CN109752800A - A kind of all-optical switch based on PIT effect - Google Patents
A kind of all-optical switch based on PIT effect Download PDFInfo
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- CN109752800A CN109752800A CN201910085690.8A CN201910085690A CN109752800A CN 109752800 A CN109752800 A CN 109752800A CN 201910085690 A CN201910085690 A CN 201910085690A CN 109752800 A CN109752800 A CN 109752800A
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- resonant cavity
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Abstract
The invention discloses a kind of all-optical switch based on PIT effect, including silicon dioxide substrates, metal layer, graphene layer, first resonant cavity and the second resonant cavity, the silicon dioxide substrates are horizontally disposed, the metal layer is horizontally set on the upper end of the silicon dioxide substrates, the upper end is equipped with the slab waveguide extended along the longitudinal direction, the both ends of the waveguide extend horizontally to the rear and front end of the metal layer respectively, first resonant cavity and second resonant cavity are arranged at intervals on the upper end of the metal layer along the longitudinal direction respectively, and it is located at the left and right sides of the waveguide, and first resonant cavity and second resonant cavity are connected to the waveguide, the graphene layer is arranged between first resonant cavity and second resonant cavity, and it is filled in the waveguide, air is filled in the waveguide.The advantages of a kind of all-optical switch based on PIT effect disclosed by the invention has size small, low in energy consumption and fast response time.
Description
Technical field
The present invention relates to integreted phontonics fields.It is more particularly related to a kind of Quan Guangkai based on PIT effect
It closes.
Background technique
Photoswitch is realization optical cross connect, light exchange, optical add/drop multiplexer, network monitoring in broadband high-speed optical communication network
And the key node device of the functions such as self-healed protection.It is photoswitch small size, low with the development of large-scale integrated all-optical device
The demand of power consumption is more and more obvious, thus realize have low-power consumption, small size, the new working mechanism being easily integrated it is ultrafast complete
Photoswitch seems extremely important.
Summary of the invention
The object of the present invention is to provide a kind of all-optical switch based on PIT effect, solve problems described above.
In order to realize object of the present invention and further advantage, a kind of all-optical switch based on PIT effect is provided, is wrapped
Silicon dioxide substrates, metal layer, graphene layer, the first resonant cavity and the second resonant cavity are included, the silicon dioxide substrates level is set
It sets, the metal layer is horizontally set on the upper end of the silicon dioxide substrates, and the upper end is equipped with the bar shaped extended along the longitudinal direction
Waveguide, the both ends of the waveguide extend horizontally to the rear and front end of the metal layer, first resonant cavity and described respectively
Two resonant cavities are arranged at intervals on the upper end of the metal layer along the longitudinal direction respectively, and are located at the left and right two of the waveguide
Side, and first resonant cavity and second resonant cavity are connected to the waveguide, the graphene layer setting is described the
It between one resonant cavity and second resonant cavity, and is filled in the waveguide, air is filled in the waveguide.
Further, first resonant cavity and second resonant cavity are rectangular cavity, and first resonant cavity and
The length direction of second resonant cavity is arranged in left-right direction, and the right end of first resonant cavity is connected to the waveguide,
The left end of second resonant cavity is connected to the waveguide.
Further, the length of first resonant cavity is 150nm, and the length of second resonant cavity is 110nm, described
The spacing of first resonant cavity and second resonant cavity is 280nm.
Further, the metal layer is made of metallic gold.
Further, the metal layer with a thickness of 300nm.
Further, the depth of the waveguide is 150nm, width 52nm.
Further, the length of the graphene layer is 280nm.
The beneficial effects of the present invention are: a kind of all-optical switch based on PIT effect disclosed by the invention, solves traditional
All-optical switch needs big pumping light intensity, the problem that device size is big and the speed of response is slow, has several advantages that (1) is tied
Structure is simple, including ultra-compact structure, and size is small；(2) low in energy consumption, required pumping light intensity value significantly reduces；(3) response time is a picosecond amount
Grade, the speed of response of all-optical switch significantly improve.
