nd face S12 is configured between the 3rd face S13.Also, prism 110 has the upper surface adjacent with the 1st face S11 to the 4th face S14 110e。
Prism 110 is formed by the resin material for showing higher photopermeability in the visible range, for example, by mould Thermoplastic resin is injected in tool and is solidified and is formed.The main part 110s (referring to Fig. 3) of prism 110 is integrally formed Product, but be contemplated that and be divided into the 1st component prism 111 and the 2nd component prism 112.1st component prism 111 can guide and project shadow As light GL, and extraneous x ray fluoroscopy x can be made.2nd component prism 112 can be incident and guides image light GL.
Light-transmissive member 150 is fixed as one with prism 110.Light-transmissive member 150 is the perspective function of auxiliary prism 110 Component (auxiliary prism).Light-transmissive member 150 is formed by resin material, which shows higher in the visible range Photopermeability, have the refractive index roughly the same with the main part 110s of prism 110.Light-transmissive member 150 for example passes through The molding of thermoplastic resin is formed.
As shown in figure 3, projection lens 130 is along incident side optical axis for example with 3 lens 131,132,133.Each lens 131,132,133 be the light incident surface about lens the symmetrical lens of center axis rotation, more than at least one be aspherical Mirror.
Projection lens 130 is incident on the image light GL projected from electro-optical device 10 in prism 110 and makes eye E Y again Imaging.In short, projection lens 130 be for make from each pixel of electro-optical device 10 project image light GL via prism 110 and Make the relay optical system of eye E Y reimaging.Projection lens 130 is maintained in lens barrel 162, and electro-optical device 10 is fixed on mirror One end of cylinder 162.2nd component prism 112 of prism 110 links with the lens barrel 162 of projection lens 130 is kept, and supports indirectly Projection lens 130 and electro-optical device 10.
The head of user is being worn on as head-mounted display 100 and by the electronic equipment of the type covered at the moment In, it is desirable that small-sized and lightweight.In addition, in the electro-optical device 10 used in the electronic equipment such as head-mounted display 100, it is desirable that High resolution (miniaturization of pixel), more gray processings of display and low power consumption.
[structure of electro-optical device]
Then, it is illustrated referring to structure of the Fig. 4 to electro-optical device.Fig. 4 is the electro-optical device for showing the 1st embodiment The approximate vertical view of structure.It in the present embodiment, is that there is organic EL element having as light-emitting component using electro-optical device 10 It is illustrated in case where machine EL device.As shown in figure 4, the electro-optical device 10 of present embodiment has device substrate 11 and protects Protect substrate 12.Colour filter (not shown) is provided on device substrate 11.Device substrate 11 and protective substrate 12 are across not shown Filler be oppositely disposed and bond together.
Device substrate 11 is for example made of single crystalline semiconductor substrate (such as monocrystalline silicon substrate).Device substrate 11 has display The region E and non-display area D for surrounding display area E.In the E of display area, for example, issuing the sub-pixel of blue (B) light 58B, the sub-pixel 58G for issuing green (G) light, issue red (R) light sub-pixel 58R be for example arranged in it is rectangular.In sub- picture Plain 58B, sub-pixel 58G, light-emitting component 20 is respectively arranged in sub-pixel 58R (referring to Fig. 6).In electro-optical device 10, with packet The pixel 59 of 58B containing sub-pixel, sub-pixel 58G and sub-pixel 58R are the unit of display, provide the display of full color.
In addition, in the present specification, not distinguished sometimes to sub-pixel 58B, sub-pixel 58G and sub-pixel 58R, general name For sub-pixel 58.Display area E is the region for making the light issued from sub-pixel 58 penetrate, facilitate display.Non-display area D is The light issued from sub-pixel 58 is not set to penetrate, be helpless to the region of display.
Device substrate 11 is bigger than protective substrate 12, arranges along the 1st side of the device substrate 11 exposed from protective substrate 12 There are multiple external connection terminals 13.It is driven in multiple external connections with signal wire is provided between terminal 13 and display area E Circuit 53.With the 1st while the vertical the other 2nd while and display area E between be provided with scan line drive circuit 52.In addition, Be provided between the 3rd side and display area E control line drive circuit 54, the 3rd it is vertical while with the 1st and with the 2nd side phase It is right.
Protective substrate 12 is smaller than device substrate 11, is configured to expose external connection terminal 13.Protective substrate 12 is light Quartz base plate or glass substrate etc. can be used for example in the substrate of permeability.Protective substrate 12 has to be protected in the E of display area It is configured at the effect that the light-emitting component 20 of sub-pixel 58 does not damage, is configured at least opposite with display area E.
In addition, colour filter can be set on the light-emitting component 20 in device substrate 11, also can be set in protective substrate 12.In the case where issuing from light-emitting component 20 with the structure of assorted corresponding light, colour filter is not required.In addition, protection Substrate 12 is not required, and is also possible to replace protective substrate 12 and be provided with protection light-emitting component 20 on device substrate 11 The structure of protective layer.
In the present specification, X-direction will be set as along the direction on above-mentioned 1st side for being arranged with external connection terminal 13 (line direction) will be set along with the 1st in the direction (column direction) of vertical and relative to each other other both sides (when the 2nd, the 3rd side) For Y-direction.In the present embodiment, for example, using the configuration of so-called band-like (stripe) mode: obtaining same color The sub-pixel 58 of light is arranged along column direction (Y-direction), and the sub-pixel 58 for obtaining the light of different colours is arranged along line direction (X-direction) Column.
In addition, the configuration of the sub-pixel 58 on line direction (X-direction) is not limited to the sequence of B, G, R shown in Fig. 4, such as It can be the sequence of R, G, B.In addition, the configuration of sub-pixel 58 is not limited to ribbon-like manner, it is also possible to delta mode, the side Bayer Band-like (S-stripe) mode of formula, S, in addition, the shape of sub-pixel 58B, 58G, 58R, size be also not necessarily limited to it is identical.
(the 1st embodiment)
" circuit structure of electro-optical device "
Then, it is illustrated referring to circuit structure of the Fig. 5 to electro-optical device.Fig. 5 is the electro-optical device of present embodiment Circuit block diagram.As shown in figure 5, being formed with multi-strip scanning line 42 intersected with each other and more in the display area E of electro-optical device 10 Signal line 43, also, sub-pixel 58 and each infall of scan line 42 and signal wire 43 be accordingly arranged in it is rectangular.For Each sub-pixel 58 is provided with the pixel circuit 41 comprising light-emitting component 20 (referring to Fig. 8) etc..
In the display area E of electro-optical device 10, control line 44 is accordingly formed with each scan line 42.42 He of scan line Control line 44 extends in line direction (X-direction).Also, in the E of display area, accordingly it is formed with each signal wire 43 complementary Signal wire 45.Signal wire 43 and complementary signal line 45 extend in column direction (Y-direction).
In electro-optical device 10, M row × N column sub-pixel 58 is configured to rectangular in the E of display area.Specifically, M scan line 42, M control line 44, N signal line 43 and N complementary signal line 45 are formed in the E of display area.Separately Outside, the integer that M and N is 2 or more, in the present embodiment, as an example, M=720, N=1280 × p.P be 1 or more it is whole Number indicates the quantity of the Essential colour of display.In the present embodiment, with p=3, i.e. the Essential colour of display for R, G, B 3 colors It is illustrated for situation.
Electro-optical device 10 has driving portion 50 outside the E of display area.It is each on the E of display area from driving portion 50 to being arranged in Pixel circuit 41 supplies various signals, and with pixel 59 (sub-pixels 58 of 3 colors) for the unit of display, figure is shown in the E of display area Picture.Driving portion 50 includes driving circuit 51 and control device 55.Control device 55 supplies display signal to driving circuit 51.It drives Dynamic circuit 51 is according to display signal, via multi-strip scanning line 42, a plurality of signal wire 43 and a plurality of control line 44 to each pixel Circuit 41 supplies driving signal.
Also, in non-display area D and display area E configured with the 1st as the 1st equipotential line for being supplied to the 1st current potential High potential line 47, as the 2nd equipotential line for being supplied to the 2nd current potential low potential line 46, as be supplied to the 3rd current potential the 3rd electricity 2nd high potential line 49 of bit line.1st high potential line 47 supplies the 1st current potential to each pixel circuit 41, and low potential line 46 is to each pixel Circuit 41 supplies the 2nd current potential, and the 2nd high potential line 49 supplies the 3rd current potential to each pixel circuit 41.
In the present embodiment, the 1st current potential (V1) is the 1st high potential VDD1 (such as V1=VDD1=3.0V), the 2nd current potential It (V2) is low potential VSS (such as V2=VSS=0V) that the 3rd current potential (V3) is the 2nd high potential VDD2 (such as V3=VDD2= 7.0V).Therefore, the 1st current potential is higher than the 2nd current potential, and the 3rd current potential is higher than the 1st current potential.
In the present embodiment, low-voltage is constituted by the 1st current potential (the 1st high potential VDD1) and the 2nd current potential (low potential VSS) System power supply constitutes high-voltage system power supply by the 3rd current potential (the 2nd high potential VDD2) and the 2nd current potential (low potential VSS).2nd electricity Position is the current potential in low-voltage system power supply and high-voltage system power supply as benchmark.
In addition, in the present embodiment, as an example, the 2nd equipotential line (low potential line 46), the 1st equipotential line (the 1st high electricity Bit line 47) and the 3rd equipotential line (the 2nd high potential line 49) extend in the E of display area along line direction, but they can also be along column side To extension, a part for being also possible to them extends along line direction, and other parts extend along column direction, they can also be along row Column direction configures in lattice shape.
Driving circuit 51 includes scan line drive circuit 52, signal-line driving circuit 53 and control line drive circuit 54.It drives Dynamic circuit 51 is set to non-display area D (referring to Fig. 4).In the present embodiment, driving circuit 51 and the formation of pixel circuit 41 On device substrate 11 (being monocrystalline silicon substrate in the present embodiment) shown in Fig. 4.Specifically, driving circuit 51, pixel Circuit 41 is made of elements such as the transistors that is formed on monocrystalline silicon substrate.
Scan line drive circuit 52 is electrically connected with scan line 42.Scan line drive circuit 52 is exported to each scan line 42 and is scanned Signal (Scan), the scanning signal select in the row direction or do not select pixel circuit 41.Scan line 42 sends out the scanning signal It is sent to pixel circuit 41.In other words, scanning signal has selection state and nonselection mode, and scan line 42, which receives, comes from scan line The scanning signal of driving circuit 52 can be selected suitably.Scanning signal takes the 2nd current potential (low potential VSS) with the 3rd current potential, and (the 2nd is high Current potential VDD2) between current potential.
As described later, in the present embodiment, the 2nd transistor 32 and complementary 2nd transistor 38 are N-type (referring to Fig. 8), Therefore, select the scanning signal (selection signal) under state for "high" (high potential), scanning signal (the non-choosing under nonselection mode Select signal) it is " low " (low potential).Selection signal is set as the high potential of the 1st current potential (V1) or more, preferably the 3rd current potential (V3).In addition, non-select signal is set as the 2nd current potential (V2) low potential below, preferably the 2nd current potential (V2).
In addition, being labeled as i-th in the scanning signal that the scan line 42 for determining the i-th row into M scan line 42 supplies Capable scanning signal Scan i.Scan line drive circuit 52 has shift-register circuit (not shown), in shift register electricity The signal shifted in road is exported according to every level-one as shift output signal.Sweeping for the 1st row is formed using the shift output signal Retouch signal Scan1~M row scanning signal Scan M.
Signal-line driving circuit 53 is electrically connected with signal wire 43 and complementary signal line 45.Signal-line driving circuit 53 has Shift-register circuit (not shown) or decoder circuit or demultplexer circuit etc..Signal-line driving circuit 53 and scan line 42 selection is synchronously supplied respectively to picture signal (Data) to N signal line 43, is supplied respectively to mutually to N complementary signal line 45 It mends picture signal (XData).Picture signal and complementary image signal are that take the 1st current potential (be in the present embodiment VDD1) and the 2 current potentials (are in the present embodiment the digital signal of any one current potential in VSS).
In addition, being labeled as jth when determining the picture signal that the signal wire 43 of the jth column into N signal line 43 supplies The picture signal Data j of column is equally determining what the complementary signal line 45 of the jth column into N complementary signal line 45 supplied When complementary image signal, labeled as the complementary image signal XData j of jth column.
Control line drive circuit 54 is electrically connected with control line 44.Line drive circuit 54 is controlled to each control divided by each row The intrinsic control signal of the output row of line 44.The control signal is supplied to the pixel circuit 41 of corresponding row by control line 44.Control Signal has state of activation and unactivated state, and control line 44 receives the control signal from control line drive circuit 54, can fit When as state of activation.Control signal takes the electricity between the 2nd current potential (low potential VSS) and the 3rd current potential (the 2nd high potential VDD2) Position.
As described later, in the present embodiment, the 4th transistor 34 is p-type (referring to Fig. 8), therefore, the control under state of activation Signal (activation signal) processed is " low " (low potential), and the control signal (inactive signal) under unactivated state is "high" (high electricity Position).The 1st current potential is described described for V1, the 2nd current potential describe for V2, the 3rd current potential as V3 when, activation signal is set as V3- (V1-V2) hereinafter, preferably the 2nd current potential (V2).In addition, inactive signal is set as the 3rd current potential (V3) or more, the preferably the 3rd Current potential (V3).
In addition, being labeled as i-th in the control signal that the control line 44 for determining the i-th row into M control line 44 supplies Capable control signal Enb i.Activation signal (or inactive signal) work can be supplied according to every row by controlling line drive circuit 54 To control signal, activation signal (or inactive signal) can also be supplied simultaneously to multirow.In the present embodiment, control line It is (or non-that driving circuit 54 supplies activation signal via control line 44 simultaneously to whole pixel circuits 41 positioned at display area E Activation signal).
Control device 55 includes display signal supply circuit 56 and VRAM (Video Random Access Memory) Circuit 57.VRAM circuit 57 temporarily stores frame image etc..Display is temporarily stored with signal supply circuit 56 according to VRAM circuit 57 Frame image generate display with signal (picture signal, clock signal etc.), which is supplied to driving circuit 51 with signal.
In the present embodiment, driving circuit 51, pixel circuit 41 is formed in device substrate 11 (is in the present embodiment Monocrystalline silicon substrate).Specifically, driving circuit 51, pixel circuit 41 are by the transistor unit structure that is formed on monocrystalline silicon substrate At.
