CN109801979A - A kind of silicon carbide PiN diode of large scale mesa structure and preparation method thereof - Google Patents
A kind of silicon carbide PiN diode of large scale mesa structure and preparation method thereof Download PDFInfo
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- CN109801979A CN109801979A CN201811650772.4A CN201811650772A CN109801979A CN 109801979 A CN109801979 A CN 109801979A CN 201811650772 A CN201811650772 A CN 201811650772A CN 109801979 A CN109801979 A CN 109801979A
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Abstract
The invention discloses silicon carbide PiN diode of a kind of large scale mesa structure and preparation method thereof, preparation method includes: the one doping type layer of growth regulation on the first doping type substrate；In the two doping type layer of surface growth regulation of the first doping type layer；It injects to form the second additional doping type layer on the surface of the second doping type layer；Step is formed by etching in device edge, step depth is greater than the second doping type thickness degree；First doping type substrate is carried out thinned；It is respectively formed anode electrode and cathode electrode.The present invention uses mesa structure, avoids the lithography requirements to fine lines；By injecting Second Type foreign ion on the second doping type layer and carrying out high-temperature annealing activation, the electric leakage of the chip due to caused by the types of material defect such as hole on the second doping type layer is avoided；By using strip or reticular structure Ohmic contact, blocking of the chip anode metal to incident optical signal and energetic ion is reduced.
Description
Technical field
The present invention relates to field of semiconductor devices, the silicon carbide PiN diode of especially a kind of large scale mesa structure and
Preparation method.
Background technique
It is widely used in fields, the detector such as nuclear science research and space exploration.Up to the present, various to answer
There are many nuclear radiation detector type, and working principle is also not quite similar.Detector is divided into track detector, gas from type
Bulk detector, scintillation detector and semiconductor detector.Compared with the gas detector generallyd use at present, semiconductor detector
Have many advantages, such as that energy resolution is high, time response is fast, the range of linearity is wide, small in size, operating voltage is lower.But it is conventional
Si (or Ge) semiconductor detector, which has, following is difficult to the shortcomings that overcoming: it is sensitive to radiation injury, after by some strength particle irradiation
Performance, which is gradually deteriorated, even to fail；Detector generally works under room temperature or cryogenic conditions, can not be competent under the high temperature conditions
Measure work；Detector operating voltage is relatively low, is easy breakdown.The breakdown electric field of a SiC magnitude higher than silicon, therefore
The voltage block layer of SiC device can have lesser thickness and more high-dopant concentration, for identical active layer thickness SiC electronics device
Part has higher operating voltage and lower leakage current, to realize higher detection accuracy.The forbidden bandwidth of SiC is nearly
3 times of silicon, room temperature assigns 3.2eV, and SiC device is allow to keep good device special under 250 DEG C~600 DEG C of operating temperature
Property.The maximum operating temperature of SiC device is at 500 DEG C or more, and the maximum operating temperature of silicon device only has 150 DEG C, GaAs device
The maximum operating temperature of part is also less than 250 DEG C.In addition, SiC has higher critical displacement energy (45~90eV), this makes SiC
With the ability that the impact of high anti-electromagnetic wave and high radiation preventing destroy, SiC nuclear detector may operate in higher irradiation dose.
Integrated mode can be spliced with mosaic and obtain the biggish SiC detector chip of sensitive area, but its manufacture craft
The middle protection problem that need to solve singulated die exposed side wall when splicing, and the gap between the multiple chips spliced is to detector
Key parameter adversely affects, it is therefore necessary to the production method for developing large area detector chip.Silicon carbide PiN diode
Production generallys use stepper, to form ion implantation mask figure fine needed for terminal protection structure, and stepping
The exposure range of formula litho machine generally passes through smaller, it is difficult to make requirement with meeting large size chip.SiC epitaxial material is still at present
Right defect concentration with higher, it is difficult to obtain large area area free from defect, it is empty the defects of will lead to pn-junction electric leakage.For side
Just the extraction of electrode, the anode of chip generally use thicker metal layer, the metal layer to incident photon or ion have compared with
Strong blocking capability.Photon or energetic ion may penetrate the epitaxial layer of chip, be captured by very thick substrate, the electric signal of generation
It may interfere with the detecting function of epitaxial layer.
Summary of the invention
The purpose of the present invention is to provide silicon carbide PiN diode of a kind of large scale mesa structure and preparation method thereof,
By the improvement of structure, detector sensitivity and working efficiency can be improved, so that the large size silicon-carbide PiN bis- invented
Pole pipe can be used in the fields such as high energy particle and ultraviolet detection.
