CN109786199A - A kind of more cathode long-life type ion sources - Google Patents
A kind of more cathode long-life type ion sources Download PDFInfo
- Publication number
- CN109786199A CN109786199A CN201910189383.4A CN201910189383A CN109786199A CN 109786199 A CN109786199 A CN 109786199A CN 201910189383 A CN201910189383 A CN 201910189383A CN 109786199 A CN109786199 A CN 109786199A
- Authority
- CN
- China
- Prior art keywords
- cathode
- type ion
- ion sources
- long
- life type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 abstract 4
- 238000005468 ion implantation Methods 0.000 description 6
- 229940090044 injection Drugs 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
The present invention provides a kind of more cathode long-life type ion sources, in such a way that indirect type heats cathode.Combined by the hot cathode of axially symmetric filament and cathode and constitute twin cathode structure, multiple groups twin cathode structure can free switching emission of ions end and reflection end, improve the service life of ion source, improve ion implanting machine equipment stability and high efficiency.
Description
Technical field
The present invention relates to equipment for making semiconductor device, the in particular to ion source of ion implantation apparatus.
Background technique
Ion implantation apparatus is the key equipment in semiconductor devices manufacturing process, need to inject ion and obtain through ionization, gather
Coke obtains high kinetic energy through electric field acceleration at ion beam, injects in semiconductor crystal wafer, to realize doping.
Typical ion implantation apparatus includes ion source, Ion Extraction device, quality analysis apparatus, beam transmitting device and crystalline substance
Piece treating apparatus.Ion source is the device for injection ion needed for generating, and the service life of ion source determines ion implantation apparatus operating
Stabilization and efficiency, be the key device of ion implantation apparatus.
What existing ion source of ion implanter mostly used has Bai Nasi ion source and indirectly heated cathode (IHC) ion source etc.
Two ways.
Bai Nasi ion source is that filament is directly powered, and emits thermoelectron to ion source arc chamber after filament heating.Filament is because adding
After thermal electron, filament can be consumed until disappearing, therefore the service life of Bai Nasi ion source depends on the service life of filament.
Indirect type adds hot-cathode ion source, by the way that the filament power supply close to cathode internal, filament issues thermoelectron to yin
Pole is heated, and cathode is made to issue thermoelectron into the arc chamber of ion source.Protection due to filament by cathode, burn-out life can
Extend, therefore indirect type adds hot-cathode ion source that can effectively prolong the service life.
In indirect type plus hot-cathode ion source embodiment, cathode is arranged at one end of chamber, with cathode axial direction phase
Pair chamber one end be equipped with repellel.Cathode and repellel add same position bias voltage to generate and reflective electron, thus will
Electron reflection is in as the arc chamber in magnetic field.The problem of such indirectly heated cathode ion source is the limited longevity of single cathode
Life.
Summary of the invention
The present invention is in view of the shortcomings of the prior art, provide a kind of more cathode long-lives in such a way that indirect type heats cathode
Type ion source.
The present invention provides the repellel in a kind of existing embodiment of the hot cathode combination replacement with filament and cathode, is formed double
Cathode construction.Twin cathode structure can realize the free switching of the function of emission of cathode electronics and repellel reflective electron, increase heat
Electron emission time and emission measure increase ion source life；The quantity of two groups or more axially symmetric cathodes, multiple increase from
The component service life.
More cathode long-life type ion sources provided by the invention include:
Arc chamber, electron motion and the cavity for generating the required ion of injection；
Filament imposes electric current and generates thermionic heater strip；
Cathode, the single-ended closed sleeve of concave structure；
Magnetic field covers the magnetic field of ion source arc chamber range.
The filament and the cathode site are relatively fixed, and filament is embedded in cathode slots, contactless insulation,
I.e. hot cathode combines；The hot cathode combination is combined with axially symmetric hot cathode, constitutes twin cathode；The cathode and the arc
Room position is relatively fixed, and cathode closed end is placed in arc chamber cavity, and open end is placed in outside arc chamber, contactless insulation；It is described
Ion source magnetic field magnetic line direction is consistent with the twin cathode axis direction.
Detailed description of the invention
Fig. 1 is the more cathode long-life type ion source schematic diagrams of present example；
Fig. 2 is the more cathode long-life type ion source structure figures of present example；
Specific embodiment
Such as 2 case study on implementation of attached drawing, filament 101~104 is relatively fixed with the difference of cathode 201~204 position respectively, and filament is equal
It is non-contacting to be embedded in cathode slots, form hot cathode combination；The combination of the hot cathode of filament 101 and cathode 201 and filament 103
And the hot cathode combination of cathode 203 is axially and symmetrically, i.e. A group twin cathode；The combination of the hot cathode of filament 102 and cathode 202 and filament
104 and cathode 204 hot cathode combination axially and symmetrically, i.e. B group twin cathode.
3 cavity of arc chamber includes end tab 301, side wall 302 and bottom plate 303；End tab 301, bottom plate 303 and the side wall
302 top and bottom pass through insertion or pin guiding connection；The component group of the symmetrical aperture in one side or more than one piece all or part aperture
At.Symmetric polygonal or circle may be selected in arc chamber 3.
Cathode 201~204 is installed in arc chamber by 302 through-hole of side wall, and cathode closed end is placed in arc chamber cavity, is opened
End is put to be placed in outside arc chamber；Filament 101~104, cathode 201~204 and end tab 301, side wall 302 and bottom plate 303 are non-contact
Formula insulation.
Selection applies same bias voltage to two cathodes in A group or B group twin cathode, and the filament of a hot cathode is applied
With electric current, the cathode heated in a combination thereof generates thermoelectron；The filament of another hot cathode is cut off the power, and cathode, which does repellel, to be made
With, according to the service life state of practical heating cathode, two groups of hot cathode filament power switches, the i.e. work of switching hot cathode in switch groups
State.Magnetic field magnetic is done according to the working condition of cathode in twin cathode to be switched, and magnetic line of force direction is consistent with twin cathode axial direction, and
It is done and is switched according to the working condition of cathode.At the end of to this twin cathode working life state, another group of twin cathode work is opened, is reached
Increase ion source life to multiple, improves the stabilization and efficiency of ion implantation apparatus operating.
Claims (8)
1. a kind of more cathode long-life type ion sources, are made of filament, cathode, arc chamber and magnetic field.
2. a kind of more cathode long-life type ion sources according to claim 1, non-contact between filament, cathode and arc chamber
Formula insulation.
3. a kind of more cathode long-life type ion sources according to claim 1, by the heat of axially symmetric filament and cathode
The twin cathode structure that cathode combination is formed.
4. a kind of more cathode long-life type ion sources according to claim 1, by two groups or more of twin cathode structure group
At.
5. a kind of more cathode long-life type ion sources according to claim 1, symmetric polygonal or circle is may be selected in arc chamber
Structure is made of end tab, side wall and bottom plate.
6. a kind of more cathode long-life type ion sources according to claim 5, end tab are that the symmetrical of fairlead is opened at center
Polygon or round structure.
7. a kind of more cathode long-life type ion sources according to claim 5, side wall be by the symmetrical aperture in a side or
The component of more than one piece all or part aperture forms.
8. a kind of more cathode long-life type ion sources according to claim 5, bottom plate is be provided with injection well symmetrical polygon
Shape or circular configuration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910189383.4A CN109786199A (en) | 2019-03-13 | 2019-03-13 | A kind of more cathode long-life type ion sources |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910189383.4A CN109786199A (en) | 2019-03-13 | 2019-03-13 | A kind of more cathode long-life type ion sources |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109786199A true CN109786199A (en) | 2019-05-21 |
Family
ID=66489160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910189383.4A Pending CN109786199A (en) | 2019-03-13 | 2019-03-13 | A kind of more cathode long-life type ion sources |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109786199A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111933507A (en) * | 2020-08-18 | 2020-11-13 | 泉芯集成电路制造(济南)有限公司 | Ion source structure with double filaments and control method thereof |
| CN113097036A (en) * | 2021-04-02 | 2021-07-09 | 西京学院 | Neutron tube structure capable of leading penning ion source out in two directions |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005251468A (en) * | 2004-03-02 | 2005-09-15 | Seiko Epson Corp | Ion generator and ion implantation device |
| CN102796987A (en) * | 2012-08-21 | 2012-11-28 | 沈阳华迅真空科技有限公司 | Gas ion source device |
| US20140167614A1 (en) * | 2012-12-19 | 2014-06-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Arc chamber with multiple cathodes for an ion source |
| CN108054071A (en) * | 2017-09-28 | 2018-05-18 | 日新离子机器株式会社 | Ion source and ion implantation apparatus |
| CN209658131U (en) * | 2019-03-13 | 2019-11-19 | 无锡诚承电子科技有限公司 | A kind of more cathode long-life type ion sources |
-
2019
- 2019-03-13 CN CN201910189383.4A patent/CN109786199A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005251468A (en) * | 2004-03-02 | 2005-09-15 | Seiko Epson Corp | Ion generator and ion implantation device |
| CN102796987A (en) * | 2012-08-21 | 2012-11-28 | 沈阳华迅真空科技有限公司 | Gas ion source device |
| US20140167614A1 (en) * | 2012-12-19 | 2014-06-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Arc chamber with multiple cathodes for an ion source |
| CN108054071A (en) * | 2017-09-28 | 2018-05-18 | 日新离子机器株式会社 | Ion source and ion implantation apparatus |
| CN209658131U (en) * | 2019-03-13 | 2019-11-19 | 无锡诚承电子科技有限公司 | A kind of more cathode long-life type ion sources |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111933507A (en) * | 2020-08-18 | 2020-11-13 | 泉芯集成电路制造(济南)有限公司 | Ion source structure with double filaments and control method thereof |
| CN113097036A (en) * | 2021-04-02 | 2021-07-09 | 西京学院 | Neutron tube structure capable of leading penning ion source out in two directions |
| CN113097036B (en) * | 2021-04-02 | 2023-10-31 | 西京学院 | Neutron tube structure for bidirectionally leading out penning ion source |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101147227B (en) | Cathode and counter-cathode arrangement in an ion source | |
| US8330127B2 (en) | Flexible ion source | |
| CN109786199A (en) | A kind of more cathode long-life type ion sources | |
| KR102157921B1 (en) | Dual tube support for electron emitter | |
| CN209658131U (en) | A kind of more cathode long-life type ion sources | |
| Zelenski et al. | High-intensity polarized and un-polarized sources and injector developments at BNL Linac | |
| KR101899206B1 (en) | Ion source and method of generating hot electrons thereof | |
| CN100533649C (en) | Cathode and counter cathode arrangement in an ion source | |
| CN107633992B (en) | Ion source with double thermionic electron source and its thermionic electron generating method | |
| JP4401977B2 (en) | Method for producing filament used for ion source and ion source | |
| KR20080102830A (en) | Ion generator | |
| WO2013013086A1 (en) | Current limiter for high voltage power supply used with ion implantation system | |
| JP2014526121A5 (en) | Ion implantation system with surge protection system | |
| EP0911861A1 (en) | Filament for ion implanter plasma shower | |
| Perini et al. | Design of high-performance guns for the HL-LHC HEL | |
| CN107910236B (en) | Electron emission device based on thermionic emission cathode | |
| US4288716A (en) | Ion source having improved cathode | |
| KR100559515B1 (en) | Ion source of an ion implanting apparatus | |
| CN208753260U (en) | Ion source and ion implantation apparatus | |
| JPS62163242A (en) | Plasma source | |
| KR100490908B1 (en) | Vacuum Diffusion Arc Gap Switch | |
| KR20050050000A (en) | A source head arc chamber of ion implantation machine | |
| KR20080084002A (en) | Source head arc chamber of ion injection apparatus | |
| JP4534055B2 (en) | Ion source | |
| KR101573268B1 (en) | hybrid device for generating ion |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |