CN109750511B - Polythiophene conductive fabric for flexible sensor and preparation method - Google Patents
Polythiophene conductive fabric for flexible sensor and preparation method Download PDFInfo
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Abstract
The invention relates to the technical field of conductive fabrics, and discloses a polythiophene conductive fabric for a flexible sensor, which comprises the following raw materials in parts by weight: 1-3 parts of weft plain knitted fabric, 1.25-1.38 parts of p-toluenesulfonic acid, 1-1.6 parts of camphorsulfonic acid, 8-12 parts of ammonium persulfate and 10 parts of thiophene. The invention also discloses a preparation method of the polythiophene conductive fabric for the flexible sensor, which takes the weft plain knitted fabric and polythiophene as raw materials, takes p-toluenesulfonic acid and camphorsulfonic acid as doping agents and ammonium persulfate as an oxidizing agent, and adopts a polythiophene vapor deposition method to prepare the polythiophene conductive fabric in a low-temperature vacuum environment. The invention solves the technical problem of poor stability of the conductive performance of the conductive fabric for manufacturing the flexible sensor.
Description
Technical Field
The invention relates to the technical field of conductive fabrics, in particular to a polythiophene conductive fabric for a flexible sensor and a preparation method thereof.
Background
At present, the conductive textile is used as a sensor material, such as a tension sensor, a pressure sensor and a sensor for detecting gas and special substances, and the application of the sensors in the fields of intelligent clothing, industrial industry and the like has achieved certain effect. The intelligent flexible sensor further integrates the textile and clothing industry into the intelligent informatization step, so that the added value of the textile is improved, and the textile is not only widely applied to the clothing industry, but also more generally applied to the medical care and industrial industry.
The intelligent flexible sensing material can be fully combined with clothes, has the excellent characteristics which are not possessed by other metal sensors such as small volume, washability, softness, no stiffness and the like, and the intelligent flexible sensor has high sensitivity, low hysteresis, quick response capability and larger working response range, but the performances do not reach an ideal state, and particularly the conductivity has the defect of instability.
The invention provides a polythiophene conductive fabric for a flexible sensor and a preparation method thereof, and aims to solve the technical problem of poor stability of the conductive performance of the conductive fabric for manufacturing the flexible sensor.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a polythiophene conductive fabric for a flexible sensor and a preparation method thereof, and solves the technical problem of poor stability of the conductive performance of the conductive fabric for manufacturing the flexible sensor.
(II) technical scheme
In order to achieve the purpose, the invention provides the following technical scheme:
the polythiophene conductive fabric for the flexible sensor comprises the following raw materials in parts by weight: 1-3 parts of weft plain knitted fabric, 1.25-1.38 parts of p-toluenesulfonic acid, 1-1.6 parts of camphorsulfonic acid, 8-12 parts of ammonium persulfate and 10 parts of thiophene.
Preferably, the polythiophene conductive fabric comprises the following raw materials in parts by weight: 2 parts of weft plain knitted fabric, 1.3 parts of p-toluenesulfonic acid, 1.2 parts of camphorsulfonic acid, 10 parts of ammonium persulfate and 10 parts of thiophene.
Preferably, the polythiophene conductive fabric comprises the following raw materials in parts by weight: 2 parts of weft plain knitted fabric, 1.35 parts of p-toluenesulfonic acid, 1.5 parts of camphorsulfonic acid, 8 parts of ammonium persulfate and 10 parts of thiophene.
Preferably, the polythiophene conductive fabric comprises the following raw materials in parts by weight: 3 parts of weft plain knitted fabric, 1.3 parts of p-toluenesulfonic acid, 1.6 parts of camphorsulfonic acid, 12 parts of ammonium persulfate and 10 parts of thiophene.
Preferably, the polythiophene conductive fabric comprises the following raw materials in parts by weight: 2 parts of weft plain knitted fabric, 1.25 parts of p-toluenesulfonic acid, 1.6 parts of camphorsulfonic acid, 12 parts of ammonium persulfate and 10 parts of thiophene.
