CN109783899A - A kind of silicon substrate antenna dynamic model based on Manufacturing resource system - Google Patents
A kind of silicon substrate antenna dynamic model based on Manufacturing resource system Download PDFInfo
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- CN109783899A CN109783899A CN201811615421.XA CN201811615421A CN109783899A CN 109783899 A CN109783899 A CN 109783899A CN 201811615421 A CN201811615421 A CN 201811615421A CN 109783899 A CN109783899 A CN 109783899A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses a kind of silicon substrate antenna dynamic modeling systems, it include: the inner conductor (7) of radiating layer (1), coupling layer (2), micro-strip feed layer (3), array antenna stratum (4), feed connector, radiating layer (1) is placed in above coupling layer (2), micro-strip feed layer (3) is placed in below coupling layer (2), and the inner conductor (7) of feed connector realizes radio frequency interconnection by micro-strip feed layer (3) and radiating layer (1), coupling layer (2).Radiating layer (1), coupling layer (2), micro-strip feed layer (3) are the single layer radio-frequency structure made of standard silicon process.Inventive antenna baseplate material is optional, and each layer parameter is adjustable, and feeding classification is optional, and micro-system Manufacturing resource degree is high.
Description
Technical field
The present invention relates to microwave antenna art field, in particular to a kind of silicon substrate antenna dynamic based on Manufacturing resource system
Model.
Background technique
The development of antenna technology is established on the basis of design theory and material devices technique synchronized development.It is micro- in order to meet
System multilayer grade, multi-specialized collaborative design requirement, it is necessary to the library silicon substrate antenna IP technology is carried out based on silicon substrate integrated technique platform,
It is integrated around the micromation of antenna, lightness, incorporated high density, it is necessary first to carry out silicon substrate antenna theory research, break through existing
There is standard, provide the Novel design scheme for meeting design requirement, next is intimately associated the hair of silica-base material science, manufacture craft
Exhibition so that the High Density Integration of antenna is studied to obtain the beneficial support of new material and Micromachining Technology, it is ensured that scheme and
The advance of technology.
The library silicon substrate antenna IP will finally realize the total digitalization library IP design of Simulation platform by establishing emulation platform, emulate
System index decomposition, consideration structure, heat dissipation etc. are required, realize the antenna element for meeting system technique and tactics index request by the stage
Product.Master-plan standard process based on Manufacturing resource system strengthens the modeling and simulating specification in the design of Manufacturing resource system
With require, the integrated architecture of antenna array in primary study Manufacturing resource design process, researching antenna unit, array antenna emulation
Electromagnetism collaborative design problem in design forms related design rule.By typical process PDK model, functional circuit model, it is
The design and exploitation of system integrated model, study typical design cycle method, realize that the micro-system of standardization precisely models.Pass through
The model design and verification of exemplary functions realizes modular system design, constructs the library collaborative design and development IP based on digital prototype, grind
Study carefully silicon substrate antenna synthesis modeling and simulating design method under the conditions of broadband high-power, lays heavily fortified point for the following micro-system universal design
Real basis.
Problem of the existing technology is: 1. existing antenna element models are to customize model, can not be made in different
It is neatly adjusted and is optimized under scene；2. common antenna element section is high, Model Independent, it is typically based on metal, micro-
Wave plate material processing, it is difficult to meet the high integration requirement of micro-system.
Summary of the invention
The purpose of the present invention is what is be achieved through the following technical solutions.
To handle the above problem, a kind of silicon substrate antenna dynamic model based on Manufacturing resource system, the antenna are researched and developed
Model, which is specifically included that, radiates array element form by the multilayer that radiating layer, coupling layer and feed layer form, for presenting active layer
The microstrip-fed line of electricity, vertical transition perforation, feed connector, for improving the metal insulated column of scan performance.
A kind of silicon substrate antenna dynamic modeling system, comprising: radiating layer (1), coupling layer (2), micro-strip feed layer (3), array
Antenna stratum (4), feed connector inner conductor (7), radiating layer (1) is placed in above coupling layer (2), and micro-strip feed layer (3) is set
Below coupling layer (2), the inner conductor (7) of feed connector is real by micro-strip feed layer (3) and radiating layer (1), coupling layer (2)
Existing radio frequency interconnection.
Specifically, radiating layer (1), coupling layer (2), micro-strip feed layer (3) are the single layer made of standard silicon process
Radio-frequency structure.
Specifically, radiating layer (1) includes radiation metal patch (11), multiple first radiation metal insulated columns (12), radiation
Layer Si substrate (13), wherein multiple first radiation metal insulated columns (12) are evenly distributed in inside radiating layer Si substrate (13) and lean on
The surrounding of nearly outer ledge, radiation metal patch (11) are located at radiating layer Si substrate (13) interior central area.
Specifically, coupling layer (2) include the first coupling layer Si substrate (22), multiple second radiation metal insulated columns (21),
Multiple first feed metal insulated columns (23), coupling gap (24), wherein
Multiple second radiation metal insulated columns (21) are evenly distributed in the internal outer ledge of the first coupling layer Si substrate (22)
The upper end of surrounding, the upper end of multiple second radiation metal insulated columns (21) and the first coupling layer Si substrate (22) is in same level
On, the lower end of multiple second radiation metal insulated columns (21) is located at the inside of the first coupling layer Si substrate (22), multiple first feedbacks
Electric metal insulated column (23), in first coupling layer Si substrate (22) interior central area, is coupled gap (24) and is located at rectangular arranged
Multiple first feed metal insulated column (23) medial center regions of rectangular arranged, for forming strong mutual coupling with radiating layer (1)；
When radiating layer (1) is placed in above coupling layer (2), the multiple first radiation metal insulated column (12) with it is the multiple
Second radiation metal insulated column (21) docks one by one, constitutes multiple radiation metal insulated columns (5).
Specifically, micro-strip feed layer (3) includes microstrip-fed line (31), the second coupling layer Si substrate (32), metal ground layer
(33), multiple second feed metal insulated columns (34), feed connector outer conductor (35), wherein
Multiple second feed metal insulated columns (34) are with rectangular arranged in second coupling layer Si substrate (32) inside center area
Domain；
When micro-strip feed layer (3) is placed in below coupling layer (2), the multiple first feed metal insulated column (23) with it is described
Multiple second feed metal insulated columns (34) are docked one by one, constitute multiple feed metal insulated columns (6).
Specifically, microstrip-fed line (31) connect with the inner conductor (7) of feed connector, and metal ground layer (33) and feed connect
The outer conductor (35) for connecing device is connect with array antenna stratum (4).
Specifically, radiating layer (1), coupling layer (2), micro-strip feed layer (3), array antenna stratum (4) are that shape is identical
Quadrangle.
Specifically, multiple first radiation metal insulated columns (12), multiple second radiation metal insulated columns (21) be radially
It is double-layer structure, after the first radiation metal insulated column (12), multiple second radiation metal insulated columns (21) are docked one by one,
Multiple radiation metal insulated columns (5) form double-layer structure radially.
Specifically, radiation metal patch (11) dimension adjustable, it is the multiple first radiation metal insulated column (12), multiple
The cavity size that second radiation metal insulated column (21) is formed is adjustable, the multiple first feed metal insulated column (23), more
The cavity size that a second feed metal insulated column (34) is formed is adjustable, radiating layer Si substrate (13), the first coupling layer Si base
Plate (22), second coupling layer Si substrate (32) material are replaceable, couple gap (24) dimension adjustable, microstrip-fed line (31) ruler
Very little adjustable, the feeding classification of the outer conductor (35) of feed connector may be selected.
Specifically, radiating layer Si substrate (13), the first coupling layer Si substrate (22), the second coupling layer Si substrate (32) can make
Baseplate material includes: High Resistivity Si (Si), silica (SiO2), low-temperature co-fired ceramics (LTCC), high-temperature co-fired ceramics
(HTCC), photon band gap (PGB) material, high temperature superconducting materia (HTS), microwave board, organo-metallic material.
It specifically, further include through silicon via, through silicon via is located at the port of micro-strip feed layer (3), can be used for substituting feed connection
The inner conductor (7) of device and the outer conductor (35) of feed connector；
It further include active circuit, active circuit is located at below metal ground layer (33)；
Microstrip-fed line (31) is connect with the outer conductor (35) of electric connector by Manufacturing resource interface；
Microstrip-fed line (31), through silicon via, feed connector inner conductor (7) connect respectively with active circuit.
The present invention has the advantages that
1, antenna substrate material is optional: baseplate material used in silicon substrate antenna dynamic model of the invention includes but unlimited
In High Resistivity Si (Si), silica (SiO2), low-temperature co-fired ceramics (LTCC), high-temperature co-fired ceramics (HTCC), photon band gap
(PGB) material, high temperature superconducting materia (HTS), microwave board, organo-metallic material etc., can be adjusted according to usage scenario, realize
With the match materials of active circuit.
2, each layer parameter is adjustable: silicon substrate antenna of the invention is using with the low close coupling wideband patch for cuing open feature of plane
Radiating element realizes that broadband is low and cuts open array antenna, according to the demand characteristics of usage scenario, aerial array spacing (single antenna ruler
It is very little), patch size, coupled chamber size it is adjustable, can the degree of coupling effectively between control unit, to optimize antenna spoke
Penetrate performance；Radiation is placed on certain altitude above coupling layer, plays the role of wide angle matching layer in an array, can effectively keep away
Exempt to use medium matching layer and bring scans the blind spot problem mobile toward array normal direction.Further, since cell spacing
It adjusts, the current loop greater than a wavelength may be will form between adjacent feed points, so that generating resonance influences antenna array
Scan performance.Therefore, wall is formed by radiation metal insulated column between adjacent array element in the design of array, so that adjacent cells
Between it is mutually isolated, to be effectively improved array scanning performance.
3, feeding classification is adjustable: silicon substrate antenna of the invention is using Manufacturing resource interface (microstrip-fed line (31) and feed
The interface of connector (35) interconnection), according to the feature of micro-strip feed layer (3) port, micro-strip feed layer, feed connector are carried out
Adjustment, can by microstrip-fed line (31), TSV (Through Silicon Vias through silicon via, it is alternative in antenna feed port
Connector, reduce feeder loss, reduce section height, improve integrated level), feed connector (7) docked with active circuit, adaptation
Property is strong.
4, micro-system Manufacturing resource degree is high: silicon substrate antenna dynamic model material of the invention is optional, size adjustable, feed side
Formula is adjustable, and the connection types such as interconnection, vertical interconnection, connector blindmate in plate, integrated level height, flexibility ratio can be realized with micro-system
Height improves the freedom degree of micro-system Manufacturing resource.
Detailed description of the invention
By reading the detailed description of following detailed description, various other advantages and benefits are common for this field
Technical staff will become clear.Attached drawing is only used for showing the purpose of specific embodiment, and is not considered as to the present invention
Limitation.And throughout the drawings, the same reference numbers will be used to refer to the same parts.In the accompanying drawings:
Attached drawing 1 shows the silicon substrate antenna dynamic model signal based on Manufacturing resource system of embodiment according to the present invention
The model appearance of figure；
Attached drawing 2 shows the silicon substrate antenna dynamic model signal based on Manufacturing resource system of embodiment according to the present invention
Graph model perspective；
Attached drawing 3 shows the radiating layer schematic diagram of embodiment according to the present invention；
Attached drawing 4 shows the coupling layer schematic diagram of embodiment according to the present invention；
Attached drawing 5 shows the micro-strip feed layer schematic diagram of embodiment according to the present invention.
In Fig. 2,1 radiating layer, 2 coupling layers, 3 micro-strip feed layers, 4 array antenna stratum, 5 radiation metal insulated columns, 6 feeds
Metal insulated column, the inner conductor of 7 feed connectors.
In Fig. 3,11 be radiation metal patch used by Fig. 21,12 be in Fig. 25 used by the first radiation metal every
From column, 13 be radiating layer Si substrate used by Fig. 21.
In Fig. 4,21 be the second radiation metal insulated column used by Fig. 25, and 22 be the first coupling used by 2 in Fig. 2
Layer Si substrate, 23 be the first feed metal insulated column used by Fig. 26, and 24 be in Fig. 22 used coupling gaps.
In Fig. 5,31 be microstrip-fed line used by Fig. 23, and 32 be the second coupling layer Si base used by Fig. 23
Plate, 33 4 metal ground layers used to be located at 3 bottoms in Fig. 2,34 be the second feed metal insulated column used by Fig. 26,
35 be the outer conductor for being located at 7 feed connector of 3 bottoms in Fig. 2.
Specific embodiment
The illustrative embodiments of the disclosure are more fully described below with reference to accompanying drawings.Although showing this public affairs in attached drawing
The illustrative embodiments opened, it being understood, however, that may be realized in various forms the disclosure without the reality that should be illustrated here
The mode of applying is limited.It is to be able to thoroughly understand the disclosure on the contrary, providing these embodiments, and can be by this public affairs
The range opened is fully disclosed to those skilled in the art.
Embodiment according to the present invention proposes a kind of silicon substrate antenna dynamic modeling system, as shown in Figure 1 and Figure 2, comprising:
Radiating layer (1), coupling layer (2), micro-strip feed layer (3), array antenna stratum (4), feed connector inner conductor (7), radiation
Layer (1) is placed in above coupling layer (2), and micro-strip feed layer (3) is placed in below coupling layer (2), and the inner conductor (7) of feed connector is logical
Cross micro-strip feed layer (3) and radiating layer (1), coupling layer (2) realizes radio frequency interconnection.It is radiating layer (1), coupling layer (2), microstrip-fed
Layer (3) is the single layer radio-frequency structure made of standard silicon process.
Radiating layer (1) uses quadrilateral structure shape, and the I-shaped internal with coupling layer (1) couples gap and formed by force mutually
Coupling, can the degree of coupling effectively between control unit realize broadband character, while can to avoid such as interdigitated construction profile its
His strong mutual coupling radiating element brought electrical connection problem when complete front is divided into submatrix.Secondly, using load radiation gold
Belong to insulated column (5), feed metal insulated column (6), it can be while adding unit mechanical strength, when significantly improving unit scan
Active standing-wave ratio.Radiating layer (1) used by low section wideband wide scan array antenna of the present invention, coupling layer (2),
Micro-strip feed layer (3) is all made of the realization of Si sill, and metal insulated column is formed using through silicon via TSV via metal, makes its tool
There are lightweight, micromation and high performance characteristic.
As shown in figure 3, radiating layer (1) includes radiation metal patch (11), multiple first radiation metal insulated columns (12), spoke
Penetrate a layer Si substrate (13), wherein it is internal that multiple first radiation metal insulated columns (12) are evenly distributed in radiating layer Si substrate (13)
Close to the surrounding of outer ledge, radiation metal patch (11) is located at radiating layer Si substrate (13) interior central area.
As shown in figure 4, coupling layer (2) includes the first coupling layer Si substrate (22), multiple second radiation metal insulated columns
(21), multiple first feed metal insulated columns (23), coupling gap (24), wherein multiple second radiation metal insulated columns (21)
Be evenly distributed in the internal outer ledge surrounding of the first coupling layer Si substrate (22), multiple second radiation metal insulated columns (21) it is upper
End and the upper end of the first coupling layer Si substrate (22) are in same level, the lower end of multiple second radiation metal insulated columns (21)
Positioned at the inside of the first coupling layer Si substrate (22), multiple first feed metal insulated columns (23) are with rectangular arranged in the first coupling
Layer Si substrate (22) interior central area, coupling gap (24) are located at multiple first feed metal insulated columns (23) of rectangular arranged
Medial center region, for forming strong mutual coupling with radiating layer (1)；It is the multiple when radiating layer (1) is placed in above coupling layer (2)
First radiation metal insulated column (12) docks one by one with the multiple second radiation metal insulated column (21), constitutes multiple radiation gold
Belong to insulated column (5).
Radiating layer (1) is placed in certain altitude above coupling layer (2), plays the role of wide angle matching layer in an array, can be with
It is effectively prevented from and uses medium matching layer and bring scans the blind spot problem mobile toward array normal direction.Second radiation metal
Insulated column (21) is located between radiating layer (1) and coupling layer (2), the first feed metal insulated column (23) be located at coupling layer (2) and
Between array antenna stratum (4), the first coupling layer Si substrate (22) is located at coupling layer (2).
As shown in figure 5, micro-strip feed layer (3) includes microstrip-fed line (31), the second coupling layer Si substrate (32), metal
Layer (33), multiple second feed metal insulated columns (34), feed connector outer conductor (35), wherein it is multiple second feed gold
Belong to insulated column (34) with rectangular arranged in second coupling layer Si substrate (32) interior central area；Micro-strip feed layer (3) is placed in coupling
When closing below layer (2), the multiple first feed metal insulated column (23) and the multiple second feed metal insulated column (34)
It docks one by one, constitutes multiple feed metal insulated columns (6).Feed metal insulated column (6) is with being located at coupling layer (2) and array antenna
Between layer (4).The impedance that microstrip-fed line (31) realizes feed structure to antenna converts.
Radiating layer (1), coupling layer (2), micro-strip feed layer (3), array antenna stratum (4) are the identical quadrangle of shape.
Multiple first radiation metal insulated columns (12), multiple second radiation metal insulated columns (21) are bilayer radially
Structure, after the first radiation metal insulated column (12), multiple second radiation metal insulated columns (21) are docked one by one, multiple radiation
Metal insulated column (5) forms double-layer structure radially.
Radiation metal patch (11) dimension adjustable, multiple first radiation metal insulated columns (12), multiple second radiation gold
It is adjustable to belong to the cavity size that insulated column (21) are formed, multiple first feed metal insulated columns (23), multiple second feed metals
The cavity size that insulated column (34) is formed is adjustable, radiating layer Si substrate (13), the first coupling layer Si substrate (22), the second coupling
Layer Si substrate (32) material is replaceable, couples gap (24) dimension adjustable, microstrip-fed line (31) dimension adjustable, and feed connects
The feeding classification for connecing the outer conductor (35) of device may be selected.
Microstrip-fed line (31) connect with the first feed connector (35) inner conductor, and metal ground layer (33) connects with the first feed
The outer conductor (35) for connecing device is connect with array antenna stratum (4).Microstrip-fed line (31), second coupling layer Si substrate (32) position
In micro-strip feed layer (3), the second feed metal insulated column (34) is located between coupling layer (2) and array antenna stratum (4), feed
The outer conductor (35) of connector is located at below metal ground layer (33).
Through silicon via is located at the port of micro-strip feed layer (3), can be used for substituting feed connector (7).Active circuit is located at gold
Below possession layer (33).Microstrip-fed line (31) is connect with the outer conductor (35) of feed connector by Manufacturing resource interface；Root
According to the port diagnostic of micro-strip feed layer (3), feed connector (7) is adjusted；Microstrip-fed line (31), through silicon via, feed
Connector (7) is connect with active circuit respectively.
Base workable for radiating layer Si substrate (13), the first coupling layer Si substrate (22), the second coupling layer Si substrate (32)
Plate material includes: High Resistivity Si (Si), silica (SiO2), low-temperature co-fired ceramics (LTCC), high-temperature co-fired ceramics (HTCC), light
Subband gap (PGB) material, high temperature superconducting materia (HTS), microwave board, organo-metallic material, selected material is according to using field
Scape is adjusted the match materials with active circuit.
Model radiating layer (1) of the present invention, coupling layer (2), micro-strip feed layer (3) structure size can be according to array or list
The requirement of antenna carries out dynamic optimization.According to the feature of feed port, micro-strip feed layer (3), feed connector (7) are adjusted
It is whole, it can be adapted to by micro-strip, TSV, connector with micro-system completion.Low section wideband wide scan array antenna of the present invention
Used radiating layer (1), coupling layer (2), micro-strip feed layer (3) are all made of the realization of Si sill, and metal insulated column uses TSV
Via metal forms, and makes it have lightweight, micromation and high performance characteristic.
The present invention has following remarkable advantage:
1, antenna substrate material is optional: baseplate material used in silicon substrate antenna dynamic model of the invention includes but unlimited
In High Resistivity Si (Si), silica (SiO2), low-temperature co-fired ceramics (LTCC), high-temperature co-fired ceramics (HTCC), photon band gap
(PGB) material, high temperature superconducting materia (HTS), microwave board, organo-metallic material etc., can be adjusted according to usage scenario, realize
With the match materials of active circuit.
2, each layer parameter is adjustable: silicon substrate antenna of the invention is using with the low close coupling wideband patch for cuing open feature of plane
Radiating element realizes that broadband is low and cuts open array antenna, according to the demand characteristics of usage scenario, aerial array spacing (single antenna ruler
It is very little), patch size, coupled chamber size it is adjustable, can the degree of coupling effectively between control unit, to optimize antenna spoke
Penetrate performance；Radiation is placed on certain altitude above coupling layer, plays the role of wide angle matching layer in an array, can effectively keep away
Exempt to use medium matching layer and bring scans the blind spot problem mobile toward array normal direction.Further, since cell spacing
It adjusts, the current loop greater than a wavelength may be will form between adjacent feed points, so that generating resonance influences antenna array
Scan performance.Therefore, wall is formed by radiation metal insulated column between adjacent array element in the design of array, so that adjacent cells
Between it is mutually isolated, to be effectively improved array scanning performance.
3, feeding classification is adjustable: silicon substrate antenna of the invention is using Manufacturing resource interface (microstrip-fed line (31) and feed
The interface of connector (35) interconnection), according to the feature of micro-strip feed layer (3) port, micro-strip feed layer, feed connector are carried out
Adjustment, can (Through Silicon Vias through silicon via can be replaced in antenna feed port by microstrip-fed line (31), through silicon via
For connector, reduce feeder loss, reduce section height, improve integrated level), feed connector (7) docked with active circuit, it is suitable
It is strong with property.
4, micro-system Manufacturing resource degree is high: silicon substrate antenna dynamic model material of the invention is optional, size adjustable, feed side
Formula is adjustable, and the connection types such as interconnection, vertical interconnection, connector blindmate in plate, integrated level height, flexibility ratio can be realized with micro-system
Height improves the freedom degree of micro-system Manufacturing resource.
More than, illustrative specific embodiment only of the invention, but scope of protection of the present invention is not limited thereto, appoints
In the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of, all by what those familiar with the art
It is covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be subject to the protection scope in claims.
Claims (10)
1. a kind of silicon substrate antenna dynamic modeling system characterized by comprising radiating layer (1), coupling layer (2), micro-strip feed layer
(3), array antenna stratum (4), feed connector inner conductor (7), radiating layer (1) is placed in above coupling layer (2), microstrip-fed
Layer (3) is placed in below coupling layer (2), the inner conductor (7) of feed connector by micro-strip feed layer (3) and radiating layer (1), couple
Layer (2) realizes radio frequency interconnection.
2. silicon substrate antenna dynamic modeling system as described in claim 1, which is characterized in that radiating layer (1), coupling layer (2), micro-
It is the single layer radio-frequency structure made of standard silicon process with feed layer (3).
3. silicon substrate antenna dynamic modeling system as claimed in claim 2, which is characterized in that radiating layer (1) includes radiation metal
Patch (11), multiple first radiation metal insulated columns (12), radiating layer Si substrate (13), wherein multiple first radiation metals every
It is evenly distributed in the internal surrounding close to outer ledge of radiating layer Si substrate (13) from column (12), radiation metal patch (11) is located at
Radiating layer Si substrate (13) interior central area.
4. silicon substrate antenna dynamic modeling system as claimed in claim 3, which is characterized in that coupling layer (2) includes the first coupling
Layer Si substrate (22), multiple second radiation metal insulated columns (21), multiple first feed metal insulated columns (23), coupling gap
(24), wherein
Multiple second radiation metal insulated columns (21) are evenly distributed in the internal outer ledge surrounding of the first coupling layer Si substrate (22),
The upper end of multiple second radiation metal insulated columns (21) and the upper end of the first coupling layer Si substrate (22) are more in same level
The lower end of a second radiation metal insulated column (21) is located at the inside of the first coupling layer Si substrate (22), multiple first feed metals
Insulated column (23), in first coupling layer Si substrate (22) interior central area, is coupled gap (24) and is located at rectangle row with rectangular arranged
Multiple first feed metal insulated column (23) medial center regions of column, for forming strong mutual coupling with radiating layer (1),
When radiating layer (1) is placed in above coupling layer (2), the multiple first radiation metal insulated column (12) and the multiple second
Radiation metal insulated column (21) docks one by one, constitutes multiple radiation metal insulated columns (5).
