CN109756098A - A kind of parallel driver circuit of power semiconductor - Google Patents
A kind of parallel driver circuit of power semiconductor Download PDFInfo
- Publication number
- CN109756098A CN109756098A CN201711064273.2A CN201711064273A CN109756098A CN 109756098 A CN109756098 A CN 109756098A CN 201711064273 A CN201711064273 A CN 201711064273A CN 109756098 A CN109756098 A CN 109756098A
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- unit
- power supply
- power
- driving
- decoupling
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0006—Arrangements for supplying an adequate voltage to the control circuit of converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Abstract
This application discloses a kind of parallel driver circuits of power semiconductor, including the signal isolation that is uniquely connected with PC control signaling interface and drive control unit, the driving isolated power supply unit being uniquely connected with power interface, the N number of signal decoupling unit being connected with signal isolation with drive control unit, the N number of power supply decoupling unit being connected with driving isolated power supply unit, and connected N number of driving unit corresponding with each pair of decoupling unit.The complexity that the parallel driver circuit reduces costs, reduces volume, reducing driving circuit and main circuit, it ensure that the gate voltage amplitude of power semiconductor in parallel and the consistency of timing, to effectively improve the equal flow horizontal of sound state of parallel power semiconductor devices.
Description
Technical field
This application involves power semiconductor actuation techniques field, in particular to a kind of parallel connection of power semiconductor
Driving circuit.
Background technique
In power semiconductor drive area, successively there is the conventional parallel power semiconductor using multiple drivers
The drive control mode of device using single driver but is followed by the drive control modes of multiple adaptation boards, and uses principal and subordinate
The parallel driver circuit of isolation method, this three each have certain defect.
The first, since each driver is provided with isolated power supply and signal isolation circuit, volume is big, at high cost, and by
In the otherness of electronic component the gate voltage of driving is had differences in timing and amplitude, will affect parallel current-sharing effect
Fruit；The second way is then easily interfered under complicated electromagnetic field environment, causes parallel power semiconductor devices sound state
Unevenness stream；The third, is difficult to accomplish pressure stabilizing, point of electronic component in isolated from power unit by the way of principal and subordinate's isolation first
Scattered property will affect parallel power semiconductor devices and move Current for paralleled.Comprehensive existing three kinds of different modes, it is available
Power semiconductor drives this aspect, the defect that stream effect is bad all occurs.
So how to provide, a kind of small volume, cost is relatively low, not good vulnerable to the interference of electromagnetic field, parallel current-sharing effect
Power semiconductor parallel driver circuit is those skilled in the art's urgent problem to be solved.
Summary of the invention
The purpose of the application is to provide a kind of parallel driver circuit of power semiconductor, small volume, cost compared with
It is low, not good vulnerable to the interference of electromagnetic field, parallel current-sharing effect.
In order to solve the above technical problems, the application provides a kind of parallel driver circuit of power semiconductor, including with
The signal isolation that PC control signaling interface is uniquely connected and drive control unit, the driving being uniquely connected with power interface every
From power supply unit, the N number of signal decoupling unit connected with drive control unit with the signal isolation is isolated with the driving
The connected N number of power supply decoupling unit of power supply unit, and connected N number of driving unit corresponding with each pair of decoupling unit；Wherein,
Each pair of decoupling unit specifically includes the signal decoupling unit and a power supply decoupling unit, and the N is not
Positive integer less than 1.
Optionally, the driving isolated power supply unit realizes that the isolation of power is transmitted by transformer；Wherein, the transformation
Device meets the driving power insulation request of each power semiconductor.
Optionally, the signal isolation and drive control unit pass through optical fiber, optocoupler, coreless transformer, capacitive coupling, machine
The isolation transmission of control signal is realized at least one of tool coupling and wireless transmission；Wherein, each isolation transmission mode
It is all satisfied the signal isolation requirement of the power semiconductor.
Optionally, the power supply coupling power is cooperated by least one of inductance, common mode inductance, resistance and capacitor
Realize power supply decoupling.
Optionally, the signal decoupling circuit by optical fiber, optocoupler, coreless transformer, capacitive coupling, mechanical couplings and
Signal decoupling is realized at least one of wireless transmission.
Optionally, the driving unit have drive the power semiconductor ability MOSFET, JFET,
At least one of BJT.
Optionally, the power semiconductor specifically includes at least one of IGBT, MOSFET and IEGT.
A kind of parallel driver circuit of power semiconductor provided herein, including connect with PC control signal
Mouth uniquely connected signal isolation and drive control unit, the driving isolated power supply unit being uniquely connected with power interface, with institute
It states N number of signal decoupling unit that signal isolation is connected with drive control unit, be connected with the driving isolated power supply unit
N number of power supply decoupling unit, and connected N number of driving unit corresponding with each pair of decoupling unit；Wherein, each pair of decoupling is single
Member specifically includes the signal decoupling unit and a power supply decoupling unit, and the N is the positive integer not less than 1.
Obviously, technical solution provided herein, by the isolated from power of parallel power semiconductor devices, signal isolation and
Drive control is realized by same circuit, can reduce cost, reduction volume, the complexity for reducing driving circuit and main circuit；It is N number of
Power semiconductor driving unit in parallel obtains power supply from driving isolated power supply unit by N number of power supply decoupling unit, leads to
It crosses N number of signal decoupling unit and obtains control signal from same signal isolation and drive control unit, it is ensured that power in parallel
The gate voltage amplitude of semiconductor device and the consistency of timing, so that the sound state for effectively improving parallel power semiconductor devices is equal
Flow horizontal.
Detailed description of the invention
In order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of application for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of parallel drive electricity of the power semiconductor using principal and subordinate's isolation method provided by the prior art
The structural block diagram on road；
Fig. 2 is the structural frames of the parallel driver circuit of another kind power semiconductor provided by the embodiment of the present application
Figure.
Specific embodiment
The core of the application is to provide a kind of parallel driver circuit of power semiconductor, small volume, cost compared with
It is low, not good vulnerable to the interference of electromagnetic field, parallel current-sharing effect.
To keep the purposes, technical schemes and advantages of the embodiment of the present application clearer, below in conjunction with the embodiment of the present application
In attached drawing, the technical scheme in the embodiment of the application is clearly and completely described, it is clear that described embodiment is
Some embodiments of the present application, instead of all the embodiments.Based on the embodiment in the application, those of ordinary skill in the art
All other embodiment obtained without making creative work, shall fall in the protection scope of this application.
It is illustrated below in conjunction with Fig. 1 to how being arranged in the prior art, Fig. 1 is a kind of use provided by the prior art
The structural block diagram of the parallel driver circuit of the power semiconductor of principal and subordinate's isolation method.
As shown in Figure 1, the power semiconductor parallel driver circuit is in such a way that principal and subordinate is isolated.
Principal and subordinate is isolated parallel power component driving circuit and specifically includes: having power semiconductor driving isolation all the way and wants
The main power source isolated location and main signal isolated location asked N number of have the slave power isolation circuit for being substantially isolated function, N number of tool
The standby slave signal isolation circuit for being substantially isolated function and N number of driving unit.Main signal isolated location therein and N number of from signal
Isolated location is connected；Main power source isolation circuit is connected with N number of from isolated from power unit；Each driving unit respectively with one from
Signal isolation unit and one are connected from isolated from power unit.
Principal and subordinate's isolation method is wanted to carry out high_voltage isolation by the different insulation request of principal and subordinate's two-stage and be substantially isolated, because
To only have main signal isolated location and main power source isolated location has a driving high_voltage isolation requirement of power semiconductor, and under
Layer slave signal isolation unit and only have basic isolation features from isolated from power unit, it is intended that be isolated by main isolated location
From in upper computer control system control signaling interface and power interface obtain meet power semiconductor driving insulation request
Control signal and power supply, then by the slave signal isolation unit of lower layer and from isolated from power unit with basic isolation
It is able to achieve to each driving unit and sends control signal and power supply, i.e., influenced each other by being not present between principal and subordinate's two-stage, i.e.,
There is no mutual influences between each unit, avoid sound state existing for power semiconductor switching device process according to this
The phenomenon that unevenness stream.
