CN109768179A - A kind of organic electroluminescence device of simulated solar irradiation - Google Patents
A kind of organic electroluminescence device of simulated solar irradiation Download PDFInfo
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- CN109768179A CN109768179A CN201910074435.3A CN201910074435A CN109768179A CN 109768179 A CN109768179 A CN 109768179A CN 201910074435 A CN201910074435 A CN 201910074435A CN 109768179 A CN109768179 A CN 109768179A
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- organic electroluminescence
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Abstract
A kind of organic electroluminescence device of simulated solar irradiation provided by the invention, including sequentially connected substrate, anode, hole injection layer, hole transmission layer, doping luminescent layer, electron transfer layer, electron injecting layer and cathode.The doping luminescent layer is made of main body and complementary light object；The main body of the doping luminescent layer is blue fluorescent material.Preparation method the present invention also provides the device includes: to prepare anode, hole injection layer, hole transmission layer, doping luminescent layer, electron transfer layer, electron injecting layer and cathode respectively with sputtering method on substrate.The present invention provides organic electroluminescence device of a kind of simulated solar irradiation and preparation method thereof, it is big to solve device preparation difficulty existing in the prior art, the not high technological deficiency of colour rendering index.
Description
Technical field
The present invention relates to electroluminescent device technical field more particularly to a kind of organic electroluminescences of simulated solar irradiation
Part.
Background technique
White light OLED (Organic Light Emitting Diode) belongs to plane luminescence device, has ultra-thin, shape
Selectance is big, be suitable as large area light emitting light source, without heat dissipation, the processing is simple the advantages that, it is considered to be it is next-generation ideal
Lighting source.Meanwhile white light OLED can also substitute common LED light source, it is real as the backlight of modern mainstream liquid crystal display
Existing ultra-thin liquid crystal display.White light OLED can be combined with color filter film and realize that color OLED is shown.And white light OLED may be used also
To be prepared into flexible device, human lives are preferably served.Therefore white light OLED is by more and more academias and industry
Concern.
In addition, for the ease of distinguishing different white lights, using opposite colour temperature (Correlated Color
Temperature, CCT) indicate photochromic relatively white degree.CCT is to refer to a light source and certain temperature for black matrix
Under black matrix have same color when, the absolute temperature of this black matrix is then the colour temperature of the light source.Wherein, the CCT of sunlight exists
Change within the scope of 2500K-8000K, such as: colour temperature at sunrise is 3250K or so, and acronical colour temperature is 2500K or so, in
The colour temperature of the period of the day from 11 a.m. to 1 p.m is 5500K or so, and is 8000K or so in the colour temperature of high latitude area noon.
In the evolutionary history of the mankind, in order to preferably survive, the mankind create many light sources, for example, torch, candle,
Incandescent lamp, sodium vapor lamp, mercury lamp, fluorescent lamp, LED etc..But these artificial light sources can only meet the primary demand of the mankind, because by
The CCT variation range of its relative narrowness is limited, these artificial light sources do not have the CCT characteristic of sunlight.For example, incandescent lamp
CCT in 2700K or so, the CCT of cold fluorescent lamp changes in 4000~5000K or so.From the health of the mankind, Happiness Index and
The angle of fertility is set out, and the photochromic needs that light source is issued meet sunlight CCT well.But the CCT of the sun is at any time
Variation, change within the scope of 2500~8000K, so it is similar with sunlight so that light source is shown, larger
The CCT characteristic that can be changed in range is extremely important.
The above problem was resolved in 2009, and researcher's discovery, OLED can have sunlight CCT characteristic.2009,
For the first OLED device with sunlight CCT characteristic by the Zhou Zhuohui professor of Taiwan Tsinghua University et al. preparation, the CCT of device can
With 2300~8200K variation (Appl.Phys.Lett.2009,
95,013307).2015, the congruent people of Liu one hundred of South China Science & Engineering University had aggregation-induced emission special by introducing
The blue fluorescent material of property, prepares the OLED with sunlight CCT characteristic, the CCT of the OLED device can 2328~
10690K changes (Adv.Funct.Mater.2015, DOI:10.1002/adfm.201503368).
