CN106100298A - A kind of novel drive circuit being applicable to the parallel connection of any multiple semiconductor - Google Patents
A kind of novel drive circuit being applicable to the parallel connection of any multiple semiconductor Download PDFInfo
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- CN106100298A CN106100298A CN201610634166.8A CN201610634166A CN106100298A CN 106100298 A CN106100298 A CN 106100298A CN 201610634166 A CN201610634166 A CN 201610634166A CN 106100298 A CN106100298 A CN 106100298A
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- Prior art keywords
- isolated location
- power
- signal
- main
- applicable
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
Abstract
The invention discloses a kind of drive circuit being applicable to multichip semiconductor parallel connection, for driving any multiple semiconductor shunt load, including the road main signal isolated location being connected with upper computer control system and a road main power isolated location and the n road that is connected with driver element from signal isolated location and n road from power isolated location, driver element connects quasiconductor, the signal obtained from upper computer control system is done isolation processing by main signal isolated location, simultaneously by signal input n after isolation from signal isolated location；The power supply signal that main power isolated location power supply obtains does isolation processing, the power supply after isolation is exported n from power isolated location simultaneously.The present invention is used for signal isolated location and the power isolated location using principal and subordinate to arrange, and only needs main signal isolated location and main power isolated location to meet high pressure setting of insulating, solves tradition multiple semiconductor parallel drive volume greatly, the problem that cost is high.
Description
Technical field
The invention belongs to IGBT actuation techniques field, be specifically related to that a kind of novel to be applicable to any multiple semiconductor in parallel
Drive circuit.
Background technology
Seeing Fig. 1, show the driving principle figure that in prior art, multiple semiconductor is in parallel, every road quasiconductor in parallel is corresponding
The driving plate of one tunnel independence, drives and is provided with signal isolated location and power isolated location on plate, the driving structure of arrangement above
In, there is techniques below problem:
(1) for each parallel semiconductor, being required for configuring the driving that a road is the same, cause volume big, cost is high；
(2) being just as owing to each road drives, determining that insulation that each road drives is pressure all must be by high standard
Standard sets, and adds complexity and the cost of system；
(3) driving that the resistance to pressure request that insulate is the highest, when it produces, concordance is the poorest so that parallel semiconductor gate leve voltage
In sequential and amplitude, all there are differences, affect current-sharing effect.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of drive circuit being applicable to multichip semiconductor parallel connection, by using
The signal isolated location of principal and subordinate's setting and power isolated location, only need main signal isolated location and main power isolated location to meet height
Insulate pressure setting, solve tradition multiple semiconductor parallel drive volume big, the problem that cost is high.
For solving above-mentioned technical problem, the present invention adopts the following technical scheme that:
A kind of be applicable to the drive circuit that multichip semiconductor is in parallel, be used for driving any multiple semiconductor shunt load, including with
Upper computer control system be connected a road main signal isolated location and a road main power isolated location and be connected with driver element
N road from signal isolated location and n road from power isolated location, driver element connects quasiconductor, and main signal isolated location will
The signal obtained from upper computer control system does isolation processing, simultaneously by signal input n after isolation from signal isolated location；
The power supply that main power isolated location power supply obtains does isolation processing, the power supply after isolation is exported n simultaneously and isolates from power
Power supply.
Preferably, main signal isolated location and from signal isolated location by light, magnetic, capacitive coupling, be wirelessly transferred to
Few one realizes signal-isolated transmission.
Preferably, the isolating power of main signal isolated location is more than from the isolating power of signal isolated location.
Preferably, main power isolated location with from power isolation signals unit by magnetic field, capacitive coupling, mechanical couplings,
In being wirelessly transferred, at least one realizes power isolation transmission.
Preferably, the isolating power of main power isolated location is more than from the isolating power of power isolated location.
Preferably, any during quasiconductor includes IGBT, MOSFET or IEGT.
The present invention is used to have a following beneficial effect:
1, new framework can be in parallel for two with effectively save cost, and cost reduces at ＞ 40%, in parallel for three, becomes
This reduction is at ＞ 60%；And parallel connection number is the most, cost declines the most.
2, new framework enough can effectively reduce volume, comprehensively gets off, and volume energy reduces by 50%.
3, new framework can effectively improve equal flow horizontal, relatively original structure, current-sharing capability improving more than 50%, and can
To be substantially reduced the conforming requirement of system structure.
Accompanying drawing explanation
Fig. 1 is the theory diagram of multichip semiconductor parallel drive of the prior art；
Fig. 2 is the theory diagram being applicable to multichip semiconductor drive circuit in parallel of the embodiment of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Describe, it is clear that described embodiment is a part of embodiment of the present invention rather than whole embodiments wholely.Based on this
Embodiment in bright, the every other enforcement that those of ordinary skill in the art are obtained under not making creative work premise
Example, broadly falls into the scope of protection of the invention.
See Fig. 2, show the theory diagram being applicable to multichip semiconductor drive circuit 10 in parallel of the embodiment of the present invention,
For driving any multiple semiconductor shunt load, including the road main signal isolated location 1011 being connected with upper computer control system
With a road main power isolated location 1012 and the n road that is connected with driver element 1031 from signal isolated location 1021 and n road
From power isolated location 1022, driver element 1031 connects quasiconductor, and main signal isolated location 1011 will be from PC control system
The signal that system obtains does isolation processing, simultaneously by signal input n after isolation from signal isolated location 1021；Main power is isolated
The power supply signal obtained from power supply is done isolation processing by unit 1012, the power supply after isolation is exported simultaneously n from power every
From unit 1022, wherein n is the natural number more than or equal to 2.By the driving electricity being applicable to multichip semiconductor parallel connection of arrangement above
Road, only needs main signal isolated location and main power isolated location to meet higher insulation voltage endurance capability, from signal isolated location and
Less insulation voltage endurance capability is met from power isolated location.
In concrete application example, main signal isolated location and from signal isolated location by light, magnetic, capacitive coupling, nothing
In line transmission, at least one realizes signal-isolated transmission.The isolating power of main signal isolated location is more than from signal isolated location
Isolating power.Main power isolated location passes through magnetic field, capacitive coupling, mechanical couplings, wireless biography with from power isolation signals unit
In defeated, at least one realizes power isolation transmission.The isolating power of main power isolated location is more than from the isolation of power isolated location
Ability.Therefore, from signal isolated location and little from power insulating power supply volume, low cost, bandwidth is high, and concordance is good.Specifically
In application example, quasiconductor includes any in IGBT, MOSFET or IEGT.
By the drive circuit being applicable to multichip semiconductor parallel connection of arrangement above, as a example by 3300V IGBT, traditional
In independent drive scheme, each driving is required for providing same isolating power, power isolated location (i.e. DC/DC transformator) with
Signal isolated location all must provide for the insulating capacity of 8000Vac, and therefore, volume is big, and cost is high, and circuit is complicated；And apply this
After the embodiment of inventive embodiments, main signal isolated location and main power isolated location is only needed to meet the insulation energy of 8000Vac
Power, and for n from power isolated location and n signal isolated location, then need only provide for the isolation energy within 100V
Power, greatly reduces cost and volume.
Should be appreciated that exemplary embodiment as herein described is illustrative and be not restrictive.Although retouching in conjunction with accompanying drawing
State one or more embodiments of the invention, it should be understood by one skilled in the art that without departing from appended right
In the case of requiring the spirit and scope of the present invention limited, the change of various forms and details can be made.
Claims (6)
1. being applicable to the drive circuit that multichip semiconductor is in parallel, be used for driving any multiple semiconductor shunt load, its feature exists
In, including the road main signal isolated location being connected with upper computer control system and a road main power isolated location and with driving
The n road that unit is connected is from signal isolated location and n road from power isolated location, and driver element connects quasiconductor, main signal every
From unit, the signal obtained from upper computer control system is done isolation processing, simultaneously by signal input n after isolation from signal
Isolated location；The power supply signal that main power isolated location power supply obtains does isolation processing, the power supply after isolation is exported n simultaneously
Individual from power isolated location.
2. according to being applicable to, described in claim 1, the self-powered circuit that multichip semiconductor is in parallel, it is characterised in that main signal every
From unit with from signal isolated location passes through light, magnetic, capacitive coupling, is wirelessly transferred, at least one realizes signal-isolated transmission.
3. according to the self-powered circuit being applicable to multichip semiconductor parallel connection described in claim 1 or 2, it is characterised in that main letter
The isolating power of number isolated location is more than from the isolating power of signal isolated location.
4. according to being applicable to, described in claim 1, the self-powered circuit that multichip semiconductor is in parallel, it is characterised in that main power every
From unit and from power isolation signals unit passes through magnetic field, capacitive coupling, mechanical couplings, is wirelessly transferred, at least one realizes merit
Rate isolation transmission.
5. according to the self-powered circuit being applicable to multichip semiconductor parallel connection described in claim 1 or 2 or 4, it is characterised in that main
The isolating power of power isolated location is more than from the isolating power of power isolated location.
6. according to the arbitrary described drive circuit being applicable to multichip semiconductor parallel connection of claims 1 to 3, it is characterised in that partly lead
Body includes any in IGBT, MOSFET or IEGT.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610472897 | 2016-06-22 | ||
| CN2016104728977 | 2016-06-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106100298A true CN106100298A (en) | 2016-11-09 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610634166.8A Pending CN106100298A (en) | 2016-06-22 | 2016-08-03 | A kind of novel drive circuit being applicable to the parallel connection of any multiple semiconductor |
Country Status (1)
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|---|---|
| CN (1) | CN106100298A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109104174A (en) * | 2017-06-20 | 2018-12-28 | 华中科技大学 | A kind of master-slave mode IGBT driving circuit |
| WO2019085984A1 (en) * | 2017-11-02 | 2019-05-09 | 中车株洲电力机车研究所有限公司 | Parallel drive circuit for power semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120134181A1 (en) * | 2010-11-30 | 2012-05-31 | Fuji Electric Co., Ltd. | Gate driving power supply system and inverter control circuit |
| CN203313047U (en) * | 2013-07-04 | 2013-11-27 | 山西潞安环保能源开发股份有限公司 | Parallel bridge-type IGBT driving device |
-
2016
- 2016-08-03 CN CN201610634166.8A patent/CN106100298A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120134181A1 (en) * | 2010-11-30 | 2012-05-31 | Fuji Electric Co., Ltd. | Gate driving power supply system and inverter control circuit |
| CN203313047U (en) * | 2013-07-04 | 2013-11-27 | 山西潞安环保能源开发股份有限公司 | Parallel bridge-type IGBT driving device |
Non-Patent Citations (1)
| Title |
|---|
| 王凌云等: "500Kv固态Marx发生器IGBT多路驱动高压隔离供电电源的设计", 《高电压技术》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109104174A (en) * | 2017-06-20 | 2018-12-28 | 华中科技大学 | A kind of master-slave mode IGBT driving circuit |
| WO2019085984A1 (en) * | 2017-11-02 | 2019-05-09 | 中车株洲电力机车研究所有限公司 | Parallel drive circuit for power semiconductor device |
| CN109756098A (en) * | 2017-11-02 | 2019-05-14 | 中车株洲电力机车研究所有限公司 | A kind of parallel driver circuit of power semiconductor |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161109 |
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| RJ01 | Rejection of invention patent application after publication |