CN109800535B - Design method of thin film transistor and computer readable medium - Google Patents
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Abstract
The invention discloses a design method of a thin film transistor and a computer readable medium, wherein the design method of the thin film transistor comprises the following steps: determining bending parameters and strain parameters of the thin film transistor according to bending design parameters required by the flexible display screen and design structure parameters of the thin film transistor in the flexible display screen; determining the state density variation of the thin film transistor before and after bending according to the strain parameter, bending parameter, design structure parameter and a pre-established state density multi-factor equation of the thin film transistor; the electrical characteristics of the thin film transistor are determined based on the state density variation. Before the flexible display screen is finished by the method, the electrical characteristics of the thin film transistor can be predicted according to the strain parameters, the bending parameters, the design structural parameters and the pre-established state density multi-factor equation of the thin film transistor, so that the detection cost is saved, and the structural design of the thin film transistor can be adjusted according to the prediction structure to prevent the thin film transistor from losing efficacy after the flexible display screen is bent.
Description
Technical Field
The present invention relates to the field of display technologies, and in particular, to a method for designing a thin film transistor and a computer readable medium.
Background
Along with the development of display technology, the flexible display screen has the advantages of light weight, curlability, foldability, portability, nonfriability and the like, so that the flexible display screen based on the flexible substrate material has wide application scenes.
In the related art, the electrical characteristics of the thin film transistor at the bending position after the flexible display screen is bent, for example, the on and off current, mobility and threshold voltage of the thin film transistor are changed, and abnormal display occurs in severe cases. At present, the electrical characteristics of the thin film transistor after bending are tested after the flexible display screen is finished, but the method cannot realize the prediction of the electrical characteristics of the thin film transistor before the experiment, and cannot predict whether the thin film transistor fails or not, so that the testing cost is increased.
Therefore, how to predict the electrical performance of the thin film transistor between the completion of the flexible display screen and realize the design of the thin film transistor is a technical problem to be solved by those skilled in the art.
Disclosure of Invention
The invention provides a design method of a thin film transistor and a computer readable medium, which are used for solving the problem that the thin film transistor cannot be designed in advance because the electrical property of the thin film transistor cannot be predicted between the completion of a flexible display screen in the related art.
In one aspect, an embodiment of the present invention provides a method for designing a thin film transistor, where the thin film transistor is applied to a flexible display screen, including:
determining bending parameters and strain parameters of a thin film transistor according to bending design parameters required by a flexible display screen and design structure parameters of the thin film transistor in the flexible display screen;
determining the state density variation of the thin film transistor before and after bending according to the strain parameter, bending parameter, design structure parameter and a pre-established state density multi-factor equation of the thin film transistor;
and determining the electrical characteristics of the thin film transistor according to the state density variation.
In a possible implementation manner, in the method for designing a thin film transistor provided by the embodiment of the present invention, according to a bending design parameter required by a flexible display screen and a design structure parameter of a thin film transistor in the flexible display screen, determining a bending parameter and a strain parameter of the thin film transistor specifically includes:
determining bending parameters of the thin film transistor according to bending design parameters required by the flexible display screen to be bent, design structural parameters of the thin film transistor and the position of the thin film transistor;
and determining the strain parameter of the thin film transistor according to the bending parameter and the design structure parameter.
In a possible implementation manner, in the method for designing a thin film transistor according to the embodiment of the present invention, determining the state density variation of the thin film transistor before and after bending according to the strain parameter, the bending parameter, the design structure parameter, and a pre-established state density multi-factor equation of the thin film transistor, before and after bending, the method further includes:
and establishing the state density multi-factor equation according to the bending parameter, the strain parameter, the design structure parameter and the fitting state density variation.
