CN109804474A - The manufacturing method of solar battery cell - Google Patents

The manufacturing method of solar battery cell Download PDF

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Publication number
CN109804474A
CN109804474A CN201780057920.9A CN201780057920A CN109804474A CN 109804474 A CN109804474 A CN 109804474A CN 201780057920 A CN201780057920 A CN 201780057920A CN 109804474 A CN109804474 A CN 109804474A
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China
Prior art keywords
layer
battery cell
solar battery
manufacturing
semiconductor substrate
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铃木快
大贺一彦
藤原雅宏
友松优衣
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Ishihara Chemical Co Ltd
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Ishihara Chemical Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A kind of manufacturing method of solar battery cell is provided, process is simple, production is high and does not need the high organic solvent of volatility, and environmental pressure is small.The manufacturing method of solar battery cell includes: printing process, it will be by the fluid resin of active energy ray-curable to a part of region coating film-like in the interarea of semiconductor substrate (1) by print process, resin layer (5) are formed by fluid resin, which has the pattern for being capable of forming insulating layer (2)；Curing process irradiates active energy beam to resin layer (5), solidifies fluid resin, forms the insulating layer (2) being made of the solidfied material of fluid resin on the interarea of semiconductor substrate (1)；And plating process, opening portion (2a) in insulating layer (2) is interior, the electrode (3) being connect by the exposed surface that plating forms the semiconductor substrate (1) exposed with opening (2a) from insulating layer (2).

Description

The manufacturing method of solar battery cell
Technical field
The present invention relates to the manufacturing methods of solar battery cell.
Background technique
It has been known that there is the manufacturing methods for the solar battery cell for having used photomechanical production technology and plating.Such as patent Following method is disclosed in document 1: liquid light-cured resin is coated on by spin-coating method, spray coating method, infusion process etc. Resin layer is formed in the whole region of the interarea of silicon substrate, light irradiation selectively is carried out to the presumptive area of resin layer and is made The light-cured resin of presumptive area is solidified.Since the light-cured resin in the not no region of irradiation light does not solidify, institute Will be removed without cured light-cured resin with acetone and other organic solvent, pattern is formed, formation is provided with opening portion Insulating layer.In turn, implement plating, and the conductive film layer exposed in opening portion for the insulating layer with opening portion as mask Upper formation electrode, has thus obtained solar battery cell.
However, the manufacturing method of solar battery cell disclosed in patent document 1, exists via photomask to resin layer Presumptive area selectively carry out the necessity of light irradiation, will be gone with organic solvent without cured light-cured resin The necessity removed, therefore in the presence of process is tedious and production deficiency such problems point.In addition, due to using volatility is high to have Solvent, so there is also the big such problems points of environmental pressure.
Existing technical literature
Patent document
Patent document 1: International Publication No. 2012/029847
Summary of the invention
Subject to be solved by the invention
Then, problem of the present invention is that solving the problems of conventional art as described above point, a kind of work is provided Sequence is simple, production is high and does not need the high organic solvent of volatility to the manufacture of the small solar battery cell of environmental pressure Method.
A technical solution to solve project
In order to solve the above problems, a technical solution [1] for example below~[11] of the invention.
[1] a kind of manufacturing method of solar battery cell, for manufacturing solar battery cell, the solar battery Unit has semiconductor substrate, the insulating layer being formed on the interarea of the semiconductor substrate and connects with the semiconductor substrate The electrode connect, the insulating layer have opening portion, the electrode configuration in the opening portion and with pass through the opening portion The exposed surface connection of the semiconductor substrate exposed from the insulating layer,
The manufacturing method includes:
Printing process, will be by the fluid resin of active energy ray-curable to described semiconductor-based by print process A part of region coating film-like in the interarea of plate forms resin layer by the fluid resin, and the resin layer has can Form the pattern of the insulating layer；
Curing process irradiates active energy beam to the resin layer and solidifies the fluid resin, partly leads described The insulating layer being made of the solidfied material of the fluid resin is formed on the interarea of structure base board；
Plating process forms the dew with the semiconductor substrate by plating in the opening portion of the insulating layer Appear connection the electrode.
[2] manufacturing method of the solar battery cell according to [1], the print process include silk screen print method.
[3] manufacturing method of the solar battery cell according to [1] or [2], at 25 DEG C of the fluid resin Viscosity is 1Pas or more and 200Pas or less.
[4] manufacturing method of the solar battery cell according to any one of [1]~[3], the thickness of the insulating layer Degree is 5 μm or more and 100 μm or less.
[5] manufacturing method of the solar battery cell according to any one of [1]~[4], the plating are electricity Plating method or electroless plating method.
[6] manufacturing method of the solar battery cell according to any one of [1]~[5], the electrode by copper, At least one of nickel, tin, silver, cobalt, zinc, palladium, indium and their alloy are constituted.
[7] manufacturing method of the solar battery cell according to any one of [1]~[6], the thickness of the electrode It is 0.1 μm or more and 100 μm or less.
[8] manufacturing method of the solar battery cell according to any one of [1]~[7], the electrode is by one Metal film or multiple metal films of stacking are constituted.
[9] manufacturing method of the solar battery cell according to any one of [1]~[8], in the curing process In, point multiple stages irradiate the active energy beam to the resin layer, consolidate the fluid resin point multiple stages Change.
[10] manufacturing method of the solar battery cell according to [9], at first of the active energy beam The light source of the active energy beam used in the irradiation in stage is LED light.
[11] manufacturing method of the solar battery cell according to any one of [1]~[10], in the solidification work In sequence, the temperature of the semiconductor substrate when fluid resin solidifies is 200 DEG C or less.
Invention effect
The process of the manufacturing method of solar battery cell of the present invention is simple, production is high and does not need volatility High organic solvent, environmental pressure are small.
Detailed description of the invention
Fig. 1 be indicate the first embodiment of the present invention is related to solar battery cell structure sectional view.
Fig. 2 is the top view of the solar battery cell of Fig. 1 from light receiving side.
Fig. 3 is the top view of the solar battery cell of Fig. 1 from back side.
Fig. 4 is the sectional view of the manufacturing method of the solar battery cell of explanatory diagram 1.
Fig. 5 is the sectional view of the manufacturing method of the solar battery cell of explanatory diagram 1.
Fig. 6 is the sectional view of the manufacturing method of the solar battery cell of explanatory diagram 1.
Fig. 7 is the sectional view of the manufacturing method of the solar battery cell of explanatory diagram 1.
Fig. 8 is the sectional view of the structure for the solar battery cell for indicating that second embodiment of the present invention is related to.