However, reported despite the OLED with sunlight CCT characteristic, but its quantity still cans be counted on one's fingers, and this
Class device needs to be prepared using three colors mostly, and the doping in device shines at least two layers or more of number of layers, this is without increasing
The preparation difficulty of device is added, furthermore the colour rendering index of device is all high not enough.Therefore, the electroluminescent hair of existing simulated solar irradiation
The preparation of device present in optical device difficulty is big, and the not high those skilled in the art's technology urgently to be resolved that becomes of colour rendering index is asked
Topic.
Summary of the invention
The present invention provides organic electroluminescence devices of a kind of simulated solar irradiation and preparation method thereof, solve existing skill
The preparation of device present in art difficulty is big, the not high technological deficiency of colour rendering index.
The present invention provides a kind of organic electroluminescence device of simulated solar irradiation, including sequentially connected substrate, anode,
Adulterate luminescent layer and cathode；
The doping luminescent layer is made of main body and complementary light object；
The main body of the doping luminescent layer is blue fluorescent material.
Preferably, the photoluminescence quantum efficiencies of the Blue-light emitting host material are greater than 50% and are less than or equal to 100%
Preferably, the complementary colours object is delayed fluorescence material.
Delayed fluorescence material is extremely concerned since the invention in 2012, because it can capture singlet exciton, can also capture
Obtain triplet excitons；Compared with phosphor material, production cost can be substantially reduced；
Preferably, the complementary colours object concentration is greater than or equal to 2% and less than 100%
It preferably, further include electron transfer layer and hole transmission layer；Three lines of the electron transfer layer and hole transmission layer
State energy level is all larger than the triplet of blue material of main part in doping luminescent layer.
It shines it should be noted that the triplet of the electron transfer layer and hole transmission layer is set greater than doping
The triplet of blue material of main part can guarantee the utilization of exciton in layer
Preferably, the electron transfer layer and hole transmission layer are blue fluorescent material.To further guarantee high color
The generation of temperature and high CRI
Preferably, it is described doping luminescent layer with a thickness of 0.1-300nm.
Preferably, it is described doping luminescent layer with a thickness of 0.1-50nm.
The present invention also provides a kind of preparation methods of the organic electroluminescence device of simulated solar irradiation, including following step
It is rapid:
Step 1: anode being prepared with sputtering method on substrate；
Step 2: HAT-CN being prepared as hole injection layer using vacuum deposition method on anode again；
Step 3: TAPC film being prepared as hole transmission layer using vacuum deposition method on the hole injection layer；
Step 4: 4P-NPD:TXO-TPA film being prepared as doping using vacuum deposition method on the hole injection layer
Luminescent layer；
Step 5: Bepp being prepared with vacuum deposition method on the doping luminescent layer2Film is as electron transfer layer；
Step 6: being prepared on the electron transport layer with vacuum deposition method: Cs2CO3Film is as electron injecting layer；
Step 7: Al film being prepared as cathode using vacuum deposition method on the electron injecting layer.
Preferably, it is described doping luminescent layer with a thickness of 20nm.
A kind of organic electroluminescence device of simulated solar irradiation provided in an embodiment of the present invention has the CCT of sunlight special
Property, and there is simple process, the number of layers that shines is few, the advantages of high color rendering index (CRI).The organic electroluminescence hair of preparation of the embodiment of the present invention
Optical device very effective can generate sunlight and the CRI of device can be up to 91.And the preparation process of device A
In, it is not related to the use of any doping techniques, has the advantages that simple process, at low cost.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention without any creative labor, may be used also for those of ordinary skill in the art
To obtain other attached drawings according to these attached drawings.
Fig. 1 is a kind of structural schematic diagram of the organic electroluminescence device of simulated solar irradiation provided in an embodiment of the present invention；
Fig. 2 is spectrum character diagram of the organic electroluminescence device A under low-light level in the embodiment of the present invention 1；
Fig. 3 is spectrum character diagram of the organic electroluminescence device A under brightness of illumination in the embodiment of the present invention 1；
Fig. 4 is the spectrum character diagram of organic electroluminescence device A under high illumination in the embodiment of the present invention 1；
Specific embodiment
The embodiment of the invention provides organic electroluminescence devices of a kind of simulated solar irradiation and preparation method thereof, solve
Device preparation difficulty existing in the prior art is big, the not high technological deficiency of colour rendering index.
In order to make the invention's purpose, features and advantages of the invention more obvious and easy to understand, below in conjunction with the present invention
Attached drawing in embodiment, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that disclosed below
Embodiment be only a part of the embodiment of the present invention, and not all embodiment.Based on the embodiments of the present invention, this field
Those of ordinary skill's all other embodiment obtained without making creative work, belongs to protection of the present invention
Range.
Embodiment 1
Referring to Fig. 1, the embodiment of the invention provides a kind of organic electroluminescence device A of simulated solar irradiation, device A
Structure are as follows: ITO/HAT-CN (100nm)/TAPC (20nm)/4P-NPD:TXO-TPA (6%, 20nm)/Bepp2(40nm)/
Cs2CO3(1nm)/Al(150nm)
The structure of device A is successively superimposed by following functions layer:
Substrate, anode, hole injection layer, hole transmission layer, doping luminescent layer, electron transfer layer, electron injecting layer, yin
Pole.
Aforesaid substrate is glass.
Above-mentioned anode is ito thin film.
Above-mentioned hole injection layer is the HAT-CN film of 100nm thickness.
Above-mentioned hole transmission layer is the TAPC film of 20nm.
Above-mentioned doping luminescent layer is the 4P-NPD:TXO-TPA film of 20nm thickness.
Above-mentioned electron transfer layer is the Bepp of 40nm thickness2Film.
Above-mentioned electron injecting layer is the Cs of 1nm thickness2CO3Film.
Above-mentioned cathode is the Al film of 150nm thickness.
The organic electroluminescence device A of the simulated solar irradiation is prepared by the following method:
1, ito thin film is prepared as anode using sputtering method on substrate.
2, the HAT-CN of 100nm is prepared as hole injection layer using vacuum deposition method on anode again.
3, the TAPC film of 20nm thickness is prepared as hole transport using vacuum deposition method on above-mentioned hole injection layer
Layer.
4, made on above-mentioned hole injection layer with the 4P-NPD:TXO-TPA film that vacuum deposition method prepares 20nm thickness
To adulterate luminescent layer.
5, the Bepp of 40nm thickness is prepared with vacuum deposition method on above-mentioned doping luminescent layer2Film is as electron-transport
Layer.
6, the Cs of 1nm is prepared with vacuum deposition method on above-mentioned electron transfer layer2CO3Film is as electron injecting layer.
7, the Al film of 150nm is prepared as cathode using vacuum deposition method on above-mentioned electron injecting layer.
The performance of the above-mentioned device A being prepared is detected, the spectrum character diagram of device A is as shown in figs 2-4.
At different brightnesses, the colour temperature of device A can 2490~8009K it is a wide range of in be changed, effectively cover too
The colour temperature (2500K-8000K) of sunlight illustrates that organic electroluminescence device A being capable of very effective generation sunlight and device
The CRI of part can be up to 91.And in the preparation process of device A, it is not related to the use of any doping techniques, there is technique letter
Just, advantage at low cost.
The above, the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although referring to before
Stating embodiment, invention is explained in detail, those skilled in the art should understand that: it still can be to preceding
Technical solution documented by each embodiment is stated to modify or equivalent replacement of some of the technical features；And these
It modifies or replaces, the spirit and scope for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution.
Claims (10)
1. a kind of organic electroluminescence device of simulated solar irradiation, which is characterized in that including sequentially connected substrate, anode, sky
Cave implanted layer, hole transmission layer, doping luminescent layer, electron transfer layer, electron injecting layer and cathode.
The doping luminescent layer is made of main body and complementary light object；
The main body of the doping luminescent layer is blue fluorescent material.
