CN105206754A - Color-temperature-adjustable high-color-rendering-index WOLED device and adjusting principle thereof - Google Patents
Color-temperature-adjustable high-color-rendering-index WOLED device and adjusting principle thereof Download PDFInfo
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- CN105206754A CN105206754A CN201510634893.XA CN201510634893A CN105206754A CN 105206754 A CN105206754 A CN 105206754A CN 201510634893 A CN201510634893 A CN 201510634893A CN 105206754 A CN105206754 A CN 105206754A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
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- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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Abstract
The invention discloses a color-temperature-adjustable high-color-rendering-index WOLED device and an adjusting principle thereof and relates to the technical field of organic light emitting diode devices. An ITO anode is arranged on the upper layer of a substrate, a hole injection layer is arranged on the upper layer of the ITO anode, a hole transmission layer is arranged on the upper layer of the hole injection layer, a phosphorescence light-emitting layer is arranged on the upper layer of the hole transmission layer, a partition layer is arranged on the upper layer of the phosphorescence light-emitting layer, a fluorescent light-emitting layer is arranged on the upper layer of the partition layer, an electronic transmission layer is arranged on the upper layer of the fluorescent light-emitting layer, an electronic injection layer is arranged on the upper layer of the electronic transmission layer, and a cathode is arranged on the upper layer of the electronic injection layer. The color-temperature-adjustable high-color-rendering-index WOLED device and the adjusting principle thereof have the advantages of being simple in process, high in repeatability, high in color rendering index and adjustable in color temperature and can be applied to the solid lighting field of industries with a high requirement on the color rendering index, such as operating rooms, photography, exhibition and printing.
Description
technical field:
The present invention relates to high color rendering index (CRI) WOLED device and the Principles of Regulation thereof of adjustable color, belong to organic light emitting diode device technical field.
background technology:
Organic Light Emitting Diode (OrganicLightEmittingDiodes, OLEDs), because it is showing the huge applications in field and illumination, receives in recent years and paying close attention to widely.Wherein White OLED can be applied to full color display, and uses as the backlight of liquid crystal display, and the organic electroluminescent white light device of high brightness can replace common incandescent lamp as lighting source.
Due to the huge advantage of the relative LED of OLED, OLED illumination is considered to following emerging lighting technology, and in the whole world under the environmental protection of illumination Product Green, energy-efficient requirement, OLED lighting technology becomes the most attracting new technique at present.The brightness that white light OLED emits white light, equilibrium degree and efficiency are all higher than the white light that fluorescent lamp sends, possesses again the very color characteristic of incandescent lighting simultaneously, if so OLED is made large area flake, then can replace the fluorescent lamp of current family and building use, therefore use OLED to be expected to reduce the energy consumption needed for illumination in the future.And OLED is planar light source, be different from the LED of point-source of light, its luminescence is soft, and easily realize flexibility, slimming, material source extensively, unique advantage and the feature such as preparation technology is relatively simple, make it have broad application prospects in following lighting field, and have an opportunity to become the mainstream technology of indoor solid-state illumination of new generation.
And for solid-state illumination, color rendering index and colour temperature are extremely important parameters, important function can be produced to the physiology of people and psychology.Color rendering index refers to that light source to be measured is compared with the reference light source of standard, the effect that light source to be measured produces object color appearance, the degree that namely color is true to nature.Color rendering index is higher shows that object color is more close to object true colors under this light source.
Colour temperature refer to the color of source emissioning light and black matrix at a certain temperature radiant light form and aspect simultaneously, the temperature of black matrix is called the colour temperature of this light source.Colour temperature weighs the photochromic index of light source, and expression that colour temperature is on the low side is photochromic partially warm, higher, represents photochromic colder.In general, the light source of low colour temperature can give warm, healthy, comfortable impression, is applicable to family, house, dormitory, hotels and other places or temperature lower ground side.
The advantage of current existing LED in energy-conservation, colour temperature etc. is well below Organic Light Emitting Diode.
summary of the invention:
For the problems referred to above, the technical problem to be solved in the present invention is to provide high color rendering index (CRI) WOLED device and the Principles of Regulation thereof of adjustable color.