Fig. 9 is the top view of the solar battery cell of Fig. 8 from light receiving side.
Figure 10 is the top view of the solar battery cell of Fig. 8 from back side.
Figure 11 is the sectional view of the manufacturing method of the solar battery cell of explanatory diagram 8.
Figure 12 is the sectional view of the manufacturing method of the solar battery cell of explanatory diagram 8.
Figure 13 is the sectional view of the manufacturing method of the solar battery cell of explanatory diagram 8.
Figure 14 is the sectional view of the manufacturing method of the solar battery cell of explanatory diagram 8.
Specific embodiment
Hereinafter, being illustrated to an embodiment of the invention.In addition, each attached drawing is the figure schematically drawn, because Dimensional ratios of this each structure etc. are sometimes different between attached drawing and material object, sometimes also different between each attached drawing.
(first embodiment)
The solar battery cell of first embodiment shown in Fig. 1~3, the light-receiving surface face of upside (in Fig. 1 be) with And the back side (being the face of downside in Fig. 1) in the face of the opposite side as light-receiving surface has bus bar electrode (Busbar Electrode) 31 and finger electrodes (finger electrode) 32.That is, in the solar battery list of first embodiment The light-receiving surface of member, as shown in Fig. 2, configured with linear bus bar electrode 31 and in the mode orthogonal with bus bar electrode 31 Configured with linear finger electrodes 32.As shown in figure 3, also being configured at the back side of the solar battery cell of first embodiment There is linear bus bar electrode 31 and in the mode orthogonal with bus bar electrode 31 configured with linear finger electrodes 32.
In addition, the solar battery cell of first embodiment has semiconductor substrate 1, is formed in semiconductor substrate 1 The insulating layer 2 (light receiving side and back side) of translucency on two interareas, the 3 (light-receiving surface of electrode being connect with semiconductor substrate 1 Side and back side).Two insulating layers 2 (light receiving side and back side) are respectively provided with opening portion 2a (light receiving side and back Surface side).In addition, " opening portion " in the present invention refers in the various layers such as insulating layer 2, following resin layers 5, this layer is constituted The part that material is penetratingly not present in a thickness direction from light receiving side to back side is (for example, in a thickness direction through exhausted The through hole of the layers such as edge layer 2, resin layer 5), it does not include constituting the material of this layer to be present in one from light receiving side to back side Recessed portion (such as having bottom outlet) in point.
Electrode 3 (light receiving side and back side) is configured in opening portion 2a (light receiving side and back side), and is passed through The semiconductor substrate 1 that opening portion 2a (light receiving side and back side) exposes from insulating layer 2 (light receiving side and back side) Exposed surface connection, light-receiving surface and the back side respectively on above-mentioned bus bar electrode 31 and finger electrodes 32 are made of electrode 3.
As shown in Figure 1, semiconductor substrate 1 has: being formed with the concaveconvex structure of referred to as texture (texture) in two interareas N-shaped monocrystalline silicon substrate 11；Be laminated on two interareas of N-shaped monocrystalline silicon substrate 11 i-type amorphous silicon layer 12 (light receiving side and Back side)；The p-type amorphous silicon layer 13 being laminated in the i-type amorphous silicon layer 12 of light receiving side；It is laminated in the i type amorphous of back side N-shaped amorphous silicon layer 14 on silicon layer 12；And it is respectively laminated on transparent on p-type amorphous silicon layer 13 and N-shaped amorphous silicon layer 14 Conductive film layer 15 (light receiving side and back side).
The exposing for the semiconductor substrate 1 that the electrode 3 and opening 2a being configured in the 2a of opening portion expose from insulating layer 2 Face, i.e. transparent conductive film layer 15 connect.In first embodiment, transparent conductive film is formed on the most surface layer of semiconductor substrate 1 Layer 15, therefore opening 2a expose semiconductor substrate 1 exposed surface be transparent conductive film layer 15 surface, but for Most surface layer was formed with for the case where other kinds of layer, and the surface on the most surface layer becomes exposed surface.
Electrode 3 is made of the metal film formed by plating.The solar energy of first embodiment shown in Fig. 1 In battery unit, electrode 3 is made of the three-layered metal film being laminated.That is, being laminated with nickel plating on transparent conductive film layer 15 Coating 3a is laminated with copper plating layer 3b on nickel plating layer 3a, and tin plating layer 3c is laminated on copper plating layer 3b.
Although in addition, in the example in fig 1, constituting electrode 3, the stacking of metal film by three layers of metal film being laminated Number is not limited to three layers, can be two layers, is also possible to four layers or more.Also, electrode 3 can also be by layer of metal film structure At.
The surface of transparent conductive film layer 15 concave-convex surface due to the influence of the texture of the N-shaped monocrystalline silicon substrate 11 of lower layer, but Because electrode 3 (nickel plating layer 3a) is formed in such a way that the concavo-convex surface with transparent conductive film layer 15 completely attaches to, so thoroughly The close property of bright conductive film layer 15 and electrode 3 (nickel plating layer 3a) is high, and contact resistance remains lower.
Then, referring to Fig.1 and Fig. 4~7, the manufacturing method of the solar battery cell of first embodiment is said It is bright.
Firstly, by be added to arbitrary impurity be referred to as ingot monocrystalline silico briquette be sliced, be made with a thickness of 100 μm with Upper and 200 μm of plate objects below.Then, which is carried out being impregnated in sodium hydroxide solution, hydrogen-oxygen after the cleaning of basis Change the alkaline solutions such as potassium solution, in its surface imperfection forms the bumps of referred to as multiple Pyramids of texture, n is made Type monocrystalline silicon substrate 11.The concave-convex difference of height of Pyramid is up to 20 μm, has the work for the reflection for reducing incident light With and promote solar battery cell in light scattering effect.
In addition, concave-convex height, the size, shape of the Pyramid formed on the surface of N-shaped monocrystalline silicon substrate 11 Deng, it both can be all roughly the same, it can also be inconsistent.Also, the knot that adjacent concave-convex a part is overlapped both was can have Structure is also possible to there is no the part being overlapped, concave-convex all independent.Concave-convex top, bottom can be sharp, be also possible to With circular arc.
