CN109775671B - Ultra-pure gas purification system and process based on normal temperature adsorption process - Google Patents
Ultra-pure gas purification system and process based on normal temperature adsorption process Download PDFInfo
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Abstract
The present invention relates to purification of bulk gases used in the field of semiconductor chip manufacturing. An ultrapure gas purification system based on a normal temperature adsorption process comprises a single device with two adsorption reactors, corresponding switching valves, corresponding pipelines, a regenerated gas heater, a regenerated gas cooler and a control system; the adsorption reactor is respectively filled with two kinds of fillers, and deoxidizer and nickel catalyst are sequentially filled from the inflow side to the outflow side of the raw material gas. The process is simple, the impurity is removed by a one-step method, the cost of the nickel catalyst is far higher than that of the deoxidizer, the adsorption capacity of the deoxidizer to oxygen, water and carbon dioxide is higher than that of the nickel catalyst, the raw material gas is firstly purified by the deoxidizer, the ppm-level impurities in the raw material are firstly removed to 10ppb, and then the raw material gas is subjected to the nickel catalyst, and the nickel catalyst only needs to be filled with the adsorption capacity required for removing the 10ppb impurities, so that the filling capacity of the nickel catalyst with high cost can be reduced, and the purification cost is reduced.
Description
Technical Field
The invention relates to purification of bulk gas used in the field of manufacturing of conductor chips, in particular to a purification system for purifying nitrogen and argon into ultrapure gas based on a normal-temperature adsorption process.
Technical Field
The demand for bulk gases such as nitrogen and argon in the semiconductor chip manufacturing process mainly comes from cryogenic air separation, wherein the contents of oxygen, water, carbon dioxide, carbon monoxide, hydrogen and non-methane hydrocarbons as impurities are in ppm level, and the content of each impurity in the chip manufacturing process is generally less than 1ppb, so that the bulk gases need to be further purified to meet the process demand.
In the purification of the existing adsorption process, only oxygen, water and carbon dioxide can be removed, if carbon monoxide, hydrogen and non-methane hydrocarbons need to be further removed, a catalytic oxidation process needs to be added at the front end of the adsorption process, the catalytic oxidation process needs to heat gas to about 300 ℃ and then pass through a noble metal catalyst bed layer, and the purpose is to oxidize the carbon monoxide, the hydrogen and the non-methane hydrocarbons in the gas into water and carbon dioxide and then remove the water and the carbon dioxide in the rear end adsorption process, so that the cost of a purifier is increased, the operation cost is increased due to the reason of heating the gas to the reaction temperature, the complexity of the purifier is increased, and the operation reliability is reduced.
In the current adsorption process purification, a regenerated gas heater and a regenerated gas cooler are used for regenerating the two adsorption reactors through the switching of a high-temperature-resistant valve, so that a high-temperature corrugated pipe valve needs to be introduced into the system, and the valve can meet the current conditions of only one supplier in the United states, is high in cost and needs about twenty weeks in the cargo period.
Disclosure of Invention
The invention aims to solve the problems, and provides an ultrapure gas purification system based on a normal temperature adsorption process, which can greatly reduce the investment cost and the purification operation cost of a purifier, can miniaturize the purifier and reduce the occupied area between power plants, and on the other hand, adopts a mode of adopting 2 regenerated gas heaters and two regenerated gas coolers to avoid using high-temperature corrugated pipe valves, thereby greatly reducing the valve cost and the purchasing period and the supply period. In addition, the invention also provides an ultrapure gas purification based on the normal temperature adsorption process, which can remove oxygen, water, carbon dioxide, carbon monoxide, hydrogen and non-methane hydrocarbons in bulk gas to less than 1ppb in one step without introducing a catalytic oxidation process, thus avoiding the use of expensive noble metal catalysts.
