CN109768461A - A kind of 1064nm laser - Google Patents
A kind of 1064nm laser Download PDFInfo
- Publication number
- CN109768461A CN109768461A CN201910217740.3A CN201910217740A CN109768461A CN 109768461 A CN109768461 A CN 109768461A CN 201910217740 A CN201910217740 A CN 201910217740A CN 109768461 A CN109768461 A CN 109768461A
- Authority
- CN
- China
- Prior art keywords
- laser
- total reflective
- light path
- lens combination
- reflective mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011148 porous material Substances 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 230000010287 polarization Effects 0.000 claims abstract description 19
- 230000003287 optical effect Effects 0.000 claims description 19
- 238000009738 saturating Methods 0.000 claims description 3
- 238000010304 firing Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 12
- 238000005520 cutting process Methods 0.000 abstract description 5
- 230000006872 improvement Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Abstract
It include semiconductor side pump module in the shell the invention discloses a kind of 1064nm laser, including shell, which is equipped with the first lens combination light path output and the second lens combination light path output；Acoustooptic switch, the first pore diaphragm and the first total reflective mirror are successively arranged outside first lens combination light path output of semiconductor side pump module, polarization combination piece, the second pore diaphragm and outgoing mirror, the output rating T=13%-32% of the outgoing mirror are successively arranged outside second lens combination light path output.1064nm laser provided by the invention, hot spot deviation value is low, and the quality of light beam is high and stablizes, and the cut surface on hard material is smooth, is able to achieve accurate cutting.
Description
Technical field
The present invention relates to hard material laser, ablation process field more particularly to a kind of 1064nm lasers.
Background technique
Hard raw material needs to be used as product after removal processing and be applied in corresponding field.Hard material
Man-hour requirement is being added to cut different sides.Currently, mostly using machine cuts greatly to the manufacturing process of hard material, beating by hand
Grinding and polishing light etc., it is complicated for operation, wherein machine cuts need the component that runs at high speed, such as saw disc, and when fast turn-around exists
The swing of certain amplitude causes accuracy low, and the component of movement is easy to raise in the dust generated when cutting superhard material, dirty
Dye is big, and the noise of machine cuts is also big.
With the continuous maturation of laser generator, utilization of the laser in cutting is also more and more extensive.In order to cut hard
Laser power needed for material is higher.However, powerful laser pumps meeting due to it compared with lower-powered laser
A large amount of heat is generated, it is unstable that the thermal lens of the too high generation of heat will lead to resonant cavity, to cause beam quality poor.It is many
Hard material price is extremely expensive and frangible, so the requirement of processing yields is high.And infrared laser on the market is wanted at present
The beam quality that power is inadequate or power is enough is insufficient, and the yields of work piece is very low.In addition, current laser
The volume of device is larger, and contains the light of more different wave length in light beam, and beam quality is lower, can not be suitable for high-end superhard material
Precision Machining field.
Summary of the invention
The object of the present invention is to provide a kind of 1064nm laser, the quality of light beam is high and stablizes, on hard material
Cut surface it is smooth, be able to achieve accurate cutting.
To achieve the above object, the present invention provides a kind of 1064nm laser, including shell, includes partly leading in the shell
Side pump module, the semiconductor side pump module are equipped with the first lens combination light path output and the second lens combination light path output；Semiconductor side pumps mould
It is successively arranged acoustooptic switch, the first pore diaphragm and the first total reflective mirror outside first lens combination light path output of block, second optical path is defeated
Polarization combination piece, the second pore diaphragm and outgoing mirror, the output rating T=13%-32% of the outgoing mirror are successively arranged outside outlet.
As a further improvement of the present invention, the first lens combination light path output of the semiconductor side pump module and acoustooptic switch it
Between be equipped with the second total reflective mirror, the incidence of second total reflective mirror and optical path and angle of reflection are 40 ° -60 °.
As a further improvement of the present invention, the second lens combination light path output and polarization combination of the semiconductor side pump module
Third total reflective mirror is equipped between piece, the incidence angle and angle of reflection of the third total reflective mirror and optical path are 40 ° -60 °.
As a further improvement of the present invention, the outgoing mirror, the second pore diaphragm, polarization combination piece, third are all-trans
Mirror, semiconductor side pump module, the second total reflective mirror, acoustooptic switch, the first pore diaphragm and the first total reflective mirror constitute U-shaped resonant cavity.