Further advantage, target and feature of the invention will be partially reflected by the following instructions, and part will also be by this
The research and practice of invention and be understood by the person skilled in the art.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the all-optical switch based on PIT effect of the present invention；
Fig. 2 is changing rule figure of the PIT effect transmitted spectrum phase shift with waveguide signal light phase shift.
Specific embodiment
Present invention will be described in further detail below with reference to the accompanying drawings, to enable those skilled in the art referring to specification text
Word can be implemented accordingly.
It should be noted that experimental method described in following embodiments is unless otherwise specified conventional method, institute
Reagent and material are stated, unless otherwise specified, is commercially obtained.
As shown in Figure 1, the embodiment of the present invention provides a kind of all-optical switch based on PIT effect, including silicon dioxide liner
Bottom 1, metal layer 2, graphene layer 3, the first resonant cavity 4 and the second resonant cavity 5, the silicon dioxide substrates 1 are horizontally disposed, institute
The upper end that metal layer 2 is horizontally set on the silicon dioxide substrates 1 is stated, the upper end is equipped with the slab waveguide extended along the longitudinal direction
6, the both ends of the waveguide 6 extend horizontally to the rear and front end of the metal layer 2, first resonant cavity 4 and described respectively
Two resonant cavities 5 are arranged at intervals on the upper end of the metal layer 2 along the longitudinal direction respectively, and are located at the left and right of the waveguide 6
Two sides, and first resonant cavity 4 and second resonant cavity 5 are connected to the waveguide 6, the setting of graphene layer 3 exists
It between first resonant cavity 4 and second resonant cavity 5, and is filled in the waveguide 6, filling is free in the waveguide 6
Gas.
In the above-described embodiments, the design principle of all-optical switch described in above-described embodiment is that the dynamic of PIT effect is adjustable
Humorous property, based on SPPs local light and PIT effect slower rays the chemiluminescence principle big to optics Kerr effect, wherein
Transmission of the SPPs wave in plasma filled waveguide can overcome the limitation of classical diffraction limit, and can be in nano-scale range
Interior focusing wave is manipulated, and has the advantage for reducing integrated photonic device chip size and reducing device power consumption, and PIT effect is
The product that traditional class EIT effect is combined with surface plasma excimer, have to operate at room temperature, the compatibility of integrated chip
The advantages that controllability of property, the tunability of transmission band and bandwidth；Electromagnetic wave is gathered in metal-dielectric interface, and
And optics Kerr is imitated using SPPs so that excitation forms SPPs wave with being transferred from by electronic coupled resonance in metal
The enhancing characteristic answered, the transmission phase of dynamic tuning SPPs waveguide realize the dynamic-tuning mechanism of PIT effect, and then with reality
The logic state of " OFF " and " ON " of existing all-optical switch.All-optical switch described in above-described embodiment, signal light and pump light pass through
The mode of coupling is inputted in the boundary of waveguide 5, and pump light acts on metallic gold and graphene-air interface, pump light
Cross-phase Modulation effect is generated to SPPs wave signal light by force.Under static conditions (not pumping the condition of light action), SPPs
The mode of resonance of waveguide dispersion equation meets close coupling interference condition and (when PIT effect transmitted spectrum phase shift is 0, interferes for close coupling
Condition), by changing the light intensity of pump light, the SPPs waveguide changed between the first resonant cavity 4 and the second resonant cavity 5 is effectively reflected
Rate, and then regulate and control PIT effect transmitted spectrum and realize phase shift multiplier effect, and made by dynamic tuning SPPs waveguide transmission phase shift
It is weak coupling interference condition (when PIT is imitated that the mode of resonance of first resonant cavity 4 and the second resonant cavity 5 changes from close coupling interference condition
Answer transmitted spectrum phase shift be π when, be weak coupling interference condition), with two that realize all-optical switch corresponding logic states " ON "
" OFF ".Wherein, air is filled in waveguide, to form dielectric as the SPPs wave of the air combined material structure system of graphene-
Guide structure；The wavelength of signal light is 786 nm, and the wavelength of pump light is 830nm, as waveguide signal light 0.5 π of phase shift variations,
PIT effect transmitted spectrum phase shift variations π, the pumping light intensity that all-optical switch needs is only 5.8MW/cm2, significantly reduce light and open
The power consumption of pass.The response time of graphene is picosecond magnitude, improves the speed of response of all-optical switch；The boundary of waveguide 5 is
Refer to the intersection of waveguide front-ends air and metal layer.The present invention uses graphene-Au composite waveguide structure, by double nano chamber
The PIT effect that side coupled waveguide system generates is applied in integrated all-optical switches, solves traditional all-optical switch needs
Big pumping light intensity and the slow problem of the speed of response, reduce the power consumption of all-optical switch significantly and improve the sound of all-optical switch
Speed is answered, there is wider application prospect and biggish development potentiality.