The preparation method of the polythiophene conductive fabric for the flexible sensor comprises the following steps:
s1, adding 5-8 parts by mass of sodium hydroxide and 1-3 parts by mass of acetone into 24-30 parts by mass of deionized water, and uniformly stirring to prepare a pretreatment solution;
s2, adding 1-3 parts by mass of weft plain knitted fabric into the pretreatment solution in the step S1, soaking and boiling at the constant temperature of 40-60 ℃ for 1-2 hours, then taking out the fabric, repeatedly washing with deionized water until the pH value is neutral, and naturally drying at room temperature to prepare the pretreated fabric;
s3, adding 1.25-1.38 parts by mass of p-toluenesulfonic acid and 1-1.6 parts by mass of camphorsulfonic acid into 5-10 parts by mass of deionized water, and preparing to obtain a wetting solution A after uniform ultrasonic dispersion;
s4, immersing the pretreated fabric in the step S2 in the impregnating solution A in the step S3, soaking at the constant temperature of 35-40 ℃ for 1.5-2h, taking out the fabric, and naturally airing at room temperature to prepare a fabric A;
s5, adding 8-12 parts by mass of ammonium persulfate into 8-15 parts by mass of isopropanol, stirring and mixing uniformly, and preparing to obtain a soaking liquid B;
s6, immersing the fabric A in the step S4 in the impregnating solution B in the step S5, soaking for 1.5-2h at the constant temperature of 35-40 ℃, taking out the fabric, placing the fabric in a vacuum drying oven, and drying for 2-4h at the temperature of 45-65 ℃ to prepare a fabric B;
s7, hanging the fabric B in the step S6 in a closed container, placing 10 parts by mass of thiophene under the fabric B in the closed container, carrying out polymerization reaction for 3-6h under the vacuum condition at 25-40 ℃, taking out the fabric, washing the fabric for 3-5 times by using deionized water, placing the fabric in a vacuum drying oven, drying the fabric for 1-2h at 45-65 ℃, taking out the fabric, and naturally cooling the fabric to room temperature to prepare the polythiophene conductive fabric.
(III) advantageous technical effects
Compared with the prior art, the invention has the following beneficial technical effects:
1. the average change rate of the static surface specific resistance of the polythiophene conductive fabric in 1-60 days is 7.21-7.62%, and compared with the average change rate of the static surface specific resistance of the polythiophene conductive fabric in the comparative example in 1-60 days which is 10.35-11.23%, the technical effect of obviously reducing the average change rate of the static surface specific resistance of the polythiophene conductive fabric in each day is achieved;
the static surface specific resistance of the polythiophene conductive fabric is 628-759 omega at the temperature of 20-60 ℃, and compared with the static surface specific resistance of 806-1255 omega at the temperature of 20-60 ℃ of the polythiophene conductive fabric in the comparative example, the technical effect of remarkably reducing the static surface specific resistance value of the polythiophene conductive fabric is achieved, and the technical effect of remarkably reducing the change range of the static surface specific resistance of the polythiophene conductive fabric along with the temperature is achieved;
the static surface specific resistance of the polythiophene conductive fabric is 542-589 omega when the relative humidity is 40-80%, compared with the static surface specific resistance of 852-978 omega when the relative humidity is 40-80% in the comparative example, the technical effect of remarkably reducing the static surface specific resistance value of the polythiophene conductive fabric is achieved, and the technical effect of remarkably reducing the change range of the static surface specific resistance of the polythiophene conductive fabric along with the relative humidity is achieved;
therefore, the technical effect of remarkably improving the stability of the conductivity of the polythiophene conductive fabric is achieved by the technical scheme.
2. According to the preparation method, the weft plain knitted fabric and polythiophene are used as raw materials, the p-toluenesulfonic acid and the camphorsulfonic acid are used as doping agents, the ammonium persulfate is used as an oxidizing agent, a polythiophene vapor deposition method is adopted, the polythiophene conductive fabric is prepared in a low-temperature vacuum environment, then the polythiophene conductive fabric is used for preparing the flexible sensor, compared with the traditional preparation method, the technical effect of shortening polymerization time is achieved, and the prepared polythiophene conductive fabric has excellent conductive stability.