The high color rendering index (CRI) WOLED device of adjustable color of the present invention and Principles of Regulation thereof, it comprises substrate, ito anode, hole injection layer, hole transmission layer, phosphorescence luminescent layer, wall, fluorescent light-emitting layer, electron transfer layer, electron injecting layer and negative electrode; Ito anode is arranged on the upper strata of substrate, hole injection layer is arranged on the upper strata of ito anode, hole transmission layer is arranged on the upper strata of hole injection layer, phosphorescence luminescent layer is arranged on the upper strata of hole transmission layer, wall is arranged on the upper strata of phosphorescence luminescent layer, and fluorescent light-emitting layer is arranged on the upper strata of wall, and electron transfer layer is arranged on the upper strata of fluorescent light-emitting layer, electron injecting layer is arranged on the upper strata of electron transfer layer, and negative electrode is arranged on the upper strata of electron injecting layer.
As preferably, Principles of Regulation of the present invention are: blue light-emitting is entrained in material of main part Bepp blue light emitting material BCzVBi
2in, eliminate general fluorescent device to the marked change caused by doping content minor variations, utilize green glow phosphor material Ir (ppy)
2(acac) with ruddiness phosphor material Ir (piq)
2(acac) energy transferring between and exciton are caught, and it is to the special transmission performance of injected electrons, make it possible to by regulating green glow phosphor material Ir (ppy)
2(acac) in the concentration adjustment colour temperature of red light luminescent layer.
As preferably, described hole transmission layer comprises basis material, Red dopants, yellow dopant, green dopant.
As preferably, described electron transfer layer comprises basis material, blue dopant.
As preferably, described phosphorescence luminescent layer comprises red light luminescent layer, Yellow light emitting layer and green light emitting layer; Yellow light emitting layer is arranged on the upper strata of red light luminescent layer, and green light emitting layer is arranged on the upper strata of Yellow light emitting layer, and red light luminescent layer is red emitting material Ir (piq)
2(acac) be doped in material of main part CBP; Yellow light emitting layer is Yellow light emitting material Ir (DMP)
3be doped in material of main part CBP; Green light emitting layer is green light luminescent material Ir (ppy)
2(acac) be doped in material of main part CBP.
As preferably, described substrate is the substrate of glass that light transmission is good.
As preferably, described hole injection layer is MoO
3the hole injection layer of material.
As preferably, described hole transmission layer is the hole transmission layer of CBP material.
As preferably, described wall is the wall of CBP material.
As preferably, the material of main part Bepp of described fluorescent light-emitting layer
2, and material of main part Bepp
2in mix and have blue light emitting material BCzVBi.
Beneficial effect of the present invention is: the features such as its technique is simple, repeatable high, high color rendering index (CRI) and adjustable color, can require that to color rendering index the solid-state illumination field of the industries such as higher operating room, photography, exhibition and printing is applied.
accompanying drawing illustrates:
For ease of illustrating, the present invention is described in detail by following concrete enforcement and accompanying drawing.
Fig. 1 is structural representation of the present invention,
Fig. 2 is luminescent material Ir (piq) in the present invention
2(acac), Ir (DMP)
3, Ir (ppy)
2(acac) the current density voltage curve figure of single charge carrier device of material of main part CBP and CBP is entrained in,
Fig. 3 is that the white light OLED device of the embodiment of the present invention 2 is at 5000cd/m
2brightness under electroluminescent spectrum figure,
Fig. 4 is that the white light OLED device of the embodiment of the present invention 2 is at 5000cd/m
2brightness under colour temperature with the variation diagram of doping content.
In figure: 1-substrate; 2-ITO anode; 3-hole injection layer; 4-hole transmission layer; 5-phosphorescence luminescent layer; 6-wall; 7-fluorescent light-emitting layer; 8-electron transfer layer; 9-electron injecting layer; 10-negative electrode; 51-red light luminescent layer; 52-Yellow light emitting layer; 53-green light emitting layer.
embodiment:
For making the object, technical solutions and advantages of the present invention clearly understand, below by the specific embodiment shown in accompanying drawing, the present invention is described.But should be appreciated that, these describe just exemplary, and do not really want to limit the scope of the invention.In addition, in the following description, the description to known features and technology is eliminated, to avoid unnecessarily obscuring concept of the present invention.
As shown in Figure 1, this embodiment by the following technical solutions: it comprises substrate 1, ito anode 2, hole injection layer 3, hole transmission layer 4, phosphorescence luminescent layer 5, wall 6, fluorescent light-emitting layer 7, electron transfer layer 8, electron injecting layer 9 and negative electrode 10; Ito anode 2 is arranged on the upper strata of substrate 1, hole injection layer 3 is arranged on the upper strata of ito anode 2, hole transmission layer 4 is arranged on the upper strata of hole injection layer 3, phosphorescence luminescent layer 5 is arranged on the upper strata of hole transmission layer 4, wall 6 is arranged on the upper strata of phosphorescence luminescent layer 5, and fluorescent light-emitting layer 7 is arranged on the upper strata of wall 6, and electron transfer layer 8 is arranged on the upper strata of fluorescent light-emitting layer 7, electron injecting layer 9 is arranged on the upper strata of electron transfer layer 8, and negative electrode 10 is arranged on the upper strata of electron injecting layer 9.
Further, Principles of Regulation of the present invention are: blue light-emitting is entrained in material of main part Bepp blue light emitting material BCzVBi
2in, eliminate general fluorescent device to the marked change caused by doping content minor variations, utilize green glow phosphor material Ir (ppy)
2(acac) with ruddiness phosphor material Ir (piq)
2(acac) energy transferring between and exciton are caught, and it is to the special transmission performance of injected electrons, make it possible to by regulating green glow phosphor material Ir (ppy)
2(acac) in the concentration adjustment colour temperature of red light luminescent layer.
Further, described hole transmission layer 4 comprises basis material, Red dopants, yellow dopant, green dopant.
Further, described electron transfer layer 8 comprises basis material, blue dopant.
Further, as shown in Figure 2, described phosphorescence luminescent layer 5 comprises red light luminescent layer 51, Yellow light emitting layer 52 and green light emitting layer 53; Yellow light emitting layer 52 is arranged on the upper strata of red light luminescent layer 51, and green light emitting layer 53 is arranged on the upper strata of Yellow light emitting layer 52, and red light luminescent layer 51 is red emitting material Ir (piq)
2(acac) be doped in material of main part CBP; Yellow light emitting layer 52 is Yellow light emitting material Ir (DMP)
3be doped in material of main part CBP; Green light emitting layer 53 is green light luminescent material Ir (ppy)
2(acac) be doped in material of main part CBP.
Further, described substrate 1 is the substrate of glass that light transmission is good.
Further, described ito anode 2 is for photoetching is at suprabasil tin indium oxide.
Further, described hole injection layer 3 is MoO
3the hole injection layer of material.
Further, described hole transmission layer 4 is the hole transmission layer of CBP material.
Further, described wall 6 is the wall of CBP material.
Further, the material of main part Bepp of described fluorescent light-emitting layer 7
2, and material of main part Bepp
2in mix and have blue light emitting material BCzVBi.
Further, described electron transfer layer 8 is Bepp
2material electron transfer layer.
Further, described electron injecting layer 9 is LiF material electron injecting layer.
Further, described negative electrode 10 is metallic aluminium negative electrode.
In this embodiment, Fig. 2 is luminescent material Ir (piq)
2(acac), Ir (DMP)
3, Ir (ppy)
2(acac) the current density voltage curve figure of single charge carrier device of material of main part CBP and CBP is entrained in, as we know from the figure, green glow phosphor material Ir (ppy)
2(acac) have special performance, can promote the transmission of electronics in material of main part CBP, this has important effect to regulating the colour temperature of white light parts.
This embodiment can by regulating green glow phosphor material Ir (ppy)
2(acac) in the concentration adjustment colour temperature of red light luminescent layer, adjustable color is to 2500K; Due to green glow phosphor material Ir (ppy)
2(acac) with ruddiness phosphor material Ir (piq)
2(acac) energy transferring between and exciton are caught, and it is to the special transmission performance of injected electrons, make it possible to by regulating green glow phosphor material Ir (ppy)
2(acac) in the concentration adjustment colour temperature of red light luminescent layer, and the minor variations of chromaticity coordinates and color rendering index is only caused.
Embodiment 1
The present embodiment comprises substrate 1, ito anode 2, hole injection layer 3, hole transmission layer 4, phosphorescence luminescent layer 5, wall 6, fluorescent light-emitting layer 7, electron transfer layer 8, electron injecting layer 9 and negative electrode 10; Ito anode 2 is arranged on the upper strata of substrate 1, hole injection layer 3 is arranged on the upper strata of ito anode 2, hole transmission layer 4 is arranged on the upper strata of hole injection layer 3, phosphorescence luminescent layer 5 is arranged on the upper strata of hole transmission layer 4, wall 6 is arranged on the upper strata of phosphorescence luminescent layer 5, and fluorescent light-emitting layer 7 is arranged on the upper strata of wall 6, and electron transfer layer 8 is arranged on the upper strata of fluorescent light-emitting layer 7, electron injecting layer 9 is arranged on the upper strata of electron transfer layer 8, and negative electrode 10 is arranged on the upper strata of electron injecting layer 9.
Described phosphorescence luminescent layer 5 comprises red light luminescent layer 51, Yellow light emitting layer 52 and green light emitting layer 53; Yellow light emitting layer 52 is arranged on the upper strata of red light luminescent layer 51, and green light emitting layer 53 is arranged on the upper strata of Yellow light emitting layer 52, and red light luminescent layer 51 is red emitting material Ir (piq)
2(acac) be doped in material of main part CBP; Yellow light emitting layer 52 is Yellow light emitting material Ir (DMP)
3be doped in material of main part CBP; Green light emitting layer 53 is green light luminescent material Ir (ppy)
2(acac) be doped in material of main part CBP.
Described substrate 1 is the substrate of glass that light transmission is good.
Described ito anode 2 is for photoetching is at suprabasil tin indium oxide.
Described hole injection layer 3 is MoO
3the hole injection layer of material.
Described hole transmission layer 4 is the hole transmission layer of CBP material.
Described wall 6 is the wall of CBP material.
The material of main part Bepp of described fluorescent light-emitting layer 7
2, and material of main part Bepp
2in mix and have blue light emitting material BCzVBi.
Described electron transfer layer 8 is Bepp
2material electron transfer layer.
Described electron injecting layer 9 is LiF material electron injecting layer.
Described negative electrode 10 is metallic aluminium negative electrode.
When described wall CBP thickness is 3nm, device efficiency is best, and device efficiency is as shown in table 1 below:
Table 1
As can be seen from the above table, device result meets the demand of practical illumination, particularly requires the industries such as higher operating room, photography, exhibition and printing to color rendering index.
Embodiment 2
The present embodiment comprises substrate 1, ito anode 2, hole injection layer 3, hole transmission layer 4, phosphorescence luminescent layer 5, wall 6, fluorescent light-emitting layer 7, electron transfer layer 8, electron injecting layer 9 and negative electrode 10; Ito anode 2 is arranged on the upper strata of substrate 1, hole injection layer 3 is arranged on the upper strata of ito anode 2, hole transmission layer 4 is arranged on the upper strata of hole injection layer 3, phosphorescence luminescent layer 5 is arranged on the upper strata of hole transmission layer 4, wall 6 is arranged on the upper strata of phosphorescence luminescent layer 5, and fluorescent light-emitting layer 7 is arranged on the upper strata of wall 6, and electron transfer layer 8 is arranged on the upper strata of fluorescent light-emitting layer 7, electron injecting layer 9 is arranged on the upper strata of electron transfer layer 8, and negative electrode 10 is arranged on the upper strata of electron injecting layer 9.
Described phosphorescence luminescent layer 5 comprises red light luminescent layer 51, Yellow light emitting layer 52 and green light emitting layer 53; Yellow light emitting layer 52 is arranged on the upper strata of red light luminescent layer 51, and green light emitting layer 53 is arranged on the upper strata of Yellow light emitting layer 52, and red light luminescent layer 51 is red emitting material Ir (piq)
2(acac) be doped in material of main part CBP; Yellow light emitting layer 52 is Yellow light emitting material Ir (DMP)
3be doped in material of main part CBP; Green light emitting layer 53 is green light luminescent material Ir (ppy)
2(acac) be doped in material of main part CBP.
Described substrate 1 is the substrate of glass that light transmission is good.
Described ito anode 2 is for photoetching is at suprabasil tin indium oxide.
Described hole injection layer 3 is MoO
3the hole injection layer of material.
Described hole transmission layer 4 is the hole transmission layer of CBP material.
Described wall 6 is the wall of CBP material.
The material of main part Bepp of described fluorescent light-emitting layer 7
2, and material of main part Bepp
2in mix and have blue light emitting material BCzVBi.
Described electron transfer layer 8 is Bepp
2material electron transfer layer.
Described electron injecting layer 9 is LiF material electron injecting layer.
Described negative electrode 10 is metallic aluminium negative electrode.
Red emitting material Ir (piq) in described red light luminescent layer 51
2(acac) doping content is 3wt.%, green light luminescent material Ir (ppy)
2(acac), when doping content is respectively 0wt.%, 3wt.%, 6wt.%, 10wt.%, device efficiency is as shown in table 2 below:
Table 2
As seen from the above table, the colour temperature of device increases with doping content and reduces, and chromaticity coordinates and the color rendering index of device only minor variations occur.
In the present embodiment, Fig. 3 is for the white light OLED of the present embodiment described in table 2 is at 5000cd/m
2brightness under electroluminescent spectrum figure.As we know from the figure along with the increase of doping content, the relative luminous intensity of ruddiness increases, and then causes the colour temperature of device to reduce.Obviously this is due to material Ir (ppy)
2(acac) there is the characteristic promoting electric transmission, more exciton is formed and is trapped in red light luminescent layer;
Fig. 4 be the white light OLED device of the present embodiment under the brightness of 5000cd/m2 colour temperature with the variation diagram of doping content.