In a possible implementation manner, in the method for designing a thin film transistor provided by the embodiment of the present invention, the establishing the state density multi-factor equation specifically includes:
determining the bending parameter and the design structure parameter, and the strain parameter corresponding to the bending parameter and the design structure parameter;
determining the fitting state density variation quantity of the thin film transistor before and after bending the thin film transistor;
respectively determining coefficients corresponding to the bending parameter, the design structure parameter and the strain parameter according to the bending parameter, the design structure parameter, the strain parameter and the detected fitting state density variation;
and establishing a regression equation according to the corresponding coefficients of the bending parameter, the design structure parameter and the strain parameter, and determining the state density multi-factor equation.
In a possible implementation manner, in the method for designing a thin film transistor provided by the embodiment of the present invention, determining the fitting state density variation of the thin film transistor before and after bending the thin film transistor specifically includes:
detecting current and voltage parameters before and after bending of the thin film transistor;
and determining the fitting state density variation according to the current and voltage parameters and the preset relation between the current and voltage parameters and the fitting state density variation.
In a possible implementation manner, in the method for designing a thin film transistor provided by the embodiment of the present invention, the bending parameters include: and one or a combination of bending morphological parameters, bending times and bending radius of the thin film transistor.
In a possible implementation manner, in the method for designing a thin film transistor provided by the embodiment of the present invention, the method further includes:
judging whether the electrical characteristics of the thin film transistor accord with preset standard characteristics or not;
when the electrical characteristics of the thin film transistor accord with preset standard characteristics, the design structure parameters of the thin film transistor are determined to be suitable for the bending design parameters of the flexible display screen.
In a possible implementation manner, in the method for designing a thin film transistor provided by the embodiment of the present invention, the method further includes: and when the electrical characteristics of the thin film transistor do not meet the preset standard characteristics, adjusting the design structural parameters of the thin film transistor, and redefining the electrical characteristics of the thin film transistor until the electrical characteristics of the thin film transistor meet the preset standard characteristics.
In a possible implementation manner, in the method for designing a thin film transistor according to the embodiment of the present invention, the design structural parameters of the thin film transistor include: the thin film transistor has one or a combination of channel width-to-length ratio, mobility and equivalent capacitance.
In another aspect, an embodiment of the present invention provides a computer readable medium including program code for causing a computing device to execute the steps of the method for designing a thin film transistor according to any of the embodiments described above, when the program code is run on the computing device.
The invention has the following beneficial effects:
the embodiment of the invention provides a design method of a thin film transistor and a computer readable medium, wherein the design method of the thin film transistor comprises the following steps: determining bending parameters and strain parameters of a thin film transistor according to bending design parameters required by a flexible display screen and design structure parameters of the thin film transistor in the flexible display screen; determining the state density variation of the thin film transistor before and after bending according to the strain parameter, bending parameter, design structure parameter and a pre-established state density multi-factor equation of the thin film transistor; and determining the electrical characteristics of the thin film transistor according to the state density variation. Before the flexible display screen is finished by the method, the electrical characteristics of the thin film transistor can be predicted according to the strain parameters, the bending parameters, the design structural parameters and the pre-established state density multi-factor equation of the thin film transistor, so that the detection cost is saved, and the structural design of the thin film transistor can be adjusted according to the prediction structure to prevent the thin film transistor from losing efficacy after the flexible display screen is bent.
Drawings
Fig. 1 is a flow chart of a method for designing a thin film transistor according to an embodiment of the present invention;
FIG. 2 is a flow chart of a method for establishing a state density multi-factor equation according to an embodiment of the present invention.
Detailed Description
In the flexible display screen, the bent thin film transistor is subjected to the action of strain and stress, so that the crystal atomic structure and periodicity of an active layer of the thin film transistor are changed, the energy band shape, the effective mass of a current carrier, the scattering condition, the state density and the like are changed, and finally the device characteristic is changed. The changes of the electrical characteristics of the thin film transistor under the conditions of different bending modes (inner bending, outer bending, channel direction, vertical channel direction and the like), different bending times, different structural parameters (such as channel width to length ratio of the thin film transistor), different bending radiuses and the like are different, and serious display abnormality can be caused. In the related art, the electrical characteristics of the thin film transistor before and after bending are measured after the flexible display screen is manufactured, but the method can not predict the electrical characteristics of the thin film transistor before manufacturing so as to adjust the design of the thin film transistor, and the design cost is greatly increased.