In order to solve the problems, the invention adopts the following technical scheme: an ultrapure gas purification system based on a normal temperature adsorption process comprises a single device with two adsorption reactors, corresponding switching valves, corresponding pipelines, a regenerated gas heater, a regenerated gas cooler and a control system; the adsorption reactor is respectively filled with two kinds of fillers, and deoxidizer and nickel catalyst are sequentially filled from the inflow side to the outflow side of the raw material gas.
The gas inlet of the adsorption reactor is connected with the raw gas inlet through a raw gas input pipeline and a switching valve, and the gas outlet of the adsorption reactor is connected with the product gas outlet through a product gas output pipeline and a switching valve; the bypass on the raw material gas input pipeline is communicated with a regenerated gas output pipeline, a regenerated gas cooler and a switching valve are arranged on the regenerated gas output pipeline, and the regenerated gas output pipeline is communicated with a gas discharge port; the product gas output pipeline is connected with a regenerated gas input pipeline in a bypass way, and a regenerated gas heater and a switching valve are arranged on the regenerated gas input pipeline.
The regenerated gas input pipeline is connected with a hydrogen inlet through a pipeline, and a hydrogen inlet valve is arranged on the pipeline.
The switching valve adopts an electronic-grade diaphragm valve or a bellows valve.
The filling volume ratio Va/Vb of the nickel catalyst and the deoxidizer is=0.1-0.6; further preferably Va/vb=0.2 to 0.4.
The nickel catalyst adopts nickel catalyst with capability of removing trace oxygen, water, carbon dioxide, carbon monoxide, hydrogen and non-methane alkanes in gas; the nickel catalyst is prepared by loading 20-80 wt% of metallic nickel on carriers such as active alumina, zeolite molecular sieve, active carbon or silica gel; it is more preferable to carry 30 to 50wt% of the nickel catalyst.
The adsorption reactor bed is provided with a temperature measuring point, the control system comprises a CPU central control unit, and the CPU central control unit is respectively connected with a flow switch, a pressure sensor, a temperature sensor, a relay, a contactor and a display panel.
The invention relates to an ultrapure gas purification process based on a normal temperature adsorption process, wherein a standby adsorption reactor is respectively in a purification stage and a regeneration stage;
purification stage: after the raw material gas enters an adsorption reactor, firstly, oxygen, water and carbon dioxide are adsorbed by deoxidizer purification, ppm-level impurities in the raw material are firstly removed to 10ppb, then, nickel catalyst purification is carried out, and oxygen, water, carbon dioxide, carbon monoxide, hydrogen and non-methane hydrocarbons are further removed to below 1 ppb;
regeneration: the regenerated gas enters an adsorption reactor through a raw gas heater by induction method, and the high-temperature regenerated gas brings the water vapor adsorbed by the adsorption reactor in the purification stage out of a bed layer, and is cooled by a regenerated gas cooler and then is discharged through a discharge port at high position; and then carrying out hydrogenation regeneration, wherein hydrogen is used as reducing gas of the nickel catalyst bed layer and the deoxidizer bed layer to regenerate the adsorption reactor, and is cooled by a regenerated gas cooler and then is discharged at high level through a discharge port.
When the adsorption reactor is in the regeneration stage, the raw gas heater heats the regeneration gas to 280 ℃ and then inputs the regeneration gas into the adsorption reactor.
When the temperature measuring points arranged on the bed layer of the adsorption reactor detect that abnormal temperature rises and reach an interlocking value in the treatment and purification stage of the adsorption reactor, the system starts an interlocking shutdown program.
Compared with similar products in the field, the invention has outstanding substantive characteristics:
1. the system has simple structure, two adsorption reactors are one by one, and after adsorption saturation, on-line automatic regeneration is needed to recover the adsorption activity, and the two adsorption reactors are respectively in the normal-temperature adsorption purification and regeneration standby stages so as to achieve the aim of continuous on-line operation of the purifier;
2. the regenerated gas heater is separated from the adsorption reactor, so that the problems of uneven flow velocity of gas in the container, difficulty in forming stable turbulence and overlarge wall effect caused by the way of arranging the heater in the reactor are avoided;
3. the regenerated gas cooler cools the regenerated gas of the adsorption reactor, and then is discharged from the vent after passing through the valve, so that the gas temperature is reduced, and the control can be realized by adopting a general valve in the electronic industry, thereby greatly reducing the system cost;
4. the process is simple, the impurity is removed by a one-step method, the cost of the nickel catalyst is far higher than that of the deoxidizer, the adsorption capacity of the deoxidizer to oxygen, water and carbon dioxide is higher than that of the nickel catalyst, the raw material gas is firstly purified by the deoxidizer, the ppm-level impurities in the raw material are firstly removed to 10ppb, and then the raw material gas is subjected to the nickel catalyst, and the nickel catalyst only needs to be filled with the adsorption capacity required for removing the 10ppb impurities, so that the filling capacity of the nickel catalyst with high cost can be reduced, and the purification cost is reduced.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention.
In the figure: 1. a raw material gas inlet, 2, a product gas outlet, 3, a vent, 4, a nickel catalyst layer, 5, a deoxidizer layer, 6, a hydrogen inlet, 7, a hydrogen inlet valve, 8, a raw material gas input pipeline, 9, a regenerated gas output pipeline, 10, a product gas output pipeline, 11 and a regenerated gas input pipeline;
A. adsorption reactors a, B, adsorption reactors B, A1, switching valves A1, A2, switching valves A2, A3, switching valves A3, A4, switching valves A4, B1, switching valves B1, B2, switching valves B2, B3, switching valves B3, B4, switching valve B4;
HA. Regeneration gas heater HA, HB, regeneration gas heater HB;
TA1, HA temperature control points of a regenerated gas heater, TB1, HB temperature control points of a regenerated gas heater, TA2, temperature measurement points of a bed layer of an adsorption reactor A, TB2 and temperature measurement points of a bed layer of an adsorption reactor B;
EA. Regeneration gas cooler EA, EB, regeneration gas cooler EB.
Detailed Description
The invention is further described below with reference to fig. 1:
the purification system of the invention consists of two adsorption reactors A and B which are automatically switched, corresponding switching valves A1-A4 and B1-B4, corresponding pipelines, corresponding regenerated gas heaters HA and HB and corresponding control systems; the adsorption reactors A and B are respectively filled with two kinds of fillers, and deoxidizer and nickel catalyst are sequentially filled from the inflow side to the outflow side of the raw material gas; when the filling amount of the nickel catalyst in the adsorption reactor is Va and the filling amount of the deoxidizer is Vb, the filling ratio Va/Vb of the nickel catalyst to the deoxidizer is 0.1 to 0.6, more preferably 0.2 to 0.4.
The gas inlet of the adsorption reactor is connected with the raw gas inlet 1 through a raw gas input pipeline 8 and a switching valve, and the gas outlet of the adsorption reactor is connected with the product gas outlet 2 through a product gas output pipeline 10 and a switching valve; the bypass on the raw material gas input pipeline is communicated with a regenerated gas output pipeline 9, a regenerated gas cooler and a switching valve are arranged on the regenerated gas output pipeline, and the regenerated gas output pipeline is communicated with a gas discharge port; the product gas output pipeline is connected with a regenerated gas input pipeline 11 in a bypass mode, and a regenerated gas heater and a switching valve are installed on the regenerated gas input pipeline.
Taking the purification stage of the adsorption reactor A as an example, raw material gas enters the purifier from the raw material gas inlet 1, the switching valve A1 and the switching valve A4 are in an open state, and the switching valve A2 and the switching valve A3 are in a closed state. After entering the adsorption reactor A, the raw material gas firstly contacts with the deoxidizer bed layer 5, oxygen, water and carbon dioxide in the gas are adsorbed to less than 10ppb by the deoxidizer bed layer 5, wherein the water and the carbon dioxide are physically adsorbed, and the oxygen is chemically adsorbed, and the adsorption principle is as follows: AO+O 2 --→AO 2 Wherein AO refers to the deoxidizing active ingredient metal oxide in the deoxidizing agent;
the oxygen, water and carbon dioxide in the gas passing through the deoxidizer bed are removed to below 10ppb and then continuously flow into the nickel catalyst bed 4, and the nickel catalyst bed 4 can further remove the oxygen, water, carbon dioxide, carbon monoxide, hydrogen and non-methane hydrocarbons in the gas to below 1 ppb.
Wherein the nickel catalyst bed layer 4 is filled with a regenerated nickel catalyst which has the capability of removing trace oxygen, water, carbon dioxide, carbon monoxide, hydrogen and non-methane alkanes in gas. Specifically, the nickel catalyst can be prepared by supporting 20 to 80wt% of metallic nickel on a carrier such as activated alumina, zeolite molecular sieve, activated carbon or silica gel. It is more preferable to use a nickel catalyst supported on 30 to 50 wt%.
The regeneration process is performed by the central control unit in a time-series controlled manner, and the adsorption reactor B is described as an example of the regeneration process of the adsorption reactor with reference to fig. 1.
1) Pressure relief:
initial state: the valves B1-B4 are in a closed state, and the pressure in the adsorption reactor B is the use pressure in the previous purification stage and is generally 0.6-0.8 Mpa; 5 seconds after the pressure relief operation starts, the central control unit gives a valve B2 valve opening signal, and the valve B2 is opened; the gas in the adsorption reactor B finally flows to a high-level emptying position arranged outdoors through a B2 valve and an emptying port 3 to be emptied until the pressure in the adsorption reactor B is reduced to the atmospheric pressure, and the process lasts for 5-8 minutes.
2) Heating and purging 1:
the initial state is a pressure relief completion state, a valve B3 is opened, a part of product gas from the front end of a product gas outlet 2 is used as regenerated gas, flows into an adsorption reactor B through a regenerated gas heater HB and finally flows to a high-level emptying position arranged outdoors through a regenerated gas cooler EB, a valve B2 and an emptying port 3, and meanwhile, the regenerated gas heater HB is started to heat so as to heat the regenerated gas to 300 ℃ required by a regeneration process; the duration of the process is 6-8 hours.
Further, in the process, the high-temperature regenerated gas brings the water vapor adsorbed by the adsorption reactor B in the purification stage out of the bed layer and is discharged at high position through the discharge port 3;
further, the regeneration gas cooler EB is used for cooling the high-temperature regeneration gas to be close to normal temperature through an air cooling mode and then discharging the high-temperature regeneration gas. Thus, the valve B2 used at normal temperature can be protected, and the risk of high-temperature scalding of the pipeline between the emptying pipeline and the outdoor high-level emptying position is reduced.
Further, the regenerated gas flow is 5% of the treatment gas flow of the purifier; the process pressure is normal pressure.
3) Hydrogenation regeneration:
the initial state is the heating purge 1 state. The hydrogen inlet valve 7 is opened, a certain amount of high-purity hydrogen is added into the regenerated gas, and the hydrogen is used as the reducing gas of the nickel catalyst bed layer and the deoxidizer bed layer to regenerate the adsorption reactor B. The duration of the process is 2-4 hours.
Further, the hydrogen addition amount is 3% of the regeneration amount, and the process pressure is normal pressure.
4) Heating and purging 2:
the initial state is a hydrogenation regeneration state. The hydrogen inlet valve 7 is closed, and the high-temperature regenerated gas brings water generated by the adsorption reactor B in the hydrogenation regeneration stage out of the bed layer in a gaseous form and is discharged at a high position through the discharge port 3.
The duration of the process is 2-4 hours.
Further, taking oxygen as an example, the principle of hydrogenation reduction is: AO (AO) 2 +H 2 --→AO+H 2 O。
5) And (3) cooling:
the initial state is the heating purge 2 state. The regeneration gas heater HB stops heating, and the regeneration gas at normal temperature brings out the heat of the adsorption reactor until the reactor is cooled to normal temperature. The duration of the process is 8-10 hours.
6) Pressurizing for standby:
the initial state is a cooling state, the valve B2 is closed, the regenerated gas starts to charge the adsorption reactor B through the valve B3, the valve B3 is closed when the pressure of the adsorption reactor B reaches the normal working pressure of the purifier, the adsorption reactor B enters a standby stage, the purification state is automatically entered after the purification period of the adsorption reactor A is finished, and the adsorption reactor A simultaneously enters an automatic regeneration process.
Example 1
A phi 159 stainless steel seamless tube was selected, the filling section height was 1000mm, the upper nickel catalyst filling height was 200mm, and the lower deoxidizer filling height was 800mm, as the adsorption reactor a.
The adsorption reactor a was regenerated under the following conditions.
The flow rate of the regenerated nitrogen was 2.5Nm 3 And/h, heating the HA by a regeneration gas heater to 300 ℃, adding hydrogen with the addition amount of 1.25SLPM, heating and purging for 1 hour, hydrogenating and regenerating for 2 hours, heating and purging for 2 hours, and cooling for 8 hours.
Further, the raw material gas was purified by adsorption at room temperature under the following conditions.
Nitrogen gas containing 3ppm of oxygen, 3ppm of water, 1ppm of carbon dioxide, 1ppm of carbon monoxide and 1ppm of hydrogen was introduced into the reactor from the feed gas inlet 1, passed through the valve A1 and the valve of the adsorption reactor A, A, and finally discharged through the product gas outlet 2. The impurity indexes are detected at the product gas outlet 2. The pressure of the feed gas in the process was 0.7MPa, flow rate 40Nm 3 And/h, wherein the temperature is 25 ℃ at normal temperature.
The time from the start of the introduction of the raw material gas to the detection of the first penetrating component of oxygen was 145 hours.
Comparative example 1
A Φ159 stainless steel seamless tube was selected, and the filling section height was 1000mm, and the entire filling was filled with deoxidizer as the adsorption reactor a.
The adsorption reactor a was regenerated under the following conditions.
The flow rate of the regenerated nitrogen was 2.5Nm 3 And/h, heating the HA by a regeneration gas heater to 300 ℃, adding hydrogen with the addition amount of 1.25SLPM, heating and purging for 1 hour, hydrogenating and regenerating for 2 hours, heating and purging for 2 hours, and cooling for 8 hours.
Further, the raw material gas was purified by adsorption at room temperature under the following conditions.
Nitrogen gas containing 3ppm of oxygen, 3ppm of water, 1ppm of carbon dioxide, 1ppm of carbon monoxide and 1ppm of hydrogen was introduced into the reactor from the feed gas inlet 1, passed through the valve A1 and the valve of the adsorption reactor A, A, and finally discharged through the product gas outlet 2. The impurity indexes are detected at the product gas outlet 2. The feed gas pressure in the process was 0.7MPa and the flow rate was 40Nm 3 And/h, wherein the temperature is 25 ℃ at normal temperature.
The purification process is influenced by the adsorption characteristic of deoxidizers, and only three impurities of oxygen, water and carbon dioxide can be adsorbed.
The time from the start of the introduction of the raw material gas to the detection of the first penetrating component of water was 166 hours.
Comparative example 2
A Φ159 stainless steel seamless tube was selected, and the filling section height was 1000mm, and the whole was filled with nickel catalyst as an adsorption reactor a.
The adsorption reactor a was regenerated under the following conditions.