As a further improvement of the present invention, the polarization combination piece includes the first polarizing film and second being parallel to each other
Polarizing film, both first polarizing film and the second polarizing film are sequentially arranged and perpendicular with optical path direction along optical path direction, and two
The saturating vibration direction of piece polarizing film is perpendicular.
As a further improvement of the present invention, the aperture of the first pore diaphragm and the second pore diaphragm is 0.5-
1.4mm；The output rating T=20% of outgoing mirror.
As a further improvement of the present invention, the housing sidewall is equipped with the protection eyeglass opposite with outgoing mirror.
Beneficial effect
Compared with prior art, the advantages of 1064nm laser of the invention are as follows:
1, it by the outgoing mirror of the first total reflective mirror of setting and part reflection, allows from two optical outputs of semiconductor side pump module
The photon that end issues reflects between the first total reflective mirror and outgoing mirror, and constantly moves back and forth generation oscillation, when operation constantly with
Be excited that particle meets and generates stimulated radiation, the photon along axis operation will be constantly proliferated, intracavitary the is formationed direction of propagation unanimously,
Frequency and the identical strong beam of phase.The quality of its light beam is high and stablizes, and the cut surface on hard material is smooth, is able to achieve essence
Definitely cut.
2, the output rating T=13%-32% of outgoing mirror, hot spot deviation value is low, and the laser beam of output shakes small, quality
Stablize, when cutting hard brittle material, hard brittle material is not easy fragmentation.Output rating is too low, and laser is easy to burn out, and the service life is short；It is defeated
Extracting rate is too high, it is difficult to reach effective oscillation effect.
3, by the second total reflective mirror of setting and third total reflective mirror, turn to the optical path in 1064nm laser housing,
Be conducive to shorten the entire length of shell.Further, resonant cavity is arranged to U-shaped, can shorten shell length approximately half of
Simultaneously, avoid its width excessive, it can be achieved that 1064nm laser miniaturization, reduce occupied area, convenient transportation and storage.
Through the following description and in conjunction with the attached drawings, the present invention will become more fully apparent, these attached drawings are used to explain the present invention
Embodiment.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is the schematic diagram of internal structure of 1064nm laser；
Fig. 2 is the arrangement schematic diagram of two pieces of polarizing films in polarization combination piece.
Specific embodiment
The embodiment of the present invention is described referring now to the drawings.
Embodiment
A specific embodiment of the invention is as depicted in figs. 1 and 2, a kind of 1064nm laser, including shell 15, the shell
It include semiconductor side pump module 1 in body 15, semiconductor side pump module 1 can emit the laser of 1064nm, but swashing due to its transmitting
Light quality is lower, needs to perform corresponding processing before projecting in laser.The semiconductor side pump module 1 is equipped with the first light
Road output end and the second lens combination light path output；Be successively arranged outside first lens combination light path output of semiconductor side pump module 1 acoustooptic switch 2,
First pore diaphragm 3 and the first total reflective mirror 4.First total reflective mirror 4 and optical path are perpendicular.It is successively set outside second lens combination light path output
There are polarization combination piece 7, the second pore diaphragm 8 and outgoing mirror 9, the output rating T=13%-32% of the outgoing mirror 9.Acoustooptic switch
2 be to act the function element for adjusting Q in laser cavity, is inserted into as a kind of controlled variable loss.Pass through laser Q-switching
Continuous laser power output can be made to be converted into the pulsed laser output with high-peak power.
The second total reflective mirror 5 is equipped between the first lens combination light path output and acoustooptic switch 2 of the semiconductor side pump module 1, it should
Incidence and angle of reflection of second total reflective mirror 5 with optical path are 40 ° -60 °.Second optical output of the semiconductor side pump module 1
Third total reflective mirror 6 is equipped between end and polarization combination piece 7, the third total reflective mirror 6 and the incidence angle and angle of reflection of optical path are
40°-60°.In the present embodiment, incidence and angle of reflection of second total reflective mirror 5 with optical path are 45 °, third total reflective mirror 6 and optical path
Incidence angle and angle of reflection are 45 °.
The outgoing mirror 9, the second pore diaphragm 8, polarization combination piece 7, third total reflective mirror 6, semiconductor side pump module 1,
Two total reflective mirrors 5, acoustooptic switch 2, the first pore diaphragm 3 and the first total reflective mirror 4 constitute U-shaped resonant cavity.