Detailed Description
The first embodiment is as follows:
the polythiophene conductive fabric comprises the following raw materials in parts by weight: 1 part of weft plain knitted fabric, 1.25 parts of p-toluenesulfonic acid, 1 part of camphorsulfonic acid, 8 parts of ammonium persulfate and 10 parts of thiophene;
the preparation method of the polythiophene conductive fabric comprises the following steps:
s1, adding 5 parts by mass of sodium hydroxide and 1 part by mass of acetone into 24 parts by mass of deionized water, and uniformly stirring to prepare a pretreatment solution;
s2, adding 1 part by mass of weft plain knitted fabric into the pretreatment solution in the step S1, soaking and boiling for 1h at a constant temperature of 40 ℃, then taking out the fabric, repeatedly washing with deionized water until the pH value is neutral, and naturally drying at room temperature to prepare a pretreated fabric;
s3, adding 1.25 parts by mass of p-toluenesulfonic acid and 1 part by mass of camphorsulfonic acid into 5 parts by mass of deionized water, and preparing to obtain a wetting solution A after uniform ultrasonic dispersion;
s4, immersing the pretreated fabric in the step S2 in the impregnating solution A in the step S3, soaking for 1.5h at a constant temperature of 35 ℃, taking out the fabric, and naturally airing at room temperature to prepare a fabric A;
s5, adding 8 parts by mass of ammonium persulfate into 8 parts by mass of isopropanol, stirring and mixing uniformly, and preparing to obtain a soaking liquid B;
s6, immersing the fabric A in the step S4 in the impregnating solution B in the step S5, soaking for 1.5 hours at a constant temperature of 35 ℃, taking out the fabric, placing the fabric in a vacuum drying oven, and drying for 2 hours at 45 ℃ to prepare a fabric B;
s7, hanging the fabric B in the step S6 in a closed container, placing 10 parts by mass of thiophene under the fabric B in the closed container, carrying out polymerization reaction for 3 hours at the temperature of 25 ℃, taking out the fabric, washing for 3 times by using deionized water, placing the fabric in a vacuum drying oven, drying for 1 hour at the temperature of 45 ℃, taking out, and naturally cooling to room temperature to prepare the polythiophene conductive fabric.
Example two:
the polythiophene conductive fabric comprises the following raw materials in parts by weight: 3 parts of weft plain knitted fabric, 1.38 parts of p-toluenesulfonic acid, 1.6 parts of camphorsulfonic acid, 12 parts of ammonium persulfate and 10 parts of thiophene;
the preparation method of the polythiophene conductive fabric comprises the following steps:
s1, adding 8 parts by mass of sodium hydroxide and 3 parts by mass of acetone into 30 parts by mass of deionized water, and uniformly stirring to prepare a pretreatment solution;
s2, adding 3 parts by mass of weft plain knitted fabric into the pretreatment solution in the step S1, soaking and boiling for 2 hours at a constant temperature of 60 ℃, then taking out the fabric, repeatedly washing with deionized water until the pH value is neutral, and naturally drying at room temperature to prepare a pretreated fabric;
s3, adding 1.38 parts by mass of p-toluenesulfonic acid and 1.6 parts by mass of camphorsulfonic acid into 10 parts by mass of deionized water, and preparing to obtain a wetting solution A after uniform ultrasonic dispersion;
s4, immersing the pretreated fabric in the step S2 in the impregnating solution A in the step S3, soaking for 2 hours at a constant temperature of 40 ℃, taking out the fabric, and naturally airing at room temperature to prepare a fabric A;
s5, adding 12 parts by mass of ammonium persulfate into 15 parts by mass of isopropanol, stirring and mixing uniformly, and preparing to obtain a soaking solution B;
s6, immersing the fabric A in the step S4 in the impregnating solution B in the step S5, soaking for 2 hours at a constant temperature of 40 ℃, taking out the fabric, placing the fabric in a vacuum drying oven, and drying for 4 hours at a temperature of 65 ℃ to prepare a fabric B;
s7, hanging the fabric B in the step S6 in a closed container, placing 10 parts by mass of thiophene under the fabric B in the closed container, carrying out polymerization reaction for 6 hours at 40 ℃ under vacuum, taking out the fabric, washing the fabric for 5 times by using deionized water, placing the fabric in a vacuum drying oven, drying the fabric for 2 hours at 65 ℃, taking out the fabric, and naturally cooling the fabric to room temperature to prepare the polythiophene conductive fabric.