Then, RCA cleaning is implemented (using the organic of the aqueous solution containing ammonia and hydrogen peroxide to N-shaped monocrystalline silicon substrate 11 The removal of pollutant and foreign matter and using the aqueous solution containing hydrogen chloride and hydrogen peroxide metal pollutant removal) etc. it is clear It washes after processing, removes surface film oxide with hydrofluoric acid aqueous solution.Then, with plasma CVD method (plasma auxiliary chemical Vapour deposition process), i-type amorphous silicon layer 12 is formed on the interarea of the light receiving side of N-shaped monocrystalline silicon substrate 11, further on it P-type amorphous silicon layer 13 is formed, and forms i-type amorphous silicon layer 12 on the interarea of the back side in N-shaped monocrystalline silicon substrate 11, into one Step is formed on N-shaped amorphous silicon layer 14.
In addition, i-type amorphous silicon layer 12 be using the reaction gas such as silane, hydrogen, carbon dioxide with constant deposition velocity at Film.P-type amorphous silicon layer 13 is to be formed a film using reaction gas such as silane, hydrogen, diboranes with constant deposition velocity.N-shaped is non- Crystal silicon layer 14 is to be formed a film using reaction gas such as silane, hydrogen, phosphines with constant deposition velocity.I-type amorphous silicon layer 12, p-type are non- The film thickness of crystal silicon layer 13 and N-shaped amorphous silicon layer 14 can be set to 5nm or more and 20nm or less.
When forming a film using plasma CVD method, the temperature of N-shaped monocrystalline silicon substrate 11 is preferably maintained 220 DEG C or less.Such as The temperature of N-shaped monocrystalline silicon substrate 11 is maintained 220 DEG C hereinafter, being then not susceptible to when forming a film using plasma CVD method by fruit Performance deterioration, is easy to get the solar battery cell of excellent power generation performance.
I-type amorphous silicon layer 12, p-type amorphous silicon layer 13 and N-shaped amorphous silicon layer 14 can be respectively by a kind of amorphous semiconductors It constitutes, can also be made of the combination of amorphous semiconductor of more than two kinds.As amorphous semiconductor, can enumerate amorphous silicon, Noncrystalline silicon carbide, amorphous silicon germanium etc., but these are not limited to, other siliceous amorphous semiconductors also can be used.
Then, by sputtering method or ion plating method, on p-type amorphous silicon layer 13 and N-shaped amorphous silicon layer 14 respectively It is formed transparent conductive film layer 15 (light receiving side and back side), obtains semiconductor substrate 1 (referring to Fig. 4).Transparent conductive film layer 15 (light receiving side and back sides) are for example made of indium tin oxide (ITO), thickness be, for example, 70nm or more and 100nm with Under.
Usually by physical vaporous deposition (PVD) carry out transparent conductive film layer 15 (light receiving side and back side) at Film, but it is not limited to PVD, the physical vapor depositions such as sputtering, ion plating, electron beam evaporation plating, vacuum evaporation also can be used And the chemical vapor depositions such as atmospheric pressure cvd method, decompression CVD method, plasma CVD method.
In addition, other than using ITO, indium tungsten can also be used to aoxidize as the material for constituting transparent conductive film layer 15 The metal oxides such as object (IWO), indium-zinc oxide (IZO), indium gallium zinc oxide (IGZO), aluminium zinc oxide (AZO).
Then, following to form 2 (light receiving side of insulating layer on two interareas of the semiconductor substrate 1 obtained as described above And back side).Firstly, as shown in figure 5, a part of region in the interarea of semiconductor substrate 1, it will by print process Film-like is coated by the fluid resin of active energy ray-curable, forms the 5 (printer of resin layer being made of fluid resin Sequence).
Insulating layer 2 has opening portion 2a, so needing to be formed in printing process to be capable of forming with the exhausted of opening portion 2a The resin layer 5 of the pattern of edge layer 2, so that in insulating layer when insulating layer 2 is made by active energy ray-curable resin layer 5 2 form opening portion 2a.That is, being formed in printing process has opening portion 5a and with insulating layer 2 substantially in the resin of same shape Layer 5 (referring to Fig. 5).
The type of print process is not particularly limited, and letterpress printing method, gravure printing method, lithography, hole can be used Version printing method etc., wherein it is preferred that porous printing method.Moreover, if the formation of opening portion 5a is considered, from life in porous printing method From the aspect of yield, printing precision, particularly preferred silk screen print method.
For the type of fluid resin, as long as having can be reacted simultaneously by the irradiation of active energy beam Cured property, just there is no particular limitation, and it is, for example, possible to use have (methyl) acryloyl group, (methyl) allyl, alkene Base, sulfydryl isoreactivity functional group resin.Also, the resin with sulfydryl and ethylenic unsaturated bond also can be used.At this Among a little, preferably with (methyl) acrylic resin of (methyl) acryloyl group.Also, consider that the weatherability of insulating layer 2 is then excellent It selects in the skeleton of fluid resin and considers the skeleton of the durability of solar battery cell then preferred fluid resin there is no aromatic rings In there are aliphatic alkyl and/or alicyclic alkyls.In addition, " (methyl) acryloyl group " refers to " methylacryloyl and/or third Enoyl- ", " (methyl) allyl " refer to " methacrylic and/or allyl ".
For fluid resin, in order to form the resin layer 5 with above-mentioned pattern by print process, preferably have predetermined Viscosity.That is, the viscosity at 25 DEG C of fluid resin is preferably 1Pas or more and 200Pas hereinafter, more preferably 10Pa S or more and 180Pas hereinafter, further preferably 10Pas or more and 150Pas hereinafter, particularly preferably 30Pas with Upper and 150Pas is hereinafter, most preferably 30Pas or more and 130Pas or less.
When viscosity at 25 DEG C of fluid resin is 1Pas or more, it is not likely to produce the outflow of fluid resin, passes through printing The shape for the resin layer 5 that method is formed is unlikely to deform, and is in addition to this also easy to form the big resin layer 5 of thickness.On the other hand, liquid When viscosity at 25 DEG C of resin is 200Pas or less, the transferability to semiconductor substrate 1 of fluid resin is excellent, also, The tendency in cavity and pin hole is formed there are also being not easy in resin layer 5.
In addition, the viscosity at 25 DEG C of fluid resin is measured as follows using rotary-type viscosimeter.To Brookfield The cone plate type viscosimeter (type of viscosimeter: DV-II+Pro, the model of main shaft: CPE-52) of corporation is packed into fluid resin 0.5mL, in 25.0 DEG C of temperature, rotation speed 3.0min-1, shear velocity 6s-1Under conditions of measure viscosity.It is opened using from measurement The viscosity for beginning to measure after 7 minutes is as measured value.