In view of the above problems in designing a thin film transistor in the related art, embodiments of the present invention provide a method for designing a thin film transistor and a computer-readable medium. In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The shapes and sizes of the various components in the drawings do not reflect true proportions and are intended to illustrate the invention only.
Specifically, as shown in fig. 1, the embodiment of the invention provides a method for designing a middle thin film transistor, which includes:
s101, determining bending parameters and strain parameters of a thin film transistor according to bending design parameters required by a flexible display screen and design structure parameters of the thin film transistor in the flexible display screen;
specifically, the bending design parameters of the flexible display screen may include bending radius, bending form (inner bending, outer bending, bending along the channel direction, bending perpendicular to the channel direction, etc.), bending times, etc. of the flexible display screen; the design structural parameters of the thin film transistor include: channel width-to-length ratio, mobility, equivalent capacitance, etc. of the thin film transistor; the bending parameters of the thin film transistor and the strain parameters of the thin film transistor can be calculated according to the position of the thin film transistor in the flexible display screen, the bending design parameters of the flexible display screen and the design structure parameters of the thin film transistor. The bending parameters of the thin film transistor may include bending radius, bending form (inner bending, outer bending, bending along the channel direction, bending along the vertical channel direction, etc.), bending times, etc.; the strain parameter to which the thin film transistor is subjected may include variations in parameters such as stress and strain of the thin film transistor.
S102, determining the state density variation of the thin film transistor before and after bending according to the strain parameter, bending parameter, design structure parameter and a pre-established state density multi-factor equation of the thin film transistor;
wherein the state density multi-factor equation is a multi-factor equation established based on statistical data, and can be Y=a+b 1 X1+b 2 X2+b 3 X3+b 4 X4+b 5 X5 and Y represent state density variation, X1 represents strain parameter, and X2, X3, X4 and X5 can respectively represent bending form, bending frequency, bending radius and design structure parameter of the thin film transistor, a and b 1 、b 2 、b 3 、b 4 B 5 Are all constant. And determining the state density variation Y of the thin film transistor before and after bending according to the X1, X2, X3, X4 and X5 determined in the previous steps and a state density multi-factor equation.
S103, determining the electrical characteristics of the thin film transistor according to the state density variation.
And determining the electrical characteristics of the bent thin film transistor according to the state density variation and the corresponding relation between the state density variation and the electrical characteristics of the thin film transistor determined in the steps.
The embodiment of the invention provides a design method of a thin film transistor, which comprises the following steps: determining bending parameters and strain parameters of the thin film transistor according to bending design parameters required by the flexible display screen and design structure parameters of the thin film transistor in the flexible display screen; determining the state density variation of the thin film transistor before and after bending according to the strain parameter, bending parameter, design structure parameter and a pre-established state density multi-factor equation of the thin film transistor; the electrical characteristics of the thin film transistor are determined based on the state density variation. Before the flexible display screen is finished by the method, the electrical characteristics of the thin film transistor can be predicted according to the strain parameters, the bending parameters, the design structural parameters and the pre-established state density multi-factor equation of the thin film transistor, so that the detection cost is saved, and the structural design of the thin film transistor can be adjusted according to the prediction structure to prevent the thin film transistor from losing efficacy after the flexible display screen is bent.
Optionally, in the method for designing a thin film transistor provided in the embodiment of the present invention, step S101 specifically includes:
determining bending parameters of the thin film transistor according to bending design parameters required by the flexible display screen to be bent, design structure parameters of the thin film transistor and the position of the thin film transistor;
and determining the strain parameter of the thin film transistor according to the bending parameter and the design structure parameter.