The flow rate of the regenerated nitrogen was 2.5Nm 3 And/h, heating the HA by a regeneration gas heater to 300 ℃, adding hydrogen with the addition amount of 1.25SLPM, heating and purging for 1 hour, hydrogenating and regenerating for 2 hours, heating and purging for 2 hours, and cooling for 8 hours.
Further, the raw material gas was purified by adsorption at room temperature under the following conditions.
Nitrogen gas containing 3ppm of oxygen, 3ppm of water, 1ppm of carbon dioxide, 1ppm of carbon monoxide and 1ppm of hydrogen was introduced into the reactor from the feed gas inlet 1, passed through the valve A1 and the valve of the adsorption reactor A, A, and finally discharged through the product gas outlet 2. The impurity indexes are detected at the product gas outlet 2. The feed gas pressure in the process was 0.7MPa and the flow rate was 40Nm 3 And/h, wherein the temperature is 25 ℃ at normal temperature.
The time from the start of the introduction of the raw material gas to the detection of the first penetrating component of oxygen was 55 hours.
The three filling modes of example 1, comparative example 1 and comparative example 2 are summarized in Table 1
TABLE 1
As is evident from example 1 and comparative example 1, the penetration time was shorter in the former than in the latter, compared with the adsorption reactor bed packed with 200mm nickel catalyst and the adsorption reactor bed packed with 800mm deoxidizer as a whole. The latter, however, does not remove carbon monoxide and hydrogen and the purification requires an oxidation step at the front end that introduces expensive palladium-containing oxidation catalysts for high temperature use. Therefore, the composite bed layer filled according to a certain proportion can greatly reduce the manufacturing cost of the purifier and the running cost of the purifier.
As is clear from example 1 and comparative example 2, the penetration time of the adsorption reactor bed packed with 200mm nickel catalyst and 800mm adsorption reactor bed packed with nickel catalyst was significantly longer than that of the adsorption reactor bed packed with nickel catalyst. Because the main impurities of the cryogenic air separation plant are oxygen, water and carbon dioxide, and the adsorption capacity of the deoxidizer to the oxygen, water and carbon dioxide is larger than that of the nickel catalyst, the composite bed layer filled according to a certain proportion not only can fully adsorb the oxygen, water, carbon dioxide, carbon monoxide and hydrogen, but also can greatly reduce the loading quantity of the nickel catalyst with higher cost, greatly increase the penetration time, reduce the running cost of the purifier, further can be miniaturized of the purifier and reduce the occupied area of a power plant.
Claims (10)
1. An ultrapure gas purification system based on a normal temperature adsorption process is characterized in that: comprises a standby two adsorption reactors, corresponding switching valves, corresponding pipelines, a regeneration gas heater, a regeneration gas cooler and a control system; the adsorption reactor is respectively filled with two fillers, a deoxidizer and a nickel catalyst are sequentially filled from the inflow side to the outflow side of raw material gas, the filling volume ratio Va/vb=0.1-0.6 of the nickel catalyst and the deoxidizer, the nickel catalyst adopts a nickel catalyst with the capability of removing trace oxygen, water, carbon dioxide, carbon monoxide, hydrogen and non-methane hydrocarbons in gas, and the nickel catalyst is prepared by loading 20-80 wt% of metallic nickel on an active alumina, zeolite molecular sieve, active carbon or silica gel carrier.
2. The ultra-pure gas purification system based on the normal temperature adsorption process according to claim 1, wherein: the gas inlet of the adsorption reactor is connected with the raw gas inlet through a raw gas input pipeline and a switching valve, and the gas outlet of the adsorption reactor is connected with the product gas outlet through a product gas output pipeline and a switching valve; the bypass on the raw material gas input pipeline is communicated with a regenerated gas output pipeline, a regenerated gas cooler and a switching valve are arranged on the regenerated gas output pipeline, and the regenerated gas output pipeline is communicated with a gas discharge port; the product gas output pipeline is connected with a regenerated gas input pipeline in a bypass way, and a regenerated gas heater and a switching valve are arranged on the regenerated gas input pipeline.