Preferably, first resonant cavity 4 and second resonant cavity 5 are rectangular cavity, and 4 He of the first resonant cavity
The length direction of second resonant cavity 5 is arranged in left-right direction, and the right end of first resonant cavity 4 and the waveguide 6 connect
Logical, the left end of second resonant cavity 5 is connected to the waveguide 6.
In the above-described embodiments, the first resonant cavity 4 of rectangle and the second resonant cavity 5 have structure simple and are convenient for technique system
The advantages that making.
Preferably, the length of first resonant cavity 4 is 150nm, and the length of second resonant cavity 5 is 110nm, described
The width of first resonant cavity 4 and second resonant cavity 5 is 52nm, first resonant cavity 4 and second resonant cavity 5
Spacing is 280nm.
In the above-described embodiments, the dynamic that the distance between the first resonant cavity 4 and the second resonant cavity 5 influence PIT effect can
Tuning process, specially influence PIT effect transmitted spectrum phase shift, the distance between the first resonant cavity 4 and the second resonant cavity 5 influence
INDIRECT COUPLING (phase coupling estimation) effect between first resonant cavity 4 and the second resonant cavity 5, and the first resonant cavity 4 and the second resonance
INDIRECT COUPLING (phase coupling estimation) effect between chamber 5 changes PIT effect transmitted spectrum phase difference；When the first resonant cavity 4 and second
When the spacing of resonant cavity 5 is 280nm, it can meet under the action of no pump light, i.e., under static conditions, 4 He of the first resonant cavity
Mode of resonance between second resonant cavity 5 meets close coupling interference condition, at this point, PIT effect transmitted spectrum phase shift is 0, Quan Guangkai
Close " ON " state of being in.In addition, while all-optical switch has low energy consumption and super fast response speed, the size of device size
The practical performance and application prospect that will have a direct impact on all-optical switch, when the length of the first resonant cavity 4 is 150nm, the second resonant cavity 5
Length be 110nm, when the width of the first resonant cavity 4 and the second resonant cavity 5 is 52nm, be both able to satisfy all-optical switch have it is low
While energy consumption and super fast response speed requirement, the including ultra-compact structure of all-optical switch may be implemented, significantly reduce all-optical switch
(area of entire all-optical switch is less than 0.5 μm for the size of device2), make all-optical switch that there is the advantage of small size and wide answer
Use prospect.
Preferably, the metal layer 2 is made of metallic gold.
In the above-described embodiments, SPPs wave in metallic gold transmission loss significantly less than other metals.
Preferably, the metal layer 2 with a thickness of 300nm.
In the above-described embodiments, when metal layer 2 is with a thickness of 300nm, all-optical switch is being able to achieve reduction power consumption and is mentioning
Under the purpose of high response speed, it can also make all-optical switch that there is lesser device size.
Preferably, the depth of the waveguide 6 is 150nm, width 52nm.
In the above-described embodiments, when the depth of waveguide 6 is 150nm, and width is 52nm, cooperation width is 52nm's
First resonant cavity 4 and the second resonant cavity 5, the second resonant cavity 5 that length is the first resonant cavity of 150nm 4 and length is 110nm, both
It can make all-optical switch that there is lower power consumption and the ultrafast speed of response, moreover it is possible to meet the needs of all-optical switch super-small.
Preferably, the length of the graphene layer 3 is 280nm.
In the above-described embodiments, in visible light and near infrared region, graphene has big optics Kerr nonlinear factor
(n2=-1.2 × 10–7cm2/ W), using graphene-metal/composite material waveguiding structure, utilize the enhancing mechanism of optics Kerr effect
The pumping light intensity of photoswitch can be further decreased.Wherein, graphene layer 3 is single-layer graphene.
Although the embodiments of the present invention have been disclosed as above, but its is not only in the description and the implementation listed
With it can be fully applied to various fields suitable for the present invention, for those skilled in the art, can be easily
Realize other modification, therefore without departing from the general concept defined in the claims and the equivalent scope, the present invention is simultaneously unlimited
In specific details and legend/embodiment shown and described herein.
Claims (7)
1. a kind of all-optical switch based on PIT effect, which is characterized in that including silicon dioxide substrates (1), metal layer (2), graphite
Alkene layer (3), the first resonant cavity (4) and the second resonant cavity (5), the silicon dioxide substrates (1) are horizontally disposed, the metal layer
(2) it is horizontally set on the upper end of the silicon dioxide substrates (1), the upper end is equipped with slab waveguide (6), the wave along the longitudinal direction
The both ends for leading (6) extend horizontally to the rear and front end of the metal layer (2), first resonant cavity (4) and described second respectively
Resonant cavity (5) is arranged at intervals on the upper end of the metal layer (2) along the longitudinal direction respectively, and is located at the waveguide (6)
The left and right sides, and first resonant cavity (4) and second resonant cavity (5) are connected to the waveguide (6), the graphene
Layer (3) is arranged between first resonant cavity (4) and second resonant cavity (5), and is filled in the waveguide (6), institute
It states in waveguide (6) filled with air.
2. a kind of all-optical switch based on PIT effect according to claim 1, which is characterized in that first resonant cavity
(4) and second resonant cavity (5) is rectangular cavity, and the length of first resonant cavity (4) and second resonant cavity (5)
Direction is arranged in left-right direction, and the right end of first resonant cavity (4) is connected to the waveguide (6), second resonant cavity
(5) left end is connected to the waveguide (6).
3. a kind of all-optical switch based on PIT effect according to claim 2, which is characterized in that first resonant cavity
(4) length is 150nm, and the length of second resonant cavity (5) is 110nm, first resonant cavity (4) and described second humorous
The spacing of vibration chamber (5) is 280nm.
4. a kind of all-optical switch based on PIT effect according to claim 1, which is characterized in that the metal layer (2) by
Metallic gold is made.
5. a kind of all-optical switch based on PIT effect according to claim 4, which is characterized in that the metal layer (2)
With a thickness of 300nm.
6. a kind of all-optical switch based on PIT effect according to claim 1, which is characterized in that the depth of the waveguide (6)
Degree is 150nm, width 52nm.
7. a kind of all-optical switch based on PIT effect according to claim 1, which is characterized in that the graphene layer (3)
Length be 280nm.
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| CN110441975A (en) * | 2019-07-16 | 2019-11-12 | 湖北工程学院 | A kind of logical AND gate device based on graphene nano Investigation of Waveguide Coupled Cavity |
| CN110568553A (en) * | 2019-10-10 | 2019-12-13 | 桂林电子科技大学 | All-optical plasma switch based on resonant cavity coupling metal waveguide structure |
| CN114301412B (en) * | 2021-12-29 | 2024-04-30 | 苏州达波新材科技有限公司 | Lamb wave acoustic wave device with improved substrate structure and method of making same |
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| CN109752800B (en) | 2020-07-10 |
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