Realize the technical solution of the object of the invention are as follows: a kind of silicon carbide PiN diode of large scale mesa structure, including the
One doping type substrate, is grown in the first doping type at the first doping type layer for being grown in the first doping type substrate surface
Second doping type layer of layer surface injects to form the second additional doping type layer on the surface of the second doping type layer；
Device edge forms step by etching, and step depth is greater than the second doping type thickness degree；
Second doping type layer surface is prepared with anode electrode, and the first doping type substrate bottom is prepared with cathode electrode,
Dielectric passivation is arranged in device upper surface, and the dielectric passivation does not cover anode electrode.
A kind of preparation method of the silicon carbide PiN diode of large scale mesa structure, comprising the following steps:
The one doping type layer of growth regulation on the first doping type substrate；
In the two doping type layer of surface growth regulation of the first doping type layer；
It injects to form the second additional doping type layer on the surface of the second doping type layer；
Step is formed by etching in device edge, step depth is greater than the second doping type thickness degree；
First doping type substrate is carried out thinned；
It is respectively formed anode electrode and cathode electrode, device surface forms dielectric passivation.
Compared with prior art, remarkable advantage of the invention are as follows: (1) carried out additionally on the surface of the second doping type layer
Ion implanting simultaneously carries out high temperature activation anneal, forms the second additional doping type layer, can be to avoid due to the second doping type
Chip caused by the types of material defect such as hole leaks electricity on layer；(2) it is performed etching at the edge of device, forms step terminations, this
Avoid conventional terminal, such as requirement of the floating field limiting ring to fine lines；(3) anode ohmic contact is strip or netted knot
Structure only covers regional area on chip table, the resistance it reduce chip anode metal to incident optical signal and energetic ion
Gear, improves the efficiency of detector.(4) by the way that the first doping type substrate is thinned, can reduce due to projection photon and
The noise signal that energetic ion generates in the substrate improves detector sensitivity.
Detailed description of the invention
Fig. 1 is the first doping type layer schematic diagram of growth.
Fig. 2 is the second doping type layer schematic diagram of growth.
Fig. 3 is that injection forms the second additional doping type layer schematic diagram.
Fig. 4 is that device edge etches to form step schematic diagram.
Fig. 5 is that device surface forms anode electrode and cathode electrode schematic diagram.
Fig. 6 is the silicon carbide PiN diode structure schematic diagram for the large scale mesa structure that preparation is completed.
Specific embodiment
A kind of silicon carbide PiN diode of large scale mesa structure, including the first doping type substrate 4, it is grown in first
The first doping type layer 3 on 4 surface of doping type substrate, the second doping type layer for being grown in 3 surface of the first doping type layer
21, it injects to form the second additional doping type layer 22 on the surface of the second doping type layer 21；
Device edge forms step by etching, and step depth is greater than 21 thickness of the second doping type layer, i.e., the second doping
21 surface of type layer is higher than 3 surface of the first doping type layer on periphery；
Second doping type layer, 21 surface is prepared with anode electrode 1, and 4 bottom of the first doping type substrate is prepared with cathode electricity
Dielectric passivation 6 is arranged in pole 5, device upper surface, and the dielectric passivation 6 does not cover anode electrode 1.
Anode electrode 1 is strip or reticular structure, and anode electrode 1 only covers mesa region.The dielectric passivation 6 is
SiO2。
As shown in figs 1 to 6, the present invention also provides a kind of preparation sides of the silicon carbide PiN diode of large scale mesa structure
Method, comprising the following steps:
The one doping type layer 3 of growth regulation on the first doping type substrate 4；
In the two doping type layer 21 of surface growth regulation of the first doping type layer 3；
It injects to form the second additional doping type layer 22 on the surface of the second doping type layer 21；
Step is formed by etching in device edge；
First doping type substrate 4 is carried out thinned；
It is respectively formed anode electrode 1 and cathode electrode 5, device surface forms dielectric passivation 6.
Further, ion implanting is carried out on the surface of the second doping type layer 21 and carry out high temperature activation anneal, formed
The second additional doping type layer 22.Anode electrode 1 is strip or reticular structure, and anode electrode 1 only covers mesa region.Institute
Stating dielectric passivation 6 is SiO2。
The present invention is described in detail with reference to the accompanying drawings and examples.
Embodiment
A kind of preparation method of the silicon carbide PiN diode of large scale mesa structure, comprising the following steps:
(1) the one doping type layer 3 of growth regulation on the first doping type substrate 4, as shown in Figure 1.First doping type lining
The non-silicon carbide substrates in bottom 4.
(2) in the two doping type layer 21 of surface growth regulation of the first doping type 3, as shown in Figure 2.
(3) ion implanting is carried out on the surface of the second doping type layer 21 and carry out high temperature activation anneal, formed additional
Second doping type layer 22, as shown in figure 3, the foreign ion of the second doping type is injected on the second doping type layer 21,
By high-temperature annealing activation implanted dopant, downward projection of part is formed；It can be to avoid due to hole on the second doping type layer
Etc. chip caused by types of material defect leak electricity.