5. silicon substrate antenna dynamic modeling system as claimed in claim 4, which is characterized in that micro-strip feed layer (3) includes micro-strip
Feed line (31), the second coupling layer Si substrate (32), metal ground layer (33), multiple second feed metal insulated columns (34), feed
The outer conductor (35) of connector, wherein
Multiple second feed metal insulated columns (34) are with rectangular arranged in second coupling layer Si substrate (32) interior central area；
When micro-strip feed layer (3) is placed in below coupling layer (2), the multiple first feed metal insulated column (23) with it is the multiple
Second feed metal insulated column (34) docks one by one, constitutes multiple feed metal insulated columns (6).
6. silicon substrate antenna dynamic modeling system as claimed in claim 5, which is characterized in that microstrip-fed line (31) and feed connect
Inner conductor (7) connection of device is connect, metal ground layer (33) and the outer conductor (35) of feed connector connect with array antenna stratum (4)
It connects.
7. silicon substrate antenna dynamic modeling system as described in claim 1, which is characterized in that radiating layer (1), coupling layer (2), micro-
Band feed layer (3), array antenna stratum (4) are the identical quadrangle of shape.
8. silicon substrate antenna dynamic modeling system as claimed in claim 4, which is characterized in that the multiple first radiation metal every
It is radially double-layer structure from column (12), multiple second radiation metal insulated columns (21), the first radiation metal isolation
After column (12), multiple second radiation metal insulated columns (21) are docked one by one, multiple radiation metal insulated columns (5) are formed radially
Double-layer structure.
9. the silicon substrate antenna dynamic modeling system as described in claim 1-8 any one, which is characterized in that radiation metal patch
(11) dimension adjustable, the multiple first radiation metal insulated column (12), multiple second radiation metal insulated columns (21) are formed
Cavity size it is adjustable, the multiple first feed metal insulated column (23), multiple second feed metal insulated column (34) shapes
At cavity size it is adjustable, radiating layer Si substrate (13), the first coupling layer Si substrate (22), the second coupling layer Si substrate (32)
Material is replaceable, couples gap (24) dimension adjustable, microstrip-fed line (31) dimension adjustable, the outer conductor of feed connector
(35) feeding classification may be selected.
10. silicon substrate antenna dynamic modeling system as described in any one in claim 1-5, which is characterized in that radiating layer Si substrate
(13), baseplate material workable for the first coupling layer Si substrate (22), the second coupling layer Si substrate (32) includes: High Resistivity Si
(Si), silica (SiO2), low-temperature co-fired ceramics (LTCC), high-temperature co-fired ceramics (HTCC), photon band gap (PGB) material,
High temperature superconducting materia (HTS), microwave board, organo-metallic material.
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| CN111755815A (en) * | 2020-06-17 | 2020-10-09 | 中国电子科技集团公司第十四研究所 | Silicon-based antenna dynamic model based on heterogeneous integrated system |
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| CN102299409A (en) * | 2011-05-16 | 2011-12-28 | 电子科技大学 | Broadband dual polarized base station antenna applied to IMT-Advanced system |
| CN106898871A (en) * | 2017-01-22 | 2017-06-27 | 深圳市景程信息科技有限公司 | The wideband patch antenna of the aperture-coupled feed with dual polarization performance |
| CN206602180U (en) * | 2017-01-22 | 2017-10-31 | 深圳市景程信息科技有限公司 | Wideband dual polarized aperture-coupled feed antennas |
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|---|---|---|---|---|
| CN101399402A (en) * | 2008-09-27 | 2009-04-01 | 郝志强 | Waveguide split array antenna used for satellite communication |
| CN102299409A (en) * | 2011-05-16 | 2011-12-28 | 电子科技大学 | Broadband dual polarized base station antenna applied to IMT-Advanced system |
| CN106898871A (en) * | 2017-01-22 | 2017-06-27 | 深圳市景程信息科技有限公司 | The wideband patch antenna of the aperture-coupled feed with dual polarization performance |
| CN206602180U (en) * | 2017-01-22 | 2017-10-31 | 深圳市景程信息科技有限公司 | Wideband dual polarized aperture-coupled feed antennas |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111755815A (en) * | 2020-06-17 | 2020-10-09 | 中国电子科技集团公司第十四研究所 | Silicon-based antenna dynamic model based on heterogeneous integrated system |
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| CN109783899B (en) | 2023-06-30 |
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