Control device 55 is made of semiconductor integrated circuit, the semiconductor integrated circuit be formed in by with device substrate 11 not On the substrates (not shown) of compositions such as same single crystalline semiconductor substrate.The substrate for being formed with control device 55 utilizes flexible printing base Plate (Flexible Printed Circuits:FPC) is connect with the external connection terminal 13 being arranged on device substrate 11. Display signal is supplied from control device 55 to driving circuit 51 via the flexible printing substrate.
" structure of pixel "
Then, it is illustrated referring to structure of the Fig. 6 to the pixel of present embodiment.Fig. 6 is the picture for illustrating present embodiment The figure of the structure of element.
As described above, will include 59 conduct of pixel of sub-pixel 58 (sub-pixel 58B, 58G, 58R) in electro-optical device 10 The unit of display shows image.In the present embodiment, the length a of the line direction (X-direction) of sub-pixel 58 is 4 microns (μm), The length b of the column direction (Y-direction) of sub-pixel 58 is 12 microns (μm).In other words, on the line direction (X-direction) of sub-pixel 58 Configuring spacing is 4 microns (μm), and the configuration spacing on the column direction (Y-direction) of sub-pixel 58 is 12 microns (μm).
The pixel electricity comprising light-emitting component (Light Emitting Device:LED) 20 is provided in each sub-pixel 58 Road 41.Light-emitting component 20 projects white light.Electro-optical device 10 has the (not shown) of the light transmission for making to project from light-emitting component 20 Colour filter.Colour filter includes the colour filter of color corresponding with the Essential colour p of display.In the present embodiment, Essential colour p=3, The assorted colour filter of B, G, R are respectively correspondingly configured with sub-pixel 58B, sub-pixel 58G, sub-pixel 58R.
In the present embodiment, an example as light-emitting component 20 has used organic EL (Electro Luminescence) element.Organic EL element can have the optical resonance construction of the intensity of the light of amplification specific wavelength.That is, May be constructed are as follows: sub-pixel 58B extracted from the white light that light-emitting component 20 is issued blue light ingredient, sub-pixel 58G from The light ingredient of green, the white that sub-pixel 58R is issued from light-emitting component 20 are extracted in the white light that light-emitting component 20 is issued Red light ingredient is extracted in light.
In addition, Essential colour can also be set as to p=4, the color other than preparation B, G, R is for example in addition to above-mentioned example The colour filter (the actually sub-pixel 58 of color-filterless) that white light is used can also prepare yellow or cyan etc. as colour filter The colour filter of other coloured light.In addition, as light-emitting component 20, also can be used the light-emitting diodes such as gallium nitride (GaN), Semiconductor Laser device etc..
" digital drive of electro-optical device "
Then, it is carried out referring to image display method of the Fig. 7 to the digital drive of the electro-optical device 10 based on present embodiment Explanation.Fig. 7 is the figure for illustrating the digital drive of electro-optical device of present embodiment.
Electro-optical device 10 shows defined image in display area E (referring to Fig. 4) by digital drive.That is, being configured at The light-emitting component 20 (referring to Fig. 6) of each sub-pixel 58 takes any one in the two-value of luminous (bright display) or non-luminescent (show slinkingly and show) The gray scale of a state, shown image is determined by the ratio of the luminous period of each light-emitting component 20.It is referred to as time-division drive It is dynamic.
As shown in fig. 7, will show that 1 (F) of an image is divided into multiple subfields (SF) in time-division driving, according to Each subfield (SF) controls the luminous and non-luminescent of light-emitting component 20, so that representing gradation is shown.Here, as an example, with logical It crosses 6 time-division grayscale modes and carries out 26It is illustrated in case where the display of=64 gray scales.In 6 time-division grayscale modes In, 1 field F is divided into 6 subfield SF1~SF6.
In Fig. 7, i-th of subfield is indicated with SFi in 1 field F, is shown from the 1st subfield SF1 to the 6th subfield 6 subfields of SF6.P2 (P2-1~P2-6) during each subfield SF includes the display as the 2nd period, and include as needed As non-display period (signal address period) P1 (P1-1~P1-6) during the 1st.
In addition, in the present specification, not distinguishing subfield SF1~SF6 sometimes and collectively referred to as subfield SF, not distinguishing the non-display phase Between P1-1~P1-6 and collectively referred to as non-display period P1, P2-1~P2-6 during not distinguishing display and P2 during collectively referred to as showing.
The P2 during display of light-emitting component 20 shines or does not shine, and does not send out in non-display period (signal address period) P1 Light.Non-display period P1 is used for (referring to Fig. 8) the write-in picture signal of storage circuit 60 or adjustment display time etc., shortest In the case that subfield (such as SF1) is long, non-display period P1 (P1-1) also can be omitted.
In 6 time-division grayscale modes, P2 (P2-1~P2-6) during the display of each subfield SF is set as (SF1's P2-1): (P2-2 of SF2): (P2-3 of SF3): (P2-4 of SF4): (P2-5 of SF5): (P2-6 of SF6)=1:2:4:8: 16:32.For example, in the case where showing image with frame rate for the row-by-row system of 30Hz, 1 frame=1 (F)=33.3 millisecond (msec)。
In the case of the above-described example, when the non-display period P1 (P1-1~P1-6) in each subfield SF is 1 millisecond, if It is set to (P2-1 of SF1)=0.434 millisecond, (P2-2 of SF2)=0.868 millisecond, (P2-3 of SF3)=1.735 milliseconds, (SF4 P2-4)=3.471 milliseconds, (P2-5 of SF5)=6.942 milliseconds, (P2-6 of SF6)=13.884 milliseconds.
Here, during indicating the time of non-display period P1 with x (sec), indicating shortest display with y (sec) P2 ( In the case where above-mentioned example, P2-1 during being the display in the 1st subfield SF1) time, indicate with g the digit (=son of gray scale The number of SF), when indicating field frequencies range with f (Hz), the relationship between them is indicated with formula 1 below.
gx+(2g-1)y-1/f…(I)
In the digital drive of electro-optical device 10, according to the luminous period in 1 field F and always during display, the ratio between P2 is realized Gray scale is shown.For example, in the black display that gray scale is " 0 ", during whole displays of 6 subfield SF1~SF6 P2-1~ P2-6 makes light-emitting component 20 not shine.On the other hand, in the white display of gray scale " 63 ", in the whole of 6 subfield SF1~SF6 Display during P2-1~P2-6 make light-emitting component 20 shine.
Also, in the case where obtaining the display of intermediate luminance of such as gray scale " 7 " in 64 gray scales, make light-emitting component 20 The display phase of P2-2 during the display of P2-1, the 2nd subfield SF2, the 3rd subfield SF3 during the display of the 1st subfield SF1 Between P2-3 shine, so that the P2-4~P2-6 during the display of other subfield SF4~SF6 of light-emitting component 20 is not shone.In this way, logical P2, which shines, during crossing the appropriate display for selecting each subfield SF for making light-emitting component 20 in 1 field F of composition does not still shine, can Carry out the display of intermediate gray scale.
In addition, in the electro-optical device (organic el device) of previous analog-driven, according to the grid electricity of driving transistor Position carries out simulation control to the electric current for flowing through organic EL element, shows to carry out gray scale, therefore, because driving the voltage of transistor The deviation of current characteristics or threshold voltage and lead to the offset that the deviation or gray scale of brightness are generated between pixel, so as to cause aobvious Show that quality declines.In this regard, setting compensation drives the voltage-current characteristic or threshold of transistor as described in Patent Document 1 When the compensation circuit of the deviation of threshold voltage, due to also flowing through electric current in compensation circuit, so, it will lead to power consumption increase.
In addition, in order to make to show more gray processings, needing to increase storage as analog signal in existing organic el device Picture signal capacity cell capacitance, therefore, it is difficult to realize high resolution (miniaturization of pixel) simultaneously, and with The charge and discharge of bulky capacitor element, power consumption also increase with it.In other words, in existing organic el device, there are difficult to realize It can be with the project of low-power consumption display of high resolution and the electro-optical device of the high quality graphic of more gray scales.
In the electro-optical device 10 of present embodiment, the number that is acted by then passing through the two-value of conduction and cut-off Driving, so, light-emitting component 20 takes the state of any one of luminous or non-luminous two-value.Therefore, with the feelings of analog-driven Condition is compared, and the influence of the voltage-current characteristic of transistor or the deviation of threshold voltage is not easily susceptible to, and therefore, can get in pixel 59 The display image of the less high quality of the offset of the deviation or gray scale of brightness between (sub-pixel 58).Also, in digital drive In, it does not need therefore to can be realized pixel 59 with the capacity cell of required large capacity in the case where analog-driven The miniaturization of (sub-pixel 58) is easy to carry out high resolution, and can reduce associated with the charge and discharge of bulky capacitor element Power consumption.
Also, in the digital drive of electro-optical device 10, the number g of the subfield SF of 1 field F is constituted by increasing, it can Easily improve grey.In this case, shortest by merely making when having non-display period P1 as described above P2 shortens during display, can be improved grey.For example, being set as g=8 in the row-by-row system of frame rate f=30Hz and carrying out It, only can will most by formula 1 when the time of non-display period P1 is set as x=1 milliseconds in the case where the display of 256 gray scales The time of (P2-1 of SF1) is set as y=0.100 milliseconds during short display.
It is described in detail below, in the digital drive of electro-optical device 10, the non-display period P1 as the 1st period can be set For the signal address period (or during rewriting the signal rewriting of picture signal) that picture signal is written to storage circuit 60.Therefore, It just can be simply from 6 gray scales without changing signal address period (that is, not having to the clock frequency for changing driving circuit 51) The gray scale that display becomes 8 is shown.
Also, in the digital drive of electro-optical device 10, during subfield SF or during the F of field, the son of display is changed The picture signal of the storage circuit 60 (referring to Fig. 8) of pixel 58 is written over.On the other hand, depositing for the sub-pixel 58 of display is not changed The picture signal on storage road 60 is not written over (holding), so, realize low-power consumption.That is, when using this structure, can be realized as Under electro-optical device 10: reduce energy consumption, and the deviation or ash of the brightness between display pixel 59 (sub-pixel 58) The less high gray scale of offset of degree and high-resolution image.
(embodiment 1)
" structure of pixel circuit "
Then, the structure of the pixel circuit of the 1st embodiment is illustrated by taking embodiment and variation as an example.Firstly, Referring to Fig. 8, the structure of the pixel circuit of the embodiment 1 of the 1st embodiment is illustrated.Fig. 8 is the pixel for illustrating embodiment 1 The figure of the structure of circuit.
As shown in figure 8, for each sub-pixel 58 of configuration corresponding with the infall of scan line 42 and signal wire 43, setting There is pixel circuit 41.Control line 44 is configured along scan line 42, configures complementary signal line 45 along signal wire 43.Each pixel circuit 41 is corresponding with scan line 42, signal wire 43, control line 44 and complementary signal line 45.
In addition, in the 1st embodiment (embodiment 1 and variation below), from the 1st high potential line 47 to each pixel electricity Road 41 supplies the 1st current potential (VDD1), the 2nd current potential (VSS) is supplied from low potential line 46 to each pixel circuit 41, from the 2nd high potential Line 49 supplies the 3rd current potential (VDD2) to each pixel circuit 41.
The pixel circuit 41 of embodiment 1 include the 1st transistor 31 of N-type, light-emitting component 20, p-type the 4th transistor 34, The 2nd transistor 38 of complementation of storage circuit 60, the 2nd transistor 32 of N-type and N-type.Since pixel circuit 41 includes storage circuit 60, so, electro-optical device 10 is able to carry out digital drive, with the analog-driven the case where compared with, be able to suppress between sub-pixel 58 The deviation of light emission luminance of light-emitting component 20 of display therefore can reduce the deviation of the display between pixel 59.
1st transistor 31, light-emitting component 20 and the 4th transistor 34 are configured in series in the 3rd equipotential line (the 2nd high potential Line 49) and the 2nd equipotential line (low potential line 46) between.The configuration of storage circuit 60 is at the 1st equipotential line (the 1st high potential line 47) and the Between 2 equipotential lines (low potential line 46).2nd transistor 32 configures between storage circuit 60 and signal wire 43.Complementary 2nd crystal Pipe 38 configures between storage circuit 60 and complementary signal line 45.
Storage circuit 60 includes the 1st phase inverter 61 and the 2nd phase inverter 62.Storage circuit 60 is by the two phase inverters 61,62 Connection is circlewise constituted, and is formed so-called static memory and is stored to the digital signal as picture signal.1st is anti- The output terminal 25 of phase device 61 is electrically connected with the input terminal 28 of the 2nd phase inverter 62, the output terminal 27 of the 2nd phase inverter 62 and The input terminal 26 of 1 phase inverter 61 is electrically connected.
In addition, terminal (output or input) A refers to terminal (output or input) B state being electrically connected in the present specification The logic of the logical AND terminal B of terminal A can be with identical state, for example, even if being configured with crystal between terminal A and terminal B Pipe, resistive element, diode etc., the state being alternatively referred to as electrically connected.In addition, being expressed as that " transistor, element configuration are in terminal A Between terminal B " in the case where " configuration " instead of layout on configuration, the configuration on circuit diagram.
The digital signal that storage circuit 60 stores is the two-value of "high" or " low ".In the present embodiment, in the 1st phase inverter Under the case where 61 output terminal 25 is " low " (the case where output terminal 27 of the 2nd phase inverter 62 is "high"), light-emitting component 20 For the state that can be shone, (the output terminal 27 of the 2nd phase inverter 62 the case where the output terminal 25 of the 1st phase inverter 61 is "high" The case where for " low ") under, light-emitting component 20 does not shine.
In the present embodiment, two phase inverters 61,62 for constituting storage circuit 60 are configured in the 1st equipotential line (the 1st current potential Line 47) and the 2nd equipotential line (the 2nd equipotential line 46) between, VDD and conduct to the supply of two phase inverters 61,62 as the 1st current potential The VSS of 2nd current potential.Therefore, "high" is equivalent to the 1st current potential (VDD1), and " low " is equivalent to the 2nd current potential (VSS).
For example, when the output terminal 25 for storing digital signal and the 1st phase inverter 61 in storage circuit 60 is " low ", to The input terminal 28 of 2nd phase inverter 62 inputs " low " and makes 27 "high" of output terminal of the 2nd phase inverter 62.Moreover, anti-to the 1st The input terminal 26 of phase device 61 inputs "high" and makes the output terminal 25 " low " of the 1st phase inverter 61.In this way, being stored in storage electricity The digital signal on road 60 keeps stable state until being rewritten next time.
1st phase inverter 61 includes the 3rd transistor 33 of N-type and the 5th transistor 35 of p-type, using CMOS structure.3rd is brilliant Body pipe 33 and the 5th transistor 35 are configured in series in the 1st equipotential line (the 1st high potential line 47) and the 2nd equipotential line (low potential line 46) between.The source electrode of 3rd transistor 33 is electrically connected with the 2nd equipotential line (low potential line 46).The source electrode and the 1st of 5th transistor 35 Equipotential line (the 1st high potential line 47) electrical connection.
2nd phase inverter 62 includes the 6th transistor 36 of p-type and the 7th transistor 37 of N-type, using CMOS structure.6th is brilliant Body pipe 36 and the 7th transistor 37 are configured in series in the 1st equipotential line (the 1st high potential line 47) and the 2nd equipotential line (low potential line 46) between.The source electrode of 6th transistor 36 is electrically connected with the 1st equipotential line (the 1st high potential line 47).The source electrode of 7th transistor 37 with 2nd equipotential line (low potential line 46) electrical connection.
The output terminal 25 of 1st phase inverter 61 is the drain electrode of the 3rd transistor 33 and the 5th transistor 35.2nd phase inverter 62 Output terminal 27 is the drain electrode of the 6th transistor 36 and the 7th transistor 37.The input terminal 26 of 1st phase inverter 61 is the 3rd transistor The grid of 33 and the 5th transistor 35, is electrically connected with the output terminal 27 of the 2nd phase inverter 62.Equally, the input of the 2nd phase inverter 62 Terminal 28 is the grid of the 6th transistor 36 and the 7th transistor 37, is electrically connected with the output terminal 25 of the 1st phase inverter 61.
In addition, in the present embodiment, the 1st phase inverter 61 and the 2nd phase inverter 62 are all CMOS structures, but these phase inverters 61, it 62 can also be made of transistor and resistive element.For example, the 1st phase inverter 61 can also replace the 3rd crystal with resistive element A side in pipe 33 and the 5th transistor 35, the 2nd phase inverter 62 can also replace the 6th transistor 36 and the 7th crystal with resistive element A side in pipe 37.
Light-emitting component 20 is organic EL element in the present embodiment, (is shone comprising anode (pixel electrode) 21, illumination region Functional layer) 22 and cathode (comparative electrode) 23.Illumination region 22 from 21 side injected holes of anode and from 23 side of cathode by infusing The electronics entered forms exciton, is configured to make a part of energy become glimmering in exciton annihilation (hole and electronics in conjunction with when) Light or phosphorescence and discharge, to be shone.
In the pixel circuit 41 of embodiment 1, light-emitting component 20 is configured between the 1st transistor 31 and the 4th transistor 34. The anode 21 of light-emitting component 20 is electrically connected with the drain electrode of the 4th transistor 34, the cathode 23 of light-emitting component 20 and the 1st transistor 31 Drain electrode electrical connection.
1st transistor 31 is the driving transistor for light-emitting component 20.That is, when the 1st transistor 31 is on state, Light-emitting component 20 can shine.The output terminal 27 of 2nd phase inverter 62 of the grid and storage circuit 60 of the 1st transistor 31 is electrically connected It connects.The source electrode of 1st transistor 31 is electrically connected with the 2nd equipotential line (low potential line 46).The drain electrode of 1st transistor 31 and light-emitting component 20 (cathodes 23) electrical connection.That is, the 1st transistor 31 configuration of N-type is in the position for leaning on low potential side than light-emitting component 20.
4th transistor 34 is the luminous control transistor for controlling light-emitting component 20.It is on state in the 4th transistor 34 When, light-emitting component 20 can shine.It is described below, in the present embodiment, is used as control when supplying activation signal to control line 44 Signal processed and make the 4th transistor 34 become on state, the 2nd phase inverter 62 output terminal 27 become be equivalent to luminous current potential And when the 1st transistor 31 being made to become on state, light-emitting component 20 shines.
The grid of 4th transistor 34 is electrically connected with control line 44.(the 2nd is high with the 3rd equipotential line for the source electrode of 4th transistor 34 Equipotential line 49) electrical connection.The drain electrode of 4th transistor 34 is electrically connected with light-emitting component 20 (anode 21).That is, the 4th transistor of p-type 34 configurations are in the position for leaning on hot side than light-emitting component 20.
Here, in N-type transistor, source potential is compared with drain potential, the lower side of current potential is source electrode. Alternatively, being compared to source potential with drain potential in P-type transistor, the higher side of current potential is source electrode.N-type crystal Pipe is configured at the position that low potential side is leaned on than light-emitting component 20.On the other hand, P-type transistor is configured at than light-emitting component 20 by high The position of current potential side.By configuring N-type transistor and P-type transistor relative to light-emitting component 20 in this way, can make each Transistor is substantially linearly acted (hreinafter referred to as line movement).
The polarity of 1st transistor 31 and the 4th transistor 34 is preferably opposite.In embodiment 1, the 1st transistor 31 is N-type, 4th transistor 34 be p-type, N-type the 1st transistor 31 configuration than light-emitting component 20 lean on low potential side position, the 4th of p-type the The configuration of transistor 34 is in the position for leaning on hot side than light-emitting component 20.Therefore, the 1st transistor 31 and the 4th transistor can be made 34 carry out line movements, these the 1st transistors 31 can be made, the deviation of threshold voltage of the 4th transistor 34 will not be special to display Property (light emission luminance of light-emitting component 20) impacts.
Moreover, the source electrode of the 1st transistor 31 is electrically connected with the 2nd equipotential line (low potential line 46), the source electrode of the 4th transistor 34 It is electrically connected with the 3rd equipotential line (the 2nd high potential line 49), therefore, the source potential of the 1st transistor 31 is fixed as the 2nd current potential, and the 4th The source potential of transistor 34 is fixed as the 3rd current potential.Even if the source drain electricity of the 1st transistor 31, the 4th transistor 34 as a result, It presses smaller, is also capable of increasing the electric conductivity of the 1st transistor 31 under on state, the 4th transistor 34.As a result, the 3rd current potential (VDD2) it is applied to light-emitting component 20 with the major part of the potential difference of the 2nd current potential (VSS), therefore, is not easily susceptible to the 1st transistor 31, the influence of the deviation of the threshold voltage of the 4th transistor 34 can be improved the light-emitting component 20 between pixel 59 (sub-pixel 58) Light emission luminance uniformity.
2nd transistor 32 configuration storage circuit 60 (the 1st phase inverter 61 of input terminal 28=of the 2nd phase inverter 62 it is defeated Terminal 25 out) and signal wire 43 between.A side in the source electrode and drain electrode of 2nd transistor 32 of N-type is electrically connected with signal wire 43, Another party and storage circuit 60 (input terminal 28 of the 2nd phase inverter 62), the i.e. grid of the 6th transistor 36 and the 7th transistor 37 Pole (drain electrode of the 3rd transistor 33 and the 5th transistor 35) electrical connection.The grid of 2nd transistor 32 is electrically connected with scan line 42.
Complementary 2nd transistor 38 configuration is in (the 2nd phase inverter 62 of input terminal 26=of the 1st phase inverter 61 of storage circuit 60 Output terminal 27) and complementary signal line 45 between.A side in the source electrode and drain electrode of the 2nd transistor 38 of complementation of N-type and mutually Complement signal line 45 is electrically connected, another party and storage circuit 60 (input terminal 26 of the 1st phase inverter 61), i.e. the 3rd transistor 33 with And the 5th transistor 35 grid (drain electrode of the 6th transistor 36 and the 7th transistor 37) electrical connection.Complementary 2nd transistor 38 Grid is electrically connected with scan line 42.
The electro-optical device 10 of present embodiment has multiple complementary signal lines 45 in display area E (referring to Fig. 5).1 picture 43,1 complementary signal lines 45 of the plain signal line of circuit 41 and 1 are corresponding.To for 1 pixel circuit 41 signal wire 43 and and its Pairs of complementary signal line 45 supplies signal complimentary to one another.That is, the letter after the polarity reversion of the signal supplied to signal wire 43 Number (hereinafter referred to as reverse signal) is fed into complementary signal line 45.For example, to signal wire 43 supply "high" when, Xiang Yuqi at Pair complementary signal line 45 supply " low ".Also, when supplying " low " to signal wire 43, to the complementary signal line 45 pairs of with it Supply "high".
2nd transistor 32 and complementary 2nd transistor 38 are the selection transistors for pixel circuit 41.2nd transistor 32 Grid and the grid of complementary 2nd transistor 38 be electrically connected with scan line 42.2nd transistor 32 and complementary 2nd transistor 38 According to the scanning signal (selection signal or non-select signal) while switched conductive state and off state supplied to scan line 42.
When supplying selection signal as scanning signal to scan line 42,38 quilt of the 2nd transistor 32 and complementary 2nd transistor It selects and all becomes on state.Then, the output terminal 28 of signal wire 43 and the 2nd phase inverter 62 of storage circuit 60 is conducting State, meanwhile, the output terminal 26 of the 1st phase inverter 61 of complementary signal line 45 and storage circuit 60 is on state.
Believe as a result, from signal wire 43 via the 2nd transistor 32 to the input terminal 28 of the 2nd phase inverter 62 write-in digital picture Number.In addition, digitized map is written to the input terminal 26 of the 1st phase inverter 61 from complementary signal line 45 via complementary 2nd transistor 38 As the reverse signal (digit complement picture signal) of signal.As a result, storing data image signal sum number in storage circuit 60 Word complementary image signal.
The data image signal and digital complementary image signal for being stored in storage circuit 60 keep stable state until connecing Get off the 2nd transistor 32 and complementary 2nd transistor 38 is all become on state by selection, from signal wire 43 and complementary signal line Until 45 re-write data image signal and digital complementary image signal.
Additionally, it is preferred that determining the polarity of each transistor, size (grid length and grid width), drive condition (scanning letter Number be selection signal when current potential) etc. so that conducting resistance or 5th of the conducting resistance of the 2nd transistor 32 than the 3rd transistor 33 The conducting resistance of transistor 35 is low.Again it is preferred to polarity, size, the drive condition etc. of each transistor be determined, so that complementation the 2nd The conducting resistance of transistor 38 is lower than the conducting resistance of the 6th transistor 36 or the conducting resistance of the 7th transistor 37.Thereby, it is possible to Quickly and reliably rewrite the signal for being stored in storage circuit 60.
The electro-optical device 10 of present embodiment has multiple control lines 44 in the E of display area.Control line 44 and the 4th crystal The grid of pipe 34 is electrically connected.The 4th transistor 34 as the control transistor for light-emitting component 20 is supplied according to control line 44 Control signal (activation signal or inactive signal) the switched conductive state and off state given.
When supplying activation signal as control signal to control line 44, the 4th transistor 34 becomes on state.The 4th When transistor 34 is on state, light-emitting component 20 can shine.On the other hand, when to control line 44 supply inactive signal conduct When controlling signal, the 4th transistor 34 is off state, and light-emitting component 20 does not shine.When the 4th transistor 34 is off state, Storage circuit 60 not will do it malfunction, be able to carry out the rewriting of stored picture signal.Hereinafter, being illustrated to the point.
In the present embodiment, since control line 44 and scan line 42 are independent of one another relative to each pixel circuit 41, so, 2nd transistor 32 and the 4th transistor 34 act in the state of independently of one another.As a result, making the 2nd transistor 32 that shape be connected When state, it is necessary to the 4th transistor 34 be made to become off state.
That is, after making the 4th transistor 34 become off state, making the 2nd when picture signal is written to storage circuit 60 Transistor 32 and complementary 2nd transistor 38 become on state and supply the anti-of picture signal and picture signal to storage circuit 60 Rotaring signal.Since when the 2nd transistor 32 is on state, the 4th transistor 34 is off state, so, to storage circuit 60 During picture signal is written, light-emitting component 20 does not shine.Thereby, it is possible to accurately show the gray scale based on the time-division.
Then, when making light-emitting component 20 shine, the 2nd transistor 32 and complementary 2nd transistor 38 is made to become cut-off shape After state, the 4th transistor 34 is made to become on state.At this moment, when the 1st transistor 31 is on state, from the 3rd equipotential line (the 2nd high potential line 49) reaches the 2nd equipotential line (low potential line via the 4th transistor 34, light-emitting component 20 and the 1st transistor 31 46) path becomes on state, flows through electric current in light-emitting component 20.
Since the 2nd transistor 32 when the 4th transistor 34 is on state and complementary 2nd transistor 38 are off state, So not supplying the reverse signal of picture signal and picture signal to storage circuit 60 during making light-emitting component 20 shine. The picture signal of the storage of storage circuit 60 will not be mistakenly rewritten as a result, therefore, can be realized the high quality not shown accidentally Image is shown.
" relationship of the threshold voltage of each current potential and transistor "
As described above, in the present embodiment, low-voltage system electricity is made of the 1st current potential (VDD1) and the 2nd current potential (VSS) Source constitutes high-voltage system power supply by the 3rd current potential (VDD2) and the 2nd current potential (VSS).By adopting such structure, realizing The electro-optical device 10 of bright display is acted, can get at high speed.Hereinafter, being illustrated to the point.
In the following description, the 1st current potential is described to describe for V1, the 2nd current potential and is described for V2, the 3rd current potential as V3.At this In embodiment, 2nd current potential of the 1st current potential (as an example, V1=3.0V) relative to the voltage as low-voltage system power supply The potential difference (V1-V2=3.0V) of (as an example, V2=0V) is than the 3rd current potential (as an example, V3=7.0V) relative to conduct The potential difference (V3-V2=7.0V) of 2nd current potential (V2=0V) of the voltage of high-voltage system power supply is small (V1-V2 < V3-V2).
When setting each current potential as described above, the low-voltage system power supply using the 1st current potential of supply and the 2nd current potential makes to drive Circuit 51, storage circuit 60 are acted, and therefore, can be carried out to the transistor for constituting driving circuit 51 and storage circuit 60 micro- It refines and realizes high speed motion.On the other hand, make the member that shines using the high-voltage system power supply of the 3rd current potential of supply and the 2nd current potential Part 20 shines, and therefore, can be improved the light emission luminance of light-emitting component 20.That is, by using the structure of present embodiment, Ke Yishi Now each circuit is acted at high speed, light-emitting component 20 is with high brightness shines and can obtain the bright electro-optical device 10 shown.