(4) step is formed by etching in device edge, as shown in figure 4, this avoids conventional terminal, such as floating field limiting ring
Deng the requirement to fine lines, 2cm × 2cm or more large size chip system can be conveniently realized using contact photoetching machine
Make.
(5) the first doping type substrate 4 is thinned to required thickness, reduced due to projecting photon and energetic ion in substrate
The noise signal of middle generation improves detector sensitivity.
(6) it is respectively formed anode electrode 1 and cathode electrode 5, anode ohmic contact is strip or reticular structure, is only covered
Regional area on chip table, as shown in figure 5, the resistance it reduce chip anode metal to incident optical signal and energetic ion
Gear, improves the efficiency of detector；Device surface forms dielectric passivation 6, as shown in Figure 6.
Claims (9)
1. a kind of silicon carbide PiN diode of large scale mesa structure, which is characterized in that including the first doping type substrate (4),
It is grown in the first doping type layer (3) on first doping type substrate (4) surface, is grown in first doping type layer (3) surface
The second doping type layer (21), inject to form the second additional doping type layer on the surface of the second doping type layer (21)
(22)；
Device edge forms step by etching, and step depth is greater than second doping type layer (21) thickness；
Second doping type layer (21) surface is prepared with anode electrode (1), and first doping type substrate (4) bottom is prepared with cathode
Dielectric passivation (6) are arranged in electrode (5), device upper surface, and the dielectric passivation (6) does not cover anode electrode (1).
2. the silicon carbide PiN diode of large scale mesa structure according to claim 1, which is characterized in that anode electrode
It (1) is strip or reticular structure.
3. the silicon carbide PiN diode of large scale mesa structure according to claim 2, which is characterized in that anode electrode
(1) mesa region is only covered.
4. the silicon carbide PiN diode of large scale mesa structure according to claim 1, which is characterized in that dielectric passivation
It (6) is SiO2。
5. a kind of preparation method of the silicon carbide PiN diode of large scale mesa structure, which comprises the following steps:
The one doping type layer (3) of growth regulation on the first doping type substrate (4)；
In the two doping type layer (21) of surface growth regulation of the first doping type layer (3)；
It injects to form the second additional doping type layer (22) on the surface of the second doping type layer (21)；
Step is formed by etching in device edge, step depth is greater than second doping type layer (21) thickness；
First doping type substrate (4) is carried out thinned；
It is respectively formed anode electrode (1) and cathode electrode (5), device surface forms dielectric passivation (6).
6. the preparation method of the silicon carbide PiN diode of large scale mesa structure according to claim 5, feature exist
In carrying out ion implanting and carrying out high temperature activation anneal on the surface of the second doping type layer (21), form additional second and mix
Miscellaneous type layer (22).
7. the preparation method of the silicon carbide PiN diode of large scale mesa structure according to claim 5, feature exist
In anode electrode (1) is strip or reticular structure.
8. the preparation method of the silicon carbide PiN diode of large scale mesa structure according to claim 7, feature exist
In anode electrode (1) only covers mesa region.
9. the preparation method of the silicon carbide PiN diode of large scale mesa structure according to claim 5, feature exist
In dielectric passivation (6) is SiO2。
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Citations (4)
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| US20080197360A1 (en) * | 2007-02-16 | 2008-08-21 | Cree, Inc. | Diode Having Reduced On-resistance and Associated Method of Manufacture |
| CN104465676A (en) * | 2014-12-09 | 2015-03-25 | 厦门大学 | 4H-SiC PIN ultraviolet photodiode one-dimensional array chip and preparation method thereof |
| CN104882510A (en) * | 2015-06-04 | 2015-09-02 | 镇江镓芯光电科技有限公司 | Silicon carbide avalanche photodiode with novel small-dip-angle half mesa structure |
| CN107452831A (en) * | 2017-08-07 | 2017-12-08 | 中国电子科技集团公司第五十五研究所 | A kind of carborundum detection diode and preparation method |
-
2018
- 2018-12-31 CN CN201811650772.4A patent/CN109801979A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080197360A1 (en) * | 2007-02-16 | 2008-08-21 | Cree, Inc. | Diode Having Reduced On-resistance and Associated Method of Manufacture |
| CN104465676A (en) * | 2014-12-09 | 2015-03-25 | 厦门大学 | 4H-SiC PIN ultraviolet photodiode one-dimensional array chip and preparation method thereof |
| CN104882510A (en) * | 2015-06-04 | 2015-09-02 | 镇江镓芯光电科技有限公司 | Silicon carbide avalanche photodiode with novel small-dip-angle half mesa structure |
| CN107452831A (en) * | 2017-08-07 | 2017-12-08 | 中国电子科技集团公司第五十五研究所 | A kind of carborundum detection diode and preparation method |
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