3. The ultra-pure gas purification system based on the normal temperature adsorption process according to claim 1, wherein: the regenerated gas input pipeline is connected with a hydrogen inlet through a pipeline, and a hydrogen inlet valve is arranged on the pipeline.
4. The ultra-pure gas purification system based on the normal temperature adsorption process according to claim 1, wherein: the switching valve adopts an electronic-grade diaphragm valve or a bellows valve.
5. The ultra-pure gas purification system based on the normal temperature adsorption process according to claim 1, wherein: the filling volume ratio Va/Vb of the nickel catalyst and the deoxidizer is=0.2-0.4.
6. The ultra-pure gas purification system based on the normal temperature adsorption process according to claim 1, wherein: the nickel catalyst is prepared by loading 30-50wt% of metallic nickel on an active alumina, zeolite molecular sieve, active carbon or silica gel carrier.
7. The ultra-pure gas purification system based on the normal temperature adsorption process according to claim 1, wherein: the adsorption reactor bed is provided with a temperature measuring point, the control system comprises a CPU central control unit, and the CPU central control unit is respectively connected with a flow switch, a pressure sensor, a temperature sensor, a relay, a contactor and a display panel.
8. An ultrapure gas purification process based on a normal temperature adsorption process, which adopts the ultrapure gas purification system based on the normal temperature adsorption process as claimed in claim 1, and is characterized in that: a standby adsorption reactor is respectively in a purification stage and a regeneration stage;
purification stage: after the raw material gas enters an adsorption reactor, firstly, oxygen, water and carbon dioxide are adsorbed by deoxidizer purification, ppm-level impurities in the raw material are firstly removed to 10ppb, then, nickel catalyst purification is carried out, and oxygen, water, carbon dioxide, carbon monoxide, hydrogen and non-methane hydrocarbons are further removed to below 1 ppb;
regeneration: the regenerated gas enters an adsorption reactor through a raw gas heater by induction method, and the high-temperature regenerated gas brings the water vapor adsorbed by the adsorption reactor in the purification stage out of a bed layer, and is cooled by a regenerated gas cooler and then is discharged through a discharge port at high position; and then carrying out hydrogenation regeneration, wherein hydrogen is used as reducing gas of the nickel catalyst bed layer and the deoxidizer bed layer to regenerate the adsorption reactor, and is cooled by a regenerated gas cooler and then is discharged at high level through a discharge port.
9. The ultra-pure gas purification process based on the normal temperature adsorption process according to claim 8, wherein: when the adsorption reactor is in the regeneration stage, the raw gas heater heats the regeneration gas to 280 ℃ and then inputs the regeneration gas into the adsorption reactor.
10. The ultra-pure gas purification process based on the normal temperature adsorption process according to claim 8, wherein: when the adsorption reactor processes the purification stage, the system starts the interlocking shutdown procedure when the temperature measuring point arranged on the bed layer of the adsorption reactor detects that the abnormal temperature rises and reaches the interlocking value.
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| CN110302630A (en) * | 2019-07-18 | 2019-10-08 | 大连中鼎化学有限公司 | A kind of purification devices and its technique for purified gases preparation hyperpure gas |
| CN110282608A (en) * | 2019-07-18 | 2019-09-27 | 大连中鼎化学有限公司 | A kind of purification devices and its technique for nitrogen, oxygen, argon gas and helium |
| CN111974445B (en) * | 2020-08-24 | 2023-01-17 | 大连华邦化学有限公司 | Inert gas purification catalyst, raw material composition and preparation method |
| CN111847399B (en) * | 2020-08-27 | 2021-08-31 | 杭州普昌科技有限公司 | Efficient nitrogen purification device and purification process |
| CN114620694A (en) * | 2020-12-10 | 2022-06-14 | 中国科学院大连化学物理研究所 | Device and method for removing reducing gas |
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