More than show and describe general principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; what describe in above-described embodiment and specification just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.Application claims protection range is defined by appending claims and equivalent thereof
.
Claims (10)
1. the high color rendering index (CRI) WOLED device of adjustable color and Principles of Regulation thereof, is characterized in that: it comprises substrate (1), ito anode (2), hole injection layer (3), hole transmission layer (4), phosphorescence luminescent layer (5), wall (6), fluorescent light-emitting layer (7), electron transfer layer (8), electron injecting layer (9) and negative electrode (10), ito anode (2) is arranged on the upper strata of substrate (1), hole injection layer (3) is arranged on the upper strata of ito anode (2), hole transmission layer (4) is arranged on the upper strata of hole injection layer (3), phosphorescence luminescent layer (5) is arranged on the upper strata of hole transmission layer (4), wall (6) is arranged on the upper strata of phosphorescence luminescent layer (5), fluorescent light-emitting layer (7) is arranged on the upper strata of wall (6), electron transfer layer (8) is arranged on the upper strata of fluorescent light-emitting layer (7), electron injecting layer (9) is arranged on the upper strata of electron transfer layer (8), negative electrode (10) is arranged on the upper strata of electron injecting layer (9).
2. the high color rendering index (CRI) WOLED device of adjustable color according to claim 1 and Principles of Regulation thereof, is characterized in that: its Principles of Regulation are: blue light-emitting is entrained in material of main part Bepp blue light emitting material BCzVBi
2in, eliminate general fluorescent device to the marked change caused by doping content minor variations, utilize green glow phosphor material Ir (ppy)
2(acac) with ruddiness phosphor material Ir (piq)
2(acac) energy transferring between and exciton are caught, and it is to the special transmission performance of injected electrons, make it possible to by regulating green glow phosphor material Ir (ppy)
2(acac) in the concentration adjustment colour temperature of red light luminescent layer.
3. the high color rendering index (CRI) WOLED device of adjustable color according to claim 1 and Principles of Regulation thereof, is characterized in that: described hole transmission layer (4) comprises basis material, Red dopants, yellow dopant, green dopant.
4. the high color rendering index (CRI) WOLED device of adjustable color according to claim 1 and Principles of Regulation thereof, is characterized in that: described electron transfer layer (8) comprises basis material, blue dopant.
5. the high color rendering index (CRI) WOLED device of adjustable color according to claim 1 and Principles of Regulation thereof, is characterized in that: described phosphorescence luminescent layer (5) comprises red light luminescent layer (51), Yellow light emitting layer (52) and green light emitting layer (53); Yellow light emitting layer (52) is arranged on the upper strata of red light luminescent layer (51), green light emitting layer (53) is arranged on the upper strata of Yellow light emitting layer (52), and red light luminescent layer (51) is red emitting material Ir (piq)
2(acac) be doped in material of main part CBP; Yellow light emitting layer (52) is Yellow light emitting material Ir (DMP)
3be doped in material of main part CBP; Green light emitting layer (53) is green light luminescent material Ir (ppy)
2(acac) be doped in material of main part CBP.
6. the high color rendering index (CRI) WOLED device of adjustable color according to claim 1 and Principles of Regulation thereof, is characterized in that: described substrate (1) is the good substrate of glass of light transmission.
7. the high color rendering index (CRI) WOLED device of adjustable color according to claim 1 and Principles of Regulation thereof, is characterized in that: described hole injection layer (3) is MoO
3the hole injection layer of material.
8. the high color rendering index (CRI) WOLED device of adjustable color according to claim 1 and Principles of Regulation thereof, is characterized in that: the hole transmission layer that described hole transmission layer (4) is CBP material.
9. the high color rendering index (CRI) WOLED device of adjustable color according to claim 1 and Principles of Regulation thereof, is characterized in that: the wall that described wall (6) is CBP material.
10. the high color rendering index (CRI) WOLED device of adjustable color according to claim 1 and Principles of Regulation thereof, is characterized in that: the material of main part Bepp of described fluorescent light-emitting layer (7)
2, and material of main part Bepp
2in mix and have blue light emitting material BCzVBi.
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| CN107452887A (en) * | 2017-08-23 | 2017-12-08 | 太原理工大学 | A kind of fluorescent/phosphorescent mixed white light OLED |
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Application publication date: 20151230 |