Example three:
the polythiophene conductive fabric comprises the following raw materials in parts by weight: 2 parts of weft plain knitted fabric, 1.3 parts of p-toluenesulfonic acid, 1.2 parts of camphorsulfonic acid, 10 parts of ammonium persulfate and 10 parts of thiophene;
the preparation method of the polythiophene conductive fabric comprises the following steps:
s1, adding 6 parts by mass of sodium hydroxide and 2 parts by mass of acetone into 25 parts by mass of deionized water, and uniformly stirring to prepare a pretreatment solution;
s2, adding 2 parts by mass of weft plain knitted fabric into the pretreatment solution in the step S1, soaking and boiling for 1.5 hours at a constant temperature of 50 ℃, then taking out the fabric, repeatedly washing with deionized water until the pH value is neutral, and naturally drying at room temperature to prepare a pretreated fabric;
s3, adding 1.3 parts by mass of p-toluenesulfonic acid and 1.2 parts by mass of camphorsulfonic acid into 8 parts by mass of deionized water, and preparing to obtain a wetting solution A after uniform ultrasonic dispersion;
s4, immersing the pretreated fabric in the step S2 in the impregnating solution A in the step S3, soaking for 1.8h at a constant temperature of 38 ℃, taking out the fabric, and naturally airing at room temperature to prepare a fabric A;
s5, adding 10 parts by mass of ammonium persulfate into 10 parts by mass of isopropanol, stirring and mixing uniformly, and preparing to obtain a soaking liquid B;
s6, immersing the fabric A in the step S4 in the impregnating solution B in the step S5, soaking for 2 hours at a constant temperature of 38 ℃, taking out the fabric, placing the fabric in a vacuum drying oven, and drying for 3 hours at 50 ℃ to prepare a fabric B;
s7, hanging the fabric B in the step S6 in a closed container, placing 10 parts by mass of thiophene under the fabric B in the closed container, carrying out polymerization reaction for 4 hours at the temperature of 30 ℃, taking out the fabric, washing the fabric for 5 times by using deionized water, placing the fabric in a vacuum drying oven, drying the fabric for 2 hours at the temperature of 55 ℃, taking out the fabric, and naturally cooling the fabric to room temperature to prepare the polythiophene conductive fabric.
Example four:
the polythiophene conductive fabric comprises the following raw materials in parts by weight: 2 parts of weft plain knitted fabric, 1.35 parts of p-toluenesulfonic acid, 1.5 parts of camphorsulfonic acid, 8 parts of ammonium persulfate and 10 parts of thiophene;
the preparation method of the polythiophene conductive fabric comprises the following steps:
s1, adding 7 parts by mass of sodium hydroxide and 3 parts by mass of acetone into 30 parts by mass of deionized water, and uniformly stirring to prepare a pretreatment solution;
s2, adding 2 parts by mass of weft plain knitted fabric into the pretreatment solution in the step S1, soaking and boiling for 1h at a constant temperature of 60 ℃, then taking out the fabric, repeatedly washing with deionized water until the pH value is neutral, and naturally drying at room temperature to prepare a pretreated fabric;
s3, adding 1.35 parts by mass of p-toluenesulfonic acid and 1.5 parts by mass of camphorsulfonic acid into 8 parts by mass of deionized water, and preparing to obtain a wetting solution A after uniform ultrasonic dispersion;
s4, immersing the pretreated fabric in the step S2 in the impregnating solution A in the step S3, soaking for 1.5h at a constant temperature of 40 ℃, taking out the fabric, and naturally airing at room temperature to prepare a fabric A;
s5, adding 8 parts by mass of ammonium persulfate into 10 parts by mass of isopropanol, stirring and mixing uniformly, and preparing to obtain a soaking solution B;
s6, immersing the fabric A in the step S4 in the impregnating solution B in the step S5, soaking for 1.5 hours at a constant temperature of 40 ℃, taking out the fabric, placing the fabric in a vacuum drying oven, and drying for 2-4 hours at 50 ℃ to prepare a fabric B;
s7, hanging the fabric B in the step S6 in a closed container, placing 10 parts by mass of thiophene under the fabric B in the closed container, carrying out polymerization reaction for 5 hours at the temperature of 30 ℃, taking out the fabric, washing the fabric for 4 times by using deionized water, placing the fabric in a vacuum drying oven, drying the fabric for 2 hours at the temperature of 55 ℃, taking out the fabric, and naturally cooling the fabric to room temperature to prepare the polythiophene conductive fabric.
Example five:
the polythiophene conductive fabric comprises the following raw materials in parts by weight: 3 parts of weft plain knitted fabric, 1.3 parts of p-toluenesulfonic acid, 1.6 parts of camphorsulfonic acid, 12 parts of ammonium persulfate and 10 parts of thiophene;
the preparation method of the polythiophene conductive fabric comprises the following steps:
s1, adding 6 parts by mass of sodium hydroxide and 3 parts by mass of acetone into 25 parts by mass of deionized water, and uniformly stirring to prepare a pretreatment solution;
s2, adding 3 parts by mass of weft plain knitted fabric into the pretreatment solution in the step S1, soaking and boiling for 2 hours at a constant temperature of 40 ℃, then taking out the fabric, repeatedly washing with deionized water until the pH value is neutral, and naturally drying at room temperature to prepare a pretreated fabric;
s3, adding 1.3 parts by mass of p-toluenesulfonic acid and 1.6 parts by mass of camphorsulfonic acid into 10 parts by mass of deionized water, and preparing to obtain a wetting solution A after uniform ultrasonic dispersion;
s4, immersing the pretreated fabric in the step S2 in the impregnating solution A in the step S3, soaking for 1.5h at a constant temperature of 35 ℃, taking out the fabric, and naturally airing at room temperature to prepare a fabric A;
s5, adding 12 parts by mass of ammonium persulfate into 10 parts by mass of isopropanol, stirring and mixing uniformly, and preparing to obtain a soaking solution B;
s6, immersing the fabric A in the step S4 in the impregnating solution B in the step S5, soaking for 2 hours at a constant temperature of 40 ℃, taking out the fabric, placing the fabric in a vacuum drying oven, and drying for 3 hours at a temperature of 60 ℃ to prepare a fabric B;
s7, hanging the fabric B in the step S6 in a closed container, placing 10 parts by mass of thiophene under the fabric B in the closed container, carrying out polymerization reaction for 4 hours at 40 ℃ under vacuum, taking out the fabric, washing the fabric for 5 times by using deionized water, placing the fabric in a vacuum drying oven, drying the fabric for 2 hours at 55 ℃, taking out the fabric, and naturally cooling the fabric to room temperature to prepare the polythiophene conductive fabric.
Example six:
the polythiophene conductive fabric comprises the following raw materials in parts by weight: 2 parts of weft plain knitted fabric, 1.25 parts of p-toluenesulfonic acid, 1.6 parts of camphorsulfonic acid, 12 parts of ammonium persulfate and 10 parts of thiophene;
the preparation method of the polythiophene conductive fabric comprises the following steps:
s1, adding 8 parts by mass of sodium hydroxide and 3 parts by mass of acetone into 30 parts by mass of deionized water, and uniformly stirring to prepare a pretreatment solution;
s2, adding 2 parts by mass of weft plain knitted fabric into the pretreatment solution in the step S1, soaking and boiling for 1.5 hours at a constant temperature of 40 ℃, then taking out the fabric, repeatedly washing with deionized water until the pH value is neutral, and naturally drying at room temperature to prepare pretreated fabric;
s3, adding 1.25 parts by mass of p-toluenesulfonic acid and 1.6 parts by mass of camphorsulfonic acid into 8 parts by mass of deionized water, and preparing to obtain a wetting solution A after uniform ultrasonic dispersion;
s4, immersing the pretreated fabric in the step S2 in the impregnating solution A in the step S3, soaking for 1.8h at a constant temperature of 40 ℃, taking out the fabric, and naturally airing at room temperature to prepare a fabric A;
s5, adding 12 parts by mass of ammonium persulfate into 8 parts by mass of isopropanol, stirring and mixing uniformly, and preparing to obtain a soaking solution B;
s6, immersing the fabric A in the step S4 in the impregnating solution B in the step S5, soaking for 2 hours at a constant temperature of 38 ℃, taking out the fabric, placing the fabric in a vacuum drying oven, and drying for 3 hours at a temperature of 60 ℃ to prepare a fabric B;
s7, hanging the fabric B in the step S6 in a closed container, placing 10 parts by mass of thiophene under the fabric B in the closed container, carrying out polymerization reaction for 4 hours at 40 ℃ under vacuum, taking out the fabric, washing the fabric for 5 times by using deionized water, placing the fabric in a vacuum drying oven, drying the fabric for 2 hours at 60 ℃, taking out the fabric, and naturally cooling the fabric to room temperature to prepare the polythiophene conductive fabric.
Comparative example one:
the polythiophene conductive fabric comprises the following raw materials in parts by weight: 2 parts of weft plain knitted fabric, 1.3 parts of p-toluenesulfonic acid, 10 parts of ammonium persulfate and 10 parts of thiophene;
the preparation method of the polythiophene conductive fabric comprises the following steps:
s1, adding 6 parts by mass of sodium hydroxide and 2 parts by mass of acetone into 25 parts by mass of deionized water, and uniformly stirring to prepare a pretreatment solution;
s2, adding 2 parts by mass of weft plain knitted fabric into the pretreatment solution in the step S1, soaking and boiling for 1.5 hours at a constant temperature of 50 ℃, then taking out the fabric, repeatedly washing with deionized water until the pH value is neutral, and naturally drying at room temperature to prepare a pretreated fabric;
s3, adding 1.3 parts by mass of p-toluenesulfonic acid into 8 parts by mass of deionized water, and preparing to obtain a wetting solution A after uniform ultrasonic dispersion;
s4, immersing the pretreated fabric in the step S2 in the impregnating solution A in the step S3, soaking for 1.8h at a constant temperature of 38 ℃, taking out the fabric, and naturally airing at room temperature to prepare a fabric A;
s5, adding 10 parts by mass of ammonium persulfate into 10 parts by mass of isopropanol, stirring and mixing uniformly, and preparing to obtain a soaking liquid B;
s6, immersing the fabric A in the step S4 in the impregnating solution B in the step S5, soaking for 2 hours at a constant temperature of 38 ℃, taking out the fabric, placing the fabric in a vacuum drying oven, and drying for 3 hours at 50 ℃ to prepare a fabric B;
s7, hanging the fabric B in the step S6 in a closed container, placing 10 parts by mass of thiophene under the fabric B in the closed container, carrying out polymerization reaction for 4 hours at the temperature of 30 ℃, taking out the fabric, washing the fabric for 5 times by using deionized water, placing the fabric in a vacuum drying oven, drying the fabric for 2 hours at the temperature of 55 ℃, taking out the fabric, and naturally cooling the fabric to room temperature to prepare the polythiophene conductive fabric.
Comparative example two:
the polythiophene conductive fabric comprises the following raw materials in parts by weight: 2 parts of weft plain knitted fabric, 1.5 parts of camphorsulfonic acid, 8 parts of ammonium persulfate and 10 parts of thiophene;
the preparation method of the polythiophene conductive fabric comprises the following steps:
s1, adding 7 parts by mass of sodium hydroxide and 3 parts by mass of acetone into 30 parts by mass of deionized water, and uniformly stirring to prepare a pretreatment solution;
s2, adding 2 parts by mass of weft plain knitted fabric into the pretreatment solution in the step S1, soaking and boiling for 1h at a constant temperature of 60 ℃, then taking out the fabric, repeatedly washing with deionized water until the pH value is neutral, and naturally drying at room temperature to prepare a pretreated fabric;
s3, adding 1.5 parts by mass of camphorsulfonic acid into 8 parts by mass of deionized water, and preparing to obtain a soaking solution A after uniform ultrasonic dispersion;
s4, immersing the pretreated fabric in the step S2 in the impregnating solution A in the step S3, soaking for 1.5h at a constant temperature of 40 ℃, taking out the fabric, and naturally airing at room temperature to prepare a fabric A;
s5, adding 8 parts by mass of ammonium persulfate into 10 parts by mass of isopropanol, stirring and mixing uniformly, and preparing to obtain a soaking solution B;
s6, immersing the fabric A in the step S4 in the impregnating solution B in the step S5, soaking for 1.5 hours at a constant temperature of 40 ℃, taking out the fabric, placing the fabric in a vacuum drying oven, and drying for 2-4 hours at 50 ℃ to prepare a fabric B;
s7, hanging the fabric B in the step S6 in a closed container, placing 10 parts by mass of thiophene under the fabric B in the closed container, carrying out polymerization reaction for 5 hours at the temperature of 30 ℃, taking out the fabric, washing the fabric for 4 times by using deionized water, placing the fabric in a vacuum drying oven, drying the fabric for 2 hours at the temperature of 55 ℃, taking out the fabric, and naturally cooling the fabric to room temperature to prepare the polythiophene conductive fabric.