Polarization combination piece 7 includes the first polarizing film 71 and the second polarizing film 72 that are parallel to each other, the first polarizing film 71 and the
Both two polarizing films 72 are sequentially arranged and perpendicular with optical path direction along optical path direction, and the saturating vibration direction of two panels polarizing film is mutually hung down
Directly, it is ensured that finally going out light is circular polarization state.The aperture of first pore diaphragm 3 and the second pore diaphragm 8 is 0.5-1.4mm.
In the present embodiment, the aperture of the first pore diaphragm 3 and the second pore diaphragm 8 is 0.8mm.Polarization combination piece 7 is for filtering out
Veiling glare cooperates pore diaphragm, beam quality can be improved, overcome the problems, such as that the laser-quality of semiconductor side pump module 1 itself is low.When defeated
When the output rating T=20% of appearance 9, hot spot deviation value (deviation) be can control lower than 5%.
15 side wall of shell is equipped with the protection eyeglass 10 opposite with outgoing mirror 9.
1064nm laser at runtime, the first lens combination light path output and the second lens combination light path output of semiconductor side pump module 1
Issue laser.The laser of second lens combination light path output passes through acoustooptic switch 2 after the reflection of the second total reflective mirror 5, and acoustooptic switch 2 makes to connect
Continuous laser power output is converted into the pulsed laser output with high-peak power.Then laser passes through the first pore diaphragm 3, quilt
Again successively by the first pore diaphragm 3, acoustooptic switch 2, the second total reflective mirror 5 and semiconductor side pump after the reflection of first total reflective mirror 4
Module 1, and be pierced by from the first lens combination light path output of semiconductor side pump module 1.The laser exported from the first lens combination light path output passes through
After third total reflective mirror 6 reflects, by polarization combination piece 7, after the first polarizing film 71 and the processing of the second polarizing film 72, from polarization group
Close the rounded polarization state of laser that piece 7 projects.Laser successively passes through the second pore diaphragm 8 and outgoing mirror 9 again.Due to outgoing mirror 9
Output rating T=20%, only 20% laser light outgoing mirror 9 projects, remaining 80% laser original road is reflected again humorous
It is vibrated in vibration chamber.
Combining most preferred embodiment above, invention has been described, but the invention is not limited to implementations disclosed above
Example, and various modifications, equivalent combinations according to the essence of the present invention should be covered.
Claims (7)
1. a kind of 1064nm laser, including shell (15), which is characterized in that include that semiconductor side pumps mould in the shell (15)
Block (1), the semiconductor side pump module (1) are equipped with the first lens combination light path output and the second lens combination light path output；Semiconductor side pump module
(1) it is successively arranged acoustooptic switch (2), the first pore diaphragm (3) and the first total reflective mirror (4) outside the first lens combination light path output, it is described
Polarization combination piece (7), the second pore diaphragm (8) and outgoing mirror (9), the outgoing mirror are successively arranged outside second lens combination light path output
(9) output rating T=13%-32%.
2. a kind of 1064nm laser according to claim 1, which is characterized in that the semiconductor side pump module (1)
The second total reflective mirror (5) are equipped between first lens combination light path output and acoustooptic switch (2), the incidence of the second total reflective mirror (5) and optical path
It is 40 ° -60 ° with angle of reflection.
3. a kind of 1064nm laser according to claim 2, which is characterized in that the semiconductor side pump module (1)
Third total reflective mirror (6) are equipped between second lens combination light path output and polarization combination piece (7), which enters with optical path
Firing angle and angle of reflection are 40 ° -60 °.
4. a kind of 1064nm laser according to claim 3, which is characterized in that the outgoing mirror (9), the second pore light
Late (8), polarization combination piece (7), third total reflective mirror (6), semiconductor side pump module (1), the second total reflective mirror (5), acoustooptic switch
(2), the first pore diaphragm (3) and the first total reflective mirror (4) constitute U-shaped resonant cavity.
5. a kind of 1064nm laser according to claim 1, which is characterized in that the polarization combination piece (7) includes phase
Both mutually parallel the first polarizing film (71) and the second polarizing film (72), first polarizing film (71) and second polarizing film (72)
It is sequentially arranged along optical path direction and perpendicular with optical path direction, the saturating vibration direction of two panels polarizing film is perpendicular.
6. according to claim 1 to a kind of 1064nm laser described in 5 any one, which is characterized in that first pore
The aperture of diaphragm (3) and the second pore diaphragm (8) is 0.5-1.4mm；The output rating T=20% of outgoing mirror (9).