Wherein hiding hidden danger, first, be difficult to export stable power supply from isolated from power unit under which, and to from letter
Number isolated location and the electronic component coherence request from isolated from power unit are higher, and the dispersibility of electronic component will affect
Parallel power semiconductor devices moves Current for paralleled；
Second, due to using two-stage isolation setting, the program each will independent transformer from isolated from power unit
With rectification circuit actual circuit complexity, higher cost.
Below in conjunction with the parallel drive electricity that Fig. 2, Fig. 2 are another kind power semiconductor provided by the embodiment of the present application
The structural block diagram on road.
Associated upper computer control system includes the control signaling interface being uniquely connected with the control signal generated and power supply
The power interface that power supply is uniquely connected；
The parallel driver circuit include the signal isolation that is uniquely connected with the control signaling interface and drive control unit, with
The driving isolated power supply unit that the power interface is uniquely connected, the N number of letter being connected with the signal isolation with drive control unit
Number decoupling unit, the N number of power supply decoupling unit being connected with the driving isolated power supply unit, and it is corresponding with each pair of decoupling unit
Connected N number of driving unit；
Signal isolation and drive control unit are integrated into a signal isolation by parallel driver circuit provided herein
With drive control unit A1, and driving isolated power supply unit an A2, A1 is provided and meets power semiconductor signal isolation and wants
Ask, A2 meets power semiconductor driving power insulation request, being capable of the higher control for issuing upper computer control system
Signal and power supply signal execute isolated operation.And signal decoupling unit, the power supply decoupling unit being arranged by lower layer, it realizes to A1
The power supply signal of the driving control signal and driving isolated power supply that issue with A2 is decoupled.By way of decoupling, Neng Goubao
The supply voltage consistency of slave isolated from power unit in parallel and the temporal consistency from signal isolation unit are demonstrate,proved, to guarantee simultaneously
The power semiconductor of connection moves Current for paralleled.
N number of power semiconductor is corresponding with N number of driving unit to be connected；
Wherein, each pair of decoupling unit specifically includes a signal decoupling unit and a power supply decoupling unit, as Fig. 2 institute
The driving unit A13 being connected with signal decoupling unit A11 and power supply decoupling unit A12 shown, and with signal decoupling unit AN1
The driving unit AN3 being connected with power supply decoupling power supply AN2, wherein N is the positive integer not less than 1, i.e., minimum includes a driving
Unit is responsible for the corresponding power semiconductor of driving.
Wherein, driving isolated power supply unit A2 can realize that the isolation of power is transmitted by transformer, and transformer meets
The driving power insulation request of each power semiconductor, naturally it is also possible to which same purpose is realized using other way；Signal every
It can be by optical fiber, optocoupler, coreless transformer, capacitive coupling, mechanical couplings and wireless transmission from drive control unit
At least one realization control signal isolation transmission, it is each be isolated transmission mode be also all satisfied the signal of power semiconductor every
From requiring.
In the decoupling unit of lower layer, power supply coupling power passes through at least one of inductance, common mode inductance, resistance and capacitor
Power supply decoupling is realized in device cooperation；Signal decoupling circuit by optical fiber, optocoupler, coreless transformer, capacitive coupling, mechanical couplings and
Signal decoupling is realized at least one of wireless transmission.
Meanwhile driving unit has MOSFET (the Metal Oxide of driving power semiconductor devices ability
Semiconductor Field Effect Transistor Metal Oxide Semiconductor Field Effect Transistor), JFET
At least one of (Junction Field-Effect Transistor, junction field effect transistor), BJT；Power is partly led
Body device is specially IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor), MOSFET
And it is any one in IEGT (Injection Enhanced Gate Transistor, electron injection enhancement gate transistor)
Kind.
Based on the above-mentioned technical proposal, the application be different from the prior art principal and subordinate isolation by way of, it is lower using cost,
Actual circuit is simpler, lower signal decoupling unit and power supply decoupling unit is required each unit electronic component to substitute principal and subordinate
Two-stage isolation method, by signal decoupling unit and power supply decoupling unit in parallel in the premise for guaranteeing power supply consistency in parallel
Under, power supply and signal decoupling are realized, to guarantee that power semiconductor in parallel moves Current for paralleled.
The above layout and planning that only power semiconductor parallel driver circuit each unit set-up mode is carried out, because
For situation complexity, it can not enumerate and be illustrated, those skilled in the art should be able to recognize according to provided by the present application basic
Method And Principle combination actual conditions may exist the mode of many actual circuit layouts and identical purpose, and combine each producer
In the case where particular/special requirement, it is more likely that there is biggish difference in appearance, but in the case where not paying enough creative works, answer
Within the scope of protection of this application.
Specific examples are used herein to illustrate the principle and implementation manner of the present application, and above embodiments are said
It is bright to be merely used to help understand the present processes and its core concept.It should be pointed out that for the ordinary skill of the art
For personnel, under the premise of not departing from the application principle, can also to the application, some improvement and modification can also be carried out, these improvement
It is also fallen into the protection scope of the claim of this application with modification.
It should also be noted that, in the present specification, relational terms such as first and second and the like be used merely to by
One entity or operation are distinguished with another entity or operation, without necessarily requiring or implying these entities or operation
Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant meaning
Covering non-exclusive inclusion, so that the process, method, article or equipment for including a series of elements not only includes that
A little elements, but also other elements including being not explicitly listed, or further include for this process, method, article or
The intrinsic element of equipment.In the absence of more restrictions, the element limited by sentence "including a ...", is not arranged
Except there is also other identical elements in the process, method, article or equipment for including element.
Claims (7)
1. a kind of parallel driver circuit of power semiconductor, which is characterized in that including with PC control signaling interface only
One connected signal isolation and drive control unit, the driving isolated power supply unit being uniquely connected with power interface, with the letter
N number of signal decoupling unit that number isolation is connected with drive control unit, be connected with the driving isolated power supply unit it is N number of
Power supply decoupling unit, and connected N number of driving unit corresponding with each pair of decoupling unit；Wherein, each pair of decoupling unit tool
Body includes a signal decoupling unit and a power supply decoupling unit, and the N is the positive integer not less than 1.
2. parallel driver circuit according to claim 1, which is characterized in that the driving isolated power supply unit passes through transformation
Device realizes the isolation transmission of power；Wherein, the driving power isolation that the transformer meets each power semiconductor is wanted
It asks.
3. parallel driver circuit according to claim 2, which is characterized in that the signal isolation and drive control unit are logical
It crosses at least one of optical fiber, optocoupler, coreless transformer, capacitive coupling, mechanical couplings and wireless transmission and realizes control signal
Isolation transmission；Wherein, each isolation transmission mode is all satisfied the signal isolation requirement of the power semiconductor.
4. parallel driver circuit according to claim 3, which is characterized in that the power supply coupling power passes through inductance, is total to
At least one of mould inductance, resistance cooperate with capacitor realizes power supply decoupling.
5. parallel driver circuit according to claim 4, which is characterized in that the signal decoupling circuit passes through optical fiber, light
Signal decoupling is realized at least one of coupling, coreless transformer, capacitive coupling, mechanical couplings and wireless transmission.
6. parallel driver circuit according to claim 5, which is characterized in that the driving unit has driving institute
State at least one of MOSFET, JFET, BJT of power semiconductor ability.
7. parallel driver circuit according to any one of claims 1 to 6, which is characterized in that the power semiconductor
Specifically include at least one of IGBT, MOSFET and IEGT.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711064273.2A CN109756098A (en) | 2017-11-02 | 2017-11-02 | A kind of parallel driver circuit of power semiconductor |
| PCT/CN2018/113605 WO2019085984A1 (en) | 2017-11-02 | 2018-11-02 | Parallel drive circuit for power semiconductor device |
| DE112018004224.3T DE112018004224T5 (en) | 2017-11-02 | 2018-11-02 | PARALLEL DRIVER CIRCUIT FOR PERFORMANCE SEMICONDUCTOR DEVICE |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711064273.2A CN109756098A (en) | 2017-11-02 | 2017-11-02 | A kind of parallel driver circuit of power semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109756098A true CN109756098A (en) | 2019-05-14 |
Family
ID=66331341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711064273.2A Pending CN109756098A (en) | 2017-11-02 | 2017-11-02 | A kind of parallel driver circuit of power semiconductor |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN109756098A (en) |
| DE (1) | DE112018004224T5 (en) |
| WO (1) | WO2019085984A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115766908A (en) * | 2021-09-02 | 2023-03-07 | 中车株洲电力机车研究所有限公司 | Communication protocol signal driving circuit, parallel interface circuit and high-voltage frequency converter |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111806341A (en) * | 2020-06-22 | 2020-10-23 | 淮阴师范学院 | Isolated form car atmosphere lamp controller based on CAN communication |
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| JPH0767320A (en) * | 1993-08-25 | 1995-03-10 | Toshiba Fa Syst Eng Kk | Driving circuit for power element |
| US20050225352A1 (en) * | 2004-04-08 | 2005-10-13 | International Business Machines Corporation | Buffer/driver circuits |
| CN101694972A (en) * | 2009-10-29 | 2010-04-14 | 西安工程大学 | Collectively-driven electrical electronic switch parallel circuit and concentration driving method |
| CN103560655A (en) * | 2013-09-27 | 2014-02-05 | 株洲变流技术国家工程研究中心有限公司 | Driver and system thereof based on parallel connection of multiple power semiconductor devices |
| CN106100298A (en) * | 2016-06-22 | 2016-11-09 | 杭州飞仕得科技有限公司 | A kind of novel drive circuit being applicable to the parallel connection of any multiple semiconductor |
| CN106230409A (en) * | 2016-08-25 | 2016-12-14 | 中车株洲电力机车研究所有限公司 | A kind of IGBT parallel drivers of band NTC acquisition function |
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| CN101217250A (en) * | 2007-01-04 | 2008-07-09 | 中国航天科工集团第三总体设计部 | An optical fiber drive method of power switch in DC full-bridge converter |
| CN103199678B (en) * | 2013-04-17 | 2015-05-20 | 国电南瑞科技股份有限公司 | Compact type insulated gate bipolar transistor (IGBT) module driving unit |
| CN204304771U (en) * | 2014-12-26 | 2015-04-29 | 常熟开关制造有限公司(原常熟开关厂） | A kind of parallel IGBT drive circuit |
-
2017
- 2017-11-02 CN CN201711064273.2A patent/CN109756098A/en active Pending
-
2018
- 2018-11-02 DE DE112018004224.3T patent/DE112018004224T5/en active Pending
- 2018-11-02 WO PCT/CN2018/113605 patent/WO2019085984A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0767320A (en) * | 1993-08-25 | 1995-03-10 | Toshiba Fa Syst Eng Kk | Driving circuit for power element |
| US20050225352A1 (en) * | 2004-04-08 | 2005-10-13 | International Business Machines Corporation | Buffer/driver circuits |
| CN101694972A (en) * | 2009-10-29 | 2010-04-14 | 西安工程大学 | Collectively-driven electrical electronic switch parallel circuit and concentration driving method |
| CN103560655A (en) * | 2013-09-27 | 2014-02-05 | 株洲变流技术国家工程研究中心有限公司 | Driver and system thereof based on parallel connection of multiple power semiconductor devices |
| CN106100298A (en) * | 2016-06-22 | 2016-11-09 | 杭州飞仕得科技有限公司 | A kind of novel drive circuit being applicable to the parallel connection of any multiple semiconductor |
| CN106230409A (en) * | 2016-08-25 | 2016-12-14 | 中车株洲电力机车研究所有限公司 | A kind of IGBT parallel drivers of band NTC acquisition function |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115766908A (en) * | 2021-09-02 | 2023-03-07 | 中车株洲电力机车研究所有限公司 | Communication protocol signal driving circuit, parallel interface circuit and high-voltage frequency converter |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019085984A1 (en) | 2019-05-09 |
| DE112018004224T5 (en) | 2020-05-14 |
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