And (3) performance testing:
the conductive performance of the polythiophene conductive fabrics in the above examples and comparative examples, i.e., the change of the static surface specific resistance with time, the change with air temperature and the change with air humidity, were tested, and the test results are shown in tables 1, 2 and 3.
TABLE 1
TABLE 2
TABLE 3
| Sample (I) | Static surface specific resistance range (omega) at a relative humidity of 40-80% |
| Example one | 553-582 |
| Example two | 561-576 |
| EXAMPLE III | 546-589 |
| Example four | 562-578 |
| EXAMPLE five | 550-567 |
| EXAMPLE six | 542-569 |
| Comparative example 1 | 879-969 |
| Comparative example No. two | 852-978 |
The invention has the beneficial effects that: the average change rate of the specific resistance of the polythiophene conductive fabric in the embodiment is 7.21-7.62% per day within 1-60 days;
compared with the polythiophene conductive fabric in the comparative example, the average change rate of the static surface specific resistance of the polythiophene conductive fabric in 1-60 days is 10.35-11.23%, the technical effect of obviously reducing the average change rate of the static surface specific resistance of the polythiophene conductive fabric in each day is achieved;
compared with the polythiophene conductive fabric in the comparative example, the polythiophene conductive fabric has the static surface specific resistance of 628-759 omega at the temperature of 20-60 ℃, not only the technical effect of remarkably reducing the static surface specific resistance value of the polythiophene conductive fabric is achieved, but also the technical effect of remarkably reducing the change range of the static surface specific resistance of the polythiophene conductive fabric along with the temperature is achieved;
compared with the polythiophene conductive fabric in the comparative example in which the static surface specific resistance is 852-978 Ω when the relative humidity is 40-80%, the polythiophene conductive fabric in the above embodiment has the technical effect of remarkably reducing the static surface specific resistance value of the polythiophene conductive fabric, and also has the technical effect of remarkably reducing the change range of the static surface specific resistance of the polythiophene conductive fabric along with the relative humidity, wherein the static surface specific resistance is 542-589 Ω when the relative humidity is 40-80%.
Claims (1)
1. The preparation method of the polythiophene conductive fabric for the flexible sensor is characterized by comprising the following steps of:
s1, adding 5-8 parts by mass of sodium hydroxide and 1-3 parts by mass of acetone into 24-30 parts by mass of deionized water, and uniformly stirring to prepare a pretreatment solution;
s2, adding 1-3 parts by mass of weft plain knitted fabric into the pretreatment solution in the step S1, soaking and boiling at the constant temperature of 40-60 ℃ for 1-2h, then taking out the fabric, repeatedly washing with deionized water until the pH value is neutral, naturally drying at room temperature, and preparing to obtain a pretreated fabric;
s3, adding 1.25-1.38 parts by mass of p-toluenesulfonic acid and 1-1.6 parts by mass of camphorsulfonic acid into 5-10 parts by mass of deionized water, and preparing to obtain a wetting solution A after uniform ultrasonic dispersion;
s4, immersing the pretreated fabric in the step S2 in the impregnating solution A in the step S3, soaking at the constant temperature of 35-40 ℃ for 1.5-2h, taking out the fabric, and naturally airing at room temperature to prepare a fabric A;
s5, adding 8-12 parts by mass of ammonium persulfate into 8-15 parts by mass of isopropanol, stirring and mixing uniformly, and preparing to obtain a soaking liquid B;
s6, immersing the fabric A in the step S4 in the impregnating solution B in the step S5, soaking for 1.5-2h at the constant temperature of 35-40 ℃, taking out the fabric, placing the fabric in a vacuum drying oven, and drying for 2-4h at the temperature of 45-65 ℃ to prepare a fabric B;
s7, hanging the fabric B in the step S6 in a closed container, placing 10 parts by mass of thiophene under the fabric B in the closed container, carrying out polymerization reaction for 3-6h under the vacuum condition at 25-40 ℃, taking out the fabric, washing the fabric for 3-5 times by using deionized water, placing the fabric in a vacuum drying oven, drying the fabric for 1-2h at 45-65 ℃, taking out the fabric, and naturally cooling the fabric to room temperature to prepare the polythiophene conductive fabric.
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