In general, in the light-emitting component as organic EL element, need higher voltage (such as 5V or more) so that Light-emitting component shines.But in semiconductor devices, when improving supply voltage, it is necessary to which increasing the size of transistor, (grid is long Spend L, grid width W) to prevent malfunction, therefore, the movement of circuit is slack-off.On the other hand, when reduce supply voltage so that When circuit is acted at high speed, lead to the decline of the light emission luminance of light-emitting component.In short, making light-emitting component as in the past In luminous supply voltage structure identical with the supply voltage for making circuit operation, it is difficult to take into account the hair of the high brightness of light-emitting component The high speed motion of light and circuit.
In contrast, in the present embodiment, there is low-voltage system power supply and high-voltage system power supply to fill as electric light 10 power supply is set, if the power supply low-voltage system power supply for acting driving circuit 51, storage circuit 60.Make structure as a result, At driving circuit 51, each transistor of storage circuit 60 size be L=0.5 micron (μm) control, less than the 1st transistor 31, L=0.75 micron (μm) left and right of 4th transistor 34, with these circuits of the low voltage drive of V1-V2=3.0V, thereby, it is possible to Act driving circuit 51, storage circuit 60 at high speed.
Moreover, so that light-emitting component 20 is shone with the high voltage of V3-V2=7.0V using high-voltage system power supply, and therefore, energy Light-emitting component 20 is enough set to shine with high brightness.Also, as described later, by making the configure in series with light-emitting component 20 the 1st crystalline substance Body pipe 31, the 4th transistor 34 carry out line movement, can apply the big portion of the high voltage of V3-V2=7.0V to light-emitting component 20 Point, therefore, brightness when light-emitting component 20 shines can be further increased.
In the present embodiment, the threshold voltage (V as the 1st transistor 31 of driving transistorth1) be positive (0 < Vth1)。 When the picture signal that storage circuit 60 stores is equivalent to non-luminescent, the current potential of the output terminal 27 of storage circuit 60 be " low ", That is the 2nd current potential (V2).The source electrode of 1st transistor 31 is connect with the 2nd equipotential line (low potential line 46), therefore, the 1st transistor 31 Source potential and grid potential are the 2nd current potential (V2), therefore, the gate-source voltage V of the 1st transistor 31gs1For 0V.
Therefore, as the threshold voltage V of the 1st transistor 31th1(as an example, Vth1=0.36V) be positive (0 < Vth1) when, N-type The 1st transistor 31 gate-source voltage Vgs1Less than threshold voltage Vth1, therefore, the 1st transistor 31 is off state.By This can make the 1st transistor 31 reliably become off state when picture signal does not shine.
Moreover, in the present embodiment, it is brilliant that the potential difference of the 1st current potential (V1) on the basis of the 2nd current potential (V2) is greater than the 1st The threshold voltage V of body pipe 31th1(Vth1<V1-V2).When the picture signal that storage circuit 60 stores is equivalent to luminous, storage electricity The current potential of the output terminal 27 on road 60 is "high"."high" is the 1st current potential (V1), therefore, the gate-source voltage of the 1st transistor 31 Vgs1Potential difference (V as the 1st current potential (V1) relative to the 2nd current potential (V2)gs1=V1-V2=3.0V-0V=3.0V).
When the 1st current potential (V1) is greater than the 1st transistor 31 relative to the potential difference (V1-V2=3.0V) of the 2nd current potential (V2) Threshold voltage Vth1(Vth1=0.36V) (Vth1< V1-V2) when, when the current potential of the output terminal 27 of storage circuit 60 is "high", N The gate-source voltage V of 1st transistor 31 of typegs1Greater than threshold voltage Vth1, therefore, the 1st transistor 31 becomes on state. Therefore, in image signal luminescence, the 1st transistor 31 can be made reliably to become on state.
When supplying inactive signal as control signal from the control line 44 being electrically connected with grid, as control transistor The 4th transistor 34 become off state, when supply activation signal, the 4th transistor 34 as control transistor is as leading Logical state.In present embodiment (embodiment 1), the 4th transistor 34 is p-type, therefore, as described above, inactive signal is set For high potential more than 3rd current potential (V3), preferably the 3rd current potential (V3).In addition, activation signal is set as V3- (V1-V2) below Low potential, preferably the 2nd current potential (V2).
When supplying the inactive signal of the 3rd current potential (V3) from control line 44 to the grid of the 4th transistor 34, the 4th crystal The source potential and grid potential of pipe 34 become the 3rd current potential (V3), therefore, the gate-source voltage V of the 4th transistor 34gs4For 0V.As the threshold voltage V of the 4th transistor 34 using p-typeth4(as an example, Vth4=-0.36V) when, the 4th transistor 34 Gate-source voltage Vgs4Greater than threshold voltage Vth4, therefore, the 4th transistor 34 becomes off state.Therefore, it is in control signal When inactive signal, the 4th transistor 34 can be made reliably to become off state.
When from control line 44 supply V3- (V1-V2) below, i.e. the activation of 7.0V- (3.0V-0V)=4.0V current potential below When signal, the gate-source voltage V of the 4th transistor 34gs4As 4.0-7.0V=-3.0V or less.Therefore, the 4th transistor 34 Gate-source voltage Vgs4Sufficiently smaller than threshold voltage Vth4, therefore, when controlling signal is activation signal, the 4th crystal can be made Pipe 34 reliably becomes on state.
Moreover, more reducing the current potential of activation signal, the gate-source voltage V of the 4th transistor 34gs4More increase.If set sharp The current potential of signal living is the 2nd current potential (V2), then the gate-source voltage V of the 4th transistor 34gs4As 0V-7.0V=-7.0V, lead The conducting resistance decline of the 4th transistor 34 under logical state, therefore, when making light-emitting component 20 shine, is not easily susceptible to the 4th crystal The influence of the deviation of the threshold voltage of pipe 34.
By set highest 3rd current potential (V3) in existing 3 current potentials (the 1st current potential, the 2nd current potential and the 3rd current potential) as The current potential of inactive signal, the current potential that the 2nd minimum current potential (V2) is activation signal, can be not provided with new current potential (current potential Line) in the case where set inactive signal and activation signal current potential.Moreover, can fully increase the 4th using activation signal Therefore the absolute value of the gate-source voltage of transistor 34 can fully reduce leading for the 4th transistor 34 under on state Be powered resistance, and the deviation that can substantially eliminate the threshold voltage of the 4th transistor 34 influences the light emission luminance bring of light-emitting component.
That is, by using the structure of present embodiment, even if using low-voltage system power supply and high-voltage system power supply Two kinds of electrical systems also can make the 1st transistor 31 and the 4th transistor 34 become cut-off when light-emitting component 20 should be made not shine State and so that it is not shone, become the 1st transistor 31 and the 4th transistor 34 when light-emitting component 20 should be made to shine and lead Lead to state and it is reliably made to shine.
In addition, when supplying non-select signal as scanning signal from the scan line 42 being electrically connected with grid, it is alternatively that brilliant 2nd transistor 32 of body pipe become off state, when supplying selection signal, it is alternatively that the 2nd transistor 32 of transistor at For on state.In the present embodiment, the 2nd transistor 32 is N-type, therefore, as described above, non-select signal is set as the 2nd Current potential (V2) low potential below, preferably the 2nd current potential (V2).In addition, selection signal is set as the height of the 1st current potential (V1) or more Current potential, preferably the 3rd current potential (V3).
Preferably, the 1st transistor 31 is identical with the polarity of the 2nd transistor 32.In the 1st embodiment, the 1st transistor 31 and the 2nd transistor 32 is N-type.Therefore, when the current potential of the picture signal supplied to grid is "high", the 1st transistor 31 As on state, when the scanning signal supplied to grid is selection signal ("high"), the 2nd transistor 32 becomes conducting shape State.The "high" of picture signal is the 1st current potential (V1), and selection signal ("high") is set as the 1st current potential (V1) or more, the preferably the 3rd Current potential (V3).
The current potential for setting selection signal is rewritten as the 3rd current potential (V3), by the picture signal of storage circuit 60 from " low " The case where "high", is illustrated.Before rewriting picture signal, be electrically connected with a side of the source drain of the 2nd transistor 32 The input terminal 28 (output terminal 25 of the=the 1 phase inverter 61) of 2 phase inverters 62 is the 2nd current potential (V2) of " low ".When from scanning When line 42 supplies the selection signal of the 3rd current potential (V3) to the grid of the 2nd transistor 32, the gate-source voltage of the 2nd transistor 32 Vgs2For V3-V2=7.0V-0V=7.0V, higher than the threshold voltage V of the 2nd transistor 32th2(as an example, Vth2=0.36V), Therefore, the 2nd transistor 32 becomes on state.
Pass through the output end by the picture signal of "high" (V1) from the 60, the 1st phase inverter 61 of 43 write storage circuit of signal wire The current potential of son 25 gradually rises up to "high" (V1) from " low " (V2), but is accompanied by this, the gate-source voltage of the 2nd transistor 32 Vgs2Gradually decrease down V3-V1=7.0V-3.0V=4.0V.Even if the gate-source voltage V of the 2nd transistor 32gs2As minimum 4.0V, gate-source voltage Vgs2Also sufficiently above the threshold voltage V of the 2nd transistor 32th2.Therefore, until by picture signal Until write storage circuit 60, the lower state of conducting resistance of the 2nd transistor 32 is maintained, it therefore, can by picture signal By ground write storage circuit 60.
Here, imaginary 2nd transistor 32 is and the p-type (being set as the 2nd transistor 32A) of 31 opposite characteristic of the 1st transistor Situation.In this case, when selection signal is " low ", the 2nd transistor 32A becomes on state.In the electricity for setting selection signal In the case that position is the 2nd current potential (V2), the picture signal of storage circuit 60 is rewritten as " low " from "high", supplied when from scan line 42 To the 2nd current potential (V2) selection signal when, the gate-source voltage V of the 2nd transistor 32Ags2For V2-V1=0V-3.0V=- 3.0V, lower than the threshold voltage V of the 2nd transistor 32Ath2(as an example, Vth2=-0.36V), therefore, the 2nd transistor 32A at For on state.
By by the picture signal of " low " (V2) from 43 write storage circuit 60 of signal wire, with the defeated of the 2nd phase inverter 62 The current potential for entering terminal 28 is gradually reduced from "high" (V1), the gate-source voltage V of the 2nd transistor 32Ags2From -3.0V gradually on It rises, before the current potential of input terminal 28 becomes the 2nd current potential (V2), reaches the threshold voltage V of the 2nd transistor 32A of p-typeth2, 2nd transistor 32A becomes off state.
In addition, before the 2nd transistor 32A becomes off state, with gate-source voltage Vgs2Rise and close to threshold value Voltage Vth2, the conducting resistance of the 2nd transistor 32A rises, therefore, is spent to the rewriting of the picture signal of storage circuit 60 time, Or rewrite failure.It is more low potential by the potential setting of selection signal in order to avoid the problem, but in this case, Also need the equipotential line different from existing current potential.
As the 1st embodiment, when the 1st transistor 31 and the 2nd transistor 32 are the identical polar of N-type, pass through Make highest 3rd current potential between the 3rd current potential of current potential of selection signal and the 1st current potential, new equipotential line can be not provided with In the case where set.Moreover, make 32 on state of the 2nd transistor and when picture signal is written to storage circuit 60, can Increase the gate-source voltage V of the 2nd transistor 32gs2, therefore, though source potential due to picture signal write-in and rise, Can the conducting resistance of the 2nd transistor 32 be maintained lower.Thereby, it is possible to high speed and reliably carry out to storage circuit 60 The write-in of picture signal is rewritten.
According to the above results, preferred each current potential (V1, V2, V3) in present embodiment and the 1st transistor 31 are summarized Threshold voltage (Vth1) relationship, their relationship formula 2 and formula 3 indicate.
0<Vth1…(2)
V2+Vth1 < V1 < V3 ... (3)
" characteristic of transistor "
Next, being illustrated to the characteristic for the transistor that the electro-optical device 10 of present embodiment has.In this embodiment party It is (low with the 2nd equipotential line in the 3rd equipotential line (the 2nd high potential line 49) for constituting high-voltage system power supply in the electro-optical device 10 of formula Equipotential line 46) between, it is configured with the 1st transistor 31 and the 4th transistor 34 in series with light-emitting component 20.1st transistor 31 Conducting resistance is preferably sufficiently below the conducting resistance of light-emitting component 20.Also, the conducting resistance of the 4th transistor 34 is it is also preferred that sufficiently Lower than the conducting resistance of light-emitting component 20.
Substantially low is that the 1st transistor 31, the 4th transistor 34 carry out the drive condition of line movement, specifically, indicating the 1 transistor 31, the 4th transistor 34 conducting resistance be light-emitting component 20 conducting resistance 1/100 or less, preferably 1/1000 Below.As a result, when light-emitting component 20 shines, the 1st transistor 31, the 4th transistor 34 can be made to carry out line movement.
As a result, the current potential generated in the 1st transistor 31, the 4th transistor 34 and the light-emitting component 20 configured in series The major part of poor (in short, potential difference of the 3rd current potential and the 2nd current potential of the voltage as high-voltage system power supply) is applied to luminous Therefore element 20 when light-emitting component 20 shines, is not easily susceptible to the influence of the deviation of the threshold voltage of two transistors 31,34. That is, when using such structure, can reduce the 1st transistor 31, the 4th transistor 34 threshold voltage deviation influence, Therefore, the offset of the deviation, gray scale that inhibit the brightness between pixel 59 (sub-pixel 58) and excellent in uniformity be can be realized Image show.
This is because the electric conduction of the conducting resistance light-emitting component 20 by making the 1st transistor 31, the 4th transistor 34 Hereinafter, light-emitting component 20 receives 99% or more of supply voltage, the potential difference in two transistors 31,34 is 1% for the 1/100 of resistance Below.Potential difference in two transistors 31,34 is small to 1% hereinafter, therefore, the threshold voltage of two transistors 31,34 it is inclined Difference becomes smaller on the influence of the characteristics of luminescence bring of light-emitting component 20.
In present embodiment (embodiment 1), the series resistance of the 1st transistor 31 and the 4th transistor 34 becomes the member that shines 1/1000 or so of the conducting resistance of part 20.In this case, 99.9% or so of the reception of light-emitting component 20 supply voltage, two Potential difference in transistor 31,34 is 0.1% or so, therefore, can almost ignore the threshold voltage of two transistors 31,34 Deviation influences the characteristics of luminescence bring of light-emitting component 20.
The conducting resistance of transistor relies on the polarity of transistor, grid length, grid width, threshold voltage, gate insulator Film thickness etc..In the present embodiment, polarity, the grid length, grid width, threshold voltage, grid of two transistors 31,34 are determined Insulate film thickness etc. for pole, so that the conducting resistance of the 1st transistor 31 and the 4th transistor 34 is sufficiently below the electric conduction of light-emitting component 20 Resistance.Hereinafter, illustrating the point.
In the present embodiment, light-emitting component 20 uses organic EL element, the crystal such as the 1st transistor 31, the 4th transistor 34 Pipe is formed on the device substrate 11 being made of monocrystalline silicon substrate.The voltage-current characteristic of light-emitting component 20 is substantially by formula below 4 indicate.
In formula 4, IELFor by the electric current of light-emitting component 20, VELIt is applied to the voltage of light-emitting component 20, LELIt is luminous The length when vertical view of element 20, WELWidth when being the vertical view of light-emitting component 20, J0For the current density system of light-emitting component 20 Number, VtmIt is the coefficient voltages (constant voltage at a constant temperature) with temperature dependency that light-emitting component 20 has, V0It is For the luminous threshold voltage of light-emitting component 20.
In addition, with VPIt indicates the voltage of high-voltage system power supply, use VdsIt indicates by the 1st transistor 31 and the 3rd transistor When the potential difference of 33 generations, VEL+Vds=VP.Also, in the present embodiment, LEL=11 microns (μm), WEL=3 microns (μm), J0=1.449 milliamperes of (mA/cm every square centimeter2), V0=3.0 volts (V), Vtm=0.541 volt (V).
On the other hand, when the 1st transistor 31, the 4th transistor 34 etc. are expressed as the i-th transistor (i is 1 or 4), Drain current IdsiIt is indicated by formula 5 below.
In formula 5, WiFor the grid width of the i-th transistor, LiFor the grid length of the i-th transistor, ε0For the dielectric of vacuum Constant, εoxFor the dielectric constant of gate insulating film, toxiFor the thickness of gate insulating film, μiFor the mobility of the i-th transistor, Vgsi For grid voltage, VdsiFor the drain voltage based on potential difference caused by the i-th transistor, VthiFor the threshold voltage of the i-th transistor.
In embodiment 1, W1=1.0 microns (μm), W4=1.25 microns (μm), L1=L4=0.75 micron (μm), tox= 20 nanometers (nm), μ1=240 centimeter squared per volt second (cm2/ Vs), μ4=150 centimeter squared per volt second (cm2/ Vs), Vth1 =0.36V, Vth4=-0.36V, Vgs1=V1-V2=3.0V, Vgs4=V2-V3=-7V.
In addition, using two transistors in the case where making the 1st transistor 31 and the 4th transistor 34 carries out line movement 31, the potential difference V in 34ds, the voltage-current characteristic of light-emitting component 20 is in Vds=0V is approximately nearby formula 6 below.
IEL=-kVds+I0…(6)
It in embodiment 1, is k=1.39 × 10 by the coefficient k that formula 6 defines-6(Ω-1)。I0It is high-voltage system power supply Voltage VPAll it is applied to the magnitude of current in the case where light-emitting component 20, I0=7.82 × 10-7(A)。
In such a situa-tion, it is I that the luminous voltage of light-emitting component 20, which is according to formula 4 and formula 6,EL=IdsVoltage.At this In embodiment, VP=V3-V2=7V, Vds1=0.0053V, Vds4=0.0027V, VEL=6.9920V, IEL=Ids1=Ids4= 7.672×10-7A.Also, the conducting resistance of transistor at this time is 6.859 × 103The conducting resistance of Ω, the 4th transistor 34 is 3.491×103Ω, the conducting resistance of light-emitting component 20 are 9.113 × 106Ω。
Therefore, the conducting resistance of the 1st transistor 31 is 1/1000 low 1/1300 of the conducting resistance than light-emitting component 20 Left and right, the conducting resistance of the 4th transistor 34 is 1/1000 low 1/2600 or so of the conducting resistance than light-emitting component 20, because This, can be applied to light-emitting component 20 for the major part of the voltage of high-voltage system power supply.
Under this condition, even if the threshold voltage of transistor, which varies by 30% or more, (in embodiment 1, makes Vth1、Vth4? 0.29 changes between 0.53V), VEL=6.99V, IEL=Ids1=Ids4=7.67 × 10-7A is also constant.In general, crystal The threshold voltage of pipe will not significantly change in this way.Therefore, by making the conducting resistance light-emitting component 20 of the 4th transistor 34 1/1000 or so of conducting resistance is hereinafter, the deviation of the threshold voltage of the 1st transistor 31 and the 4th transistor 34 will not be substantially The light emission luminance of light-emitting component 20 is affected.
Approximatively, by 6 simultaneous of formula 5 and formula, make IEL=Idsi, so as to indicate the i-th crystalline substance as formula 7 below The deviation of the threshold voltage of body pipe is for electric current IEL=IdsiInfluence.
I0For the voltage V of high-voltage system power supplyPIt is all applied to the magnitude of current in the case where light-emitting component 20, so, from Formula 7 is it is found that make light-emitting component 20 in supply voltage VPIt nearby shines, as long as increasing Vgsi、Zi?.In other words, more increase Zi, the luminous intensity of light-emitting component 20 is more not easily susceptible to the influence of the deviation of the threshold voltage of transistor.
In embodiment 1, due to being small enough to k/Z1=2.52 × 10-2V、k/Z4=3.22 × 10-2The value of V, so, formula 7 The 2nd, the left side relative to the 1st transistor 31 be k/ (Z1(Vgs1-Vth1))=0.01, it is k/ (Z relative to the 4th transistor 344 (Vgs4-Vth4))=0.005, less than 0.01 (1%) left and right.As a result, the electric current (light emission luminance) when light-emitting component 20 shines is several The influence of the threshold voltage of two transistors 31,34 is not will receive.That is, by making k/ (Zi(Vgsi-Vthi)) value be less than 0.01 (1%) left and right, can substantially exclude the threshold voltage (V of two transistors 31,34th1、Vth4) relative to light-emitting component The deviation of 20 light emission luminance.
In formula 7, k and ZiIt is defined by formula 5 and formula 6.In addition, the mobility [mu] of P-type transistoriLess than N-type transistor, because This, making the W of P-type transistor (is in the present embodiment W3) be greater than N-type transistor W (be in the present embodiment W1), make P The Z of 4th transistor 34 of type4With the Z of the 1st transistor 31 of N-type1It is roughly the same.
In order to make light-emitting component 20 in supply voltage VPNearby shine, grid voltage VgsiIt is preferred that as big as possible.In this implementation In mode (embodiment 1), by making the current potential of the control signal (activation signal) under state of activation relative to as the 4th transistor 3rd current potential (V3) of 34 source potential becomes the 2nd current potential (V2), increases the gate-source voltage V of the 4th transistor 34gs4。
In addition, in the 1st equipotential line for constituting low-voltage system power supply, (the 1st is high in the electro-optical device 10 of present embodiment Equipotential line 47) and the 2nd equipotential line (low potential line 46) between configured with constituting the 1st phase inverter 61 that is included of storage circuit 60 3rd transistor 33 and the 5th transistor 35 and the 6th transistor 36 and the 7th transistor 37 for constituting the 2nd phase inverter 62.
These transistors 33,35,36,37 and the 1st transistor the 31, the 4th acted using high-voltage system power supply are brilliant Body pipe 34 is compared, and the magnitude of current flowed through is less, therefore, can reduce the area of channel formation region.That is, can be to storage circuit 60 are miniaturize.Moreover, transistor capacitance becomes when the area of the channel formation region of transistor 33,35,36,37 is smaller It is small, therefore, charge and discharge can be carried out at high speed.That is, the write-in of the picture signal to storage circuit 60 can be made, rewrite high speed Change.
In the present embodiment, these the 3rd transistors 33, the 5th transistor 35, the 6th transistor that storage circuit 60 includes The grid length when vertical view of the 36 and the 7th transistor 37 is more brilliant than the 1st transistor the 31 and the 4th configured in series with light-emitting component 20 The grid length when vertical view of body pipe 34 is short.
3rd transistor 33, the 5th transistor 35, the 6th transistor 36 and the 7th transistor 37 vertical view when grid length be L3=L5=L6=L7=0.5 micron (μm).As described above, the grid when vertical view of the 1st transistor 31 and the 4th transistor 34 is long Degree is L1=L4=0.75 micron (μm), therefore, the 3rd transistor 33, the 5th transistor 35, the 6th transistor 36 and the 7th transistor 37 Grid length it is shorter.
In addition, in the present embodiment, the 3rd transistor 33, the 5th transistor 35, the 6th transistor 36 and the 7th transistor 37 Vertical view when channel formation region the 1st transistor 31 of area ratio and the 4th transistor 34 vertical view when channel formation region Area it is small.The area of the gate electrode of the area and relative configuration of the channel formation region of transistor, i.e., overlook when grid Length and the product of grid width are roughly equal.
3rd transistor 33 of N-type and the grid width of the 7th transistor 37 are W3=W7=0.5 micron (μm), the 5th of p-type the The grid width of transistor 35 and the 6th transistor 36 is W5=W6=0.75 micron (μm).Therefore, the 3rd transistor the 33 and the 7th is brilliant The area of the channel formation region of body pipe 37 be the every square micron of 0.5 × 0.5=0.25 (μm2), the 5th transistor the 35 and the 6th is brilliant The area of the channel formation region of body pipe 36 be the every square micron of 0.5 × 0.75=0.375 (μm2)。
As described above, the grid width of the 1st transistor 31 is W1=1.0 microns (μm), therefore, the ditch of the 1st transistor 31 The area of road forming region be the every square micron of 0.75 × 1.0=0.75 (μm2).In addition, the grid width of the 4th transistor 34 is W4=1.25 microns (μm), therefore, the area of the channel formation region of the 4th transistor 34 is that 0.75 × 1.25=0.9375 is often put down Square micron (μm2).Therefore, the channel formation region of the 3rd transistor 33, the 5th transistor 35, the 6th transistor 36 and the 7th transistor 37 The area in domain is smaller.
In this way, in the present embodiment, passing through the channel shape for the transistor 33,35,36,37 for making storage circuit 60 be included It is less than the area of the channel formation region of the transistor 31,34 configured in series with light-emitting component 20 at the area in region, it can Storage circuit 60 is miniaturize and carries out high speed motion, also, light-emitting component 20 is made to shine with high brightness.
" driving method of pixel circuit "
Then, referring to Fig. 9, the driving method of the pixel circuit in the electro-optical device 10 of present embodiment is illustrated. Fig. 9 is the figure for illustrating the driving method of pixel circuit of present embodiment.In Fig. 9, horizontal axis is time shaft, during having the 1st During (non-display period) and the 2nd (during display).P1 shown in Fig. 7 (P1-1~P1-6) is equivalent to during 1st.During 2nd It is equivalent to P2 shown in Fig. 7 (P2-1~P2-6).
In the longitudinal axis of Fig. 9,1~Scan of Scan M indicate in M articles of scan line 42 (referring to Fig. 5) from the 1st to M The scanning signal that capable each scan line 42 supplies.Scanning signal has scanning signal (selection signal) He Feixuan under selection state Select the scanning signal (non-select signal) under state.In addition, Enb indicates the control signal to control line 44 (referring to Fig. 5) supply. It controls signal and includes control signal (the inactive letter under the control signal (activation signal) and unactivated state under state of activation Number).
As referring to illustrated by Fig. 7, it will show that 1 (F) of an image is divided into multiple subfields (SF), in each son After terminating in field (SF) comprising the 1st period (non-display period) and the 1st period during the 2nd of beginning (during display).1st phase Between (non-display period) be signal address period, to each pixel circuit 41 (referring to Fig. 5) positioned at display area E within this period Storage circuit 60 (referring to Fig. 8) write-in picture signal.(during display) is in each pixel for being located at display area E during 2nd During light-emitting component 20 (referring to Fig. 8) can shine in circuit 41.
As shown in figure 9, in the electro-optical device 10 of present embodiment, during the 1st (non-display period) to whole controls Line 44 supplies inactive signal as control signal.When supplying inactive signal to control line 44, due to the 4th transistor 34 (referring to Fig. 8) becomes off state, so, light-emitting component 20 is not send out in whole pixel circuits 41 positioned at display area E The state of light.
Moreover, in each subfield (SF), making to the arbitrary scan line of scan line 42 supply selection signal during the 1st For scanning signal.When supplying selection signal to scan line 42, the 2nd transistor 32 and complementation in selected pixel circuit 41 2nd transistor 38 becomes on state (referring to Fig. 8).As a result, in selected pixel circuit 41, from signal wire 43 and complementation Picture signal is written to storage circuit 60 in signal wire 45 (referring to Fig. 8).In this way, depositing to each pixel circuit 41 in during the 1st Storage road 60 is written picture signal and is stored.
Control signal is used as to whole control lines 44 supply activation signal in (during display) during the 2nd.When to control When line 44 supplies activation signal, since the 4th transistor 34 is on state, so, in whole pixels electricity positioned at display area E Light-emitting component 20 is the state that can be shone in road 41.Become the 2nd transistor 32 to the supply of whole scan lines 42 in during the 2nd The non-select signal of off state is as scanning signal.As a result, in the storage circuit 60 of each pixel circuit 41, in the subfield (SF) picture signal being written in is kept.
In this way, in the present embodiment, due to can be to (non-display period) and the 2nd period during the 1st (during display) It is independently controlled, thus it is possible to shown based on the gray scale that digital time-division drives.In addition, as a result, it is possible to make for the 2nd phase Between it is shorter than during the 1st, therefore, can be realized the display of higher gray scale.
Further, it is possible to share the control signal supplied to control line 44, therefore, electro-optical device in multiple pixel circuits 41 10 driving becomes easy.Specifically, in the case where not having the digital drive of the 1st period, to make ratio during shining It is short during having selected one of all scan lines 42 vertical, need extremely complex driving.In contrast, in present embodiment In, due to sharing the control signal supplied to control line 44 in multiple pixel circuits 41, so, even if there is the period ratio that shines Short subfield (SF) during having selected one of all scan lines 42 vertical, only by just can during merely shortening the 2nd Easily electro-optical device 10 is driven.
As described above, the structure of pixel circuit 41 according to the present embodiment, may be implemented to show with low-power consumption high The image of the high quality of resolution ratio and more gray scales simultaneously carries out to higher speed acting the electro-optical device that can get brighter display 10。
Hereinafter, the variation of the structure of the pixel circuit of the 1st embodiment of explanation.In the explanation of variation below, Difference from embodiment 1 or above-mentioned variation is illustrated, composition identical with embodiment 1 or above-mentioned variation is wanted Element assigns identical label on attached drawing and the description thereof will be omitted.In addition, the driving method of above-mentioned pixel circuit and 1 phase of embodiment Together, in the structure of variation below, effect same as Example 1 can also be obtained.
(variation 1)
" structure of pixel circuit "
Firstly, being illustrated to the pixel circuit of the variation 1 of the 1st embodiment.Figure 10 is the pixel for illustrating variation 1 The figure of the structure of circuit.As shown in Figure 10, the difference of the pixel circuit 41 of the pixel circuit 41A and embodiment 1 of variation 1 It is, the 4th transistor 34A is the transistor of N-type and configures the other structures phase between light-emitting component 20 and the 1st transistor 31 Together.
The pixel circuit 41A of variation 1 include light-emitting component 20, the 4th transistor 34A of N-type, N-type the 1st transistor 31, storage circuit 60, the 2nd transistor 32 of N-type and N-type the 2nd transistor 38 of complementation.The anode 21 and the 3rd of light-emitting component 20 Equipotential line (the 2nd high potential line 49) electrical connection, the cathode 23 of light-emitting component 20 are electrically connected with the drain electrode of the 4th transistor 34A.
The source electrode of 4th transistor 34A is electrically connected with the drain electrode of the 1st transistor 31.The source electrode of 1st transistor 31 and the 2nd electricity Bit line (low potential line 46) electrical connection.Therefore, in the pixel circuit 41A of variation 1, low potential side is being leaned on than light-emitting component 20 Position at be configured with the 4th transistor 34A of N-type, at than position of the 4th transistor 34A by low potential side configured with N-type 1st transistor 31.
In variation 1, the 4th transistor 34A is N-type, and therefore, inactive signal is set to than the 4th transistor 34A's The low current potential of source potential, preferably the 2nd current potential (V2).Alternatively, activation signal is set to the source electrode than the 4th transistor 34A The high current potential of current potential, preferably the 3rd current potential (V3).
The 1st transistor 31 is configured between the 4th transistor 34A and the 2nd equipotential line (low potential line 46).Therefore, the 1st Transistor 31 is on state and makes the 4th transistor 34A when being also on state, and the source potential of the 4th transistor 34A is slightly high In the 2nd current potential (V2).But the source potential of the 1st transistor 31 is fixed as the 2nd current potential (V2), can make the 1st transistor 31 into Therefore row line movement can make the source potential of the 4th transistor 34A and the 2nd current potential (V2) roughly equal.
When supplying the inactive signal of the 2nd current potential (V2) from control line 44 to the 4th transistor 34A, the 4th transistor 34A Gate-source voltage Vgs4Substantially 0V.As the threshold voltage V of the 4th transistor 34A using N-typeth4(as an example, Vth4= When 0.36V), the gate-source voltage V of the 4th transistor 34gs4Than threshold voltage Vth4Small, therefore, the 4th transistor 34A, which becomes, to be cut Only state.Therefore, when controlling signal is inactive signal, the 4th transistor 34A off state can reliably be made.
When supplying the activation signal of the 3rd current potential (V3) from control line 44, the gate-source voltage V of the 4th transistor 34Ags4 It is roughly equal relative to the potential difference (V3-V2=7.0V-0V=7.0V) of the 2nd current potential (V2) with the 3rd current potential (V3).Therefore, the 4th The gate-source voltage V of transistor 34Ags4Sufficiently above threshold voltage Vth4, therefore, when controlling signal is activation signal, energy It is enough reliably to make the 4th transistor 34A on state and carry out line movement.
When the 1st transistor 31 and the 4th transistor 34A become on state, from the 3rd equipotential line (the 2nd high potential line 49) Become via the path that light-emitting component 20, the 4th transistor 34A and the 1st transistor 31 reach the 2nd equipotential line (low potential line 46) and leads Logical state, flows through electric current in light-emitting component 20.Moreover, the 1st transistor 31 and can be made when making light-emitting component 20 shine 4 transistor 34A carry out line movement, therefore, be not easily susceptible to two transistors 31,34A threshold voltage deviation influence.This Outside, as a result, in the pixel circuit 41A of variation 1, since the high voltage of V3-V2=7.0V can be applied to light-emitting component 20 Major part therefore can be improved brightness when light-emitting component 20 shines.
(variation 2)
Next, being illustrated to the pixel circuit of the variation 2 of the 1st embodiment.Figure 11 is the picture for illustrating variation 2 The figure of the structure of plain circuit.As shown in figure 11, the difference of the pixel circuit 41A of the pixel circuit 41B and variation 1 of variation 2 Place is that by the configuration of the 1st transistor 31 between light-emitting component 20 and the 4th transistor 34A, other structures are identical.
The pixel circuit 41B of variation 2 include light-emitting component 20, the 1st transistor 31 of N-type, N-type the 4th transistor 34A, storage circuit 60, the 2nd transistor 32 of N-type and N-type the 2nd transistor 38 of complementation.The anode 21 and the 3rd of light-emitting component 20 Equipotential line (the 2nd high potential line 49) electrical connection, the cathode 23 of light-emitting component 20 are electrically connected with the drain electrode of the 1st transistor 31.
The source electrode of 1st transistor 31 is electrically connected with the drain electrode of the 4th transistor 34A.The source electrode of 4th transistor 34A and the 2nd electricity Bit line (low potential line 46) electrical connection.Therefore, in the pixel circuit 41B of variation 2, low potential side is being leaned on than light-emitting component 20 Position at be configured with the 1st transistor 31 of N-type, at than position of the 1st transistor 31 by low potential side configured with N-type the 4 transistor 34A.
In variation 2, the source electrode of the 4th transistor 34A is electrically connected with the 2nd equipotential line (low potential line 46), therefore, works as hair When optical element 20 shines, i.e., to control line 44 supply the 3rd current potential (V3) activation signal when, the gate source of the 4th transistor 34A Pole tension VgsPotential difference (the V on the basis of the 2nd current potential (V2) as the 3rd current potential (V3)gs4=V3-V2=7.0V).Therefore, The 4th transistor 34A on state can reliably be made and carry out line movement.
In variation 2, the 4th transistor is configured between the 1st transistor 31 and the 2nd equipotential line (low potential line 46) 34A, therefore, when the 4th transistor 34A becomes on state and the 1st transistor 31 is made also to become on state, the 1st transistor 31 source potential is higher than the 2nd current potential (V2).But the source potential of the 4th transistor 34A is fixed as the 2nd current potential (V2), it can The 4th transistor 34A is set to carry out line movement, therefore, the source potential that can make the 1st transistor 31 and the 2nd current potential (V2) are substantially It is equal.
Therefore, when the current potential of the output terminal 27 of storage circuit 60 is "high" (the 1st current potential), the grid of the 1st transistor 31 Pole source voltage Vgs1It is roughly equal relative to the potential difference (V1-V2=3.0V) of the 2nd current potential (V2) with the 1st current potential (V1), it is greater than Threshold voltage (the V of 1st transistor 31th1=0.36V), therefore, can reliably make 31 on state of the 1st transistor and into Row line movement.
In the pixel circuit 41B of variation 2, when making light-emitting component 20 shine, the 1st transistor 31 and the 4th can be made Transistor 34A carry out line movement, therefore, be not easily susceptible to two transistors 31,34A threshold voltage deviation influence.This Outside, as a result, due to can to light-emitting component 20 apply V3-V2=7.0V high voltage major part, can be improved luminous Brightness when element 20 shines.
(variation 3)
Next, being illustrated to the pixel circuit of the variation 3 of the 1st embodiment.Figure 12 is the picture for illustrating variation 3 The figure of the structure of plain circuit.As shown in figure 12, the pixel circuit 41C Yu above-described embodiment 1 of variation 3 and the difference of variation Place is do not have the 4th transistor 34 (or the 4th transistor 34A), other structures are identical.
The pixel circuit 41C of variation 3 includes light-emitting component 20, the 1st transistor 31 of N-type, storage circuit 60, N-type The 2nd transistor 38 of complementation of 2nd transistor 32 and N-type.The anode 21 of light-emitting component 20 and the 3rd equipotential line (the 2nd high potential line 49) it is electrically connected, the cathode 23 of light-emitting component 20 is electrically connected with the drain electrode of the 1st transistor 31.The source electrode and the 2nd of 1st transistor 31 Equipotential line (low potential line 46) electrical connection.
In the pixel circuit 41C of variation 3, in the 3rd equipotential line (the 2nd high potential line 49) and the 2nd equipotential line (low potential Line 46) between in series be configured with light-emitting component 20 and the 1st transistor 31.It is in the current potential of the output terminal 27 of storage circuit 60 "high" (the 1st current potential) and make the 1st transistor 31 become on state when, light-emitting component 20 shine.When light-emitting component 20 shines, The source potential of 1st transistor 31 is fixed as the 2nd current potential (V2), the 1st transistor 31 can be made to carry out line movement, therefore, no The influence of the deviation of threshold voltage vulnerable to the 1st transistor 31.Thereby, it is possible to apply V3-V2=7.0V to light-emitting component 20 The major part of high voltage therefore can be improved brightness when light-emitting component 20 shines.
In addition, the quantity of wiring therefore can be reduced without control line 44 in the pixel circuit 41C of variation 3, because This, can also reduce the quantity of wiring layer.In general, forming each cloth across interlayer insulating film when the quantity of wiring layer is more Line layer, accordingly, it is possible to lead to the reduction of the increase of the manufacturing effort of electro-optical device (device substrate), manufacturing yield.According to change The structure of shape example 3 is also able to carry out the image based on digital drive and shows even if the negligible amounts of wiring layer.Therefore, with it is above-mentioned Embodiment 1, variation are compared, and can be realized the reduction of manufacturing effort, the raising of fabrication yield.In addition, having light-proofness Wiring quantity reduce, thereby, it is possible to reduce lightproof area, can be realized high resolution (miniaturization of pixel).
(the 2nd embodiment)
Then, the structure of the electro-optical device of the 2nd embodiment is illustrated.The electro-optical device and the 1st of 2nd embodiment The electro-optical device 10 of embodiment the difference is that, the 1st transistor and the 2nd transistor are p-type, and the 2nd current potential (V2) is higher than 1st current potential (V1) and the 3rd current potential (V3).Be accompanied by this, the structure of the pixel circuit of the 2nd embodiment also with the 1st embodiment Pixel circuit structure it is different.Figure 13 is the circuit block diagram of the electro-optical device of the 2nd embodiment of the invention.Figure 14 is explanation The figure of the structure of the pixel of 2nd embodiment of the invention.As shown in Figure 13 and Figure 14, in the electro-optical device of present embodiment 10 In, the 1st low potential VSS1, the 2nd low potential VSS2 and high potential VDD, the 1st low potential VSS1, the 2nd low electricity are supplied to driving portion 50 Position VSS2 and high potential VDD is fed into pixel circuit 71.
Hereinafter, being illustrated by taking embodiment and multiple variations as an example to the structure of the pixel circuit of the 2nd embodiment. In addition, in the explanation of embodiment below and variation, to the embodiment 1 or variation difference with the 1st embodiment It is illustrated, assigns identical label in the accompanying drawings to constituent element identical with the embodiment 1 of the 1st embodiment or variation And the description thereof will be omitted.
(embodiment 2)
" structure of pixel circuit "
Firstly, referring to Fig.1 5, the structure of the pixel circuit of the embodiment 2 of the 2nd embodiment is illustrated.Figure 15 is to say The figure of the structure of the pixel circuit of bright embodiment 2.As shown in figure 15, the pixel circuit 71 of embodiment 2 includes the 1st crystal of p-type The 4th transistor 34A, storage circuit 60, the 2nd transistor 32A of p-type and the complementation the 2nd of p-type of pipe 31A, light-emitting component 20, N-type Transistor 38A.
In addition, relative to the 1st embodiment, being exchanged in the 2nd embodiment (embodiment 2 and variation below) High potential and low potential.Specifically, the 1st current potential (V1) is the 1st low potential VSS1 (such as V1=VSS1=4.0V), the 2nd electricity Position (V2) is high potential VDD (such as V2=VDD=7.0V), and the 3rd current potential (V3) is the 2nd low potential VSS2 (such as V3=VSS2 =0V).Therefore, the 1st current potential is lower than the 2nd current potential, and the 3rd current potential is lower than the 1st current potential.
In the present embodiment, low-voltage is constituted by the 1st current potential (the 1st low potential VSS1) and the 2nd current potential (high potential VDD) System power supply constitutes high-voltage system power supply by the 3rd current potential (the 2nd low potential VSS2) and the 2nd current potential (high potential VDD).2nd electricity Position is the current potential in low-voltage system power supply and high-voltage system power supply as benchmark.
In addition, in the 2nd embodiment (embodiment 2 and variation below), from the 1st low electricity as the 1st equipotential line Bit line 46 supplies the 1st current potential (VSS1) to each pixel circuit 71, from the high potential line 47 as the 2nd equipotential line to each pixel circuit 71 the 2nd current potentials (VDD) of supply, the 3rd current potential is supplied from the 2nd low potential line 48 as the 3rd equipotential line to each pixel circuit 71 (VSS2)。
In example 2, the 1st transistor 31A, light-emitting component 20 and the 4th transistor 34A are configured in series in the 2nd current potential Between line (high potential line 47) and the 3rd equipotential line (the 2nd low potential line 48).In a same manner as in the first embodiment, storage circuit 60 configures Between the 1st equipotential line (the 1st low potential line 46) and the 2nd equipotential line (high potential line 47).2nd transistor 32A configuration is storing Between circuit 60 and signal wire 43.The 2nd transistor 38A of complementation is configured between storage circuit 60 and complementary signal line 45.
The output terminal 27 of 2nd phase inverter 62 of the grid and storage circuit 60 of the 1st transistor 31A is electrically connected.1st crystal The source electrode of pipe 31A is electrically connected with the 2nd equipotential line (high potential line 47).The drain electrode of 1st transistor 31A and the anode of light-emitting component 20 21 electrical connections.The grid of 4th transistor 34A is electrically connected with control line 44.The source electrode and the 3rd equipotential line the (the 2nd of 4th transistor 34A Low potential line 48) electrical connection.The drain electrode of 4th transistor 34A is electrically connected with the cathode 23 of light-emitting component 20.
In the pixel circuit 71 of embodiment 2, the polarity of the 1st transistor 31A and the 4th transistor 34A are opposite.The 1st of p-type Transistor 31A configuration is configured in the position for leaning on hot side than light-emitting component 20, the 4th transistor 34A of N-type than light-emitting component 20 lean on the position of low potential side.When the 4th transistor 34A and the 1st transistor 31A becomes on state, light-emitting component 20 can be sent out Light.When the 1st transistor 31A and the 4th transistor 34 become on state, from the 2nd equipotential line (high potential line 47) via the 1st crystalline substance The path that body pipe 31A, light-emitting component 20 and the 4th transistor 34A reach the 3rd equipotential line (the 2nd low potential line 48) becomes conducting shape State flows through electric current in light-emitting component 20.
In the 2nd embodiment (embodiment 2 and variation below), storage circuit 60 the 1st phase inverter 61 it is defeated Under the case where current potential of terminal 25 is "high" out (the case where current potential of the output terminal 27 of the 2nd phase inverter 62 is " low "), shine Element 20 becomes the state that can be shone, (the 2nd phase inverter the case where current potential of the output terminal 25 of the 1st phase inverter 61 is " low " The case where current potential of 62 output terminal 27 is "high") under, light-emitting component 20 does not shine.
" relationship of the threshold voltage of each current potential and transistor "
In the 2nd embodiment (embodiment 2 and variation below), also by the 1st current potential (V1) and the 2nd current potential (V2) structure At low-voltage system power supply, high-voltage system power supply is constituted by the 3rd current potential (V3) and the 2nd current potential (V2).2nd current potential (V2) is opposite In the voltage as low-voltage system power supply the 1st current potential (V1) potential difference (V2-V1=7.0V-4.0V=3.0V) less than Potential difference (V2-V3=7.0V-0V=of 2 current potentials (V2) relative to the 3rd current potential (V3) of the voltage as high-voltage system power supply 7.0V)(V2-V1<V2-V3)。
In the 2nd embodiment, using low-voltage system power supply with the low-voltage of V2-V1=3.0V to driving circuit 51, Storage circuit 60 is driven, and therefore, driving circuit 51, storage circuit 60 can be made to act at high speed.Moreover, utilizing high voltage System power supply makes light-emitting component 20 shine with the high voltage of V2-V3=7.0V, therefore, light-emitting component 20 can be made with higher bright Degree shines.Also, by moving the 1st transistor 31A, the 4th transistor 34A that configure in series with light-emitting component 20 linearly Make, therefore the major part for the high voltage that can apply V2-V3=7.0V to light-emitting component 20 can more improve light-emitting component 20 it is luminous when brightness.
In the 2nd embodiment, 2 phase inverters 61,62 for constituting storage circuit 60 are configured in the 1st equipotential line (the 1st low electricity Bit line 46) and the 2nd equipotential line (high potential line 47) between, supply the VSS1 and work as the 1st current potential to 2 phase inverters 61,62 For the VDD of the 2nd current potential.Therefore, " low " is equivalent to the 1st current potential (VSS1), and "high" is equivalent to the 2nd current potential (VDD).
In the present embodiment, the threshold voltage (V as the 1st transistor 31A of driving transistorth1) be negative (Vth1< 0).When the picture signal that storage circuit 60 is stored is equivalent to non-luminescent, the current potential of the output terminal 27 of storage circuit 60 is "high" (the 2nd current potential).The source electrode of 1st transistor 31A is connect with the 2nd equipotential line (high potential line 47), therefore, source potential 2 current potentials (VDD), the gate-source voltage V of the 1st transistor 31Ags1For 0V.
Therefore, as gate-source voltage Vgs1Threshold voltage V relative to the 1st transistor 31Ath1(as an example, Vth1=- 0.36V) be 0V when, gate-source voltage Vgs1Greater than threshold voltage Vth1, therefore, the 1st transistor 31A becomes off state.By This can make the 1st transistor 31A reliably become off state when picture signal does not shine.
When the picture signal that storage circuit 60 is stored is equivalent to luminous, the current potential of the output terminal 27 of storage circuit 60 For " low " (the 1st current potential).The source potential of 1st transistor 31A is the 2nd current potential, therefore, the gate-source electricity of the 1st transistor 31A Press Vgs1Potential difference (V for the 1st current potential (V1) relative to the 2nd current potential (V2)gs1=V1-V2=4.0V-7.0V=-3.0V).Cause This, the gate-source voltage V of the 1st transistor 31Ags1Less than threshold voltage Vth1, therefore, the 1st transistor 31A becomes conducting shape State.As a result, in image signal luminescence, the 1st transistor 31A can reliably be made to become on state.
In the 2nd embodiment, inactive signal also is supplied to whole control lines 44 in (non-display period) during the 1st As control signal, the 4th transistor 34A becomes off state, and therefore, light-emitting component 20 becomes non-light emitting state.Moreover, working as When any one scan line in during 1st into scan line 42 supplies selection signal as scanning signal, the selected 2nd is brilliant Body pipe 32A and the 2nd transistor 38A of complementation becomes on state, writes from signal wire 43 and complementary signal line 45 to storage circuit 60 Enter picture signal.
Control signal, the 4th transistor are used as to whole control lines 44 supply activation signal in (during display) during the 2nd 34A becomes on state, and therefore, light-emitting component 20 is can luminance.Make the to the supply of whole scan lines 42 in during the 2nd 2 transistor 32A are the non-select signal of off state as scanning signal.In this way, in the 2nd embodiment, due to can be right It is independently controlled (during display) during (non-display period) and the 2nd during 1st, is driven so being able to carry out based on digital time-division Dynamic gray scale is shown.
In the 2nd embodiment (embodiment 2), the 4th transistor 34A is N-type, therefore, the control signal under state of activation (activation signal) is high potential, and the control signal (inactive signal) under unactivated state is low potential.Specifically, inactive Signal is set as the 3rd current potential (V3) low potential below, preferably the 3rd current potential (V3).In addition, activation signal is set as V3+ (V2-V1) high potential more than, preferably the 2nd current potential (V2).
When supplying the inactive signal of the 3rd current potential (V3) from control line 44 to the grid of the 4th transistor 34A, the 4th crystal The source potential and grid potential of pipe 34A becomes the 3rd current potential (V3), therefore, the gate-source voltage V of the 4th transistor 34Ags4 As 0V.As the threshold voltage V of the 4th transistor 34A using N-typeth4(as an example, Vth4=0.36V) when, the 4th transistor The gate-source voltage V of 34Ags4Than threshold voltage Vth4Small, therefore, the 4th transistor 34A becomes off state.Therefore, it is controlling When signal is inactive signal, it can reliably make the 4th transistor 34A off state.
When more than the supply of control line 44 V3+ (V2-V1), i.e. the activation of the current potential of 0V+ (7.0V-4.0V)=3.0V or more When signal, the gate-source voltage V of the 4th transistor 34Ags4For 3.0-0V=3.0V or more.Therefore, the grid of the 4th transistor 34A Pole source voltage Vgs4Sufficiently above threshold voltage Vth4, therefore, when controlling signal is activation signal, can reliably make the 4th Transistor 34A is on state.
Moreover, more improving the current potential of activation signal, the gate-source voltage V of the 4th transistor 34Ags4More increase.If set The current potential of activation signal is the 2nd current potential (V2), then the gate-source voltage V of the 4th transistor 34Ags4For V2-V3=7.0V-0V= The conducting resistance decline of 7.0V, the 4th transistor 34A under on state, therefore, when making light-emitting component 20 shine, not vulnerable to To the influence of the deviation of the threshold voltage of the 4th transistor 34A.
In addition, when supplying non-select signal as scanning signal from the scan line 42 being electrically connected with grid, it is alternatively that brilliant 2nd transistor 32A of body pipe becomes off state, when supplying selection signal, it is alternatively that the 2nd transistor 32A of transistor As on state.In the 2nd embodiment, the 2nd transistor 32A is p-type, therefore, as described above, non-select signal is set as High potential more than 2nd current potential (V2), preferably the 2nd current potential (V2).In addition, selection signal is set as the 1st current potential (V1) below Low potential, preferably the 3rd current potential (V3).
In the 2nd embodiment, it is preferred that the polarity of the 1st transistor 31A and the 2nd transistor 32A is identical.It is real the 2nd It applies in mode, the 1st transistor 31A and the 2nd transistor 32A are p-type.Therefore, in the current potential of the picture signal supplied to grid When for " low ", the 1st transistor 31A becomes on state, when the scanning signal supplied to grid is selection signal (" low "), the 2 transistor 32A become on state.The " low " of picture signal is the 1st current potential (V1), but selection signal (" low ") is set as the 1st Current potential (V1) is hereinafter, preferably the 3rd current potential (V3).
The current potential for setting selection signal is rewritten as the 3rd current potential (V3), by the picture signal of storage circuit 60 from "high" The case where " low ", is illustrated.Before rewriting picture signal, it is electrically connected with a side of the source drain of the 2nd transistor 32A The input terminal 28 (output terminal 25 of the=the 1 phase inverter 61) of 2nd phase inverter 62 is the 2nd current potential (V2) of "high".When from sweeping When retouching selection signal of the line 42 to the grid of the 2nd transistor 32A the 3rd current potential (V3) of supply, the gate-source of the 2nd transistor 32A Voltage Vgs2As V3-V2=0V-7.0V=-7.0V, lower than the threshold voltage V of the 2nd transistor 32Ath2(as an example, Vth2 =-0.36V), therefore, the 2nd transistor 32A becomes on state.
By by the picture signal of " low " (V1) from 43 write storage circuit 60 of signal wire, the input terminal of the 2nd phase inverter 62 The current potential of son 28 gradually decreases down " low " (V1) from "high" (V2), but is accompanied by this, the gate-source voltage of the 2nd transistor 32A Vgs2Absolute value gradually decrease to V3-V1=0V-4.0V=-4.0V.Even if the gate-source voltage V of the 2nd transistor 32Ags2 As highest (close to zero) -4.0V, gate-source voltage Vgs2Also than the threshold voltage V of the 2nd transistor 32Ath2It is substantially low.Cause This, maintains the lower state of conducting resistance of the 2nd transistor 32A until by picture signal write storage circuit 60, therefore, can Picture signal is reliably written storage circuit 60.
Here, suppose that the 2nd transistor 32A is the polarity N-type (be set as 2nd transistor 32) opposite with the 1st transistor 31A Situation.In this case, when selection signal is "high", the 2nd transistor 32 becomes on state.When the current potential for setting selection signal For the 2nd current potential (V2), the picture signal of storage circuit 60 is rewritten as "high" from " low " in the case where, from the supply of scan line 42 the When the selection signal of 2 current potentials (V2), the gate-source voltage V of the 2nd transistor 32gs2It is high for V2-V1=7.0V-4.0V=3.0V In the threshold voltage V of the 2nd transistor 32th2(as an example, Vth2=0.36V), therefore, the 2nd transistor 32 becomes on state.
By the way that the picture signal of "high" (V2), the input terminal of the 2nd phase inverter 62 are written from signal wire 43 to storage circuit 60 The current potential of son 28 is gradually increasing from " low " (V1), is accompanied by this, the gate-source voltage V of the 2nd transistor 32gs2Gradually from 3.0V Decline reaches the threshold voltage V of the 2nd transistor 32 of N-type before the current potential of input terminal 28 is the 2nd current potential (V2)th2(example Such as 0.36V), the 2nd transistor 32 becomes off state.
In addition, before the 2nd transistor 32 becomes off state, with gate-source voltage Vgs2Decline and close to threshold value Voltage Vth2, the conducting resistance of the 2nd transistor 32 rises, therefore, is spent to the rewriting of the picture signal of storage circuit 60 time, Or rewrite failure.It is more low potential by the potential setting of selection signal in order to avoid the problem, but in this case, Also need the equipotential line different from existing current potential.
As in the present embodiment, when the 1st transistor 31A and the 2nd transistor 32A are the identical polar of p-type, pass through Make the 3rd current potential minimum between the 3rd current potential of current potential of selection signal and the 2nd current potential, new equipotential line can be not provided with In the case of set.Moreover, make the 2nd transistor 32A on state and when picture signal is written to storage circuit 60, Neng Gouzeng The gate-source voltage V of big 2nd transistor 32Ags2, therefore, though source potential due to picture signal write-in and rise, Can the conducting resistance of the 2nd transistor 32A be maintained lower.Thereby, it is possible to high speed and reliably carry out to storage circuit 60 Picture signal write-in, rewrite.
Therefore, according to the structure of the pixel circuit 71 of the embodiment 2 of the 2nd embodiment, may be implemented can be with low-power consumption Act and can get to the image of the high quality of display of high resolution and more gray scales and higher speed the electric light of brighter display Device 10.
Hereinafter, the variation of the structure of the pixel circuit of the 2nd embodiment of explanation.In the explanation of variation below, Difference with embodiment 2 or above-mentioned variation is illustrated, to composition identical with embodiment 2 or above-mentioned variation Element, assigns identical label on attached drawing and the description thereof will be omitted.
(variation 4)
Next, the pixel circuit of the variation (variation 4) of the 2nd embodiment of explanation.Figure 16 illustrates variation 4 The figure of the structure of pixel circuit.As shown in figure 16, the difference of the pixel circuit 71 of the pixel circuit 71A and embodiment 2 of variation 4 Place is that the 4th transistor 34 is p-type, configures between the 1st transistor 31A and light-emitting component 20, other structures are identical.
The pixel circuit 71A of variation 4 includes the 4th transistor 34, the light-emitting component of the 1st transistor 31A of p-type, p-type 20, storage circuit 60, the 2nd transistor 32A of p-type and p-type the 2nd transistor 38A of complementation.The drain electrode of 1st transistor 31A and the The source electrode of 4 transistors 34 is electrically connected.The drain electrode of 4th transistor 34 is electrically connected with the anode 21 of light-emitting component 20.That is, in variation In 4 pixel circuit 71A, the configuration of the 4th transistor 34 of p-type is in the position for leaning on hot side than light-emitting component 20, and the 1st of p-type the Transistor 31A configuration is in the position for leaning on hot side than the 4th transistor 34.
In variation 4, the 4th transistor 34 is p-type, therefore, if the current potential of inactive signal is the 2nd current potential of high potential (V2), the current potential of activation signal is the 3rd current potential (V3) of low potential.When to control line 44 supply activation signal and make the 4th crystal When the grid potential of pipe 34 becomes current potential identical with the 3rd current potential, the 4th transistor 34 becomes on state.When the 1st transistor When 31A and the 4th transistor 34 become on state, from the 2nd equipotential line (high potential line 47) via the 1st transistor 31A, the 4th crystalline substance The path that body pipe 34 and light-emitting component 20 reach the 3rd equipotential line (the 2nd low potential line 48) becomes on state, in light-emitting component 20 In flow through electric current.