In fluid resin, in order to improve the various performances of resin layer 5 or insulating layer 2, addition can be added according to expectation Agent (for example, resin, solvent other than Photoepolymerizationinitiater initiater, antioxidant, reinforcement material, fluid resin).I.e., it is possible to partly leading A part of region in the interarea of structure base board 1 will be mixed with the resin composition of fluid resin and additive by print process Film-like forms the resin layer 5 being made of resin combination.
Then, after forming the resin layer 5 being made of fluid resin on two interareas of semiconductor substrate 1, to resin layer 5 Overall exposure active energy beam (such as ultraviolet light) solidifies fluid resin (curing process).So, in semiconductor substrate The insulating layer 2 being made of the solidfied material of fluid resin is formed on 1 two interareas.Resin layer 5 becomes opening portion 2a after having solidification Opening portion 5a the insulating layer 2 (referring to Fig. 6) with opening portion 2a is therefore formed on two interareas of semiconductor substrate 1.Half A part of opening 2a on the surface of the transparent conductive film layer 15 of conductor substrate 1 exposes from insulating layer 2.
Insulating layer 2 plays a role in plating process later as the mask for preventing plating envelope from being formed, in addition to this, Since the intensity of the semiconductor substrate 1 and being formed with insulating layer 2 on two interareas in semiconductor substrate 1 is improved, so Also play a role as the crackle of inhibition semiconductor substrate 1, the strengthening part of notch.Therefore, it is able to suppress when fixture is set The crackle etc. of semiconductor substrate 1 improves yield rate.Also, even if crack in semiconductor substrate 1, notch in the case where, It can inhibit the disconnection of semiconductor substrate 1 by insulating layer 2.
The thickness of insulating layer 2 is not particularly limited, preferably 5 μm or more and 100 μm or less.Therefore, the thickness of resin layer 5 The thickness that degree is preferably set to the insulating layer 2 for being solidified to form fluid resin becomes 5 μm or less and 100 μm of thickness below.Absolutely Edge layer 2 with a thickness of in above range when, obtain following effect: with enough plating solution patience and have do not interfere power generation foot Enough transparencys.
In addition, N-shaped monocrystalline silicon substrate 11 of the surface of transparent conductive film layer 15 (light receiving side and back side) because of lower layer Texture influence and concave-convex surface, but in the surface of insulating layer 2 (light receiving side and back side) and transparent conductive film layer The surface (inner surface) of 15 (light receiving side and back side) opposite sides be formed as with transparent conductive film layer 15 (light receiving side and Back side) the corresponding shape in concavo-convex surface, the light receiving side in the surface of insulating layer 2 (light receiving side and back side) Surface (outer surface) and the surface (outer surface) of back side be smoothly formed.
When foring insulating layer by common CVD method etc., because the film thickness of insulating layer is thin, so being easy by N-shaped monocrystalline The influence of the texture of silicon substrate 11, and defect is generated in the concave-convex apex of texture, bottom.In contrast, implement first In the manufacturing method of the solar battery cell of mode, silk screen print method is used in the formation of insulating layer 2, so being capable of forming The insulating layer 2 for filling the concave-convex bottom of texture and the thick film thickness of the apex of covering bumps, forms smooth surface (appearance Face) insulating layer 2.
About the type of active energy beam, it is not particularly limited, can makes as long as reactive species can be generated free radicals It is the ionization radial line as ultraviolet light, electron beam, X-ray, alpha ray, β ray, gamma-rays and microwave, high frequency waves, visible Light, near infrared ray, infrared ray, laser etc..In these active energy beams, preferably ultraviolet light, visible light, near infrared ray, more It is preferred that ultraviolet light and visible light, further preferred light with violet rays line.
Therefore, can be preferably capable by the fluid resin of active energy ray-curable to ultraviolet light, visible light and At least one kind of photosensitive and cured light-cured resin near infrared ray, more preferably can be in ultraviolet light and visible light At least one party is photosensitive and cured light-cured resin, further preferably can be photosensitive to light with violet rays line and cured Light-cured resin.
As generate ultraviolet light light source, for example, can enumerate extra-high-pressure mercury vapour lamp, high-pressure mercury-vapor lamp, middle medium pressure mercury lamp, Cooper-Hewitt lamp, metal halide lamp, xenon lamp, LED light, halogen lamp, carbon arc lamp, helium cadmium laser, YAG laser, quasi- point Sub- laser, argon laser etc..In these, preferably extra-high-pressure mercury vapour lamp, high-pressure mercury-vapor lamp, middle medium pressure mercury lamp, low-pressure mercury Lamp, metal halide lamp, LED light, more preferable extra-high-pressure mercury vapour lamp, high-pressure mercury-vapor lamp, metal halide lamp, LED light.
In addition, the irradiation (solidification of fluid resin) of the active energy beam in curing process can be with a stage into Row is also segmented into multiple stages progress.For example, can be in the irradiation of first stage after precuring fluid resin, Formal solidification is carried out in irradiation after two stages.When multiple stages being divided to carry out the solidification of fluid resins, it can prevent from solidifying The flowing of fluid resin in process stablizes printed patterns, moreover, be able to suppress the cure shrinkage of fluid resin, reduce because The internal stress for the semiconductor substrate that cure shrinkage generates.
The light source of active energy beam used in irradiation as first stage solidifies from fluid resin is able to suppress When the aspect that rises of temperature set out, compared with high-pressure mercury-vapor lamp, preferred LED light (for example, wavelength 300nm or 365nm).
In addition, the temperature of the semiconductor substrate in curing process is preferably 10 DEG C or more.Also, from preventing fluid resin From the perspective of flowing, the temperature of the semiconductor substrate in curing process be preferably 200 DEG C hereinafter, more preferably 150 DEG C hereinafter, Further preferably 120 DEG C or less.
Then, plating (plating work is implemented to the semiconductor substrate 1 for being formed with insulating layer 2 (light receiving side and back side) Sequence).When by plating to form electrode, need to cover plating object with insulant, in the part that should form electrode Partial sterility plating in addition is applied.Two interareas of semiconductor substrate 1 are covered by insulating layer 2 (light receiving side and back side), The part that electrode 3 should be formed is provided with opening portion 2a, so the semiconductor substrate 1 that opening 2a exposes from insulating layer 2 Exposed surface is carried out plating, forms electrode 3.As a result, in the opening portion 2a of insulating layer 2, half is connected to by plating formation The electrode 3 of the exposed surface of conductor substrate 1 (referring to Fig. 7).