7. a kind of 1064nm laser according to claim 6 any one, which is characterized in that shell (15) side wall
It is equipped with the protection eyeglass (10) opposite with outgoing mirror (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910217740.3A CN109768461A (en) | 2019-03-21 | 2019-03-21 | A kind of 1064nm laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910217740.3A CN109768461A (en) | 2019-03-21 | 2019-03-21 | A kind of 1064nm laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109768461A true CN109768461A (en) | 2019-05-17 |
Family
ID=66459627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910217740.3A Pending CN109768461A (en) | 2019-03-21 | 2019-03-21 | A kind of 1064nm laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109768461A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117277038A (en) * | 2023-11-21 | 2023-12-22 | 武汉光谷航天三江激光产业技术研究院有限公司 | Single-end pumping airborne pulse laser based on double-crystal serial connection and control method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5278852A (en) * | 1990-10-11 | 1994-01-11 | Kigre, Inc. | Intra-cavity high order harmonic laser |
| CN101764348A (en) * | 2010-01-07 | 2010-06-30 | 武汉华工激光工程有限责任公司 | Semiconductor pump ultraviolet laser |
| CN102593366A (en) * | 2003-12-15 | 2012-07-18 | 株式会社半导体能源研究所 | Light-emitting device and electronic devices |
| CN107658687A (en) * | 2016-07-25 | 2018-02-02 | 中国科学院物理研究所 | The self-starting femtosecond titanium precious stone laser oscillator of synchronous pump |
| CN209675667U (en) * | 2019-03-21 | 2019-11-22 | 广州安特激光技术有限公司 | A kind of 1064nm laser |
-
2019
- 2019-03-21 CN CN201910217740.3A patent/CN109768461A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5278852A (en) * | 1990-10-11 | 1994-01-11 | Kigre, Inc. | Intra-cavity high order harmonic laser |
| CN102593366A (en) * | 2003-12-15 | 2012-07-18 | 株式会社半导体能源研究所 | Light-emitting device and electronic devices |
| CN101764348A (en) * | 2010-01-07 | 2010-06-30 | 武汉华工激光工程有限责任公司 | Semiconductor pump ultraviolet laser |
| CN107658687A (en) * | 2016-07-25 | 2018-02-02 | 中国科学院物理研究所 | The self-starting femtosecond titanium precious stone laser oscillator of synchronous pump |
| CN209675667U (en) * | 2019-03-21 | 2019-11-22 | 广州安特激光技术有限公司 | A kind of 1064nm laser |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117277038A (en) * | 2023-11-21 | 2023-12-22 | 武汉光谷航天三江激光产业技术研究院有限公司 | Single-end pumping airborne pulse laser based on double-crystal serial connection and control method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2020207434A1 (en) | Laser and laser radar | |
| CN102244346B (en) | End-pumped laser utilizing half-wave plates | |
| CN209675667U (en) | A kind of 1064nm laser | |
| CN109768461A (en) | A kind of 1064nm laser | |
| CN106654842B (en) | Laser and frequency doubling module thereof | |
| EP0907995B1 (en) | Laser and eyesafe laser transmitter | |
| CN102891431A (en) | Solid laser oscillator capable of outputting annular laser distribution | |
| CN106025783A (en) | Q-switched pulse laser for quickly switching polarization states | |
| CN111900606A (en) | High-power high-energy yellow Raman laser system | |
| CN202695966U (en) | Double-end-pumped intracavity sum-frequency 355nm-wavelength ultraviolet solid-state laser | |
| JP2000012935A (en) | Laser exciting device | |
| CN109768462A (en) | A kind of 532nm and association bundle laser | |
| CN112086848B (en) | High-power intracavity pump terahertz wave parametric oscillator for outputting uniform divergence angle round light spots | |
| KR100525423B1 (en) | Diode-Pumped Solid-State laser | |
| CN109807474A (en) | A kind of hard brittle material laser precision machining equipment | |
| CN109167236B (en) | Three-dimensional terahertz wave parametric oscillator | |
| US5230004A (en) | Narrow beam oscillator and large volume amplifier utilizing same gain medium | |
| CN208508230U (en) | A kind of end face uniform pumping solid state laser | |
| CN113555761A (en) | 266nm pulse solid laser | |
| CN207442180U (en) | A kind of single pump ultraviolet laser | |
| CN212462335U (en) | Special ultraviolet laser for diamond cutting | |
| US6466603B1 (en) | Low loss resonator | |
| CN211238804U (en) | Novel laser structure | |
| CN212462336U (en) | Dedicated green laser of diamond cutting | |
| CN220401096U (en) | High-power single-frequency intracavity five-time frequency laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |