CN109746796A - A kind of dicing device and method for SiC wafer - Google Patents
A kind of dicing device and method for SiC wafer Download PDFInfo
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- CN109746796A CN109746796A CN201910023553.1A CN201910023553A CN109746796A CN 109746796 A CN109746796 A CN 109746796A CN 201910023553 A CN201910023553 A CN 201910023553A CN 109746796 A CN109746796 A CN 109746796A
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- sic wafer
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Abstract
The present invention provides a kind of dicing devices and method for SiC wafer, it include: wherein X to cantilever, Z-direction column, workbench, grinding wheel and spray gun for the dicing device of SiC wafer, X is equipped with into cantilever to ball-screw by the X and X is to cantilever lower section simultaneously equipped with scribing grinding wheel and plasma torch；Z-direction ball-screw is equipped in the Z-direction column to be connected with X to cantilever；Worktable rotary motor is equipped in the pedestal；The top of the workbench is equipped with Y-direction mobile device；The right side of the grinding wheel is equipped with plasma torch regulating device；It is characterized by: the dicing device and method of SiC wafer provided by the invention combine plasma modification with grinding wheel cutting-up, have the advantages that structure is simple and easy to operate, by the way that using the device and with the matched dicing method of the device accurate cutting-up can be carried out to SiC wafer, solve the problems, such as chipping in cutting-up superhard material of abrasive cut-off wheel in the prior art, consumptive material, badly broken.
Description
Technical field
The present invention relates to a kind of wafer slitting device and methods, and in particular to a kind of dicing device for SiC wafer and
Method.
Background technique
With the rapid development of photoelectric technology, the performance requirement of electronic device is higher and higher, to can be in high temperature, high frequency, big
The electronic device demand worked normally under the extreme conditions such as power, intense radiation is increasing.SiC most has hair as semiconductor field
One of the material of exhibition prospect, with wide gap belt, thermal conductivity is high, electronics saturation drift velocity is big, good chemical stability, but
It is since the materials chemistry stability is good, the Mohs' hardness of SiC crystal is higher, uses conventional methods the difficulty of processing SiC crystal
Spend that larger, efficiency is lower.
In certain fields, due to encapsulation or the requirement of product itself performance, need for semiconductor crystal wafer to be cut into one
One small chip.At present in semiconductor dice field, mainly there are grinding wheel scribing and laser scribing, grinding wheel dicing method is a kind of
More mature dicing technique mainly realizes the purpose of cutting by mechanical grinding principle, but biggish in cutting hardness
When material, grinding wheel scribing has that serious chipping, loss are serious；And laser scribing is not since technology is also very mature, though
So have the advantages that Dicing speed is fast, high-efficient during cutting-up, but since laser cutting-up temperature is higher, is easy to make material
At burn injury, and then influence the machining accuracy of semiconductor crystal wafer.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of dicing devices and method for SiC wafer, can be to crystalline substance
While circle realizes hi-precision cutting, the damage of the abrasion and material that make cutter is minimized.
To achieve the goals above, the technical solution used in the present invention is: a kind of dicing device for SiC wafer,
Including X to cantilever, Z-direction column, workbench, scribing grinding wheel, plasma torch and pedestal, the X into cantilever be equipped with X to
Ball-screw and X are to being equipped with scribing grinding wheel and plasma torch below cantilever；Z-direction ball wire is equipped in the Z-direction column
Thick stick is connected with X to cantilever；Worktable rotary motor is equipped in the pedestal；There is Y-direction mobile device above the workbench；
It is characterized by also including being equipped with plasma torch regulating device on the right side of scribing grinding wheel, for adjust plasma torch with
The distance of SiC wafer.
It is further characterized by
The motor that the X is worked to ball-screw by screw rod, sliding block and control lead screw；The motor is using high-precision
Stepper motor, and stepper motor is set to right end of the X to cantilever, the sliding block lower end be equipped with for connect scribing grinding wheel and it is equal from
The attachment device of daughter spray gun.
The Z-direction column is arranged using symmetrical mode, and is set in Z-direction column for adjusting X to cantilever and work
Make the ball-screw of spacing between platform；The Slipper of the ball-screw is connected with X to cantilever.
The scribing grinding wheel and plasma torch are connected with X to cantilever by attachment device, and scribing grinding wheel uses
The Ultra-thin Sand wheel of diamond material is sliced；The plasma by using inert gas (Ar gas) and vapor gaseous mixture
Body is generated as reaction gas, sprays the oxidative plasma body that can aoxidize SiC wafer, and plasma torch is set to tool
In the regulating device for having high precision ball screw structure.
The dicing method of the above-mentioned dicing device based on SiC wafer, includes the following steps:
1) SiC wafer to be processed fixed SiC wafer: is bonded in the upper surface of Y-direction mobile device with adhesive tape；
2) start dicing device, adjustment X is mobile by plasma torch and scribing grinding wheel to ball-screw and Z-direction ball-screw
To scribing start position；
3) to SiC Wafer Dicing: starting scribing grinding wheel and plasma torch, being sprayed by plasma torch has oxidisability
Plasma surface oxidation treatment is carried out to SiC wafer, while scribing grinding wheel carries out scribing to SiC wafer, in scribing processes
The cutting-up to SiC wafer different directions and different location is realized by manipulation worktable rotary motor and Y-direction mobile device.
In the above method, step 3) uses the method for being repeated twice cutting-up to the scribing of SiC wafer, wherein drawing in first time
After cutting, scribing grinding wheel and plasma torch are regulated and controled into the start position that motor recalls to first time cutting-up to ball-screw by X,
First time cutting-up process is repeated, and there is following chemical reaction:
e-+H2O→H+OH+e-,
SiC+4·OH+O2→SiO2+2H2O+CO2；
By above-mentioned chemical reaction, SiC crystal column surface material is changed into SiO2, and the SiO after transformation2Before material is compared to transformation
SiC material, have the characteristics that hardness is smaller, easy cutting.
Compared with prior art, a kind of dicing device and method for SiC wafer of the invention patent, devises scribing
The device that grinding wheel and plasma torch combine, by, to SiC wafer oxidation process, being drawn to solve using plasma
In piece grinding wheel scribing processes due to SiC wafer it is harder caused by chipping is serious and abrasion of grinding wheel is serious problem；The present invention
The method for being repeated twice cutting-up of middle use, also solves the SiO of generation2The problem of hindering SiC wafer further to aoxidize, thus
The complete processing for realizing material at SiC wafer cutting-up, further reduced the loss of cutter and workpiece.
The configuration of the present invention is simple, it is progress, high-efficient, it is lower to cutter and workpiece loss.
Below in conjunction with drawings and the specific embodiments, the invention will be described in further detail.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention.
Fig. 2 is SiC wafer first time cutting-up schematic diagram.
Fig. 3 is second of cutting-up schematic diagram of SiC wafer.
Fig. 4 is final scribing effect picture of the invention.
Wherein, 1 be plasma torch situation monitoring motor, 2 be etc. in vitro spray gun body situation monitoring screw rod, 3 be etc. from
Spray gun body situation monitoring sliding block, 4 be plasma torch, 5 be Y-direction mobile device regulation motor, 6 be Y-direction mobile device, 7 beLead screw bearing, 8 be SiC wafer workpiece, 9 be worktable rotary motor, 10 be pedestal, 11 be workbench, 12 be scribing grinding wheel, 13
For scribing emery wheel motor, 14 be scribing protective hood of grinding wheel, 15 be attachment device, 16 be Z-direction ball-screw, 17 be Z-direction rolling
Ballscrew sliding block, 18 be Z-direction ball-screw regulation motor, 19 be X to ball-screw sliding block, 20 be X to ball-screw, 21 be X
It is SiO to ball-screw regulation motor, 8.12Layer, 8.2 are SiC layer.
Specific embodiment
The invention will be further described below in conjunction with the accompanying drawings.Embodiment below is only used for clearly illustrating this hair
Bright technical solution, and not intended to limit the protection scope of the present invention.
The attached drawing of this specification is schematic diagram, aids in illustrating design of the invention, it is schematically indicated the shape of each section
And correlation.It note that in order to clearly show the structure and correlation of each component of the embodiment of the present invention, respectively
It is not drawn according to identical ratio between attached drawing.Identical reference marker is for indicating identical part.