Fig. 7, which shows to form, constitutes nickel plating layer 3a, the copper plating layer 3b of electrode 3 and most lower in tin plating layer 3c The state in the stage of the nickel plating layer 3a of layer.As described below, if then the formation of nickel plating layer 3a is formed by plating Copper plating layer 3b and tin plating layer 3c, then obtain being formed with bus bar electrode in the light-receiving surface of semiconductor substrate 1 and the back side 31 and finger electrodes 32 Fig. 1 solar battery cell.In general, in the light-receiving surface of semiconductor substrate 1 and the back side while reality Plating is applied, but can also implement plating respectively.
Plating is implemented in the opening portion of the insulating layer thin to film thickness, then plating envelope is not only in thickness direction, with thickness side It is also grown on orthogonal direction, therefore, the width of electrode becomes larger and is possible to generate shading loss.In contrast, first is real In the manufacturing method for applying the solar battery cell of mode, the film thickness of insulating layer 2 is 5 μm or more and 100 μm hereinafter, therefore plating Envelope is difficult to grow up in the side orthogonal with thickness direction, can be realized the graph thinning of electrode 3.
Moreover, when forming insulating layer, in order to form the insulating layer of thick film thickness, being needed longer by common CVD method etc. Time, it is difficult to form the insulating layer of 1 μm or more of film thickness.In contrast, solar battery cell according to first embodiment Manufacturing method do not need the insulating layer that the long period is just capable of forming thick film thickness then to form insulating layer, therefore easy to form cover The thicker insulating layer of the film thickness of the concave-convex apex of lid texture.
The type of plating is not particularly limited, for example, can be used melting plating, gas phase plating, galvanoplastic, Electroless plating method (i.e. electroless plating method) etc..In these plating, more preferable galvanoplastic, electroless plating method, can be to being intended to reality When the deposited position of plating is powered, from the viewpoint of productivity, particularly preferred galvanoplastic.
The type of metal for constituting electrode 3 is not particularly limited, for example, can be used copper (Cu), nickel (Ni), tin (Sn), Silver (Ag), cobalt (Co), zinc (Zn), palladium (Pd) and indium (In) etc., alloy or salt containing these metals.Metal can be used alone 1 kind, two or more use can also be combined.
Electrode 3 is made of the metal film formed by plating, can be made of a metal film, can also be by layer Folded multiple metal films are constituted.In the solar battery cell of first embodiment, as shown in Figure 1, electrode 3 be by be laminated three What metal film 3a, 3b, 3c of layer were constituted.That is, firstly, being exposed in opening 2a from insulating layer 2 by implementing nickel plating The nickel plating layer 3a as first layer is formed in the exposed surface (surface of transparent conductive film layer 15) of semiconductor substrate 1.Nickel plating The thickness of layer 3a for example can be 0.1 μm or more and 5 μm or less.Furthermore, it is possible to form nickel alloy plating layer to replace nickel plating Layer 3a.
Secondly, forming the copper plating layer 3b as the second layer on nickel plating layer 3a.The thickness of copper plating layer 3b is for example It can be 5 μm or more and 50 μm or less.In the example of Fig. 1, opening portion 2a is filled with nickel plating layer 3a and copper plating layer 3b.So Afterwards, the tin plating layer 3c as third layer is formed on copper plating layer 3b.The thickness of tin plating layer 3c for example can for 1 μm with It is upper and 5 μm or less.Furthermore, it is possible to form nickel plating layer to replace tin plating layer 3c.
In the solar battery cell of first embodiment, the conduct in three metal films 3a, 3b, 3c of electrode 3 is constituted The nickel plating layer 3a of first layer in order to prevent copper migration and formed.In addition, the tin plating layer 3c as third layer be in order to It prevents the oxidation as the copper plating layer 3b of the second layer and is formed.The number of metal film for constituting electrode 3 is preferably 2 or 3, can be with Copper plating layer 3b is not formed, and the double-layer structure of nickel plating layer 3a/ tin plating layer 3c is made.
Though electrode 3 be the case where composition a metal film or as first embodiment solar battery cell that The case where sample is made of the multiple metal films being laminated, the thickness of electrode 3 are preferably 0.1 μm or more and 100 μm hereinafter, more preferably 5 μm or more and 70 μm hereinafter, further preferably 6 μm or more and 60 μm or less.Electrode 3 with a thickness of in above-mentioned range when, Can obtain following effect: plating time will not be extremely elongated and can be suppressed to resistance low.
As described above, have will by print process for the manufacturing method of the solar battery cell of first embodiment It is coated on the process that presumptive area forms insulating layer 2 by the fluid resin of active energy ray-curable, therefore there is no warps The necessity of light irradiation is selectively carried out by presumptive area of the photomask to resin layer and will not solidified with organic solvent The necessity that is removed of light-cured resin.Therefore, the manufacturing method of the solar battery cell of first embodiment Process is simple, production is high, and the organic solvent high without using volatility, thus environmental pressure is small.
After plating process, solar battery cell can be implemented to be heat-treated.By to solar battery cell reality The close property between transparent conductive film layer 15 and the electrode 3 for passing through plating formation can be improved in heat applying treatment, can will contact electricity Resistance remains lower.The condition of heat treatment is not particularly limited, for example, can enumerate 50 DEG C or more (more preferably 80 DEG C with On) and 200 DEG C or less (more preferably 180 DEG C or less) at a temperature of, heating 3 minutes or more and 60 minutes or less (preferably 5 points It is more than clock and 15 minutes or less) time heat treatment.As the method for heating solar battery unit, can enumerate in warm water or Impregnated in oil, brush hot wind, heat in furnace etc..
The heat treatment can carry out after foring the most surface layer in the multiple metal films for constituting electrode 3, can also be Other layers are formd to carry out later.For example, in the solar battery cell of first embodiment, it can be real after forming third layer Heat applying treatment can also implement heat treatment after forming first layer, after forming the second layer.Moreover, the implementation number of the heat treatment It can be 1 time, be also possible to repeatedly.For example, in the solar battery cell of first embodiment, can formed first layer, Implement 1 heat treatment after any one layer in the second layer, third layer, can also formed first layer, the second layer, third layer it Implement heat treatment respectively afterwards, implements 3 heat treatment altogether.
(second embodiment)
The solar battery cell of second embodiment and its manufacturing method are illustrated below, for implementing with first The identical part of solar battery cell and its manufacturing method of mode, is essentially omitted its explanation, is carried out based on different piece Explanation.
In the solar battery cell of second embodiment shown in Fig. 8~10, light-receiving surface (being the face of upside in Fig. 8) Have bus bar electrode 31 and finger electrodes 32, overleaf (being the face of downside in Fig. 8) has rear electrode 33.