Specifically, in the method for designing the thin film transistor provided by the embodiment of the invention, the thin film transistors at different positions in the flexible display screen are not affected by the bending of the flexible display screen, and the thin film transistors at the positions with large deformation of the flexible display screen are also affected by the bending, so that the bending parameters of the thin film transistor need to be determined by integrating the bending design parameters of the flexible display screen, the positions where the thin film transistors are located and the structure of the thin film transistor.
Optionally, in the method for designing a thin film transistor provided in the embodiment of the present invention, before step S102, the method further includes:
and establishing a state density multi-factor equation according to the bending parameter, the strain parameter, the design structure parameter and the fitting state density variation.
Specifically, in the method for designing a thin film transistor according to the embodiment of the present invention, as shown in fig. 2, establishing a state density multi-factor equation specifically includes:
s201, determining bending parameters and design structure parameters, and strain parameters corresponding to the bending parameters and the design structure parameters;
specifically, the simulation can be performed by using finite element analysis software, and the design structure parameters and the bending parameters of the thin film transistor are input, so that the strain parameters corresponding to the design structure parameters and the bending parameters can be output. For example, the bending parameters include bending shape X2, bending number X3, and bending radius X4; the design structure parameter is X5, and the strain parameter determined according to the parameters is X1.
S202, determining the fitting state density variation Y' of the thin film transistor before and after bending the thin film transistor;
the electrical characteristic parameters of the thin film transistor before and after bending are detected and can be current and voltage characteristics, the detected electrical characteristic parameters are utilized to perform fitting in TCAD software by changing the state density parameters of the active layer of the thin film transistor, and the fitting state density variation of the thin film transistor under each bending condition is determined. The TCAD (Technology Computer Aided Design) software is semiconductor process simulation and device simulation tool software.
S203, respectively determining coefficients corresponding to the bending parameters, the design structural parameters and the strain parameters according to the bending parameters (X2, X3 and X4), the design structural parameters X5, the strain parameters X1 and the fitting state density variation Y' obtained by detection;
specifically, the following functional relationship Y' =a+b can be established 1 X1+b 2 X2+b 3 X3+b 4 X4+b 5 X5 and Y' represent the variation of the density of the fitting state; x1 represents a strain parameter; x2, X3 and X4 can respectively represent the bending form, the bending times and the bending radius of the thin film transistor, namely bending parameters; x5 represents a design structural parameter; the a and b can be calculated by multiple groups of data 1 、b 2 、b 3 、b 4 B 5 Value of the constant.
S204, establishing a regression equation according to coefficients respectively corresponding to the bending parameters, the design structure parameters and the strain parameters, and determining a state density multi-factor equation.
Through the steps, a and b are calculated 1 、b 2 、b 3 、b 4 B 5 The value of the isocenter, thereby establishing a regression equation, thereby determining a state density multifactor equation y=a+b 1 X1+b 2 X2+b 3 X3+b 4 X4+b 5 X5。
Optionally, in the method for designing a thin film transistor provided in the embodiment of the present invention, step S202 specifically includes:
detecting current and voltage parameters before and after bending of the thin film transistor, namely detecting electrical characteristics of the thin film transistor before and after bending;
and determining the fitting state density variation according to the current and voltage parameters and the relation between the preset current and voltage parameters and the fitting state density variation.
The relation between the current and voltage parameters and the fitting state density variation is determined according to a large amount of detection data before and after bending the thin film transistor.
Optionally, in the method for designing a thin film transistor provided by the embodiment of the present invention, the bending parameters include: one or a combination of bending morphological parameters, bending times and bending radius of the thin film transistor.
It should be noted that the bending parameters may also include parameters other than bending morphology parameters, bending times and bending radii, which are not particularly limited herein.
In addition to the above, in the method for designing a thin film transistor provided by the embodiment of the present invention, the method further includes:
judging whether the electrical characteristics of the thin film transistor accord with preset standard characteristics or not;
when the electrical characteristics of the thin film transistor accord with preset standard characteristics, determining the design structural parameters of the thin film transistor to be suitable for bending design parameters of the flexible display screen;
when the electrical characteristics of the thin film transistor do not meet the preset standard characteristics, the design structural parameters of the thin film transistor are adjusted, and the electrical characteristics of the thin film transistor are redetermined until the electrical characteristics of the thin film transistor meet the preset standard characteristics.
Specifically, in the method for designing a thin film transistor provided by the embodiment of the invention, whether the electrical parameters of the thin film transistor after bending can reach the preset standard is judged, and if so, the thin film transistor with the current design structural parameters is determined to be suitable for the bending design of the flexible display screen; if the design structural parameters are not satisfied, determining that the thin film transistor with the current design structural parameters cannot be suitable for the bending design of the flexible display screen, and correcting the design structural parameters of the thin film transistor until the design structural parameters can be suitable for the bending design of the flexible display screen.
Optionally, in the method for designing a thin film transistor provided by the embodiment of the present invention, design structural parameters of the thin film transistor include: one or a combination of channel width to length ratio, mobility and equivalent capacitance of the thin film transistor.
Of course, the design structural parameters may include other parameters besides the channel width-to-length ratio, mobility and equivalent capacitance of the thin film transistor, which are not particularly limited herein.
Based on the same inventive concept, the embodiments of the present invention also provide a computer readable medium including program code for causing a computing device to execute the steps of the method for designing a thin film transistor provided in any of the above embodiments when the program code is run on the computing device.
Since the principle of the solution of the problem of the computer readable medium is similar to that of the design method of the thin film transistor, the implementation of the computer readable medium can be implemented by referring to the specific embodiment of the design method of the thin film transistor, and the repetition is omitted.
The program product may employ any combination of one or more readable media. The readable medium may be a readable signal medium or a readable storage medium. The readable storage medium can be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or a combination of any of the foregoing. More specific examples (a non-exhaustive list) of the readable storage medium would include the following: an electrical connection having one or more wires, a portable disk, a hard disk, random Access Memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.
A display product according to an embodiment of the present invention may employ a portable compact disc read-only memory (CD-ROM) and include program code and may run on a server device. However, the program product of the present invention is not limited thereto, and in this document, a readable storage medium may be any tangible medium that can contain, or store a program for use by or in connection with an information transmission, apparatus, or device.
The readable signal medium may include a data signal propagated in baseband or as part of a carrier wave with readable program code embodied therein. Such a propagated data signal may take any of a variety of forms, including, but not limited to, electro-magnetic, optical, or any suitable combination of the foregoing. The readable signal medium may also be any readable medium that is not a readable storage medium and that can communicate, propagate, or transport a program for use by or in connection with a periodic network action system, apparatus, or device.
Program code embodied on a readable medium may be transmitted using any appropriate medium, including but not limited to wireless, wireline, optical fiber cable, RF, etc., or any suitable combination of the foregoing.
Program code for carrying out operations of the present invention may be written in any combination of one or more programming languages, including an object oriented programming language such as Java, C++ or the like and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The program code may execute entirely on the user's computing device, partly on the user's device, as a stand-alone software package, partly on the user's computing device, partly on a remote computing device, or entirely on the remote computing device or server. In the case of remote computing devices, the remote computing device may be connected to the user computing device through any kind of network, including a Local Area Network (LAN) or a Wide Area Network (WAN), or may be connected to an external computing device.
From the foregoing description of the embodiments, those skilled in the art will readily appreciate that embodiments of the present invention may be implemented in hardware, or by means of software plus a necessary general purpose hardware platform. Based on such understanding, the technical solution of the embodiments of the present invention may be embodied in the form of a software product, which may be stored in a non-volatile storage medium (may be a CD-ROM, a U-disk, a mobile hard disk, etc.), and includes several instructions for causing a computer device (may be a personal computer, a server, or a network device, etc.) to perform the method described in the embodiments of the present invention.
Those skilled in the art will appreciate that the drawing is merely a schematic representation of one preferred embodiment and that the modules or processes in the drawing are not necessarily required to practice the invention.
Those skilled in the art will appreciate that modules in an apparatus of an embodiment may be distributed in an apparatus of an embodiment as described in the embodiments, and that corresponding changes may be made in one or more apparatuses different from the present embodiment. The modules of the above embodiments may be combined into one module, or may be further split into a plurality of sub-modules.
The foregoing embodiment numbers of the present invention are merely for the purpose of description, and do not represent the advantages or disadvantages of the embodiments.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (9)
1. A method for designing a thin film transistor, the thin film transistor being applied to a flexible display screen, comprising:
determining bending parameters and strain parameters of a thin film transistor according to bending design parameters required by a flexible display screen and design structure parameters of the thin film transistor in the flexible display screen;
determining the state density variation of the thin film transistor before and after bending according to the strain parameter, bending parameter, design structure parameter and a pre-established state density multi-factor equation of the thin film transistor; the method for establishing the state density multi-factor equation comprises the following steps: determining the bending parameter and the design structure parameter, and the strain parameter corresponding to the bending parameter and the design structure parameter; determining the fitting state density variation of the thin film transistor before and after bending; respectively determining coefficients corresponding to the bending parameter, the design structure parameter and the strain parameter according to the bending parameter, the design structure parameter, the strain parameter and the detected fitting state density variation; establishing a regression equation according to the corresponding coefficients of the bending parameter, the design structure parameter and the strain parameter, and determining the state density multi-factor equation;
and determining the electrical characteristics of the thin film transistor according to the state density variation.
2. The method for designing a thin film transistor according to claim 1, wherein determining the bending parameter and the strain parameter of the thin film transistor according to the bending design parameter required by the flexible display screen and the design structure parameter of the thin film transistor in the flexible display screen specifically comprises:
determining bending parameters of the thin film transistor according to bending design parameters required by a flexible display screen to be bent, design structure parameters of the thin film transistor and the position of the thin film transistor;
and determining the strain parameter of the thin film transistor according to the bending parameter and the design structure parameter.
3. The method of designing a thin film transistor according to claim 1, wherein determining the state density variation of the thin film transistor before and after bending according to the strain parameter, the bending parameter, the design structure parameter, and a pre-established state density multi-factor equation, further comprises:
and establishing the state density multi-factor equation according to the bending parameter, the strain parameter, the design structure parameter and the fitting state density variation.
4. The method for designing a thin film transistor according to claim 1, wherein determining the amount of change in the density of fit state of the thin film transistor before and after bending the thin film transistor comprises:
detecting current and voltage parameters before and after bending of the thin film transistor;
and determining the fitting state density variation according to the current and voltage parameters and the preset relation between the current and voltage parameters and the fitting state density variation.
5. The method of designing a thin film transistor according to any one of claims 1 to 4, wherein the bending parameters include: and one or a combination of bending morphological parameters, bending times and bending radius of the thin film transistor.
6. The method for designing a thin film transistor according to any one of claims 1 to 4, further comprising:
judging whether the electrical characteristics of the thin film transistor accord with preset standard characteristics or not;
when the electrical characteristics of the thin film transistor accord with preset standard characteristics, the design structure parameters of the thin film transistor are determined to be suitable for the bending design parameters of the flexible display screen.
7. The method for designing a thin film transistor according to claim 6, further comprising: and when the electrical characteristics of the thin film transistor do not meet the preset standard characteristics, adjusting the design structural parameters of the thin film transistor, and redefining the electrical characteristics of the thin film transistor until the electrical characteristics of the thin film transistor meet the preset standard characteristics.
8. The method of designing a thin film transistor according to claim 7, wherein the design structural parameters of the thin film transistor include: the thin film transistor has one or a combination of channel width-to-length ratio, mobility and equivalent capacitance.
9. A computer readable medium comprising program code for causing a computing device to perform the steps of the method of designing a thin film transistor according to any one of claims 1-8 when said program code is run on said computing device.
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