With reference to Fig. 1, a kind of dicing device for SiC wafer of the present invention, including X is to cantilever, Z-direction column, work
Make platform 11, scribing grinding wheel 12, plasma torch 4 and pedestal 10, the X X is equipped with into cantilever to ball-screw 20 and X to
Scribing grinding wheel 12 and plasma torch 4 are equipped with below cantilever, and the upper surface of plasma torch 4 and workbench 11 keeps hanging down
Directly；Z-direction ball-screw 16 is equipped in the Z-direction column to be connected with X to cantilever；The center position of the pedestal 10 is equipped with
Worktable rotary motor 9, for controlling the rotation of workbench 11；The workbench 11 is located at the surface of pedestal 10, and
The top of workbench 11 is equipped with Y-direction mobile device 6；It further include the right side that plasma torch regulating device is located at scribing grinding wheel 12
Side, for adjusting at a distance from plasma torch 4 and workpiece SiC wafer 8.
In the present embodiment, plasma torch 4 is connected with scribing grinding wheel 12 by connecting cross beam to keep plasma
The lateral distance of spray gun 4 and scribing grinding wheel 12 is constant；Connecting cross beam by attachment device 15 realize and company from X to ball-screw 20
It connects.
The Z-direction column is arranged using symmetrical mode, and is set in Z-direction column for adjusting X to cantilever and work
Make the ball-screw of spacing between platform 11；The Slipper of the ball-screw is connected with X to cantilever.
The worktable rotary motor 9 can be stepper motor or AC servo motor, uses and hands in the present embodiment
Flow servo motor, and be fixedly mounted in pedestal 10, for controlling the rotation of workbench 11.
A kind of dicing method for SiC wafer of the present invention the following steps are included:
1) SiC wafer 8 to be processed fixed SiC wafer 8: is bonded in the upper table of Y-direction mobile device 6 with adhesive tape
Face；
2) start dicing device, starting X regulates and controls motor 21 to ball-screw and Z-direction ball-screw regulates and controls motor 18, adjusts X
To ball-screw 20 and Z-direction ball-screw 16, plasma torch 4 and scribing grinding wheel 12 are moved to scribing start position.
3) to 8 scribing of SiC wafer: starting scribing grinding wheel 12 and plasma torch 4, by plasma torch 4 to SiC
Wafer 8 carries out surface oxidation treatment, is then carrying out scribing to SiC wafer 8 by scribing grinding wheel 12, is passing through behaviour in scribing processes
Vertical worktable rotary motor 9 and Y-direction mobile device 6 realize the cutting-up to 8 different directions of SiC wafer.
It is worked in scribing processes by plasma torch situation monitoring motor 1, the in vitro spray gun body situation monitoring such as adjusting
Screw rod 2 controls the distance between plasma torch 4 and workpiece SiC wafer 8, when plasma torch 4 and workpiece SiC wafer 8
The distance between when increasing, plasma reduces the oxidation depth of SiC wafer 8, and oxidation depth is less than or equal to SiC wafer 8
Thickness.
In step 3) of the present invention further include: plasma by using inert gas (Ar gas) and vapor mixed gas
As reaction gas generate, by the way that the reaction gas is poured in plasma reactor so that Ar gas be stimulated after generate etc.
Gas ions, the high-velocity electrons e- in plasma react with vapor: e-+H2O→H+OH+e-, the hydroxyl radical free radical of generation
(- OH) injects surface of SiC, and oxidation reaction: SiC+4OH+O occurs2→SiO2+2H2O+CO2, so that superhard material SiC is by oxygen
It is melted into the lesser SiO of hardness2。
The specification of the present embodiment medium plain emery wheel, plasma torch and SiC wafer is selected and is used in accordance with the following methods:
1) with a thickness of 80 μm -200 μm of SiC wafer, select with a thickness of 100 μm, diameter for 150mm SiC wafer be to
Workpieces processing.
2) the ultra-thin scribing grinding wheel of thickness 0.2mm-0.3mm, outer diameter 80mm-400mm selects thickness 0.3mm, outer diameter
80mm, the boart boart crop rotation that granularity is 300 are sliced.
3) plasma torch of bore 0.2mm-0.3mm, selecting bore is the plasma torch of 0.3mm.
In order to solve the SiO of generation2SiC wafer the problem of further aoxidizing is hindered, to SiC wafer 8 in the present invention
Scribing is using the method for being repeated twice cutting-up.
Detailed cutting-up process is as follows:
1) first starting Z-direction ball-screw regulation motor 18 improves scribing grinding wheel 12 and plasma torch 4 to apart from work
The position for making 200 millimeters of platform restarts X to ball-screw and regulates and controls motor 21, to the left by scribing grinding wheel 12 and plasma torch 4
It is moved to left end.
2) it selects a disc of SiC wafer 8 as work surface, and is stained with specific sticky glue on another disc
Band；Again by SiC wafer 8 according to work surface upward, another disc sequence directed downwardly is pasted onto the upper table of Y-direction mobile device 6
Face.
3) scribing process parameter is set:
Scribing grinding wheel speed 13000rpm~14000rpm；
First time cutting-up depth is 0.05mm, and second of cutting-up depth is 0.05mm；
Scribing grinding wheel feed speed 0.5mm/s~0.8mm/s.
4) control Z-direction ball-screw regulation motor 18 and X regulate and control motor 21 to ball-screw, by scribing grinding wheel 12 and it is equal from
Daughter spray gun 4 is adjusted to scribing start position.
5) start plasma torch 4, Z-direction ball-screw regulation motor 18 and X and regulate and control motor 21, manipulation to ball-screw
Scribing machine starts first time scribing processing, and process is as shown in Fig. 2, the direction of horizontal arrow meaning in figure is pressed in cutting-up direction
It carries out, 8.1 pass through jet plasma to SiC wafer oxidation process later with a thickness of 0.05mm for plasma torch 4 in figure
SiO2Layer, 8.2 be untreated SiC layer in figure.
6) after completing to cutting-up process, plasma torch 4 and scribing emery wheel motor 13, control Z-direction rolling are closed
Ballscrew regulation motor 18 and X, which regulate and control motor 21 to ball-screw, makes scribing grinding wheel 12 and plasma torch 4 return to point
It sets.
7) manipulation Z-direction ball-screw regulation motor 18 makes 12 height of scribing grinding wheel drop to distance SiC wafer lower surface
At the height of 0.05mm, repeat the 5) step complete second of cutting-up process, process as shown in figure 3, cutting-up direction by figure
The direction of middle horizontal arrow meaning carries out, and 8.1 pass through jet plasma to SiC wafer oxidation for plasma torch 4 in figure
The SiO with a thickness of 0.1mm after processing2Layer, 8.2 be untreated SiC layer in figure.
8) the 6) step is repeated.
9) start Y-direction mobile device motor 5, control Y-direction mobile device 6 translates 5mm backward.
10) repeat the 4), 5), 6), 7), 8), 9) step, complete the lateral cutting-up to SiC wafer 8.
11) start worktable rotary motor 9, control workbench 11 is rotated by 90 ° counterclockwise.
12) repeat the 4), 5), 6), 7), 8), 9), 10) step, complete longitudinal cutting-up to SiC wafer 8.
13) cutting-up is completed, and control Z-direction ball-screw regulation motor 18 and X are to ball-screw regulation motor 21, by scribing sand
Wheel 12 and plasma torch 4 are adjusted to scribing start position, close SiC Wafer Dicing device, are finally obtained as shown in Figure 4
Wafer cutting-up effect.
The dicing device structure used in the present invention is simple, and operating method is simple, may be implemented to superhard material SiC wafer
It realizes hi-precision cutting, solves the problems, such as that traditional grinding wheel scribing serious chipping and loss when cutting superhard material are serious, together
When also avoid defect in laser scribing process to workpiece burn.
The above is only preferred embodiments of the invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvement and deformations can also be made, these improvement and deformations
Also it should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of dicing device for SiC wafer, the SiC Wafer Dicing device includes X to cantilever, Z-direction column, work
Platform, grinding wheel, spray gun and pedestal, the X is equipped with X into cantilever to ball-screw and X is to being equipped with grinding wheel and spray gun below cantilever；
Z-direction ball-screw is equipped in the Z-direction column to be connected with X to cantilever；Worktable rotary motor is equipped in the pedestal；Institute
Y-direction mobile device is equipped with above the workbench stated；It is characterized by also including be equipped with spray gun regulating device on the right side of scribing grinding wheel.
2. a kind of dicing device for SiC wafer according to claim 1, the X is equipped with to cantilever right end and is used for
The stepper motor that control X is moved to ball-screw.
3. a kind of dicing device for SiC wafer according to claim 1, the Z-direction column is using bilateral symmetry
Mode arrange.
4. a kind of dicing device for SiC wafer according to claim 1, the grinding wheel is using diamond material
Scribing grinding wheel, scribing grinding wheel thickness range are 0.2mm-0.3mm.
5. a kind of dicing device for SiC wafer according to claim 1, the spray gun is a kind of plasma spray
Rifle.
6. a kind of dicing device for SiC wafer according to claim 1, the spray gun regulating device is using high-precision
Ball screw arrangement is spent, for adjusting plasma gun at a distance from workpiece.
7. a kind of dicing method for SiC wafer, the method is real using dicing device described in any one of claims 1-6
It is existing, method includes the following steps:
1) SiC wafer to be processed fixed SiC wafer: is bonded in the upper surface of Y-direction mobile device with adhesive tape；
2) start dicing device, adjustment X is mobile by plasma torch and scribing grinding wheel to ball-screw and Z-direction ball-screw
To scribing start position；
3) to SiC Wafer Dicing: starting scribing grinding wheel and plasma torch, sprayed by plasma torch has oxygen first
The plasma for the property changed carries out surface plasma modifying processing to SiC wafer, is secondly carried out using scribing grinding wheel to SiC wafer
Scribing can realize the cutting-up to SiC wafer different directions, while passing through plasma in scribing processes by rotary table
Spray gun body regulating device controls the distance between plasma torch and workpiece, to reach control SiC crystal column surface plasma
The purpose of modified layer depth.
8. a kind of dicing method for SiC wafer according to claim 7, it is characterised in that: in the step 3)
In, plasma is generated by using the mixed gas of inert gas (Ar gas) and vapor as reaction gas.
9. a kind of dicing method for SiC wafer according to claim 8, it is characterised in that: in the step 3)
In, there are following chemical reactions:
e-+H2O→H+OH+e-,
SiC+4·OH+O2→SiO2+2H2O+CO2；
By above-mentioned chemical reaction, SiC crystal column surface material is changed into SiO2, and the SiO after transformation2Before material is compared to transformation
SiC material, have the characteristics that hardness is smaller, easy cutting.
10. a kind of dicing method for SiC wafer according to claim 7, it is characterised in that: in the step 3)
In, to the scribing of SiC wafer using the method for being repeated twice cutting-up, wherein after first time cutting-up, by scribing grinding wheel and it is equal from
Daughter spray gun recalls to the start position of first time cutting-up, repeats first time cutting-up process.
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| CN201910023553.1A CN109746796A (en) | 2019-01-10 | 2019-01-10 | A kind of dicing device and method for SiC wafer |
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| CN201910023553.1A CN109746796A (en) | 2019-01-10 | 2019-01-10 | A kind of dicing device and method for SiC wafer |
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Cited By (5)
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| CN110682007A (en) * | 2019-09-11 | 2020-01-14 | 芜湖德锐电子技术有限公司 | Cutting device for chip processing |
| CN111081819A (en) * | 2019-12-31 | 2020-04-28 | 通威太阳能（合肥）有限公司 | Damage-preventing cutting method and device for solar cell |
| CN113635144A (en) * | 2021-08-17 | 2021-11-12 | 上海交通大学 | Dry type modified grinding method and system for hard and brittle material |
| CN114352704A (en) * | 2022-01-14 | 2022-04-15 | 深圳特斯特半导体设备有限公司 | Blade main shaft structure of dicing saw |
| CN115139181A (en) * | 2022-07-05 | 2022-10-04 | 先导薄膜材料（广东）有限公司 | Ceramic target processing method and processing equipment |
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| CN113635144A (en) * | 2021-08-17 | 2021-11-12 | 上海交通大学 | Dry type modified grinding method and system for hard and brittle material |
| CN114352704A (en) * | 2022-01-14 | 2022-04-15 | 深圳特斯特半导体设备有限公司 | Blade main shaft structure of dicing saw |
| CN114352704B (en) * | 2022-01-14 | 2024-03-15 | 深圳特斯特半导体设备有限公司 | Blade spindle structure of dicing saw |
| CN115139181A (en) * | 2022-07-05 | 2022-10-04 | 先导薄膜材料（广东）有限公司 | Ceramic target processing method and processing equipment |
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