In variation 4, the 1st transistor 31A is configured between the 4th transistor 34 and the 2nd equipotential line (high potential line 47). Therefore, when the 4th transistor 34 becomes on state, the source potential of the 4th transistor 34 is slightly lower than the 2nd current potential (V2).But It is that, by making the 1st transistor 31A carry out line movement, the source potential of the 4th transistor 34 and the 2nd current potential substantially phase can be made Deng.
Therefore, the gate-source voltage V of the 4th transistor 34gs4Current potential with the 3rd current potential (V3) relative to the 2nd current potential (V2) Poor (V3-V2=-7.0V) is roughly equal, less than the threshold voltage V of the 4th transistor 34 of p-typeth4(Vth4=-0.36V), therefore, 4th transistor 34 reliably becomes on state.Moreover, the gate-source voltage V of the 4th transistor 34 under on stategs4Far Much smaller than threshold voltage Vth4, therefore, the 4th transistor 34 can be made to carry out line movement.
(variation 5)
Next, the pixel circuit of the variation (variation 5) of the 2nd embodiment of explanation.Figure 17 illustrates variation 5 The figure of the structure of pixel circuit.As shown in figure 17, the pixel circuit 71A of the pixel circuit 71B of variation 5 and variation 4 is not It is with place, the 1st transistor 31A is configured between the 4th transistor 34 and light-emitting component 20, and other structures are identical.
The pixel circuit 71B of variation 5 includes the 1st transistor 31A, the light-emitting component of the 4th transistor 34 of p-type, p-type 20, storage circuit 60, the 2nd transistor 32A of p-type and p-type the 2nd transistor 38A of complementation.The source electrode and the 2nd of 4th transistor 34 Equipotential line (high potential line 47) electrical connection.The source electrode of 1st transistor 31A is electrically connected with the drain electrode of the 4th transistor 34, the 1st crystal The drain electrode of pipe 31A is electrically connected with the anode 21 of light-emitting component 20.That is, the 1st of p-type is brilliant in the pixel circuit 71B of variation 5 Body pipe 31A configuration is configured in the position for leaning on hot side than light-emitting component 20, the 4th transistor 34 of p-type than the 1st transistor 31A leans on the position of hot side.
In variation 5, the 4th transistor is configured between the 1st transistor 31A and the 2nd equipotential line (high potential line 47) 34.Therefore, when the 1st transistor 31A becomes on state, the source potential of the 1st transistor 31A is slightly lower than the 2nd current potential (V2).But by making the 4th transistor 34 carry out line movement, the source potential and the 2nd current potential of the 1st transistor 31A can be made It is roughly equal.Therefore, the gate-source voltage V of the 1st transistor 31Ags1Electricity with the 1st current potential (V1) relative to the 2nd current potential (V2) Potential difference (V1-V2=-3V) is roughly equal, therefore, the 1st transistor 31A can be made reliably to become on state and carried out linear Movement.
(variation 6)
Next, the pixel circuit of the variation (variation 6) of the 2nd embodiment of explanation.Figure 18 illustrates variation 6 The figure of the structure of pixel circuit.As shown in figure 18, the pixel circuit 71C Yu above-described embodiment 2 of variation 6 and variation be not It is do not have the 4th transistor 34 (or the 4th transistor 34A), other structures are identical with place.
The pixel circuit 71C of variation 6 includes light-emitting component 20, the 1st transistor 31A of p-type, storage circuit 60, p-type The 2nd transistor 38A of complementation of 2nd transistor 32A and p-type.The source electrode and the 2nd equipotential line (high potential line 47) of 1st transistor 31A Electrical connection, the drain electrode of the 1st transistor 31A are electrically connected with the anode 21 of light-emitting component 20.The cathode 23 of light-emitting component 20 and the 3rd electricity Bit line (the 2nd low potential line 48) electrical connection.
In the pixel circuit 71C of variation 6, in the 2nd equipotential line (high potential line 47) and the 3rd equipotential line (the 2nd low potential Line 48) between in series be configured with the 1st transistor 31A and light-emitting component 20.Therefore, in the output terminal 27 of storage circuit 60 When current potential becomes " low " (the 1st current potential), the 1st transistor 31A becomes on state, light-emitting component 20 shines.In variation 6, Also same as above-described embodiment 2 and variation, it can be improved brightness when light-emitting component 20 shines, further, it is possible to substantially arrange Except the threshold voltage V of the 1st transistor 31Ath1The deviation of light emission luminance relative to light-emitting component 20.
In addition, the quantity of wiring therefore can be reduced without control line 44 in the pixel circuit 71C of variation 6, because This, can also reduce the quantity of wiring layer.Therefore, compared with above-described embodiment and variation, it can be realized manufacturing effort It reduces, the raising of fabrication yield.In addition, the quantity of the wiring with light-proofness is reduced, thereby, it is possible to reduce lightproof area, It can be realized high resolution (miniaturization of pixel).
(the 3rd embodiment)
Then, illustrate the structure of the electro-optical device of the 3rd embodiment.Figure 19 is the electric light of the 3rd embodiment of the invention The circuit block diagram of device.Figure 20 is the figure for illustrating the structure of pixel of the 3rd embodiment of the invention.Figure 21 is to illustrate the present invention The 3rd embodiment pixel circuit structure figure.
As shown in figure 19, in the present embodiment, the selection of signal-line driving circuit 53 and scan line 42 is synchronously to N item Signal wire 43 is supplied respectively to picture signal (Data).But in the present embodiment, with the 1st embodiment, the 2nd embodiment Difference, signal-line driving circuit 53 do not export complementary image signal.Therefore, as shown in figure 20, image is supplied to pixel circuit 81 Signal (Data), but complementary image signal is not supplied.It therefore,, will for example, utilizing in pixel circuit 81 as illustrated in Figure 21 Picture signal (Data) be supplied to via the 2nd transistor 32A and storage circuit 60 p-type of grid the 1st transistor 31A and The 4th transistor 34 for controlling the p-type that signal Enb is supplied to grid is controlled to the energization to light-emitting component 20.
In the present embodiment, to supply the 1st low potential VSS1, the 2nd low potential VSS2 and high potential VDD to driving portion 50 The 2nd embodiment based on and constitute, but can also with to driving portion 50 supply the 1st high potential VDD1, the 2nd high potential VDD2 It is constituted with based on the 1st embodiment of low potential VSS.
Above embodiment (embodiment and variation) only shows one embodiment of the present invention, can be in model of the invention Enclose interior progress random variation and application.As variation other than the above, for example, it is contemplated that following variation.
(variation 7)
It is configured in the pixel circuit of above embodiment (embodiment and variation), the 1st transistor 31 (or the 1st Transistor 31A) grid be electrically connected with the output terminal 27 of the 2nd phase inverter 62 of storage circuit 60, but the present invention is not limited to this The mode of sample.Also the grid of the 1st transistor 31 (or the 1st transistor 31A) and the 1st reverse phase of storage circuit 60 are configured to The output terminal 25 of device 61 is electrically connected.
(variation 8)
It is configured in the pixel circuit of above embodiment (embodiment and variation), the configuration of the 2nd transistor 32 is being deposited Between the input terminal 28 (output terminal 25 of the=the 1 phase inverter 61) and signal wire 43 of 2nd phase inverter 62 on storage road 60, mutually The configuration of the 2nd transistor 38 is mended in (the output end of the=the 2 phase inverter 62 of input terminal 26 of the 1st phase inverter 61 of storage circuit 60 Son is 27) between complementary signal line 45, but the present invention is not limited to such modes.Also it is configured to, the 2nd transistor 32 is matched It sets between the input terminal 26 (output terminal 27 of the=the 2 phase inverter 62) and signal wire 43 of the 1st phase inverter 61, complementation the 2nd Transistor 38 configures the input terminal 28 (output terminal 25 of the=the 1 phase inverter 61) and complementary signal line in the 2nd phase inverter 62 Between 45.
(variation 9)
In the pixel circuit of above embodiment (embodiment and variation), storage circuit 60 include 2 phase inverters 61, 62, but the present invention is not limited to such modes.Storage circuit 60 is also possible to the knot of the even number of inverters comprising 2 or more Structure.
(variation 10)
In above embodiment (embodiment and variation), as electro-optical device, (single by single crystalline semiconductor substrate Crystal silicon substrate) constitute device substrate 11 on by 720 row × 3840 (1280 × 3) column in the way of be arranged with by organic EL element It is illustrated for the organic el device of the light-emitting component 20 of composition, but electro-optical device of the invention is not limited to such side Formula.For example, electro-optical device, which can have, is formed with thin film transistor (TFT) (Thin on the device substrate 11 being made of glass substrate Film Transistor:TFT) structure as each transistor, it is possible to have in the flexible base board being made of polyimides etc. On be formed with the structure of thin film transistor (TFT).In addition, electro-optical device is also possible to micro- light-emitting diode display or quantum dot (Quantum Dots) display, wherein micro- light-emitting diode display is to arrange fine LED element to high-density as made of light-emitting component, The quantum dot displays have used the semiconductor crystal substance of nano-scale in light-emitting component.In addition it is also possible to using by institute Incident light is converted to the quantum dot of the light of other wavelength as colour filter.
(variation 11)
In the above-described embodiment, as electronic equipment, the Clairvoyant type head-mounted display 100 of electro-optical device 10 has been entered with group For be illustrated, but electro-optical device 10 of the invention can also apply using enclosed type head-mounted display as representative other In electronic equipment.As other electronic equipments, for example, can enumerate projector, rear projection type televisions machine, direct viewing type television set, Mobile phone, personal computer, the monitor of video camera, automobile navigation apparatus, head-up display, is sought portable audio device The wearable devices such as pager, electronic notebook, calculator, wrist-watch, hand-held display device, word processor, work station, video electricity Words, POS terminal, digital still camera, signage display etc..

Claims (22)

1. a kind of electro-optical device, which is characterized in that
The electro-optical device includes scan line；Signal wire；Pixel circuit, the infall with the scan line and the signal wire It is arranged in correspondence with；1st equipotential line is supplied to the 1st current potential；2nd equipotential line is supplied to the 2nd current potential；And the 3rd equipotential line, It is supplied to the 3rd current potential,
The pixel circuit includes: light-emitting component；Storage circuit, configuration the 1st equipotential line and the 2nd equipotential line it Between；1st transistor, grid are electrically connected with the storage circuit；And the 2nd transistor, grid are electrically connected with the scan line It connects,
2nd transistor configures between the storage circuit and the signal wire,
The light-emitting component and the 1st transistor are configured in series between the 2nd equipotential line and the 3rd equipotential line,
1st current potential is less than the 3rd current potential relative to the described 2nd relative to the current potential absolute value of the difference of the 2nd current potential The current potential absolute value of the difference of current potential.
2. electro-optical device according to claim 1, which is characterized in that
The storage circuit includes the 3rd transistor,
The grid length of 3rd transistor is shorter than the grid length of the 1st transistor.
3. electro-optical device according to claim 2, which is characterized in that
The area of the channel formation region of 1st transistor described in the area ratio of the channel formation region of 3rd transistor is small.
4. electro-optical device according to claim 1, which is characterized in that
The source electrode of 1st transistor is electrically connected with the 2nd equipotential line,
The light-emitting component configuration is between the drain electrode and the 3rd equipotential line of the 1st transistor.
5. electro-optical device according to claim 1, which is characterized in that
The conducting resistance of 1st transistor is lower than the conducting resistance of the light-emitting component.
6. electro-optical device according to claim 1, which is characterized in that
1st transistor is identical with the polarity of the 2nd transistor.
7. electro-optical device according to claim 1, which is characterized in that
The electro-optical device has control line,
The pixel circuit includes the 4th transistor, and the grid of the 4th transistor is electrically connected with the control line,
The light-emitting component, the 1st transistor, the 4th transistor are configured in series in the 2nd equipotential line and described the Between 3 equipotential lines.
8. electro-optical device according to claim 7, which is characterized in that
The drain electrode of 4th transistor is electrically connected with the light-emitting component.
9. electro-optical device according to claim 7, which is characterized in that
The conducting resistance of 4th transistor is lower than the conducting resistance of the light-emitting component.
10. electro-optical device according to claim 7, which is characterized in that
The polarity of 1st transistor and the 4th transistor is opposite.
11. electro-optical device according to claim 7, which is characterized in that
When the 2nd transistor is on state, the 4th transistor is off state.
12. electro-optical device according to claim 7, which is characterized in that
Any one in the scan line is supplied to the 1st of the selection signal for making the 2nd transistor become on state Period, the control line are supplied to the inactive signal for making the 4th transistor become off state.
13. electro-optical device according to claim 12, which is characterized in that
During the control line is supplied to the 2nd of the activation signal for making the 4th transistor become on state the, the scanning Line is supplied to the non-select signal for making the 2nd transistor become off state.
14. electro-optical device according to claim 13, which is characterized in that
1st transistor is N-type, and the 4th transistor is p-type,
Set the 1st current potential as V1, the 2nd current potential be V2, the 3rd current potential is V3 when, be supplied to the control line The current potential of the activation signal be V3- (V1-V2) below.
15. electro-optical device according to claim 14, which is characterized in that
The current potential of the activation signal is the 2nd current potential.
16. electro-optical device according to claim 14, which is characterized in that
1st transistor and the 2nd transistor are N-type,
The current potential for being supplied to the selection signal of the scan line is the 1st current potential or more.
17. electro-optical device according to claim 16, which is characterized in that
The current potential of the selection signal is the 3rd current potential.
18. electro-optical device according to claim 13, which is characterized in that
1st transistor is p-type, and the 4th transistor is N-type,
Set the 1st current potential as V1, the 2nd current potential be V2, the 3rd current potential is V3 when,
The current potential for being supplied to the activation signal of the control line is V3+ (V2-V1) or more.
19. electro-optical device according to claim 18, which is characterized in that
The current potential of the activation signal is the 2nd current potential.
20. electro-optical device according to claim 18, which is characterized in that
1st transistor and the 2nd transistor are p-type,
The current potential for being supplied to the selection signal of the scan line is the 1st current potential or less.
21. electro-optical device according to claim 20, which is characterized in that
The current potential of the selection signal is the 3rd current potential.
22. a kind of electronic equipment, which is characterized in that
The electronic equipment has electro-optical device described in claim 1.
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