2. a kind of organic electroluminescence device of simulated solar irradiation according to claim 1, which is characterized in that the blue light
The photoluminescence quantum efficiencies of material of main part are greater than 50% and are less than or equal to 100%.
3. a kind of organic electroluminescence device of simulated solar irradiation according to claim 1, which is characterized in that the complementation
Color object is delayed fluorescence material.
4. a kind of organic electroluminescence device of simulated solar irradiation according to claim 1, which is characterized in that the complementation
Color object concentration is greater than or equal to 2% and less than 100%.
5. a kind of organic electroluminescence device of simulated solar irradiation according to claim 1, which is characterized in that further include electricity
Sub- transport layer and hole transmission layer；The triplet of the electron transfer layer and hole transmission layer is all larger than in doping luminescent layer
The triplet of blue material of main part.
6. a kind of organic electroluminescence device of simulated solar irradiation according to claim 5, which is characterized in that the electronics
Transport layer and hole transmission layer are blue fluorescent material.
7. a kind of organic electroluminescence device of simulated solar irradiation according to claim 1, which is characterized in that the doping
Luminescent layer with a thickness of 0.1-300nm.
8. a kind of organic electroluminescence device of simulated solar irradiation according to claim 7, which is characterized in that the doping
Luminescent layer with a thickness of 0.1-50nm.
9. a kind of preparation method of the organic electroluminescence device of simulated solar irradiation, which comprises the following steps:
Step 1: anode being prepared with sputtering method on substrate；
Step 2: HAT-CN being prepared as hole injection layer using vacuum deposition method on anode again；
Step 3: TAPC film being prepared as hole transmission layer using vacuum deposition method on the hole injection layer；
Step 4: 4P-NPD:TXO-TPA film being prepared as doping using vacuum deposition method on the hole injection layer and is shone
Layer；
Step 5: Bepp being prepared with vacuum deposition method on the doping luminescent layer2Film is as electron transfer layer；
Step 6: being prepared on the electron transport layer with vacuum deposition method: Cs2CO3Film is as electron injecting layer；
Step 7: Al film being prepared as cathode using vacuum deposition method on the electron injecting layer.
10. a kind of preparation method of the organic electroluminescence device of simulated solar irradiation according to claim 9, feature exist
In, it is described doping luminescent layer with a thickness of 20nm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854279A (en) * | 2019-10-22 | 2020-02-28 | 深圳市华星光电技术有限公司 | OLED display panel and display device |
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| CN105449109A (en) * | 2015-12-28 | 2016-03-30 | 工业和信息化部电子第五研究所 | Organic electroluminescence device capable of simulating sunlight and preparation method thereof |
| CN105449108A (en) * | 2015-12-03 | 2016-03-30 | 工业和信息化部电子第五研究所 | Hybrid white-light organic electroluminescence device and preparation method thereof |
| CN106992256A (en) * | 2017-04-24 | 2017-07-28 | 广东工业大学 | A kind of white color organic electroluminescence device |
| CN107123749A (en) * | 2017-04-01 | 2017-09-01 | 中山大学 | A kind of high color rendering index (CRI) white light organic electroluminescent device and preparation method thereof |
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2019
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105449108A (en) * | 2015-12-03 | 2016-03-30 | 工业和信息化部电子第五研究所 | Hybrid white-light organic electroluminescence device and preparation method thereof |
| CN105449109A (en) * | 2015-12-28 | 2016-03-30 | 工业和信息化部电子第五研究所 | Organic electroluminescence device capable of simulating sunlight and preparation method thereof |
| CN107123749A (en) * | 2017-04-01 | 2017-09-01 | 中山大学 | A kind of high color rendering index (CRI) white light organic electroluminescent device and preparation method thereof |
| CN106992256A (en) * | 2017-04-24 | 2017-07-28 | 广东工业大学 | A kind of white color organic electroluminescence device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854279A (en) * | 2019-10-22 | 2020-02-28 | 深圳市华星光电技术有限公司 | OLED display panel and display device |
| WO2021077486A1 (en) * | 2019-10-22 | 2021-04-29 | Tcl华星光电技术有限公司 | Oled display panel and display device |
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Application publication date: 20190517 |