That is, in the light-receiving surface of the solar battery cell of second embodiment, as shown in figure 9, being configured with linearly Linear finger electrodes 32 are configured in the mode orthogonal with bus bar electrode 31 while bus bar electrode 31.Also, the In the back side of the solar battery cell of two embodiments, as shown in Figure 10, rear electrode 33 is configured in basic whole face.
The solar battery cell of second embodiment has: semiconductor substrate 1；It is formed in the light of semiconductor substrate 1 The insulating layer 2 of translucency on the interarea of surface side；And it is connected to electrode 3 (light receiving side and the back side of semiconductor substrate 1 Side).Insulating layer 2 has opening portion 2a.The electrode 3 of light receiving side is configured in the 2a of opening portion, be connected to opening 2a from The exposed surface for the semiconductor substrate 1 that insulating layer 2 exposes constitutes bus bar electrode 31 and finger electrodes by electrode 3 in light-receiving surface 32.Also, the interarea substantially entire surface that the electrode 3 of back side covers the back side of semiconductor substrate 1 is overleaf made of electrode 3 Rear electrode 33.
The case where with first embodiment, is same, and semiconductor substrate 1 has: being formed with the recessed of referred to as texture in two interareas The N-shaped monocrystalline silicon substrate 11 of male structure；12 (the light-receiving surface of i-type amorphous silicon layer being laminated on two interareas of N-shaped monocrystalline silicon substrate 11 Side and back side)；The p-type amorphous silicon layer 13 being laminated in the i-type amorphous silicon layer 12 of light receiving side；It is laminated in the i of back side N-shaped amorphous silicon layer 14 on type amorphous silicon layer 12；And be respectively laminated on p-type amorphous silicon layer 13 and N-shaped amorphous silicon layer 14 it On transparent conductive film layer 15 (light receiving side and back side) (referring to Fig. 8).
The electrode 3 of back side is connected to the substantially entire surface of the transparent conductive film layer 15 on the most surface layer of semiconductor substrate 1.And And the electrode 3 for the light receiving side being configured in the 2a of opening portion be connected to opening 2a expose from insulating layer 2 it is semiconductor-based Exposed surface, that is, transparent conductive film layer 15 of plate 1.In second embodiment, transparent lead is formed on the most surface layer of semiconductor substrate 1 Electrolemma layer 15, therefore opening 2a and the exposed surface of semiconductor substrate 1 exposed are the surface of transparent conductive film layer 15, but When most surface layer is formed with the layer of other types, the surface on the most surface layer becomes exposed surface.
The electrode 3 of light receiving side and the electrode 3 of back side are made of the metal film formed by plating.The example of Fig. 8 In son, with first embodiment the case where is same, and electrode 3 is made of three layers of metal film being laminated.That is, transparent conductive film It is laminated with nickel plating layer 3a on layer 15, copper plating layer 3b is laminated on nickel plating layer 3a, is laminated with tin on copper plating layer 3b Plating layer 3c.
Then, referring to Fig.1 1~14, the manufacturing method of the solar battery cell of second embodiment is illustrated.
Firstly, obtaining semiconductor substrate 1 (referring to Fig.1 1) in the same manner as first embodiment.Secondly, in semiconductor substrate Insulating layer 2 is formed on the interarea of 1 light receiving side as follows.Firstly, as shown in figure 12, in the light receiving side of semiconductor substrate 1 A part of region in interarea will coat film-like by the fluid resin of active energy ray-curable by print process, Form the resin layer 5 (printing process) being made of fluid resin.Resin is not formed on the interarea of the back side of semiconductor substrate 1 Layer 5.
Insulating layer 2 has opening portion 2a, so needing to be formed in printing process to be capable of forming with the exhausted of opening portion 2a The resin layer 5 of the pattern of edge layer 2, so that in insulating layer when insulating layer 2 is made by active energy ray-curable resin layer 5 2 form opening portion 2a.That is, being formed in printing process has opening portion 5a and the resin with insulating layer 2 for essentially identical shape 5 (referring to Fig.1 2) of layer.
Then, after forming the resin layer 5 being made of fluid resin on the interarea of the light receiving side of semiconductor substrate 1, to The overall exposure active energy beam (such as ultraviolet light) of resin layer 5 solidifies fluid resin (curing process).It is partly leading as a result, The insulating layer 2 being made of the solidfied material of fluid resin is formed on the interarea of the light receiving side of structure base board 1.Resin layer 5 has solidification Become the opening portion 5a of opening portion 2a afterwards, therefore, being formed on the interarea of the light receiving side of semiconductor substrate 1 has opening portion 2a Insulating layer 2 (referring to Fig.1 3).The a part on the surface of the transparent conductive film layer 15 of the light receiving side of semiconductor substrate 1 is by opening Oral area 2a exposes from insulating layer 2.
In addition, in this second embodiment also with the first embodiment the case where in the same manner as, the active energy in curing process The irradiation (solidification of fluid resin) for measuring ray can be carried out with a stage, also be segmented into multiple stages progress.For example, can After the precuring fluid resin in the irradiation of first stage, formal solidification is carried out in the irradiation after second stage. If being divided into the solidification of multiple stages progress fluid resins, the flowing of the fluid resin in curing process can be prevented, makes to print Map brushing case is stablized, and is able to suppress the cure shrinkage of fluid resin, reduces in the semiconductor substrate generated by cure shrinkage Portion's stress.
In this second embodiment, the light source of active energy beam used in the irradiation as first stage, from energy The point that temperature when enough fluid resin being inhibited to solidify rises sets out, compared with high-pressure mercury-vapor lamp, it is also preferred that LED light is (for example, wavelength 300nm or 365nm).
In addition, the temperature of the semiconductor substrate in curing process is preferably 10 DEG C or more.Also, from preventing fluid resin From the perspective of flowing, the temperature of the semiconductor substrate in curing process be preferably 200 DEG C hereinafter, more preferably 150 DEG C hereinafter, Further preferably 120 DEG C or less.
Insulating layer 2 plays a role in plating process later as the mask for the formation for preventing plating envelope, except this it Outside, because the intensity of semiconductor substrate 1 obtains and being formed with insulating layer 2 on the interarea in the light receiving side of semiconductor substrate 1 To improve, so also playing a role as the crackle of inhibition semiconductor substrate 1, the strengthening part of notch.Therefore, it is able to suppress and sets The crackle etc. of semiconductor substrate 1 when setting fixture improves yield rate.Also, even if cracking in semiconductor substrate 1, notch In the case where, also inhibit the disconnection of semiconductor substrate 1.
Then, to implementation plating (the plating work of semiconductor substrate 1 for being only formed with insulating layer 2 in the interarea of light receiving side Sequence).The interarea of the light receiving side of semiconductor substrate 1 is covered by insulating layer 2, and the part that should form electrode 3 is provided with opening portion 2a, so for the interarea of light receiving side, it is real in the exposed surface for the semiconductor substrate 1 that opening 2a exposes from insulating layer 2 Plating is applied, and electrode 3 is formed.It is formed in the opening portion 2a of insulating layer 2 by plating as a result, and is connected to semiconductor substrate 1 The electrode 3 of exposed surface (referring to Fig. 8,14).For the interarea of back side, it is carried out plating in basic whole face, forms electrode 3.And And using the electrode 3 formed by plating, busbar is formed in the light-receiving surface (being the face of upside in Fig. 8) of semiconductor substrate 1 Electrode 31 and finger electrodes 32, overleaf (being the face of downside in Fig. 8) forms rear electrode 33.
Electrode 3 is made of the metal film formed by plating, can be made of a metal film, can also be by layer Folded multiple metal films are constituted.In the solar battery cell of second embodiment, as shown in figure 8, electrode 3 by be laminated three Metal film 3a, 3b, 3c of layer are constituted.That is, implement nickel plating firstly, passing through, half exposed in opening 2a from insulating layer 2 The nickel plating layer 3a as first layer is formed in the exposed surface (surface of transparent conductive film layer 15) of conductor substrate 1 (referring to figure 14).Secondly, forming the copper plating layer 3b as the second layer on nickel plating layer 3a.Then, the shape on copper plating layer 3b At the tin plating layer 3c as third layer.
After plating process, can also be with the first embodiment the case where in the same manner as, solar battery cell is implemented Heat treatment.By implementing to be heat-treated to solar battery cell, transparent conductive film layer 15 can be improved and by plating formation Close property between electrode 3 can remain contact resistance lower.In the same manner as with the first embodiment the case where, at the heat Reason can carry out after the most surface layer formed in the multiple metal films for constituting electrode 3, can also form progress after other layers. In addition, the implementation number of the heat treatment can be 1 time, or repeatedly in the same manner as with the first embodiment the case where.
In addition, the first and second above-mentioned embodiments instantiate an example of the invention, the present invention is not limited to One and second embodiment.And it is possible to be applied in the range of not departing from the purpose of the present invention to the first and second embodiments Add various changes and modifications, the mode for being applied with such changes and modifications also may include in the present invention.
For example, the material illustrated in the first and second embodiments, size etc. are all an examples, the present invention is not limited In this, it can be suitably changed and be implemented in the range of obtaining effect of the invention.
In addition, in order to be used as solar battery cell, being needed in the case where insulating layer 2 does not have translucency Stripping insulation layer 2 after plating process, but since the insulating layer of the solar battery cell of the first and second embodiments 2 has Translucency, it is therefore not necessary to stripping insulation layer 2.Therefore, the manufacturing process of solar battery cell can be simplified.
Moreover, in the first and second embodiments, will be laminated on N-shaped monocrystalline silicon substrate 11 i-type amorphous silicon layer 12, The substrate of p-type amorphous silicon layer 13, N-shaped amorphous silicon layer 14 etc. can also replace N-shaped monocrystalline silicon substrate as semiconductor substrate 1 Plate 11, and use N-shaped polycrystalline silicon substrate, p-type monocrystalline silicon substrate, p-type substrate etc..
Also, p-type amorphous silicon in the first and second embodiments, is configured in the light receiving side of N-shaped monocrystalline silicon substrate 11 Layer 13, overleaf side configures N-shaped amorphous silicon layer 14, however, it is possible in contrast to this in the light receiving side of N-shaped monocrystalline silicon substrate 11 N-shaped amorphous silicon layer 14 is configured, overleaf side configures p-type amorphous silicon layer 13.Alternatively, can be in the light of N-shaped monocrystalline silicon substrate 11 Surface side configures p-type doping layer, and overleaf side is with the doped layer of pectination configuration and the impurity of 11 same conductivity of N-shaped monocrystalline silicon substrate With the doped layer (so-called back junction solar battery cell) of the impurity of different conductivity types.
(embodiment)
Embodiment described below is more specifically illustrated the present invention.
(embodiment 1)
Being formed with the N-shaped monocrystalline silicon substrate of the referred to as concaveconvex structure of texture in two interareas, (shape of substrate is The square of 156mm) two interareas on, using the plasma CVD of stimulating frequency 13.56MHz, with 200 DEG C of substrates below Temperature forms i-type amorphous silicon layer, then, forms p-type amorphous silicon layer in the i-type amorphous silicon layer of light receiving side respectively, overleaf N-shaped amorphous silicon layer is formed in the i-type amorphous silicon layer of side.
It, will be with the silane (SiH of diluted in hydrogen in the formation of i-type amorphous silicon layer4) used as unstrpped gas, i type amorphous The deposition velocity of silicon layer is about 0.3nm/s.Also, it, will be with the diborane (B of diluted in hydrogen when the formation of p-type amorphous silicon layer2H6) with Above-mentioned raw materials gas is used together as impurity gas, will be with the phosphine (PH of diluted in hydrogen in the formation of N-shaped amorphous silicon layer3) with Above-mentioned raw materials gas is used together as impurity gas.
Then, it by sputtering, is respectively formed on p-type amorphous silicon layer and N-shaped amorphous silicon layer as transparent conductive film layer Ito thin film has obtained semiconductor substrate.Argon (Ar) and oxygen (O are used as carrier gas2) mixed gas (O2Concentration 0.25%), with Film pressure 13.3 × 10-1Pa, power 20W (film forming speed 5nm/min) condition carried out the sputtering of ito thin film.
Then, using screen printing plate and Showa Denko K. K Photocurable resin composition (class name: HMR-218 (alkenyl based resin composition), the viscosity 90Pas at 25.0 DEG C), silk-screen printing is carried out, by light-cured resin Composition coats film-like in two interareas of semiconductor substrate, forms the resin layer being made of Photocurable resin composition. It is not coated by Photocurable resin composition on the part that should form electrode in the interarea of semiconductor substrate, electrode should formed Part other than part on coat Photocurable resin composition, thus form and can be formed in the part that should form electrode The resin layer of the pattern of insulating layer with opening portion.
It is formed after resin layer using high-pressure mercury-vapor lamp exposure machine to resin layer irradiation light, consolidates Photocurable resin composition Change and forms insulating layer.Foring as a result, in two interareas of semiconductor substrate has opening portion in the part that should form electrode Insulating layer.Solidify semiconductor when Photocurable resin composition to resin layer irradiation light using high-pressure mercury-vapor lamp exposure machine The temperature of substrate, is measured using non-contact thermometer, and result is 60 DEG C.In addition, the irradiation of high-pressure mercury-vapor lamp exposure machine Condition is that the maximal illumination in terms of the measured value of wavelength 365nm, in irradiation is 200mW/cm2, accumulated exposure amount is 1000mJ/ cm2。
Then, plating is implemented to two interareas of semiconductor substrate, forms to be connected in the opening portion of insulating layer and passes through The electrode of the exposed surface for the semiconductor substrate that opening portion is exposed from insulating layer.Plating is with the sequence of nickel plating, copper plating, tin plating Points of 3 stages carry out, and form about 40 μm of width be made of nickel plating layer, copper plating layer, tin plating layer this three-layered metal film Electrode (bus bar electrode and finger electrodes).Result in the sun same as solar battery cell shown in FIG. 1 It can battery unit.
In addition, the condition of plating is as follows.Firstly, using nickel-plating bath, with 0.5A/dm2, 40 DEG C of temperature condition implement It after plating in 15 minutes, is cleaned with warm water, is then cleaned with cold water.Secondly, using plating solution for copper-plating used, with 3A/ dm2, room temperature condition implement plating in 7 minutes after, cleaned with cold water.Then, using Tin plating electrolyte, with 2.5A/dm2, room temperature condition implement plating in 7 minutes after, cleaned with cold water.
(embodiment 2)
In addition to 2 points below, manufactured similarly to Example 1 it is identical with solar battery cell shown in FIG. 1 too Positive energy battery unit.Firstly, the 1st point of difference is as follows.In embodiment 1, the width of the electrode formed in plating process is about 40 μm, and in embodiment 2 it is about 55 μm.
Secondly, the 2nd point of difference is as follows.In embodiment 1, in curing process to resin layer with a stage irradiation light And solidify Photocurable resin composition with a stage, and in example 2, in curing process, to resin Layer is divided into two stage irradiation lights and so that Photocurable resin composition is divided into two stages and solidified.
Specifically, using LED light (wavelength 365nm) to carry out the illumination of first stage as light source in embodiment 2 It penetrates, high-pressure mercury-vapor lamp exposure machine is then used to carry out the light irradiation of second stage as light source.
The light irradiation condition of LED light is that the maximal illumination in terms of the measured value of wavelength 365nm, in irradiation is 500mW/cm2, Accumulated exposure amount is 500mJ/cm2, with non-contact thermometer measures irradiation light and when solidifying Photocurable resin composition The result of the temperature of semiconductor substrate is 35 DEG C.
The irradiation condition of high-pressure mercury-vapor lamp exposure machine is that the maximal illumination in terms of the measured value of wavelength 365nm, in irradiation is 200mW/cm2, accumulated exposure amount is 1000mJ/cm2, with non-contact thermometer measures irradiation light and solidifies light-cured resin The result of the temperature of semiconductor substrate when composition is 60 DEG C.
Due to the photograph for having carried out LED light (wavelength 365nm) in advance before the irradiation for carrying out high-pressure mercury-vapor lamp exposure machine It penetrates, the flowing of resin layer is reduced, and the width of resin layer becomes smaller, and as a result the width of electrode increases.
The explanation of appended drawing reference
1 semiconductor substrate；2 insulating layers；The opening portion 2a；3 electrodes；3a nickel plating layer；3b copper plating layer；3c tin plating layer；5 Resin layer；The opening portion 5a；11n type monocrystalline silicon substrate；12i type amorphous silicon layer；13p type amorphous silicon layer；14n type amorphous silicon layer；15 Transparent conductive film layer；31 bus bar electrodes；32 finger electrodes；33 rear electrodes.

Claims (11)

1. a kind of manufacturing method of solar battery cell, for manufacturing solar battery cell, the solar battery cell Have semiconductor substrate, the insulating layer being formed on the interarea of the semiconductor substrate and connect with the semiconductor substrate Electrode, the insulating layer have an opening portion, the electrode configuration in the opening portion and with by the opening portion from institute The exposed surface connection of the semiconductor substrate of insulating layer exposing is stated,
The manufacturing method includes:
Printing process, will be by the fluid resin of active energy ray-curable to the semiconductor substrate by print process A part of region coating film-like in interarea forms resin layer by the fluid resin, and the resin layer, which has, to be capable of forming The pattern of the insulating layer；
Curing process irradiates active energy beam to the resin layer and solidifies the fluid resin, described semiconductor-based The insulating layer being made of the solidfied material of the fluid resin is formed on the interarea of plate；And
Plating process forms the exposed surface with the semiconductor substrate by plating in the opening portion of the insulating layer The electrode of connection.
2. the manufacturing method of solar battery cell according to claim 1,
The print process includes silk screen print method.
3. the manufacturing method of solar battery cell according to claim 1 or 2,
Viscosity at 25 DEG C of the fluid resin is 1Pas or more and 200Pas or less.
4. the manufacturing method of solar battery cell described in any one of claim 1 to 3,
The insulating layer with a thickness of 5 μm or more and 100 μm or less.
5. the manufacturing method of solar battery cell according to any one of claims 1 to 4,
The plating is galvanoplastic or electroless plating method.
6. the manufacturing method of solar battery cell according to any one of claims 1 to 5,
The electrode is made of at least one of copper, nickel, tin, silver, cobalt, zinc, palladium, indium and their alloy.
7. the manufacturing method of solar battery cell described according to claim 1~any one of 6,
The electrode with a thickness of 0.1 μm or more and 100 μm or less.
8. the manufacturing method of solar battery cell according to any one of claims 1 to 7,
The electrode is made of multiple metal films of a metal film or stacking.
9. the manufacturing method of solar battery cell described according to claim 1~any one of 8,
In the curing process, the active energy beam point multiple stages are irradiated to the resin layer, are made described Fluid resin point multiple stages are solidified.
10. the manufacturing method of solar battery cell according to claim 9,
The light source of the active energy beam used in the irradiation of the first stage of the active energy beam is LED Lamp.
11. the manufacturing method of solar battery cell described according to claim 1~any one of 10,
In the curing process, the temperature of the semiconductor substrate when fluid resin solidifies is 200 DEG C or less.
CN201780057920.9A 2016-09-23 2017-09-13 The manufacturing method of solar battery cell Pending CN109804474A (en)

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Application publication date: 20190524